CN111251483A - Silicon rod cutting method - Google Patents
Silicon rod cutting method Download PDFInfo
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- CN111251483A CN111251483A CN202010170385.1A CN202010170385A CN111251483A CN 111251483 A CN111251483 A CN 111251483A CN 202010170385 A CN202010170385 A CN 202010170385A CN 111251483 A CN111251483 A CN 111251483A
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- rod
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
Abstract
The invention discloses a silicon rod cutting method, which is used for cutting a silicon rod into silicon wafers and comprises a slicing step; the silicon rod is a single crystal silicon rod with a 100 crystal orientation; an included angle of 90 degrees is formed between the slicing direction and the axis of the silicon rod, and the silicon wafer obtained by slicing is a monocrystalline silicon wafer with a non-100 crystal orientation. The method can cut the first monocrystalline silicon piece with the non-100 crystal orientation from the monocrystalline silicon rod, mainly adjusts the slicing direction of the quasi-square rod or the square rod, has small change on the existing monocrystalline silicon rod cutting method, and is easy to popularize. The method can also cut the second monocrystalline silicon piece with the non-100 crystal orientation from the edge skin material, can improve the utilization rate of the monocrystalline silicon rod, and can improve the output of the monocrystalline silicon piece with the non-100 crystal orientation.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to a silicon rod cutting method.
Background
The monocrystalline silicon slice is formed by cutting a monocrystalline silicon rod, generally, a 100-crystal-orientation monocrystalline silicon rod is prepared firstly, the head end and the tail end of the silicon rod are cut off firstly during cutting, and then the rest sections of the silicon rod are cut to obtain a quasi-square rod or a square rod with the length direction parallel to the axis of the silicon rod; and then, the square rod or the square rod is aligned for slicing, the slicing direction is vertical to the length direction of the quasi square rod or the square rod, and the silicon wafer obtained by slicing is a 100-crystal-direction monocrystalline silicon wafer.
As can be seen from the above, the conventional method for slicing a single crystal silicon rod can only produce a single crystal silicon wafer having a crystal orientation of 100. With the development of solar cell technology, monocrystalline silicon wafers with a non-100 crystal orientation are also in demand, so that the existing cutting method of the monocrystalline silicon rod needs to be improved to prepare the monocrystalline silicon wafers with the non-100 crystal orientation.
Disclosure of Invention
The invention aims to provide a silicon rod cutting method, which can prepare a monocrystalline silicon piece with an off-100 crystal orientation.
In order to achieve the above object, the present invention provides a method for cutting a silicon rod, which cuts the silicon rod into silicon wafers, comprising a slicing step; the silicon rod is a single crystal silicon rod with a 100 crystal orientation; an included angle of 90 degrees is formed between the slicing direction and the axis of the silicon rod, and the silicon wafer obtained by slicing is a monocrystalline silicon wafer with a non-100 crystal orientation.
Preferably, the head end and the tail end of the silicon rod are cut off, and then the rest section of the silicon rod is cut to obtain a quasi-square rod or a square rod with the length direction parallel to the axis of the silicon rod; and then, the square rod or the square rod is aligned for slicing, an included angle of 90 degrees is formed between the slicing direction and the length direction of the square rod or the square rod, and the silicon wafer obtained by slicing is a first monocrystalline silicon wafer with a non-100 crystal orientation.
Preferably, the leftover segments of the silicon rods are cut to generate the edge skin materials; the edge leather material comprises: the cutting device comprises a rectangular cutting surface formed by cutting, an arc surface opposite to the cutting surface and a pair of end surfaces arranged at two ends of the cutting surface in the length direction; taking the cut surface as a datum plane; the joint part of the cutting surface and the cambered surface is taken as a sharp corner part; the part of the cambered surface, which is positioned between the sharp corners on the two sides of the edge leather material, is taken as an arc-shaped bulge;
cutting off sharp corners on two sides of the edge leather material, and cutting off arc-shaped convex parts of the edge leather material to obtain cuboid-shaped silicon blocks with the length direction consistent with the length direction of the reference surface;
and slicing the silicon block, wherein the slicing direction and the reference plane form an included angle of not 90 degrees, and the sliced silicon wafer is a second monocrystalline silicon wafer with a non-100 crystal orientation.
Preferably, when the first monocrystalline silicon wafer is sliced, an included angle of 5-85 degrees exists between the slicing direction and the length direction of the quasi-square rod or the square rod.
Preferably, when the second monocrystalline silicon wafer is sliced, an included angle of 5-85 degrees exists between the slicing direction and the reference plane.
