CN102925957A - Crystal growth device - Google Patents
Crystal growth device Download PDFInfo
- Publication number
- CN102925957A CN102925957A CN201110230460XA CN201110230460A CN102925957A CN 102925957 A CN102925957 A CN 102925957A CN 201110230460X A CN201110230460X A CN 201110230460XA CN 201110230460 A CN201110230460 A CN 201110230460A CN 102925957 A CN102925957 A CN 102925957A
- Authority
- CN
- China
- Prior art keywords
- crucible
- thermal field
- heat
- brilliant device
- exchange zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a crystal growth device. The crystal growth device comprises a crucible, and a heat field supply which is positioned outside the crucible and heats the crucible to form a heat field; the crucible comprises a container groove having an opening and used for accommodating a crystal growth raw material; and the heat field supply comprises a heating unit surrounding the crucible and heating the crucible, and a heat insulation unit arranged at the bottom of the heating unit, and the heat field supply can move between a first position and a second position relative to the crucible to form two heat fields having a temperature difference for the crucible. The crystal growth raw material in the crucible allows crystal growth to be controllably carried out in the heat field structures having an obvious temperature gradient in order to obtain good crystals having many twinning crystal boundaries.
Description
Technical field
The present invention relates to a kind of heating unit, refer to especially a kind of brilliant device of length that becomes long crystal to use.
Background technology
The quality of crystal bar depends on the factors such as crystal growth process, material purity, and wherein, the thermal field structure that the design of long brilliant device provides the brilliant raw material of the length of melting for after long crystal boundary face (grain interface), the crystal nucleation (nucleation) at long brilliant initial stage, the brilliant process of length in grain size (grain size) etc. direct impact is arranged, and the crystal bar quality that concerns and finally produce, therefore, be one of proposition of paying close attention to of industry in the researchdevelopment aspect the long brilliant device always.
Consult Fig. 1, the brilliant device 1 of present length comprise a crucible 11 that is used for putting long brilliant raw material 100, one around described crucible 11 arranged outside and relatively crucible 11 up or down the heating unit 12, of described crucible 11 heating is surrounded the heat transfer piece 13 of described crucible 11 and a chassis 14 of placing described heat transfer piece 13 and crucible 11.
During long crystalline substance, described heating unit 12 begins to heat to provide fixedly thermal field of 100 1 of brilliant raw materials of the length that is received in the described crucible 11, treat after 100 one-tenth molten states of long brilliant raw material, make described heating unit 12 move up with respect to described fixed crucible 11, and the thermal field that the brilliant raw material 100 of the length that makes melting causes when described crucible 11 moves along with described heating unit 12 changes (reduction of temperature) and the described heat transfer piece 13 of arranging in pairs or groups begins nucleation, long brilliant with the heat-conducting effect on chassis 14, finally obtains crystal bar.
Long brilliant device 1 is take the crystal bar of making polysilicon as example, according to research, if can be in long brilliant process, the long crystal boundary face 101 of control molten silicon raw material has the crystal plane of more smooth even dimpling, can reduce the thermal stresses of crystal, and the effect and quality of the long brilliant initial stage nucleation of control can increase the formation of twin crystal boundary (twin boundary), can help the disappearance of poor row's lattice imperfections such as (dislocation) in the long brilliant process, and obtain the better polycrystalline silicon bar of quality; But with the brilliant device 1 of above-mentioned length, because described heating unit 12 is formed to be single thermal field structure, so the long brilliant process of the silicon raw material in crucible 11, the thermograde control of thermal field is very coarse and be not easy effectively to grasp for the key factor of the isometric crystalline substance of form of nucleation or the long crystal boundary face 101 of solid-liquid.
In addition, similarly be that to prepare crystal bar with Bryman process (Bridgeman Method) then be that crucible descends away from heating unit, usually heating unit is to comprise separately fixing a top heater and a ring-type side heaters, and be engaged in the described chassis flow of cooling water device that arranges the in addition long brilliant speed that tightens control, although the primary crystallization speed of crucible bottom can promote, but identical with the brilliant device of above-mentioned length 1, thermal field control for solid phase area and solid-liquid interface is more very difficult, and the long brilliant raw material of the melting in the crucible may because of waiting from described that well heater is more and more far away so that the surface begins to solidify, add that the movement of crucible also easily causes the crucible body to shake damage, the growth of interference crystal.
