CN101899705A - Guide die structure for growing extra-thick monocrystal alumina wafer - Google Patents
Guide die structure for growing extra-thick monocrystal alumina wafer Download PDFInfo
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- CN101899705A CN101899705A CN201010235011XA CN201010235011A CN101899705A CN 101899705 A CN101899705 A CN 101899705A CN 201010235011X A CN201010235011X A CN 201010235011XA CN 201010235011 A CN201010235011 A CN 201010235011A CN 101899705 A CN101899705 A CN 101899705A
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Abstract
The invention provides a crucible guide die structure for growing an extra-thick monocrystal alumina wafer. The crucible guide die structure has the advantages of capacity of growing 8 to 18-mm type extra-thick monocrystal alumina wafers, simple die core structure of each crystallizer, capacity of controlling and adjusting the temperature gradient of crystallization table-board wafers, and guarantee of no bubbles, no growth striations, low internal stress, difficult cracking and high qualification rate of crystal finished products. The crucible guide die structure comprises a crucible, wherein the crucible is arranged in a heater through a grip; the heater is arranged in an electrode plate; a thermal insulation screen is arranged outside the heater; the crystallizers are arranged in the crucible; a seed crystal is arranged above the crystallization table-board of each crystallizer; the seed crystal is connected with a seed crystal coupling sleeve through a connection structure; the crucible has a cuboid shape or a rectangular strip shape with two arc ends; the crystallizers are arranged along the central line of the length direction of the crucible sequentially; and the heater has a cuboid shape or a rectangular strip shape with two arc ends. The crucible guide die structure is characterized in that: each crystallizer comprises a die core; the die core comprises two inversed L-shaped molybdenum plates; the end parts of the two inversed L-shaped molybdenum plates are hermetically welded with each other; and the two inversed L-shaped molybdenum plates are in symmetrical rivet weld connection with each other through a molybdenum rod.
Description
Technical field
The present invention relates to be specially guided-mode structure in order to growing extra-thick large single crystal alumina wafer in order to growth shaping single crystal aluminum oxide technical field.
Background technology
Usefulness stone sheets such as guided mode method growth LED substrate have than crystal pulling method, warm terraced method, kyropoulos that energy consumption is low, production efficiency is high, cost is low, the stress distribution advantage of reasonable, and GaN epitaxy preferably has the advantages that quality is good, qualification rate is high.The guided mode method adopts radio-frequency induction heating or graphite resistance heating usually both at home and abroad, publication number is that the utility model of CN200981899 discloses a kind of guided-mode structure in order to the growth shaping single crystal alumina ceramics, its well heater, crucible is that cuboid or both ends are the rectangular bar shaped of circular shape, cuboid or both ends are that equidistant place, the rectangular bar shaped central shaft both sides temperature of circular shape equates, guaranteed at well heater, yield rate height during the crystallizer crystallization under the dual samming condition of crucible, the crystal internal stress is little, stablizing of physical dimension and inner quality, cost is low, realizes industrialized mass production.But because its crystallizer comprises core rod and die sleeve, core rod is installed in the die sleeve, core rod and die sleeve are that whole molybdenum piece processes, thickness is big, when the growing single-crystal alumina wafer, easily cause temperature hysteresis, be only applicable to the signle crystal alumina ceramics of growth shaping single crystal alumina ceramic tube or 3mm～5mm, inapplicable growing extra-thick large single crystal alumina wafer.At present, the grow thickness of the signle crystal alumina sheet that a kind of LED substrate uses of external radio frequency method is 5mm, needs the follow-up technology of cutting, grind, throw after its moulding growth, and material use efficiency is low, final production cost height; In addition, in the crucible guided-mode structure of external growth shaping single crystal alumina wafer, for after increasing charging capacity and adopting multimodeization; the mold insert structure complexity of its crystallizer; and thermograde is big at growth crystallization table top place, easily causes signle crystal alumina sheet cracking, and product qualified rate is low.
Summary of the invention
At the problems referred to above, the invention provides crucible guided-mode structure in order to growing extra-thick large single crystal alumina wafer, the special thick large single crystal alumina wafer of its energy growth shaping 8mm～18mm, the mold insert structure of its crystallizer is simple, and can control and regulate crystallization table top sheet thermograde, it is low to guarantee that the crystal finished product does not have bubble, no striation, internal stress, and not easy to crack, cost qualification rate height.
