CN205062231U - Steep hot reflection configuration in thermal field upper portion of growth sapphire crystal of thinking of a way - Google Patents
Steep hot reflection configuration in thermal field upper portion of growth sapphire crystal of thinking of a way Download PDFInfo
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- CN205062231U CN205062231U CN201520648160.7U CN201520648160U CN205062231U CN 205062231 U CN205062231 U CN 205062231U CN 201520648160 U CN201520648160 U CN 201520648160U CN 205062231 U CN205062231 U CN 205062231U
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Abstract
The utility model relates to a steep hot reflection configuration in thermal field upper portion of growth sapphire crystal of thinking of a way, the hot reflection configuration's in upper portion radiation thermovent is non - rotational symmetry structure, just non - rotational symmetry structure opening be a kind in 90 degrees " T " fonts of counter -clockwise turning or " L " shape or the non - rotational symmetry contained angle structure, the contained angle of non - rotational symmetry contained angle structure is 70 - 80 degrees angles. The utility model has the advantages of: the utility model discloses steep hot reflection configuration in thermal field upper portion of growth sapphire crystal of thinking of a way's radiation thermovent is non - rotational symmetry structure to vertical temperature gradient when improving crystal growth, and then change the camber at solid -liquid growth interface promotes the miscellaneous effect with the exhaust bubble of the row of crystal.
Description
Technical field
The utility model belongs to technical field of crystal growth, particularly a kind of thermal field top heat reflection structure of kyropoulos growing sapphire crystal.
Background technology
Sapphirely consist of aluminum oxide (Al
2o
3), be combined into covalent linkage pattern by three Sauerstoffatoms and two aluminium atoms, its crystalline structure is hexagonal lattice structure.Due to sapphire there is the high velocity of sound, high temperature resistant, anticorrosive, high rigidity, high light transmittance, fusing point are high features such as (2045 ° of C), be therefore often used as the material of sealed cell.Current super brightness is white/and the quality of blue-ray LED depends on the material quality of epitaxial layer of gallium nitride (GaN), and the sapphire substrate surface processing quality of epitaxial layer of gallium nitride quality then with used is closely bound up.Due to sapphire (monocrystalline Al
2o
3) lattice constant mismatch rate between c face and III-V and II-VI race's deposit film is little, meet resistant to elevated temperatures requirement in GaN epitaxy processing procedure simultaneously, make sapphire wafer become the critical material making white/indigo plant/green light LED.
The growth method of sapphire crystal material is existing a variety of at present, mainly contain: kyropoulos (i.e. Kyropolos method, be called for short KY method), EFG technique (i.e. edgedefinedfilm-fedgrowthtechniques method, be called for short EFG method), heat-exchanging method (i.e. heatexchangemethod method, be called for short HEM method), crystal pulling method (i.e. Czochralski, be called for short Cz method), Bridgman method (i.e. Bridgman method, or falling crucible method) etc.
Kyropoulos, also known as the long crystallization of kelvin (Kyropoulosmethod), is called for short KY method.The thermal field structure of KY method equipment mainly comprises: crucible, well heater, support bar, top heat reflection structure, bottom heat reflection structure and sidepiece heat reflection structure, above all with tungsten or Mo processing, wherein crucible is used for holding crystal raw material, well heater provides heat, and upper and lower, side heat reflection structure grows brilliant suitable axial, radial gradient for being incubated and providing.Further, top heat reflection structure distance melt liquid level is comparatively near, and structure includes seed crystal decline passway, is again realize crucible top to keep off thermal-radiating key part simultaneously, has a direct impact melt center radiation heat radiation during seeding and the longitudinal gradient of melt.At present, kyropoulos crystal growing process, be designed to the top heat reflection structure central opening of symmetrical structure, when making seeding, temperature gradient of solid-liquid interface is at all directions uniformity, there is following problem in this kind of structure: during crystal growth, longitudinal temperature gradient is not obvious, thus affect the curvature of solid-liquid growth interface and promote the impurities removal of crystal and the effect of exhaust bubble.
Utility model content
The technical problems to be solved in the utility model is to provide a kind of thermal field top heat reflection structure of kyropoulos growing sapphire crystal of longitudinal temperature gradient when can improve crystal growth.
For solving the problems of the technologies described above, the technical solution of the utility model is: a kind of thermal field top heat reflection structure of kyropoulos growing sapphire crystal, and its innovative point is: the heat loss through radiation mouth of described top heat reflection structure is rotation asymmetry structural openings.
Further, described rotation asymmetry structural openings is rotated counterclockwise 90 degree of " T " fonts.
Further, described rotation asymmetry structural openings is " L " shape.
Further, described rotation asymmetry structural openings is rotation asymmetry angle structure.
Further, the angle of described rotation asymmetry angle structure is 70-80 degree angles.
