CN110295391A - The preparation method of crystalline silicon ingot - Google Patents
The preparation method of crystalline silicon ingot Download PDFInfo
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- CN110295391A CN110295391A CN201910703334.8A CN201910703334A CN110295391A CN 110295391 A CN110295391 A CN 110295391A CN 201910703334 A CN201910703334 A CN 201910703334A CN 110295391 A CN110295391 A CN 110295391A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The present invention relates to a kind of preparation methods of crystalline silicon ingot, comprising: is laid with single crystal seed in the bottom center of crucible, forms single crystal seed layer；It is successively laid with multiple seed crystals item respectively in the surrounding of single crystal seed layer, the side crystal orientation to contact with each other between seed crystal item and seed crystal and adjacent seed crystal item is all different；Region between seed crystal item and the side wall of crucible is laid with polycrystalline seed crystal, forms polycrystalline seed layer；Silicon material is set on single crystal seed layer, seed crystal item and polycrystalline seed layer, and heating fusing controls the temperature in crucible, makes single crystal seed layer, seed crystal item and the endless running down of polycrystalline seed layer；The temperature gradient that is stepped up from bottom to top is formed, crystal orientation directional solidification of the silicon liquid in central area along single crystal seed is made, fringe region is grown in polycrystalline seed layer forming core, and it is polycrystalline crystalline silicon ingot that obtain centre, which be monocrystalline edge,.The growth of fringe region polycrystalline is stopped by adjacent seed crystal item, has obstructed polycrystalline and has grown to central area, increased monocrystalline area, it is wrong to improve side spindle position.
Description
Technical field
The present invention relates to solar energy photovoltaic material preparation fields, and in particular to a kind of preparation method of crystalline silicon ingot.
Background technique
Casting monocrystalline silicon inherits the advantages of pulling of silicon single crystal and casting polysilicon, and it is respective scarce to overcome two ways
Point, it is receive more and more attention.
In casting monocrystalline silicon, needs to be laid with a certain amount of single crystal seed in the bottom of crucible, be laid with above single crystal seed
Silicon material controls the endless running down of seed crystal, so that crystal is in the single crystal seed of endless running down during silicon material heating fusing
Grow into casting single crystal.However, since the sidewall edge temperature close to crucible is lower, i.e., being imitated in cold wall in crystal growing process
Should under, silicon solution is grown to polycrystalline in crucible wall crystallisation by cooling, with the growth of silicon ingot, polycrystalline also along crucible wall to
On, due to solid liquid interface temperature difference, polycrystalline is also grown to silicon liquid central area, as a result leads to the reduction of monocrystalline area, and therewith
The dislocation density of generation is higher.
Summary of the invention
Based on this, it is necessary to aiming at the problem that casting single crystal side wall is easy growth polycrystalline, propose a kind of system of crystalline silicon ingot
Preparation Method.
A kind of preparation method of crystalline silicon ingot, comprising the following steps:
It is laid with single crystal seed in the bottom center of crucible, forms single crystal seed layer；
It is successively laid with multiple seed crystals respectively along the direction far from the single crystal seed layer in the surrounding of the single crystal seed layer
Item, the side crystal orientation to contact with each other between the seed crystal item and seed crystal and adjacent seed crystal item are all different；
Region between the seed crystal item and the crucible wall is laid with polycrystalline seed crystal, forms polycrystalline seed layer；
Silicon material is set on the single crystal seed layer, seed crystal item and polycrystalline seed layer, and heating fusing controls in the crucible
Temperature, make the single crystal seed layer, seed crystal item and the endless running down of polycrystalline seed layer；
The temperature in the crucible is controlled, forms the temperature being stepped up from bottom to top along the direction perpendicular to crucible bottom
Gradient makes crystal orientation directional solidification of the silicon liquid of fusing in central area along the single crystal seed, and fringe region is in polycrystalline seed layer
Forming core growth, it is polycrystalline crystalline silicon ingot that obtain centre, which be monocrystalline edge,.
The crystalline silicon ingot as made from the preparation method of above-mentioned crystalline silicon, centre are monocrystalline, and edge is polycrystalline, improves side
The transfer efficiency of edge silicon wafer overcomes the relatively low problem of casting monocrystalline silicon edge silicon wafer efficiency.During casting single crystal, side
Polycrystalline growth in edge region is stopped by adjacent seed crystal item, grows so having obstructed polycrystalline to central area, increases monocrystalline
Area improves side spindle position mistake, improves the yield of single furnace monocrystalline.
