CN202423307U - Improved casting crystal silicon wafer - Google Patents
Improved casting crystal silicon wafer Download PDFInfo
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- CN202423307U CN202423307U CN201120364766XU CN201120364766U CN202423307U CN 202423307 U CN202423307 U CN 202423307U CN 201120364766X U CN201120364766X U CN 201120364766XU CN 201120364766 U CN201120364766 U CN 201120364766U CN 202423307 U CN202423307 U CN 202423307U
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Abstract
The utility model relates to a crystal silicon wafer which employs crystalline silica/casting crystalline silica/silicon alloys as a main body. The conventional crystal silicon wafer and crystalline silica cell sheet are shaped as a quadrangle having four chamfers. Due to the chamfers, the conventional crystal silicon wafer and crystalline silica cell sheet are easy to break and be damaged. The damaged chamfering has low restoration capability, with low yield. The cell sheets, made of the conventional fillet monocrystalline silicon wafers having large radius of curvature, form and are packaged into a crystalline silica solar energy generating apparatus, with the packaging material having low efficient utilization rate. The utility model adopts convex fillet-shaped silicon chip and cell sheet structure as well as the silicon chip and cell sheet having arc chord angle of small radius of curvature. The improved casting crystal silicon wafer improves silicon chip-manufacturing yield, raises restoration capability of minimal damage, increases the effective area utilization rate of a solar energy generating apparatus, and cuts the cost.
Description
Technical field
The utility model relates generally to the solar battery sheet and the crystal silicon chip that are the main body with crystalline silicon or casting crystalline silicon or silicon alloy.Casting crystal silicon chip or the crystal silicon chip that some are not cast are commonly used to make crystal silicon solar cell sheet, and crystal silicon solar cell sheet is used for making device of solar generating, for example solar cell, or title photovoltaic cell.The utility model provides improved casting and not cast crystal silicon chip, casting crystal silicon solar cell sheet and crystal silicon solar TRT.
Background technology
Crystalline silicon (or silicon alloy) material can be divided into the molten crystal in casting crystal, pulling of crystals (rod) and district according to the difference of its manufacturing approach.Wherein, the casting crystalline silicon is widely used in the silicon chip and the manufacturing of battery sheet in photovoltaic field because of lower production cost, higher production efficiency.The cast silicon crystal is distinguished from method, can be divided into crucible cast silicon crystal and no crucible casting (for example electromagnetic suspension casting) silicon crystal; Distinguish from crystal structure, can be divided into casting polycrystalline silicon and casting monocrystalline silicon.
Photovoltaic power generation apparatus is because generated output is that area is dependent; Usually need a plurality of battery sheets in unit are, to compose and lay out into maximum effective area, thereby, be adapted to silicon ingot cutting and battery sheet solid matter; Photovoltaic adopts tetragonal contour shape usually with battery sheet and silicon chip, has four angular positions.
Be different from progress in Czochralski silicon crystal or zone melting and refining silicon crystal; Because of its barred body or ingot body size less; But direct slicing obtain the rounded square silicon chip or with the identical silicon chip of zone melting and refining silicon crystal section shape, the cast silicon crystal has bigger size usually, for being made into silicon chip or battery sheet; Usually before section, need the cast silicon crystal ingot of monoblock be split into the silico briquette of a plurality of less four prism types; Be commonly called as silicon side's ingot, then silicon side's ingot obtained silicon chip along the direction section perpendicular to prism, for example the open CN201010238223.3 of one Chinese patent application is said.
Silicon side's ingot of the four prisms cylinder that is obtained by the cutting of the casting crystal silicon ingot of monoblock is before section; Usually need carry out chamfer machining; When being cut into silicon chip, form sharp-pointed square silicon chip bight with the rectangular edge that prevents silicon side's ingot; The latter is very easily taken place damaged in silicon chip working process or subsequent treatment, and for example one Chinese patent application discloses 200920159037.3 said.After the casting crystalline silicon side ingot section through chamfer machining, acquisition has the casting crystal silicon chip in the bight of chamfering outer rim.
The casting crystal silicon chip that above-mentioned conventional method is made; Outward appearance is square or is non-square; Have four long edge wheel profiles (side line) and near four bights of outline line end, the edge in bight forms the hypotenuse line that is 45 degree angles with silicon chip side line because of chamfer machining.Typical 8 inches casting crystal silicon chips, its size dimension is 156*156mm (containing chamfer site), chamfered section bit wide 0.5～3mm.
