CN106400103A - Manufacturing method for doped monocrystal silicon ingot for solar cell - Google Patents
Manufacturing method for doped monocrystal silicon ingot for solar cell Download PDFInfo
- Publication number
- CN106400103A CN106400103A CN201611115905.9A CN201611115905A CN106400103A CN 106400103 A CN106400103 A CN 106400103A CN 201611115905 A CN201611115905 A CN 201611115905A CN 106400103 A CN106400103 A CN 106400103A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- intrinsic
- silicon
- monocrystal silicon
- monocrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a manufacturing method for a doped monocrystal silicon ingot for a solar cell. The method comprises the following steps: obtaining intrinsic seed crystal and removing impurities; putting the intrinsic seed crystal at the bottom of a crucible; putting a silicon material above the intrinsic seed crystal and adding the mother alloy containing doped element into the silicon material; utilizing a directional solidification method to cast ingot, thereby obtaining the monocrystal silicon ingot. According to the manufacturing method for the doped monocrystal silicon ingot for the solar cell, provided by the invention, the minority carrier lifetime of the solar cell can be prolonged, the degree of light degradation can be reduced, the dislocation can be reduced and the conversion efficiency of the solar cell can be promoted.
Description
Technical field
The invention belongs to photovoltaic apparatus manufacturing technology field, more particularly to a kind of doping class list for solar cell
The preparation method of crystal silicon ingot.
Background technology
At present, solar energy battery adopted silicon chip either monocrystalline or polycrystalline typically all selects single incorporation boron element, that is,
Boron-doping monocrystalline silicon or polysilicon, this silicon chip is prevailing for a time due to simple production process, but this silicon chip under light illumination or
When carrier injects it may appear that obvious photo attenuation, thus leading to transformation efficiency to decline, and the main cause of photo attenuation
It is the life-span that the boron oxygen complex that doping boron element produces can reduce minority carrier.On the other hand, in current technology bar
Under part, the conversion efficiency of polycrystalline battery is typically lower 1-2% than monocrystalline, this is because there are a large amount of dislocations in polycrystal silicon ingot, and position
Wrong few monocrystal silicon is relatively costly, and yield is relatively low, the wrong low monocrystalline side of next life presentation by way of ingot casting rather than lifting
Rod is it becomes possible to the generation reducing dislocation improves yield again.
Content of the invention
For solving the above problems, the invention provides a kind of making side of the doping class monocrystal silicon for solar cell
Method, it is possible to increase the minority carrier life time of solar cell, reduces the degree of photo attenuation, reduces dislocation, lifting solar cell
Conversion efficiency.
A kind of preparation method of doping class monocrystal silicon for solar cell that the present invention provides, including：
Obtain intrinsic seed and carry out removal of impurities；
Described intrinsic seed is positioned over crucible bottom；
Put into silicon material above described intrinsic seed, and put into the foundry alloy with doped chemical in described silicon material；
Carry out ingot casting using directional solidification mode, obtain class monocrystal silicon.
Preferably, in the above-mentioned preparation method for the doping class monocrystal silicon of solar cell,
Before described acquisition intrinsic seed, also include：
Obtain intrinsic monocrystalline；
Along the crest line of described intrinsic monocrystalline, cut open as monocrystalline square rod；
Described monocrystalline square rod is blocked as monocrystalline square, as intrinsic seed.
Preferably, in the above-mentioned preparation method for the doping class monocrystal silicon of solar cell,
Before the intrinsic monocrystalline of described acquisition, also include：
Using vertical pulling technique, virgin polycrystalline silicon is drawn into described intrinsic monocrystalline.
Preferably, in the above-mentioned preparation method for the doping class monocrystal silicon of solar cell,
Described acquisition intrinsic seed simultaneously carries out removal of impurities and includes：
Obtain intrinsic seed, it is carried out with pickling and ultrasonic wave cleaning.
Preferably, in the above-mentioned preparation method for the doping class monocrystal silicon of solar cell,
Described carry out ingot casting using directional solidification mode, obtain class monocrystal silicon and include：
Described silicon material is melted in heating；
By temperature control, stop fusing when melting silicon materials are to described intrinsic seed；
Long brilliant on described intrinsic seed, obtain class monocrystal silicon.
Preferably, in the above-mentioned preparation method for the doping class monocrystal silicon of solar cell,
Described putting in described silicon material has the foundry alloy of doped chemical and is：
The foundry alloy doped with gallium element is put in described silicon material.
