CN106702478A - Mold guiding plate for growing sapphire crystals by virtue of EFG method - Google Patents

Mold guiding plate for growing sapphire crystals by virtue of EFG method Download PDF

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Publication number
CN106702478A
CN106702478A CN201710092100.5A CN201710092100A CN106702478A CN 106702478 A CN106702478 A CN 106702478A CN 201710092100 A CN201710092100 A CN 201710092100A CN 106702478 A CN106702478 A CN 106702478A
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CN
China
Prior art keywords
guided mode
guiding plate
growing sapphire
plate
mold guiding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710092100.5A
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Chinese (zh)
Inventor
刘朝轩
刘奇丰
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Luoyang Jinnuo Optoelectronic Materials Co Ltd
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Luoyang Jinnuo Optoelectronic Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Luoyang Jinnuo Optoelectronic Materials Co Ltd filed Critical Luoyang Jinnuo Optoelectronic Materials Co Ltd
Priority to CN201710092100.5A priority Critical patent/CN106702478A/en
Publication of CN106702478A publication Critical patent/CN106702478A/en
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34Edge-defined film-fed crystal-growth using dies or slits
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/20Aluminium oxides

Abstract

The invention relates to a mold guiding plate for growing sapphire crystals by virtue of an EFG method. A V-shaped groove (3) which is sunken downward is formed in the discharge end of a mold guiding plate main body, and sunken surfaces (2) which are sunken inward are separately formed in two side faces of the mold guiding plate, so that a structure, the middle part of which is thin and the two ends of which are thick, is formed in the mold guiding plate. According to the mold guiding plate provided by the invention, the processed thermal filed environment is improved, and the processing temperature is lowered, so that the two sides and the middle position are located on a same isothermal line. Compared with the prior art, the drawing speed is accelerated, the production efficiency is improved, and meanwhile, the local temperature of the mold guiding plate is changed, so that crystallization of crystals is facilitated, the problem of shrinking crystals is solved, the intactness of the crystals is ensured, and meanwhile, the local widths of the two ends of the mold guiding plate are further increased, the problem that the width of the crystals is decreased as the temperature is increased, the operation of drawing the crystals is facilitated, the control and adjustment range and the like is increased, and the mold guiding plate is suitable for large-scaled popularization and application.

