CN101838841A - Single crystal furnace device - Google Patents
Single crystal furnace device Download PDFInfo
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- CN101838841A CN101838841A CN201010112330A CN201010112330A CN101838841A CN 101838841 A CN101838841 A CN 101838841A CN 201010112330 A CN201010112330 A CN 201010112330A CN 201010112330 A CN201010112330 A CN 201010112330A CN 101838841 A CN101838841 A CN 101838841A
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Abstract
The invention relates to a silicon single crystal preparation device, in particular to a single crystal furnace device which comprises a heat shield, an adiabatic material and a reflecting board. The heat shield is arranged above a quartz crucible and encircled around a crystal rod, the lower-part diameter of the heat shield is smaller than the upper-part diameter, the adiabatic material at least aims to reduce power consumption, and the reflecting board aims to improve the cooling effect of the crystal rod and increase the crystal-pulling speed. Radiation heat on the surface of the crystal rod is reflected upwards to improve the crystal rod cooling effect so that the crystal-pulling speed is improved, the crystal-pulling time is shortened, the production efficiency is improved, i.e. the invention has convenient implementation and simple structure by directly arranging the reflecting board at the inner side of a traditional heat shield structure without reinstalling a connecting part. Moreover, the exterior of the adiabatic material is coated with a substance (such as a heat shield cover) to prevent waste from falling in the quartz crucible.
Description
Technical field
The present invention relates to a kind of apparatus for manufacturing silicone single crystals, particularly relate to a kind of single crystal furnace device.
Background technology
Silicon single crystal is generally used the CZ manufactured.The CZ method refers to quartz crucible is set in single crystal growing furnace, and the silicon material packed in the quartz crucible, dependence is installed in quartz crucible well heater on every side and makes the fusing of silicon material again, the back enters liquation to the seed crystal that is installed on the seed chuck, and the mutual reverse by seed chuck and quartz crucible and then produce specified diameter and the single crystal rod of length.At this moment, in order to cover the heat of liquation, the heat shielding around single crystal rod is set above quartz crucible.
That is to say, see also Fig. 1, existing single crystal furnace device generally includes heat shielding.This heat shielding 13 can be made up of heat shielding cover 21 and heat insulation material 22.Heat insulation material 22 is around the single crystal rod in the crystal pulling 11, and the periphery of heat insulation material 22 can all be covered by heat shielding cover 21, also can be that the periphery and the interior week of heat insulation material 22 all covered by heat shielding cover 21.Heat shielding 13 is positioned at the top of quartz crucible 12.
In order to shorten the crystal pulling time, and then enhance productivity, at present effective means is to improve pulling rate.And if will improve pulling rate, the problem that then needs most solution is exactly the rate of cooling of single crystal rod.Disclosed spy opens in the Japanese Patent of 2001-270797 in October 2 calendar year 2001, disclosing a kind of denomination of invention by the application of Wacker-NSEC Co., Ltd. is the patent of " apparatus for manufacturing silicone single crystals ", its device is provided with reflect radiation heat body and radiant heat baffle, the reflect radiation heat body is around the single crystal rod in the crystal pulling, top is ring-type, the downward diameter in bottom is gradually little, and the radiant heat baffle is looped around the external side of reflect radiation heat.This radiant heat baffle has 2 place's connection sections to be connected with the reflect radiation heat body, is not in contact with one another beyond the connection section.
Though this device can promote the rate of cooling of single crystal rod to a certain extent, still has following problem:
At first, in the above-mentioned patent application, be by in the top of radiant heat baffle portion one support and connection portion being set, making the reflect radiation heat body can be positioned at the inboard of radiant heat baffle by this support and connection portion, and then can realize purpose around the single crystal rod in the crystal pulling.This structure more complicated, and need reach " the reducing diameter part foot of this reflect radiation heat body; it is treble 1/10th to be at least reducing diameter part, and with respect to the horizontal plane will have 40 spend " mentioned in the application documents to inclination of 50 degrees, implement and have certain degree of difficulty.
Then, the material of radiant heat baffle is generally graphite, when this radiant heat baffle has 2 place's connection sections to be connected with the reflect radiation heat body, not full the applying between radiant heat baffle and the reflect radiation heat body, therefore, in the crystal pulling process, the radiant heat baffle is fallen into tiny granular graphite in the liquation easily, and then influences the quality of the single crystal rod of producing.
Once more, disclosed reflect radiation heat body mainly refers to apply the reflecting layer on the surface of graphite or CC matrix material in this patent document, and the reflecting layer is exactly that what say in the application documents is material below 0.5 by radiant ratio.Graphite or CC matrix material directly apply the reflecting layer, if the reflecting layer that applies is even, and the processing requirement height that needs, if the reflecting layer that applies is inhomogeneous, then the effect of reflecting heat just might be given a discount.