Preferably, the first monocrystalline silicon wafer is a monocrystalline silicon wafer with 110 crystal orientation or 111 crystal orientation.
Preferably, the second monocrystalline silicon wafer is a monocrystalline silicon wafer with 110 crystal orientation or 111 crystal orientation.
The invention has the advantages and beneficial effects that: provided is a method for slicing a silicon rod, which can produce a silicon single crystal wafer having an orientation other than 100.
The method can cut the first monocrystalline silicon piece with the non-100 crystal orientation from the monocrystalline silicon rod, mainly adjusts the slicing direction of the quasi-square rod or the square rod, has small change on the existing monocrystalline silicon rod cutting method, and is easy to popularize.
The method can also cut the second monocrystalline silicon piece with the non-100 crystal orientation from the edge skin material, can improve the utilization rate of the monocrystalline silicon rod, and can improve the output of the monocrystalline silicon piece with the non-100 crystal orientation.
Drawings
FIG. 1 is a schematic view of a trim material.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention provides a silicon rod cutting method, which is used for cutting a silicon rod into silicon wafers and comprises a slicing step; the silicon rod is a single crystal silicon rod with a 100 crystal orientation; an included angle of 90 degrees is formed between the slicing direction and the axis of the silicon rod, and the silicon wafer obtained by slicing is a monocrystalline silicon wafer with a non-100 crystal orientation.
The specific embodiment of the invention is as follows:
selecting a 100-crystal-orientation single crystal silicon rod, cutting off the head end and the tail end of the silicon rod during cutting, and then cutting the rest section of the silicon rod to obtain a quasi-square rod or a square rod with the length direction parallel to the axis of the silicon rod; and then, aligning the square rod or the square rod for slicing, wherein an included angle of not 90 degrees (preferably 5-85 degrees) exists between the slicing direction and the length direction of the square rod or the square rod, and the sliced silicon wafer is a first monocrystalline silicon wafer with a non-100 crystal orientation (the first monocrystalline silicon wafer can be a monocrystalline silicon wafer with a 110 crystal orientation, a monocrystalline silicon wafer with a 111 crystal orientation or other monocrystalline silicon wafers with the non-100 crystal orientations).
As shown in fig. 1, the trimming of the remaining segment of the silicon rod generates a boundary skin material 1; the edge cover material 1 comprises: a rectangular cutting surface 11 formed by cutting, an arc surface 12 opposite to the cutting surface 11, and a pair of end surfaces respectively arranged at two ends of the cutting surface 11 in the length direction; the pair of end faces is perpendicular to the cut surface 11; taking the cut surface 11 as a reference surface; the combination part of the cutting surface 11 and the cambered surface 12 is taken as a sharp corner part 2; the part of the cambered surface 12, which is positioned between the sharp corners 2 at the two sides of the edge leather 1, is taken as an arc-shaped convex part 3;
cutting off sharp corners 2 at two sides of the edge leather 1, and cutting off arc-shaped protrusions 3 of the edge leather 1 to obtain rectangular silicon blocks 4 with the length direction consistent with that of the reference surface; the silicon block 4 is sliced, the slicing direction and the reference plane 11 have an included angle of not 90 degrees but not 0 degree (preferably 5-85 degrees), and the sliced silicon wafer is a second monocrystalline silicon wafer with a non-100 crystal orientation (the second monocrystalline silicon wafer can be a monocrystalline silicon wafer with a 110 crystal orientation, can also be a monocrystalline silicon wafer with a 111 crystal orientation, and can also be a monocrystalline silicon wafer with other non-100 crystal orientations).
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (7)
1. A method for cutting a silicon rod into silicon wafers, comprising a slicing step; the silicon rod is a single crystal silicon rod with a 100 crystal orientation; the method is characterized in that the slicing direction and the axis of the silicon rod form an included angle of not 90 degrees, and the silicon wafer obtained by slicing is a monocrystalline silicon wafer with a non-100 crystal orientation.
2. The method as set forth in claim 1, wherein both ends of the silicon rod are cut off, and the remaining silicon rod is cut to obtain a quasi-square rod or a square rod having a length direction parallel to the axis of the silicon rod; and then, the square rod or the square rod is aligned for slicing, an included angle of 90 degrees is formed between the slicing direction and the length direction of the square rod or the square rod, and the silicon wafer obtained by slicing is a first monocrystalline silicon wafer with a non-100 crystal orientation.
