CN208562590U - A kind of cooling device and single crystal growing furnace applied to single crystal growing furnace - Google Patents
A kind of cooling device and single crystal growing furnace applied to single crystal growing furnace Download PDFInfo
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- CN208562590U CN208562590U CN201821169882.4U CN201821169882U CN208562590U CN 208562590 U CN208562590 U CN 208562590U CN 201821169882 U CN201821169882 U CN 201821169882U CN 208562590 U CN208562590 U CN 208562590U
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Abstract
The utility model provides a kind of cooling device and single crystal growing furnace applied to single crystal growing furnace, for drawing high quality single crystal silicon rod, it is characterized in that, the cooling device includes: water-cooled jacket, the water-cooled jacket includes the annular cooling water circulation line being arranged in the water-cooled jacket；Thermally conductive attachment, it is fixedly connected on the bottom end of the water-cooled jacket and downward extension portion length, it is cooled down for absorbing the heat of silicon single crystal rod and conducting to the water-cooled jacket, wherein, the thermally conductive attachment is provided centrally with cavity, to allow the silicon single crystal rod to pass through, rationally controls ullage Temperature Distribution and adjust the cooling rate of silicon single crystal rod to control silicon single crystal rod internal flaw.
Description
Technical field
The utility model relates to crystal growth equipment fields, in particular to a kind of cooling device applied to single crystal growing furnace
And single crystal growing furnace.
Background technique
Artificial lens plays increasingly important role, especially monocrystalline silicon in science and technology and field of industrial production and makees
For a kind of semiconductor material, applied in integrated circuit and other electronic components more and more extensive.Existing most monocrystalline silicon
It is all grown in single crystal growing furnace using vertical pulling method, monocrystalline growth with czochralski silicon needs material, seeding, shouldering, isometrical, ending and cooling
Etc. technical process, requirement with market to silicon wafer economy be continuously improved, the size for causing vertical pulling method to prepare monocrystalline silicon is continuous
Increase, so that large size single crystal silicon growth has become mainstream.But with the continuous increase of crystalline size, the drawing of crystal-pulling process
Speed but constantly reduces.In the lesser situation of pulling rate, lead to wafer production low efficiency, deficiency in economic performance.
Simultaneously in the semiconductor industry, as high-end processing procedure continues to develop, integrated circuit (IC) design rule is constantly reduced,
Characteristic line breadth gradually develops to 10nm or less.The higher requirement of powder injection molding aspect is proposed to semi-conductor silicon chip manufacture, is needed
Crystal defect control is in smaller scale to meet requirements at the higher level.In order to reach the quality requirement of this high standard silicon wafer, Jin Jinyi
V/G (V monocrystalline pulling rate, the axial-temperature gradient of G solid liquid interface) ratio by controlling solid liquid interface can no longer meet requirement, need
Want the thermal history of strict control crystal.
Therefore, two aspects are controlled from economy and crystal quality, it is necessary to propose a kind of new cooling device and list
Brilliant furnace, to solve the above technical problems.
Utility model content
A series of concept of reduced forms is introduced in utility model content part, this will be in specific embodiment part
Middle further description.The utility model content part of the utility model is not meant to attempt to limit claimed
Technical solution key feature and essential features, do not mean that the guarantor for attempting to determine technical solution claimed more
Protect range.
In view of the deficiencies of the prior art, on the one hand the utility model provides a kind of cooling device applied to single crystal growing furnace,
For drawing high quality single crystal silicon rod, the cooling device includes:
Water-cooled jacket, the water-cooled jacket include the annular cooling water circulation line being arranged in the water-cooled jacket；
Thermally conductive attachment is fixedly connected on the bottom end of the water-cooled jacket and downward extension portion length, for absorbing monocrystalline silicon
The heat and conduction to the water-cooled jacket of stick are cooled down, wherein the thermally conductive attachment is provided centrally with cavity, to allow
It states silicon single crystal rod to pass through, rationally controls ullage Temperature Distribution and adjust the cooling rate of silicon single crystal rod to control in silicon single crystal rod
Portion's defect.
Illustratively, the thermally conductive attachment includes at least one heat-conducting cylinder for being connected to the water-cooled jacket bottom end.
Illustratively, the thermally conductive attachment includes at least two heat-conducting cylinders with different thermal conductivity.
Illustratively, multiple heat-conducting cylinder ecto-entads with different inner diameters, which are arranged, links together, alternatively, multiple
The cylinder internal cavity of the heat-conducting cylinder is opposite and stacks gradually link together from top to bottom.
Illustratively, the thermally conductive attachment includes the first heat-conducting cylinder and the second heat-conducting cylinder being set-located, wherein described
First heat-conducting cylinder member base end also extends over the bottom surface of second heat-conducting cylinder.
Illustratively, the inner wall of part first heat-conducting cylinder is fixedly connected on the lateral wall of the water-cooled jacket, described
The top end face of second heat-conducting cylinder is connected on the bottom face of the water-cooled jacket.
Illustratively, the thermally conductive attachment includes the first heat-conducting cylinder and the second heat-conducting cylinder, wherein first heat-conducting cylinder
Top end face connects the bottom face of the water-cooled jacket, and the top end face of second heat-conducting cylinder connects the bottom end of first heat-conducting cylinder
Face.
