CN105986309A - Method for preparing mono-like crystal - Google Patents
Method for preparing mono-like crystal Download PDFInfo
- Publication number
- CN105986309A CN105986309A CN201510045470.4A CN201510045470A CN105986309A CN 105986309 A CN105986309 A CN 105986309A CN 201510045470 A CN201510045470 A CN 201510045470A CN 105986309 A CN105986309 A CN 105986309A
- Authority
- CN
- China
- Prior art keywords
- crucible
- monocrystalline
- preparation
- single crystal
- crystal seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title abstract description 9
- 239000002210 silicon-based material Substances 0.000 claims abstract description 19
- 238000002360 preparation method Methods 0.000 claims description 28
- 239000004575 stone Substances 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 24
- 230000007547 defect Effects 0.000 abstract description 16
- 239000007788 liquid Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052571 earthenware Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000014347 soups Nutrition 0.000 description 3
- 238000007373 indentation Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000004484 Briquette Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000002271 resection Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A method for preparing a single-like crystal comprises the following steps. A plurality of crucibles are arranged in the furnace body. A single crystal seed is placed in each crucible. A silicon material is placed on the single crystal seed in each crucible. And carrying out crystal growth to form a single crystal ingot by utilizing the silicon material and the single crystal seed crystal in each crucible. Therefore, the purpose of a crystal-free interface can be achieved during crystal growth, and the defects of crystal ingot can be reduced.
Description
Technical field
The invention relates to the manufacture method of a kind of silicon material, and in particular to a kind monocrystalline
The preparation method of (mono-like silicon).
Background technology
Class monocrystalline growth technology is that one partly melts law technology.In class monocrystalline growth technology, it is first in crucible
First lay some monocrystalline and be used as long brilliant crystal seed, on these monocrystalline, lay silicon material.Then, at long crystalline substance
Silicon material in heating crucible in stove, so as to melting these silicon materials.In the period of heating silicon material, through temperature control side
Formula, makes silicon material from top to bottom melt, and controls the melting level of silicon material in the position of single crystal seed.When silicon material
When melting the position to single crystal seed, brilliant pattern of long crystal furnace switching being grown up, now the growth of silicon wafer is along list
Jingjing kind is grown up, and obtains monocrystalline crystalline substance heavy stone used as an anchor.But because the monocrystalline crystalline substance heavy stone used as an anchor not Chai Shi that such mode is grown up
(Czochralski) crystal growing technology gained, thus it is not without defect, therefore commonly referred to as class monocrystalline.
Class monocrystalline one of the reason of effective volume production cannot be that brilliant heavy stone used as an anchor quality is difficult to control to.The brilliant bad control of heavy stone used as an anchor quality
The main cause of system is, is limited to the size of single crystal seed, and crucible domestic demand lays multi-disc single crystal seed can be substantially
It is covered with the whole bottom surface of crucible, and the crystal boundary between crystal seed and crystal seed easily forms defect during long crystalline substance and rises
Beginning district or the induction district of twin crystal.Consequently, it is possible to the brilliant heavy stone used as an anchor quality variation grown up will be caused, or it is unable to maintain that
Single crystal orientation.Wherein, the induction district of twin crystal be to occur at defect serious in the case of, the growth of silicon wafer may
Can grow polycrystalline, and in causing brilliant heavy stone used as an anchor, have the phenomenon that monocrystalline and polycrystalline all exist.
Class monocrystalline cannot another reason of effective volume production be, due to the cost relatively polycrystalline processing procedure of class monocrystalline processing procedure
Cost high, can be obtained with monocrystalline ratio and quality during therefore needing to consider casting heavy stone used as an anchor.Additionally, large scale
Brilliant heavy stone used as an anchor needed for crystal seed thickness relatively large, the most also can increase processing procedure cost.
Summary of the invention
Therefore, a purpose of the present invention is exactly in the preparation method providing a kind monocrystalline, and it is at same long crystalline substance
Multiple crucible is set in the body of heater of stove, and a single crystal seed is respectively set in each crucible, thus may be used
Reach the purpose without crystal boundary face when long crystalline substance, and the defect of brilliant heavy stone used as an anchor can be reduced.