In addition, for example Taiwan patent the 099205223rd, the 098132239th patent application case disclose respectively the technology that imposes special heat conductive design for the chassis and further improve long crystalloid amount.
Although, such technology has to a certain degree improvement for the brilliant process of length of control polysilicon really, but along with the height of semiconductor industry, opto-electronics is flourish, the better polycrystalline silicon bar of the quality growth requirement that is inevitable, also therefore, exploitation can provide thermograde to control the more accurately brilliant device of length of thermal field structure, is the direction of relevant dealer's main research and development.
Summary of the invention
In order to overcome defects, the invention provides the brilliant device of a kind of length, the brilliant device of described length can improve the long brilliant interface of spill, have better thermograde control.
The present invention for the technical scheme that solves its technical problem and adopt is:
The brilliant device of a kind of length comprises a crucible, and one around and be surrounded on the thermal field supply in the described crucible outside.
Described crucible comprises that one has an opening and in order to place the tank of long brilliant raw material.
During described thermal field supply start to described crucible heating and form a thermal field structure that coats described crucible, simultaneously form successively one first thermal field along described crucible tank bottom surface towards the tank opening direction, reach the second thermal field that a samming is higher than the first thermal field, and described thermal field supply can be mobile between a first location and a second position with respect to described crucible to the direction of described tank opening along the tank bottom surface of described crucible.
When described thermal field supply during in described first location, described crucible is arranged in described the second thermal field, and when described thermal field supply during in the described second position, described crucible is arranged in described the first thermal field.
The present invention also can adopt following technical measures further to realize in order to solve its technical problem:
Preferably, described thermal field supply comprises that one is surrounded on described crucible periphery and to the heating unit of described crucible heating, and one between described crucible and heating unit and be arranged at the insulating unit of described heating unit bottom, described heating unit forms the steady heat field structure during to described crucible heating, and described insulating unit defines described the first thermal field and the second thermal field with described thermal field structure separation, be that described heating unit is to described crucible heating the time, at the position that insulating unit is arranged crucible is formed the first thermal field, the position above insulating unit forms the second thermal field to crucible.
Preferably, described insulating unit is to pass coefficient range by heat to be consisted of at the material of 0.5～0.01W/mK.
Preferably, described thermal field supply is when described first location, and the top of described insulating unit is not higher than the tank bottom surface of described crucible.
Preferably, the brilliant device of length of the present invention also comprises a heat transfer piece that is arranged at described crucible outside, and described heat transfer piece comprises a conductive sole plate, and one by the upwardly extending side plate of conductive sole plate circumferential edges.
Preferably, described heat transfer piece is close to and is contacted with described crucible outer wall to increase the effect of heat conduction, insulation.
Preferably, described thermal field supply is when described first location, and the conductive sole plate of described heat transfer piece flushes with the top of described insulating unit with the joint face of crucible tank bottom surface.
Preferably, the height of described insulating unit is not less than the degree of depth of described crucible tank.
Preferably, the height of described insulating unit can be less than the degree of depth of described crucible tank.
Preferably, the heat that has of the constituent material of the conductive sole plate of described heat transfer piece passes coefficient and is not less than 100W/mK.
Preferably, the heat that has of the constituent material of the conductive sole plate of described heat transfer piece passes coefficient range at 100～250W/mK.
Preferably, the conductive sole plate of described heat transfer piece have one corresponding to described crucible bottom middle position and with contacted the first heat exchange zone of described crucible bottom, reach a heat and pass the second heat exchange zone that coefficient is lower than described the first heat exchange zone, and described the second heat exchange zone is surrounded on described the first heat exchange zone periphery.
Preferably, the heat of the side plate of described heat transfer piece passes the heat biography coefficient that coefficient is lower than the first heat exchange zone of described conductive sole plate.
Preferably, the brilliant device of length of the present invention also comprises a heat conduction strut member, and described heat conduction strut member is placed for described crucible and heat transfer piece.
Preferably, described heat conduction strut member is connected with the conductive sole plate of described heat transfer piece to help to improve described conductive sole plate for the heat exchanger effectiveness of described crucible.
