CN103000711A - Improved crystal silicon, cell and solar power generating device - Google Patents
Improved crystal silicon, cell and solar power generating device Download PDFInfo
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- CN103000711A CN103000711A CN2011102902054A CN201110290205A CN103000711A CN 103000711 A CN103000711 A CN 103000711A CN 2011102902054 A CN2011102902054 A CN 2011102902054A CN 201110290205 A CN201110290205 A CN 201110290205A CN 103000711 A CN103000711 A CN 103000711A
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Abstract
The invention relates to improved crystal silicon, an improved cell and an improved solar power generating device with crystalline silicon or casting crystalline silicone or silicon alloy as the main body. The existing crystalline silicon chip and crystalline silicone cell are of quadrilateral shape with four chamfers, and due to the existing of the chamfers, the existing crystalline silicon chip and crystalline silicone cell have the disadvantages of being easy to be broken and damaged, being of low repair capacity for damaged chamfers and of low yield in the process of manufacturing and processing. In the prior art, monocrystalline silicon chips with large curvature radius and fillets are utilized to make cells which are realigned and packaged to form a crystal silicon solar power generating device, and the packaging materials are of low effective utilization rate. With the use of silicon chips and cells of convex angular structure and of small curvature radius and arc angles, the improved crystal silicon, cell and solar power generating device of the invention has the advantages of improving the yield of silicon chips, the repair ability for slight damage and the effective area utilization rate of the solar power generating device, reducing the costs and the like.
Description
Technical field
The present invention relates generally to solar battery sheet and crystal silicon chip take crystalline silicon or casting crystalline silicon or silicon alloy as main body.Casting crystal silicon chip or the crystal silicon chip that some are not cast are commonly used to make crystal silicon solar cell sheet, and crystal silicon solar cell sheet is used for making device of solar generating, for example solar cell, or title photovoltaic cell.The present invention proposes improved casting and not cast crystal silicon chip, casting crystal silicon solar cell sheet and crystal silicon solar Blast Furnace Top Gas Recovery Turbine Unit (TRT).
Background technology
Crystalline silicon (or silicon alloy) material can be divided into the molten crystal in casting crystal, pulling of crystals (rod) and district according to the difference of its manufacture method.Wherein, the casting crystalline silicon is widely used in silicon chip and the cell piece manufacturing in photovoltaic field because of lower production cost, higher production efficiency.The cast silicon crystal is distinguished from method, can be divided into crucible cast silicon crystal and cast (for example electromagnetic suspension casting) silicon crystal without crucible; Distinguish from crystal structure, can be divided into casting polycrystalline silicon and casting monocrystalline silicon.
Photovoltaic power generation apparatus is because generated output is that area is dependent, usually need a plurality of cell pieces in unit are, to compose and lay out into maximum effective area, thereby, be adapted to silicon ingot cutting and cell piece solid matter, photovoltaic adopts tetragonal contour shape usually with cell piece and silicon chip, has four angular positions.
Be different from progress in Czochralski silicon crystal or zone melting and refining silicon crystal, because of its barred body or ingot body size less, but direct slicing obtains rounded square silicon chip or the silicon chip identical with zone melting and refining silicon crystal section shape, the cast silicon crystal has larger size usually, for being made into silicon chip or cell piece, usually before section, need cast silicon crystal ingot with monoblock to be split into the silico briquette of a plurality of less four prism types, be commonly called as silicon side's ingot, then silicon side's ingot is obtained silicon chip along the direction section perpendicular to prism, for example the open CN201010238223.3 of Chinese patent application is described.
Silicon side's ingot of the four prisms cylinder that is obtained by the cutting of the casting crystalline silicon ingot of monoblock is before section, usually need to carry out chamfer machining, when being cut into silicon chip, form sharp-pointed square silicon chip bight with the rectangular edge that prevents silicon side's ingot, the latter very easily occurs damaged in silicon chip working process or subsequent treatment, and for example Chinese patent application discloses 200920159037.3 described.After the casting crystalline silicon side ingot section through chamfer machining, acquisition has the casting crystal silicon chip in the bight of chamfering outer rim.
The casting crystal silicon chip that above-mentioned conventional method is made, outward appearance is square or is non-square, four bights with four long edge wheel profiles (side line) and close outline line end, the edge in bight form the hypotenuse line that is 45 degree angles with silicon chip side line because of chamfer machining.Typical 8 inches casting crystal silicon chips, its size dimension is 156*156mm (containing chamfer site), chamfered section bit wide 0.5～3mm.
Although chamfering has avoided the right angle silicon chip to be easy to broken shortcoming, so that the rate of finished products of silicon chip processing increases, but, the position, boundary that the hypotenuse of chamfering and side form, and straight hypotenuse itself, still consisted of the fragile position of silicon chip, cause silicon chip in machine-shaping, be processed in the cell piece process and the cell piece that obtains easy impaired breaking in its angular position in subsequent treatment; Simultaneously, the hypotenuse line position of chamfering is the little unfilled corner of easy impaired formation in slicing processes, and other microlesions, is difficult to repair, and has reduced the section rate of finished products.