It is another object of the present invention in the preparation method providing a kind monocrystalline, it can be between adjacent crucible
Heater is set, so can effectively control the thermal field in each crucible during long crystalline substance, and then can be calibrated
True controls long brilliant solid-liquid interface.
A further object of the present invention is that it can be at the end of each crucible in the preparation method providing a kind monocrystalline
The lower section of portion's middle section arranges high heat-conduction coefficient element, or can be additionally then at the bottom outer-edge region of crucible
Lower section low heat conduction coefficient element is set, can more effectively control the thermal field in each crucible whereby, and more
Control long brilliant solid-liquid interface exactly so that solid-liquid interface presents middle convex and outside is low, so that solid-liquid is situated between
The outside in face is tensile stress, and then can reduce the defect in crystal boundary face.Additionally, due to solid-liquid interface can obtain
Effectively control, be thus advantageous to reduce and melt (over-melt) degree, it is to avoid the regional area of single crystal seed,
Particularly outer edge area is melted light.
Another object of the present invention is that the most each crucible is rectangular in the preparation method providing a kind monocrystalline
Shape, therefore when wafer cuts, can make brilliant heavy stone used as an anchor obtain more efficient utilization.
According to the above-mentioned purpose of the present invention, proposing the preparation method of a kind monocrystalline, it comprises the steps of.
Multiple crucible is set in body of heater.One single crystal seed is set in each crucible.In each crucible, silicon is set
Expect on single crystal seed.Carry out growing brilliant step, to utilize the silicon material in each crucible to form one with single crystal seed
Class monocrystalline crystalline substance heavy stone used as an anchor.
According to one embodiment of the invention, the length of the bottom surface of above-mentioned each crucible and wide the most relatively single crystal seed
The length of bottom surface and roomy 10mm to 100mm.
Size according to another embodiment of the present invention, the bottom surface of above-mentioned each crucible and the bottom surface of single crystal seed
Substantially identical.
According to another embodiment of the present invention, above-mentioned single crystal seed has identical crystal orientation.
According to one more embodiment of the present invention, above-mentioned crystal orientation is [100] crystal orientation.
According to one more embodiment of the present invention, above-mentioned each crucible be shaped as rectangle.
According to one more embodiment of the present invention, before carrying out the brilliant step of this length, the preparation method of above-mentioned class monocrystalline
Also comprise and several heater is set lays respectively between adjacent crucible, wherein carry out comprising profit when growing brilliant step
With these heater heating crucibles.
According to one more embodiment of the present invention, before carrying out growing brilliant step, the preparation method of above-mentioned class monocrystalline is also
The lower section of the bottom central zones being contained in each crucible arranges high heat-conduction coefficient element.
According to one more embodiment of the present invention, before carrying out growing brilliant step, the preparation method of above-mentioned class monocrystalline is also
The lower section of the bottom central zones being contained in each crucible arranges high heat-conduction coefficient element and in each earthenware
The lower section in the bottom outer-edge region of crucible arranges low heat conduction coefficient element.
Accompanying drawing explanation
For the above and other purpose of the present invention, feature, advantage can be become apparent with embodiment, appended
Being described as follows of accompanying drawing:
Fig. 1 is the flow chart of the preparation method illustrating the kind monocrystalline according to one embodiment of the present invention；
Fig. 2 A is that the section of the device illustrating a kind of class monocrystalline of growing up according to one embodiment of the present invention shows
It is intended to；
Fig. 2 B is device upper depending on showing illustrating a kind of class monocrystalline of growing up according to one embodiment of the present invention
It is intended to；
Schematic diagram when Fig. 2 C is to illustrate the kind monocrystalline growth according to one embodiment of the present invention；
Fig. 3 is the section of the device illustrating a kind of class monocrystalline of growing up according to another embodiment of the present invention
Schematic diagram；
Fig. 4 is the section of the device illustrating a kind of class monocrystalline of growing up according to another embodiment of the invention
Schematic diagram；
Fig. 5 A is the section of the device of a kind of class monocrystalline of growing up illustrating a further embodiment according to the present invention
Schematic diagram；And
Fig. 5 B be the device of a kind of class monocrystalline of growing up illustrating a further embodiment according to the present invention on regard
Schematic diagram.