The making of the above-mentioned doping class monocrystal silicon for solar cell being provided by foregoing description, the present invention
Method, due to including obtaining intrinsic seed and carry out removal of impurities；Described intrinsic seed is positioned over crucible bottom；In described intrinsic seed
Silicon material is put in brilliant top, and puts into the foundry alloy with doped chemical in described silicon material；Carried out using directional solidification mode
Ingot casting, obtains class monocrystal silicon, therefore, it is possible to improve the minority carrier life time of solar cell, reduces the degree of photo attenuation, reduces
Dislocation, the conversion efficiency of lifting solar cell.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing providing obtains other accompanying drawings.
The preparation method of the first doping class monocrystal silicon for solar cell that Fig. 1 provides for the embodiment of the present application
Schematic diagram.
Specific embodiment
The core concept of the present invention is to provide a kind of preparation method of the doping class monocrystal silicon for solar cell,
The minority carrier life time of solar cell can be improved, reduce the degree of photo attenuation, reduce dislocation, the conversion of lifting solar cell
Efficiency.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
The preparation method such as Fig. 1 of the first doping class monocrystal silicon for solar cell that the embodiment of the present application provides
Shown, the preparation method of the first doping class monocrystal silicon for solar cell that Fig. 1 provides for the embodiment of the present application
Schematic diagram, the method comprises the steps：
S1：Obtain intrinsic seed and carry out removal of impurities；
Described intrinsic seed is exactly the seed crystal not containing any impurity element, can be added without foundry alloy, using vertical pulling method
Pulling monocrystal, is then cut into intrinsic seed again, the less and few son of monocrystal rod impurity drawing out using this intrinsic seed
Life-span is higher.
S2：Described intrinsic seed is positioned over crucible bottom；
Specifically, in loading stage, it is positioned over crucible bottom it is ensured that the seed crystal of each position is in by smooth for intrinsic seed
Same height, makes growth course from start to finish keep uniform state.
S3：Put into silicon material above described intrinsic seed, and put into female conjunction with doped chemical in described silicon material
Gold；
It should be noted that this step can be using existing mode, to be sequentially placed into the silicon material of each size, and upper
Orientation is put into foundry alloy, and the bottom that focuses on here only has intrinsic seed, does not have doped chemical, to improve less the sub- longevity
Life, just and doped chemical is arranged at only top, this doped chemical is the resistivity in order to adjust final products.
S4：Carry out ingot casting using directional solidification mode, obtain class monocrystal silicon.
Using this species monocrystalline growing process, not only decreased the generation of dislocation but also improve yield.
By foregoing description, the embodiment of the present application provide above-mentioned the first be used for the doping class list of solar cell
The preparation method of crystal silicon ingot, due to including obtaining intrinsic seed and carry out removal of impurities；Described intrinsic seed is positioned over crucible bottom；
Put into silicon material above described intrinsic seed, and put into the foundry alloy with doped chemical in described silicon material；Using orientation
Solidification mode carries out ingot casting, obtains class monocrystal silicon, therefore, it is possible to improve the minority carrier life time of solar cell, reduces photo attenuation
Degree, reduce dislocation, lifting solar cell conversion efficiency.
The embodiment of the present application provide second be used for solar cell doping class monocrystal silicon preparation method, be
Above-mentioned the first be used for the preparation method of doping class monocrystal silicon of solar cell on the basis of, also include following technology spy
Levy：
Before described acquisition intrinsic seed, also include：
Obtain intrinsic monocrystalline, specifically, the 9 cun of monocrystalline making can be selected, seed crystal needs to be foursquare, and needs
Adapt to length of side 156mm, make this length of side square be necessary for using at least 9 cun monocrystalline pole naturally it is also possible to
Increase, but silicon material will be wasted；
Along the crest line of described intrinsic monocrystalline, cut open as monocrystalline square rod；
Described monocrystalline square rod is blocked as monocrystalline square, as intrinsic seed, specifically, is by a scale by gained square rod
Very little flour milling blocks the monocrystalline square for one piece of some length.
The embodiment of the present application provide the third be used for solar cell doping class monocrystal silicon preparation method, be
On the basis of above-mentioned second is used for the preparation method of doping class monocrystal silicon of solar cell, also include following technology special
Levy：
Before the intrinsic monocrystalline of described acquisition, also include：
Using vertical pulling technique, virgin polycrystalline silicon is drawn into described intrinsic monocrystalline, it should be noted that utilizing vertical pulling technique
It is obtained in that the intrinsic monocrystalline of better performances, degree of purity is good, subsequently grow class monocrystalline, minority carrier life time as intrinsic seed
High.
The embodiment of the present application provide the 4th kind be used for solar cell doping class monocrystal silicon preparation method, be
On the basis of above-mentioned the third is used for the preparation method of doping class monocrystal silicon of solar cell, also include following technology special
Levy：
Described acquisition intrinsic seed simultaneously carries out removal of impurities and includes：
Obtain intrinsic seed, it is carried out with pickling and ultrasonic wave cleaning, thus can remove possible being stained with surface further
Dirt, is further ensured that pollution will not be brought in the class monocrystalline of growth by intrinsic seed, thus ensureing the growth quality of class monocrystalline.