The length of the seed crystal item is identical as the length of the single crystal seed in one of the embodiments,.
The seed crystal item is cuboid in one of the embodiments, and width is 3mm~25mm, the single crystal seed layer
The seed crystal item of every side is arranged 2 layers or more in the direction far from the single crystal seed layer.
The side crystal orientation that the adjacent seed crystal item contacts with each other in one of the embodiments, forms 3~90 degree of angle.
The angle is 30 degree in one of the embodiments,.
The height of the single crystal seed layer is 5mm~30mm in one of the embodiments,.
The region between the seed crystal item and the side wall of the crucible is laid with polycrystalline in one of the embodiments,
Seed crystal, the polycrystalline seed crystal include short grained silicon raw material, silicon powder or polysilicon block.
The cross sectional shape of the single crystal seed is rectangle in one of the embodiments,.
The vertical crystal orientation of cutting of the single crystal seed is<100>in one of the embodiments,.
The region between the seed crystal item and the crucible wall is laid with polycrystalline seed crystal in one of the embodiments,
Formed polycrystalline seed layer the step of include:
It is laid with the small item of monocrystalline respectively in four vertex of the figure that the surrounding seed crystal item of the single crystal seed layer connects into；
Polycrystalline particle is laid between the small item of the monocrystalline and the side wall of the crucible.
Detailed description of the invention
Fig. 1 is the flow chart of the preparation method of the crystalline silicon ingot of the embodiment of the present invention；
Fig. 2 be the single crystal seed of one embodiment of the invention, seed crystal item, polycrystalline seed crystal the bottom of crucible paving mode
Schematic diagram；
Fig. 3 is the schematic top plan view of the paving mode of embodiment illustrated in fig. 2；
Fig. 4 is that the PL of conventional crystal silicon ingot schemes；
Fig. 5 is the PL figure of the crystalline silicon ingot of the embodiment of the present invention 1；
Fig. 6 is the PL figure of the crystalline silicon ingot of the embodiment of the present invention 2；
Fig. 7 is the PL figure of the crystalline silicon ingot of the embodiment of the present invention 3；
Fig. 8 is the PL figure of the crystalline silicon ingot of the embodiment of the present invention 4.
Specific embodiment
Fig. 1 to Fig. 3 is please referred to, the preparation method of the crystalline silicon ingot of an embodiment includes the following steps.
Step S110, it is laid with single crystal seed in the bottom center of crucible, forms single crystal seed layer.Referring to FIG. 2, in crucible
Bottom central zones be first laid with single crystal seed 20, form single crystal seed layer.Single crystal seed layer is used to prepare drawing for casting single crystal
Crystal layer.
The shape and size of single crystal seed layer do not limit, such as single crystal seed layer can be 101 size of bottom with crucible
The bulky single crystal seed crystal essentially identical with shape can also be spliced by muti-piece seed crystal.It is spelled when by the single crystal seed 20 of muti-piece
When connecing, the crystal orientation of single crystal seed 20 is unlimited, and single crystal seed 20 is laid on the bottom center of crucible in a manner of compact arranged,
Keep the gap between single crystal seed 20 as small as possible, to reduce the crystal boundary introduced by seed crystal gap and dislocation.Preferably, often
The vertical crystal orientation of a single crystal seed be all it is identical, preferably<100>.Single crystal seed 20 it is preferably rectangular in shape.Generally,
The altitude range of single crystal seed layer is 5mm~30mm.Herein, height finger element is perpendicular to the ruler in 10 bottom direction of crucible
It is very little.
Step S120, it is successively laid with respectively in the surrounding of the single crystal seed layer along the direction far from the single crystal seed layer
Multiple seed crystals item, the side crystal orientation to contact with each other between the seed crystal item and seed crystal and adjacent seed crystal item are all different.
After being laid with single crystal seed layer, as shown in Figures 2 and 3, multiple seed crystals item 30 is centered around the surrounding paving of single crystal seed layer
If between multiple seed crystals item 30 and single crystal seed, close-packed arrays each other between multiple seed crystals item 30, between minimizing
Gap.Seed crystal item 30 arrange direction be around crucible bottom side wall 102 from single crystal seed 20 to crucible direction.
