CN103386715A - Method for preparing single-crystal-like seed crystal by electric spark process - Google Patents

Method for preparing single-crystal-like seed crystal by electric spark process Download PDF

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Publication number
CN103386715A
CN103386715A CN2012101468467A CN201210146846A CN103386715A CN 103386715 A CN103386715 A CN 103386715A CN 2012101468467 A CN2012101468467 A CN 2012101468467A CN 201210146846 A CN201210146846 A CN 201210146846A CN 103386715 A CN103386715 A CN 103386715A
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CN
China
Prior art keywords
crystal
silicon
seed
seed crystal
electric spark
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Pending
Application number
CN2012101468467A
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Chinese (zh)
Inventor
李文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuxi Autowell Technology Co Ltd
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Wuxi Autowell Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuxi Autowell Technology Co Ltd filed Critical Wuxi Autowell Technology Co Ltd
Priority to CN2012101468467A priority Critical patent/CN103386715A/en
Publication of CN103386715A publication Critical patent/CN103386715A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a method for preparing a single-crystal-like seed crystal by an electric spark process. After being improved on the basis of an electro-discharge linear cutting machine tool, the method is used for cutting a silicon stick. The method is characterized in that the silicon stick is cut into a long seed crystal silicon plate through cross reciprocating movement of an electrode wire, and the seed crystal silicon plate is chamfered through longitudinal movement to form the rectangular plate-shaped seed crystal; the thickness of the seed crystal can be 10 to 60mm and the width is changed according to the cutting position; and the silicon stick is vertically arranged, and the electrode wire is parallel to the central line of the silicon rod.

Description

Electric spark technique prepares class single crystal seed method
Technical field
The present invention relates to a kind of electric spark technique and prepare class single crystal seed method, specifically with the seed crystal that the method can the increase substantially silicon single crystal rod rate of becoming a useful person, drop to the waste of raw material in production process and energy consumption minimum, the method can increase the area of seed crystal greatly simultaneously, can increase substantially ingot casting yield in class single crystal preparation process, and cutting plate, chamfering can disposablely be completed.The transformation of traditional electrical spark wire-cutting machine tool is rear to be realized because this technique is based on simultaneously, but thereby the production cost of silicon single crystal rod cutting in decrease equipment cost and photovoltaic industry chain, improve greatly production efficiency, further promoted the overall price trend market natural starting point of industry
Background technology
The preparation method of present class single crystal seed obtains vertical pulling method (100) crystal orientation monocrystal rod and carries out evolution, obtains the square column that cross dimensions is 156 * 156mm, is cut into the thick block seed crystal of 20mm.This traditional cutting mode is silicon rod utilization rate not high (greatly about 63%) not only, and the seed crystal area of becoming a useful person is little, easily produces hydro-planing in class monocrystalline ingot casting process, and simultaneously because the gap between seed crystal is a lot, the ingot casting yield is not high., due to the needs secondary operations, number of devices and recruitment quantity have been increased in process.Tradition evolution, a large amount of mortars of stripping and slicing process need consumption and Buddha's warrior attendant silk or steel wire, raw materials consumption is huge, can produce a large amount of silica flours in traditional evolution, stripping and slicing process simultaneously, not only is difficult to reclaim, and very easily causes environmental pollution.
Summary of the invention
The objective of the invention is, not high for present class single crystal seed preparation efficiency, raw materials consumption is huge, cost is high, is difficult to meet the problems such as the growing demand of solar energy industry and price Gao Qi, provides a kind of electric spark technique to prepare class single crystal seed method, thereby reduce the industry equipment investment, improve cutting efficiency, reduce energy consumption and raw materials consumption, and reduce environmental pollution.
Technical scheme of the present invention is: a kind of electric spark technique prepares class single crystal seed method, based on the electric spark linear cutting machine transformation is rear, silicon rod being cut, it is characterized in that wire electrode by traverse motion with silicon rod cut growth bar shaped seed crystal silicon plate, realize seed crystal silicon plate chamfering by lengthwise movement, obtain the tabular seed crystal of rectangle; Described seed crystal thickness can be 10-60mm, and width changes according to cutting position; Silicon rod is vertically placed, and wire electrode is parallel with the silicon rod center line.
Advantage of the present invention is:
1. electric spark belongs to traditional machine tool, is conducive to produce popularize, and realizes industrialization, can reduce to greatest extent manufacturing cost.
2. this method can improve the silicon single crystal rod utilization ratio, is increased to 89% by present 63%, greatly reduces the waste in class single crystal seed preparation technology, raw-material waste in production process is dropped to theoretical minimum, shortens process time, thereby reduces energy consumption.
3., based on this method, with an equipment, get final product the disposable cutting demand of completing, reduced equipment investment in industry.
4., because this method is that institute's trimming edge also is the silicon materials of moulding with the disposable excision forming of electric spark, can continue to use, improve the utilization rate of silicon materials.
5. spark cutting technique is to utilize discharge generation high temperature, makes material to be cut moment gasification, does not therefore need frosted or the diamond dust used on present excavation machine, has reduced raw materials consumption.
6. the ingot casting yield can be improved and effectively be improved to this method, due to the area of becoming a useful person that can increase substantially the class single crystal seed,, and the decrease energy consumption, increase the benefit.
7. electric spark class single crystal seed preparation method can significantly reduce present process costs, to the reduction of solar energy industry holistic cost, will play great impetus.
Description of drawings
Fig. 1 is the inventive method apparatus structure schematic diagram.
Fig. 2 is the inventive method work flow schematic diagram.
The specific embodiment
The invention will be further described below in conjunction with accompanying drawing:
Fig. 1 is the inventive method apparatus structure schematic diagram, comprises wire electrode (1), silicon single crystal rod (2).Described silicon single crystal rod (2) is vertically placed, and wire electrode (1) is parallel with the center line of silicon single crystal rod (2).
Fig. 2 is the inventive method work flow schematic diagram.A kind of electric spark technique prepares class single crystal seed method, based on the electric spark linear cutting machine transformation is rear, silicon rod being cut, it is characterized in that wire electrode by traverse motion with silicon rod cut growth bar shaped seed crystal silicon plate, realize seed crystal silicon plate chamfering by lengthwise movement, obtain the tabular seed crystal of rectangle; Described seed crystal thickness can be 10-60mm, and width changes according to cutting position.

