CN102758243A - Seed crystal of large-size single crystal and production process thereof - Google Patents

Abstract

The invention discloses a seed crystal of a large-size single crystal. The seed crystal of the large-size single crystal is characterized by having the length of 700-1,200mm, the thickness of 5-30mm and the width of 50-400mm. The production process of the seed crystal of the large-size single crystal comprises the following steps of: (1) removing the tail of a single crystal silicon rod with the high diameter and cutting the single crystal silicon rod to have the set length size; (2) cutting the single crystal silicon rod of which the tail is removed to be a sheet with the set thickness; and (3) peeling the edge skin of the cut sheet to obtain a final product. The seed crystal of the large-size single crystal has large area and few splicing parts, thus better facilitating ingot casting of the large-size single crystal. According to the production process of the seed crystal of the large-size single crystal, more seed crystal products can be manufactured in single crystal silicon rods with the same lengths, the same diameters and the same sizes; and the circle area of the whole single crystal silicon rod is used to the maximum extent, so that the utilization rate is greatly improved, and the production cost is reduced.

Description

A kind of large size class single crystal seed and production technique thereof

Technical field

The present invention relates to a kind of large size class single crystal seed and production technique thereof.

Background technology

Tradition type single crystal seed receives the made in the market 156*156 of the being of a size of square of restriction of cutting technique at present, and is as shown in Figure 1, and its main drawback is very few for the silicon single crystal rod usable floor area in the cutting production process, causes cost higher.Its limitation of size is mainly and limited by production unit line evolution machine, can only cut out the seed crystal of this maximum 156*156 size.

At present the little seed crystal of 156*156 such as the seed crystal that need are spliced into final finished 780*780 need 25 of splicings and since during splicing splicing improper gap excessive; Polycrystal raw material is liquid after melting in class monocrystalline ingot casting process simultaneously; Liquid will flow into through the seed crystal slit, because that the monolithic seed crystal receives the buoyancy of liquid influence more easily is floating, influence final type monocrystalline Cheng Jing; Because several times of large size seed crystal monolithics are to the weight of 156*156, buoyancy almost can be ignored to its influence.Large size seed crystal combination only needs the several areas that can reach 780*780 in addition, has lacked near half thely than small size seed crystal combination slit, and the potential influence that receives buoyancy significantly reduces.

Summary of the invention

The object of the invention is to provide a kind of silicon single crystal rod utilization ratio high to the defective of prior art, big large size class single crystal seed and the production technique thereof of cutting seed size.

The present invention adopts following technical scheme for realizing above-mentioned purpose:

A kind of large size class single crystal seed is characterized in that: a kind of large size class single crystal seed is characterized in that: its length is 700-1200mm, and thickness is 5-30mm, and width is 50-400mm.

A kind of production technique of large size class single crystal seed comprises the steps:

(1) with the major diameter single crystal silicon rod tail of decaptitating, cuts into the preseting length size;

(2) will the decaptitate silicon single crystal rod of tail vertically cuts into the thin slice of setting thickness;

(3) with the thin slice trimming skin of well cutting, obtain final finished.

Large size class single crystal seed area of the present invention is big, and splicing quantity is few, the ingot casting of type of being more conducive to monocrystalline.Large size class single crystal seed technology of the present invention can be made more seed crystal product in the silicon single crystal rod of equal length and diameter; Because of the use of its maximum range the area of a circle of whole silicon single crystal rod make utilization ratio improve greatly, also make production cost obtain reduction.

Description of drawings

Fig. 1 is prior art cutting synoptic diagram, and dotted line is a line of cut among the figure;

Fig. 2 is complete processing cutting synoptic diagram of the present invention, and dotted line is a line of cut among the figure.

Fig. 3 is a seed crystal synoptic diagram of the present invention.

Embodiment

A kind of large size class single crystal seed as shown in Figure 3, a kind of large size class single crystal seed is characterized in that: its length is 700-1200mm, and thickness is 5-30mm, and width is 50-400mm.

The production technique of a kind of large size class single crystal seed as shown in Figure 2 comprises the steps:

(1) with the major diameter single crystal silicon rod tail of decaptitating, cuts into the preseting length size;

(2) will the decaptitate silicon single crystal rod of tail vertically cuts into the thin slice of setting thickness;

(3) with the thin slice trimming skin of well cutting, obtain final finished.

With 8 cun silicon single crystal rod diameter 200mm for example, length cutting 780mm, its maximum product can be made 780*196, head and shoulders above the 156*156 product under the stack pile situation.

Claims (2)

1. large size class single crystal seed, it is characterized in that: a kind of large size class single crystal seed is characterized in that: its length is 700-1200mm, and thickness is 5-30mm, and width is 50-400mm.

2. the production technique of a large size class single crystal seed comprises the steps:

(1) with the major diameter single crystal silicon rod tail of decaptitating, cuts into the preseting length size;

(2) will the decaptitate silicon single crystal rod of tail vertically cuts into the thin slice of setting thickness;

(3) with the thin slice trimming skin of well cutting, obtain final finished.

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