Illustratively, the water-cooled jacket includes tube body, and the top end face of first heat-conducting cylinder connects the bottom end of the tube body
Face, wherein the thickness of the barrel of first heat-conducting cylinder is gradually decrease to the tube wall less than or equal to the tube body from bottom to top
Thickness.
Illustratively, the thickness phase of the thickness of the barrel of second heat-conducting cylinder and the barrel of first heat-conducting cylinder bottom end
Deng.
Illustratively, the thermal conductivity of first heat-conducting cylinder is greater than the thermal conductivity of second heat-conducting cylinder, alternatively, described the
The thermal conductivity of two heat-conducting cylinders is greater than the thermal conductivity of first heat-conducting cylinder.
Illustratively, the thermally conductive attachment head internal diameter is identical as water-cooled jacket bottom end outer diameter.
Illustratively, the shape of the heat-conducting cylinder is cylinder-shaped, conical, truncated cone-shaped or their combination.
Illustratively, the material of the thermally conductive attachment includes at least one of thermal insulation material, graphite, quartz, tungsten and molybdenum.
Illustratively, the inside diameter ranges of the thermally conductive attachment are in 360mm between 600mm.
Illustratively, the wall thickness range of the heat-conducting cylinder is in 10mm between 250mm.
Illustratively, the water-cooled jacket further include:
Tube body, the annular cooling water circulation line are arranged in the tube wall of the tube body, wherein cooling water is in the ring
Circulation in the cooling water circulation pipe of shape；
The top of the tube body is arranged in flange, for the water-cooled jacket to be installed in single crystal growing furnace；
Heat-sink shell is covered on the outer side wall surface of the tube body.
Illustratively, the material of the tube body includes stainless steel, and the annular cooling water circulation line includes copper pipe.
On the other hand the utility model provides a kind of single crystal growing furnace, for drawing zero defect silicon single crystal rod, the single crystal growing furnace packet
It includes:
It is internally provided with the furnace body of furnace chamber；
Crucible is arranged in the furnace chamber；
Cooling device above-mentioned is arranged in the furnace chamber above the crucible, wherein the bottom face position of the thermally conductive attachment
On the highest liquid level of the melt liquid in the crucible in the single crystal growing furnace.
Illustratively, the single crystal growing furnace further include:
Bell, positioned at the top of the furnace body；
Concubine, positioned at the top of the bell, wherein the top of the water-cooled jacket is fixed at the bell and described
Between concubine.
Illustratively, the top of the water-cooled jacket is provided with flange, and the flange is fixed at the bell and described
Between concubine.
Illustratively, the single crystal growing furnace further include:
Insulating layer is arranged on the inner wall of the furnace body,
Guide shell, the top of the guide shell are fixedly connected on the top end face of the insulating layer, the bottom of the guide shell
End is located at the top of the crucible, wherein there is interval between the thermally conductive attachment and the guide shell.
The cooling device of the utility model includes water-cooled jacket and the thermally conductive attachment for being connected to water-cooled jacket bottom end, using thermally conductive attached
The thermal conductivity of part, absorbs the heat of silicon single crystal rod and conduction to the water-cooled jacket is cooled down, wherein in the thermally conductive attachment
The heart is provided with cavity, to allow the silicon single crystal rod to pass through, rationally controls ullage Temperature Distribution and adjusts the cold of silicon single crystal rod
But rate is to control silicon single crystal rod internal flaw, also, thermally conductive attachment absorbs the heat of silicon single crystal rod and conducts to the water cooling
Set is cooled down, and is cooled down the silicon single crystal rod grown in time, is provided power for crystal growth, to improve pulling rate, increases life
Efficiency is produced, cost has been saved.
Detailed description of the invention
The following drawings of the utility model is used to understand the utility model in this as a part of the utility model.Attached drawing
In show the embodiments of the present invention and its description, for explaining the principles of the present invention.
In attached drawing:
Fig. 1 shows the partial cutaway schematic of the single crystal growing furnace of one embodiment of the utility model；
Fig. 2A shows the diagrammatic cross-section of the cooling device of one embodiment of the utility model；
Fig. 2 B shows the diagrammatic cross-section of the cooling device of the utility model another embodiment.
Specific embodiment
In the following description, a large amount of concrete details are given more thoroughly to manage in order to provide to the utility model
Solution.It is, however, obvious to a person skilled in the art that the utility model may not need it is one or more of these thin
It saves and is carried out.In other examples, in order to avoid obscuring with the utility model, for more well known in the art
Technical characteristic is not described.
It should be understood that the utility model can be implemented in different forms, and should not be construed as being limited to mention here
Embodiment out.Disclosure will be made thoroughly and complete and the scope of the utility model is complete on the contrary, providing these embodiments
Ground passes to those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may be exaggerated.
Same reference numerals indicate identical element from beginning to end.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, it is not departing under the utility model introduction, first element discussed below,
Component, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and the limitation not as the utility model.?