Its technical scheme is such: it comprises crucible, described crucible is installed in the well heater by the holder handle, described well heater is installed on battery lead plate, described well heater is outside equipped with heat protection screen, be provided with crystallizer in the described crucible, the top of described crystallizer crystallization table top is provided with seed crystal, described seed crystal is coupling to interlock by syndeton and seed crystal and connects, described crucible is that cuboid or both ends are the rectangular bar shaped of circular shape, described crystallizer is arranged successively along the medullary ray of the length direction of crucible, described well heater is that cuboid or both ends are the rectangular bar shaped of circular shape, it is characterized in that: described crystallizer comprises core rod, described core rod comprises that two are fallen L shaped molybdenum plate, and described two are fallen L shaped molybdenum plate Seal welds for ends and connect by molybdenum rod symmetry rivet welding.
It is further characterized in that: described two are fallen L shaped molybdenum plate and connect its top base plate of back and constitute V font crystallization table top; Two faces of described V font crystallization table top are along the Y-axis symmetry, and wherein being in the crystal plane on Y-axis right side and the angle α of horizontal plane is 24 °～45 °; Described two to fall L shaped molybdenum plate thickness be 2mm～4mm; The vertical range that described V font crystallization table top is lower than described crucible cover mouth is 0.5mm～2mm; Described two are fallen L shaped molybdenum plate base point and are welded in the crystallizer base plate; Described crystallizer base plate is close to described crucible bottom surface; Described two fall L shaped molybdenum plate along its length the outer wall of a side be provided with stiffening web, contact of crucible inwall and spot welding that described stiffening web and offside parallel are connected; Described heat protection screen is formed by connecting by the graphite cake assembly unit, and the graphite cake that constitutes the inside and outside layer of described heat protection screen is the high purity graphite plate or is coated with the graphite cake that tungsten is handled; The skin that constitutes described heat protection screen also can be high temperature resistant molybdenum plate;
The present invention is in order to the guided-mode structure of growing extra-thick large single crystal alumina wafer, and its mold structure is simple, and the crystallizer core rod falls L shaped molybdenum plate by two and connects and composes by molybdenum rod symmetry rivet welding, adapts to direct growth moulding tabular crystal; Two faces of V font crystallization table top are along the Y-axis symmetry, and the angle α that wherein is in the crystal plane on Y-axis right side and horizontal plane is 24 °～45 °, two, and to fall L shaped molybdenum plate thickness be that 2mm～4mm can effectively guarantee temperature-stable, reduces temperature hysteresis, the no bubble in xln surface; V font crystallization table top is lower than crucible cover mouth vertical range 0.5mm～2mm can make the crystallization of crystallizer table top have less thermograde, thereby makes crystal not easy to crack; Two of crystallizer core rod fall L shaped molybdenum plate and connect by the molybdenum rod rivet welding and can guarantee that crystal does not have striation; Heat protection screen is formed by connecting by the graphite cake assembly unit, and the graphite cake that constitutes the inside and outside layer of described heat protection screen is the high purity graphite plate or is coated with the graphite cake that tungsten handles and can guarantees the stable of temperature field, guarantees higher crystal product qualification rate; It is low, not easy to crack to adopt the special thick large single crystal alumina wafer of guided-mode structure growth shaping of the present invention to have a no bubble, no striation, internal stress, the product qualified rate height, it can adopt the multi-thread cutting technique cutting of diamond as the GaN substrate slice, cost is lower than other growing methods, is more suitable for industrialized mass production.
Description of drawings
Fig. 1 is the sectional view of the guided-mode structure front view in order to growing extra-thick large single crystal alumina wafer of the present invention;
The partial view that Fig. 2 looks for Fig. 1 left side;
Fig. 3 is the structure for amplifying synoptic diagram of crucible, crystallizer among the present invention.