Description

A kind of guided mode plate of use EFG technique growing sapphire crystal
【Technical field】
The present invention relates to a kind of guided mode plate, and in particular to a kind of guided mode plate of use EFG technique growing sapphire crystal.
【Background technology】
Known, sapphire (Sapphire) is a kind of aluminum oxide (α A1203) monocrystalline, be also called corundum.Corundum crystal With excellent optics, electrical and mechanical performance, its hardness is only second to diamond.It is steady with high mechanical strength, high temeperature chemistry performance Calmly, the features such as good thermal conductivity, high-insulativity, small coefficient of friction.Sapphire is widely used in semiconductor devices, photoelectron device Part, laser, vacuum device, precision optical machinery etc..Particularly contain Ti4+Sapphire, is excellent solid wide-band tuning laser material, Superpower femtosecond magnitude tunable laser can be made.High-quality gem crystal it is artificial synthesized be people research important neck Domain.
It is artificial prepare sapphire crystal material at present oneself have a variety of methods, mainly have:Kyropoulos(Kyropolous, letter Claim Ky methods), EFG technique (i.e. Edge Defined Film-fed Growth techniques, abbreviation EFG methods), heat Exchange process (i.e. Heat Exchange Method, abbreviation HEM are stained with), czochralski method(Czochralski), Bridgman method CBridgman), Bridgman-Stockbarger method etc..By taking EFG methods as an example, manufacture method approximately as:Alumina raw material is loaded into tungsten earthenware In crucible, heating melting is put into specific guided mode plate inside crucible, and guided mode plate is provided with hole or the groove of proper width.Due to oxidation There is wellability between aluminium and guided mode plate, therefore under capillary action, solution can rise to guided mode plate top, and lead die head Form thin film.
During using EFG method growing sapphire chips, one of its core is exactly guided mode plate, guided mode plate directly affect product quality and Yield.It is wide guided mode plate that guided mode plate is more common at present, is raised as the drawing stabilization of crystal is lasting in thermal field, more by In with the requirement of the thickness and length for using it is increasing, it is more obvious the drawbacks of wide EFG method crystal guided mode plates:Example Such as:
A, wide structure is used due to guided mode plate, is not easy feed temperature is high at the heater for the outward flange of guided mode plate, led Cause brilliant plate contracting angle;
B, due to guided mode plate use wide structure, as the drawing of brilliant plate is more and more long, the guided mode plate temperature near heater is got over Come higher, cause drawn crystal width inconsistent;
C, due to guided mode plate use wide structure, temperature outside it is high after for ensure crystal thickness requirement need to reduce draw rate, make Into production efficiency reduction
In consideration of it, now realizing the lasting shaping of thick crystalline substance plate in the urgent need to designing a kind of new tabular guided mode plate, drawing it During the form of expression it is consistent, convenient and reliable operation etc..
【The content of the invention】
In view of it is not enough present in background technology, the invention discloses a kind of guided mode of use EFG technique growing sapphire crystal Plate, the present invention makes to lead in the middle part of main template body formation by being respectively equipped with the concave face for caving inward in the two sides for leading main template body The thick structure in thin two ends, the present invention changes guided mode plate local temperature, beneficial to crystal structure, solves the problems, such as crystal contracting angle, Ensure perfection of crystal, while also add the part width of guided mode plate two ends, solve and increase crystal width with temperature The problem for narrowing, operation when being drawn beneficial to crystal increases control adjusting range etc..
In order to realize the purpose of foregoing invention, the present invention is adopted the following technical scheme that:
A kind of guided mode plate of use EFG technique growing sapphire crystal, including the first side plate, concave face, bulk supply seam and the second side Plate, first side plate is parallel with the second side plate and interval setting constitutes rectangle and leads main template body, the first side plate and the second side Gap between plate constitutes bulk supply seam, and the V-shaped groove to lower recess is provided with the discharge end for leading main template body, is leading main template body Two sides be respectively equipped with the concave face for caving inward and make to lead main template body and form the thick structure in the thin two ends in middle part, in guided mode plate master The feed end of body is provided with the guided mode plate that link slot forms described use EFG technique growing sapphire crystal.
The guided mode plate of described use EFG technique growing sapphire crystal, the middle part of the concave face is plane, concave face Two ends be inclined-plane.
The guided mode plate of described use EFG technique growing sapphire crystal, the length on the inclined-plane is 1~30mm.
The guided mode plate of described use EFG technique growing sapphire crystal, the depression for leading the setting of main template body two sides The angle on face inclined-plane is 0.1 °~50 °.
The guided mode plate of described use EFG technique growing sapphire crystal, the boundary of plane and inclined-plane on the concave face Place is provided with excessive circular.
The guided mode plate of described use EFG technique growing sapphire crystal, the width of the bulk supply seam is 0.1~3mm.
The guided mode plate of described use EFG technique growing sapphire crystal, the angle on the V-shaped groove both sides is 70 °~ 150°。
Due to using above-mentioned technical proposal, the present invention to have the advantages that:
