CN106702478A - Mold guiding plate for growing sapphire crystals by virtue of EFG method - Google Patents
Mold guiding plate for growing sapphire crystals by virtue of EFG method Download PDFInfo
- Publication number
- CN106702478A CN106702478A CN201710092100.5A CN201710092100A CN106702478A CN 106702478 A CN106702478 A CN 106702478A CN 201710092100 A CN201710092100 A CN 201710092100A CN 106702478 A CN106702478 A CN 106702478A
- Authority
- CN
- China
- Prior art keywords
- guided mode
- guiding plate
- growing sapphire
- plate
- mold guiding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 52
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 30
- 239000010980 sapphire Substances 0.000 title claims abstract description 30
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 title abstract description 22
- 238000000034 method Methods 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 235000019994 cava Nutrition 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000010431 corundum Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a mold guiding plate for growing sapphire crystals by virtue of an EFG method. A V-shaped groove (3) which is sunken downward is formed in the discharge end of a mold guiding plate main body, and sunken surfaces (2) which are sunken inward are separately formed in two side faces of the mold guiding plate, so that a structure, the middle part of which is thin and the two ends of which are thick, is formed in the mold guiding plate. According to the mold guiding plate provided by the invention, the processed thermal filed environment is improved, and the processing temperature is lowered, so that the two sides and the middle position are located on a same isothermal line. Compared with the prior art, the drawing speed is accelerated, the production efficiency is improved, and meanwhile, the local temperature of the mold guiding plate is changed, so that crystallization of crystals is facilitated, the problem of shrinking crystals is solved, the intactness of the crystals is ensured, and meanwhile, the local widths of the two ends of the mold guiding plate are further increased, the problem that the width of the crystals is decreased as the temperature is increased, the operation of drawing the crystals is facilitated, the control and adjustment range and the like is increased, and the mold guiding plate is suitable for large-scaled popularization and application.
Description
【Technical field】
The present invention relates to a kind of guided mode plate, and in particular to a kind of guided mode plate of use EFG technique growing sapphire crystal.
【Background technology】
Known, sapphire (Sapphire) is a kind of aluminum oxide (α A1203) monocrystalline, be also called corundum.Corundum crystal
With excellent optics, electrical and mechanical performance, its hardness is only second to diamond.It is steady with high mechanical strength, high temeperature chemistry performance
Calmly, the features such as good thermal conductivity, high-insulativity, small coefficient of friction.Sapphire is widely used in semiconductor devices, photoelectron device
Part, laser, vacuum device, precision optical machinery etc..Particularly contain Ti4+Sapphire, is excellent solid wide-band tuning laser material,
Superpower femtosecond magnitude tunable laser can be made.High-quality gem crystal it is artificial synthesized be people research important neck
Domain.
It is artificial prepare sapphire crystal material at present oneself have a variety of methods, mainly have:Kyropoulos（Kyropolous, letter
Claim Ky methods), EFG technique (i.e. Edge Defined Film-fed Growth techniques, abbreviation EFG methods), heat
Exchange process (i.e. Heat Exchange Method, abbreviation HEM are stained with), czochralski method（Czochralski), Bridgman method
CBridgman), Bridgman-Stockbarger method etc..By taking EFG methods as an example, manufacture method approximately as：Alumina raw material is loaded into tungsten earthenware
In crucible, heating melting is put into specific guided mode plate inside crucible, and guided mode plate is provided with hole or the groove of proper width.Due to oxidation
There is wellability between aluminium and guided mode plate, therefore under capillary action, solution can rise to guided mode plate top, and lead die head
Form thin film.
During using EFG method growing sapphire chips, one of its core is exactly guided mode plate, guided mode plate directly affect product quality and
Yield.It is wide guided mode plate that guided mode plate is more common at present, is raised as the drawing stabilization of crystal is lasting in thermal field, more by
In with the requirement of the thickness and length for using it is increasing, it is more obvious the drawbacks of wide EFG method crystal guided mode plates：Example
Such as：
A, wide structure is used due to guided mode plate, is not easy feed temperature is high at the heater for the outward flange of guided mode plate, led
Cause brilliant plate contracting angle；
B, due to guided mode plate use wide structure, as the drawing of brilliant plate is more and more long, the guided mode plate temperature near heater is got over
Come higher, cause drawn crystal width inconsistent；
C, due to guided mode plate use wide structure, temperature outside it is high after for ensure crystal thickness requirement need to reduce draw rate, make
Into production efficiency reduction
In consideration of it, now realizing the lasting shaping of thick crystalline substance plate in the urgent need to designing a kind of new tabular guided mode plate, drawing it
During the form of expression it is consistent, convenient and reliable operation etc..