Summary of the invention
Therefore, one of purpose of the present invention provides novel improved casting crystal silicon chip, and improved casting crystal silicon solar cell sheet, and the novel solar power generation device that has comprised this improved casting crystal silicon solar cell sheet.Simultaneously, the invention allows for the method for making above-mentioned improved casting crystal silicon chip.Novel casting crystal silicon chip of the present invention comprises monocrystalline silicon piece and polysilicon chip; Novel casting crystal silicon solar cell sheet of the present invention comprises monocrystaline silicon solar cell sheet and polysilicon solar battery slice.
The scheme of novel casting crystal silicon chip of the present invention is achieved in that provides the casting of a kind of monocrystalline or polycrystalline crystal silicon chip, it comprises four bights, the outer rim at least one bight in four bights of described silicon chip is spirogyrate, the outer rim in the bight of described spirogyrate, comprise that outline line is for example outer rim of circular arc or elliptic arc of arc, the linear outer rims of conic such as parabola shaped or monolateral hyperbola, with outline line be for example tri linear shape or the linear outer rims of four fold of many fold-line-shapeds, and the outer rim that constitutes of crest curve and broken line.
The scheme of novel casting crystal silicon solar cell sheet of the present invention is achieved in that provides the casting of a kind of monocrystalline or polycrystalline crystal silicon solar cell sheet, it comprises four bights, the outer rim at least one bight in four bights of described cell piece is spirogyrate, the outer rim in the bight of described spirogyrate, comprise that outline line is for example outer rim of circular arc or ellipse arc of arc, the linear outer rims of conic such as parabola shaped or monolateral hyperbola, with outline line be for example tri linear shape or the linear outer rims of four fold of many fold-line-shapeds, and the outer rim that constitutes of crest curve and broken line.
Novel solar power generation device of the present invention comprises at least one casting crystal silicon solar cell sheet, encapsulate the base plate of this casting crystal silicon solar cell sheet and the panel of printing opacity, collect the lead-out terminal of the electric current of cell piece generation, wherein, the angular position that it is spirogyrate that described casting crystal silicon solar cell sheet comprises its outer margin contour at least, the outer rim in the bight of described spirogyrate, comprise that outline line is for example outer rim of circular arc or ellipse arc of arc, the linear outer rims of conic such as parabola shaped or monolateral hyperbola, with outline line be for example tri linear shape or the linear outer rims of four fold of many fold-line-shapeds, and the outer rim that constitutes of crest curve and broken line.
The circular arc radius of curvature of the arc salient of the circular arc radius of curvature in the arc-shaped convex bight (salient angle) of above-mentioned Novel silicon slice of the present invention, cell piece and the cell piece of novel solar power generation device, preferably much smaller than from the salient angle edge to silicon chip or the distance at cell piece center, more preferably less than from the salient angle edge to silicon chip or the distance at cell piece center 1/6.
A further object of the present invention, provide novel crystal silicon chip, crystalline silicon battery plate with arc-shaped convex bight, wherein, the circular arc radius of curvature in described arc-shaped convex bight is much smaller than from protruding corner edge to silicon chip or the distance at cell piece center, and more preferably less than from the salient angle edge to silicon chip or the distance at cell piece center 1/6.This have monocrystalline of small curvature radius arc chord angle or silicon chip, the cell piece of polycrystalline of the present invention, comprise the circular arc radius of curvature and equal arc edge to traditional monocrystalline silicon piece, the cell piece in the circular arc bight of the distance at cell piece center, has the bight of more protruding, the higher area of composing and laying out enriches rate, and is also more attractive in appearance.
The present invention also provides a kind of novel solar power generation device, comprise at least one crystal silicon solar cell sheet, encapsulate this crystal silicon solar cell sheet base plate and transparent panel, collect the lead-out terminal of the electric current that cell piece produces, it is characterized in that, the angular position that it is circular arc that described crystal silicon solar cell sheet comprises its outer margin contour at least, described circular arc radius of curvature less than the angular position outer rim of cell piece to 1/6 of the distance at cell piece center.Wherein, described crystal silicon solar cell sheet comprises casting crystal silicon solar cell sheet, the molten crystal silicon solar cell sheet in district, also comprises monocrystalline silicon battery sheet and polycrystalline silicon battery plate.Such device of solar generating, comprise its bight circular arc radius of curvature and equal arc edge to traditional device of solar generating of the cell piece of the distance at cell piece center, for example, tradition pulling of silicon single crystal device of solar generating, the advantage that the encapsulating material use rate is low, cost is low with unit generated output, and more attractive in appearance.