A kind of guided mode plate of use EFG technique growing sapphire crystal of the present invention, the present invention is by leading main template body Discharge end is provided with the V-shaped groove to lower recess, and being respectively equipped with the concave face that caves inward in the two sides for leading main template body makes guided mode Plate main body forms the thick structure in the thin two ends in middle part, present invention improves possessing thermal field environment, reduces and possesses temperature, make both sides with Centre position is on same thermoisopleth, than preceding lifting draw rate, improve production efficiency, while changing guided mode plate office Portion's temperature, beneficial to crystal structure, solves the problems, such as crystal contracting angle, it is ensured that perfection of crystal, while also add guided mode plate The part width of two ends, solves the problems, such as that increasing crystal width with temperature narrows, operation when being drawn beneficial to crystal, increase Control adjusting range etc., is adapted to large-scale promotion and application.
【Brief description of the drawings】
Fig. 1 is dimensional structure diagram of the invention;
Fig. 2 is the overlooking the structure diagram of Fig. 1;
Fig. 3 is the left view structural representation of Fig. 1;
In figure:1st, the first side plate;2nd, concave face;3rd, V-shaped groove;4th, bulk supply seam;5th, the second side plate;6th, excessive circular;7th, even Access slot.
【Specific embodiment】
With reference to the following examples, the present invention can be explained in greater detail;But, the invention is not limited in these embodiments.
It should be noted that the location expression relation used in the present invention(That is up, down, left, right, before and after)Only with accompanying drawing As a example by.
A kind of guided mode plate of the use EFG technique growing sapphire crystal with reference to described in accompanying drawing 1~3, including the first side plate 1, Concave face 2, bulk supply seam 4 and the second side plate 5, the shape of the side plate 5 of first side plate 1 and second are rectangle structure, the Side plate 1 is disposed as consistent with the length of the second side plate 5, width with thickness, and the first side plate 1 is parallel, corresponding with the second side plate 5 And interval setting constitutes rectangle and leads main template body, the gap between the first side plate 1 and the second side plate 5 constitutes bulk supply seam 4, institute The width b for stating bulk supply seam 4 is set to 0.1~3mm, in actual application, is set between the first side plate 1 and the second side plate 5 Several spacer blocks are put, then the first side plate 1 is bolted with the second side plate 5 and is integrated(Do not show in this Structure Figure Go out);
Further, any one in the middle of the material selection tungsten or molybdenum or tungsten-molybdenum alloy of the first side plate 1 and the second side plate 5;
Further, it is provided with the V-shaped groove 3 to lower recess in the discharge end for leading main template body(As shown in Figure 3), the both sides of the V-shaped groove 3 Angle β be 70 °~150 °, in actual implementation process, V-shaped groove 3 setting i.e. the first side plate 1 upper end set on the left of The low inclined-plane A in right side high, the low right side inclined-plane B high on the left of the upper end of the second side plate 5 is set, by the inclined-plane A and inclined-plane B structures Forming V-shape groove 3;
Further, being respectively equipped with the concave face 2 that caves inward in the two sides for leading main template body makes to lead in the middle part of main template body formed The thick structure in thin two ends(It is specific as shown in Figure 2), the middle part of the concave face 2 is plane, and the two ends of concave face 2 are inclined-plane;Institute The length a for stating inclined-plane is set to 1~30mm.The angle theta for leading the inclined-plane of concave face 2 of main template body two sides setting is set to 0.1 ° ~50 °;
Further, the plane on concave face 2 is provided with excessive circular 6 with the intersection on inclined-plane;
Further, link slot 7 is provided with the feed end for leading main template body, the guided mode plate connected by the link slot 7 in crucible is consolidated Reservation(This Structure Figure is not shown)The guided mode plate of the use EFG technique growing sapphire crystal described in formation.
Particularly advantage of the invention is as follows:
1st, present invention improves possessing thermal field environment, reduce and possess temperature, guided mode plate both sides is in centre position same On bar thermoisopleth, than preceding lifting draw rate, improve production efficiency;
2nd, the present invention change guided mode plate local temperature, beneficial to crystal structure, solve the problems, such as crystal contracting angle, it is ensured that crystal it is complete Property;
3rd, invention increases the part width of guided mode plate two ends, solve the problems, such as that increasing crystal width with temperature narrows, Operation when being drawn beneficial to crystal, increases control adjusting range etc..
Application example of the invention is as shown in the table:
θ values a b β Crystal contracting angle situation
3 0.3 70° Thickness direction contracting angle trend weakens, but still the contracting angle for having 2~3mm draws and adjusts interval narrow simultaneously
12° 8 0.4 100° There is the V-arrangement contracting angle of 1m or so in thickness direction, draw the interval relative narrower of adjustment
20° 15 0.5 120° Warm High-temperature Bottom exists without contracting angle phenomenon, draws adjustment interval wide
30° 20 0.6 150° There is the V-arrangement contracting angle of 2m or so in thickness direction, draw the interval relative narrower of adjustment
Part not in the detailed description of the invention is prior art.
The embodiment selected herein to disclose goal of the invention of the invention, is presently considered to be suitable, but, It is to be understood that it is contemplated that all changes for belonging to the embodiment in this design and invention scope including all and improvement.