The invention has the beneficial effects as follows: formed two thermal field structures of the brilliant device of length of the present invention have the following advantages:
(1) provides larger thermograde and heat-obtaining speed, to induce more twin crystal boundary (Twin Boundary), to reduce poor generation of arranging (Dislocation) defective in the crystal;
(2) more smooth, even the long crystal boundary face of dimpling makes, and crystal lattice stress reduces, defective slides onto the crystal sidewall and disappears, and then improves final crystal bar quality;
(3) more less energy-consumption;
(4) shorten the long brilliant processing procedure time;
To sum up, the effect of the long brilliant device of the present invention is, can provide two temperatures different uniform heat-fields, can control more accurately long brilliant process, and then obtain the second best in quality crystalline structure.
Description of drawings
Fig. 1 is traditional brilliant device sectional view of length;
Fig. 2 is the first preferred embodiment sectional view of the present invention;
Fig. 3 is that the present invention is the sectional view that the described thermal field supply of explanation is moved toward the described second position by described first location;
Fig. 4 is that the present invention is that the described thermal field supply of explanation is when the described second position and the relative position of described crucible;
Fig. 5 is the brilliant apparatus structure of the length of experimental group 1～4 of the present invention and the comparison diagram of tradition without the brilliant apparatus structure of length of insulating unit, the coating scope of main contrast insulating unit and position (each experimental group and the long brilliant apparatus structure sketch of tradition are shown among Fig. 5 simultaneously, are convenient to contrast more intuitively position and the coating scope of insulating unit);
Fig. 6 is the second preferred embodiment sectional view of the present invention;
Fig. 7 is the defective proportion of the obtained crystal of the present invention and the defective proportion histogram of the obtained crystal of the long brilliant device of tradition.
Embodiment
Embodiment 1: consult Fig. 2, the first preferred embodiment of the long brilliant device of the present invention comprises the heat transfer piece 5 that a thermal field supply 2, a crucible 3, are surrounded on described crucible 3 outsides, and a heat conduction strut member 6 of placing for described heat transfer piece 5 and described crucible 3.
Described crucible 3 comprises that one has opening and in order to the tank 31 of the brilliant raw material 4 of accommodating length, and described crucible 3 is arranged in described thermal field supply 2.
Described heat transfer piece 5 comprises that one is positioned at described crucible 3 bottoms and has the conductive sole plate 51 of heat conduction function, and one extended upward and around being contacted with described crucible 3 lateral circle surfaces and being incubated the side plate 52 of usefulness by described conductive sole plate 51 circumferential edges, preferably, described heat transfer piece 5 next-door neighbours also contact described crucible 3 outer walls to reach more direct heat exchange control, and the heat that the constituent material of described conductive sole plate 51 has passes coefficient and is not less than 100W/mK, be preferably the boundary between 100～250W/mK to reaching preferably heat exchanger effectiveness.
Described heat conduction strut member 6 is placed for above-mentioned crucible 3, heat transfer piece 5, has simultaneously certain heat-obtaining effect with the conductive sole plate 51 that helps improve described heat transfer piece 5 cooling efficiency for described crucible 3 bottoms, also so that the heat exchange of single unit system is more stable.
Cooperate and consult Fig. 3, Fig. 4, described thermal field supply 2 is arranged at around the described crucible 3, and can between as shown in Figure 2 first location and the second position as shown in Figure 4, move relative to described crucible 3, described thermal field supply 2 includes one around surrounding described crucible 3 and described crucible 3 being heated and the heating unit 21 of formation steady heat field structure, and one between described crucible 3 and heating unit 21 and be arranged at the insulating unit 22 of described heating unit 21 bottoms, and the heat that described insulating unit 22 has passes coefficient range between 0.5～0.01W/mK and preferably effect of heat insulation is arranged, by the insulating unit 22 that is arranged on described heating unit 21 bottoms the thermal field structure that heating unit 21 adds thermosetting is separated into one first thermal field 201 that is arranged in order towards tank 31 opening directions along tank 31 bottom surfaces of described crucible 3, and a samming is higher than the second thermal field 202 of the first thermal field 201.