The present invention also provides a kind of above-mentioned monocrystalline or the crystal silicon chip of polycrystalline or method of casting crystal silicon chip with spirogyrate bight of making, comprise step, cutting silicon rod or silicon ingot, obtain crystalline silicon side's ingot or the casting crystalline silicon side ingot of four prism type, silicon side's ingot to four prism type is done rounding processing along the rib of major axis, and then along perpendicular to the direction of major axis this silicon side's ingot being cut into silicon chip, form the silicon chip in the bight with radiused edges outline line.
The present invention also provides another to make the method for the casting crystal silicon chip of above-mentioned monocrystalline with spirogyrate bight or polycrystalline, comprise step, to cast crystalline silicon side's ingot and do the electrochemical corrosion processing, the stronger corrosiveness at relative other positions that the point discharge effect of utilization silicon side's ingot in etchant solution has the tip, the shape with protruding outer rim is corroded at the crest line position of silicon side's ingot, and then along the direction vertical with the crest line position silicon side's ingot is cut into silicon chip.
Electrochemical corrosion of the present invention is processed, difference according to monocrystalline silicon side's ingot or polysilicon side's ingot, can take respectively different chemical corrosion liquids, wherein, for monocrystalline silicon side's ingot, can adopt acid etching solution, but preferably adopt alkaline corrosion liquid, and for polysilicon side's ingot, can adopt alkaline corrosion liquid, but preferably adopt acid etching solution.According to typical electrochemical corrosion processing method of the present invention, silicon side's ingot is placed corrosive liquid as anode, other gets graphite block and places corrosive liquid as negative electrode, between anode and negative electrode, pass to direct current by external dc power supply, adjust the size of current strength and keep reasonable time, just can obtain silicon side's ingot that the seamed edge position is etched into comparatively the curve form of projection, at this moment, the right angle intersection of the adjacent silicon face in former seamed edge position become with the curved surface of mild turnover or arc surface alternate divide a word with a hyphen at the end of a line crossing.
Above-mentioned the have monocrystalline in spirogyrate bight or crystal silicon chip or the cell piece of polycrystalline of the present invention have not breakable characteristic.Choose different rounding radius of curvature and many broken lines number, adopt FEM (finite element) model to do stress analysis, the silicon chip or the cell piece that relatively have the chamfering wheel profile, the result shows, the bight outer rim is silicon chip or the cell piece of circular arc profile, or the quadrangular silicon side ingot of rib section rounding, the compressive property in its outline line or the nearly bight of contoured surface can double; And the bight has silicon chip or the cell piece of many fold-line-shapeds outline line, and its compressive property can improve about 50%.Simultaneously, rounding is processed the direction that can change local stress, becomes favourable compressive stress state by tension stress.
Therefore, silicon chip of the present invention or cell piece will than the silicon chip of existing chamfering or cell piece cracky more not, also have higher anti-stress ability in the machine-shaping process.Simultaneously, the bight of spirogyrate has kept the space that the grinding repair process is done in the larger small breakage in Gong silicon chip bight, has reduced the grinding of the small breakage in bight and has repaired difficulty, has improved the reparation success rate.Thus, make Novel silicon slice of the present invention and cell piece from silicon side's ingot, and make novel solar power generation device of the present invention from cell piece of the present invention, higher rate of finished products and output capacity will be obtained, thereby reduced the manufacturing cost of silicon chip and cell piece, improve output level, reduced the cost of device of solar generating.
Make the process of silicon chip from silicon side's ingot, usually at least one side of silicon side's ingot of four prisms cylinder is bonded on the frock clamp with fixing silicon side's ingot temporarily.At this moment, at least one seamed edge position of silicon side's ingot and the prismatic side at place thereof be as lead-in wire terminal and the lambda line end face of line of cut, in whole cutting process, all is subject to larger cutting and impacts, and particularly cuts at the end herein cracky more of silicon chip approaching.
Novel silicon slice of the present invention, when including its outer rim and being a bight of spirogyrate, the position that is equivalent to rib of former silicon side ingot that can this bight is corresponding approaches the line inlet port end of cutting end of a period place as when cutting, silicon chip improves the section rate of finished products at the damaged probability at this position in the time of can reducing thus cutting.The silicon chip that will include a spirogyrate bight is made cell piece, and then cell piece made device of solar generating, also because the higher cell piece rate of finished products of higher silicon chip rate of finished products and corresponding acquisition and lower cell piece and device of solar generating manufacturing cost.
Of the present inventionly include the silicon chip that its outer rim is 2 adjacent corners of spirogyrate, when being cut by silicon side's ingot, permission will be corresponding to the cutting mode of a silicon face between these two the adjacent silicon side that the bight is corresponding ingots of silicon chip adjacent digonous as mucilage glue surface, so just can reduce simultaneously the silicon chip bight damage probability that the approaching at the end line of cut lead-in wire terminal of cutting and leading-out terminal cause, improve the rate of finished products of silicon chip.Similarly, of the present invention comprise its outer rim be spirogyrate 2 adjacent corners silicon cell and comprise the device of solar generating of this cell piece, owing to allow the cutting mode of the low damage probability of silicon chip, can improve the rate of finished products of crystal-silicon battery slice and crystal silicon solar Blast Furnace Top Gas Recovery Turbine Unit (TRT), reduce cost.
