CN103114329A - Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method - Google Patents
Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method Download PDFInfo
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- CN103114329A CN103114329A CN2013100882731A CN201310088273A CN103114329A CN 103114329 A CN103114329 A CN 103114329A CN 2013100882731 A CN2013100882731 A CN 2013100882731A CN 201310088273 A CN201310088273 A CN 201310088273A CN 103114329 A CN103114329 A CN 103114329A
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Abstract
A plate mold for growing sapphire by an EFG (edge-defined film-fed crystal growth) method belongs to a sapphire crystal growing device. The plate mold consists of a plate molybdenum piece A arranged in the middle of the mold, and a plate molybdenum piece B and a plate molybdenum piece C which are respectively arranged at two sides of the plate molybdenum piece A, wherein two ends of each lower part of the plate molybdenum pieces A, B, C are provided with pins; gap type growing seams are arranged among the plate molybdenum pieces; the plate molybdenum piece A is formed by misplacing two parts in equal width and the displacing distances at two sides are equal; the upper ends of the two parts in equal width of the plate molybdenum piece A are wedge sharp ends, while the edges connected with the plate molybdenum piece B and the plate molybdenum piece C at two sides except the pins, at the lower ends of the two parts in equal width of the plate molybdenum piece A are provided with chamfers. By practice, the plate mold for growing sapphire by the EFG (edge-defined film-fed crystal growth) method disclosed by the invention is reasonable in structure, convenient in operation and in observation of growth situation, and has the advantages of growing two plate sapphire crystals without the growth striations at the same time, increasing the output and saving the cost when the quality is ensured.
Description
Technical field
The present invention relates to crystal growing apparatus, particularly a kind of tabular mould for guided mode method growing sapphire.
Background technology
Sapphire has high rigidity, and is high temperature resistant, corrosion-resistant, see through the dielectric properties that spectral range is wide, transmitance is high, good.Sapphire is widely used in a series of high-tech sectors such as national defence, military affairs, scientific research with its good performance, also has simultaneously very widely to use on civilian industry.
Up to 2050 ℃, cause that monocrystal growing furnace power is large, warm field variable is many, non-cutting time is long due to the sapphire growth temperature, cause production cost too high.It is fast that the guided mode rule has crystalline growth velocity, and size can accurately be controlled, and save material, time and the energy, thereby increase economic efficiency, be one of the most promising sapphire growth method.
It is mould that the guided mode method is produced its core of sapphire, and mould directly affects the Quality and yield of product, and traditional crystal pulling mainly draws monolithic as main take single mode.The existing tabular sapphire single mode of guided mode method growth that is used for draws the single-piece molded lamps structure unreasonable, and single mode draws that monolithic sapphire crystal unit output is low, power consumption is large, cost is high, and time limit of service is short.
This shows, study and design a kind of rational in infrastructure, easy to operate, and improved production efficiency, the tabular mould that is used for guided mode method growing sapphire that reduced cost is necessary.
Summary of the invention: the objective of the invention is to overcome the deficiencies in the prior art, study and design a kind of rational in infrastructure, easy to operate, and improved production efficiency, reduced the tabular mould that is used for guided mode method growing sapphire of cost.
The present invention seeks to be achieved through the following technical solutions:
A kind of tabular mould for guided mode method growing sapphire, it is characterized in that described tabular mould is by being placed in the middle tabular molybdenum sheet of A of mould, and the tabular molybdenum sheet of B and the tabular molybdenum sheet of C that are placed in respectively the tabular molybdenum sheet of A both sides combine, have gap-like growth seam between the tabular molybdenum sheet of described B, the tabular molybdenum sheet of C and the tabular molybdenum sheet of A, and the two ends, bottom all has pin.Its technique effect is: owing to being designed with two growth seams, can grow simultaneously two boards shape sapphire crystal.
The tabular molybdenum sheet of described A is formed by the dislocation of wide two portions, and both sides dislocation distance equates, described wide two portions upper ends is the wedge tip, and the edge that the tabular molybdenum sheet of the B of lower end and both sides, the tabular molybdenum sheet of C are harmonious all has chamfering except pin.Its technique effect is: because the tabular molybdenum sheet of A is formed by wide two portions dislocation, and the growing state of two sapphire crystals before and after can observing simultaneously; The edge that the lower end is harmonious all has chamfering when being placed in the crystal pulling raw material of molten state except pin, be convenient to the crystal material along the upwards growth of gap-like growth seam.