Claims (3)

1. an electric spark technique prepares class single crystal seed method, based on the electric spark linear cutting machine transformation is rear, silicon rod being cut, it is characterized in that wire electrode by traverse motion with silicon rod cut growth bar shaped seed crystal silicon plate, realize seed crystal silicon plate chamfering by lengthwise movement, obtain the tabular seed crystal of rectangle.
2. a kind of electric spark technique according to claim 1 prepares class single crystal seed method, it is characterized in that described seed crystal thickness can be 10-60mm, and width changes according to cutting position.
3. a kind of electric spark technique according to claim 1 prepares class single crystal seed method, it is characterized in that described silicon rod vertically places, and described wire electrode is parallel with the silicon rod center line.
CN2012101468467A 2012-05-11 2012-05-11 Method for preparing single-crystal-like seed crystal by electric spark process Pending CN103386715A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012101468467A CN103386715A (en) 2012-05-11 2012-05-11 Method for preparing single-crystal-like seed crystal by electric spark process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012101468467A CN103386715A (en) 2012-05-11 2012-05-11 Method for preparing single-crystal-like seed crystal by electric spark process

Publications (1)

Publication Number Publication Date
CN103386715A true CN103386715A (en) 2013-11-13

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Family Applications (1)

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CN2012101468467A Pending CN103386715A (en) 2012-05-11 2012-05-11 Method for preparing single-crystal-like seed crystal by electric spark process

Country Status (1)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106738393A (en) * 2016-12-08 2017-05-31 中国电子科技集团公司第四十六研究所 A kind of method of use spark cutting technology fly-cutting CdS monocrystal
CN110712308A (en) * 2019-10-23 2020-01-21 常州时创能源科技有限公司 Cutting method of edge leather
CN110978303A (en) * 2019-12-20 2020-04-10 江苏高照新能源发展有限公司 Cutting method for improving utilization rate of silicon single crystal rod

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1788965A (en) * 2004-11-23 2006-06-21 希特隆股份有限公司 Apparatus and method for slicing an ingot
CN101138869A (en) * 2007-10-12 2008-03-12 南京航空航天大学 Monocrystalline silicon high-efficient composite cutting method and cutting system thereof
WO2011124044A1 (en) * 2010-04-08 2011-10-13 南京航空航天大学 Grinding/electrolysis combined multi-wire-slicing processing method for silicon wafers
CN202137481U (en) * 2011-05-31 2012-02-08 上海大量电子设备有限公司 On-line controlling electrode filament tensioning device
CN102350551A (en) * 2011-09-29 2012-02-15 李二强 Wire-feed twin-wire exchange wire feeding system in WEDM (wire cut electrical discharge machining)
CN102350743A (en) * 2011-09-27 2012-02-15 苏州大学 Silicon ingot processing method for slicing

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1788965A (en) * 2004-11-23 2006-06-21 希特隆股份有限公司 Apparatus and method for slicing an ingot
CN101138869A (en) * 2007-10-12 2008-03-12 南京航空航天大学 Monocrystalline silicon high-efficient composite cutting method and cutting system thereof
WO2011124044A1 (en) * 2010-04-08 2011-10-13 南京航空航天大学 Grinding/electrolysis combined multi-wire-slicing processing method for silicon wafers
CN202137481U (en) * 2011-05-31 2012-02-08 上海大量电子设备有限公司 On-line controlling electrode filament tensioning device
CN102350743A (en) * 2011-09-27 2012-02-15 苏州大学 Silicon ingot processing method for slicing
CN102350551A (en) * 2011-09-29 2012-02-15 李二强 Wire-feed twin-wire exchange wire feeding system in WEDM (wire cut electrical discharge machining)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106738393A (en) * 2016-12-08 2017-05-31 中国电子科技集团公司第四十六研究所 A kind of method of use spark cutting technology fly-cutting CdS monocrystal
CN110712308A (en) * 2019-10-23 2020-01-21 常州时创能源科技有限公司 Cutting method of edge leather
CN110978303A (en) * 2019-12-20 2020-04-10 江苏高照新能源发展有限公司 Cutting method for improving utilization rate of silicon single crystal rod

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