Summary of the invention
The object of the present invention is to provide a kind of single crystal furnace device, reaching the cooling efficiency that improves crystal bar, and then improve the technical purpose of pulling rate.
In order to achieve the above object, the invention provides a kind of single crystal furnace device, comprise heat shielding and quartz crucible, described heat shielding is made up of heat insulation material, heat shielding cover, reflector, and heat insulation material is arranged on the top of quartz crucible, and its underpart diameter is less than upper diameter, the inboard of heat insulation material and the outside are covered by internal heat shield cover and outer heat shielding cover respectively, its internal heat shield cover inboard is placed with reflector, and reflector is around the crystal bar in the crystal pulling, reserving space not between reflector and the internal heat shield cover.
Generally, internal heat shield cover and outer heat shielding cover are the heat shielding cover that is made into integration, and are coated by the heat shielding cover around the heat insulation material.
Even the material of reflector can adopt and be exposed to molybdenum or the tungsten that distortion is still very little in the high temperature, radiant ratio is very low for a long time.
And in order to improve the efficient of reflecting heat, reflector can adopt the reflector of making mirror process.
In order to increase heat insulation effect, the top heat insulation material can be set on heat shielding top.
And the material of above-mentioned heat shielding cover can be graphite or C/C matrix material.
In addition, reflector presents top big, following little round table-like.
In this example, reflector and heat shielding cover can be high together.
In this example, the bottom surface of reflector flushes with the bottom surface of heat shielding cover, and the upper bottom surface of reflector is lower than the upper bottom surface of internal heat shield cover.That is to say that the height of reflector is less than the height of internal heat shield cover.
Compared with prior art, the present invention has following advantage:
At first, the present invention is about being arranged on quartz crucible top around crystal bar and the lower diameter heat shielding less than upper diameter, used at least and consumed electric power as the heat insulation material of purpose with to improve the reflector of crystal bar cooling performance raising pulling rate as purpose to reduce, by upwards reflection of radiant heat with the crystal bar surface, reach and improve crystal bar refrigerative effect, can realize the raising of pulling rate thus, and then reach the shortening crystal pulling time, thus the effect of enhancing productivity.
Then, the present invention adopts and directly is placed with reflector in the inboard of existing heat shielding structure, does not need to reset connection section, and it is convenient to realize, and simple in structure.
Once more, the outside of heat insulation material of the present invention all is coated with material (as the heat shielding cover), prevents that rubbish from falling into quartz crucible.
Secondly, reflector of the present invention can adopt the reflector of making mirror process, further promotes the radiant heat on the crystal bar surface efficient of reflection upwards.
Secondly, be out of shape the molybdenum still very little, that radiant ratio is very low or tungsten in the high temperature as reflector even the present invention directly adopts to be exposed to for a long time, rather than existing graphite is provided with coating and is used as the reflecting layer, the stability of reflector is higher.
At last, the bottom surface of reflector flushes with the bottom surface of heat shielding cover, and the upper bottom surface of reflector is lower than the upper bottom surface of internal heat shield cover.That is to say that the height of reflector is less than the height of internal heat shield cover.The cost of considering reflector is very high, this structure design, and not only can reduce increases the problem that cost that reflector brings rolls up, and equally also the upwards reflection of radiant heat on crystal bar surface can be reached and improves crystal bar refrigerative effect.
Description of drawings
Fig. 1 is an example structure synoptic diagram of existing single crystal furnace device;
Fig. 2 is an example schematic of heat shielding in the single crystal furnace device of the present invention;
Fig. 3 is second example schematic of heat shielding in the single crystal furnace device of the present invention.
Embodiment
Below in conjunction with accompanying drawing, further specify the present invention.
Embodiment 1
See also Fig. 2, it is the example structure synoptic diagram of heat shielding in a kind of single crystal furnace device.Heat shielding is made up of heat insulation material 32, heat shielding cover, reflector 34, heat insulation material 32 is arranged on the top of quartz crucible, its underpart diameter is less than upper diameter, the inboard of heat insulation material 32 and the outside are covered by internal heat shield cover 33 and outer heat shielding cover 31 respectively, its internal heat shield cover 33 inboards are placed with reflector 34, reflector 34 is around the crystal bar in the crystal pulling, reserving space not between reflector 34 and the internal heat shield cover 33.
And generally, internal heat shield cover 33 and the heat shielding cover of outer heat shielding cover 31 for being made into integration are coated by the heat shielding cover around the heat insulation material 32.
Equally, even can adopting, the material of reflector 34 is exposed to molybdenum or the tungsten that distortion is still very little in the high temperature, radiant ratio is very low for a long time.And, with reflector 34 for making mirror process.Also have, heat shielding top can be provided with top heat insulation material 35.
