CN202217669U - Ultrathin solar energy level silicon slice - Google Patents

Abstract

The utility model discloses an ultrathin solar energy level silicon slice, wherein the ultrathin solar energy level silicon slice body is a square thin slice, at least one of four angles of the square thin slice is a 45 DEG chamfer. In the ultrathin solar energy level silicon slice provided by the utility model, a chamber is 45 DEG, the force is stable, no unfilled corner or edge collapse are caused after cutting; when an end surface of the silicon slice is machined, no destructive edge crack is easily caused, the non-defective product yield of silicon slice production and the utilization ratio of follow-up machining are improved; the thickness of the ultrathin solar energy level silicon slice is reduced to 160 plus or minus 4 mu m from the original 200 plus or minus 20 mu m, and the silicon slice production rate is improved.

Description

A kind of ultra-thin solar silicon slice

Technical field

The utility model relates to the solar silicon wafers processing industry, relates in particular to a kind of ultra-thin solar silicon slice.

Background technology

In the solar silicon wafers processing industry, whole cutting process is that the steel wire band the cutting of mortar high-speed motion completion to the silicon material at present, and silicon chip has the corner angle burr to collapse the limit through the cutting back edge surface even the crack arranged or other defective, and edge surface is more coarse.In addition,, in transportation, the course of processing, cause unfilled corner more easily, collapse phenomenons such as broken, have a strong impact on the yields that silicon chip is produced because silicon chip is the right angle for four jiaos.

The utility model content

Goal of the invention: the purpose of the utility model is to be difficult for causing unfilled corner in order to solve the deficiency of prior art, to provide a kind of, to be difficult for collapsing broken ultra-thin solar silicon slice.

Technical scheme: in order to realize above purpose, the described a kind of ultra-thin solar silicon slice of the utility model, its body are the square sheet that upper and lower two parallel planes are formed, and at least one is 45 ° of chamferings in four angles of described square sheet.

The thickness of said body is preferably 160 ± 4 μ m.

The thickness of said body further is preferably 160 μ m.

Beneficial effect: the chamfering of the ultra-thin solar silicon slice that the utility model provides is 45 °; Stability under loading can not cause unfilled corner, be difficult for collapsing the limit after cutting, and when processing silicon chip end face; Be not easy to produce destructive chipping, improved the yields of silicon chip production and the utilization rate of post-production; The thickness thickness of ultra-thin solar silicon slice is reduced to 160 ± 4 μ m by 200 ± 20 original μ m, unit silicon ingot slice number has been improved 13%, improved the piece rate of silicon chip.

Description of drawings

Fig. 1 is the vertical view of the utility model;

Fig. 2 is the left view of the utility model.

Embodiment

Below in conjunction with accompanying drawing and specific embodiment, further illustrate the utility model.

Like Fig. 1, ultra-thin solar silicon slice shown in Figure 2, its body 1 is the square sheet that upper and lower two parallel planes are formed, and four angles of this square sheet are 45 ° of chamferings, and promptly angle (a) is 45 °.The thickness of this body 1 (d) is 160 μ m (in 156～164 scopes all can).Body surface is smooth, smooth, indefectible.

The utility model processing method is earlier silicon chip to be cut into the ultra-thin solar silicon slice that thickness is 160 ± 4 μ m; Adopt edging machine again; 4 edge angle grindings of cutting back silicon chip are trapezoidal; Silicon chip edge is carried out chamfered, and directly silicon ingot being cut into the cross section is that the length of side is square, four jiaos of 45 ° of chamferings for equating of 156*156mm, diagonal distance is the anistree square cylinder of 219mm.

The thickness of the utility model is thinner than existing regular solar level silicon wafer, and the thickness of ultra-thin solar silicon slice is reduced to 160 μ m by original 200, and piece rate increases to 58 slices/kilogram; Improved 13% piece rate, reduced silicon material loss about 13%, with 50 slices/kilogram of original piece rates; 8 of every kilogram of fecund; Voluminous 8000 per ton,, can increase income 120,000 yuan if every is 15 yuan.Owing to cut into 45 ° of chamferings, it is block that the silicon ingot clout after the cutting becomes, and can melt down once more and utilize, and saves production cost, but 35 kilograms of economical with materials per ton, if price per ton is 3000 yuan, 10.5 ten thousand yuan of the RMB of practicing thrift per ton.

The foregoing description only is the technical conceive and the characteristics of explanation the utility model, its objective is to let to be familiar with the also enforcement according to this of content that these those skilled in the art can understand the utility model, can not limit the protection range of the utility model with this.All equivalents or modifications of having done according to the utility model spirit all should be encompassed within the protection range of the utility model.

Claims (3)

1. ultra-thin solar silicon slice, its body (1) are the square sheet that upper and lower two parallel planes are formed, and it is characterized in that: at least one is 45 ° of chamferings in four angles of described square sheet.

2. ultra-thin solar silicon slice according to claim 1 is characterized in that: the thickness of said body (1) is 160 ± 4 μ m.

3. ultra-thin solar silicon slice according to claim 1 is characterized in that: the thickness of said body (1) is 160 μ m.

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