CN111267248A - Preparation method of non-100 crystal orientation monocrystalline silicon wafer - Google Patents
Preparation method of non-100 crystal orientation monocrystalline silicon wafer Download PDFInfo
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- CN111267248A CN111267248A CN202010170383.2A CN202010170383A CN111267248A CN 111267248 A CN111267248 A CN 111267248A CN 202010170383 A CN202010170383 A CN 202010170383A CN 111267248 A CN111267248 A CN 111267248A
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Abstract
The invention discloses a preparation method of a non-100 crystal orientation monocrystalline silicon wafer, which comprises the following steps: cutting the silicon single crystal rod into an oblique quadrangular prism-shaped silicon block; the bottom surface of the silicon block is vertical to the axis of the single crystal silicon rod; the four sides of the silicon block are divided into two pairs: a pair of first side surfaces parallel to each other and perpendicular to the bottom surface, and a pair of second side surfaces parallel to each other and inclined with respect to the bottom surface; and slicing the silicon block in a direction parallel to the second side surface, wherein the sliced silicon wafer is a monocrystalline silicon wafer with a non-100 crystal orientation. The method can prepare the non-100 crystal orientation monocrystalline silicon wafer with the diameter of 210mm multiplied by 210mm by taking the monocrystalline silicon rod with the diameter of 240mm as a raw material.
Description
Technical Field
The invention relates to a preparation method of a monocrystalline silicon wafer with an amorphous 100 crystal orientation.
Background
The silicon single crystal wafer is generally cut from a silicon single crystal rod having a crystal orientation of 100, and the resulting silicon single crystal wafer is generally a silicon single crystal wafer having a crystal orientation of 100.
With the development of solar cell technology, a non-100 crystal orientation monocrystalline silicon wafer is also in demand, so that a method for preparing a non-100 crystal orientation monocrystalline silicon wafer needs to be developed.
Disclosure of Invention
The invention aims to provide a preparation method of a non-100 crystal orientation monocrystalline silicon wafer, which comprises the following steps:
cutting a silicon block from the silicon single crystal rod; the silicon block is in a quadrangular prism shape, the bottom surface of the silicon block is vertical to the axis of the single crystal silicon rod, and the bottom surface is rectangular; the four sides of the silicon block are divided into two pairs: a pair of first side surfaces parallel to each other and perpendicular to the bottom surface, and a pair of second side surfaces parallel to each other and inclined with respect to the bottom surface;
cutting a silicon wafer from the silicon block; and slicing the silicon block in a direction parallel to the second side surface, wherein the sliced silicon wafer is a monocrystalline silicon wafer with a non-100 crystal orientation.
Preferably, the single crystal silicon rod is a 100-crystal-orientation single crystal silicon rod.
Preferably, the included angle between the second side surface and the bottom surface is not more than 60 degrees.
Preferably, the bottom surface is rectangular, the first side surface is parallel to the wide side of the bottom surface, and the second side surface is parallel to the long side of the bottom surface.
Preferably, the length of the side edge of the silicon block is the same as the length of the long side of the bottom surface.
Preferably, the length of the side edge of the silicon block is one half, one third, one fourth, one fifth or one sixth of the length of the long side of the bottom surface.
Preferably, four borderlines of the silicon block between the pair of second side surfaces are chamfered, and then the silicon block is cut into silicon wafers.
Preferably, the outer diameter of the single crystal silicon rod is not more than 240 mm.
Preferably, the length of the long side of the bottom surface is 210 mm.
Preferably, when the monocrystalline silicon rod is cut into silicon blocks, a boundary material is generated; and further cutting the edge skin material into silicon wafers.
According to the invention, a silicon block is cut from a 100-crystal-orientation single crystal silicon rod, the bottom surface of the silicon block is vertical to the axis of the single crystal silicon rod, so that the bottom surface of the silicon block is also in a 100-crystal orientation, and the second side surface of the silicon block is inclined relative to the bottom surface, so that the second side surface of the silicon block is in a non-100-crystal orientation, and a silicon wafer is prepared by slicing the silicon block, and the slicing direction is parallel to the second side surface, so that a single crystal silicon wafer obtained by slicing the silicon block is also in a non.
The included angle between the second side face and the bottom face is not more than 60 degrees, so that the texturing of the non-100 crystal orientation monocrystalline silicon wafer is facilitated to form an inclined pyramid textured structure, and the inclined pyramid textured structure is different from the existing regular pyramid textured structure and has a certain application value.
The length of the side edge of the silicon block is the same as that of the long side of the bottom surface, namely the length of the second side surface is square, so that the monocrystalline silicon wafer obtained by slicing the silicon block is a square wafer.