Of the present inventionly include the silicon chip that its outer rim is 3 adjacent corners of spirogyrate, when silicon side's ingot cuts, permission will be corresponding to the cutting mode of a face between silicon side's ingot in these adjacent two spirogyrate bights of silicon chip adjacent digonous as mucilage glue surface, simultaneously, will be corresponding to another face at the place, position of the rib of silicon side's ingot in the 3rd spirogyrate bight of silicon chip lambda line end face during as cutting, can reduce simultaneously the cutting damage probability of mucilage glue surface and lambda line end face, improve silicon chip at the grinding repair ability of the small breakage in these 3 bights, improve qualification rate and the output capacity of silicon chip, reduce the cost of silicon chip.
Similarly, of the present inventionly include the cell piece that its outer rim is 3 adjacent corners of spirogyrate, and the device of solar generating that includes this cell piece, the higher rate of finished products of its manufacture process and lower cost can be obtained.Simultaneously, 4 bights only have 3 bights to have the feature of spirogyrate outer rim, also have the difference of utilizing the bight and come the direction of mark silicon chip, cell piece and the effect of positive and negative, make silicon chip and cell piece have more operation ease and controllability in the course of processing.
The invention allows for four bight outer margin contours is silicon chip, the cell piece of spirogyrate and includes the device of solar generating of cell piece that outer margin contour is four bights of spirogyrate, they have also kept the aesthetic property of outward appearance symmetry in the advantage that can obtain higher fabrication yield and lower manufacturing cost.
According to the present invention, the spirogyrate corner edge of described casting crystal silicon chip or cell piece can be made of curved profile.Described curved profile can be the circular arc profile, also can be the ellipse arc profile, perhaps parabolic outline, continuous profile, and its edge line is respectively circular arc line and oval camber line, perhaps parabola, monolateral conic sections such as hyperbola.The radius of curvature of described circular arc or the major semiaxis of elliptic arc or semi-minor axis, the perhaps focal radius of conic section, can be greater than, the center of silicon chip or cell piece that is equal to or less than to the distance in bight, usually choose a value much smaller than this distance, for example, below 1/6 of this distance value forms the comparatively profile of projection.
According to the present invention, the spirogyrate corner edge of described silicon chip or cell piece also can be many fold-line-shapeds, and its edge line is made of many broken lines.Described many broken lines can be tri linear, four fold line or five broken lines, etc., usually, because the bight size is less, and convenient processing, can adopt the edge of tri linear, can satisfy the requirement that reduces damage probability, be convenient to again processing.
According to the present invention, the crystal silicon chip that the casting crystal silicon chip of described monocrystalline is normally cut into by the casting single crystal silicon ingot, for example, the silicon chip that the silicon side's ingot cutting with single crystal orientation basically that is cut out by the accurate monocrystalline of so-called casting or foundry single crystal rod obtains.The cell piece of being made by the casting crystal silicon chip of this monocrystalline is exactly the casting crystal silicon solar cell sheet of monocrystalline of the present invention.
Similarly, according to the present invention, the crystal silicon chip that polysilicon side's ingot cutting that the casting crystal silicon chip of described polycrystalline is normally cut out by the casting polycrystalline silicon ingot obtains, also comprise the silicon chip of the silicon side's ingot cutting acquisition that has an above crystal boundary on its cross section that is cut out by the accurate single crystal rod of so-called casting or foundry single crystal rod, the surface of this silicon chip has more than one crystal boundary.The cell piece of being made by the casting crystal silicon chip of this polycrystalline is exactly the casting crystal silicon solar cell sheet of polycrystalline of the present invention.
For obtaining the silicon chip with spirogyrate bight of tri linear shape profile of the present invention, can carry out three plain grindings to the seamed edge position of silicon side's ingot of four prisms cylinder processes, then this silicon side's ingot is cut into silicon chip, wherein, each plain grinding is got respectively different plain grinding angles, for example, take a proximal surface of silicon side's ingot seamed edge as angle reference, the angle of three plain grindings is got 30 degree successively, 45 degree, 60 degree.Similarly, a rectangular edge of silicon side's ingot is made successively the plain grinding of four different angles and processed, then cut into silicon chip, can obtain to have the silicon chip in the spirogyrate bight of the linear profile of four fold.
Further specify the present invention below in conjunction with the drawings and specific embodiments.
Description of drawings
Fig. 1 illustrates the bight with spirogyrate outer rim of Novel silicon slice of the present invention, among the figure dotted line illustrate chamfering of the prior art silicon chip its consist of the hypotenuse line of bight outer rim.
Fig. 2 illustrates the bight of the spirogyrate outer rim with circular arc of Novel silicon slice of the present invention.The radius of curvature of the dotted line R signal circular arc among the figure.