This is in use, " one " of singular, "one" and " described/should " be also intended to include plural form, unless context understands finger
Other mode out.Be also to be understood that term " composition " and/or " comprising ", when being used in this specification, determine the feature,
The presence of integer, step, operations, elements, and/or components, but it is not excluded for one or more other features, integer, step, behaviour
Make, the presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item
And all combinations.
In order to thoroughly understand the utility model, detailed structure will be proposed in following description, it is practical to illustrate
The technical solution of novel proposition.The preferred embodiment of the utility model is described in detail as follows, however other than these detailed descriptions,
The utility model can also have other embodiments.
Requirement with market to silicon wafer economy is continuously improved, and the size for causing vertical pulling method method to prepare monocrystalline silicon constantly increases
Greatly.But with the continuous increase of crystalline size, the pulling rate of crystal-pulling process but constantly reduces.In the lesser situation of pulling rate,
Lead to wafer production low efficiency, deficiency in economic performance.Currently, water-cooled jacket is introduced in order to improve the pulling rate that vertical pulling method prepares monocrystalline silicon,
The time for substantially reducing a piece crystal bar of preparation, cost is saved.Simultaneously in the semiconductor industry, as high-end processing procedure is constantly sent out
Exhibition, IC design rule constantly reduce, and characteristic line breadth gradually develops to 10nm or less.Defect control is proposed to semi-conductor silicon chip manufacture
The higher requirement of system aspect just becomes fatal and lacks when the flaw size of substrate material is 1/3 or more of ULSI characteristic line breadth
It falls into, will lead to component failure, it is therefore desirable to which crystal defect control is in smaller scale to meet requirements at the higher level.
In order to reach the quality requirement of this high standard silicon wafer, rely solely on control solid liquid interface V/G (V monocrystalline pulling rate,
The axial-temperature gradient of G solid liquid interface) ratio can no longer meet requirement, need the thermal history of strict control crystal.From economy
Property and crystal quality control two aspect set out, challenge is proposed for traditional water cooling Analysis of Nested Design.Currently used water-cooled jacket master
If being fixed between concubine and bell by counter flange, at cylinder type position on thermal field top, crystal bar is generally from water-cooled jacket
Inside passes through.Inside generally flows through copper pipe by cooling water and is cooled down, and surface plates the extremely strong coating material of heat absorption capacity.This
Application it has been found that in this way the water-cooled jacket of method design in terms of improving pulling rate with positive effect, and for crystalline substance
The control of body heat history then shows not good enough, generates defect to be likely to result in the silicon single crystal rod of growth, influences monocrystalline silicon
The quality of stick.
In order to overcome the shortcomings of that conventional use of water-cooled jacket in terms of the cooling thermal history of crystal accurately control, controls monocrystalline silicon
The internal flaw of stick, present applicant proposes a kind of cooling devices applied to single crystal growing furnace, cold for drawing high quality single crystal silicon rod
But device specifically includes that
Water-cooled jacket, the water-cooled jacket include the annular cooling water circulation line being arranged in the water-cooled jacket；
Thermally conductive attachment is fixedly connected on the bottom end of the water-cooled jacket and downward extension portion length, for absorbing monocrystalline silicon
The heat and conduction to the water-cooled jacket of stick are cooled down, wherein the thermally conductive attachment is provided centrally with cavity, to allow
It states silicon single crystal rod to pass through, rationally controls ullage Temperature Distribution and adjust the cooling rate of silicon single crystal rod to control in silicon single crystal rod
Portion's defect.
The cooling device of the utility model includes water-cooled jacket and the thermally conductive attachment for being connected to water-cooled jacket bottom end, using thermally conductive attached
The thermal conductivity of part, absorbs the heat of silicon single crystal rod and conduction to the water-cooled jacket is cooled down, wherein in the thermally conductive attachment
The heart is provided with cavity, to allow the silicon single crystal rod to pass through, rationally controls ullage Temperature Distribution and adjusts the cold of silicon single crystal rod
But rate is to control silicon single crystal rod internal flaw, also, thermally conductive attachment absorbs the heat of silicon single crystal rod and conducts to the water cooling
Set is cooled down, and is cooled down the silicon single crystal rod grown in time, is provided power for crystal growth, to improve pulling rate, increases life
Produce efficiency.
In the following, cold for the cooling device of single crystal growing furnace and including this to the utility model with reference to Fig. 1, Fig. 2A and Fig. 2 B
But the single crystal growing furnace of device is described in detail, wherein Fig. 1 shows the part of the single crystal growing furnace of one embodiment of the utility model
Diagrammatic cross-section；Fig. 2A shows the diagrammatic cross-section of the cooling device of one embodiment of the utility model；Fig. 2 B is shown
The diagrammatic cross-section of the cooling device of the utility model another embodiment.
As an example, as shown in Figure 1, the single crystal growing furnace 1 includes the furnace body, bell 17 and pair for being internally provided with furnace chamber 11
Room (not shown), wherein the bell 17 is located at the top of the furnace body, and the concubine is located at the top of the bell 17, raw
Long silicon single crystal rod is cooled to room temperature in concubine.
In one example, it is provided with crucible in furnace chamber 11, for placing melting silicon material.Wherein, the crucible includes
The graphite crucible 13 and silica crucible 12 namely the silica crucible 12 set gradually from bottom to top is arranged in the graphite crucible
In 13, in use, being melting silicon material in silica crucible 12.