The tabular molybdenum sheet of described B, the tabular molybdenum sheet of C upper end all is the wedge tip, and the edge that the tabular molybdenum sheet of B, C tabular molybdenum sheet lower end and the tabular molybdenum sheet of A are harmonious all has chamfering except pin; The chamfer material guide port that the place stitches for gap-like growth that is harmonious under chamfer and the tabular molybdenum sheet of A under the tabular molybdenum sheet of described B, the tabular molybdenum sheet of C.The technique effect of above-mentioned design is: the edge that tabular molybdenum sheet lower end is harmonious all has chamfering except pin, thereby forms the material guide port of gap-like growth seam, when being placed in the crystal pulling raw material of molten state, is convenient to the crystal material along the upwards growth of gap-like growth seam.
The wedge tip of the wedge tip of the tabular molybdenum sheet of described B, the tabular molybdenum sheet of C upper end and the tabular molybdenum sheet of the A upper end discharge port that stitch for the gap-like growth at the place that is harmonious, and the top of 2 wedge tips of the top of the wedge tip of the tabular molybdenum sheet of B, the tabular molybdenum sheet of C upper end and the tabular molybdenum sheet of A upper end is all on same level; The platelike crystal thickness that distance between the top of 2 wedge tips of the top of the wedge tip of the tabular molybdenum sheet of described B, the tabular molybdenum sheet of C upper end and the tabular molybdenum sheet of A upper end equals to grow.The technique effect of above-mentioned design is: the design of the wedge tip of the both sides of discharge port, guaranteed that warm between the wedge tip is even, and make the tabular sapphire that grows the line of growing can not occur.
The tabular mould that is used for guided mode method growing sapphire that the invention process obtains through on probation, has compared with prior art shown following beneficial effect:
1, rational in infrastructure, convenient operation.In technical solution of the present invention, tabular mould is that three molybdenum sheets combine, and draws the prior art mould of monolithic to compare with single mode, has increased mold integral thickness and intensity, causes die life to be extended; The tabular molybdenum sheet of A is made and can be observed simultaneously two tabular sapphire crystal pulling processes on same direction by wide two portions dislocation design, has facilitated operation to control quality.
Increase output when 2, ensuring the quality of products, saved cost.The wedge tip of two discharge port both sides in technical solution of the present invention, guaranteed between the wedge tip temperature evenly, the tabular sapphire that practical probation result proof grows the line of growing can not occur; When ensuring the quality of products, owing to being designed with two growth seams, can grow simultaneously two boards shape sapphire crystal, draw the prior art mould of monolithic to compare with single mode, must increase output, saved cost.
Description of drawings
Fig. 1 is top perspective schematic diagram of the present invention; Fig. 2 is schematic side view of the present invention; Fig. 3 is schematic top plan view of the present invention; Fig. 4 is that the present invention looks up schematic perspective view.
Embodiment
For technique means, creation characteristic that the present invention is realized, reach purpose and effect and understand and understand, further illustrate the present invention below in conjunction with concrete diagram:
As shown in Fig. 1,2,3,4, a kind of tabular mould for guided mode method growing sapphire, it is characterized in that described tabular mould is by being placed in the middle tabular molybdenum sheet 1 of A of mould, and the tabular molybdenum sheet 2 of B and the tabular molybdenum sheet 3 of C that are placed in respectively the tabular molybdenum sheet of A 1 both sides combine, have gap- like growth seam 4,5 between the tabular molybdenum sheet of described B, the tabular molybdenum sheet of C and the tabular molybdenum sheet of A, and the two ends, bottom all has pin.
As shown in Fig. 2,3,4, described tabular mould, it is characterized in that the tabular molybdenum sheet 1 of described A is formed by wide two portions dislocation, and both sides dislocation distance equates, described wide two portions upper end is wedge tip 11,12, and the edge that the tabular molybdenum sheet 2 of the B of lower end and both sides, the tabular molybdenum sheet 3 of C are harmonious all has chamfering 13,14 except pin.
As shown in Fig. 2,3,4, described tabular mould, it is characterized in that the tabular molybdenum sheet 2 of described B, the tabular molybdenum sheet of C 3 upper ends all are wedge tip 21,31, the edge that the tabular molybdenum sheet 2 of B, C tabular molybdenum sheet 3 lower ends and the tabular molybdenum sheet 1 of A are harmonious all has chamfering 22,32 except pin.
