CN207062425U - A kind of large scale class single crystal seed - Google Patents
A kind of large scale class single crystal seed Download PDFInfo
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- CN207062425U CN207062425U CN201720873644.0U CN201720873644U CN207062425U CN 207062425 U CN207062425 U CN 207062425U CN 201720873644 U CN201720873644 U CN 201720873644U CN 207062425 U CN207062425 U CN 207062425U
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Abstract
This application discloses a kind of large scale class single crystal seed, the large scale class single crystal seed includes multiple compact arranged seed crystal monomers, the predeterminated position above welding of all seed crystal monomers is integrated, and has splicing seams below the predeterminated position of the seed crystal monomer.Above-mentioned large scale class single crystal seed, influence of the splicing seams to ingot casting can be prevented, it is effective to prevent polysilicon forming core during class monocrystalline ingot casting.
Description
Technical field
The utility model belongs to ingot casting technology field, more particularly to a kind of large scale class single crystal seed.
Background technology
In photovoltaic industry, what is be currently mainly used is the battery that czochralski method monocrystalline silicon and casting polysilicon make
Piece.Compared with pulling single crystal, polycrystalline silicon ingot casting possesses the advantage that yield is big and cost is low, but the conversion efficiency of polysilicon chip will
Less than monocrystalline, then a kind of class monocrystalline to fall between arises at the historic moment.This class monocrystalline made using ingot wayses is produced
Product, use dislocation-free single crystal to be laid on crucible bottom as seed crystal and be used for forming core, and to ensure in seed crystal process of deployment
Splicing seams do not fall silicon, that is, reduce the quantity of splicing seams as far as possible.
The most popular method of institute is as follows at present：By the whole rod dice shape of pulling single crystal, then with 36 pieces (according to stove
Platform size and varied number) it is laid on crucible bottom and is used as seed crystal, this laying method can bring substantial amounts of splicing seams, to square
Undamaged make of seed crystal requires high, requires high to the gimmick of putting of employee.Once producing splicing seams, the forming core point of on-monocrystalline is just
Quality of the meeting strong influence to the whole ingot of class monocrystalline.Immediate scheme is at present：Strip is made using the mode cut vertically
Seed crystal of the seed crystal of shape without making square, but this preparation method can only do bigger seed crystal, reduce the number of splicing seams
Measure and can not thoroughly eliminate splicing seams.
Utility model content
To solve the above problems, the utility model provides a kind of large scale class single crystal seed, splicing seams pair can be prevented
The influence of ingot casting, it is effective to prevent polysilicon forming core during class monocrystalline ingot casting.
A kind of large scale class single crystal seed provided by the utility model, including multiple compact arranged seed crystal monomers, own
The seed crystal monomer predeterminated position above welding it is integrated, and below the predeterminated position of the seed crystal monomer have splicing
Seam.
Preferably, in above-mentioned large scale class single crystal seed, the scope of the predeterminated position is from the seed crystal monomer
5mm below top to 10mm.
Preferably, in above-mentioned large scale class single crystal seed, entirety and crucible that all seed crystal monomers are arranged in
Shape match.
Preferably, in above-mentioned large scale class single crystal seed, the quantity of the seed crystal monomer is 25 pieces or 36 pieces.
Preferably, in above-mentioned large scale class single crystal seed, the diameter range of the seed crystal monomer is：156.5-
156.8mm。
Preferably, in above-mentioned large scale class single crystal seed, the scope of the deflection angle of the seed crystal monomer is：0 ° extremely
90°。
By foregoing description, above-mentioned large scale class single crystal seed provided by the utility model, due to including multiple tight
The seed crystal monomer of solid matter row, the predeterminated position above welding of all seed crystal monomers is integrated, and the seed crystal monomer
Predeterminated position below there are splicing seams, therefore influence of the splicing seams to ingot casting can be prevented, it is effective to prevent polysilicon in class
Forming core during monocrystalline ingot casting.
Brief description of the drawings
, below will be to embodiment in order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art
Or the required accompanying drawing used is briefly described in description of the prior art, it should be apparent that, drawings in the following description are only
It is embodiment of the present utility model, for those of ordinary skill in the art, on the premise of not paying creative work, also
Other accompanying drawings can be obtained according to the accompanying drawing of offer.
Fig. 1 is the schematic diagram for the first large scale class single crystal seed that the embodiment of the present application provides.
Embodiment
Core concept of the present utility model is to provide a kind of large scale class single crystal seed, can prevent splicing seams to ingot casting
Influence, it is effective to prevent polysilicon forming core during class monocrystalline ingot casting.
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describing, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belong to the scope of the utility model protection.
The first large scale class single crystal seed that the embodiment of the present application provides is as shown in figure 1, Fig. 1 carries for the embodiment of the present application
The schematic diagram of the first the large scale class single crystal seed supplied, the large scale class single crystal seed include multiple compact arranged seed crystal lists
Body 1 (part that dotted line frame fences up), the predeterminated position above welding of all seed crystal monomers 1 are integrated and described
There are splicing seams 2 below the predeterminated position of seed crystal monomer 1.
It should be noted that above-mentioned splicing seams are seed crystal monomers arrange after inherently inevitably, only exist
Predeterminated position micro- molten mode utilized above is by Seamlines removing between these seed crystal monomers, without the situation in any gap
Under, during class monocrystalline is grown using this seed crystal, leakage silicon phenomenon just no longer occurs.
The first large scale class single crystal seed provided by foregoing description, the embodiment of the present application, due to including more
Individual compact arranged seed crystal monomer, the predeterminated position above welding of all seed crystal monomers is integrated, and the seed crystal
There are splicing seams below the predeterminated position of monomer, therefore influence of the splicing seams to ingot casting can be prevented, effectively prevent polysilicon
The forming core during class monocrystalline ingot casting.
Second of large scale class single crystal seed that the embodiment of the present application provides, is in the first above-mentioned large scale class monocrystalline seed
On the basis of crystalline substance, in addition to following technical characteristic：
The scope of the predeterminated position is from 5mm to 10mm below the top of the seed crystal monomer.
In such a case, it is possible to it is micro- molten using surface progress of half process of smelting to seed crystal monomer, when solid liquid interface reaches
During 5mm to 10mm, directional solidification is begun to, moves up solid liquid interface until all melts crystallize, this allows for seed crystal monomer
A part forms the entirety of a seamless connection above, effectively avoids Lou silicon phenomenon, in addition, this is only a preferred range, when
The value of other predeterminated positions can also be so set according to actual conditions, be not intended to limit herein.
The third large scale class single crystal seed that the embodiment of the present application provides, is in the first above-mentioned large scale class monocrystalline seed
On the basis of crystalline substance, in addition to following technical characteristic：
The entirety and the shape of crucible that all seed crystal monomers are arranged in match.
It should be noted that it is necessary in view of subsequently growing the crucible that utilizes of brilliant process when this seed crystal is made
Shape, thus after the two is matched, it is possible to it is more easily long brilliant, improve operating efficiency.
The 4th kind of large scale class single crystal seed that the embodiment of the present application provides, is in the first above-mentioned large scale class monocrystalline seed
On the basis of crystalline substance, in addition to following technical characteristic：
The quantity of the seed crystal monomer is 25 pieces or 36 pieces.
, can be with it should be noted that the scheme of the seed crystal monomer of both quantity is corresponding with different types of crucible size
Determine to be melt into an entirety by the seed crystal monomer of which kind of quantity is micro- according to being actually needed.
The 5th kind of large scale class single crystal seed that the embodiment of the present application provides, is in the first above-mentioned large scale class monocrystalline seed
On the basis of crystalline substance, in addition to following technical characteristic：
The diameter range of the seed crystal monomer is：156.5-156.8mm.
It should be noted that the seed crystal monomer of this diameter range is relatively common, it is easily operated.
The 6th kind of large scale class single crystal seed that the embodiment of the present application provides, be it is above-mentioned the first to the 5th kind of large scale
In class single crystal seed it is any on the basis of, in addition to following technical characteristic：
The scope of the deflection angle of the seed crystal monomer is：0 ° to 90 °.
That is, two adjacent seed crystal monomers can select different deflection angles to go to cut when making, herein
It is not intended to limit.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or new using this practicality
Type.A variety of modifications to these embodiments will be apparent for those skilled in the art, determine herein
The General Principle of justice can be realized in other embodiments in the case where not departing from spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The most wide scope consistent with features of novelty.
Claims (6)
1. a kind of large scale class single crystal seed, it is characterised in that including multiple compact arranged seed crystal monomers, all seeds
The predeterminated position above welding of brilliant monomer is integrated, and has splicing seams below the predeterminated position of the seed crystal monomer.
2. large scale class single crystal seed according to claim 1, it is characterised in that the scope of the predeterminated position is from institute
State 5mm to 10mm below the top of seed crystal monomer.
3. large scale class single crystal seed according to claim 1, it is characterised in that all seed crystal monomers are arranged in
Entirety and the shape of crucible match.
4. large scale class single crystal seed according to claim 1, it is characterised in that the quantity of the seed crystal monomer is 25 pieces
Or 36 pieces.
5. large scale class single crystal seed according to claim 1, it is characterised in that the diameter range of the seed crystal monomer
For：156.5-156.8mm.
6. the large scale class single crystal seed according to claim any one of 1-5, it is characterised in that the seed crystal monomer it is inclined
The scope of gyration is：0 ° to 90 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720873644.0U CN207062425U (en) | 2017-07-17 | 2017-07-17 | A kind of large scale class single crystal seed |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720873644.0U CN207062425U (en) | 2017-07-17 | 2017-07-17 | A kind of large scale class single crystal seed |
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| CN207062425U true CN207062425U (en) | 2018-03-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107190317A (en) * | 2017-07-17 | 2017-09-22 | 晶科能源有限公司 | A kind of large scale class single crystal seed and preparation method thereof |
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2017
- 2017-07-17 CN CN201720873644.0U patent/CN207062425U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107190317A (en) * | 2017-07-17 | 2017-09-22 | 晶科能源有限公司 | A kind of large scale class single crystal seed and preparation method thereof |
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