Illustratively, it is provided with insulating layer 18 on the inner wall of the furnace body, for completely cutting off the heat exchange with outside, stablizes
Thermal field in furnace chamber.Wherein, the material of the insulating layer 18 can be any thermal insulation material for being suitable for single crystal growing furnace, the heat preservation
Material can play the high temperature that buffer action is able to bear again in single crystal growing furnace, such as the material of the insulating layer 18 can be carbonization
Or graphited carbon fiber felt.
Further, the crucible further includes crucible pallet 14 and crucible supporting axis 15, wherein the crucible pallet 14 is set
It is placed in below crucible, such as the lower section of setting graphite crucible 13, and is connect with the crucible supporting axis 15, wherein crucible supporting
Axis 15 also extends through the insulating layer 18 of bottom of furnace body and is arranged in the bottom interior wall of furnace body, and the crucible supporting axis 15 is used to support
Crucible pallet 14 simultaneously drives the crucible lifting and rotation.
In one example, the single crystal growing furnace further includes the side heater 16 being set on the outside of crucible, side heating
Device 16 is cylindrical in shape the outside for being looped around crucible, is thermally formed silicon solution for carrying out to the silicon raw material in crucible, and form thermal field,
For example, optionally, the side heater 16 can be well known to those skilled in the art any in the outside of graphite crucible 13
Suitable side heater 16, for example, graphite heater, side heater are process by graphite or carbon fiber for material, tool
It is conductive.Optionally, for the requirement of electrical isolation, the electrode stone of quartz material processing is also cased with around side heater 16
English sheath (not shown).
It in one example, further include guide shell 19, the top of crucible is arranged in guide shell 19, and bottom end is located in crucible,
As shown in Figure 1, bottom end is located in silica crucible 12, and the top of guide shell 19 is connected with the top of insulating layer 18, guide shell 19
Around silicon single crystal rod growth district, the guide shell is used to completely cut off the heat generated from heater and guidance airflow, resistance
High-temperature fusion silicon material in disconnected heater and furnace body reduces the temperature of silicon single crystal rod, simultaneously directly to the heat radiation of silicon single crystal rod
The argon gas that guide shell blows concubine downwards, which is concentrated, to be directly sprayed near growth interface, and the heat dissipation of silicon single crystal rod is increased.
Further, as shown in Figure 1, the single crystal growing furnace further includes cooling device, the furnace chamber above the crucible is set
It is interior, such as be arranged in the furnace chamber of 12 top of silica crucible, for drawing high quality single crystal silicon rod.
Wherein, as shown in Figure 1, the cooling device includes water-cooled jacket 20 and the bottom for being fixedly connected on the water-cooled jacket 20
The thermally conductive attachment 21 for holding simultaneously downward extension portion length, only shows 20 He of water-cooled jacket in the form of white box for simplicity herein
Thermally conductive attachment 21, specific structure are described in detail in following content.
In one example, as shown in Figure 1, the top of water-cooled jacket 20 is set between bell and concubine, the water-cooled jacket
20, which extend through the bell, protrudes into the furnace chamber above crucible.
Further, the bottom face of the thermally conductive attachment 21 is located at the melt liquid (example in the crucible in the single crystal growing furnace
Such as melt silicon material) highest liquid level on, under the premise of not influencing crystal growth, the bottom face of thermally conductive attachment can be with highest
Liquid level is as close as so that the high-temperature part of the silicon single crystal rod just grown is cooled down in time.
In one example, the thermally conductive attachment 21 is located in the guide shell and there is interval between guide shell 19.
Further, as shown in Figure 1, thermally conductive attachment 21 is provided centrally with cavity, to allow silicon single crystal rod to pass through, the size of the cavity
Greater than the diameter of silicon single crystal rod.
In order to which the detailed construction of cooling device is explained and illustrated, in the following, specific real to two with reference to Fig. 2A and Fig. 2 B
Cooling device in applying is described.
In one example, as shown in Figure 2 A and 2 B, cooling device includes water-cooled jacket 20, and the water-cooled jacket 20 includes method
Orchid 201, tube body 202 and the annular cooling water circulation line 203 being arranged in the water-cooled jacket 20.Illustratively, the ring
The cooling water circulation pipe 203 of shape is arranged in the tube wall of the tube body 202, wherein cooling water is recycled in the annular cooling water
Circulation in pipeline.About the 203 annular cooling water circulation line is arranged at intervals on the composition of multiple pipelines in water-cooled jacket, described
Annular cooling water circulation line 203 can be copper pipe, or other suitable materials.
Illustratively, as shown in Figure 2 A and 2 B, the top of tube body 202 is arranged in flange 201, is used for the water-cooled jacket
20 are installed in single crystal growing furnace, for example, the flange 201 is fixed between the bell 17 and the concubine, are fixed on furnace
On furnace body between lid 17 and concubine, so that entire water-cooled jacket is installed in the furnace chamber of single crystal growing furnace.
In one example, in order to enable water-cooled jacket preferably to absorb heat, in the outboard sidewalls table of the tube body 202
Face is all covered with heat-sink shell (not shown), and the material of the heat-sink shell can be any suitable material, especially has good
The material of the black of heat absorptivity.