As shown in Fig. 2,4, described tabular mould, it is characterized in that the tabular molybdenum sheet 2 of described B, 3 times chamfers 22 of the tabular molybdenum sheet of C, 32 and 1 time chamfer 13 of the tabular molybdenum sheet of A, 14 place that is harmonious stitch 4,5 material guide port for the gap-like growth.
As shown in Fig. 2,4, described tabular mould, it is characterized in that the tabular molybdenum sheet 2 of described B, the tabular molybdenum sheet of C 3 upper ends are wedge tip and the tabular molybdenum sheet of A 1 upper end and are the wedge tip place that is harmonious and stitch 4,5 discharge port for the gap-like growth, and the tabular molybdenum sheet 2 of B, the tabular molybdenum sheet of C 3 upper ends are wedge tip 21,31 top and the tabular molybdenum sheet of A 1 upper end and are wedge tip 11,12 top on same level.
As shown in Fig. 2,4, described tabular mould is characterized in that the platelike crystal thickness that the distance between the top of the top of described wedge tip 11 and wedge tip 21 equals to grow.
As shown in Fig. 2,4, described tabular mould is characterized in that the platelike crystal thickness that the distance between the top of the top of described wedge tip 12 and wedge tip 31 equals to grow.
Above demonstration and described principal character of the present invention and advantage of the present invention.The technician of the industry should understand, and the present invention is not comprised the restriction of the foregoing description of embodiment; Without departing from the spirit and scope of the present invention, the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention; The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (7)
1. tabular mould that is used for guided mode method growing sapphire, it is characterized in that described tabular mould is by being placed in the middle tabular molybdenum sheet of A (1) of mould, and the tabular molybdenum sheet of B (2) and the tabular molybdenum sheet of C (3) that are placed in respectively the tabular molybdenum sheet of A both sides combine, have the gap-like growth between the tabular molybdenum sheet of described B, the tabular molybdenum sheet of C and the tabular molybdenum sheet of A and stitch (4), (5), and the two ends, bottom all have pin.
2. tabular mould according to claim 1, it is characterized in that the tabular molybdenum sheet of described A (1) is formed by wide two portions dislocation, and both sides dislocation distance equates, described wide two portions upper end is wedge tip (11), (12), and the edge that the tabular molybdenum sheet of the B of lower end and both sides (2), the tabular molybdenum sheet of C (3) are harmonious all has chamfering (13), (14) except pin.
3. tabular mould according to claim 1, it is characterized in that the tabular molybdenum sheet of described B (2), the tabular molybdenum sheet of C (3) upper end all is wedge tip (21), (31), the edge that the tabular molybdenum sheet of B (2), the tabular molybdenum sheet of C (3) lower end and the tabular molybdenum sheet of A (1) are harmonious all has chamfering (22), (32) except pin.
4. tabular mould according to claim 1 is characterized in that the tabular molybdenum sheet of described B (2), the lower chamfer (22) of the tabular molybdenum sheet of C (3), (32) and the lower chamfer (13) of the tabular molybdenum sheet of A (1), (14) place that is harmonious stitches the material guide port of (4), (5) for the gap-like growth.
5. tabular mould according to claim 1, the discharge port of (4), (5) stitches for the gap-like growth in the wedge tip that it is characterized in that the wedge tip of the tabular molybdenum sheet of described B (2), the tabular molybdenum sheet of C (3) upper end and the tabular molybdenum sheet of A (1) the upper end place that is harmonious, and the top of 2 wedge tips (11) of the top of the wedge tip (21) of the tabular molybdenum sheet of B (2), the tabular molybdenum sheet of C (3) upper end, (31) and the tabular molybdenum sheet of A (1) upper end, (12) is all on same level.
6. tabular mould according to claim 1 is characterized in that the platelike crystal thickness that the distance between the top of the top of described wedge tip (11) and wedge tip (21) equals to grow.