Fig. 3 illustrates the bight of Novel silicon slice of the spirogyrate outer rim with tri linear shape profile of the present invention.
Fig. 4 illustrates that the outer rim in its adjacent 2 bights of the present invention is the Novel silicon slice of circular arc, and as a comparison, 2 bights of all the other of silicon chip are common chamfering type bight.
Fig. 5 illustrates the Novel silicon slice that to have 3 its outer rims be the bight of circular arc of the present invention, and its 4th bight is common chamfering type bight.
Fig. 6 illustrates the Novel silicon slice that to have 4 its outer rims be the bight of circular arc of the present invention.
Description of reference numerals
1: the main part of silicon chip
21,22,23,24: the 1st, 2,3,4 bight of silicon chip;
31,32,33,34: the outer margin contour line in the 1st, 2,3,4 bight of silicon chip;
41,42,43,44: one of four long edge wheel profiles of silicon chip;
R: circular arc radius of curvature;
A1, a2, a3: the minor face line that consists of the outer rim in bight;
Accompanying drawing of the present invention is schematic diagram, and the shown relative size in each position among the figure according to clearly showing and making things convenient for the needs of drawing to adjust, does not represent actual ratio or size.The thickness that does not show silicon chip in the accompanying drawing.The thickness of silicon chip of the present invention, cell piece can need to and be chosen arbitrarily suitable thickness according to use, usually, is to save material, and the one-tenth-value thickness 1/10 of silicon chip of the present invention, cell piece is at 70～400um.According to the present invention, choose thinner thickness, easier embodiment product of the present invention improves rate of finished products and reduces the advantage of cost.
Embodiment
Fig. 1 illustrates the bight with spirogyrate outer rim of the silicon chip described in a kind of execution mode of casting crystal silicon chip of the present invention.The outer rim hypotenuse line in the chamfering bight of the silicon chip of the dotted line signal prior art among the figure.Fig. 1 clearly demonstrates silicon chip of the present invention, the outer margin contour in its bight, than the silicon chip bight of prior art (below the dotted line, the present invention is referred to as the straight angle), be obvious convex shape (the present invention is referred to as salient angle), but not the square projection, this is on the one hand so that two adjacent edge wheel profiles of silicon chip are crossed a bit of spirogyrate curve at the Communicating in bight gently transfers and divide a word with a hyphen at the end of a line, on the other hand, increase the entity area in bight, can be used for the small breakage of bight outer rim or damaged grinding reparation so that the bight has kept more space.The present invention finds, the acting in conjunction of these two kinds of factors can make rate of finished products raising, the disqualification rate of silicon chip reduce, thereby improves the output of silicon chip, reduces the cost of silicon chip.
In this execution mode, the silicon chip bight outer margin contour line of described convex shape can be the convex outer curve of continuous arbitrary shape, the spirogyrate curve that comprises rule, such as ellipse, parabola, monolateral conic sections such as hyperbola, or irregular spirogyrate curve, or the combination in any line of curve and broken line.
With above-mentioned silicon chip with bight of spirogyrate outer rim, make cell piece according to the manufacture method of crystal-silicon battery slice, namely obtain casting crystal silicon solar cell sheet of the present invention, it includes at least one bight with spirogyrate outer rim.This is had the cell piece in spirogyrate outer rim bight, through encapsulating and arrange the lead-out terminal of extracted current, namely obtain casting crystal silicon solar Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present invention.
Fig. 2 illustrates the bight of the spirogyrate outer rim with circular arc of the silicon chip described in a kind of execution mode of casting crystal silicon chip of the present invention.Dotted line among the figure is illustrated the radius of curvature of this circular arc.Silicon chip with bight of circular arc outer margin contour of the present invention has the silicon chip in other spirogyrate outer margin contour bights, has the ability of relatively optimum opposing breakage, and is easy to make.In the present embodiment, the radius of curvature of described circular arc can be adjusted according to the size of bight size.Usually choose radius value far below the distance value from the bight outer rim of silicon chip to the silicon chip center, be preferably lower than 1/6 of this value, and be higher than silicon chip is goed deep in the bight along the silicon chip edge line half of depth value.For 8 inches silicon chips, between its radius dominant area at 0.5～16mm, further preferred 1～8mm.
According to the proposed method, above-mentioned silicon chip with corner edge profile of circular arc, can by the seamed edge position of the silico briquette (or silicon side's ingot) of four prisms cylinder being done rounding processing, then along the direction perpendicular to seamed edge silico briquette be cut into silicon chip and obtain.
With above-mentioned silicon chip with bight of circular arc outer rim, make cell piece according to the manufacture method of crystal-silicon battery slice, namely obtain casting crystal silicon solar cell sheet of the present invention, it includes at least one bight with circular arc outer rim.With this cell piece with circular arc outer rim bight, the lead-out terminal of extracted current is set, and is packaged between base plate and the light penetrating panel, namely obtain casting crystal silicon solar Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present invention.