The utility model has the advantage of:
(1) object of employing rotation asymmetry structure is the temperature distribution in order to change seeding position, makes it be asymmetric thermograde, thus changes the curvature of solid-liquid growth interface, makes interface structure be asymmetry;
(2) opening rotation asymmetry structure can adopt " T " font being rotated counterclockwise 90 degree, under this opening, makes the thermograde in horizontal right direction be 6-10K/mm; Like this, at a suitable temperature, when seed crystal and melt contacts, seed crystal preferentially grows to horizontal right direction, coordinates transient rise and given angle rotation process, and slowly upwards lifts, and makes extraction section helically to increase growth;
(3) opening rotation asymmetry structure also can adopt " L " shape, under this opening, the thermograde in the bottom right direction of " L " shape is made to be 6-10K/mm, realize asymmetrical temperature distribution, under suitable seeding temperature, when seed crystal and melt contacts, seed crystal is preferentially to the bottom right direction growth of " L " shape, coordinate transient rise and counterclockwise given angle rotation process, and slowly upwards lift, make extraction section helically to increase growth;
(4) opening rotation asymmetry structure also can adopt rotation asymmetry angle structure, and angle is 70-80 degree, approximate right angle, if angle is too little, temperature distribution can be caused to distort serious.This opening makes the thermograde on angle direction be 6-10K/mm, realize asymmetrical temperature distribution, under suitable seeding temperature, when seed crystal and melt contacts, seed crystal preferentially grows to angle direction, coordinate transient rise and counterclockwise given angle rotation process, and slowly upwards lift, make extraction section helically to increase growth.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
Fig. 1 and Fig. 2 is the opening common structure vertical view of conventional upper heat reflection structure;
The top heat reflection structure vertical view of Fig. 3 to be opening be rotation asymmetry angle structure;
The top heat reflection structure vertical view of Fig. 4 to be opening be " T " character form structure being rotated counterclockwise 90 degree;
The top heat reflection structure vertical view of Fig. 5 to be opening be " L " shape structure.
Embodiment
embodiment 1
As shown in Figure 3, be that the top heat reflection structure of rotation asymmetry angle structure is installed in kyropoulos sapphire growth apparatus and melts by opening, more lower seed crystal, seeding.
More specifically, the angle of Rotational Symmetry angle structure is 70 degree of angles.
embodiment 2
The present embodiment is on the basis of embodiment 1, and other are constant, and the angle changing Rotational Symmetry angle structure is 80 degree of angles.
embodiment 3
The present embodiment is on the basis of embodiment 1, and other are constant, and the angle changing Rotational Symmetry angle structure is 75 degree of angles.
embodiment 4
As shown in Figure 4, be that the top heat reflection structure of " T " character form structure being rotated counterclockwise 90 degree is installed in kyropoulos sapphire growth apparatus and melts by opening, more lower seed crystal, seeding.
embodiment 5
As shown in Figure 5, be that the top heat reflection structure of " L " shape is installed in kyropoulos sapphire growth apparatus and melts by opening, more lower seed crystal, seeding.
Adopt the top heat reflection structure of embodiment 1 ~ 5 rotation asymmetry structure, the crystal mass grown be excellent, stress is little, dislocation desity is low, perfection of crystal and optical homogeneity is good, yield rate is high, can reduce costs, be easy to industrialization.
More than show and describe ultimate principle of the present utility model and principal character and advantage of the present utility model.The technician of the industry should understand; the utility model is not restricted to the described embodiments; what describe in above-described embodiment and specification sheets just illustrates principle of the present utility model; under the prerequisite not departing from the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the utility model.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (5)
1. a thermal field top heat reflection structure for kyropoulos growing sapphire crystal, is characterized in that: the heat loss through radiation mouth of described top heat reflection structure is rotation asymmetry structural openings.
2. the thermal field top heat reflection structure of kyropoulos growing sapphire crystal according to claim 1, is characterized in that: described rotation asymmetry structural openings is rotated counterclockwise 90 degree of " T " fonts.
3. the thermal field top heat reflection structure of kyropoulos growing sapphire crystal according to claim 1, is characterized in that: described rotation asymmetry structural openings is " L " shape.
4. the thermal field top heat reflection structure of kyropoulos growing sapphire crystal according to claim 1, is characterized in that: described rotation asymmetry structural openings is rotation asymmetry angle structure.
5. the thermal field top heat reflection structure of kyropoulos growing sapphire crystal according to claim 4, is characterized in that: the angle of described rotation asymmetry angle structure is 70-80 degree angles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520648160.7U CN205062231U (en) | 2015-08-26 | 2015-08-26 | Steep hot reflection configuration in thermal field upper portion of growth sapphire crystal of thinking of a way |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520648160.7U CN205062231U (en) | 2015-08-26 | 2015-08-26 | Steep hot reflection configuration in thermal field upper portion of growth sapphire crystal of thinking of a way |
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|---|---|
| CN205062231U true CN205062231U (en) | 2016-03-02 |
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| CN201520648160.7U Expired - Fee Related CN205062231U (en) | 2015-08-26 | 2015-08-26 | Steep hot reflection configuration in thermal field upper portion of growth sapphire crystal of thinking of a way |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105200478A (en) * | 2015-10-10 | 2015-12-30 | 中联西北工程设计研究院有限公司 | Inner cavity electroplating continuous production device |
-
2015
- 2015-08-26 CN CN201520648160.7U patent/CN205062231U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105200478A (en) * | 2015-10-10 | 2015-12-30 | 中联西北工程设计研究院有限公司 | Inner cavity electroplating continuous production device |
| CN105200478B (en) * | 2015-10-10 | 2018-05-01 | 中联西北工程设计研究院有限公司 | Electroplate continuous producing apparatus in a kind of inner cavity |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160302 Termination date: 20170826 |