CN205310084U - Multi -parameter R value chamfer emery wheel - Google Patents
Multi -parameter R value chamfer emery wheel Download PDFInfo
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- CN205310084U CN205310084U CN201521054842.1U CN201521054842U CN205310084U CN 205310084 U CN205310084 U CN 205310084U CN 201521054842 U CN201521054842 U CN 201521054842U CN 205310084 U CN205310084 U CN 205310084U
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Abstract
The utility model discloses a multi -parameter R value chamfer emery wheel, multi -parameter R value chamfer emery wheel's recess count more than or equal to 4, the cross -section of recess is the circular arc, the radius of circular arc is 0.1mm~0.4mm, the recess radius divide into more than two sets of, the radius imbalance of every group. The utility model discloses 1 a plurality of R value parameter of emery wheel is adopted in new design, and conventional design usually need be according to the difference of product and change the emery wheel, and the multi -parameter R value chamfer emery wheel emery wheel that does not need to be changed has usually improved efficiency. The R value of the multi -parameter R value chamfer emery wheel difference of can predesigning, both the clients' requirement diversified requirement can be satisfied, also purchase cycle and cost can be reduced. Multi -parameter R value chamfer emery wheel adds man -hour through different recess processing, collapses limit and the silicon chip back periphery defect creation condition of extending for improving in the chamfer course of working silicon chip.
Description
Technical field
The utility model discloses multiparameter R value chamfering grinding wheel, it relates to silicon chip chamfer machining, belongs to field of machining.
Background technology
Silicon is good semi-conductor, because the reserves of silicon are big, the relative gallium arsenide of price is relatively more cheap, is widely used in microelectronics, the fields such as sun power. The characteristic of silicon semiconductor, doping different substances (part 3 valency or 5 valency elements) just can present different conductive characteristics, secondly, it is also possible to being oxidized, Si oxide is isolator, therefore can be used as isolation. The use of silicon is extensive, and demand is big.
Quartz (i.e. silicon oxide) generates thick silicon through carbon, high temperature, and chemical industry generates essence silicon after processing, then generates silicon single crystal through drawing by high temperature, mostly is silicon rod, cuts into silicon chip through cutting machine. The edge of silicon chip is usually rectangular and has microdefect, it is necessary to chamfering improves the physical state of silicon chip edge. Silicon chip has through cutting back edge surface and collapses limit and even have crack or other defect, and edge surface is more coarse. In order to increase silicon slicing edge physical strength, reduce particle contamination, will be circular arc shape or trapezoidal by its edge grind. Silicon chip is carried out the advantage that chamfering can make it have, avoid stress to concentrate by chamfering grinding wheel.
The chamfering grinding wheel for silicon chip of conventional design is the radius groove such as multiple, it is necessary to replacing according to different product specifications, replacing construction is long, and efficiency is low, is unfavorable for the processing of variant production; Chamfering grinding wheel procurement cycle length (being generally 2 to 3 months) of silicon chip, cost height.
Practical novel content
For deficiency of the prior art.
The utility model discloses multiparameter R value chamfering grinding wheel, it is characterised in that, the groove number of described multiparameter R value chamfering grinding wheel is more than or equal to 4, the cross section of described groove is circular arc, the radius of described circular arc is 0.1mm～0.4mm, and described groove radius is divided into more than two, and the radius often organized is inequal.
The groove radius of described multiparameter R value chamfering grinding wheel is divided into 2～4 groups.
The groove radius of described multiparameter R value chamfering grinding wheel is 4 groups, and each group groove radius is respectively 0.4mm, 0.3mm, 0.2mm, 0.1mm.
The close groove radius change in described multiparameter R value chamfering grinding wheel position is 0.02mm～0.03mm.
The groove radius of described multiparameter R value chamfering grinding wheel is 4 groups, and each group groove radius is respectively 0.4mm, 0.38mm, 0.36mm, 0.34mm.
The utility model newly designs and adopts 1 multiple R value parameter of emery wheel, and conventional design needs to change emery wheel according to the difference of product usually, and multiparameter R value chamfering grinding wheel does not need replacing emery wheel usually, it is to increase efficiency. Multiparameter R value chamfering grinding wheel can design different R values in advance; Both the requirement of customer requirement diversity can have been met, it is also possible to reduce procurement cycle and cost. Multiparameter R value chamfering grinding wheel adds man-hour by different Pocket Machining, delays periphery defect creation condition for improving silicon chip in chamfer machining process outside collapsing limit and silicon chip.