Illustrate as an example of the crystal growth of polysilicon example, when described thermal field supply 2 during in described first location as shown in Figure 2, described crucible 3 is arranged in described the second thermal field 202 fully, and the silicon wafer raw material that is received in the tank 31 becomes molten state and do not begin nucleation, long brilliant.When thermal field supply 2 relative to described crucible 3 from described first location toward the second position when moving (as shown in Figure 3), molten state silicon wafer raw material in described tank 31 is because described first, two thermal fields 201,202 temperature variation of moment at the interface, and described first, two thermal fields 201,202 begin to produce the long crystal face that solid-liquid has a common boundary at the interface, and along with described first, two thermal fields 201, the travel direction growing crystal at 202 interfaces, therefore the grain growing direction of melting is that tank 31 bottoms by described crucible 3 begin and along with the travel direction of thermal field is upwards grown up, and since the good control of the thermal field temperature difference so that grow the polysilicon crystal growth aspect that can produce more twin crystal boundary (twin boundary) in the brilliant nucleation process and be shaped; Subsequently, along with the position change of the relatively described crucible 3 of thermal field supply 2, the brilliant process of above-mentioned length constantly repeats to occur, and is final so that the silicon wafer raw materials in the crucible 3 grow up to polysilicon crystal complete, better quality fully.
In addition, supplementary notes is especially, position and coating scope for described insulating unit 22, the contriver has done especially more detailed experiment simulation data and has done further research, the structure diagram of each experimental group sees Fig. 5 (main contrast shows position and the coating scope of insulating unit) for details, carries out altogether the data of one group of control group, four groups of experimental group relatively.Control group is general without insulating unit, only the brilliant apparatus structure of length of single thermal field arranged for present tradition; Experimental group 1～3rd, the present invention has insulating unit, forms the brilliant apparatus structure of length of two temperature difference thermal fields, and do variation for the height of insulating unit is cumulative, and when described thermal field supply is in first location, the top of experimental group 1～3 insulating unit all flushes with described crucible bottom surface, the enforcement aspect of described the first preferred embodiment then is the insulating unit height corresponding to experimental group 3, and namely the height of described insulating unit is not less than the degree of depth of described crucible tank; Experimental group 4 is similar to the insulating unit height of experimental group 2, but changes its height when described thermal field supply is in first location, and the top of the insulating unit of experimental group 4 is far below described crucible bottom.The experimental data arrangement is as shown in table 1 below:
Table 1:
Can be learnt by experimental result, the example of growing into this experiment polysilicon crystal, described thermal field supply 2 is when described first location, the described crucible of the hanging of described insulating unit 22 3 bottom surfaces are better to the control of thermal field, therefore can make initial long crystal boundary face edge tend to smooth, obtain the lower crystal of thermal stresses; And the size for thermograde also is higher than the apparatus structure of control group so that crystallization time is shorter, grow brilliant speed, obtain the crystalline attitude of the more length of twin crystal boundary, and then can obtain the polysilicon crystal of bulk crystal better quality.Certainly, for the crystal growth of different demands or the control of thermal field, the apical position of insulating unit is not the crucible bottom surface of must aliging, and can finely tune for individual product the variation of high and low position and the whole height of insulating unit yet.
As shown in the above description, the present invention mainly is that 3 formation of relative described crucible have first of the temperature difference by the cooperation of the heating unit 21 of described thermal field supply 2 and insulating unit 22, two thermal fields 201,202, and allow silicon wafer raw material in the described crucible 3 in long brilliant process because have first of the stable temperature difference, two thermal fields 201, during changing, 202 thermogrades in moment make the wish nucleation, the crystal seed of growing up keeps growing up under the unidirectional kenel, and first, two thermal fields 201,202 larger thermogrades are controlled lower, so that the long brilliant initial stage produces a large amount of twin crystal boundaries, finally obtain the crystal thermal stresses lower, crystal mass is better polysilicon crystal also.
Embodiment 2: consult Fig. 6, the second preferred embodiment and described first preferred embodiment of the long brilliant device of the present invention are similar, and the conductive sole plate 51 that its difference is in the heat transfer piece 5 in this second preferred embodiment is to consist of respectively one first heat exchange zone 511 and one second heat exchange zone 512 that rate of heat release differs with the material that different heat pass coefficient.Described the first heat exchange zone 511 is the corresponding described crucible 3 bottom center positions that are positioned at, the second heat exchange zone 512 that described heat biography coefficient is lower than described the first heat exchange zone 511 then is positioned at described the first heat exchange zone 511 outsides, the side plate 52 of described insulation usefulness also is to pass the material that coefficient is lower than described the first heat exchange zone 511 with heat to be formed in addition, so can so that the rate of cooling of described crucible 3 bottom center positions is higher than the both sides rate of cooling, obtain better heat exchange effect and do improvement for the heat-obtaining efficient of described crucible 3 bottom different positionss.