Embodiment
See Fig. 1, Fig. 2 and Fig. 3, the present invention includes crucible 8, crucible 8 is installed in the well heater 13 by holder handle 18, well heater 13 is installed on battery lead plate 12, well heater 13 is outside equipped with heat protection screen 17, be provided with crystallizer 22 in the crucible 8, the top of crystallizer 22 crystallization table tops is provided with seed crystal 5, seed crystal 5 is connected with seed crystal shaft-linking sleeve 1 by syndeton, this syndeton comprises seed shaft 2, seed shaft 2 is connected with seed chuck 3, and seed chuck 3 is connected with seed crystal 5 usefulness screws, and crucible 8 is that cuboid or both ends are the rectangular bar shaped of circular shape, crystallizer 22 is arranged successively along the medullary ray of the length direction of crucible 8, in the present embodiment, crystallizer 22 has been arranged 5 along the medullary ray of the length direction of crucible 3, and well heater 13 is that cuboid or both ends are the rectangular bar shaped of circular shape; Crystallizer 22 comprises core rod, and core rod comprises that two are fallen 9, two of L shaped molybdenum plates and fall L shaped molybdenum plate 9 Seal welds for ends and connect by the symmetrical rivet weldings of molybdenum rod 10.Two are fallen L shaped molybdenum plate 9 and connect its top base plates of back and constitute V font crystallization table top; Two faces of described V font crystallization table top are along the Y-axis symmetry, and wherein being in the crystal plane on Y-axis right side and the angle α of horizontal plane is 24 °～45 °; Two are fallen L shaped molybdenum plate 9 thickness d is 2mm～4mm; The vertical range h that the crystallization table top is lower than crucible cover mouth 7 surfaces is 0.5mm～2mm; Two are fallen L shaped molybdenum plate 9 base point and are welded in crystallizer base plate 21; Two fall L shaped molybdenum plate 9 along its length the outer wall of a side be provided with stiffening web 20, contact of crucible inwall and spot welding that stiffening web 20 and offside parallel are connected; Heat protection screen 17 is formed by connecting by the graphite cake assembly unit, and the graphite cake that constitutes the inside and outside layer of described heat protection screen is the high purity graphite plate or is coated with the graphite cake that tungsten is handled; The skin that constitutes described heat protection screen also can be high temperature resistant molybdenum plate; Crystallizer base plate 21 is close to described crucible bottom surface.Among Fig. 1 and Fig. 2,3 is seed chuck, and 4 is that vision slit, 6 is graphite pillar, 19 crucible tray handles for protection screen group, 15 crucible supporting plates, 16 for insulcrete, 14 for radiation shield group, 12 for crucible cover, 11 for tungsten weldering, 7.Describe the process of growing extra-thick large single crystal alumina wafer below in conjunction with accompanying drawing: the signle crystal alumina liquid in the crucible 8 enters two of core rod from the base plate 21 of crystallizer, and to fall the interlayer that L shaped molybdenum plate 9 forms up, excessive from the outlet of interlayer, seed crystal 5 traction crystalline signle crystal alumina sheets are up, have and overflow and interlayer exports continuous signle crystal alumina liquid, continuous crystallisation, thus grow into the signle crystal alumina sheet.
Claims (7)
1. in order to the guided-mode structure of growing extra-thick large single crystal alumina wafer, it comprises crucible, described crucible is installed in the well heater by the holder handle, described well heater is installed on battery lead plate, described well heater is outside equipped with heat protection screen, be provided with crystallizer in the described crucible, the top of described crystallizer crystallization table top is provided with seed crystal, described seed crystal is coupling to interlock by syndeton and seed crystal and connects, described crucible is that cuboid or both ends are the rectangular bar shaped of circular shape, described crystallizer is arranged successively along the medullary ray of the length direction of crucible, described well heater is that cuboid or both ends are the rectangular bar shaped of circular shape, it is characterized in that: described crystallizer comprises core rod, and described core rod comprises that two are fallen L shaped molybdenum plate, and described two are fallen L shaped molybdenum plate Seal welds for ends and connect by molybdenum rod symmetry rivet welding.
2. the guided-mode structure in order to growing extra-thick large single crystal alumina wafer according to claim 1, it is characterized in that: described two are fallen L shaped molybdenum plate and connect its top base plate of back and constitute V font crystallization table top, two faces of described V font crystallization table top are along the Y-axis symmetry, and wherein being in the crystal plane on Y-axis right side and the angle α of horizontal plane is 24 °～45 °.
3. the guided-mode structure in order to growing extra-thick large single crystal alumina wafer according to claim 1 and 2 is characterized in that: described two to fall L shaped molybdenum plate thickness be 2mm～4mm.
4. the guided-mode structure in order to growing extra-thick large single crystal alumina wafer according to claim 3 is characterized in that: described V font crystallization table top is lower than described crucible cover mouth 0.5mm～2mm.
5. the guided-mode structure in order to growing extra-thick large single crystal alumina wafer according to claim 4 is characterized in that: described two are fallen L shaped molybdenum plate base point and are welded in the crystallizer base plate, and described crystallizer base plate is close to described crucible bottom surface.
6. the guided-mode structure in order to growing extra-thick large single crystal alumina wafer according to claim 5, it is characterized in that: described two fall L shaped molybdenum plate along its length the outer wall of a side be provided with stiffening web, contact of crucible inwall and spot welding that described stiffening web and offside parallel are connected.