Be passed through in annular cooling water circulation line 203 can under room temperature cooling water or compare after cooling down
The lower cooling water of ambient temperature is quickly cooled down with carrying out heat exchange with the silicon single crystal rod of high temperature.
In one example, the material of the flange 201 and tube body 202 that include in the water-cooled jacket 20, which can be, arbitrarily to be had
Thermal conductive resin and material resistant to high temperature, such as metal material, wherein preferably, the flange 201 and tube body 202 are stainless
Steel.
Illustratively, the cooling device further includes for providing each of cooling water to annular cooling water circulation line 203
Kind equipment, such as cooling-water machine, water tank and water inlet pipe and outlet pipe etc., so as to have cooling always in annular cooling water circulation line
Water is recycled, those equipment can be used any suitable equipment well known to those skilled in the art, not do specific limit herein
It is fixed.
Further, the cooling device includes bottom end and the downward extension portion length for being fixedly connected on the water-cooled jacket
Thermally conductive attachment 21, wherein the thermally conductive attachment includes at least one heat-conducting cylinder for being connected to the water-cooled jacket bottom end, this is thermally conductive
The quantity and shape of cylinder reasonably can be selected and be converted according to actual Temperature Distribution.Wherein, the heat-conducting cylinder
Shape is cylinder-shaped (namely cylindrical), cone, truncated cone-shaped or their combination, reaches accurate control by the transformation of shape
The purpose of crystal temperature gradient distribution.
In one example, the 21 top internal diameter of thermally conductive attachment is identical as the 20 bottom end outer diameter of water-cooled jacket.
In one example, the thermally conductive attachment includes at least two heat-conducting cylinders with different thermal conductivity, which leads
Hot heat-conducting cylinder can be prepared by using the material with different thermal conductivity, suitable by reasonably selecting to have
The material of thermal conductivity control ullage Temperature Distribution rationally to adjust the thermal conductivity of entire thermally conductive attachment accurately to control
The temperature of combinations body, wherein the liquid level refers to the liquid level of melting silicon material in crucible.
In another example, there are the thermally conductive attachment multiple heat-conducting cylinder ecto-entads of different inner diameters to be arranged company
It is connected together, the top of each heat-conducting cylinder is both connected to the bottom end of water-cooled jacket, alternatively, can also further make outermost
The bottom end of the heat-conducting cylinder of side, which extends internally, covers the bottom surface for all heat-conducting cylinders for being located at the inside, and outermost heat-conducting cylinder
Sections inner side wall is connected on the lateral wall of the water-cooled jacket, and such set-up mode can increase thermally conductive attachment and water-cooled jacket connects
The stability connect, wherein the cavity that the permission silicon single crystal rod in thermally conductive attachment 21 passes through is made of the cylinder internal cavity of heat-conducting cylinder, position
It is greater than the diameter of silicon single crystal rod in the size of innermost heat-conducting cylinder, to guarantee that silicon single crystal rod can be worn out of thermally conductive attachment
It crosses.
In a specific embodiment, as shown in Figure 2 A, the thermally conductive attachment 21 include be set-located it is first thermally conductive
Cylinder 211 and the second heat-conducting cylinder 212, wherein 211 member base end of the first heat-conducting cylinder also extends over second heat-conducting cylinder
212 bottom surface.Wherein, the inner wall of part first heat-conducting cylinder 211 is fixedly connected on the lateral wall of the water-cooled jacket 20,
It is connected on the lateral wall of tube body 202, the top end face of second heat-conducting cylinder 212 is connected to the bottom face of the water-cooled jacket 20
On, namely be connected on the bottom face of tube body 202, alternatively, the portion outboard wall for being also possible to first heat-conducting cylinder 211 connects
It connects on the inner sidewall of the water-cooled jacket, the top end face of second heat-conducting cylinder 212 is connected to the bottom face of the water-cooled jacket 20
On, 211 member base end of the first heat-conducting cylinder also extends over the bottom surface of second heat-conducting cylinder 212.
In one example, the first heat-conducting cylinder and the adjacent side wall of the second heat-conducting cylinder are connected, or as shown in Figure 2 A, and first
There is interval between heat-conducting cylinder 211 and the adjacent side wall of the second heat-conducting cylinder 212.
Wherein, the thermal conductivity of first heat-conducting cylinder 211 is greater than the thermal conductivity of second heat-conducting cylinder 212, alternatively, described
The thermal conductivity of second heat-conducting cylinder 212 is greater than the thermal conductivity of first heat-conducting cylinder 211, in the present embodiment, as shown in Figure 2 A, institute
The material for stating the first heat-conducting cylinder 211 is graphite, and the material of the second heat-conducting cylinder 212 is quartz.
In another example, the cylinder internal cavity of multiple heat-conducting cylinders is opposite and stacks gradually be connected to one from top to bottom
It rises, for example, as shown in Figure 2 B, the thermally conductive attachment includes the first heat-conducting cylinder 211 and the second heat-conducting cylinder 212, wherein described first
The top end face of heat-conducting cylinder 211 connects the bottom face of the water-cooled jacket 20, the top end face connection of second heat-conducting cylinder 212 described the
The bottom face of one heat-conducting cylinder 211.