Consult Fig. 7, the prepared polysilicon crystal of the embodiment of the invention 1 (the first preferred embodiment) the brilliant device of described length, its foreign matter content is about 1.31%, content of crystallite approximately 0.97%, the impurity of the polysilicon crystal that the brilliant device of traditional length (seeing Fig. 1) is prepared approximately 1.66%, content of crystallite approximately 1.01%, can obviously find out because of the improvement of long crystal boundary face so that impurity ratio descends; It will be further appreciated that, with the present invention's the first preferred embodiment arrange in pairs or groups again heat transfer piece the brilliant device of embodiment 2 (the second preferred embodiment) described length that forms of specially designed conductive sole plate heat-obtaining structure, foreign matter content and the crystallite ratio of the polysilicon crystal that it is prepared more significantly are reduced to 0.22%, 0.99%, all directly checking length of the present invention brilliant device really can be by synthermal thermal field neither and unique design for crucible bottom heat conduction, and the temperature variation in the control crucible, and then obtain the crystalline structure of better quality.
In sum, the brilliant device of length of the present invention (referring to Fig. 6) mainly is that 3 formation of relative crucible have first of the temperature difference by the cooperation of the heating unit 21 of thermal field supply 2 and insulating unit 22, two thermal fields 201,202 and some heat of cooperating the conductive sole plate 51 of described heat transfer piece 5 to have pass the design of coefficient materials, and then allow silicon wafer raw material in the described crucible 3 in long brilliant process because first, two thermal fields 201,202 movement and temperature control and in nucleation, keep unidirectional during growth, twin crystal boundary forms under the more kenel and grows up, finally obtain thermal stresses lower, crystal mass is better polysilicon crystal also, therefore, really can improve the brilliant device of present length and can only carry out crystal growth with single thermal field, and cause the crystal thermal stresses produced higher, the problem that crystal mass is relatively poor is therefore really can reach purpose of the present invention.
Above-mentioned only is preferred embodiment of the present invention, and when not limiting scope of the invention process with this, the simple equivalence of namely generally doing according to claims of the present invention and specification sheets changes and modifies, and all still belongs in the scope that patent of the present invention contains.
Claims (10)
1. one kind long brilliant device, comprise crucible and thermal field supply, described crucible has tank, described tank upper end is the tank opening, described thermal field supply around and be surrounded on the described crucible outside, described thermal field supply can the direction along described tank bottom surface to described tank opening move between first location and the second position with respect to described crucible, it is characterized in that: described thermal field supply is formed with the second thermal field that the first thermal field and samming are higher than the first thermal field successively along described crucible tank bottom surface towards the tank opening direction, described thermal field supply is when described first location, described crucible is arranged in described the second thermal field, described thermal field supply is when the described second position, and described crucible is arranged in described the first thermal field.
2. the brilliant device of length according to claim 1, it is characterized in that: described thermal field supply is provided with heating unit and insulating unit, described heating unit is surrounded on described crucible periphery and to described crucible heating, described insulating unit is between described crucible and described heating unit and be arranged at described heating unit bottom, described heating unit forms the steady heat field structure during to described crucible heating, and described insulating unit is separated described thermal field structure and defined described the first thermal field and described the second thermal field.
3. the brilliant device of length according to claim 2 is characterized in that: described insulating unit is to pass coefficient range by heat to be consisted of at the material of 0.5～0.01W/mK.
4. the brilliant device of length according to claim 3, it is characterized in that: described thermal field supply is when described first location, and the top of described insulating unit is not higher than the tank bottom surface of described crucible.
5. the brilliant device of length according to claim 4 is characterized in that: be provided with the heat transfer piece that is positioned at described crucible outside, described heat transfer piece has conductive sole plate and by the upwardly extending side plate of conductive sole plate circumferential edges.
6. the brilliant device of length according to claim 5, it is characterized in that: described thermal field supply is when described first location, and the conductive sole plate of described heat transfer piece flushes with the top of described insulating unit with the joint face of crucible tank bottom surface.
7. the brilliant device of length according to claim 6 is characterized in that: it is 100～250W/mK that the heat that the constituent material of the conductive sole plate of described heat transfer piece has passes coefficient range.
