CN103696004A - Mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique - Google Patents
Mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique Download PDFInfo
- Publication number
- CN103696004A CN103696004A CN201410006762.2A CN201410006762A CN103696004A CN 103696004 A CN103696004 A CN 103696004A CN 201410006762 A CN201410006762 A CN 201410006762A CN 103696004 A CN103696004 A CN 103696004A
- Authority
- CN
- China
- Prior art keywords
- tabular
- molybdenum sheet
- wedge tip
- tabular molybdenum
- platy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique, which belongs to the sapphire crystal growing device. The mold is characterized by being composed of at least two platy molybdenum plates A arranged in the middle of the mold, and a platy molybdenum plate B and a platy molybdenum plate C respectively arranged at two sides of the two platy molybdenum plates A; interval-like growth gaps are respectively located between the platy molybdenum plates A, between the platy molybdenum plates A and the platy molybdenum plate B, and between the platy molybdenum plates A and the platy molybdenum plate C; shoulders at two sides of the upper part of each one of the platy molybdenum plates A, B and C are provided with equal 90-degree chamfers, and two sides of the lower part of each one of the platy molybdenum plates A, B and C are provided with same convex legs. Trial result shows that the structure is more rational, two shoulders at two sides of the upper part of each molybdenum plate are provided with 90-degree chamfers, and the edges of two sides close to temperature field in furnace are kept off, so that growth striations, even cracks, having influence on quality and caused by greater temperature gradient, are reduced, and quality of crystal growth is improved; moreover, yield is increased and cost is saved while quality is guaranteed.
Description
Technical field: the present invention relates to crystal growing apparatus, particularly a kind of for the guided mode method slim tabular sapphire mould of multi-disc of growing simultaneously.
Background technology: sapphire has high rigidity, high temperature resistant, corrosion-resistant, see through the dielectric properties that spectral range is wide, transmitance is high, good.Because sapphire growth temperature is up to 2050 ℃, cause that large, the warm field variable of monocrystal growing furnace power is many, non-cutting time is long, production cost is too high.It is fast that guided mode rule has crystalline growth velocity, and size can accurately be controlled, and save material, time and the energy, thereby improved economic benefit, be one of the most promising sapphire growth method.Guided mode method is produced the innovative design that sapphire core technology is mould, mould directly affects the Quality and yield of product, prior art document 1ZL201320125762.5 discloses a kind of tabular mould for guided mode method growing sapphire, " it is characterized in that described tabular mould is by the tabular molybdenum sheet of A being placed in the middle of mould; and the tabular molybdenum sheet of B and the tabular molybdenum sheet of C that are placed in respectively the tabular molybdenum sheet of A both sides combine; between the tabular molybdenum sheet of described B, the tabular molybdenum sheet of C and the tabular molybdenum sheet of A, there is gap-like growth and stitch, and two ends, bottom all have pin.Its technique effect is: owing to being designed with two growth seams, can grow two boards shape sapphire crystal simultaneously.”
The tabular mould for guided mode method growing sapphire of prior art document 1, there are the following problems in actual use and deficiency: every molybdenum sheet both sides of the tabular mould 1, being combined by three molybdenum sheets approach the edge of temperature field in furnace, thermograde is larger, affected the quality of tabular sapphire crystal both sides edge part, cause edge part stress excessive, often there is affecting the growth line of quality, even cracking; 2, when for the production of 3 millimeters of thickness and following slim tabular sapphire, under the condition that melt total amount allows in stove, expend same electric energy and growth time, in its process of growth, still can only grow 2 tabular sapphire crystals simultaneously, seem yield poorly, big energy-consuming, cost be high.
Summary of the invention: the object of the invention is to overcome the deficiencies in the prior art, study and design a kind of structure more reasonable, not only improved the quality of crystal growth, and improved production efficiency, reduced cost for the guided mode method slim tabular sapphire mould of growing sapphire multi-disc simultaneously.