Any suitable mode, which can be used, connects multiple heat-conducting cylinders two-by-two, such as the mode welded or be spirally connected.?
When multiple heat-conducting cylinder has different thermal conductivity, cooling velocity of the silicon single crystal rod in each heat-conducting cylinder also will be different, can
By selecting the combination of suitable heat-conducting cylinder to reach using the difference of heating conduction the control to ullage Temperature Distribution.
In one example, the water-cooled jacket 20 includes tube body 202, and the top end face of first heat-conducting cylinder 211 connects institute
State the bottom face of tube body 202, wherein the thickness of the barrel of first heat-conducting cylinder 211 be gradually reduced from bottom to top to less than or
Equal to the thickness of the tube wall of the tube body 202, make first heat-conducting cylinder 211 barrel section shape it is trapezoidal, described the
The thickness of the barrel of two heat-conducting cylinders 212 is equal with the thickness of barrel of 211 bottom end of the first heat-conducting cylinder.
In the structure of thermally conductive attachment 21 as shown in Figure 2 B, it is in truncated cone-shaped to the first heat-conducting cylinder, and the second heat-conducting cylinder
Shape is cylindrical, and two kinds of heat-conducting cylinders of different shapes are linked together, alternatively, can also be that the shape of the first heat-conducting cylinder is in
Truncated cone-shaped, and the shape of the second heat-conducting cylinder is cylindrical, or being also possible to the first heat-conducting cylinder and the second heat-conducting cylinder is rotary table
Shape.
In addition, the thermal conductivity of first heat-conducting cylinder 211 is greater than second heat-conducting cylinder in structure as shown in Figure 2 B
212 thermal conductivity, alternatively, the thermal conductivity of second heat-conducting cylinder 212 is greater than the thermal conductivity of first heat-conducting cylinder 211, at this
In embodiment, the material of the first heat-conducting cylinder 211 is graphite, and the material of the second heat-conducting cylinder 212 is quartz, and graphite is thermally conductive with quartz
Property it is different, wherein the thermal conductivity of graphite is greater than the thermal conductivity of quartz.In the bottom-up lifting of the single crystal silicon of growth,
Heat dissipation in the second heat-conducting cylinder 212 of quartz can be slower than the heat dissipation in the first heat-conducting cylinder 211.
Also, by the shape of transformation heat-conducting cylinder, the thermal conductivity of thermally conductive attachment as shown in Figure 2 A is compared to as shown in Figure 2 B
Thermally conductive attachment thermal conductivity it is more preferable, cooling faster can select suitable shape conversion be formed according to different thermal fields
The different thermally conductive attachment of heat transfer property, to reach the control to ullage Temperature Distribution.
In the present embodiment, heat-conducting cylinder above-mentioned can be attached with water-cooled jacket in any suitable manner, including
But it is not limited to the mode of welding, alternatively, connecting by way of being spirally connected with water-cooled jacket.
Optionally, the material of the thermally conductive attachment (such as heat-conducting cylinder) includes in thermal insulation material, graphite, quartz, tungsten and molybdenum
At least one, or be also possible to it is other there is thermal conductivity and material resistant to high temperature, wherein thermal insulation material may include carbon
Change or graphited carbon fiber felt.
Wherein the internal diameter of thermally conductive attachment 21 and the internal diameter of water-cooled jacket are consistent or slightly difference, for example, described thermally conductive attached
The inside diameter ranges of part in 360mm between 600mm, namely positioned at innermost heat-conducting cylinder inside diameter ranges in 360mm to 600mm
Between.
Optionally, the wall thickness range of the heat-conducting cylinder in 10mm between 250mm, for example, knot as shown in Figure 2 A
In structure, the sum of thickness of barrel of the first heat-conducting cylinder 211 and the second heat-conducting cylinder 212 in 10mm between 250mm, and in such as Fig. 2 B
Shown in structure, the respective wall thickness of the first heat-conducting cylinder 211 and the second heat-conducting cylinder 212 can be made in 10mm to 250mm
Between, above-mentioned thickness is only as an example, be readily applicable to the utility model for other suitable thickness.
So far be over the key structure of the cooling device to the utility model and the single crystal growing furnace including the cooling device
Description, is also possible that other elements for complete cooling device and single crystal growing furnace, does not do repeat one by one herein.