Detailed description of the invention
Because during tradition growth class monocrystalline, because of between single crystal seed and crystal seed mostly with the presence of crystal boundary, and lead
Cause the brilliant heavy stone used as an anchor quality variation grown up, brilliant heavy stone used as an anchor even cannot be made to maintain single crystal orientation, and processing procedure controls to be difficult to
Etc. problem.Therefore, the present invention herein proposes the preparation method of a kind monocrystalline, and it is in same long crystal furnace body
Multiple crucible is set, and single single crystal seed is set in each crucible, can reach without crystal boundary face whereby,
And it is effectively reduced the defect of class monocrystalline crystalline substance heavy stone used as an anchor, brilliant heavy stone used as an anchor quality is substantially improved.Additionally, the preparation side of the present invention
Method more can additionally arrange heater between adjacent two crucibles, and/or in the middle section of each crucible bottom
It is respectively provided with high heat-conduction coefficient element and low heat conduction coefficient element with outer edge area, can effectively control whereby
Thermal field in each crucible, promotes the control to solid-liquid interface during long crystalline substance.Therefore, except brilliant heavy stone used as an anchor can be improved
Quality, more can reduce and melt degree.
Refer to Fig. 1, Fig. 2 A Yu Fig. 2 B, wherein Fig. 1 illustrates according to one embodiment of the present invention
The flow chart of the preparation method of one kind monocrystalline, Fig. 2 A and Fig. 2 B is to illustrate according to the present invention respectively
The generalized section of the device of a kind of class monocrystalline of growing up of embodiment and upper schematic diagram.In present embodiment
In, during preparation class monocrystalline, can first carry out step 100, to provide multiple crucible 200, and by these crucibles
In 200 reative cells 204 being arranged in the body of heater 202 of same long crystal furnace, as shown in Figure 2 A.These
Crucible 200 can be arranged in reative cell 204 in the way of neighbour sets each other.Each crucible 200 comprises bottom
206 with sidewall 208, wherein sidewall 208 be built up in along the edge of bottom 206 bottom 206 on, and
Bottom 206 and sidewall 208 define long brilliant space 210.In some instances, as shown in Figure 2 B, often
Individual crucible 200 be shaped as rectangle.Rectangular crucible design, can make into the class monocrystalline crystalline substance heavy stone used as an anchor grown
For cuboid, consequently, it is possible to when wafer cuts, relatively multi-wafer can be cut out, class monocrystalline crystalline substance heavy stone used as an anchor is made to obtain relatively
Good utilization ratio, but rectangle crucible is only the explanation of preferred embodiment herein, and crucible shape is not limited to
Rectangle.
It follows that step 102 can be carried out, to place one in the long brilliant space 210 of each crucible 200
Single crystal seed 212.In each crucible 200, single crystal seed 212 is the bottom surface 214 being laid in crucible 200
On.In some instances, the size of the bottom surface 214 of each crucible 200 is compared with the bottom surface of single crystal seed 212
216 is big.For example, the length of the bottom surface 214 of each crucible 200 and width are the most relatively positioned at monocrystalline thereon
The length of the bottom surface 216 of crystal seed 212 and roomy 10mm to 100mm, the end of the most each single crystal seed 212
Every neighbouring while being separated by about 5mm with the bottom surface 214 of the crucible 200 at its place the most respectively in face 216
To 50mm.In some specific examples, the bottom surface 214 of each crucible 200 is with to be positioned at monocrystalline thereon brilliant
The size of the bottom surface 216 planting 212 is substantially identical.Additionally, in some instances, it is placed on these crucibles 200
Interior single crystal seed 212 has different crystal orientation；Or, the crystal orientation of these single crystal seeds 212 phase the most completely
With, i.e. the crystal orientation of some single crystal seeds 212 is identical, and the crystal orientation of other single crystal seeds 212 is different.One
In a little specific examples, all of single crystal seed 212 has identical crystal orientation, such as [100] crystal orientation.
After completing the arranging of single crystal seed 212, step 104 can be carried out, with the list in each crucible 200
Silicon material 218 is set in Jingjing kind 212.These silicon material 218 can for example, silico briquette.Then, long crystalline substance can be carried out
Step 106, to utilize mode of heating to melt the silicon material 218 in each crucible 200.In long brilliant step
During 106, through the heterogeneity phantom in the reative cell 204 controlling body of heater 202, make silicon material 218 by upper and
Lower thawing.Further, the melting level of silicon material 218 in each crucible 200 is controlled at single crystal seed 212
Upper surface at, it is to avoid melt and wear all or the single crystal seed 212 of local.
Referring to Fig. 2 A and Fig. 2 C, wherein Fig. 2 C illustrates according to one embodiment of the present invention
Schematic diagram during one kind monocrystalline growth.When the silicon material 218 in each crucible 200 has melted to single crystal seed
During position at the upper surface of 212, the operating condition of the reative cell 204 of body of heater 202 can be switched and grow up
Brilliant pattern.Now, silicon wafer will be along the lattice of single crystal seed 212 in the long brilliant space 210 of crucible 200
Middle growth, and obtain class monocrystalline crystalline substance heavy stone used as an anchor.During long crystalline substance, the class monocrystalline 220 of solid-state is by single crystal seed
Start at 212 up to grow up, thus now liquid-state silicon 222 meeting is above the class monocrystalline 220 of solid-state, and
Therebetween a solid-liquid interface 224 can be formed.In the present embodiment, during long crystalline substance, can control solid
Liquid interface 224 so that it is present central convex and outside is low.Controlled by such interface, tensile stress can be made to exist
Central area and compressive stress produce in outside, if so having lattice defect, such stress distribution can make these
Lattice defect is formed at the outer side edges of class monocrystalline 220.After completing class monocrystalline crystalline substance heavy stone used as an anchor, it will usually by class monocrystalline
The Partial Resection in the outside of brilliant heavy stone used as an anchor, thus the defect outside class monocrystalline 220 can be will be formed in and excise in the lump.Therefore,
The defect of class monocrystalline 220 finished product can be reduced, and the quality of class monocrystalline 220 can be substantially improved.
Referring to Fig. 1 and Fig. 3, wherein Fig. 3 is to illustrate according to another embodiment of the present invention
Plant the generalized section of the device of growth class monocrystalline.In the present embodiment, can be in long brilliant step 106
Before carrying out, high heat-conduction coefficient unit is set below the middle section 228 of the bottom 206 of each crucible 200
Part 226.These high heat-conduction coefficient elements 226 can make crucible 200 during the long crystalline substance of class monocrystalline 220
Bottom 206 middle section 228 above silicon melt soup and condense growth more quickly, can be conducive to whereby making
Solid-liquid interface 224 is in the convex and state of outside indentation of central authorities.Therefore, such device is designed with and beneficially controls admittedly
Liquid interface 224, and it is effectively reduced lattice defect, and then the quality of class monocrystalline 220 finished product can be improved.
Referring to Fig. 1 and Fig. 4, wherein Fig. 4 is to illustrate according to another embodiment of the invention
Plant the generalized section of the device of growth class monocrystalline.In the present embodiment, can be in long brilliant step 106
Before carrying out, high heat-conduction coefficient unit is set below the middle section 228 of the bottom 206 of each crucible 200
Part 226 and low heat conductivity is set in the lower section of the outer edge area 230 of the bottom 206 of each crucible 200
Coefficient element 232.In some instances, as shown in Figure 4, the low heat conduction coefficient element 232 of these crucibles
A structure sheaf can be integrated into, and high heat-conduction coefficient element 226 can be embedded at low heat conduction coefficient element 232
Structure sheaf in.During the long crystalline substance of class monocrystalline 220, these high heat-conduction coefficient elements 226 can make earthenware
Silicon above the middle section 228 of the bottom 206 of crucible 200 melts soup and condenses growth more quickly, and these are low
Coefficient of heat conduction element 232 can make the silicon above the outer edge area 230 of the bottom 206 of crucible 200 melt soup relatively
Central authorities condense growth lentamente, can be more beneficial for whereby controlling solid-liquid interface 224 in the convex and outside indentation of central authorities
State.Therefore, the design of such device is more conducive to control solid-liquid interface 224, and can more effectively reduce
Lattice defect, and then the lifting of the quality of class monocrystalline 220 finished product can be more conducive to.
Referring to Fig. 1, Fig. 5 A Yu Fig. 5 B, wherein Fig. 5 A and Fig. 5 B is to illustrate respectively according to this
The generalized section of the device of a kind of class monocrystalline of growing up of a further embodiment of invention and upper schematic diagram.?
In present embodiment, can be before long brilliant step 106 be carried out, first volume between two adjacent crucibles 200 in office
Outer heater 234 is set.Owing to crucible 200 neighbour each other sets arrangement, and these heaters 234 are to set respectively
Putting between adjacent two crucibles 200, therefore these heaters 234 lay respectively at the side of each crucible 200,
The side wall 208 of the most each crucible 200 is other.In some instances, as shown in Figure 5A, these heaters 234
For graphite rod.As shown in Figure 5 B, these heaters 234 can be arranged separately between adjacent two crucibles 200.
Or, these heaters 234 can be respectively around the most each crucible 200.After completing the arranging of heater 234,
These heaters 234 can be utilized from the side of each crucible 200 during the long crystalline substance of class monocrystalline 220
Carry out heating crucible 200, so as to assisting to control solid-liquid interface 224 during long crystalline substance, in order to reducing class monocrystalline
The lattice defect of 220, and then reach to promote the effect of the quality of class monocrystalline 220 finished product.
From above-mentioned embodiment, an advantage of the present invention is just because the preparation of the class monocrystalline of the present invention
Method is to arrange multiple crucible in the body of heater of same long crystal furnace, and respectively arranges a monocrystalline in each crucible
Crystal seed, therefore can reach the purpose without crystal boundary face, and can reduce the defect of brilliant heavy stone used as an anchor when long crystalline substance.
From above-mentioned embodiment, another advantage of the present invention is just because the system of the class monocrystalline of the present invention
Preparation Method can arrange heater between adjacent crucible, so can effectively control each earthenware during long crystalline substance
Thermal field in crucible, and then accurate can control long brilliant solid-liquid interface.
From above-mentioned embodiment, the another advantage of the present invention is just because the system of the class monocrystalline of the present invention
Preparation Method can arrange high heat-conduction coefficient element in the lower section of the bottom central zones of each crucible, or can be extra
Low heat conduction coefficient element is set then at the lower section in the bottom outer-edge region of crucible, can more effectively control whereby
Thermal field in each crucible, and control long brilliant solid-liquid interface more accurately so that solid-liquid interface presents centre
Convex and outside is low, so that the outside of solid-liquid interface is tensile stress, and then the defect in crystal boundary face can be reduced.By
Effectively control can be obtained in solid-liquid interface, be thus advantageous to reduce and melt degree, it is to avoid the monocrystalline of regional area
Crystal seed is melted light.
From above-mentioned embodiment, yet another advantage of the invention is just because the class monocrystalline in the present invention
In preparation method, each crucible can be rectangle, therefore when wafer cuts, brilliant heavy stone used as an anchor can be made to obtain more effective
The utilization of rate.
Although the present invention is disclosed above with embodiment, so it is not limited to the present invention, any in this skill
In art field have usually intellectual, without departing from the spirit and scope of the present invention, when can make various more
Moving and retouching, therefore protection scope of the present invention is when being defined in the range of standard depending on appending claims.
Claims (9)
1. the preparation method of a kind monocrystalline, it is characterised in that comprise:
Multiple crucible is set in a body of heater；
In each described crucible, a single crystal seed is set；
One silicon material is set in each described crucible on this single crystal seed；And
Carry out a long brilliant step, to utilize this silicon material in each described crucible to form a class with this single crystal seed
Monocrystalline crystalline substance heavy stone used as an anchor.
The preparation method of class monocrystalline the most according to claim 1, it is characterised in that each described crucible
The length of the bottom surface of the length of bottom surface and wide the most relatively this single crystal seed and roomy 10mm to 100mm.
The preparation method of class monocrystalline the most according to claim 1, it is characterised in that each described crucible
Bottom surface is equivalently-sized with the bottom surface of this single crystal seed.
The preparation method of class monocrystalline the most according to claim 1, it is characterised in that described single crystal seed has
There is an identical crystal orientation.
The preparation method of class monocrystalline the most according to claim 4, it is characterised in that this crystal orientation is that [100] are brilliant
To.
The preparation method of class monocrystalline the most according to claim 1, it is characterised in that each described crucible
It is shaped as rectangle.
The preparation method of class monocrystalline the most according to claim 1, it is characterised in that in carrying out the brilliant step of this length
Before Zhou, also comprise and multiple heater is set lays respectively between adjacent described crucible, wherein carry out this length brilliant
Comprise during step and utilize described heater to heat described crucible.
The preparation method of class monocrystalline the most according to claim 1, it is characterised in that in carrying out the brilliant step of this length
Before Zhou, the lower section of the bottom central zones being also contained in each described crucible arranges a high heat-conduction coefficient unit
Part.
The preparation method of class monocrystalline the most according to claim 1, it is characterised in that in carrying out the brilliant step of this length
Before Zhou, also comprise:
In the lower section of the bottom central zones of each described crucible, one high heat-conduction coefficient element is set；And
In the lower section in the bottom outer-edge region of each described crucible, one low heat conduction coefficient element is set.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104100431A TWI541390B (en) | 2015-01-07 | 2015-01-07 | Method for manufacturing mono-like silicon |
| TW104100431 | 2015-01-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105986309A true CN105986309A (en) | 2016-10-05 |
Family
ID=56985048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510045470.4A Pending CN105986309A (en) | 2015-01-07 | 2015-01-29 | Method for preparing mono-like crystal |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105986309A (en) |
| TW (1) | TWI541390B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106854774A (en) * | 2016-12-30 | 2017-06-16 | 江西赛维Ldk太阳能高科技有限公司 | One species monocrystal silicon and preparation method thereof and a species monocrystalline silicon cast ingot stove |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101772596A (en) * | 2007-06-06 | 2010-07-07 | 弗赖贝格化合物原料有限公司 | Be used for making crystalline apparatus and method and single crystal by raw-material melt |
| CN102268724A (en) * | 2011-07-28 | 2011-12-07 | 英利能源（中国）有限公司 | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell |
| CN102703965A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Method for reducing crystal defects of ingot-casting silicon single crystal |
| CN202808987U (en) * | 2012-07-06 | 2013-03-20 | 无锡中硅科技有限公司 | Large-sized single crystal seed |
| CN103060892A (en) * | 2012-12-26 | 2013-04-24 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal splicing method used for monocrystal-like silicone cast ingot |
| CN103114324A (en) * | 2011-11-16 | 2013-05-22 | 茂迪股份有限公司 | Crystal growth method and crystal growth furnace using same |
| CN103628126A (en) * | 2012-08-21 | 2014-03-12 | 浙江昱辉阳光能源有限公司 | Manufacturing method for monocrystalloid crystalline silica ingot and polysilicon ingot furnace |
| CN103757689A (en) * | 2013-12-31 | 2014-04-30 | 浙江大学 | Method for casting monocrystalline silicon by inducing growth utilizing monocrystalline silicon seed and product |
| CN103952756A (en) * | 2014-05-08 | 2014-07-30 | 江西赛维Ldk太阳能高科技有限公司 | Bonding and splicing method of seed crystals for monocrystal silicon-like cast ingots and crucible for casting ingot |
-
2015
- 2015-01-07 TW TW104100431A patent/TWI541390B/en not_active IP Right Cessation
- 2015-01-29 CN CN201510045470.4A patent/CN105986309A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101772596A (en) * | 2007-06-06 | 2010-07-07 | 弗赖贝格化合物原料有限公司 | Be used for making crystalline apparatus and method and single crystal by raw-material melt |
| CN102268724A (en) * | 2011-07-28 | 2011-12-07 | 英利能源（中国）有限公司 | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell |
| CN103114324A (en) * | 2011-11-16 | 2013-05-22 | 茂迪股份有限公司 | Crystal growth method and crystal growth furnace using same |
| CN102703965A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Method for reducing crystal defects of ingot-casting silicon single crystal |
| CN202808987U (en) * | 2012-07-06 | 2013-03-20 | 无锡中硅科技有限公司 | Large-sized single crystal seed |
| CN103628126A (en) * | 2012-08-21 | 2014-03-12 | 浙江昱辉阳光能源有限公司 | Manufacturing method for monocrystalloid crystalline silica ingot and polysilicon ingot furnace |
| CN103060892A (en) * | 2012-12-26 | 2013-04-24 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal splicing method used for monocrystal-like silicone cast ingot |
| CN103757689A (en) * | 2013-12-31 | 2014-04-30 | 浙江大学 | Method for casting monocrystalline silicon by inducing growth utilizing monocrystalline silicon seed and product |
| CN103952756A (en) * | 2014-05-08 | 2014-07-30 | 江西赛维Ldk太阳能高科技有限公司 | Bonding and splicing method of seed crystals for monocrystal silicon-like cast ingots and crucible for casting ingot |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106854774A (en) * | 2016-12-30 | 2017-06-16 | 江西赛维Ldk太阳能高科技有限公司 | One species monocrystal silicon and preparation method thereof and a species monocrystalline silicon cast ingot stove |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI541390B (en) | 2016-07-11 |
| TW201625822A (en) | 2016-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102268724B (en) | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell | |
| CN102277618B (en) | Polysilicon ingot, manufacturing method and growing furnace thereof, as well as bottom plate and solar cell of growing furnace | |
| CN202440564U (en) | Monocrystalline-silicon-like ingot furnace and seed crystals used by same | |
| CN102392300A (en) | Production method of solar energy level polysilicon ingot with crystalline grains arranged regularly | |
| CN102776560B (en) | Polycrystal silicon ingot and preparation method thereof and polysilicon chip | |
| CN103320853B (en) | A kind of seed crystal laying method, the method casting mono-like silicon ingot and quasi-monocrystalline silicon | |
| CN104088014B (en) | A kind of bar-shaped sapphire crystal growth equipment and growing method thereof | |
| CN102877129A (en) | Crystalline silicon and preparation method thereof | |
| CN103806101A (en) | Growth method and equipment of square sapphire crystal | |
| CN110295391A (en) | The preparation method of crystalline silicon ingot | |
| CN107523858A (en) | A kind of seed crystal laying method, the casting method of class monocrystal silicon and class monocrystalline silicon piece | |
| CN103397379A (en) | High-efficiency polycrystalline silicon ingot casting furnace | |
| CN103628127A (en) | DSS (directional solidification system) quasi-monocrystal silicon growth furnace and growth method of quasi-monocrystal silicon | |
| CN102965727A (en) | Polycrystalline silicon ingot and casting method thereof | |
| CN103255477B (en) | The growing method of a kind of shaped sapphire crystal and equipment | |
| CN201817570U (en) | Device for manufacturing single crystal ingots through directional solidification method | |
| CN103469304B (en) | Branched shaping sapphire crystallization device and long crystal method thereof | |
| CN103890240A (en) | System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source | |
| CN105986309A (en) | Method for preparing mono-like crystal | |
| CN104294358B (en) | The preparation method and polycrystal silicon ingot of a kind of polycrystal silicon ingot | |
| CN103590096B (en) | The method of seed crystal Bock Altitude in ingot furnace and control class single crystal casting process | |
| CN103628126A (en) | Manufacturing method for monocrystalloid crystalline silica ingot and polysilicon ingot furnace | |
| CN206070039U (en) | A kind of thermal field structure of single crystal silicon ingot furnace | |
| CN102653881A (en) | Method for casting large-grained silicon ingot | |
| KR101196378B1 (en) | Manufacturing equipment for polysilicon ingot comprising multi-crucible |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161005 |