Fig. 3 illustrates the bight of novel casting crystal silicon chip of another execution mode of the present invention, and this bight has the spirogyrate outer rim of tri linear shape profile.Described tri linear shape profile, by three connected to one another, angles from the side line direction ladder of a side in this bight of silicon chip turn to minor face line a1, a2, the a3 of the side line direction of opposite side to form.Three different angles are made at the position of the rib of silicon side's ingot of four prisms cylinder successively, and (for example, a1 is 30 degree that take over from 41 directions among the figure, a2 45 degree that take over, a3 take over 60 the degree, etc.) plain grinding, and then with this silicon side's ingot dicing, can obtain the silicon chip of present embodiment.
Get above-mentioned silicon chip with bight of tri linear shape outer margin contour, become cell piece with processes according to a conventional method, namely obtain the casting crystal silicon solar cell sheet with bight of tri linear shape outer margin contour of the present invention.This cell piece is made solar module, namely obtain a kind of casting crystal silicon solar Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present invention.
Fig. 4 illustrates that the outer rim in its adjacent 2 bights of the present invention is the casting crystal silicon chip of circular arc, and 2 bights of all the other of silicon chip are common chamfering type bight, has the outer rim of the hypotenuse line at 45 degree or 50 degree inclination angles.Among the embodiment of present embodiment, the circular arc radius of curvature is 3mm, and the circular arc outer rim is 2mm along the degree of depth that the side line gos deep into silicon chip.An example of its manufacture method is, getting the cross section length of side is the flat column silicon side ingot of 156mm, high 230mm, with adjacent 2 roundings of four inclines, chamfering radius is 3mm, in addition 2 incline chamferings, the silicon side's ingot that obtains is placed multi-line cutting machine, wherein, the silicon face between the incline of 2 roundings is bonded on the work plate and fixes as adhesive surface, cut into silicon chip along the direction vertical with incline, obtain the Novel silicon slice of present embodiment.This silicon chip is made cell piece, and at least one this battery sheet packaging is become photovoltaic cell component, namely obtain a kind of device of solar generating of the present invention.
When being the silicon chip of arc-shaped convex from silicon side's ingot cutting manufacturing above-mentioned 2 bight outer rims of the present invention, if the circular arc position is positioned at the opposite face (namely entering edge of a knife face) of the viscose glue stationary plane of silicon side's ingot, the cutting test of 30 silicon side's ingots, little unfilled corner, unfilled corner silicon chip occurrence rate add up to 1.81%; If the circular arc position is positioned at the viscose glue stationary plane (namely going out edge of a knife face) of silicon side's ingot, the cutting test of 30 silicon side's ingots, little unfilled corner, unfilled corner silicon chip occurrence rate add up to 0.77%, obviously reduce, wherein, most little unfilled corners damaged being repaired behind the bight of grinding projection.
Fig. 5 illustrates the execution mode of Novel silicon slice in the bight that to have 3 its outer rims be circular arc of the present invention, and its 4th bight is common chamfering type bight, has the outer rim of the hypotenuse line at 45 degree inclination angles.Among the embodiment of present embodiment, the circular arc radius of curvature is 2mm, and the circular arc outer rim is 1.5mm along the degree of depth that the side line gos deep into silicon chip.An example of its manufacture method is, getting the cross section length of side is the flat column silicon side ingot of 156mm, high 210mm, adjacent 3 roundings with four inclines, chamfering radius is 2mm, 1 incline chamfering in addition, the silicon side's ingot that obtains is placed multi-line cutting machine, wherein, silicon face between the incline of 2 roundings is as adhesive surface, be bonded on the work plate and fix, the 3rd the incline position through rounding as the line of cut end of incoming cables, cut into silicon chip along the direction vertical with incline, obtain the Novel silicon slice of present embodiment.This silicon chip is made cell piece, and at least one this battery sheet packaging is become photovoltaic cell component, namely obtain a kind of device of solar generating of the present invention, the outer rim in 3 bights of its cell piece is circular arc.
Fig. 6 illustrates the execution mode of Novel silicon slice in the bight that to have 4 its outer rims be circular arc of the present invention.Wherein, the circular arc radius of curvature of circular arc outer rim is 6mm, circular arc incision silicon chip side line 3mm.This silicon chip is processed through conventional batteries sheet manufacture crafts such as surface wool manufacturing, diffusion pn knot processed, corrosion dephosphorization silex glass, etching edge, coated with antireflection film, electrode printing, sintering, made a kind of novel crystal silicon solar cell that its outer rim is 4 bights of circular arc that has of the present invention.At least one this battery sheet packaging is become photovoltaic cell component, namely obtain a kind of device of solar generating of the present invention, the outer rim in 4 bights of its cell piece is circular arc.