The present invention seeks to be achieved through the following technical solutions: a kind of for the guided mode method slim tabular sapphire mould of multi-disc of growing simultaneously, it is characterized in that by being placed in the middle tabular molybdenum sheet of at least 2 A of mould, and the tabular molybdenum sheet of B and the tabular molybdenum sheet of C that are placed in respectively the tabular molybdenum sheet of A both sides combine, the tabular molybdenum sheet of described A each other and and the tabular molybdenum sheet of B, the tabular molybdenum sheet of C between there is gap-like growth seam, A, B, both sides, C tabular molybdenum sheet top shoulder are all designed with 90 ° of equal chamferings, and A, B, both sides, C tabular molybdenum sheet bottom are all designed with identical protruding pin.
The tabular molybdenum sheet of described B, the tabular molybdenum sheet of C upper end are all wedge tip, and the edge that the tabular molybdenum sheet of B, C tabular molybdenum sheet lower end and the tabular molybdenum sheet of A lower end are harmonious all has chamfering except pin.The chamfering of described A, B, the tabular molybdenum sheet of C is harmonious and locates the material guide port for gap-like growth seam.The technique effect of above-mentioned design is: the edge that tabular molybdenum sheet lower end is harmonious all has chamfering except pin, thereby forms the material guide port of gap-like growth seam, when being placed in the crystal pulling raw material of molten state, is convenient to crystal material along the upwards growth of gap-like growth seam.
The place that is harmonious between the wedge tip of place, the tabular molybdenum sheet of A and the wedge tip of the tabular molybdenum sheet of another A is harmonious between the wedge tip of the tabular molybdenum sheet of described B and the wedge tip of the tabular molybdenum sheet of A, between the wedge tip of the tabular molybdenum sheet of A and the wedge tip of the tabular molybdenum sheet of C, the place of being harmonious is the slim tabular sapphire growth mouthful of multi-disc, and the top of the wedge tip of the tabular molybdenum sheet of B, the top of the wedge tip of the tabular molybdenum sheet of A, the top of the wedge tip of the tabular molybdenum sheet of C all equates with respect to the height of protruding foot plate surface.Distance between the top of the wedge tip of the tabular molybdenum sheet of described B and the wedge tip of the tabular molybdenum sheet of A, distance between the top of the wedge tip of the wedge tip of the tabular molybdenum sheet of A and the tabular molybdenum sheet of another A, the distance between the top between the wedge tip of the tabular molybdenum sheet of another A and the wedge tip of the tabular molybdenum sheet of C is equal to the slim tabular sapphire thickness of the multi-disc growing.The technique effect of above-mentioned design is: the design of the wedge tip of the both sides of discharge port, not only controlled the slim tabular sapphire thickness of multi-disc, and guaranteed that the temperature field between wedge tip is even, make the tabular sapphire growing there will not be growth line, the stable sapphire quality that improved.
The invention process obtain for the guided mode method slim tabular sapphire mould of multi-disc of growing simultaneously, through on probation, compared with prior art shown following beneficial effect:
1, structure is more reasonable, has improved the quality of crystal growth.In technical solution of the present invention, tabular mould is four or five molybdenum sheets combine and both sides, all molybdenum sheets top shoulder is all designed with 90 ° of equal chamferings, compare with the tabular mould of prior art document 1,90 ° of chamferings of both sides, every molybdenum sheet top shoulder, avoided the edge that both sides approach temperature field in furnace, reduced because thermograde is compared with the growth line that affects quality occurring greatly, even ftracture, obviously improved the quality of tabular sapphire crystal.
When 2, ensuring the quality of products, increase output, saved cost.In technical solution of the present invention, the wedge tip of the slim tabular sapphire growth of multi-disc mouthful both sides, has guaranteed that the temperature field between wedge tip is even, and the tabular sapphire that practical probation result proof grows there will not be growth line; When ensuring the quality of products, owing to being designed with at least 3 growth seams, the at least 3 slim tabular sapphires of can simultaneously growing, only need to increase the quantity of the tabular molybdenum sheet of A, the how slim tabular sapphire of just simultaneously growing, compare with the mould that can only grow 2 tabular sapphire prior aries 1, must increase output, saved cost.
Accompanying drawing explanation: Fig. 1 is the top perspective schematic diagram that meets thematic structure of the present invention; Fig. 2 is the present invention's 3 slim tabular sapphire mould embodiment schematic side view of simultaneously growing; The 4 slim tabular sapphire mould embodiment schematic side view of simultaneously growing in Fig. 3 the present invention.