3. The method of claim 2, wherein the trimming of the remaining segment of the silicon rod produces a coating; the edge leather material comprises: the cutting device comprises a rectangular cutting surface formed by cutting, an arc surface opposite to the cutting surface and a pair of end surfaces arranged at two ends of the cutting surface in the length direction; taking the cut surface as a datum plane; the joint part of the cutting surface and the cambered surface is taken as a sharp corner part; the part of the cambered surface, which is positioned between the sharp corners on the two sides of the edge leather material, is taken as an arc-shaped bulge;
cutting off sharp corners on two sides of the edge leather material, and cutting off arc-shaped convex parts of the edge leather material to obtain cuboid-shaped silicon blocks with the length direction consistent with the length direction of the reference surface;
and slicing the silicon block, wherein the slicing direction and the reference plane form an included angle of not 90 degrees, and the sliced silicon wafer is a second monocrystalline silicon wafer with a non-100 crystal orientation.
4. The method of claim 2, wherein an angle of 5 to 85 degrees is formed between a slicing direction and a length direction of the quasi-square rod or the square rod when the first single crystal silicon wafer is sliced.
5. The method according to claim 3, wherein an angle between a slicing direction and a reference plane is 5 to 85 degrees when the second single crystal silicon wafer is sliced.
6. The method according to claim 2, wherein the first single-crystal silicon wafer is a 110-crystal-oriented or 111-crystal-oriented single-crystal silicon wafer.
7. The method according to claim 3, wherein the second single-crystal silicon wafer is a 110-crystal-oriented or 111-crystal-oriented single-crystal silicon wafer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010170385.1A CN111251483A (en) | 2020-03-12 | 2020-03-12 | Silicon rod cutting method |
| PCT/CN2021/086423 WO2021180247A1 (en) | 2020-03-12 | 2021-04-12 | Method for cutting silicon rod |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010170385.1A CN111251483A (en) | 2020-03-12 | 2020-03-12 | Silicon rod cutting method |
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| CN111251483A true CN111251483A (en) | 2020-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010170385.1A Pending CN111251483A (en) | 2020-03-12 | 2020-03-12 | Silicon rod cutting method |
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| CN (1) | CN111251483A (en) |
| WO (1) | WO2021180247A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021082514A1 (en) * | 2019-11-01 | 2021-05-06 | 常州时创能源股份有限公司 | Method for cutting crystalline silicon edge scrap material |
| WO2021180247A1 (en) * | 2020-03-12 | 2021-09-16 | 常州时创能源股份有限公司 | Method for cutting silicon rod |
| CN113815137A (en) * | 2021-07-30 | 2021-12-21 | 隆基绿能科技股份有限公司 | Silicon rod processing method |
| CN116277561A (en) * | 2023-05-18 | 2023-06-23 | 苏州晨晖智能设备有限公司 | Method for squaring silicon rod |
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| US8623137B1 (en) * | 2008-05-07 | 2014-01-07 | Silicon Genesis Corporation | Method and device for slicing a shaped silicon ingot using layer transfer |
| CN111251483A (en) * | 2020-03-12 | 2020-06-09 | 常州时创能源股份有限公司 | Silicon rod cutting method |
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2020
- 2020-03-12 CN CN202010170385.1A patent/CN111251483A/en active Pending
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2021
- 2021-04-12 WO PCT/CN2021/086423 patent/WO2021180247A1/en active Application Filing
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| CN201824485U (en) * | 2010-09-29 | 2011-05-11 | 常州天合光能有限公司 | Slicing device for battery plates made from multi-crystal silicon ingots |
| CN202862430U (en) * | 2012-07-30 | 2013-04-10 | 上海申和热磁电子有限公司 | Silicon wafer crystal orientation chamfering jig |
| CN103552166A (en) * | 2013-09-30 | 2014-02-05 | 洛阳鸿泰半导体有限公司 | Device for adjusting crystal-orientation deviation degree of silicon rod |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021082514A1 (en) * | 2019-11-01 | 2021-05-06 | 常州时创能源股份有限公司 | Method for cutting crystalline silicon edge scrap material |
| WO2021180247A1 (en) * | 2020-03-12 | 2021-09-16 | 常州时创能源股份有限公司 | Method for cutting silicon rod |
| CN113815137A (en) * | 2021-07-30 | 2021-12-21 | 隆基绿能科技股份有限公司 | Silicon rod processing method |
| CN116277561A (en) * | 2023-05-18 | 2023-06-23 | 苏州晨晖智能设备有限公司 | Method for squaring silicon rod |
| CN116277561B (en) * | 2023-05-18 | 2023-07-21 | 苏州晨晖智能设备有限公司 | Method for squaring silicon rod |
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| Publication number | Publication date |
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| WO2021180247A1 (en) | 2021-09-16 |
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Application publication date: 20200609 |