In addition, the material of heat shielding cover also can be graphite or C/C matrix material.
Also need to prove the similar round platform of the shape of whole heat shielding.And reflector 34 also is to present following little top big truncated conical shape.
In this example, the bottom surface of the bottom surface of reflector 34 and heat shielding cover is substantially flush, and the upper bottom surface of its upper bottom surface and heat shielding cover is also substantially flush.
In this example, reflector 34 can present the truncated conical shape that the bottom is little, top is big.That is to say that whole heat shielding is big round table-like in little top, bottom, reflector 34 can directly be placed on the inboard of heat insulation material 32, need be by extra mechanical means or tackiness agent etc., easy to use and install also convenient.
Embodiment 2
See also Fig. 3, compare with embodiment 1, the bottom surface of the bottom surface of reflector 41 and heat shielding cover is substantially flush, and its upper bottom surface is lower than the upper bottom surface of heat shielding cover.
Consider the very expensive according to the set price of reflector 41, the size of dwindling reflector 41 also can reach similar effects, promptly by upwards reflection of radiant heat with the crystal bar surface, reach and improve crystal bar refrigerative effect, can realize the raising of pulling rate thus, and then reach the shortening crystal pulling time, thereby the effect of enhancing productivity.
The present invention has obtained following result by experiment.
95kg feeds, when drawing the crystal bar of 6.5 inches of diameters, uses heat shielding of the present invention, average pull rate was increased to 1.4mm/min by former 0.95mm/min has realized that high speed crystal pulling, crystal pulling time shorten 8.7 hours.Power consumption during crystal pulling has reduced by 35%.
Claims (10)
1. single crystal furnace device, comprise heat shielding and quartz crucible, it is characterized in that, described heat shielding is made up of heat insulation material, heat shielding cover, reflector, and heat insulation material is arranged on the top of quartz crucible, and its underpart diameter is less than upper diameter, the inboard of heat insulation material and the outside are covered by internal heat shield cover and outer heat shielding cover respectively, its internal heat shield cover inboard is placed with reflector, and reflector is around the crystal bar in the crystal pulling, reserving space not between reflector and the internal heat shield cover.
2. single crystal furnace device as claimed in claim 1 is characterized in that, internal heat shield cover and outer heat shielding cover are the heat shielding cover that is made into integration, and is coated by the heat shielding cover around the heat insulation material.
3. single crystal furnace device as claimed in claim 1 or 2 is characterized in that, is exposed to molybdenum or the tungsten that distortion is still very little in the high temperature, radiant ratio is very low for a long time even the material of reflector adopts.
4. single crystal furnace device as claimed in claim 1 or 2 is characterized in that, reflector is a reflector of making mirror process.
5. single crystal furnace device as claimed in claim 1 or 2 is characterized in that heat shielding top is provided with the top heat insulation material.
6. single crystal furnace device as claimed in claim 1 or 2 is characterized in that, the material of heat shielding cover is graphite or C/C matrix material.
7. single crystal furnace device as claimed in claim 1 or 2 is characterized in that, reflector presents top big, following little round table-like.
8. single crystal furnace device as claimed in claim 2 is characterized in that, reflector and heat shielding cover are high together.
9. single crystal furnace device as claimed in claim 2 is characterized in that, the bottom surface of reflector flushes with the bottom surface of heat shielding cover, and the upper bottom surface of reflector is lower than the upper bottom surface of internal heat shield cover.