Embodiment: further illustrating the present invention below in conjunction with concrete diagram, wherein, is the 3 slim tabular sapphire mould embodiment that simultaneously grow in conjunction with Fig. 2; In conjunction with Fig. 3, be the 4 slim tabular sapphire mould embodiment that simultaneously grow:
As shown in Figure 1, 2, 3, a kind of for the guided mode method slim tabular sapphire mould of multi-disc of growing simultaneously, it is characterized in that by being placed in the middle tabular molybdenum sheet 1 of at least 2 A of mould, and the tabular molybdenum sheet 2 of B and the tabular molybdenum sheet 3 of C that are placed in respectively the tabular molybdenum sheet of A both sides combine, the tabular molybdenum sheet of described A each other and and the tabular molybdenum sheet of B, the tabular molybdenum sheet of C between there is gap- like growth seam 6,4,5, A, B, both sides, C tabular molybdenum sheet top shoulder are all designed with 90 ° of equal chamferings 7, and A, B, both sides, C tabular molybdenum sheet bottom are all designed with identical protruding pin 8.
As shown in Figure 2,3, wide two portions that the tabular molybdenum sheet 1 of described every A is wedge tip 11,12 by upper end form, and the edge that the A of described wide two portions lower end and adjacent side, B, the tabular molybdenum sheet of C lower end are harmonious all has chamfering 13,14 except protruding pin 8 parts.
As shown in Figure 2,3, the tabular molybdenum sheet 2 of described B, the tabular molybdenum sheet of C 3 upper ends are all wedge tip 21,31, and the edge that the tabular molybdenum sheet 2 of B, C tabular molybdenum sheet 3 lower ends and the tabular molybdenum sheet of A 1 lower end are harmonious all has chamfering 22,32 except protruding pin 8 parts.
As shown in Figure 2,3,4,6,5 material guide port stitches for gap-like growth in the chamfering 13,14,22,32 of described A, B, the tabular molybdenum sheet of the C place that is harmonious.
As Fig. 2, shown in 3, place is harmonious between the wedge tip 21 of the tabular molybdenum sheet of described B and the wedge tip 11 of the tabular molybdenum sheet of A, place is harmonious between the wedge tip 11 of the wedge tip 12 of the tabular molybdenum sheet of A and the tabular molybdenum sheet of another A, between the wedge tip 12 of the tabular molybdenum sheet of A and the wedge tip 31 of the tabular molybdenum sheet of C, be harmonious place for gap- like growth seam 4, 6, 5 the slim tabular sapphire growth mouthful of multi-disc, and the top of the wedge tip 21 of the tabular molybdenum sheet of B, the wedge tip 11 of the tabular molybdenum sheet of A, 12 top, the top of the wedge tip 31 of the tabular molybdenum sheet of C all equates with respect to the height of protruding pin 8 bottom surfaces.
As shown in Figure 2,3, distance between the top of the wedge tip 21 of the tabular molybdenum sheet of described B and the wedge tip 11 of the tabular molybdenum sheet of A, distance between the top of the wedge tip 11 of the wedge tip 12 of the tabular molybdenum sheet of A and the tabular molybdenum sheet of another A, the distance between the top between the wedge tip 12 of the tabular molybdenum sheet of another A and the wedge tip 31 of the tabular molybdenum sheet of C is equal to the thickness of the slim platelike crystal of multi-disc growing.
Obviously; only need to increase the sheet number of the tabular molybdenum sheet of A; just may increase and grow the more slim tabular sapphire of multi-disc number simultaneously; to those skilled in the art; after understanding innovation of the present invention; need not pay creative work and just can realize, therefore, be obviously drop on protection scope of the present invention within.
Claims (6)
1. one kind for the guided mode method slim tabular sapphire mould of multi-disc of growing simultaneously, it is characterized in that by being placed in the middle tabular molybdenum sheet of at least 2 A (1) of mould, and the tabular molybdenum sheet of B (2) and the tabular molybdenum sheet of C (3) that are placed in respectively the tabular molybdenum sheet of A both sides combine, the tabular molybdenum sheet of described A each other and and the tabular molybdenum sheet of B, the tabular molybdenum sheet of C between there are gap-like growth seam (6), (4), (5), A, B, both sides, C tabular molybdenum sheet top shoulder are all designed with equal 90 ° of chamferings (7), and A, B, both sides, C tabular molybdenum sheet bottom are all designed with identical protruding pin (8).
