CN202808987U - Large-sized single crystal seed - Google Patents

Large-sized single crystal seed Download PDF

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Publication number
CN202808987U
CN202808987U CN 201220327258 CN201220327258U CN202808987U CN 202808987 U CN202808987 U CN 202808987U CN 201220327258 CN201220327258 CN 201220327258 CN 201220327258 U CN201220327258 U CN 201220327258U CN 202808987 U CN202808987 U CN 202808987U
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CN
China
Prior art keywords
single crystal
seed
sized
crystal silicon
crystal seed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201220327258
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Chinese (zh)
Inventor
孙勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sino Si Advanced Material Wuxi Co ltd
Original Assignee
WUXI SINO SI-TECH Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to CN 201220327258 priority Critical patent/CN202808987U/en
Application granted granted Critical
Publication of CN202808987U publication Critical patent/CN202808987U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model discloses a large-sized single crystal seed, which is characterized in that the length is between 700 and 1200mm, the thickness is between 5 and 30mm, and the width is between 50 and 400mm. A production process of the large-sized single crystal seed comprises the following steps of (1) cutting head and tail of a large-diameter single crystal silicon rod to preset length; (2) longitudinally cutting the single crystal silicon rod without head or tail into a slice with a preset thickness; and (3) trimming the cut slice to obtain a final finished product. The large-sized single crystal seed has a large size and small number of splicing, and is more advantages to ingot casting of single crystals. The process of the large-sized mono-like seed can be used for producing more seed products in single crystal silicon rods with the same length and diameter, so that the round area of the whole single crystal silicon rod is used in the largest range, the utilization rate is greatly improved, and the production cost can be reduced.

Description

A kind of large size class single crystal seed
Technical field
The utility model relates to a kind of large size class single crystal seed.
Background technology
The restriction that present traditional class single crystal seed is subject to cutting technique is the made 156*156 of being of a size of square in the market, and as shown in Figure 1, its main drawback is very few for the silicon single crystal rod usable floor area in the cutting production process, causes high expensive.Its limitation of size is mainly and limited by production unit line excavation machine, can only cut out the seed crystal of this maximum 156*156 size.
The little seed crystal of present 156*156 such as the seed crystal that need are spliced into final finished 780*780, need 25 of splicings, since when splicing splicing is improper gap excessive, polycrystal raw material is liquid after melting in class monocrystalline ingot casting process simultaneously, liquid will flow into by the seed crystal slit, and the buoyancy effect that is subject to more easily liquid owing to the monolithic seed crystal is floating, affects final class monocrystalline Cheng Jing, because large size seed crystal monolithic is times over the weight of 156*156, buoyancy almost can be ignored on its impact.Large size seed crystal combination only needs the several areas that can reach 780*780 in addition, than small size seed crystal combination slit lacked near half, the potential impact that is subject to buoyancy greatly reduces.
The utility model content
The utility model purpose is to provide a kind of silicon single crystal rod utilization ratio high for the defective of prior art, large large size class single crystal seed and the production technique thereof of cutting seed size.
The utility model adopts following technical scheme for achieving the above object:
A kind of large size class single crystal seed is characterized in that: its length is 700-1200mm, and thickness is 5-30mm, and width is 50-400mm.
A kind of production technique of large size class single crystal seed comprises the steps:
(1) the major diameter single crystal silicon rod is decaptitated tail cuts into the preseting length size;
(2) will the decaptitate silicon single crystal rod of tail vertically cuts into the thin slice of setting thickness;
(3) with the thin slice trimming skin of well cutting, obtain final finished.
The utility model large size class single crystal seed area is large, and splicing quantity is few, is more conducive to the ingot casting of class monocrystalline.Large size class single crystal seed technique can be made more seed crystal product in the silicon single crystal rod of equal length and diameter, because of the use of its maximum range the area of a circle of whole silicon single crystal rod so that utilization ratio improves greatly, also make production cost obtain reduction.
Description of drawings
Fig. 1,2 is prior art cutting synoptic diagram, and dotted line is line of cut among the figure;
Fig. 3 is the utility model cutting synoptic diagram, and dotted line is line of cut among the figure;
Fig. 4 is the utility model synoptic diagram.
Embodiment
A kind of large size class single crystal seed as shown in Figure 4, its length is 700-1200mm, and thickness is 5-30mm, and width is 50-400mm.
A kind of production technique of large size class single crystal seed comprises the steps: as shown in Figure 3
(1) the major diameter single crystal silicon rod is decaptitated tail cuts into the preseting length size;
(2) will the decaptitate silicon single crystal rod of tail vertically cuts into the thin slice of setting thickness;
(3) with the thin slice trimming skin of well cutting, obtain final finished.
With 8 cun silicon single crystal rod diameter 200mm for example, length cutting 780mm, its maximum product can be made 780*196, head and shoulders above the 156*156 product in the stack pile situation.

Claims (1)

1. large size class single crystal seed, it is characterized in that: its length is 700-1200mm, and thickness is 5-30mm, and width is 50-400mm.
CN 201220327258 2012-07-06 2012-07-06 Large-sized single crystal seed Expired - Lifetime CN202808987U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220327258 CN202808987U (en) 2012-07-06 2012-07-06 Large-sized single crystal seed

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220327258 CN202808987U (en) 2012-07-06 2012-07-06 Large-sized single crystal seed

Publications (1)

Publication Number Publication Date
CN202808987U true CN202808987U (en) 2013-03-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220327258 Expired - Lifetime CN202808987U (en) 2012-07-06 2012-07-06 Large-sized single crystal seed

Country Status (1)

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CN (1) CN202808987U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102758243A (en) * 2012-07-06 2012-10-31 无锡中硅科技有限公司 Seed crystal of large-size single crystal and production process thereof
CN105986309A (en) * 2015-01-07 2016-10-05 茂迪股份有限公司 Method for preparing mono-like crystal
CN107190317A (en) * 2017-07-17 2017-09-22 晶科能源有限公司 A kind of large scale class single crystal seed and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102758243A (en) * 2012-07-06 2012-10-31 无锡中硅科技有限公司 Seed crystal of large-size single crystal and production process thereof
CN105986309A (en) * 2015-01-07 2016-10-05 茂迪股份有限公司 Method for preparing mono-like crystal
CN107190317A (en) * 2017-07-17 2017-09-22 晶科能源有限公司 A kind of large scale class single crystal seed and preparation method thereof

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: WUXI SINO SILICON NEW MATERIAL CO., LTD.

Free format text: FORMER OWNER: WUXI SINO SI-TECH CO., LTD.

Effective date: 20140207

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20140207

Address after: 214000, No. 261, Singapore Industrial Park, New District, Jiangsu, Wuxi

Patentee after: Wuxi Zhongsi New Materials Co.,Ltd.

Address before: 214000, 1321, Xicheng Road, industrial district, Qingyang Town, Wuxi, Jiangsu, Jiangyin

Patentee before: WUXI SINO SI TECH Co.,Ltd.

C56 Change in the name or address of the patentee

Owner name: SINO-SI ADVANCED MATERIAL WUXI CO., LTD.

Free format text: FORMER NAME: WUXI SINO SILICON NEW MATERIAL CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: 214000, No. 261, Singapore Industrial Park, New District, Jiangsu, Wuxi

Patentee after: SINO-SI ADVANCED MATERIAL WUXI Co.,Ltd.

Address before: 214000, No. 261, Singapore Industrial Park, New District, Jiangsu, Wuxi

Patentee before: Wuxi Zhongsi New Materials Co.,Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20130320