【The content of the invention】
In view of it is not enough present in background technology, the invention discloses a kind of guided mode of use EFG technique growing sapphire crystal
Plate, the present invention makes to lead in the middle part of main template body formation by being respectively equipped with the concave face for caving inward in the two sides for leading main template body
The thick structure in thin two ends, the present invention changes guided mode plate local temperature, beneficial to crystal structure, solves the problems, such as crystal contracting angle,
Ensure perfection of crystal, while also add the part width of guided mode plate two ends, solve and increase crystal width with temperature
The problem for narrowing, operation when being drawn beneficial to crystal increases control adjusting range etc..
In order to realize the purpose of foregoing invention, the present invention is adopted the following technical scheme that：
A kind of guided mode plate of use EFG technique growing sapphire crystal, including the first side plate, concave face, bulk supply seam and the second side
Plate, first side plate is parallel with the second side plate and interval setting constitutes rectangle and leads main template body, the first side plate and the second side
Gap between plate constitutes bulk supply seam, and the V-shaped groove to lower recess is provided with the discharge end for leading main template body, is leading main template body
Two sides be respectively equipped with the concave face for caving inward and make to lead main template body and form the thick structure in the thin two ends in middle part, in guided mode plate master
The feed end of body is provided with the guided mode plate that link slot forms described use EFG technique growing sapphire crystal.
The guided mode plate of described use EFG technique growing sapphire crystal, the middle part of the concave face is plane, concave face
Two ends be inclined-plane.
The guided mode plate of described use EFG technique growing sapphire crystal, the length on the inclined-plane is 1~30mm.
The guided mode plate of described use EFG technique growing sapphire crystal, the depression for leading the setting of main template body two sides
The angle on face inclined-plane is 0.1 °~50 °.
The guided mode plate of described use EFG technique growing sapphire crystal, the boundary of plane and inclined-plane on the concave face
Place is provided with excessive circular.
The guided mode plate of described use EFG technique growing sapphire crystal, the width of the bulk supply seam is 0.1~3mm.
The guided mode plate of described use EFG technique growing sapphire crystal, the angle on the V-shaped groove both sides is 70 °~
150°。
Due to using above-mentioned technical proposal, the present invention to have the advantages that：
A kind of guided mode plate of use EFG technique growing sapphire crystal of the present invention, the present invention is by leading main template body
Discharge end is provided with the V-shaped groove to lower recess, and being respectively equipped with the concave face that caves inward in the two sides for leading main template body makes guided mode
Plate main body forms the thick structure in the thin two ends in middle part, present invention improves possessing thermal field environment, reduces and possesses temperature, make both sides with
Centre position is on same thermoisopleth, than preceding lifting draw rate, improve production efficiency, while changing guided mode plate office
Portion's temperature, beneficial to crystal structure, solves the problems, such as crystal contracting angle, it is ensured that perfection of crystal, while also add guided mode plate
The part width of two ends, solves the problems, such as that increasing crystal width with temperature narrows, operation when being drawn beneficial to crystal, increase
Control adjusting range etc., is adapted to large-scale promotion and application.
【Brief description of the drawings】
Fig. 1 is dimensional structure diagram of the invention；
Fig. 2 is the overlooking the structure diagram of Fig. 1；
Fig. 3 is the left view structural representation of Fig. 1；
In figure：1st, the first side plate；2nd, concave face；3rd, V-shaped groove；4th, bulk supply seam；5th, the second side plate；6th, excessive circular；7th, even
Access slot.
【Specific embodiment】
With reference to the following examples, the present invention can be explained in greater detail；But, the invention is not limited in these embodiments.
It should be noted that the location expression relation used in the present invention（That is up, down, left, right, before and after）Only with accompanying drawing
As a example by.