7. the guided-mode structure in order to growing extra-thick large single crystal alumina wafer according to claim 6, it is characterized in that: described heat protection screen is formed by connecting by the graphite cake assembly unit, the graphite cake that constitutes the inside and outside layer of described heat protection screen is the high purity graphite plate or is coated with the graphite cake that tungsten is handled that the skin that constitutes described heat protection screen also can be high temperature resistant molybdenum plate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010235011XA CN101899705A (en) | 2010-07-23 | 2010-07-23 | Guide die structure for growing extra-thick monocrystal alumina wafer |
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| CN201010235011XA CN101899705A (en) | 2010-07-23 | 2010-07-23 | Guide die structure for growing extra-thick monocrystal alumina wafer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103114329A (en) * | 2013-03-20 | 2013-05-22 | 镇江和和蓝晶科技有限公司 | Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method |
| CN103160915A (en) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | Drawing die plate for C-shaped silicon core |
| CN104047049A (en) * | 2014-06-30 | 2014-09-17 | 南京航空航天大学 | Preparation method for growing crack-free sapphire crystals by edge-defined film-fed growth process |
| CN104088011A (en) * | 2014-07-15 | 2014-10-08 | 天津市恒瑜晶体材料制造有限公司 | Preparation method of sapphire micro-capillary and die used in preparation method |
| CN104611764A (en) * | 2015-01-21 | 2015-05-13 | 华中科技大学 | Micro-pulling-down crystal growing furnace |
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| JPS5722200A (en) * | 1980-07-14 | 1982-02-05 | Hitachi Ltd | Method for growing single crystal plate |
| JP2007161554A (en) * | 2005-12-16 | 2007-06-28 | Toshiba Ceramics Co Ltd | Method for growing optical biaxial single crystal and optical biaxial single crystal produced by using the method |
| CN200981899Y (en) * | 2006-08-25 | 2007-11-28 | 俞鹤庆 | Guide mould structure for growing formed single-crystal aluminum oxide |
| US20080245292A1 (en) * | 2007-04-09 | 2008-10-09 | Sapphire Systems Inc. | Apparatus and methods of growing void-free crystalline ceramic products |
| CN201678764U (en) * | 2010-07-23 | 2010-12-22 | 无锡金岩光电晶体科技有限公司 | Guide mode structure used for growing super-thick large-single crystal alumina wafers |
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2010
- 2010-07-23 CN CN201010235011XA patent/CN101899705A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS5722200A (en) * | 1980-07-14 | 1982-02-05 | Hitachi Ltd | Method for growing single crystal plate |
| JP2007161554A (en) * | 2005-12-16 | 2007-06-28 | Toshiba Ceramics Co Ltd | Method for growing optical biaxial single crystal and optical biaxial single crystal produced by using the method |
| CN200981899Y (en) * | 2006-08-25 | 2007-11-28 | 俞鹤庆 | Guide mould structure for growing formed single-crystal aluminum oxide |
| US20080245292A1 (en) * | 2007-04-09 | 2008-10-09 | Sapphire Systems Inc. | Apparatus and methods of growing void-free crystalline ceramic products |
| CN201678764U (en) * | 2010-07-23 | 2010-12-22 | 无锡金岩光电晶体科技有限公司 | Guide mode structure used for growing super-thick large-single crystal alumina wafers |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103160915A (en) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | Drawing die plate for C-shaped silicon core |
| CN103114329A (en) * | 2013-03-20 | 2013-05-22 | 镇江和和蓝晶科技有限公司 | Plate mold for growing sapphire by EFG (edge-defined film-fed crystal growth) method |
| CN104047049A (en) * | 2014-06-30 | 2014-09-17 | 南京航空航天大学 | Preparation method for growing crack-free sapphire crystals by edge-defined film-fed growth process |
| CN104088011A (en) * | 2014-07-15 | 2014-10-08 | 天津市恒瑜晶体材料制造有限公司 | Preparation method of sapphire micro-capillary and die used in preparation method |
| CN104088011B (en) * | 2014-07-15 | 2017-01-18 | 牛玥 | Preparation method of sapphire micro-capillary and die used in preparation method |
| CN104611764A (en) * | 2015-01-21 | 2015-05-13 | 华中科技大学 | Micro-pulling-down crystal growing furnace |
| CN104611764B (en) * | 2015-01-21 | 2017-10-31 | 华中科技大学 | A kind of micro- downward lifting crystal growing furnace |
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Effective date of abandoning: 20170301 |