CN202247006U - Solar monocrystalline silicon piece - Google Patents
Solar monocrystalline silicon piece Download PDFInfo
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- CN202247006U CN202247006U CN201120333107XU CN201120333107U CN202247006U CN 202247006 U CN202247006 U CN 202247006U CN 201120333107X U CN201120333107X U CN 201120333107XU CN 201120333107 U CN201120333107 U CN 201120333107U CN 202247006 U CN202247006 U CN 202247006U
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- silicon piece
- piece
- monocrystalline silicon
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Abstract
The utility model discloses a solar monocrystalline silicon piece, which is a square thin piece comprising an upper plane and a lower plane which are parallel, and the four corners of the square thin piece are respectively circular arc. According to the utility model, the solar monocrystalline silicon piece can not has short corner phenomena and is not easy to have broken edge phenomena after being cut; when the end surface of the silicon piece is processed, the destructive broken gaps can not be easily produced, so that the production yield and the post processing of the silicon piece are improved; relative to chamfering, the usable area of the silicon piece is enlarged after fillet corner grinding, so that the power generation efficiency is improved, simultaneously, the edge surface quality is improved; and the thickness of the silicon piece is reduced to 160+/+4 mum from the original 200+/-20mum, so that the output rate of the silicon piece is improved.
Description
Technical field
The utility model relates to the solar silicon wafers processing industry, relates in particular to a kind of solar level monocrystalline silicon piece.
Background technology
In the solar silicon wafers processing industry, whole cutting process is that the steel wire band the cutting of mortar high-speed motion completion to the silicon material at present, and silicon chip has the corner angle burr to collapse the limit through the cutting back edge surface even the crack arranged or other defective, and edge surface is more coarse.In addition,, in transportation, the course of processing, cause unfilled corner more easily, collapse phenomenons such as broken, have a strong impact on the good article rate that silicon chip is produced because silicon chip is the right angle for four jiaos.
The utility model content
Goal of the invention: the purpose of the utility model is to be difficult for causing unfilled corner in order to solve the deficiency of prior art, to provide a kind of, to be difficult for collapsing broken solar level monocrystalline silicon piece.
Technical scheme: in order to realize above purpose, the described a kind of solar level monocrystalline silicon piece of the utility model, its body are the square sheet that upper and lower two parallel planess are formed, and four angles of this square sheet are circular arc.
Broken in order to be difficult for collapsing, and be beneficial to processing, the arc chord angle of said circular arc is preferably 90 °.
In order to increase useful area, improve generating efficiency, the radius of said circular arc is 15～16mm.
The thickness of said body is preferably 160 ± 4 μ m, further is preferably 160 μ m.
Beneficial effect: can not cause unfilled corner after the solar level monocrystalline silicon piece cutting that the utility model provides, be difficult for collapsing the limit, and when processing silicon chip end face, be not easy to produce destructive chipping, improve the good article rate of silicon chip production and the rate of utilization of post-production; For chamfering, increased the silicon chip useful area behind the rounding angle, improved generating efficiency, also improved the edge surface quality simultaneously; The thickness of silicon chip is reduced to 160 ± 4 μ m by 200 ± 20 original μ m, has improved the piece rate of silicon chip.
Description of drawings
Fig. 1 is the vertical view of the utility model;
Fig. 2 is the left view of the utility model.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, further illustrate the utility model.
Like Fig. 1, the solar level monocrystalline silicon piece shown in 2; Its body 1 is the square sheet that upper and lower two parallel planess are formed, and the length of side of this square sheet (L1) is 125mm, and its four angles are circular arc 2; The arc chord angle of this circular arc 2 is 90; Be that angle (a) is 90 °, the radius of circular arc 2 (R) is 15.5mm (in 15～16mm scope all can), and this square sheet is included circular arc 2 and is 156mm in interior entire length (L2).The thickness of this body 1 (d) is 160 μ m (in 160 ± 4 scopes all can).Body surface is smooth, smooth, indefectible.