A kind of guided mode plate of the use EFG technique growing sapphire crystal with reference to described in accompanying drawing 1~3, including the first side plate 1,
Concave face 2, bulk supply seam 4 and the second side plate 5, the shape of the side plate 5 of first side plate 1 and second are rectangle structure, the
Side plate 1 is disposed as consistent with the length of the second side plate 5, width with thickness, and the first side plate 1 is parallel, corresponding with the second side plate 5
And interval setting constitutes rectangle and leads main template body, the gap between the first side plate 1 and the second side plate 5 constitutes bulk supply seam 4, institute
The width b for stating bulk supply seam 4 is set to 0.1~3mm, in actual application, is set between the first side plate 1 and the second side plate 5
Several spacer blocks are put, then the first side plate 1 is bolted with the second side plate 5 and is integrated（Do not show in this Structure Figure
Go out）;
Further, any one in the middle of the material selection tungsten or molybdenum or tungsten-molybdenum alloy of the first side plate 1 and the second side plate 5；
Further, it is provided with the V-shaped groove 3 to lower recess in the discharge end for leading main template body（As shown in Figure 3）, the both sides of the V-shaped groove 3
Angle β be 70 °~150 °, in actual implementation process, V-shaped groove 3 setting i.e. the first side plate 1 upper end set on the left of
The low inclined-plane A in right side high, the low right side inclined-plane B high on the left of the upper end of the second side plate 5 is set, by the inclined-plane A and inclined-plane B structures
Forming V-shape groove 3；
Further, being respectively equipped with the concave face 2 that caves inward in the two sides for leading main template body makes to lead in the middle part of main template body formed
The thick structure in thin two ends（It is specific as shown in Figure 2）, the middle part of the concave face 2 is plane, and the two ends of concave face 2 are inclined-plane；Institute
The length a for stating inclined-plane is set to 1~30mm.The angle theta for leading the inclined-plane of concave face 2 of main template body two sides setting is set to 0.1 °
~50 °；
Further, the plane on concave face 2 is provided with excessive circular 6 with the intersection on inclined-plane；
Further, link slot 7 is provided with the feed end for leading main template body, the guided mode plate connected by the link slot 7 in crucible is consolidated
Reservation（This Structure Figure is not shown）The guided mode plate of the use EFG technique growing sapphire crystal described in formation.
Particularly advantage of the invention is as follows：
1st, present invention improves possessing thermal field environment, reduce and possess temperature, guided mode plate both sides is in centre position same
On bar thermoisopleth, than preceding lifting draw rate, improve production efficiency；
2nd, the present invention change guided mode plate local temperature, beneficial to crystal structure, solve the problems, such as crystal contracting angle, it is ensured that crystal it is complete
Property；
3rd, invention increases the part width of guided mode plate two ends, solve the problems, such as that increasing crystal width with temperature narrows,
Operation when being drawn beneficial to crystal, increases control adjusting range etc..
Application example of the invention is as shown in the table：
| θ values | a | b | β | Crystal contracting angle situation |
| 5° | 3 | 0.3 | 70° | Thickness direction contracting angle trend weakens, but still the contracting angle for having 2~3mm draws and adjusts interval narrow simultaneously |
| 12° | 8 | 0.4 | 100° | There is the V-arrangement contracting angle of 1m or so in thickness direction, draw the interval relative narrower of adjustment |
| 20° | 15 | 0.5 | 120° | Warm High-temperature Bottom exists without contracting angle phenomenon, draws adjustment interval wide |
| 30° | 20 | 0.6 | 150° | There is the V-arrangement contracting angle of 2m or so in thickness direction, draw the interval relative narrower of adjustment |
Part not in the detailed description of the invention is prior art.
The embodiment selected herein to disclose goal of the invention of the invention, is presently considered to be suitable, but,
It is to be understood that it is contemplated that all changes for belonging to the embodiment in this design and invention scope including all and improvement.
Claims (7)
1. a kind of guided mode plate of use EFG technique growing sapphire crystal, including the first side plate（1）, concave face（2）, bulk supply seam
（4）With the second side plate（5）, it is characterized in that：First side plate（1）With the second side plate（5）Parallel and interval setting constitutes rectangular
Shape leads main template body, the first side plate（1）With the second side plate（5）Between gap constitute bulk supply seam（4）, leading main template body
Discharge end is provided with the V-shaped groove to lower recess（3）, the concave face for caving inward is respectively equipped with the two sides for leading main template body（2）
Make to lead the structure that main template body forms the thin two ends thickness in middle part, link slot is provided with the feed end for leading main template body（7）Form described
Use EFG technique growing sapphire crystal guided mode plate.