The embodiment of the present application provide the 5th kind be used for solar cell doping class monocrystal silicon preparation method, be
On the basis of above-mentioned 4th kind is used for the preparation method of doping class monocrystal silicon of solar cell, also include following technology special
Levy：
Described carry out ingot casting using directional solidification mode, obtain class monocrystal silicon and include：
Described silicon material is melted in heating；
By temperature control, stop fusing when melting silicon materials are to described intrinsic seed；
Long brilliant on described intrinsic seed, obtain class monocrystal silicon, specifically, enter crystal growing stage after stopping fusing, make
It is long brilliant, thus obtaining class monocrystal silicon on single crystal seed layer.
By above-mentioned class monocrystalline growing process, dislocation can be reduced, improve production capacity, reduces cost.
The embodiment of the present application provide the 6th kind be used for solar cell doping class monocrystal silicon preparation method, be
Above-mentioned the first be used in the preparation method of doping class monocrystal silicon of solar cell on the basis of any one to the 5th kind, and also
Including following technical characteristic：
Described putting in described silicon material has the foundry alloy of doped chemical and is：
Put into the foundry alloy doped with gallium element in described silicon material, it should be noted that by mix gallium reduce photic
Decay.
In sum, said method using gallium doping and class single crystal process combine, and using be not use foundry alloy
Monocrystalline square seed crystal it becomes possible to produce the class monocrystalline silicon piece of a kind of low dislocation and low light attenuation.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple modifications to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can be realized without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and be to fit to and principles disclosed herein and features of novelty phase one
The scope the widest causing.
Claims (6)
1. a kind of preparation method of the doping class monocrystal silicon for solar cell is it is characterised in that include：
Obtain intrinsic seed and carry out removal of impurities；
Described intrinsic seed is positioned over crucible bottom；
Put into silicon material above described intrinsic seed, and put into the foundry alloy with doped chemical in described silicon material；
Carry out ingot casting using directional solidification mode, obtain class monocrystal silicon.
2. the doping class monocrystal silicon for solar cell according to claim 1 preparation method it is characterised in that
Before described acquisition intrinsic seed, also include：
Obtain intrinsic monocrystalline；
Along the crest line of described intrinsic monocrystalline, cut open as monocrystalline square rod；
Described monocrystalline square rod is blocked as monocrystalline square, as intrinsic seed.
3. the doping class monocrystal silicon for solar cell according to claim 2 preparation method it is characterised in that
Before the intrinsic monocrystalline of described acquisition, also include：
Using vertical pulling technique, virgin polycrystalline silicon is drawn into described intrinsic monocrystalline.
4. the doping class monocrystal silicon for solar cell according to claim 3 preparation method it is characterised in that
Described acquisition intrinsic seed simultaneously carries out removal of impurities and includes：
Obtain intrinsic seed, it is carried out with pickling and ultrasonic wave cleaning.
5. the doping class monocrystal silicon for solar cell according to claim 4 preparation method it is characterised in that
Described carry out ingot casting using directional solidification mode, obtain class monocrystal silicon and include：
Described silicon material is melted in heating；
By temperature control, stop fusing when melting silicon materials are to described intrinsic seed；
Long brilliant on described intrinsic seed, obtain class monocrystal silicon.