Since silicon single crystal bar is formed by melting silicon material solidification and, and in the curing process, solid liquid interface
Temperature gradient play the role of to the quality for being formed by crystal bar it is great, if solid liquid interface is in admittedly intracorporal temperature gradient mistake
Greatly, easily make to be formed by crystal bar generate interstitial silicon atoms even dislocation group, solid liquid interface in admittedly intracorporal temperature gradient
Too small vacancy easy to form even COP defect.And suitable V/G influences the quality of crystal bar, concentration and the V/G of single crystal point defect have
Close, when V/G be equal to a certain critical value more than when, interstitial atom concentration reduce, when V/G in a certain critical value hereinafter, vacancy it is dense
Seldom, which is about 1.3 × 10 to degree-3cm-2min-1K-1(or 2.2 × 10-5cm-2sec-1K-1) left and right.Therefore,
Cause suitable V/G more difficult in the inside and outside temperature difference of the crystal bar of major diameter.So accurately control V/G is intact for growing
Sunken silicon single crystal bar is most important, and in the technical solution of the utility model, it is thermally conductive attached due to being arranged in the lower section of water-cooled jacket
Part, by carrying out the selecting come the thermally conductive attachment that form heat transfer property different, to reach of different shape designs and Heat Conduction Material
To the accurate control to ullage temperature, temperature gradient of solid-liquid interface is adjusted, and then accurately controls the crystalline substance of crystal temperature gradient
Degree is precipitated in difference and oxygen inside and outside stick, and COP defect and the density of dislocation group are when reducing volume production to produce zero defect (such as nothing
COP defect and dislocation group) silicon single crystal bar, finally improve the quality and production efficiency of the silicon single crystal bar of production.
Sometimes inevitably growth defect in silicon single crystal preparation process, and the preparation that do high quality crystal just needs pair
Defect generate after compound, forming core and growth process accurately controlled.And the generation of these defects and correlative after it
Physicochemical variation has direct relation with temperature, so being accurately controlled generation of the Temperature Distribution of crystal for control defect
It is of great significance with growing up.And due to can accurately be controlled temperature in the embodiment of the utility model, it is possible to avoid
Defect generate after compound, forming core and growth process, control the size and number of silicon single crystal rod internal flaw, height be finally straightened
The silicon single crystal rod of quality reaches the requirement of lower characteristic line breadth silicon wafer, by taking COP defect as an example, due to water-cooled jacket and thermally conductive attachment
Addition to cooling effect, silicon single crystal rod can be (such as 900 DEG C quickly through the fastest temperature region of COP defect growth
~1100 DEG C), to effectively prevent growing up for COP defect, control silicon single crystal rod internal flaw.
In addition, cooling down, making to monocrystalline silicon since the cooling water inside water-cooled jacket can carry out heat exchange with silicon single crystal rod
It obtains silicon single crystal rod heat dissipation quickly, can be improved the growth rate of silicon single crystal rod, thereby increasing productivity, save production cost.
The utility model is illustrated through the foregoing embodiment, but it is to be understood that, above-described embodiment is
Purpose for illustrating and illustrating, and be not intended to limit the invention within the scope of described embodiment.Furthermore ability
Field technique personnel are it is understood that the utility model is not limited to above-described embodiment, and introduction according to the present utility model is also
More kinds of variants and modifications can be made, these variants and modifications all fall within the utility model range claimed with
It is interior.The protection scope of the utility model is defined by the appended claims and their equivalents.
Claims (21)
1. a kind of cooling device applied to single crystal growing furnace, for drawing high quality single crystal silicon rod, which is characterized in that the cooling dress
It sets and includes:
Water-cooled jacket, the water-cooled jacket include the annular cooling water circulation line being arranged in the water-cooled jacket；
Thermally conductive attachment is fixedly connected on the bottom end of the water-cooled jacket and downward extension portion length, for absorbing silicon single crystal rod
Heat and conducting to the water-cooled jacket is cooled down, wherein the thermally conductive attachment is provided centrally with cavity, to allow the list
Crystalline silicon rod passes through, and rationally controls ullage Temperature Distribution and adjusts the cooling rate of silicon single crystal rod to control silicon single crystal rod inside and lack
It falls into.
2. cooling device as described in claim 1, which is characterized in that the thermally conductive attachment includes being connected to the water-cooled jacket bottom
At least one heat-conducting cylinder at end.
3. cooling device as described in claim 1, which is characterized in that the thermally conductive attachment is led including at least two with difference
Hot heat-conducting cylinder.
4. cooling device as claimed in claim 2, which is characterized in that multiple heat-conducting cylinders with different inner diameters are by extroversion
It is inside arranged and links together, alternatively, the cylinder internal cavity of multiple heat-conducting cylinders is opposite and stacks gradually be connected to one from top to bottom
It rises.
5. cooling device as described in claim 1, which is characterized in that the thermally conductive attachment includes that first to be set-located is led
Hot cylinder and the second heat-conducting cylinder, wherein the first heat-conducting cylinder member base end also extends over the bottom surface of second heat-conducting cylinder.
6. cooling device as claimed in claim 5, which is characterized in that the inner wall of part first heat-conducting cylinder is fixedly connected on
On the lateral wall of the water-cooled jacket, the top end face of second heat-conducting cylinder is connected on the bottom face of the water-cooled jacket.
7. cooling device as described in claim 1, which is characterized in that the thermally conductive attachment includes that the first heat-conducting cylinder and second is led
Hot cylinder, wherein the top end face of first heat-conducting cylinder connects the bottom face of the water-cooled jacket, the top end face of second heat-conducting cylinder
Connect the bottom face of first heat-conducting cylinder.
8. cooling device as claimed in claim 7, which is characterized in that the water-cooled jacket includes tube body, first heat-conducting cylinder
Top end face connect the bottom face of the tube body, wherein the thickness of the barrel of first heat-conducting cylinder is gradually reduced from bottom to top
To less than or the tube wall equal to the tube body thickness.