Although chamfering has avoided the right angle silicon chip to be easy to broken shortcoming; Make the rate of finished products of silicon chip processing increase; But, the position, boundary that the hypotenuse of chamfering and side form, and straight hypotenuse itself; Still constituted the fragile position of silicon chip, cause silicon chip in machine-shaping, be processed in the battery sheet process and the battery sheet that obtains its angular position in subsequent treatment is prone to impaired breaking; Simultaneously, the hypotenuse line position of chamfering is the little unfilled corner of easy impaired formation in slicing processes, and other microlesions, is difficult to repair, and has reduced the section rate of finished products.
Summary of the invention
Therefore, one of the object of the invention provides novel improved casting crystal silicon chip and improved casting crystal silicon solar cell sheet, and the novel solar power generation device that has comprised this improved casting crystal silicon solar cell sheet.Simultaneously, the invention allows for the method for making above-mentioned improved casting crystal silicon chip.Novel casting crystal silicon chip of the present invention comprises monocrystalline silicon piece and polysilicon chip; Novel casting crystal silicon solar cell sheet of the present invention comprises monocrystaline silicon solar cell sheet and polysilicon solar battery slice.
The scheme of novel casting crystal silicon chip of the present invention is achieved in that provides the casting of a kind of monocrystalline or polycrystalline crystal silicon chip; It comprises four bights; The outer rim at least one bight in four bights of described silicon chip is a spirogyrate; The outer rim in the bight of described spirogyrate comprises that outline line is the for example outer rim of circular arc or elliptic arc of arc, the linear outer rim of conic such as parabola shaped or monolateral hyperbola; With outline line be the for example outer rim of tri linear shape or four broken line shapes of many broken lines shape, and the outer rim that constitutes of crest curve and broken line.
The scheme of novel casting crystal silicon solar cell sheet of the present invention is achieved in that provides the casting of a kind of monocrystalline or polycrystalline crystal silicon solar cell sheet; It comprises four bights; The outer rim at least one bight in four bights of described battery sheet is a spirogyrate; The outer rim in the bight of described spirogyrate comprises that outline line is the for example outer rim of circular arc or ellipse arc of arc, the linear outer rim of conic such as parabola shaped or monolateral hyperbola; With outline line be the for example outer rim of tri linear shape or four broken line shapes of many broken lines shape, and the outer rim that constitutes of crest curve and broken line.
Novel solar power generation device of the present invention comprises at least one panel of casting crystal silicon solar cell sheet, the base plate that encapsulates this casting crystal silicon solar cell sheet and printing opacity, collects the lead-out terminal of the electric current of battery sheet generation; Wherein, The angular position that it is spirogyrate that described casting crystal silicon solar cell sheet comprises its outer margin contour at least; The outer rim in the bight of described spirogyrate; Comprise that outline line is the for example outer rim of circular arc or ellipse arc of arc; Outer rim that conics such as parabola shaped or monolateral hyperbola are linear and outline line are the for example outer rim of tri linear shape or four broken line shapes of many broken lines shape, and the outer rim that constitutes of crest curve and broken line.
The circular arc radius of curvature of the circular arc salient angle of the circular arc radius of curvature in the arc-shaped convex bight (salient angle) of above-mentioned novel silicon chip of the present invention, battery sheet and the battery sheet of novel solar power generation device; Preferably much smaller than from the salient angle edge to silicon chip or the distance at battery sheet center, further be preferably less than from the salient angle edge to silicon chip or the distance at battery sheet center 1/6.
A further object of the present invention; Provide novel crystal silicon chip, crystal silicon cell sheet with arc-shaped convex bight; Wherein, The circular arc radius of curvature in described arc-shaped convex bight is much smaller than from protruding corner edge to silicon chip or the distance at battery sheet center, and further be preferably less than from the salient angle edge to silicon chip or the distance at battery sheet center 1/6.This have monocrystalline of small curvature radius arc chord angle or silicon chip, the battery sheet of polycrystalline of the present invention; Comprise the circular arc radius of curvature and equal traditional monocrystalline silicon piece, the battery sheet of arc edge to the circular arc bight of the distance at battery sheet center; Has the more bight of protrusion; The higher area of composing and laying out enriches rate, and is also more attractive in appearance.
The present invention also provides a kind of novel solar power generation device; Comprise at least one crystal silicon solar cell sheet, encapsulate this crystal silicon solar cell sheet base plate and transparent panel, collect the lead-out terminal of the electric current that the battery sheet produces; It is characterized in that; The angular position that it is circular arc that described crystal silicon solar cell sheet comprises its outer margin contour at least, described circular arc radius of curvature less than the angular position outer rim of battery sheet to 1/6 of the distance at battery sheet center.Wherein, described crystal silicon solar cell sheet comprises casting crystal silicon solar cell sheet, the molten crystal silicon solar cell sheet in district, also comprises monocrystalline silicon battery sheet and polycrystal silicon cell sheet.Such device of solar generating; Comprise its bight circular arc radius of curvature and equal the traditional device of solar generating of arc edge to the battery sheet of the distance at battery sheet center; For example; Tradition pulling of silicon single crystal device of solar generating has the advantage that the encapsulating material use rate is low, cost is low of unit generated output, and more attractive in appearance.[0015] the present invention also provides a kind of above-mentioned monocrystalline or the crystal silicon chip of polycrystalline or method of casting crystal silicon chip with spirogyrate bight of making; Comprise step; Cutting silicon rod or silicon ingot obtain crystalline silicon side's ingot of four prism type or cast crystalline silicon side's ingot, and silicon side's ingot of four prism type is done rounding processing along the rib of major axis; And then, form the silicon chip in bight with radiused edges outline line along this silicon side's ingot being cut into silicon chip perpendicular to the direction of major axis.
The present invention also provides another to make the method for the casting crystal silicon chip of above-mentioned monocrystalline with spirogyrate bight or polycrystalline; Comprise step; To cast crystalline silicon side's ingot and do the electrochemical corrosion processing; The stronger corrosiveness at relative other positions that the point discharge effect that is utilized in silicon side's ingot in the etchant solution has the tip shape of lobed outer rim is corroded at the crest line position of silicon side's ingot, and then the edge direction vertical with the crest line position cuts into silicon chip with silicon side's ingot.
Electrochemical corrosion of the present invention is handled, and according to the difference of monocrystalline silicon side's ingot or polysilicon side's ingot, can take different chemical corrosion liquids respectively; Wherein, for monocrystalline silicon side's ingot, can adopt acid etching solution; But preferably adopt alkaline corrosion liquid; And, can adopt alkaline corrosion liquid, but preferably adopt acid etching solution for polysilicon side's ingot.According to typical electrochemical corrosion processing method of the present invention; Silicon side's ingot is placed corrosive liquid as anode, and other gets graphite block and places corrosive liquid as negative electrode, between anode and negative electrode, passes to direct current by external dc power supply; The size of adjustment current strength also keeps reasonable time; Just can obtain silicon side's ingot that the seamed edge position is corroded comparatively protruding curve form, at this moment, the right angle intersection of former seamed edge position adjacent silicon face become with the curved surface of mild turnover or arc surface alternate divide a word with a hyphen at the end of a line crossing.
Above-mentioned the have monocrystalline in spirogyrate bight or the crystal silicon chip or the battery sheet of polycrystalline of the present invention have not breakable characteristic.Choose different rounding radius of curvature and many broken lines number; Adopt FEM model to do stress analysis; The silicon chip or the battery sheet that relatively have the chamfering wheel profile, the result shows that the bight outer rim is the silicon chip or the battery sheet of circular arc profile; Or the quadrangular silicon side ingot of rib portion rounding, the compressive property in its outline line or the nearly bight of contoured surface can double; And the bight has the silicon chip or the battery sheet of many broken lines shape outline line, and its compressive property can improve about 50%.Simultaneously, rounding is handled the direction that can change local stress, becomes favourable compressive stress state by tension stress.
Therefore, silicon chip of the present invention or battery sheet will also have higher anti-stress than the silicon chip of existing chamfering or battery sheet cracky more not in the machine-shaping process.Simultaneously, the bight of spirogyrate has kept the space that the grinding repair process is done in the bigger small breakage in supplied silicon chip bight, has reduced the grinding of the small breakage in bight and has repaired difficulty, has improved the reparation success rate.Thus; Ingot is made novel silicon chip of the present invention and battery sheet from silicon side; And process novel solar power generation device of the present invention from battery sheet of the present invention, with obtaining higher rate of finished products and output capacity, thereby reduced the manufacturing cost of silicon chip and battery sheet; Improve output level, reduced the cost of device of solar generating.
Make the process of silicon chip from silicon side's ingot, usually at least one side of silicon side's ingot of four prisms cylinder is bonded on the frock clamp with fixing silicon side's ingot temporarily.At this moment, at least one the seamed edge position of silicon side's ingot and the prismatic side at place thereof be as the lead-in wire terminal and the lambda line end face of line of cut, in whole cutting process, all receives bigger cutting and impact, particularly near cutting at the end silicon chip cracky more herein.