The length of the side edge of the silicon block is one half, one third, one fourth, one fifth or one sixth of the length of the long side of the bottom surface, that is, the second side surface is rectangular, so that the single crystal silicon wafer obtained by slicing the silicon block is rectangular, and the rectangular silicon wafer can be regarded as a slice of the square.
Chamfering is carried out on four sidelines of the silicon block between the pair of second side surfaces, then the silicon block is cut into a silicon wafer, and the non-100 crystal orientation monocrystalline silicon wafer with four chamfered corners can be prepared.
The method can prepare the monocrystalline silicon wafer with the diameter of 210mm multiplied by 210mm by taking the monocrystalline silicon rod with the diameter of 240mm as a raw material.
When silicon blocks are cut from the silicon single crystal rod, edge skin materials are generated; the edge skin material can be further cut into silicon wafers so as to improve the utilization rate of the single crystal silicon rod.
Drawings
FIG. 1 is a schematic of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
As shown in fig. 1, the present invention provides a method for preparing a non-100-orientation monocrystalline silicon wafer 3, comprising the steps of:
cutting a silicon block 2 from a 100-crystal-orientation single crystal silicon rod 1; the silicon block 2 is in a quadrangular prism shape, the bottom surface 21 of the silicon block 2 is vertical to the axis of the single crystal silicon rod 1, and the bottom surface 21 is rectangular; the four sides of the silicon block 2 are divided into two pairs: a pair of first side surfaces 22 parallel to each other and perpendicular to the bottom surface 21, and a pair of second side surfaces 23 parallel to each other and inclined with respect to the bottom surface 21; the included angle between the second side surface 23 and the bottom surface 21 is not more than 60 degrees; the bottom surface 21 is rectangular, the first side surface 22 is parallel to the wide side of the bottom surface 21, and the second side surface 23 is parallel to the long side of the bottom surface 21;
cutting silicon wafers 3 from the silicon block 2; the silicon block 2 is sliced in a direction parallel to the second side 23, and the sliced silicon wafer 3 is a single crystal silicon wafer.
According to the invention, a silicon block 2 is cut from a 100-crystal-orientation single crystal silicon rod 1, the bottom surface 21 of the silicon block 2 is vertical to the axis of the single crystal silicon rod 1, so that the bottom surface 21 of the silicon block 2 is also 100-crystal-orientation, and the second side surface 23 of the silicon block 2 is inclined relative to the bottom surface 21, so that the second side surface 23 of the silicon block 2 is non-100-crystal-orientation, and a silicon wafer 3 is cut from the silicon block 2, and the cutting direction is parallel to the second side surface 23, so that the single crystal silicon wafer 3 obtained by cutting the silicon block 2 is also non-100-crystal.
The included angle between the second side surface 23 and the bottom surface 21 is not more than 60 degrees, so that the non-100-crystal-orientation monocrystalline silicon wafer 3 is textured to form an inclined pyramid textured structure, and the inclined pyramid textured structure is different from the existing regular pyramid textured structure and has a certain application value.
When the length of the side edge 24 of the silicon block 2 is equal to the length of the long side of the bottom surface 21, the second side surface 23 is square, and the single-crystal silicon wafer 3 obtained by slicing the silicon block 2 is square.
If the length of the side edge 24 of the silicon block 2 is one half, one third, one fourth, one fifth or one sixth of the length of the long side of the bottom face 21, the second side face 23 is rectangular, and the single-crystal silicon wafer obtained by slicing the silicon block 2 is also rectangular, and the rectangular single-crystal silicon wafer can be regarded as a piece of the above-described square piece.
Four borderlines 25 of the silicon block 2 between the pair of second side surfaces 23 are chamfered, and then the silicon wafer 3 is cut from the silicon block 2, so that the non-100 crystal orientation monocrystalline silicon wafer with four chamfered corners can be prepared.
According to the invention, a silicon single crystal rod 1 with the diameter of 240mm is used as a raw material to prepare a 210mm single crystal silicon wafer, and only the silicon single crystal rod 1 is cut into a silicon block 2, so that the length of the long side of the bottom 21 of the silicon block 2 is 210mm, and the length of the side edge 24 of the silicon block 2 is the same as that of the long side of the bottom 21, namely the second side 23 is a 210mm square; the silicon block 2 can be sliced in a direction parallel to the second side 23, and the sliced silicon wafer 3 is a single crystal silicon wafer of 210mm × 210 mm.
In addition, when the silicon block 2 is cut from the silicon single crystal rod 1, a flaw-piece material is generated; the edge skin material can be further cut into silicon wafers to improve the utilization rate of the single crystal silicon rod 1.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. The preparation method of the monocrystalline silicon wafer with the non-100 crystal orientation is characterized by comprising the following steps of:
cutting a silicon block from the silicon single crystal rod; the silicon block is in a quadrangular prism shape, the bottom surface of the silicon block is vertical to the axis of the single crystal silicon rod, and the bottom surface is rectangular; the four sides of the silicon block are divided into two pairs: a pair of first side surfaces parallel to each other and perpendicular to the bottom surface, and a pair of second side surfaces parallel to each other and inclined with respect to the bottom surface;
cutting a silicon wafer from the silicon block; and slicing the silicon block in a direction parallel to the second side surface, wherein the sliced silicon wafer is a monocrystalline silicon wafer with a non-100 crystal orientation.
2. The method according to claim 1, wherein four edges of the silicon block between the pair of second side surfaces are chamfered, and the silicon block is cut into a silicon wafer.
3. The method according to claim 1, wherein the single crystal silicon rod has a 100-orientation.
4. The method according to claim 1, wherein the angle between the second side surface and the bottom surface is not more than 60 degrees.
5. The method according to claim 1, wherein the bottom surface is rectangular, the first side surface is parallel to the wide side of the bottom surface, and the second side surface is parallel to the long side of the bottom surface.
6. The method according to claim 5, wherein the length of the side edge of the silicon block is the same as the length of the long side of the bottom surface.
7. The method according to claim 5, wherein the length of the side edge of the silicon block is one half, one third, one fourth, one fifth or one sixth of the length of the long side of the bottom surface.
8. The method according to claim 1, wherein the outer diameter of the single crystal silicon rod is not more than 240 mm.
9. The method according to claim 8, wherein the length of the long side of the bottom surface is 210 mm.
10. The method for preparing a monocrystalline silicon wafer having an orientation other than 100 crystal orientation according to claim 1, wherein a flaw-piece is generated when the silicon ingot is cut out; and further cutting the edge skin material into silicon wafers.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010170383.2A CN111267248A (en) | 2020-03-12 | 2020-03-12 | Preparation method of non-100 crystal orientation monocrystalline silicon wafer |
| PCT/CN2021/086424 WO2021180248A1 (en) | 2020-03-12 | 2021-04-12 | Preparation method for single crystal silicon wafer having non-100 crystal orientation |
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| CN202010170383.2A CN111267248A (en) | 2020-03-12 | 2020-03-12 | Preparation method of non-100 crystal orientation monocrystalline silicon wafer |
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| CN111267248A true CN111267248A (en) | 2020-06-12 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021180248A1 (en) * | 2020-03-12 | 2021-09-16 | 常州时创能源股份有限公司 | Preparation method for single crystal silicon wafer having non-100 crystal orientation |
| CN114290550A (en) * | 2022-01-18 | 2022-04-08 | 常州时创能源股份有限公司 | Silicon wafer preparation method |
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| JP4951914B2 (en) * | 2005-09-28 | 2012-06-13 | 信越半導体株式会社 | (110) Silicon wafer manufacturing method |
| JP5995563B2 (en) * | 2012-07-11 | 2016-09-21 | 株式会社ディスコ | Optical device processing method |
| JP6677144B2 (en) * | 2016-11-15 | 2020-04-08 | 株式会社Sumco | Silicon wafer manufacturing method |
| CN110854238B (en) * | 2019-11-26 | 2022-04-26 | 常州时创能源股份有限公司 | Preparation method of monocrystalline silicon small cell |
| CN111267248A (en) * | 2020-03-12 | 2020-06-12 | 常州时创能源股份有限公司 | Preparation method of non-100 crystal orientation monocrystalline silicon wafer |
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2020
- 2020-03-12 CN CN202010170383.2A patent/CN111267248A/en active Pending
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- 2021-04-12 WO PCT/CN2021/086424 patent/WO2021180248A1/en active Application Filing
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| CN101743092A (en) * | 2007-06-25 | 2010-06-16 | 圣戈本陶瓷及塑料股份有限公司 | Methods of crystallographically reorienting single crystal bodies |
| CN103862584A (en) * | 2014-04-04 | 2014-06-18 | 常州时创能源科技有限公司 | Squaring process and application of monocrystal silicon round bar for solar cells |
| CN106929908A (en) * | 2017-03-13 | 2017-07-07 | 江西旭阳雷迪高科技股份有限公司 | The processing method of one species single crystal seed |
| CN108842179A (en) * | 2018-07-13 | 2018-11-20 | 浙江大学 | A method of setting 3 twin boundary of Σ prepares twin crystal to polycrystalline silicon ingot casting |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021180248A1 (en) * | 2020-03-12 | 2021-09-16 | 常州时创能源股份有限公司 | Preparation method for single crystal silicon wafer having non-100 crystal orientation |
| CN114290550A (en) * | 2022-01-18 | 2022-04-08 | 常州时创能源股份有限公司 | Silicon wafer preparation method |
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