2. as claimed in claim 1 using the guided mode plate of EFG technique growing sapphire crystal, it is characterized in that：The concave face
（2）Middle part be plane, concave face（2）Two ends be inclined-plane.
3. as claimed in claim 2 using the guided mode plate of EFG technique growing sapphire crystal, it is characterized in that：The length on the inclined-plane
It is 1~30mm to spend.
4. as claimed in claim 2 using the guided mode plate of EFG technique growing sapphire crystal, it is characterized in that：Lead main template body two
The concave face that side is set（2）The angle on inclined-plane is 0.1 °~50 °.
5. as claimed in claim 2 using the guided mode plate of EFG technique growing sapphire crystal, it is characterized in that：The concave face
（2）On the intersection on plane and inclined-plane be provided with excessive circular（6）.
6. as claimed in claim 1 using the guided mode plate of EFG technique growing sapphire crystal, it is characterized in that：The bulk supply seam
（4）Width be 0.1~3mm.
7. as claimed in claim 1 using the guided mode plate of EFG technique growing sapphire crystal, it is characterized in that：The V-shaped groove（3）
The angle on both sides is 70 °~150 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710092100.5A CN106702478A (en) | 2017-02-21 | 2017-02-21 | Mold guiding plate for growing sapphire crystals by virtue of EFG method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710092100.5A CN106702478A (en) | 2017-02-21 | 2017-02-21 | Mold guiding plate for growing sapphire crystals by virtue of EFG method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106702478A true CN106702478A (en) | 2017-05-24 |
Family
ID=58917099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710092100.5A Pending CN106702478A (en) | 2017-02-21 | 2017-02-21 | Mold guiding plate for growing sapphire crystals by virtue of EFG method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106702478A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101760783A (en) * | 2009-09-25 | 2010-06-30 | 上海元亮光电科技有限公司 | Crucible cover plate capable of adjusting temperature gradient of solid-liquid interface |
| CN103114329A (en) * | 2013-03-20 | 2013-05-22 | 镇江和和蓝晶科技有限公司 | Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method |
| CN103696004A (en) * | 2014-01-07 | 2014-04-02 | 镇江和和蓝晶科技有限公司 | Mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique |
| CN203820922U (en) * | 2014-05-14 | 2014-09-10 | 江苏苏博瑞光电设备科技有限公司 | Practical mold for growing wide and thick lamellarcrystals with EFG (edge-defined film-fed growth) technique |
| JP5923700B1 (en) * | 2015-11-30 | 2016-05-25 | 並木精密宝石株式会社 | Large EFG method growth furnace lid structure |
| CN206494985U (en) * | 2017-02-21 | 2017-09-15 | 洛阳金诺光电子材料有限公司 | A kind of guided mode plate of use EFG technique growing sapphire crystal |
-
2017
- 2017-02-21 CN CN201710092100.5A patent/CN106702478A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101760783A (en) * | 2009-09-25 | 2010-06-30 | 上海元亮光电科技有限公司 | Crucible cover plate capable of adjusting temperature gradient of solid-liquid interface |
| CN103114329A (en) * | 2013-03-20 | 2013-05-22 | 镇江和和蓝晶科技有限公司 | Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method |
| CN103696004A (en) * | 2014-01-07 | 2014-04-02 | 镇江和和蓝晶科技有限公司 | Mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique |
| CN203820922U (en) * | 2014-05-14 | 2014-09-10 | 江苏苏博瑞光电设备科技有限公司 | Practical mold for growing wide and thick lamellarcrystals with EFG (edge-defined film-fed growth) technique |
| JP5923700B1 (en) * | 2015-11-30 | 2016-05-25 | 並木精密宝石株式会社 | Large EFG method growth furnace lid structure |
| CN206494985U (en) * | 2017-02-21 | 2017-09-15 | 洛阳金诺光电子材料有限公司 | A kind of guided mode plate of use EFG technique growing sapphire crystal |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170524 |
|
| RJ01 | Rejection of invention patent application after publication |