8. the brilliant device of length according to claim 7, it is characterized in that: the conductive sole plate of described heat transfer piece has the first heat exchange zone and the second heat exchange zone, described the first heat exchange zone contacts corresponding to described crucible bottom middle position and with described crucible bottom, the heat of described the second heat exchange zone passes coefficient and is lower than described the first heat exchange zone, and described the second heat exchange zone is surrounded on described the first heat exchange zone periphery.
9. the brilliant device of length according to claim 8 is characterized in that: the heat of the side plate of described heat transfer piece passes the heat that coefficient is lower than the first heat exchange zone of described conductive sole plate and passes coefficient.
10. the brilliant device of length according to claim 9 is characterized in that: be provided be used to the heat conduction strut member of placing described crucible and heat transfer piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110230460.XA CN102925957B (en) | 2011-08-12 | 2011-08-12 | Crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110230460.XA CN102925957B (en) | 2011-08-12 | 2011-08-12 | Crystal growth device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102925957A true CN102925957A (en) | 2013-02-13 |
| CN102925957B CN102925957B (en) | 2015-06-17 |
Family
ID=47640877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110230460.XA Expired - Fee Related CN102925957B (en) | 2011-08-12 | 2011-08-12 | Crystal growth device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102925957B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103397379A (en) * | 2013-08-16 | 2013-11-20 | 天威新能源控股有限公司 | High-efficiency polycrystalline silicon ingot casting furnace |
| CN105926041A (en) * | 2016-05-05 | 2016-09-07 | 中国科学院合肥物质科学研究院 | Supporting device for crucible used in crystal growth of super-high temperature melt method |
| CN107338473A (en) * | 2017-07-19 | 2017-11-10 | 晶科能源有限公司 | Combine bottom plate and the polycrystalline silicon ingot or purifying furnace containing the combination bottom plate |
| WO2020087718A1 (en) * | 2018-11-02 | 2020-05-07 | 山东天岳先进材料科技有限公司 | Crucible for preparing single crystal of silicon carbide and use thereof |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1227287A (en) * | 1998-02-06 | 1999-09-01 | 索尼株式会社 | Method for monocrystal growth and growth apparatus |
| JP2001106598A (en) * | 1999-10-08 | 2001-04-17 | Toyo Commun Equip Co Ltd | Device for producing lithium tetraborate |
| US20030217689A1 (en) * | 2002-05-27 | 2003-11-27 | Canon Kabushiki Kaisha | Method of producing crystal and apparatus for producing crystal |
| US20040099205A1 (en) * | 2002-09-03 | 2004-05-27 | Qiao Li | Method of growing oriented calcium fluoride single crystals |
| CN1932085A (en) * | 2005-06-15 | 2007-03-21 | 硅电子股份公司 | Production process of silicon single crystal |
| CN101305116A (en) * | 2005-08-25 | 2008-11-12 | 晶体系统公司 | System and method for crystal growing |
| CN101323968A (en) * | 2008-07-24 | 2008-12-17 | 山东大学 | Multicomponent compounds infrared crystal growth apparatus |
| CN101555620A (en) * | 2008-04-07 | 2009-10-14 | Axt公司 | Crystal growing device and method |
| CN201395647Y (en) * | 2009-04-17 | 2010-02-03 | 江苏华盛天龙光电设备股份有限公司 | Heat apparatus for growing silicon single crystal |
| CN101914805A (en) * | 2010-09-07 | 2010-12-15 | 王楚雯 | Directional solidification furnace with improved crucible cover part |
| CN202193875U (en) * | 2011-08-12 | 2012-04-18 | 昆山中辰矽晶有限公司 | Crystal growth device |
-
2011
- 2011-08-12 CN CN201110230460.XA patent/CN102925957B/en not_active Expired - Fee Related
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1227287A (en) * | 1998-02-06 | 1999-09-01 | 索尼株式会社 | Method for monocrystal growth and growth apparatus |
| JP2001106598A (en) * | 1999-10-08 | 2001-04-17 | Toyo Commun Equip Co Ltd | Device for producing lithium tetraborate |
| US20030217689A1 (en) * | 2002-05-27 | 2003-11-27 | Canon Kabushiki Kaisha | Method of producing crystal and apparatus for producing crystal |
| US20040099205A1 (en) * | 2002-09-03 | 2004-05-27 | Qiao Li | Method of growing oriented calcium fluoride single crystals |