The utility model working method is earlier silicon chip to be cut into the ultra-thin solar level monocrystalline silicon piece that thickness is 160 ± 4 μ m, adopts the rounding machine again, 4 square edges that cut into silicon chip is handled forming circular arc through wheel grinding.
The thickness of the utility model is thinner than existing regular solar level monocrystalline silicon piece, and the thickness of solar level monocrystalline silicon piece is reduced to 160 μ m by original 200, and piece rate increases to 58 slices/kilogram; Improved 13% piece rate, reduced silicon material loss about 13%, with 50 slices/kilogram of original piece rates; 8 of every kilogram of fecund; Voluminous 8000 per ton,, can increase income 14.4 ten thousand yuan if every is 18 yuan.Owing to cut into circular-arcly, it is block that silicon ingot clout after the cutting becomes, and can melt down once more and utilize, and saves production cost, but 40 kilograms of economical with materials per ton, if price per ton is 3000 yuan, 120,000 yuan of the Renminbi of practicing thrift per ton.
The foregoing description only is the technical conceive and the characteristics of explanation the utility model, its objective is to let to be familiar with the also enforcement according to this of content that these those skilled in the art can understand the utility model, can not limit the protection domain of the utility model with this.All equivalents or modifications of having done according to the utility model spirit all should be encompassed within the protection domain of the utility model.
Claims (5)
1. solar level monocrystalline silicon piece, its body (1) are the square sheet that upper and lower two parallel planess are formed, and it is characterized in that: four angles of described square sheet are circular arc (2).
2. solar level monocrystalline silicon piece according to claim 1 is characterized in that: the arc chord angle (a) of said circular arc (2) is 90 °.
3. solar level monocrystalline silicon piece according to claim 1 and 2 is characterized in that: the radius (R) of said circular arc (2) is 15～16mm.
4. solar level monocrystalline silicon piece according to claim 1 is characterized in that: the thickness of said body (1) is 160 ± 4 μ m.
5. solar level monocrystalline silicon piece according to claim 1 is characterized in that: the thickness of said body (1) is 160 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120333107XU CN202247006U (en) | 2011-09-06 | 2011-09-06 | Solar monocrystalline silicon piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120333107XU CN202247006U (en) | 2011-09-06 | 2011-09-06 | Solar monocrystalline silicon piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202247006U true CN202247006U (en) | 2012-05-30 |
Family
ID=46108276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120333107XU Expired - Fee Related CN202247006U (en) | 2011-09-06 | 2011-09-06 | Solar monocrystalline silicon piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202247006U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103341692A (en) * | 2013-06-26 | 2013-10-09 | 京东方科技集团股份有限公司 | Method for cutting irregular figure substrate and display device |
| CN109360852A (en) * | 2018-08-14 | 2019-02-19 | 上海芯石微电子有限公司 | A kind of wafer chamfering structure and method reducing chip thinning fragment rate |
| WO2019042055A1 (en) * | 2017-08-30 | 2019-03-07 | 米亚索乐装备集成（福建）有限公司 | Solar cell and cutting method and device therefor |
-
2011
- 2011-09-06 CN CN201120333107XU patent/CN202247006U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103341692A (en) * | 2013-06-26 | 2013-10-09 | 京东方科技集团股份有限公司 | Method for cutting irregular figure substrate and display device |
| US9416041B2 (en) | 2013-06-26 | 2016-08-16 | Beijing Boe Display Technology Co., Ltd. | Method for cutting substrate of irregular pattern and display device |
| US10414683B2 (en) | 2013-06-26 | 2019-09-17 | Boe Technology Group Co., Ltd. | Method for cutting substrate of irregular pattern and display device |
| WO2019042055A1 (en) * | 2017-08-30 | 2019-03-07 | 米亚索乐装备集成（福建）有限公司 | Solar cell and cutting method and device therefor |
| CN109360852A (en) * | 2018-08-14 | 2019-02-19 | 上海芯石微电子有限公司 | A kind of wafer chamfering structure and method reducing chip thinning fragment rate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20180906 |