Claims (7)

1. a kind of guided mode plate of use EFG technique growing sapphire crystal, including the first side plate(1), concave face(2), bulk supply seam (4)With the second side plate(5), it is characterized in that:First side plate(1)With the second side plate(5)Parallel and interval setting constitutes rectangular Shape leads main template body, the first side plate(1)With the second side plate(5)Between gap constitute bulk supply seam(4), leading main template body Discharge end is provided with the V-shaped groove to lower recess(3), the concave face for caving inward is respectively equipped with the two sides for leading main template body(2) Make to lead the structure that main template body forms the thin two ends thickness in middle part, link slot is provided with the feed end for leading main template body(7)Form described Use EFG technique growing sapphire crystal guided mode plate.
2. as claimed in claim 1 using the guided mode plate of EFG technique growing sapphire crystal, it is characterized in that:The concave face (2)Middle part be plane, concave face(2)Two ends be inclined-plane.
3. as claimed in claim 2 using the guided mode plate of EFG technique growing sapphire crystal, it is characterized in that:The length on the inclined-plane It is 1~30mm to spend.
4. as claimed in claim 2 using the guided mode plate of EFG technique growing sapphire crystal, it is characterized in that:Lead main template body two The concave face that side is set(2)The angle on inclined-plane is 0.1 °~50 °.
5. as claimed in claim 2 using the guided mode plate of EFG technique growing sapphire crystal, it is characterized in that:The concave face (2)On the intersection on plane and inclined-plane be provided with excessive circular(6).
6. as claimed in claim 1 using the guided mode plate of EFG technique growing sapphire crystal, it is characterized in that:The bulk supply seam (4)Width be 0.1~3mm.
7. as claimed in claim 1 using the guided mode plate of EFG technique growing sapphire crystal, it is characterized in that:The V-shaped groove(3) The angle on both sides is 70 °~150 °.
CN201710092100.5A 2017-02-21 2017-02-21 Mold guiding plate for growing sapphire crystals by virtue of EFG method Pending CN106702478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710092100.5A CN106702478A (en) 2017-02-21 2017-02-21 Mold guiding plate for growing sapphire crystals by virtue of EFG method

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Application Number Priority Date Filing Date Title
CN201710092100.5A CN106702478A (en) 2017-02-21 2017-02-21 Mold guiding plate for growing sapphire crystals by virtue of EFG method

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101760783A (en) * 2009-09-25 2010-06-30 上海元亮光电科技有限公司 Crucible cover plate capable of adjusting temperature gradient of solid-liquid interface
CN103114329A (en) * 2013-03-20 2013-05-22 镇江和和蓝晶科技有限公司 Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method
CN103696004A (en) * 2014-01-07 2014-04-02 镇江和和蓝晶科技有限公司 Mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique
CN203820922U (en) * 2014-05-14 2014-09-10 江苏苏博瑞光电设备科技有限公司 Practical mold for growing wide and thick lamellarcrystals with EFG (edge-defined film-fed growth) technique
JP5923700B1 (en) * 2015-11-30 2016-05-25 並木精密宝石株式会社 Large EFG method growth furnace lid structure
CN206494985U (en) * 2017-02-21 2017-09-15 洛阳金诺光电子材料有限公司 A kind of guided mode plate of use EFG technique growing sapphire crystal

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101760783A (en) * 2009-09-25 2010-06-30 上海元亮光电科技有限公司 Crucible cover plate capable of adjusting temperature gradient of solid-liquid interface
CN103114329A (en) * 2013-03-20 2013-05-22 镇江和和蓝晶科技有限公司 Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method
CN103696004A (en) * 2014-01-07 2014-04-02 镇江和和蓝晶科技有限公司 Mold for simultaneously growing multiple thin platy sapphires by edge-defined film-fed growth technique
CN203820922U (en) * 2014-05-14 2014-09-10 江苏苏博瑞光电设备科技有限公司 Practical mold for growing wide and thick lamellarcrystals with EFG (edge-defined film-fed growth) technique
JP5923700B1 (en) * 2015-11-30 2016-05-25 並木精密宝石株式会社 Large EFG method growth furnace lid structure
CN206494985U (en) * 2017-02-21 2017-09-15 洛阳金诺光电子材料有限公司 A kind of guided mode plate of use EFG technique growing sapphire crystal

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