CN106929908A - The processing method of one species single crystal seed - Google Patents
The processing method of one species single crystal seed Download PDFInfo
- Publication number
- CN106929908A CN106929908A CN201710145833.0A CN201710145833A CN106929908A CN 106929908 A CN106929908 A CN 106929908A CN 201710145833 A CN201710145833 A CN 201710145833A CN 106929908 A CN106929908 A CN 106929908A
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- seed
- crystal
- seed crystal
- crucible
- monocrystalline
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The processing method of one species single crystal seed, comprises the following steps：Pulling monocrystal crystal bar, head, afterbody, sidepiece silicon material are removed to it with monocrystalline excavation machine, form it into monocrystalline square rod；The part seed crystal of monocrystalline square rod is cut transversely into 100 face seed crystals, part seed crystal cuts into 110 face seed crystals, and labels respectively；Two seed crystal edge portions are chamfer respectively, the seed crystal after cutting is divided into I classes seed crystal, II class seed crystals；After beveling two kinds of seed crystals are made to fit into a plane mutually, single crystal seed carries out array laminating process after machining, one the two of plane kinds of seed crystal of formation are more smooth, do not impacted to crucible bottom；Normal laying silicon material starts ingot casting above seed crystal, and seed crystal is protected by half process of smelting during ingot casting, and final ingot casting is into class single crystal rod.The characteristics of present invention has improve production efficiency, quality, precision.
Description
Technical field
The present invention relates to the processing method of a species single crystal seed.
Background technology
Current photovoltaic industry, the conversion efficiency of monocrystalline higher than under polycrystalline, but equal conditions, the rate of return on investment of high-efficiency polycrystalline
Force monocrystalline.Class single crystal product article has conversion efficiency higher than polycrystalline, and production cost is less than polycrystalline advantage.
The existing seed crystal laying method of processing of class single crystal seed has two kinds：One kind is that Patent publication No is：CN
The predetermined angle of crystal orientation of 103320853A is set, and when this kind of way casts quasi- monocrystalline, polycrystalline silicon liquid is easier to permeate in crucible bottom
Portion, if seed crystal cutting out-of-flatness, polycrystalline causes dislocation multiplication, inculating crystal layer easily from the growth of seed crystal splicing seams during crystal growth
It is whard to control.Because inculating crystal layer has certain angle（The angle of 1 o to 24o）Silicon material overload, the angle that seed crystal is formed is to earthenware
Crucible base coat has certain damage, and serious conditions can cause silicon liquid overflow.Another kind is that publication No. is：CN 104911691A's
Seed crystal is positive and negative or rotation is placed, and this kind of method is to carry out positive and negative or rotation to the face of seed crystal 100 to place, and will not change inculating crystal layer 100
The person's character in face, head dislocation multiplication still can be serious, due to using dislocation between same crystal orientation seeding, identical crystal orientation to form superposition,
After crystal growth is to certain altitude, dislocation multiplication can be very serious, and its head dislocation multiplication can not be eliminated by technique adjustment
Problem.
The content of the invention
Its purpose of the invention is that the processing method for providing a species single crystal seed, realizes polycrystalline ingot furnace production class
While single crystal rod, even if crystal growth in traditional seed crystal laying method can also be effectively improved being adjusted by technique to certain altitude
The whole problem that can not eliminate its head dislocation multiplication, so as to be effectively improved production precision, raising efficiency and quality.
The technical scheme realized above-mentioned purpose and take, the processing method of a species single crystal seed is comprised the following steps：
（1）Pulling monocrystal crystal bar, head, afterbody, lateral region are removed to it with monocrystalline excavation machine, monocrystalline crystal bar is formed monocrystalline
Square rod；
（2）The part seed crystal of monocrystalline square rod is horizontally cut into 100 face seed crystals, part seed crystal cuts into 110 face seed crystals, and respectively
Label, 100 faces and 110 faces are two kinds of single crystal seeds of different crystal orientations；
（3）Two seed crystal edge portions are chamfer respectively with bevelling machine, the single crystal seed after beveling is two kinds of trapezium structures, is divided into
I classes seed crystal, II class seed crystals；
（4）Laying I classes seed crystal, II class seed crystals, allow after beveling two kinds of seed crystals mutually to fit into one more smooth in crucible
Plane, so as to not impacted to crucible bottom；
（5）Normal laying silicon material starts ingot casting above seed crystal in crucible, and seed crystal is protected by half process of smelting during ingot casting so that
When silicon liquid melts from top to bottom in technical process, can effectively suppress bottom nitride silica flour or the polycrystalline seeding for accidentally producing, from
And the purpose for reducing crystal ingot entirety dislocation multiplication is reached, and bottom seed crystal being formed and is protected, final ingot casting is into class single crystal rod.