| CN1932085A (en) * | 2005-06-15 | 2007-03-21 | 硅电子股份公司 | Production process of silicon single crystal |
| CN101305116A (en) * | 2005-08-25 | 2008-11-12 | 晶体系统公司 | System and method for crystal growing |
| CN101555620A (en) * | 2008-04-07 | 2009-10-14 | Axt公司 | Crystal growing device and method |
| CN101323968A (en) * | 2008-07-24 | 2008-12-17 | 山东大学 | Multicomponent compounds infrared crystal growth apparatus |
| CN201395647Y (en) * | 2009-04-17 | 2010-02-03 | 江苏华盛天龙光电设备股份有限公司 | Heat apparatus for growing silicon single crystal |
| CN101914805A (en) * | 2010-09-07 | 2010-12-15 | 王楚雯 | Directional solidification furnace with improved crucible cover part |
| CN202193875U (en) * | 2011-08-12 | 2012-04-18 | 昆山中辰矽晶有限公司 | Crystal growth device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103397379A (en) * | 2013-08-16 | 2013-11-20 | 天威新能源控股有限公司 | High-efficiency polycrystalline silicon ingot casting furnace |
| CN105926041A (en) * | 2016-05-05 | 2016-09-07 | 中国科学院合肥物质科学研究院 | Supporting device for crucible used in crystal growth of super-high temperature melt method |
| CN107338473A (en) * | 2017-07-19 | 2017-11-10 | 晶科能源有限公司 | Combine bottom plate and the polycrystalline silicon ingot or purifying furnace containing the combination bottom plate |
| CN107338473B (en) * | 2017-07-19 | 2023-08-22 | 晶科能源股份有限公司 | Combined bottom plate and polycrystalline silicon ingot furnace comprising same |
| WO2020087718A1 (en) * | 2018-11-02 | 2020-05-07 | 山东天岳先进材料科技有限公司 | Crucible for preparing single crystal of silicon carbide and use thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102925957B (en) | 2015-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10253430B2 (en) | Method for preparing polycrystalline silicon ingot | |
| US9493357B2 (en) | Method of fabricating crystalline silicon ingot including nucleation promotion layer | |
| CN103014833A (en) | Preparation method of silicon ingot | |
| CN102732953A (en) | Technology and apparatus for growing single silicon carbide crystals through double seed crystal-assisted vapor transport method | |
| KR20130059272A (en) | Crystalline silicon ingot and method of fabricating the same | |
| CN102925957B (en) | Crystal growth device | |
| CN110295391A (en) | The preparation method of crystalline silicon ingot | |
| CN103806101A (en) | Growth method and equipment of square sapphire crystal | |
| CN201183846Y (en) | Thermal field structure of polycrystalline silicon casting furnace | |
| CN102272361A (en) | Systems, methods and substrates of monocrystalline germanium crystal growth | |
| CN202193875U (en) | Crystal growth device | |
| CN203393257U (en) | Ingot furnace with plurality of heat-conduction bottom plates for producing efficient polycrystalline silicon ingot | |
| CN103255477B (en) | The growing method of a kind of shaped sapphire crystal and equipment | |
| JP2000327474A (en) | Production of crystalline silicon and crucible for producing the crystalline silicon | |
| CN211497863U (en) | Crucible assembly for preparing single crystal by PVT method and crystal growth furnace | |
| TWI432617B (en) | A crystal growing installation | |
| CN104120487A (en) | Growth method and growth equipment of platelike sapphire crystals | |
| KR20130019992A (en) | Manufacturing method of high quality multicrystalline silicon ingot using monocrystalline silicon seed | |
| CN206070039U (en) | A kind of thermal field structure of single crystal silicon ingot furnace | |
| CN201183847Y (en) | Thermal field structure of polycrystalline silicon casting furnace having one layer of heat preservation strip | |
| WO2013095928A1 (en) | Method of producing bricks from a silicon ingot | |
| CN201183848Y (en) | Thermal field structure of polycrystalline silicon casting furnace having five layers of heat preservation strips | |
| TWI541390B (en) | Method for manufacturing mono-like silicon | |
| CN201183849Y (en) | Thermal field structure of polycrystalline silicon casting furnace having graphitic cooling block heat preservation strips | |
| TWI516645B (en) | Crystalline silicon ingot, manufacture thereof and silicon wafer therefrom |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150617 Termination date: 20210812 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |