CN202205764U

CN202205764U - Solar-grade polycrystalline silicon wafer

Info

Publication number: CN202205764U
Application number: CN 201120332873
Authority: CN
Inventors: 甘大源; 刘坤; 张顺怡; 黄志明
Original assignee: TAICANG GOLDEN CONCORD PHOTOVOLTAIC TECHNOLOGY Co Ltd
Current assignee: TAICANG GOLDEN CONCORD PHOTOVOLTAIC TECHNOLOGY Co Ltd
Priority date: 2011-09-06
Filing date: 2011-09-06
Publication date: 2012-04-25
Anticipated expiration: 2021-09-06

Abstract

The utility model discloses a solar-grade polycrystalline silicon wafer. The main body of the solar-grade polycrystalline silicon wafer is a square sheet which consists of an upper plane and a lower plane which are parallel to each other, wherein a 60-DEG angle is formed between each chamfer of each of four corners of the square sheet and an edge. Compared with the prior art, the solar-grade polycrystalline silicon wafer has the advantages that: the solar-grade polycrystalline silicon wafer is machined by a precision machine tool, the process is simple, the precision is high, the cut left material can be recycled, and the cost is effectively saved; a barrel finishing process is saved, edges and corners are prevented from being broken or cracked, and the yield is improved; compared with the conventional 45-DEG chamber, the 60-DEG angle between the chamber and the edge has the advantages that the usable area of the silicon wafer is enlarged; and compared with the conventional silicon wafer, the silicon wafer has the advantages that the thickness of the silicon wafer is reduced greatly from 200 mu m to 170+/-10 mu m, and the yield of silicon wafers is greatly improved.

Description

The solar-grade polysilicon sheet

Technical field

The utility model relates to the solar silicon wafers field, relates in particular to a kind of solar-grade polysilicon sheet.

Background technology

In the solar silicon wafers processing industry, what adopt during the cutting silicon ingot is the steel wire cutting method at present, cuts silicon ingot to obtain the silicon chip of respective thickness through the high-speed friction of steel wire and silicon ingot.Because domestic silicon wafer material shortage costs an arm and a leg, so conservation, the rate of finished products that improves silicon chip becomes necessary.Traditional solar silicon wafers is a square sheet, four rounding of angle angles, and thickness is all more than 200 μ m.There is certain problem man-hour in the silicon chip of this type of cross section shape adding: the one, when the barreling fillet, can produce Powdered scrap, can wave in air contaminated environment and can not recycling of this scrap; The 2nd, add in barreling and to be easy to generate corner angle man-hour and to collapse quality problems such as limit and explosion, have a strong impact on the qualification rate of product.In the prior art, four jiaos of solar silicon wafers is 45 ° of chamferings, and the usable area that it has reduced silicon chip has reduced generating efficiency.

The utility model content

Goal of the invention: the purpose of the utility model is in order to solve the deficiency of prior art, the solar-grade polysilicon that a kind of cost is low, yields is high, generating efficiency is high sheet to be provided.

Technical scheme: in order to realize above purpose, the described a kind of solar-grade polysilicon sheet of the utility model, its body are the square sheet that upper and lower two parallel planes are formed, and the chamfering at four angles of this square sheet becomes 60 ° of angles with seamed edge.

The thickness of said body is preferably 170 ± 10 μ m.

The thickness of said body further is preferably 170 μ m.

Beneficial effect: the solar-grade polysilicon sheet that the utility model provides compared with prior art has the following advantages:

1, processed by precision machine tool, its technology is simple, precision is high, and the clout of cutting can continue to recycle the effectively cost of having practiced thrift;

2, avoided the barreling manufacturing procedure, prevented that corner angle from collapsing the generation of limit and explosion, improved yields;

3, chamfering becomes 60 ° of angles with seamed edge, compares the usable area that has increased silicon chip with existing 45 ° of chamferings, has improved generating efficiency;

4, silicon wafer thickness is 170 ± 10 μ m, compares with traditional 200 μ m silicon chips, and thickness significantly reduces, and has improved the rate of output of silicon chip greatly.

Description of drawings

Fig. 1 is the vertical view of the utility model;

Fig. 2 is the left view of the utility model.

Embodiment

Below in conjunction with accompanying drawing and specific embodiment, further illustrate the utility model.

Like Fig. 1, solar-grade polysilicon sheet shown in Figure 2, its body 1 is the square sheet that upper and lower two parallel planes are formed, and the chamfering at four angles of this square sheet becomes 60 ° of angles with seamed edge, and promptly angle (a) is 60 °.The thickness of this body 1 (d) is 170 μ m (in 160～180 scopes all can).The angularity of body 1≤75 μ m, body 1 smooth surface, smooth, indefectible.

The utility model processing method is earlier silicon chip to be cut into the ultra-thin solar level polysilicon sheet that thickness is 170 μ m; Adopt edging machine again, 4 edge angle grindings of cutting the back silicon chip are trapezoidal, silicon chip edge is carried out chamfered; Directly silicon ingot is cut into four chamferings and become 60 ° of angles with seamed edge; Like angle among Fig. 1 (a) is 60 °, and the length of side is 156*157mm, and diagonal distance is the anistree square cylinder of 219.5mm.

The thickness of the utility model is thinner than existing regular solar level silicon wafer, and the thickness of solar energy-level silicon wafer is reduced to 170 by original 200, and piece rate increases to 55 slices/kilogram; Improved 9% piece rate, reduced silicon material loss 8%, with 50 slices/kilogram of original piece rates; 5 of every kilogram of fecund; Voluminous 5000 per ton,, can increase income 75000 yuan if every is 15 yuan.Owing to cut into 60 ° of chamferings, it is block that the silicon ingot clout after the cutting becomes, and can melt down once more and utilize, and saves production cost, but 20 kilograms of economical with materials per ton, if price per ton is 3000 yuan, 60,000 yuan of the RMB of practicing thrift per ton.

The foregoing description only is the technical conceive and the characteristics of explanation the utility model, its objective is to let to be familiar with the also enforcement according to this of content that these those skilled in the art can understand the utility model, can not limit the protection range of the utility model with this.All equivalents or modifications of having done according to the utility model spirit all should be encompassed within the protection range of the utility model.

Claims

1. solar-grade polysilicon sheet, its body (1) are the square sheet that upper and lower two parallel planes are formed, and it is characterized in that: the chamfering at four angles of described square sheet becomes 60 ° of angles with seamed edge.

2. solar-grade polysilicon sheet according to claim 1 is characterized in that: the thickness of said body (1) is 170 ± 10 μ m.

3. according to the solar-grade polysilicon sheet of claim 1, it is characterized in that: the thickness of said body (1) is 170 μ m.