The outer rim of making 4 bights of the above-mentioned embodiment of the present invention is silicon chip or the cell piece of circular arc, can adopt cast silicon crystal ingot, for example casting single crystal or casting polycrystalline silicon ingot, also can adopt the molten crystal ingot in district, for example the horizontal zone melting single crystal rod of cuboid can also adopt the pulling of crystals rod.In rear a kind of execution mode, the pulling of crystals rod is cut into first the four prism type crystal ingot along major diameter, again rounding processing is done by four rib sections of crystal ingot, and to 1/6 of silicon chip centre distance, then section obtains silicon chip to the circular arc radius of curvature of its rounding less than circular arc.Obtain like this monocrystalline silicon piece, the bight of its circular arc has less circular arc radius of curvature, device of solar generating of the present invention can be composed and laid out, is packaged into to the cell piece that a plurality of thus silicon chips are made.This device of solar generating has the drift angle gap between less cell piece, and is not only attractive in appearance, and area utilization improves the encapsulating material cost of unit generated output, cost of electricity-generating reduction.By contrast, the silicon chip that the pulling of crystals rod is made by existing technique, its arc chord angle has than orthodrome radius of curvature (its radius is the radius of turn of vertical pulling crystal bar), be packaged into battery component after making cell piece, has larger void area between the bight of each cell piece, not only not attractive in appearance, and wasted the area that takes up room of assembly, reduced the utilance of encapsulating material.
A mutation as above-mentioned embodiment, perhaps reduction procedure, the present invention proposes crystal silicon chip or crystalline silicon battery plate that the outer rim of only having 1～3 bight is circular arc, the circular arc radius of curvature in its bight is got 1/6～1/20 of this distance usually much smaller than arc edge to silicon chip centre distance.A plurality of this kind cell pieces can be composed and laid out, encapsulate and make a kind of device of solar generating of the present invention.
Make among the embodiment of electrochemical etching method of the crystal silicon chip with spirogyrate bight of the present invention, the crystalline silicon ingot of monocrystalline or polycrystalline or silicon rod are cut into first silicon side's ingot of four prism type, then place by strong oxidizer, in the acid etching solution that hydrofluoric acid and buffer solution form, at least one seamed edge of silicon side's ingot is submerged into corrosive liquid, silicon side's ingot is linked to each other with the positive pole of DC power supply, power cathode is connected on the graphite electrode that places corrosive liquid, pass into electric current 1～10A, process 10～100min, take out silicon side's ingot, clean, insert in the multi-line cutting machine and cut into slices along the direction perpendicular to seamed edge, namely obtain to have the crystal silicon chip at least one spirogyrate bight.
The electrochemical etching method that the present invention uses has corrosive effect heterogeneous, and silicon ingot will be higher than the side at the etching extent at seamed edge position, and the effect that therefore can obtain to remove Sharp edge is at the curved surface of the former seamed edge position of silicon ingot formation spirogyrate.
Make among another embodiment of electrochemical etching method of the crystal silicon chip with spirogyrate bight of the present invention, the crystalline silicon ingot of monocrystalline or polycrystalline or silicon rod are cut into first silicon side's ingot of four prism type, then place alkali corrosion liquid, at least one seamed edge of silicon side's ingot is submerged into corrosive liquid, silicon side's ingot is linked to each other with the positive pole of DC power supply, power cathode is connected on the graphite electrode that places corrosive liquid, pass into electric current 0.5～5A, process 8～80min, take out silicon side's ingot, clean, insert the multi-line cutting machine section, namely obtain to have the crystal silicon chip at least one spirogyrate bight.
When making the silicon chip in spirogyrate of the present invention bight, silicon ingot approaches at the end in section, silicon ingot improves the tolerance of impacts of mortar, crackle, unfilled corner, little unfilled corner probability have been reduced, the damage that reduction cutting stress, temperature stress cause, improve the cutting mortar flow and the linear speed permissible value that closely go out the edge of a knife, reduced stria, hard spot fault.Simultaneously, the bight of evagination allows larger damaged grinding space, bight, and increases the effective area of silicon chip, therefore, can obtain higher output capacity and lower manufacturing cost.
The cell piece in spirogyrate of the present invention bight because stronger anti-stress ability has reduced the process loss in the cell piece processing technology, has improved the output capacity of cell piece; Simultaneously, the bight of spirogyrate has also increased the effective area that absorbing light energy generates electricity.
Compare the present invention, traditional casting crystal silicon chip, cell piece, its bight all is single chamfering structure, is to make the single chamfer machining and then cut into silicon chip at the prismatic position of four prism type silicon ingot.Because the grinding during the single chamfering needs a grinding to put in place, and press the miter angle grinding, the removal amount of grinding is larger, and grinding is removed silico briquette is formed larger impact, very easily causes stress damage and mechanical damage in the chamfer site part, form micro-crack, the latter is for the silicon crystal of fragility, and the impact that it is subjected to the factors such as temperature, vibrations, pressure very easily is extended to the breakage of little unfilled corner even unfilled corner, thereby affected rate of finished products, improved manufacturing cost.
Therefore, crystal silicon chip of the present invention, cell piece, more traditional silicon chip, cell piece have rate of finished products height, advantage that cost is low, and its device of solar generating of making has the integrated cost advantage of can not ignore.
Crystal silicon chip of the present invention and cell piece, comprise the crystal silicon chip and the cell piece that contain various dopants, for example contain silicon chip and cell piece based on the needed P type of cell piece performance basis dopant boron, gallium or N-type doping agent phosphorus, antimony, contain performance improver for example crystal silicon chip, the cell piece of germanium.Wherein, dopant content generally is no more than 49%, for example, and the crystal silicon chip of germanic about 5～10000ppm and the cell piece made of silicon chip thus.
Those skilled in the art is apparent, in the situation that does not depart from scope of the present invention or design, can make various modifications and distortion to disclosed structure and method.
Specification of the present invention and embodiment are exemplary, consider the invention spirit that specification and practice disclose herein, and those skilled in the art is other embodiments of the present invention obviously.
Claims (10)
1. the casting crystal silicon chip of a monocrystalline or polycrystalline comprises four bights, and feature of the present invention is that the outer rim at least one bight of described silicon chip is spirogyrate.
2. casting crystal silicon chip according to claim 1 is characterized in that, the outer rim in 2 adjacent bights of described silicon chip is spirogyrate.
3. described casting crystal silicon chip according to claim 1～2, it is characterized in that optional one or more the male rotor profile that is combined to form in circular arc, ellipse arc, parabola shaped, monolateral hyperbola, many fold-line-shapeds of cause consists of outside the described spirogyrate bight.
4. the casting crystal silicon solar cell sheet of a monocrystalline or polycrystalline comprises four bights, and feature of the present invention is, described cell piece the outer rim at least one bight be spirogyrate.
5. casting crystal silicon solar cell sheet according to claim 4 is characterized in that, the outer rim in 2 adjacent bights of described cell piece is spirogyrate.
6. described casting crystal silicon solar cell sheet according to claim 4～5, it is characterized in that optional one or more the male rotor profile that is combined to form in circular arc, ellipse arc, parabola shaped, monolateral hyperbola, many fold-line-shapeds of cause consists of outside the described spirogyrate bight.
7. make the method for the crystal silicon chip in the bight with circular arc outer rim, it is characterized in that, crystalline silicon side's ingot of four prism type is done rounding processing along the rib of major axis, and then cut into silicon chip along the direction perpendicular to major axis.
8. make the method for the crystal silicon chip in the bight with spirogyrate outer rim, it is characterized in that, crystalline silicon side's ingot of four prism type is done electrochemical corrosion process, and then cut into silicon chip.
9. device of solar generating, the lead-out terminal that comprises the electric current of at least one panel of casting crystal silicon solar cell sheet, the base plate that encapsulates this casting crystal silicon solar cell sheet and printing opacity, the generation of collection cell piece, it is characterized in that described casting crystal silicon solar cell sheet comprises the angular position that its outer margin contour is spirogyrate at least.
10. device of solar generating, comprise at least one crystal silicon solar cell sheet, encapsulate the base plate of this crystal silicon solar cell sheet and printing opacity panel, collect the lead-out terminal of the electric current that cell piece produces, it is characterized in that, the angular position that it is circular arc that described crystal silicon solar cell sheet comprises its outer margin contour at least, the radius of curvature of described circular arc is less than 1/6 of the distance from the angular position outer rim of cell piece to the cell piece center.
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| CN103730524A (en) * | 2013-12-19 | 2014-04-16 | 锦州阳光能源有限公司 | Silicon wafer capable of increasing power of solar cell |
| CN105322036A (en) * | 2014-07-17 | 2016-02-10 | 英属开曼群岛商精曜有限公司 | Solar module and manufacturing method thereof |
| CN108963020A (en) * | 2017-05-27 | 2018-12-07 | 苏州沃特维自动化系统有限公司 | A kind of solar battery sheet screening structure and photovoltaic module |
| WO2019042055A1 (en) * | 2017-08-30 | 2019-03-07 | 米亚索乐装备集成（福建）有限公司 | Solar cell and cutting method and device therefor |
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| CN110828612A (en) * | 2019-11-19 | 2020-02-21 | 常州时创能源科技有限公司 | Preparation method of four-chamfer small cell |
| WO2021098227A1 (en) * | 2019-11-19 | 2021-05-27 | 常州时创能源股份有限公司 | Preparation method for small battery cell having four chamfers |
| WO2021098228A1 (en) * | 2019-11-19 | 2021-05-27 | 常州时创能源股份有限公司 | Production method for four-chamfer small cell sheet |
| US11742453B2 (en) | 2019-12-11 | 2023-08-29 | Jinko Solar Co., Ltd. | Method for manufacturing monocrystalline silicon wafer containing arced side, method for manufacturing monocrystalline silicon cell, and photovoltaic module |
| CN111029440A (en) * | 2019-12-11 | 2020-04-17 | 晶科能源有限公司 | Single crystal battery and manufacturing method of single crystal silicon wafer |
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