9. cooling device as claimed in claim 7, which is characterized in that the thickness of the barrel of second heat-conducting cylinder and described the
The thickness of the barrel of one heat-conducting cylinder bottom end is equal.
10. cooling device as described in claim 5 or 7, which is characterized in that the thermal conductivity of first heat-conducting cylinder is greater than described
The thermal conductivity of second heat-conducting cylinder, alternatively, the thermal conductivity of second heat-conducting cylinder is greater than the thermal conductivity of first heat-conducting cylinder.
11. cooling device as described in claim 1, which is characterized in that the thermally conductive attachment head internal diameter and the water-cooled jacket
Bottom end outer diameter is identical.
12. cooling device as claimed in claim 2, which is characterized in that the shape of the heat-conducting cylinder be cylinder-shaped, cone,
Truncated cone-shaped or their combination.
13. cooling device as described in claim 1, which is characterized in that the material of the thermally conductive attachment includes thermal insulation material, stone
At least one of ink, quartz, tungsten and molybdenum.
14. cooling device as described in claim 1, which is characterized in that the inside diameter ranges of the thermally conductive attachment 360mm extremely
Between 600mm.
15. cooling device as claimed in claim 2, which is characterized in that the wall thickness range of the heat-conducting cylinder 10mm extremely
Between 250mm.
16. cooling device as described in claim 1, which is characterized in that the water-cooled jacket further include:
Tube body, the annular cooling water circulation line are arranged in the tube wall of the tube body, wherein cooling water is cold in the annular
But circulation in water circulation pipe；
The top of the tube body is arranged in flange, for the water-cooled jacket to be installed in single crystal growing furnace；
Heat-sink shell is covered on the outer side wall surface of the tube body.
17. cooling device as claimed in claim 16, which is characterized in that the material of the tube body includes stainless steel, the ring
The cooling water circulation pipe of shape includes copper pipe.
18. a kind of single crystal growing furnace, for drawing zero defect silicon single crystal rod, which is characterized in that the single crystal growing furnace includes:
It is internally provided with the furnace body of furnace chamber；
Crucible is arranged in the furnace chamber；
Cooling device as described in one of claim 1 to 17 is arranged in the furnace chamber above the crucible, wherein described to lead
The bottom face of hot attachment is located on the highest liquid level of the melt liquid in the crucible in the single crystal growing furnace.
19. single crystal growing furnace as claimed in claim 18, which is characterized in that the single crystal growing furnace further include:
Bell, positioned at the top of the furnace body；
Concubine, positioned at the top of the bell, wherein the top of the water-cooled jacket is fixed at the bell and the concubine
Between.
20. single crystal growing furnace as claimed in claim 18, which is characterized in that the top of the water-cooled jacket is provided with flange, the method
Orchid is fixed between the bell and the concubine.
21. single crystal growing furnace as claimed in claim 18, which is characterized in that the single crystal growing furnace further include:
Insulating layer is arranged on the inner wall of the furnace body,
Guide shell, the top of the guide shell are fixedly connected on the top end face of the insulating layer, the bottom end position of the guide shell
In the top of the crucible, wherein there is interval between the thermally conductive attachment and the guide shell.
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| CN201821169882.4U CN208562590U (en) | 2018-07-20 | 2018-07-20 | A kind of cooling device and single crystal growing furnace applied to single crystal growing furnace |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110735179A (en) * | 2018-07-20 | 2020-01-31 | 上海新昇半导体科技有限公司 | cooling device applied to single crystal furnace and single crystal furnace |
| WO2021140758A1 (en) * | 2020-01-10 | 2021-07-15 | 信越半導体株式会社 | Single crystal manufacturing device |
| JP7115592B1 (en) | 2021-05-28 | 2022-08-09 | 信越半導体株式会社 | Single crystal manufacturing equipment |
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2018
- 2018-07-20 CN CN201821169882.4U patent/CN208562590U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110735179A (en) * | 2018-07-20 | 2020-01-31 | 上海新昇半导体科技有限公司 | cooling device applied to single crystal furnace and single crystal furnace |
| WO2021140758A1 (en) * | 2020-01-10 | 2021-07-15 | 信越半導体株式会社 | Single crystal manufacturing device |
| JP2021109804A (en) * | 2020-01-10 | 2021-08-02 | 信越半導体株式会社 | Apparatus for manufacturing single crystal |
| CN114929951A (en) * | 2020-01-10 | 2022-08-19 | 信越半导体株式会社 | Single crystal manufacturing apparatus |
| US20230015551A1 (en) * | 2020-01-10 | 2023-01-19 | Shin-Etsu Handotai Co., Ltd. | Apparatus for manufacturing single crystal |
| JP7115592B1 (en) | 2021-05-28 | 2022-08-09 | 信越半導体株式会社 | Single crystal manufacturing equipment |
| WO2022249614A1 (en) * | 2021-05-28 | 2022-12-01 | 信越半導体株式会社 | Monocrystal production device |
| JP2022182823A (en) * | 2021-05-28 | 2022-12-08 | 信越半導体株式会社 | Single crystal production apparatus |
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