6. the preparation method of the doping class monocrystal silicon for solar cell according to any one of claim 1-5, its
It is characterised by,
Described putting in described silicon material has the foundry alloy of doped chemical and is：
The foundry alloy doped with gallium element is put in described silicon material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611115905.9A CN106400103A (en) | 2016-12-07 | 2016-12-07 | Manufacturing method for doped monocrystal silicon ingot for solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611115905.9A CN106400103A (en) | 2016-12-07 | 2016-12-07 | Manufacturing method for doped monocrystal silicon ingot for solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106400103A true CN106400103A (en) | 2017-02-15 |
Family
ID=58084206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611115905.9A Pending CN106400103A (en) | 2016-12-07 | 2016-12-07 | Manufacturing method for doped monocrystal silicon ingot for solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106400103A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112813495A (en) * | 2019-11-18 | 2021-05-18 | 苏州阿特斯阳光电力科技有限公司 | Method for recycling seed crystals for monocrystalline silicon-like ingot casting |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101591807A (en) * | 2009-06-24 | 2009-12-02 | 浙江大学 | Directionally solidified casting monocrystalline silicon of nitrating and preparation method thereof |
| CN103088406A (en) * | 2011-11-01 | 2013-05-08 | 阿特斯(中国)投资有限公司 | Seed crystal preparation method and monocrystalline-silicon-like ingot casting method |
| CN104152993A (en) * | 2014-08-06 | 2014-11-19 | 江西赛维Ldk太阳能高科技有限公司 | Method capable of eliminating measurement of melting height of seed crystals for polycrystalline silicon ingot casting and polycrystalline silicon ingot casting furnace |
| CN105568364A (en) * | 2015-12-30 | 2016-05-11 | 佛山市业丰赛尔陶瓷科技有限公司 | Method for improving yield and/or conversion efficiency of cast monocrystalline silicon ingot |
| CN106087042A (en) * | 2016-06-22 | 2016-11-09 | 晶科能源有限公司 | A kind of manufacture method of polycrystalline cast ingot seed crystal |
-
2016
- 2016-12-07 CN CN201611115905.9A patent/CN106400103A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101591807A (en) * | 2009-06-24 | 2009-12-02 | 浙江大学 | Directionally solidified casting monocrystalline silicon of nitrating and preparation method thereof |
| CN103088406A (en) * | 2011-11-01 | 2013-05-08 | 阿特斯(中国)投资有限公司 | Seed crystal preparation method and monocrystalline-silicon-like ingot casting method |
| CN104152993A (en) * | 2014-08-06 | 2014-11-19 | 江西赛维Ldk太阳能高科技有限公司 | Method capable of eliminating measurement of melting height of seed crystals for polycrystalline silicon ingot casting and polycrystalline silicon ingot casting furnace |
| CN105568364A (en) * | 2015-12-30 | 2016-05-11 | 佛山市业丰赛尔陶瓷科技有限公司 | Method for improving yield and/or conversion efficiency of cast monocrystalline silicon ingot |
| CN106087042A (en) * | 2016-06-22 | 2016-11-09 | 晶科能源有限公司 | A kind of manufacture method of polycrystalline cast ingot seed crystal |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112813495A (en) * | 2019-11-18 | 2021-05-18 | 苏州阿特斯阳光电力科技有限公司 | Method for recycling seed crystals for monocrystalline silicon-like ingot casting |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101370970B (en) | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics | |
| EP2505695A2 (en) | Methods for manufacturing cast silicon from seed crystals | |
| CN101654805B (en) | Preparation method of casting polysilicon with large crystal grains in single crystal direction | |
| CN102277618B (en) | Polysilicon ingot, manufacturing method and growing furnace thereof, as well as bottom plate and solar cell of growing furnace | |
| CN101864594A (en) | Ingot casting method for quasi-monocrystalline silicon | |
| CN108842179B (en) | Method for preparing double-crystal-orientation polycrystalline silicon ingot by setting sigma 3 twin crystal boundary | |
| CN102797035B (en) | Polycrystal silicon ingot and manufacture method, solar cell | |
| CN102268724A (en) | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell | |
| CN101591808A (en) | Mix directionally solidified casting monocrystalline silicon of germanium and preparation method thereof | |
| CN104124292A (en) | Boron-gallium codoping monocrystalline silicon piece and preparation method thereof, and solar cell | |
| CN109097827A (en) | A kind of twin crystal is to polycrystalline silicon ingot casting and preparation method thereof | |
| Kivambe et al. | Emerging technologies in crystal growth of photovoltaic silicon: progress and challenges | |
| CN102560641A (en) | N-type casting policrystalline silicon with uniform doping resistivity and preparation method thereof | |
| CN103361724A (en) | Boron-gallium co-doped efficient polycrystalline silicon and preparation method thereof | |
| CN102797036B (en) | Polycrystal silicon ingot and manufacture method, solaode | |
| CN107523858A (en) | A kind of seed crystal laying method, the casting method of class monocrystal silicon and class monocrystalline silicon piece | |
| Zhang et al. | Controlling dislocation gliding and propagation in quasi-single crystalline silicon by using< 110>-oriented seeds | |
| CN102560646A (en) | N-type casting monocrystalline silicon with uniform doping resistivity and preparation method thereof | |
| CN103117331A (en) | N-type heterojunction solar cell and manufacturing method thereof | |
| CN105002557A (en) | Gallium, germanium and boron co-doped polycrystalline silicon and preparation method thereof | |
| CN102534772B (en) | Method for growing large-grain cast polycrystalline silicon | |
| US20090098715A1 (en) | Process for manufacturing silicon wafers for solar cell | |
| CN202744648U (en) | Crucible for prolonging minority carrier lifetime of silicon ingot | |
| CN203474952U (en) | Quartz crucible for ingot casting | |
| CN102732943A (en) | Method for producing monocrystalline silicon cast ingot |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170215 |