Novel silicon chip of the present invention; When including its outer rim and being bight of spirogyrate; The position that is equivalent to rib of former silicon side ingot that can this bight is corresponding during as cutting near the line inlet port end of cutting end of a period place; Silicon chip improves the section rate of finished products at the damaged probability at this position in the time of can reducing cutting thus.The silicon chip that will include a spirogyrate bight is processed the battery sheet; And then the battery sheet processed device of solar generating, also because higher battery sheet rate of finished products of higher silicon chip rate of finished products and corresponding acquisition and lower battery sheet and device of solar generating manufacturing cost.
Of the present inventionly include the silicon chip that its outer rim is 2 adjacent corners of spirogyrate; When cutting by silicon side's ingot; Permission will be corresponding to the cutting mode of a silicon face between the corresponding silicon side's ingot in these adjacent two bights of silicon chip adjacent digonous as mucilage glue surface; So just can reduce the silicon chip bight damage probability that approaching line of cut lead-in wire terminal at the end of cutting and leading-out terminal cause simultaneously, improve the rate of finished products of silicon chip.Similarly; Of the present invention comprise its outer rim be spirogyrate 2 adjacent corners silicon cell with comprise the device of solar generating of this battery sheet; Owing to allow the cutting mode of the low damage probability of silicon chip, can improve the rate of finished products of crystal silicon battery sheet and crystal silicon solar TRT, reduce cost.
Of the present inventionly include the silicon chip that its outer rim is 3 adjacent corners of spirogyrate; When ingot cuts in silicon side; Permission will be corresponding to the cutting mode of a face between silicon side's ingot in these adjacent two spirogyrate bights of silicon chip adjacent digonous as mucilage glue surface, simultaneously, will be corresponding to another face at the place, position of the rib of silicon side's ingot in the 3rd spirogyrate bight of silicon chip lambda line end face during as cutting; Can reduce the cutting damage probability of mucilage glue surface and lambda line end face simultaneously; Improve the grinding repair ability of silicon chip, improve the qualification rate and the output capacity of silicon chip, reduce the cost of silicon chip in the small breakage in these 3 bights.
Similarly, of the present inventionly include the battery sheet that its outer rim is 3 adjacent corners of spirogyrate, and the device of solar generating that includes this battery sheet, the high rate of finished products of its manufacture process and lower cost can be obtained.Simultaneously, 4 bights only have 3 bights to have the characteristic of spirogyrate outer rim, also have the difference of utilizing the bight and come the direction of mark silicon chip, battery sheet and the effect of positive and negative, make silicon chip and battery sheet in the course of processing, have more operation ease and controllability.
The invention allows for four bight outer margin contours is silicon chip, the battery sheet of spirogyrate and includes the device of solar generating of battery sheet that outer margin contour is four bights of spirogyrate; They have also kept the aesthetic property of outward appearance symmetry in the advantage that can obtain higher fabrication yield and lower manufacturing cost.
According to the present invention, the spirogyrate corner edge of described casting crystal silicon chip or battery sheet can be made up of curved profile.Described curved profile can be the circular arc profile, also can be the ellipse arc profile, perhaps parabolic outline, continuous profile, and its edge line is respectively circular arc line and oval camber line, perhaps parabola, monolateral conic sections such as hyperbola.The radius of curvature of described circular arc or the major semiaxis of elliptic arc or semi-minor axis; The perhaps focal radius of conic section; Can greater than, be equal to or less than the distance of the center of silicon chip or battery sheet to the bight, choose a value usually, for example much smaller than this distance; Below 1/6 of this distance value forms comparatively raised profile.
According to the present invention, the spirogyrate corner edge of described silicon chip or battery sheet also can be many broken lines shape, and its edge line is made up of many broken lines.Described many broken lines can be tri linear, four broken lines or five broken lines, or the like, usually,, can adopt the edge of tri linear because the bight size is less and convenient processing, can satisfy the requirement that reduces damage probability, be convenient to processing again.
According to the present invention; The crystal silicon chip that the casting crystal silicon chip of described monocrystalline is normally cut into by the casting single crystal silicon ingot; For example, the silicon chip that the silicon side's ingot cutting with single crystal orientation basically that is cut out by accurate monocrystalline of so-called casting or foundry single crystal rod obtains.The battery sheet of being processed by the casting crystal silicon chip of this monocrystalline is exactly the casting crystal silicon solar cell sheet of monocrystalline of the present invention.
Similarly; According to the present invention; The crystal silicon chip that polysilicon side's ingot cutting that the casting crystal silicon chip of described polycrystalline is normally cut out by the casting polycrystalline silicon ingot obtains; Also comprise the silicon chip of the silicon side's ingot cutting acquisition that has an above crystal boundary on its cross section that is cut out by accurate single crystal rod of so-called casting or foundry single crystal rod, the surface of this silicon chip has more than one crystal boundary.The battery sheet of being processed by the casting crystal silicon chip of this polycrystalline is exactly the casting crystal silicon solar cell sheet of polycrystalline of the present invention.
For obtaining the silicon chip with spirogyrate bight of tri linear shape profile of the present invention, can carry out three plain grindings to the seamed edge position of silicon side's ingot of four prisms cylinder and handle, then this silicon side's ingot is cut into silicon chip; Wherein, each plain grinding is got different plain grinding angles respectively, for example; A proximal surface with silicon side's ingot seamed edge is an angle reference; The angle of three plain grindings is got 30 degree successively, 45 degree, 60 degree.Similarly, a rectangular edge of silicon side's ingot is made successively the plain grinding of four different angles and handled, cut into silicon chip then, can obtain to have the silicon chip in the spirogyrate bight of four broken line shape profiles.
Further specify the present invention below in conjunction with accompanying drawing and embodiment.
Description of drawings
Fig. 1 illustrates the bight with spirogyrate outer rim of novel silicon chip of the present invention, among the figure dotted line illustrate chamfering of the prior art silicon chip its constitute the hypotenuse line of bight outer rim.
Fig. 2 illustrates the bight of the spirogyrate outer rim with circular arc of novel silicon chip of the present invention.The radius of curvature of the dotted line R signal circular arc among the figure.
Fig. 3 illustrates the bight of novel silicon chip of the spirogyrate outer rim with tri linear shape profile of the present invention.
Fig. 4 illustrates that the outer rim in its adjacent 2 bights of the present invention is the novel silicon chip of circular arc, and as a comparison, 2 bights of all the other of silicon chip are common chamfering type bight.
Fig. 5 illustrates the novel silicon chip in the bight that to have 3 its outer rims be circular arc of the present invention, and its 4th bight is common chamfering type bight.
Fig. 6 illustrates the novel silicon chip in the bight that to have 4 its outer rims be circular arc of the present invention.
Description of reference numerals
1: the main part of silicon chip
21,22,23,24: the 1st, 2,3,4 bight of silicon chip;
31,32,33,34: the outer margin contour line in the 1st, 2,3,4 bight of silicon chip;
41,42,43,44: one of four long edge wheel profiles of silicon chip;
R: circular arc radius of curvature;
Accompanying drawing of the present invention is sketch map, and the relative size that each position showed among the figure according to clearly showing and making things convenient for the needs of drawing to adjust, is not represented actual ratio or size.The thickness that does not show silicon chip in the accompanying drawing.The thickness of silicon chip of the present invention, battery sheet can need and be chosen suitable thickness arbitrarily according to use, usually, is to save material, and the one-tenth-value thickness 1/10 of silicon chip of the present invention, battery sheet is at 70～400um.According to the present invention, choose thin thickness, embody product of the present invention more easily and improve rate of finished products and the advantage that reduces cost.
Embodiment
Fig. 1 illustrates the bight with spirogyrate outer rim of the silicon chip described in a kind of execution mode of casting crystal silicon chip of the present invention.The outer rim hypotenuse line in the chamfering bight of the silicon chip of the dotted line signal prior art among the figure.Fig. 1 clearly demonstrates silicon chip of the present invention; The outer margin contour in its bight; Silicon chip bight (the present invention is referred to as the straight angle) than prior art is tangible convex shape (the present invention is referred to as salient angle), but is not that square is protruding; This makes two adjacent edge wheel profiles of silicon chip cross a bit of spirogyrate curve at the Communicating in bight on the one hand and gently transfers and divide a word with a hyphen at the end of a line; On the other hand, increased the entity area in bight, made the bight keep more space and can be used for the small breakage of bight outer rim or damaged grinding reparation.The present invention finds, the acting in conjunction of these two kinds of factors can make rate of finished products raising, the disqualification rate of silicon chip reduce, thereby improves the output of silicon chip, reduces the cost of silicon chip.
In this execution mode; The silicon chip bight outer margin contour line of described convex shape can be the convex outer curve of continuous arbitrary shape; The spirogyrate curve that comprises rule; For example ellipse, parabola, monolateral conic sections such as hyperbola, or irregular spirogyrate curve, or the combination in any line of curve and broken line.
With above-mentioned silicon chip with bight of spirogyrate outer rim, process the battery sheet according to the manufacturing approach of crystal silicon battery sheet, promptly obtain casting crystal silicon solar cell sheet of the present invention, it includes at least one bight with spirogyrate outer rim.This is had the battery sheet in spirogyrate outer rim bight,, promptly obtain casting crystal silicon solar TRT of the present invention through encapsulating and be provided with the lead-out terminal of projected current.
Fig. 2 illustrates the bight of the spirogyrate outer rim with circular arc of the silicon chip described in a kind of execution mode of casting crystal silicon chip of the present invention.The radius of curvature of this circular arc of dotted line signal among the figure.Silicon chip with bight of circular arc outer margin contour of the present invention has the silicon chip in other spirogyrate outer margin contour bights, has the damaged ability of optimum relatively opposing, and is easy to make.In this execution mode, the radius of curvature of described circular arc can be adjusted according to the size of bight size.Usually choose radius value far below distance value, be preferably lower than 1/6 of this value, and be higher than silicon chip is goed deep in the bight along the silicon chip edge line depth value half the from the bight outer rim of silicon chip to the silicon chip center.For 8 inches silicon chips, between its radius dominant area at 0.5～16mm, further preferred 1～8mm.
According to the proposed method, above-mentioned silicon chip with corner edge profile of circular arc can cut into silicon chip along the direction perpendicular to seamed edge with silico briquette and obtain through the seamed edge position of the silico briquette (or silicon side's ingot) of four prisms cylinder being done rounding processing then.
With above-mentioned silicon chip with bight of circular arc outer rim, process the battery sheet according to the manufacturing approach of crystal silicon battery sheet, promptly obtain casting crystal silicon solar cell sheet of the present invention, it includes at least one bight with circular arc outer rim.With this battery sheet with circular arc outer rim bight, the lead-out terminal of projected current is set, and is packaged between base plate and the light penetrating panel, promptly obtain casting crystal silicon solar TRT of the present invention.
Fig. 3 illustrates the bight of novel casting crystal silicon chip of another execution mode of the present invention, and this bight has the spirogyrate outer rim of tri linear shape profile.Described tri linear shape profile, by three connected to one another, angles from the side line direction ladder of a side in this bight of silicon chip turn to the minor face line of the side line direction of opposite side to form.The plain grinding of three different angles (for example, 30 degree, 45 degree, 60 degree) is made at position to the rib of silicon side's ingot of four prisms cylinder successively, and then with this silicon side's ingot dicing, can obtain the silicon chip of this execution mode.
Get above-mentioned silicon chip, become the battery sheet with processes, promptly obtain the casting crystal silicon solar cell sheet with bight of tri linear shape outer margin contour of the present invention by conventional method with bight of tri linear shape outer margin contour.This battery sheet is processed solar module, promptly obtain a kind of casting crystal silicon solar TRT of the present invention.
Fig. 4 illustrates that the outer rim in its adjacent 2 bights of the present invention is the casting crystal silicon chip of circular arc, and 2 bights of all the other of silicon chip are common chamfering type bight, has the outer rim of the hypotenuse line at 45 degree or 50 degree inclination angles.Among the embodiment of this execution mode, the circular arc radius of curvature is 3mm, and the circular arc outer rim is 2mm along the degree of depth that the side line gos deep into silicon chip.An example of its manufacturing approach is that getting the cross section length of side is the flat column silicon side ingot of 156mm, high 230mm, with adjacent 2 roundings of four inclines; Chamfering radius is 3mm, and 2 incline chamferings place multi-line cutting machine with the silicon side's ingot that obtains in addition; Wherein, the silicon face between the incline of 2 roundings is bonded on the work plate and fixes as adhesive surface; The edge direction vertical with incline cuts into silicon chip, obtains the novel silicon chip of this execution mode.This silicon chip is processed the battery sheet, and at least one this battery sheet is packaged into photovoltaic cell component, promptly obtain a kind of device of solar generating of the present invention.
When ingot cutting manufacturing above-mentioned 2 bight outer rims of the present invention are the silicon chip of arc-shaped convex from silicon side; If the circular arc position is positioned at the opposite face (promptly going into edge of a knife face) of the viscose glue stationary plane of silicon side's ingot; The cutting test of 30 silicon side's ingots, little unfilled corner, unfilled corner silicon chip occurrence rate add up to 1.81%; If the circular arc position is positioned at the viscose glue stationary plane (promptly going out edge of a knife face) of silicon side's ingot; The cutting test of 30 silicon side's ingots, little unfilled corner, unfilled corner silicon chip occurrence rate add up to 0.77%, obviously reduce; Wherein, most little unfilled corners damaged reparation behind the bight of grinding convexity.
Fig. 5 illustrates the execution mode of novel silicon chip in the bight that to have 3 its outer rims be circular arc of the present invention, and its 4th bight is common chamfering type bight, has the outer rim of the hypotenuse line at 45 degree inclination angles.Among the embodiment of this execution mode, the circular arc radius of curvature is 2mm, and the circular arc outer rim is 1.5mm along the degree of depth that the side line gos deep into silicon chip.An example of its manufacturing approach is that getting the cross section length of side is the flat column silicon side ingot of 156mm, high 210mm, with adjacent 3 roundings of four inclines; Chamfering radius is 2mm, and 1 incline chamfering places multi-line cutting machine with the silicon side's ingot that obtains in addition; Wherein, Silicon face between the incline of 2 roundings is bonded on the work plate and fixes as adhesive surface, with the 3rd the incline position through rounding as the line of cut end of incoming cables; The edge direction vertical with incline cuts into silicon chip, obtains the novel silicon chip of this execution mode.This silicon chip is processed the battery sheet, and at least one this battery sheet is packaged into photovoltaic cell component, promptly obtain a kind of device of solar generating of the present invention, the outer rim in 3 bights of its battery sheet is circular arc.
Fig. 6 illustrates the execution mode of novel silicon chip in the bight that to have 4 its outer rims be circular arc of the present invention.Wherein, the circular arc radius of curvature of circular arc outer rim is 6mm, circular arc incision silicon chip side line 3mm.This silicon chip is handled through conventional batteries sheet manufacture crafts such as surface wool manufacturing, diffusion system pn knot, corrosion dephosphorization silex glass, edge etching, coated with antireflection film, electrode printing, sintering, processed a kind of novel crystal silicon solar cell that its outer rim is 4 bights of circular arc that has of the present invention.At least one this battery sheet is packaged into photovoltaic cell component, promptly obtains a kind of device of solar generating of the present invention, the outer rim in 4 bights of its battery sheet is circular arc.
The outer rim of making 4 bights of the above-mentioned embodiment of the present invention is the silicon chip or the battery sheet of circular arc; Can adopt cast silicon crystal ingot; For example casting single crystal or casting polycrystalline silicon ingot; Also can adopt the molten crystal ingot in district, for example the horizontal zone melting single crystal rod of cuboid can also adopt the pulling of crystals rod.In a kind of execution mode in back, the pulling of crystals rod is cut into the four prism type crystal ingot along major diameter earlier, again rounding processing is done by four rib portions of crystal ingot, and to 1/6 of silicon chip centre distance, section then obtains silicon chip to the circular arc radius of curvature of its rounding less than circular arc.Obtain monocrystalline silicon piece like this, the bight of its circular arc has less circular arc radius of curvature, can device of solar generating of the present invention composed and laid out, be packaged into to the battery sheet that a plurality of silicon chips are thus processed.This device of solar generating has the drift angle gap between less battery sheet, and is not only attractive in appearance, and area utilization improves the encapsulating material cost reduction of unit generated output, cost of electricity-generating reduction.By contrast; The silicon chip that the pulling of crystals rod is processed by existing technology, its arc chord angle has than orthodrome radius of curvature (its radius is the radius of turn of vertical pulling crystal bar), is packaged into battery component after processing the battery sheet; Has bigger void area between the bight of each battery sheet; Not only not attractive in appearance, and wasted the area that takes up room of assembly, reduced the utilance of encapsulating material.
A mutation as above-mentioned embodiment; Perhaps reduction procedure; The present invention proposes crystal silicon chip or crystal silicon cell sheet that the outer rim of having only 1～3 bight is circular arc, the circular arc radius of curvature in its bight is got 1/6～1/20 of this distance usually much smaller than arc edge to silicon chip centre distance.Can a plurality of this kind battery sheets be composed and laid out, encapsulate and process a kind of device of solar generating of the present invention.
Make among the embodiment of electrochemical etching method of the crystal silicon chip with spirogyrate bight of the present invention; The crystal silicon ingot of monocrystalline or polycrystalline or silicon rod are cut into silicon side's ingot of four prism type earlier, place the acid etching solution of being made up of strong oxidizer, hydrofluoric acid and buffer solution then, and at least one seamed edge of silicon side's ingot is submerged into corrosive liquid; Silicon side's ingot is linked to each other with the positive pole of DC power supply; Power cathode is connected on the graphite electrode that places corrosive liquid, feeds electric current 1～10A, handle 10～100min; Take out silicon side's ingot; Clean, insert in the multi-line cutting machine and cut into slices, promptly obtain to have the crystal silicon chip at least one spirogyrate bight along direction perpendicular to seamed edge.
The electrochemical etching method that the present invention uses has corrosive effect heterogeneous, and silicon ingot will be higher than the side at the etching extent at seamed edge position, and the effect that therefore can obtain to remove sharp-pointed seamed edge is at the curved surface of the former seamed edge position of silicon ingot formation spirogyrate.