Step S130, the region between the seed crystal item and the crucible wall is laid with polycrystalline seed crystal, forms polycrystalline seed
Crystal layer.On the bottom of crucible 101, the region between seed crystal item 30 and the side wall 102 of crucible re-lays polycrystalline seed crystal 40, shape
At polycrystalline seed layer.The source of polycrystalline seed crystal does not limit, and such as can be the virgin polycrystalline silicon grown using Siemens Method.
The polycrystalline seed crystal includes short grained silicon raw material, silicon powder or polysilicon block.Polycrystalline seed layer can be by following
Method is formed.With reference to Fig. 3, in a specific example, single crystal seed layer is spliced by 6 × 6 single crystal seeds 20, monocrystalline seed
The each side edge of crystal layer is spliced into a length and the consistent big seed crystal of single crystal seed layer side edge length using 6 seed crystal items 30
Item.On the direction far from single crystal seed layer, above-mentioned big seed crystal item stacking quantity is 3.As shown in figure 3, due to monocrystalline seed
After being superimposed seed crystal item 30 outside crystal layer, the figure that seed crystal item 30 connects into not is complete rectangular, has part to lack at four apex angle A
It loses.In order to preferably obstruct polycrystalline growth in top corner portion, the small item of the lesser monocrystalline of size is laid in the top corner portion
402, keep rectangle complete, polycrystalline particle 403 is then laid between seed crystal item 30, the small item 402 of monocrystalline and the side wall 102 of crucible,
As shown in figure 3, illustrating the laying condition of the small item 402 of monocrystalline at one of apex angle A.
Continued growth on the basis of silicon liquid is existing for the single crystal seed, is a kind of regrowth process, so that intermediate region can
Lattice structure identical with single crystal seed is obtained than more completely casting crystalline silicon.
Since the side crystal orientation that the step S120 seed crystal item 30 being laid with contacts with each other is different, along this in crystal growing process
Certain crystal boundary is formed, the growth of fringe region polycrystalline is stopped by adjacent seed crystal item, so having obstructed polycrystalline to center
Domain growth, increases monocrystalline area, improves side spindle position mistake, improves the quality of silicon ingot.
In the embodiment of the present invention, the length of seed crystal item 30 is not limited, but preferably, the length and monocrystalline seed of seed crystal item 30
The length of crystalline substance 20 is identical, and such seed crystal item 30 preferably single crystal seed 20 can be close to be laid with.As shown in figure 3, seed crystal item 30 is tight
It is affixed on single crystal seed 20, the length of the two is consistent.The height of seed crystal item 30 and the height of single crystal seed are consistent.
The quantity that the seed crystal item 30 of the every side of single crystal seed is laid with is two or more, can form crystal boundary, and seed crystal item
30 quantity is more, and blocking effect is better.In one preferred embodiment, in order to obtain preferable blocking polycrystalline to central area
The effect of growth obtains the casting single crystal of larger area, and the quantity that the seed crystal item 30 of the every side of single crystal seed layer is laminated is 3
Layer or more, it is preferable that seed crystal item 30 is arranged 4 layers, and seed crystal item 30 is set as cuboid, and width is 3mm~25mm.In the present embodiment,
Width refers to the size of seed crystal item 30 in the stacking direction.
Mutual width ratio does not limit when the stacking of seed crystal item 30.For example, it may be the equivalent width of each seed crystal item 30.Also
It can be with the width of each seed crystal item 30 is unequal each other.
In order to obtain the effect for preferably polycrystalline being stopped to grow to central area, seed crystal item and single crystal seed and adjacent seed crystal
The side crystal orientation to contact with each other between item 30 forms 3~90 degree of angle.Preferably, the side that adjacent seed crystal item 30 contacts with each other
Crystal orientation forms 30 degree of angle.
Step S140, silicon material, heating fusing, control are set on the single crystal seed layer, seed crystal item and polycrystalline seed layer
Temperature in the crucible makes the single crystal seed layer, seed crystal item and the endless running down of polycrystalline seed layer.
The temperature in crucible is controlled, the endless running down of single crystal seed layer is made, specific: heating makes above single crystal seed layer
Silicon material be completely melt that and the seed crystal item 30 of single crystal seed layer, surrounding and polycrystalline seed layer partially melt, such as fusing 10%~
90%, subsequently into crystal growing stage.