The monocrystalline crystal bar size is more than or equal to 8 cun, the monocrystalline square rod 140*140*20mm of formation.
The mis-cut angle is 30-60 °, and gained I classes seed size is more than or equal to 120*80*20mm, II class seed crystal chis
It is very little more than or equal to 120*120*20mm.
Laying I classes seed crystal, II class seed crystals are that I classes seed crystal is layed in into crucible side, II class seed crystals totally 7 pieces in the crucible
Totally 42 pieces are layed in crucible opposite side, and two seeds are brilliant to be formed 7*7 arrays and be mutually 30o-60o angles and fit in crucible bottom for totally 49 pieces
The gap of 1mm-15mm is left between the seed crystal and crucible wall of laying completion as class single-crystal boule seeding source in middle position.
Half process of smelting protects the crystalline substance speed control average long of seed crystal in 0.8-1.2cm/h.
Beneficial effect
The present invention has advantages below compared with prior art.
It is an advantage of the invention that in solving existing seed crystal laying method after crystal growth is to certain altitude, dislocation increases
Growing can be very serious, and the problem of its head dislocation multiplication can not be eliminated by technique adjustment, improve the yield of production, quality,
Precision, it is reducing energy consumption, cost-effective, and with processing, operation, control is easy, environmental pollution is small the characteristics of.
Brief description of the drawings
The invention will be further described below in conjunction with the accompanying drawings.
Fig. 1 is I class seed crystal configuration diagrams in the present invention；
Fig. 2 is II class seed crystal configuration diagrams in the present invention；
Fig. 3 is 45o single crystal seed bonding structure schematic diagrames in the present invention；
Fig. 4 is bonding structure schematic diagram of the single crystal seed in crucible in the present invention.
Specific embodiment
The processing method of one species single crystal seed, as Figure 1-3, comprises the following steps：
（1）Pulling monocrystal crystal bar, head, afterbody, lateral region are removed to it with monocrystalline excavation machine, monocrystalline crystal bar is formed monocrystalline
Square rod；
（2）The part seed crystal of monocrystalline square rod is horizontally cut into 100 face seed crystals, part seed crystal cuts into 110 face seed crystals, and respectively
Label, 100 faces and 110 faces are two kinds of single crystal seeds of different crystal orientations；
（3）Two seed crystal edge portions are chamfer respectively with bevelling machine, the single crystal seed after beveling is two kinds of trapezium structures, is divided into
I classes seed crystal 1, II classes seed crystal 2；
（4）Laying I classes seed crystal 1, II classes seed crystal 2 in crucible 3, allows after beveling two kinds of seed crystals mutually to fit into one and more puts down
Whole plane, so as to not impacted to the bottom of crucible 3；
（5）Normal laying silicon material starts ingot casting above seed crystal in crucible, and seed crystal is protected by half process of smelting during ingot casting so that
When silicon liquid melts from top to bottom in technical process, can effectively suppress bottom nitride silica flour or the polycrystalline seeding for accidentally producing, from
And the purpose for reducing crystal ingot entirety dislocation multiplication is reached, and bottom seed crystal being formed and is protected, final ingot casting is into class single crystal rod.
The monocrystalline crystal bar size is more than or equal to 8 cun, the monocrystalline square rod 140*140*20mm of formation.
The mis-cut angle is 30-60 °, and gained I classes seed size is more than or equal to 120*80*20mm, II class seed crystal chis
It is very little more than or equal to 120*120*20mm.
Laying I classes seed crystal 1, II classes seed crystal 2 is that I classes seed crystal 1 is layed in into the side of crucible 3, II totally 7 pieces in the crucible 3
Class seed crystal 2 is layed in the opposite side of crucible 3 for totally 42 pieces, and two seeds are brilliant to be formed 7*7 arrays and be mutually 30o-60o angles and fit in for totally 49 pieces
The lower center position of crucible 3 leaves 1mm- as class single-crystal boule seeding source between the seed crystal and the side wall of crucible 3 of laying completion
The gap of 15mm.
Half process of smelting protects the crystalline substance speed control average long of seed crystal in 0.8-1.2cm/h.
The embodiment of the present invention is：
（1）8 cun of monocrystalline crystal bars are drawn, head is removed to 8 cun of monocrystalline crystal bars with monocrystalline excavation machine, afterbody, sidepiece silicon material makes 8 cun
Monocrystalline crystal bar forms monocrystalline square rod, forms the single crystal seed that size is 140*140*20mm；
（2）After forming square rod, part seed crystal is horizontally cut into 100 face seed crystals, and part seed crystal cuts into 110 face seed crystals, two kinds of crystalline substances
To seed crystal place respectively and label, 100 faces and 110 faces are two kinds of single crystal seeds of different crystal orientations, two kinds of patches of seed crystal
Conjunction advantageously reduces dislocation multiplication；
（3）Two kinds of crystal orientation seed crystal edge with 45o bevelling machines respectively to processing carry out 45o bevelings, the monocrystalline seed after beveling
Crystalline substance is two kinds of trapezium structures, and a kind of is the I class seed crystals of 120*80*20mm, and another kind is the II class seed crystals of 120*120*20mm, such as
Shown in accompanying drawing 1, accompanying drawing 2.
（4）Seed crystal is laid in crucible, after beveling two kinds of seed crystals is mutually fitted into a plane, form a plane
Two kinds of seed crystals it is more smooth, crucible bottom is not impacted, I classes seed crystal is layed in crucible side for totally 7 pieces, II classes brilliant totally 42
Block is layed in crucible opposite side, and two seeds are brilliant to be formed 7*7 arrays and be mutually 45o angles and fit in crucible bottom middle position for totally 49 pieces
As class single-crystal boule seeding source, the gap of 1mm-15mm, specific two kinds are left between the seed crystal and crucible wall of laying completion
The method that seed crystal is fitted and is layed in crucible, as shown in accompanying drawing 3,4.
（5）Normal laying silicon material starts ingot casting above seed crystal in crucible, and seed crystal is protected by half process of smelting during ingot casting,
Average crystalline substance speed control long is in 0.8-1.2cm/h so that when silicon liquid melts from top to bottom in technical process, can effectively suppress bottom
Portion's silicon nitride powder or the polycrystalline seeding for accidentally producing, the purpose of crystal ingot entirety dislocation multiplication are reduced so as to reach, to bottom seed crystal
Protection is formed, final ingot casting is into class single crystal rod.
Institute's crystal-pulling must be 8 cun of monocrystal rods in the embodiment of the present invention, can not otherwise produce the monocrystalline side of 140*140mm
Bar material；The single crystal seed material of normal cutting has no problem, but the single crystal seed material of transverse cuts needs its length all to protect
Hold in 140mm, can just realize slices across, make 110 face single crystal seed material；Seed crystal is protected using half process of smelting, it is necessary to seed crystal
Area is guaranteed, and otherwise easily produces polycrystalline seeding, and crystal growing stage must use more suitable speed crystalline substance long, average
Crystalline substance speed control long needs to be controlled by 0.8-1.2cm/h to too fast crystalline substance speed long；45o bevelling machines cut single crystal seed
During material, it is necessary to be directed at ends cutting, easily cut partially, deviation needs control within 2mm, and otherwise inculating crystal layer width is not reached
840mm, and can there is pine in seed crystal laminating.
Claims (5)
1. the processing method of a species single crystal seed, it is characterised in that comprise the following steps：
（1）Pulling monocrystal crystal bar, head, afterbody, lateral region are removed to it with monocrystalline excavation machine, monocrystalline crystal bar is formed monocrystalline
Square rod；
（2）The part seed crystal of monocrystalline square rod is horizontally cut into 100 face seed crystals, part seed crystal cuts into 110 face seed crystals, and respectively
Label, 100 faces and 110 faces are two kinds of single crystal seeds of different crystal orientations；
（3）Two seed crystal edge portions are chamfer respectively with bevelling machine, the single crystal seed after beveling is two kinds of trapezium structures, is divided into
I classes seed crystal, II class seed crystals；
（4）Laying I classes seed crystal, II class seed crystals, allow after beveling two kinds of seed crystals mutually to fit into one more smooth in crucible
Plane, so as to not impacted to crucible bottom；
（5）Normal laying silicon material starts ingot casting above seed crystal in crucible, and seed crystal is protected by half process of smelting during ingot casting so that
When silicon liquid melts from top to bottom in technical process, can effectively suppress bottom nitride silica flour or the polycrystalline seeding for accidentally producing, from
And the purpose for reducing crystal ingot entirety dislocation multiplication is reached, and bottom seed crystal being formed and is protected, final ingot casting is into class single crystal rod.
2. the processing method of species single crystal seed according to claim 1, it is characterised in that the monocrystalline crystal bar size
More than or equal to 8 cun, the monocrystalline square rod of formation is more than or equal to 140*140*20mm.
3. the processing method of species single crystal seed according to claim 1, it is characterised in that the mis-cut angle is
30-60 °, gained I classes seed size is more than or equal to 120*80*20mm, and II classes seed size is more than or equal to 120*120*
20mm。
4. the processing method of species single crystal seed according to claim 1, it is characterised in that laying I in the crucible
Class seed crystal, II class seed crystals are that I classes seed crystal is layed in into crucible side totally 7 pieces, and II classes seed crystal is layed in crucible opposite side for totally 42 pieces,
Two seeds are brilliant to be formed 7*7 arrays and is mutually 30o-60o angles and fits in crucible bottom middle position as class single-crystal boule for totally 49 pieces
Seeding source, leaves the gap of 1mm-15mm between the seed crystal and crucible wall of laying completion.
5. the processing method of species single crystal seed according to claim 1, it is characterised in that half process of smelting protects seed
Brilliant crystalline substance speed control average long is in 0.8-1.2cm/h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710145833.0A CN106929908A (en) | 2017-03-13 | 2017-03-13 | The processing method of one species single crystal seed |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710145833.0A CN106929908A (en) | 2017-03-13 | 2017-03-13 | The processing method of one species single crystal seed |
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| Publication Number | Publication Date |
|---|---|
| CN106929908A true CN106929908A (en) | 2017-07-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710145833.0A Pending CN106929908A (en) | 2017-03-13 | 2017-03-13 | The processing method of one species single crystal seed |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111267248A (en) * | 2020-03-12 | 2020-06-12 | 常州时创能源股份有限公司 | Preparation method of non-100 crystal orientation monocrystalline silicon wafer |
| CN111364097A (en) * | 2020-04-15 | 2020-07-03 | 晶科能源有限公司 | Monocrystalline silicon seed crystal, silicon ingot, silicon block and silicon wafer of directionally solidified ingot casting, and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103060892A (en) * | 2012-12-26 | 2013-04-24 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal splicing method used for monocrystal-like silicone cast ingot |
| CN103305902A (en) * | 2012-03-06 | 2013-09-18 | 太阳世界创新有限公司 | Method for producing silicon ingots |
| CN103320853A (en) * | 2012-03-19 | 2013-09-25 | 镇江荣德新能源科技有限公司 | Seed crystal laying method, method for casting mono-like silicon ingot and Mono-like Silicon wafer |
| CN104818528A (en) * | 2015-04-15 | 2015-08-05 | 南通大学 | Seed crystal splicing structure applicable to directional solidification like single crystal silicon cast ingot |
-
2017
- 2017-03-13 CN CN201710145833.0A patent/CN106929908A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103305902A (en) * | 2012-03-06 | 2013-09-18 | 太阳世界创新有限公司 | Method for producing silicon ingots |
| CN103320853A (en) * | 2012-03-19 | 2013-09-25 | 镇江荣德新能源科技有限公司 | Seed crystal laying method, method for casting mono-like silicon ingot and Mono-like Silicon wafer |
| CN103060892A (en) * | 2012-12-26 | 2013-04-24 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal splicing method used for monocrystal-like silicone cast ingot |
| CN104818528A (en) * | 2015-04-15 | 2015-08-05 | 南通大学 | Seed crystal splicing structure applicable to directional solidification like single crystal silicon cast ingot |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111267248A (en) * | 2020-03-12 | 2020-06-12 | 常州时创能源股份有限公司 | Preparation method of non-100 crystal orientation monocrystalline silicon wafer |
| CN111364097A (en) * | 2020-04-15 | 2020-07-03 | 晶科能源有限公司 | Monocrystalline silicon seed crystal, silicon ingot, silicon block and silicon wafer of directionally solidified ingot casting, and preparation method and application thereof |
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