Make among another embodiment of electrochemical etching method of the crystal silicon chip with spirogyrate bight of the present invention, the crystal silicon ingot of monocrystalline or polycrystalline or silicon rod are cut into silicon side's ingot of four prism type earlier, place alkali corrosion liquid then; At least one seamed edge of silicon side's ingot is submerged into corrosive liquid, silicon side's ingot is linked to each other with the positive pole of DC power supply, power cathode is connected on the graphite electrode that places corrosive liquid; Feed electric current 0.5～5A; Handle 8～80min, take out silicon side's ingot, clean; Insert the multi-line cutting machine section, promptly obtain to have the crystal silicon chip at least one spirogyrate bight.
When making the silicon chip in spirogyrate of the present invention bight; Silicon ingot is approaching at the end in section; Silicon ingot improves the tolerance of impacts of mortar, has reduced crackle, unfilled corner, little unfilled corner probability, the damage that reduction cutting stress, temperature stress cause; Improve the cutting mortar flow and the linear speed permissible value that closely go out the edge of a knife, reduced stria, hard spot fault.Simultaneously, the bight of evagination allows bigger damaged grinding space, bight, and increases the effective area of silicon chip, therefore, can obtain higher output capacity and lower manufacturing cost.
The battery sheet in spirogyrate of the present invention bight because stronger anti-stress has reduced the process loss in the battery machining process, has improved the output capacity of battery sheet; Simultaneously, the bight of spirogyrate has also increased the effective area that absorption luminous energy generates electricity.
Compare the present invention, traditional casting crystal silicon chip, battery sheet, its bight all is single chamfering structure, is to make the single chamfer machining and then cut into silicon chip at the prismatic position of four prism type silicon ingot.Because the grinding during the single chamfering needs a grinding to put in place, and presses the miter angle grinding, the removal amount of grinding is bigger; Grinding is removed silico briquette is formed bigger impact, very easily causes stress damage and mechanical damage in the chamfer site part, forms micro-crack; The latter is for the silicon crystal of fragility, and the influence that it receives factors such as temperature, vibrations, pressure very easily is extended to the breakage of little unfilled corner even unfilled corner; Thereby influenced rate of finished products, improved manufacturing cost.
Therefore, crystal silicon chip of the present invention, battery sheet, more traditional silicon chip, battery sheet have rate of finished products height, advantage that cost is low, and its device of solar generating of processing has the integrated cost advantage of can not ignore.
Crystal silicon chip of the present invention and battery sheet; Comprise the crystal silicon chip and the battery sheet that contain various dopants; For example contain silicon chip and battery sheet, contain performance improver for example crystal silicon chip, the battery sheet of germanium based on the needed P type dopant boron in battery piece performance basis, gallium or N type doping agent phosphorus, antimony.Wherein, dopant content generally is no more than 49%, for example, and the crystal silicon chip of germanic about 5～10000ppm and the battery sheet processed of silicon chip thus.
Those skilled in the art is obvious, under the situation that does not depart from scope of the present invention or design, can make various modifications and distortion to the structure and the method that are disclosed.
Specification of the present invention and embodiment are exemplary, consider specification and put into practice the invention spirit that discloses among this paper, and those skilled in the art can other embodiments obviously of the present invention.
Claims (3)
1. improved casting crystal silicon chip comprises four bights, it is characterized in that the outer rim at least one bight of described silicon chip is spirogyrate.
2. improved casting crystal silicon chip according to claim 1 is characterized in that the outer rim in 2 adjacent bights of described silicon chip is spirogyrate.
3. improved casting crystal silicon chip according to claim 1 and 2; It is characterized in that optional one or more the male rotor profile that is combined to form in circular arc, ellipse arc, parabola shaped, monolateral hyperbola, many broken lines shape of cause constitutes outside the described spirogyrate bight.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015043099A1 (en) * | 2013-09-26 | 2015-04-02 | 中国科学院半导体研究所 | Method for forming crystal bar with identification or chamfer and polygonal cross section, and substrate forming method, crystal bar and substrate |
| WO2021098228A1 (en) * | 2019-11-19 | 2021-05-27 | 常州时创能源股份有限公司 | Production method for four-chamfer small cell sheet |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015043099A1 (en) * | 2013-09-26 | 2015-04-02 | 中国科学院半导体研究所 | Method for forming crystal bar with identification or chamfer and polygonal cross section, and substrate forming method, crystal bar and substrate |
| WO2021098228A1 (en) * | 2019-11-19 | 2021-05-27 | 常州时创能源股份有限公司 | Production method for four-chamfer small cell sheet |
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