Step S150, the temperature in the crucible is controlled, is formed from bottom to top gradually along the direction perpendicular to crucible bottom
Raised temperature gradient, makes crystal orientation directional solidification of the silicon liquid of fusing in central area along the single crystal seed, and fringe region exists
The growth of polycrystalline seed layer forming core, it is polycrystalline crystalline silicon ingot that obtain centre, which be monocrystalline edge,.
In this step, can by way of gradually opening heat-insulation cage, or open bottom holding plates mode, perpendicular to
The bottom direction of crucible forms the temperature gradient being stepped up from bottom to top, make the silicon liquid of fusing from crucible bottom vertically
Directional solidification growth, obtaining centre using this is monocrystalline edge as polycrystalline crystalline silicon ingot.
Crystalline silicon ingot made from preparation method using above-mentioned crystalline silicon, it is polycrystalline that centre, which is monocrystalline edge, in guarantee
While heart crystal region area, the quality of edge silicon wafer is also improved, it is relatively low to overcome casting monocrystalline silicon edge silicon wafer efficiency
The problem of.During casting single crystal, the polycrystalline seed layer forming core growth that the polycrystalline of fringe region is laid in bottom, crystal boundary and
The proliferation of dislocation is stopped by adjacent seed crystal item, and this method can obstruct polycrystalline and grow to central area, while further improve side
The quality of ingot.
Further, it is stronger support beneficial effects of the present invention, it is as follows provides comparative test data:
Comparative example:
It is 157 × 157 × 10mm in the size that crucible bottom center is laid with single crystal seed, totally 36 pieces, is closely arranged with 6 × 6
Column.Gap between single crystal seed and crucible internal walls is laid with polycrystalline seed crystal.It is added in the top of single crystal seed and polycrystalline seed crystal
The polycrystalline silicon material of 800kg, heating melted, be completely melt polycrystalline silicon material, single crystal seed layer fusing 2mm height (
Enter crystal growing stage when melting 20%), obtaining centre is the casting crystalline silicon ingot that monocrystalline silicon edge is polysilicon.By opening
Side carries out photoluminescence (Photoluminescence Spectroscopy, PL) test to obtained silicon wafer, and obtained PL shines
Piece is as shown in Figure 4.It can be seen that there are a large amount of dislocations for casting single crystal intermediate region.
The embodiment of the present invention 1:
The size that single crystal seed is laid in crucible bottom center is 157 × 157 × 10mm, totally 36 pieces, is closely arranged with 6*6
Column form single crystal seed layer.Four seed crystal items are respectively set in four sides of single crystal seed, the side that seed crystal item contacts with each other is brilliant
To 30 degree of angles of formation.Seed crystal length is 157mm, width 5mm.Polycrystalline seed is laid in seed crystal item and crucible internal walls gap
Crystalline substance forms polycrystalline seed layer.
In the polycrystalline silicon material of the top of single crystal seed layer, seed crystal item and polycrystalline seed layer investment 800kg, heating is melted
Change, be completely melt polycrystalline silicon material, enters crystal growing stage in height (namely fusing 20%) of single crystal seed layer fusing 2mm,
Obtaining centre is the casting crystalline silicon ingot that monocrystalline silicon edge is polysilicon.By evolution, photoluminescence is carried out to obtained silicon wafer
(Photoluminescence Spectroscopy, PL) test, obtained PL photo are as shown in Figure 5.It can be seen that in Fig. 5,
The dislocation of casting single crystal intermediate region is significantly less than the silicon wafer of Fig. 4.
The embodiment of the present invention 2:
It is 160 × 160 × 20mm in the size that crucible bottom center is laid with single crystal seed, totally 36 pieces, is closely arranged with 6 × 6
Column form single crystal seed layer.Three seed crystal items are respectively set in four sides of single crystal seed, the side that seed crystal item contacts with each other is brilliant
To 3 degree of angles of formation.Seed crystal length is 160mm, and width is respectively 3mm, 10mm, 15mm.It is empty in seed crystal item and crucible internal walls
It is laid with polycrystalline seed crystal at gap and forms polycrystalline seed layer.
In the polycrystalline silicon material of the top of single crystal seed layer, seed crystal item and polycrystalline seed layer investment 1000kg, heating is melted
Change, be completely melt polycrystalline silicon material, enters crystal growing stage in height (namely fusing 50%) of single crystal seed layer fusing 10mm,
Obtaining centre is the casting crystalline silicon ingot that monocrystalline silicon edge is polysilicon.By evolution, photoluminescence is carried out to obtained silicon wafer
(Photoluminescence Spectroscopy, PL) test, obtained PL photo are as shown in Figure 6.It can be seen that in Fig. 6,
The dislocation of casting single crystal intermediate region is significantly less than the silicon wafer of Fig. 4.
The embodiment of the present invention 3:
It is 158 × 158 × 25mm in the size that crucible bottom center is laid with single crystal seed, totally 36 pieces, is closely arranged with 6 × 6
Column form single crystal seed layer.Four seed crystal items are respectively set in four sides of single crystal seed, the side that seed crystal item contacts with each other is brilliant
In angle of 45 degrees to shape.Seed crystal length is 158mm, width 20mm.Polycrystalline is laid in seed crystal item and crucible internal walls gap
Seed crystal forms polycrystalline seed layer.
In the polycrystalline silicon material of the top of single crystal seed layer, seed crystal item and polycrystalline seed layer investment 1100kg, heating is melted
Change, be completely melt polycrystalline silicon material, single crystal seed layer fusing 10mm height (namely fusing 40% when enter crystal growing stage,
Obtaining centre is the casting crystalline silicon ingot that monocrystalline silicon edge is polysilicon.By evolution, photoluminescence is carried out to obtained silicon wafer
(Photoluminescence Spectroscopy, PL) test, obtained PL photo are as shown in Figure 7.It can be seen that in Fig. 7,
The dislocation of casting single crystal intermediate region is significantly less than the silicon wafer of Fig. 4.
The embodiment of the present invention 4:
It is 159 × 159 × 20mm in the size that crucible bottom center is laid with single crystal seed, totally 49 pieces, is closely arranged with 7 × 7
Column form single crystal seed layer.Four seed crystal items are respectively set in four sides of single crystal seed, the side that seed crystal item contacts with each other is brilliant
To 60 degree of angles of formation.Seed crystal length is 159mm, width 5mm.Polycrystalline seed is laid in seed crystal item and crucible internal walls gap
Crystalline substance forms polycrystalline seed layer.
In the polycrystalline silicon material of the top of single crystal seed layer, seed crystal item and polycrystalline seed layer investment 1200kg, heating is melted
Change, be completely melt polycrystalline silicon material, enters crystal growing stage in height (namely fusing 25%) of single crystal seed layer fusing 5mm,
Obtaining centre is the casting crystalline silicon ingot that monocrystalline silicon edge is polysilicon.By evolution, photoluminescence is carried out to obtained silicon wafer
(Photoluminescence Spectroscopy, PL) test, obtained PL photo are as shown in Figure 8.It can be seen that in Fig. 8,
The dislocation of casting single crystal intermediate region is significantly less than the silicon wafer of Fig. 4.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of preparation method of crystalline silicon ingot, which comprises the following steps:
It is laid with single crystal seed in the bottom center of crucible, forms single crystal seed layer；
It is successively laid with multiple seed crystals item, institute respectively along the direction far from the single crystal seed layer in the surrounding of the single crystal seed layer
The side crystal orientation to contact with each other between seed crystal item and seed crystal and adjacent seed crystal item is stated to be all different；
Region between the seed crystal item and the crucible wall is laid with polycrystalline seed crystal, forms polycrystalline seed layer；
Silicon material is set on the single crystal seed layer, seed crystal item and polycrystalline seed layer, and heating fusing controls the temperature in the crucible
Degree, makes the single crystal seed layer, seed crystal item and the endless running down of polycrystalline seed layer；
The temperature in the crucible is controlled, forms the temperature ladder being stepped up from bottom to top along the direction perpendicular to crucible bottom
Degree makes crystal orientation directional solidification of the silicon liquid of fusing in central area along the single crystal seed, and fringe region is in polycrystalline seed layer shape
Nucleus growth, it is polycrystalline crystalline silicon ingot that obtain centre, which be monocrystalline edge,.
2. the preparation method of crystalline silicon ingot according to claim 1, which is characterized in that the length of the seed crystal item with it is described
The length of single crystal seed is identical.
3. the preparation method of crystalline silicon ingot according to claim 1, which is characterized in that the seed crystal item is cuboid, wide
Degree is 3mm~25mm, the seed crystal item of the every side of single crystal seed layer the direction far from the single crystal seed layer be arranged 2 layers with
On.
4. the preparation method of crystalline silicon ingot according to claim 1, which is characterized in that the adjacent seed crystal item contacts with each other
Side crystal orientation form 3~90 degree of angle.
5. the preparation method of crystalline silicon ingot according to claim 4, which is characterized in that the angle is 30 degree.
6. the preparation method of crystalline silicon ingot according to claim 1, which is characterized in that the height of the single crystal seed layer is
5mm~30mm.
7. the preparation method of crystalline silicon ingot according to claim 1, which is characterized in that the seed crystal item and the crucible
Region between side wall is laid with polycrystalline seed crystal, and the polycrystalline seed crystal includes short grained silicon raw material, silicon powder or polysilicon block.
8. the preparation method of crystalline silicon ingot according to claim 1, which is characterized in that the cross sectional shape of the single crystal seed
For rectangle.
9. the preparation method of crystalline silicon ingot according to claim 1, which is characterized in that the vertical crystal orientation of the single crystal seed
For<100>.
10. the preparation method of crystalline silicon ingot according to claim 1, which is characterized in that in the seed crystal item and the earthenware
The step of region between crucible side wall is laid with polycrystalline seed crystal, forms polycrystalline seed layer include:
It is laid with the small item of monocrystalline respectively in four vertex of the figure that the surrounding seed crystal item of the single crystal seed layer connects into；
Polycrystalline particle is laid between the small item of the monocrystalline and the side wall of the crucible.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111705358A (en) * | 2020-06-30 | 2020-09-25 | 江苏协鑫硅材料科技发展有限公司 | Cast monocrystalline silicon ingot and preparation method thereof |
| CN113293434A (en) * | 2021-05-27 | 2021-08-24 | 江苏协鑫硅材料科技发展有限公司 | Seed crystal laying method and monocrystalline silicon casting method |
| CN113882017A (en) * | 2020-07-01 | 2022-01-04 | 苏州阿特斯阳光电力科技有限公司 | Seed crystal laying method |
| CN114481319A (en) * | 2020-10-26 | 2022-05-13 | 福建新峰二维材料科技有限公司 | Cast crystalline silicon preparation method capable of reducing dislocation defects and polycrystalline proportion |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101796226A (en) * | 2007-07-20 | 2010-08-04 | Bp北美公司 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
| CN102268724A (en) * | 2011-07-28 | 2011-12-07 | 英利能源（中国）有限公司 | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell |
| CN102392300A (en) * | 2011-11-02 | 2012-03-28 | 浙江碧晶科技有限公司 | Production method of solar energy level polysilicon ingot with crystalline grains arranged regularly |
| CN102797035A (en) * | 2011-05-26 | 2012-11-28 | 浙江思博恩新材料科技有限公司 | Polycrystalline silicon ingot and preparation method thereof and solar cell |
| CN102877129A (en) * | 2012-09-11 | 2013-01-16 | 江西赛维Ldk太阳能高科技有限公司 | Crystalline silicon and preparation method thereof |
| CN104131332A (en) * | 2014-08-06 | 2014-11-05 | 江西赛维Ldk太阳能高科技有限公司 | Paving method of seed crystals, pseudo-single crystal silicon wafer and preparation method of pseudo-single crystal silicon wafer |
| CN107740185A (en) * | 2017-11-06 | 2018-02-27 | 晶科能源有限公司 | The shop fixtures method of one species single crystal seed |
| CN109097827A (en) * | 2018-07-13 | 2018-12-28 | 浙江大学 | A kind of twin crystal is to polycrystalline silicon ingot casting and preparation method thereof |
| CN109972197A (en) * | 2019-03-06 | 2019-07-05 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of monocrystalline silicon cast ingot crucible and monocrystalline silicon cast ingot method |
-
2019
- 2019-07-31 CN CN201910703334.8A patent/CN110295391A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101796226A (en) * | 2007-07-20 | 2010-08-04 | Bp北美公司 | Methods and apparatuses for manufacturing cast silicon from seed crystals |
| CN102797035A (en) * | 2011-05-26 | 2012-11-28 | 浙江思博恩新材料科技有限公司 | Polycrystalline silicon ingot and preparation method thereof and solar cell |
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