7. tabular mould according to claim 1 is characterized in that the platelike crystal thickness that the distance between the top of the top of described wedge tip (12) and wedge tip (31) equals to grow.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100882731A CN103114329A (en) | 2013-03-20 | 2013-03-20 | Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013100882731A CN103114329A (en) | 2013-03-20 | 2013-03-20 | Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method |
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| CN103114329A true CN103114329A (en) | 2013-05-22 |
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| CN2013100882731A Pending CN103114329A (en) | 2013-03-20 | 2013-03-20 | Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103696005A (en) * | 2014-01-07 | 2014-04-02 | 镇江和和蓝晶科技有限公司 | Mold for simultaneous growth of multiple sapphire tubes through edge-defined film-fed growth technique |
| CN103696004A (en) * | 2014-01-07 | 2014-04-02 | 镇江和和蓝晶科技有限公司 | Mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique |
| CN103710753A (en) * | 2014-01-07 | 2014-04-09 | 镇江和和蓝晶科技有限公司 | Die for synchronously growing multiple thick-rod sapphires with edge-defined film-fed growth process |
| CN103726104A (en) * | 2014-01-07 | 2014-04-16 | 镇江和和蓝晶科技有限公司 | Mold for growing two thick plate-shaped sapphires by edge-defined film-fed crystal growth method (EFG) |
| CN106702478A (en) * | 2017-02-21 | 2017-05-24 | 洛阳金诺光电子材料有限公司 | Mold guiding plate for growing sapphire crystals by virtue of EFG method |
| CN106702480A (en) * | 2017-02-21 | 2017-05-24 | 洛阳金诺光电子材料有限公司 | Film guide plate for growing sapphire wafer according to edge-defined film-fed growth (EFG) method |
| CN110983433A (en) * | 2019-11-28 | 2020-04-10 | 中国科学院包头稀土研发中心 | Process for producing rare earth eutectic fluorophor by guide mode method |
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| CN101899705A (en) * | 2010-07-23 | 2010-12-01 | 无锡金岩光电晶体科技有限公司 | Guide die structure for growing extra-thick monocrystal alumina wafer |
| CN202482487U (en) * | 2012-01-18 | 2012-10-10 | 鸿福晶体科技(安徽)有限公司 | Crystal multi-die growth device through adopting EFG (edge-defined, film-fed growth) method |
| CN203128689U (en) * | 2013-03-20 | 2013-08-14 | 镇江和和蓝晶科技有限公司 | Plate-type mold for growing sapphire through edge-defined film-fed method |
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2013
- 2013-03-20 CN CN2013100882731A patent/CN103114329A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101899705A (en) * | 2010-07-23 | 2010-12-01 | 无锡金岩光电晶体科技有限公司 | Guide die structure for growing extra-thick monocrystal alumina wafer |
| CN202482487U (en) * | 2012-01-18 | 2012-10-10 | 鸿福晶体科技(安徽)有限公司 | Crystal multi-die growth device through adopting EFG (edge-defined, film-fed growth) method |
| CN203128689U (en) * | 2013-03-20 | 2013-08-14 | 镇江和和蓝晶科技有限公司 | Plate-type mold for growing sapphire through edge-defined film-fed method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103696005A (en) * | 2014-01-07 | 2014-04-02 | 镇江和和蓝晶科技有限公司 | Mold for simultaneous growth of multiple sapphire tubes through edge-defined film-fed growth technique |
| CN103696004A (en) * | 2014-01-07 | 2014-04-02 | 镇江和和蓝晶科技有限公司 | Mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique |
| CN103710753A (en) * | 2014-01-07 | 2014-04-09 | 镇江和和蓝晶科技有限公司 | Die for synchronously growing multiple thick-rod sapphires with edge-defined film-fed growth process |
| CN103726104A (en) * | 2014-01-07 | 2014-04-16 | 镇江和和蓝晶科技有限公司 | Mold for growing two thick plate-shaped sapphires by edge-defined film-fed crystal growth method (EFG) |
| CN106702478A (en) * | 2017-02-21 | 2017-05-24 | 洛阳金诺光电子材料有限公司 | Mold guiding plate for growing sapphire crystals by virtue of EFG method |
| CN106702480A (en) * | 2017-02-21 | 2017-05-24 | 洛阳金诺光电子材料有限公司 | Film guide plate for growing sapphire wafer according to edge-defined film-fed growth (EFG) method |
| CN110983433A (en) * | 2019-11-28 | 2020-04-10 | 中国科学院包头稀土研发中心 | Process for producing rare earth eutectic fluorophor by guide mode method |
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Application publication date: 20130522 |