2. according to claim 1 for the guided mode method slim tabular sapphire mould of multi-disc of growing simultaneously, it is characterized in that wide two portions that the tabular molybdenum sheet of described every A (1) is wedge tip (11), (12) by upper end form, the edge that the A of described wide two portions lower end and adjacent side, B, the tabular molybdenum sheet of C lower end are harmonious all has chamfering (13), (14) except protruding pin (8) part.
3. according to claim 1 for the guided mode method slim tabular sapphire mould of multi-disc of growing simultaneously, it is characterized in that the tabular molybdenum sheet of described B (2), the tabular molybdenum sheet of C (3) upper end are all wedge tip (21), (31), the edge that the tabular molybdenum sheet of B (2), the tabular molybdenum sheet of C (3) lower end and the tabular molybdenum sheet of A (1) lower end are harmonious all has chamfering (22), (32) except protruding pin (8) part.
According to described in claim 2 or 3 for the guided mode method slim tabular sapphire mould of multi-disc of growing simultaneously, the material guide port of (4), (6), (5) stitches for gap-like growth in the place that is harmonious, chamfering (13), (14), (22), (32) that it is characterized in that described A, B, the tabular molybdenum sheet of C.
According to described in claim 2 or 3 for the guided mode method slim tabular sapphire mould of multi-disc of growing simultaneously, place is characterized in that being harmonious between the wedge tip (21) of the tabular molybdenum sheet of described B and the wedge tip (11) of the tabular molybdenum sheet of A, place is harmonious between the wedge tip (12) of the tabular molybdenum sheet of A and the wedge tip (11) of the tabular molybdenum sheet of another A, between the wedge tip (12) of the tabular molybdenum sheet of A and the wedge tip (31) of the tabular molybdenum sheet of C, be harmonious place for gap-like growth seam (4), (6), (5) the slim tabular sapphire growth mouthful of multi-disc, and the top of the wedge tip (21) of the tabular molybdenum sheet of B, the wedge tip (11) of the tabular molybdenum sheet of A, (12) top, the top of the wedge tip (31) of the tabular molybdenum sheet of C all equates with respect to the height of protruding pin (8) bottom surface.
According to described in claim 2 or 3 for the guided mode method slim tabular sapphire mould of multi-disc of growing simultaneously, it is characterized in that the distance between the wedge tip (21) of the tabular molybdenum sheet of described B and the top of the wedge tip (11) of the tabular molybdenum sheet of A, distance between the top of the wedge tip (12) of the tabular molybdenum sheet of A and the wedge tip (11) of the tabular molybdenum sheet of another A, the distance between the top between the wedge tip (12) of another tabular molybdenum sheet and the wedge tip (31) of the tabular molybdenum sheet of C is equal to the thickness of the slim platelike crystal of multi-disc growing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410006762.2A CN103696004A (en) | 2014-01-07 | 2014-01-07 | Mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410006762.2A CN103696004A (en) | 2014-01-07 | 2014-01-07 | Mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103696004A true CN103696004A (en) | 2014-04-02 |
Family
ID=50357661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410006762.2A Pending CN103696004A (en) | 2014-01-07 | 2014-01-07 | Mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103696004A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702478A (en) * | 2017-02-21 | 2017-05-24 | 洛阳金诺光电子材料有限公司 | Mold guiding plate for growing sapphire crystals by virtue of EFG method |
| CN106702481A (en) * | 2017-03-20 | 2017-05-24 | 宁夏佳晶科技有限公司 | Improved multi-flake guide-die artificial sapphire preparation technology |
| CN108411367A (en) * | 2018-03-06 | 2018-08-17 | 同济大学 | Flow atmosphere EFG technique multi-disc sapphire crystallization device and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560630A (en) * | 2012-01-12 | 2012-07-11 | 徐州协鑫光电科技有限公司 | Thermal field capable of allowing synchronous growth of a plurality of crystals with edge-defined film-fed crystal growth technique and method thereof |
| CN202482487U (en) * | 2012-01-18 | 2012-10-10 | 鸿福晶体科技(安徽)有限公司 | Crystal multi-die growth device through adopting EFG (edge-defined, film-fed growth) method |
| CN103114329A (en) * | 2013-03-20 | 2013-05-22 | 镇江和和蓝晶科技有限公司 | Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method |
-
2014
- 2014-01-07 CN CN201410006762.2A patent/CN103696004A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560630A (en) * | 2012-01-12 | 2012-07-11 | 徐州协鑫光电科技有限公司 | Thermal field capable of allowing synchronous growth of a plurality of crystals with edge-defined film-fed crystal growth technique and method thereof |
| CN202482487U (en) * | 2012-01-18 | 2012-10-10 | 鸿福晶体科技(安徽)有限公司 | Crystal multi-die growth device through adopting EFG (edge-defined, film-fed growth) method |
| CN103114329A (en) * | 2013-03-20 | 2013-05-22 | 镇江和和蓝晶科技有限公司 | Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702478A (en) * | 2017-02-21 | 2017-05-24 | 洛阳金诺光电子材料有限公司 | Mold guiding plate for growing sapphire crystals by virtue of EFG method |
| CN106702481A (en) * | 2017-03-20 | 2017-05-24 | 宁夏佳晶科技有限公司 | Improved multi-flake guide-die artificial sapphire preparation technology |
| CN106702481B (en) * | 2017-03-20 | 2019-01-29 | 宁夏佳晶科技有限公司 | A kind of improved multiple-piece EFG technique synthetic sapphire preparation process |
| CN108411367A (en) * | 2018-03-06 | 2018-08-17 | 同济大学 | Flow atmosphere EFG technique multi-disc sapphire crystallization device and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103114329A (en) | Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method | |
| CN101775641B (en) | Follow-up heat insulation ring thermal field structure for vertical oriented growth of polysilicon | |
| CN103696004A (en) | Mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique | |
| CN103952754A (en) | Monocrystal-like silicon ingot preparation method and methods for preparing monocrystal-like silicon wafers by cutting monocrystal-like silicon ingot | |
| CN102758243A (en) | Seed crystal of large-size single crystal and production process thereof | |
| CN202482487U (en) | Crystal multi-die growth device through adopting EFG (edge-defined, film-fed growth) method | |
| CN102828231A (en) | Methods for manufacturing Mono-like ingot and seed crystal of Mono-like ingot | |
| CN103726104A (en) | Mold for growing two thick plate-shaped sapphires by edge-defined film-fed crystal growth method (EFG) | |
| CN205329210U (en) | Polysilicon ingoting furnace | |
| CN203393257U (en) | Ingot furnace with plurality of heat-conduction bottom plates for producing efficient polycrystalline silicon ingot | |
| CN204325548U (en) | A kind of sapphire furnace side insulation construction | |
| CN203947183U (en) | For the guided mode method slim tabular sapphire mould of multi-disc of growing simultaneously | |
| CN103696005A (en) | Mold for simultaneous growth of multiple sapphire tubes through edge-defined film-fed growth technique | |
| CN203820922U (en) | Practical mold for growing wide and thick lamellarcrystals with EFG (edge-defined film-fed growth) technique | |
| CN202808987U (en) | Large-sized single crystal seed | |
| CN203602749U (en) | Heating coil for drawing six-inch zone-molten silicon single crystal | |
| CN203128689U (en) | Plate-type mold for growing sapphire through edge-defined film-fed method | |
| CN202610386U (en) | Sapphire crystal growing device using Kyropoulos method | |
| CN203498506U (en) | Workpiece basket for cleaning leftover materials | |
| CN202688507U (en) | Upper-lower spliced polycrystalline graphite crucible | |
| CN203653760U (en) | Die for growing large-diameter tubular sapphire by using edge-defined film-fed growth method | |
| CN202936511U (en) | Adjustable warm-keeping system for sapphire crystal growth | |
| CN202576643U (en) | Die used for growing hemispherical sapphire by EFG (Edge-defined Film-fed crystal Growth) method | |
| CN201850332U (en) | Single crystal growth temperature field for gemstone | |
| CN207079301U (en) | Polycrystalline silicon ingot casting and ingot single crystal crucible |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140402 |
|
| WD01 | Invention patent application deemed withdrawn after publication |