Accompanying drawing explanation
Fig. 1 is the sectional view of multiparameter R value chamfering grinding wheel;
Fig. 2 is the right view of multiparameter R value chamfering grinding wheel;
Fig. 3 is the vertical view of multiparameter R value chamfering grinding wheel;
Fig. 4 is the sectional view waiting R value chamfering grinding wheel;
In figure: 1, the first groove, the 2, the 2nd groove, the 3, the 3rd groove, the 4, the 4th groove.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described further.
Embodiment 1:
The utility model discloses the groove number of multiparameter R value chamfering grinding wheel and equal 4, the cross section of groove is circular arc, and the radius of circular arc is 0.1mm～0.4mm, and groove radius is divided into more than two, and the radius often organized is inequal.
The groove radius of multiparameter R value chamfering grinding wheel is divided into 4 groups, and each group groove radius is respectively 0.4mm, 0.3mm, 0.2mm, 0.1mm. The groove radius of the first groove 1 is 0.4mm, and the groove radius of the 2nd groove 2 is 0.3mm, and the groove radius of the 3rd groove 3 is 0.2mm, and the groove radius of the 4th groove 4 is 0.1mm,
Embodiment 2:
The groove number of multiparameter R value chamfering grinding wheel is more than or equal to 4, and the cross section of groove is circular arc, and the radius of circular arc is 0.1mm～0.4mm, and groove radius is divided into more than two, and the radius often organized is inequal. The groove radius of multiparameter R value chamfering grinding wheel is 4 groups, and the close groove radius change in multiparameter R value chamfering grinding wheel position is 0.02mm～0.03mm. Each group groove radius is respectively 0.4mm, 0.38mm, 0.36mm, 0.34mm.
Claims (5)
1. multiparameter R value chamfering grinding wheel, it is characterised in that, the groove number of described multiparameter R value chamfering grinding wheel is more than or equal to 4, the cross section of described groove is circular arc, the radius of described circular arc is 0.1mm～0.4mm, and described groove radius is divided into more than two, and the radius often organized is inequal.
2. multiparameter R value chamfering grinding wheel according to claim 1, it is characterised in that, the groove radius of described multiparameter R value chamfering grinding wheel is divided into 2～4 groups.
3. multiparameter R value chamfering grinding wheel according to claim 2, it is characterised in that, the groove radius of described multiparameter R value chamfering grinding wheel is 4 groups, and each group groove radius is respectively 0.4mm, 0.3mm, 0.2mm, 0.1mm.
4. multiparameter R value chamfering grinding wheel according to claim 1, it is characterised in that, the close groove radius change in described multiparameter R value chamfering grinding wheel position is 0.02mm～0.03mm.
5. multiparameter R value chamfering grinding wheel according to claim 4, it is characterised in that, the groove radius of described multiparameter R value chamfering grinding wheel is 4 groups, and each group groove radius is respectively 0.4mm, 0.38mm, 0.36mm, 0.34mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521054842.1U CN205310084U (en) | 2015-12-16 | 2015-12-16 | Multi -parameter R value chamfer emery wheel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521054842.1U CN205310084U (en) | 2015-12-16 | 2015-12-16 | Multi -parameter R value chamfer emery wheel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205310084U true CN205310084U (en) | 2016-06-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521054842.1U Active CN205310084U (en) | 2015-12-16 | 2015-12-16 | Multi -parameter R value chamfer emery wheel |
Country Status (1)
| Country | Link |
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| CN (1) | CN205310084U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106181790A (en) * | 2016-08-15 | 2016-12-07 | 河南平高电气股份有限公司 | A kind of abrasive grinding wheel and use the rectangular tube fillet former of this abrasive grinding wheel |
-
2015
- 2015-12-16 CN CN201521054842.1U patent/CN205310084U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106181790A (en) * | 2016-08-15 | 2016-12-07 | 河南平高电气股份有限公司 | A kind of abrasive grinding wheel and use the rectangular tube fillet former of this abrasive grinding wheel |
| CN106181790B (en) * | 2016-08-15 | 2018-08-24 | 河南平高电气股份有限公司 | A kind of abrasive grinding wheel and the rectangular tube fillet former using the abrasive grinding wheel |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191224 Address after: 200444 Building 1, No. 181, Shanlian Road, Baoshan District, Shanghai Patentee after: Shanghai xinxinjingyuan Semiconductor Technology Co., Ltd Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181 Patentee before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Address before: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee before: Shanghai xinxinjingyuan Semiconductor Technology Co.,Ltd. |