10. single crystal furnace device as claimed in claim 9 is characterized in that the height of reflector is less than the height of internal heat shield cover.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010112330A CN101838841A (en) | 2010-02-23 | 2010-02-23 | Single crystal furnace device |
| PCT/CN2010/076133 WO2011103740A1 (en) | 2010-02-23 | 2010-08-19 | Single crystal pulling furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010112330A CN101838841A (en) | 2010-02-23 | 2010-02-23 | Single crystal furnace device |
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| CN101838841A true CN101838841A (en) | 2010-09-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010112330A Pending CN101838841A (en) | 2010-02-23 | 2010-02-23 | Single crystal furnace device |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102352530A (en) * | 2011-11-09 | 2012-02-15 | 内蒙古中环光伏材料有限公司 | Heat shield device for CZ-Si single crystal furnace |
| CN102732949A (en) * | 2012-06-21 | 2012-10-17 | 芜湖昊阳光能股份有限公司 | Draft tube structure of graphite thermal field |
| CN103451721A (en) * | 2013-08-19 | 2013-12-18 | 浙江晶盛机电股份有限公司 | Single crystal growth furnace with water-cooling heat shield |
| CN106521617A (en) * | 2016-12-13 | 2017-03-22 | 宝鸡市宏佳有色金属加工有限公司 | Molybdenum guide cylinder and single crystal furnace |
| CN106521616A (en) * | 2016-12-13 | 2017-03-22 | 宝鸡市宏佳有色金属加工有限公司 | Single crystal furnace quartz guide cylinder |
| CN108239785A (en) * | 2016-12-23 | 2018-07-03 | 有研半导体材料有限公司 | To the processing method of bridging during a kind of vertical pulling method production monocrystalline silicon |
| CN108609864A (en) * | 2016-12-12 | 2018-10-02 | 银川隆基硅材料有限公司 | A kind of plated film heat insulation reflecting quartz heat shielding and preparation method thereof |
| CN108950678A (en) * | 2017-05-19 | 2018-12-07 | 上海新昇半导体科技有限公司 | A kind of heat shielding component and single crystal pulling furnace thermal field structure with water-cooled jacket |
| TWI722449B (en) * | 2018-11-12 | 2021-03-21 | 大陸商上海新昇半導體科技有限公司 | A reflective screen of a monocrystal growth furnace and the monocrystal growth furnace |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001270797A (en) * | 2000-03-28 | 2001-10-02 | Wacker Nsce Corp | Apparatus for producing silicon single crystal |
| CN1417386A (en) * | 2001-11-01 | 2003-05-14 | 北京有色金属研究总院 | Heat shielding method and heat shield for vertically pulling crystal furnace |
| CN1609286A (en) * | 2004-09-20 | 2005-04-27 | 江苏顺大半导体发展有限公司 | Solar energy level silicon single crystal producing process |
-
2010
- 2010-02-23 CN CN201010112330A patent/CN101838841A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001270797A (en) * | 2000-03-28 | 2001-10-02 | Wacker Nsce Corp | Apparatus for producing silicon single crystal |
| CN1417386A (en) * | 2001-11-01 | 2003-05-14 | 北京有色金属研究总院 | Heat shielding method and heat shield for vertically pulling crystal furnace |
| CN1609286A (en) * | 2004-09-20 | 2005-04-27 | 江苏顺大半导体发展有限公司 | Solar energy level silicon single crystal producing process |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102352530A (en) * | 2011-11-09 | 2012-02-15 | 内蒙古中环光伏材料有限公司 | Heat shield device for CZ-Si single crystal furnace |
| CN102352530B (en) * | 2011-11-09 | 2014-04-16 | 内蒙古中环光伏材料有限公司 | Heat shield device for CZ-Si single crystal furnace |
| CN102732949A (en) * | 2012-06-21 | 2012-10-17 | 芜湖昊阳光能股份有限公司 | Draft tube structure of graphite thermal field |
| CN103451721A (en) * | 2013-08-19 | 2013-12-18 | 浙江晶盛机电股份有限公司 | Single crystal growth furnace with water-cooling heat shield |
| CN108609864A (en) * | 2016-12-12 | 2018-10-02 | 银川隆基硅材料有限公司 | A kind of plated film heat insulation reflecting quartz heat shielding and preparation method thereof |
| CN108609864B (en) * | 2016-12-12 | 2022-01-14 | 银川隆基硅材料有限公司 | Film-coated heat-insulation reflective quartz heat shield and preparation method thereof |
| CN106521617A (en) * | 2016-12-13 | 2017-03-22 | 宝鸡市宏佳有色金属加工有限公司 | Molybdenum guide cylinder and single crystal furnace |
| CN106521616A (en) * | 2016-12-13 | 2017-03-22 | 宝鸡市宏佳有色金属加工有限公司 | Single crystal furnace quartz guide cylinder |
| CN108239785A (en) * | 2016-12-23 | 2018-07-03 | 有研半导体材料有限公司 | To the processing method of bridging during a kind of vertical pulling method production monocrystalline silicon |
| CN108950678A (en) * | 2017-05-19 | 2018-12-07 | 上海新昇半导体科技有限公司 | A kind of heat shielding component and single crystal pulling furnace thermal field structure with water-cooled jacket |
| TWI722449B (en) * | 2018-11-12 | 2021-03-21 | 大陸商上海新昇半導體科技有限公司 | A reflective screen of a monocrystal growth furnace and the monocrystal growth furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI SHENHE THERMO-MAGENETIC ELECTRONIC CO., L |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20101124 Address after: 200444 No. 188, Lian Lian Road, Baoshan City Industrial Park, Shanghai, China Applicant after: Shanghai Thermo-magenetic Electronic Co., Ltd. Co-applicant after: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. Address before: 200444 No. 188, Lian Lian Road, Baoshan City Industrial Park, Shanghai, China Applicant before: Shanghai Thermo-magenetic Electronic Co., Ltd. |
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| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20100922 |