CN104476686A - Method for cutting solar-grade silicon wafers through ultra-high-density diamond wires - Google Patents
Method for cutting solar-grade silicon wafers through ultra-high-density diamond wires Download PDFInfo
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- CN104476686A CN104476686A CN201410614642.0A CN201410614642A CN104476686A CN 104476686 A CN104476686 A CN 104476686A CN 201410614642 A CN201410614642 A CN 201410614642A CN 104476686 A CN104476686 A CN 104476686A
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- diamond wire
- wire
- ultrahigh
- density diamond
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- 238000005520 cutting process Methods 0.000 title claims abstract description 99
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 69
- 239000010432 diamond Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910021422 solar-grade silicon Inorganic materials 0.000 title claims abstract description 14
- 235000012431 wafers Nutrition 0.000 title abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 230000001133 acceleration Effects 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 229910000831 Steel Inorganic materials 0.000 abstract description 8
- 239000010959 steel Substances 0.000 abstract description 8
- 230000003746 surface roughness Effects 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract 1
- 238000007599 discharging Methods 0.000 description 4
- 238000005336 cracking Methods 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a method for cutting solar-grade silicon wafers through ultra-high-density diamond wires. The method comprises the following steps of (1) fixing sticking bars; (2) mounting the ultra-high-density diamond wires; (3) performing wire cutting; (4) performing cleaning and detection. The method for cutting the solar-grade silicon wafers through the ultra-high-density diamond wires has the advantages that, by cutting the silicon wafers through the ultra-high-density diamond wires, the cutting speed and the cut feeding speed can be both improved, and the problems of serious tipping of feeding surfaces as well as long cutting time can be overcome; after the cut feeding speed is increased, the steel wire cutting efficiency can be enhanced, the cutting time can be saved, and the equipment productivity can be improved; the tipping rate within a length range of 300-500 mu m can be reduced by 50%, and the median of the surface roughness Rz can be reduced below 4.2 mu m.
Description
The technical field is as follows:
the invention relates to a method for cutting a solar-grade silicon wafer, in particular to a method for cutting a solar-grade silicon wafer by using an ultrahigh-density diamond wire.
Background art:
at present, the diamond wire is used for cutting the solar monocrystalline silicon wafer, the density of diamond particles on the diamond wire is 50-70 particles/mm, the cutting speed is 0.6-0.8 mm/min, and the cutting speed is 0.2-0.25 mm/min. In the process of processing a solar-grade silicon wafer, the silicon wafer has the phenomena of surface microscopic damage, edge breakage or notch breakage of an adhesive surface and the like, when the silicon wafer is subjected to external force in the process of turnover transportation, the center of the microscopic damage on the surface of the silicon wafer is prone to hidden cracking, and the corners of the edge breakage notch are prone to hidden cracking and breaking, so that the silicon wafer fragmentation rate is high.
The invention content is as follows:
the invention aims to provide a method for cutting a solar-grade silicon wafer by using an ultrahigh-density diamond wire, which can reduce the occurrence of edge breakage of the silicon wafer and reduce the surface roughness of the silicon wafer.
The invention is implemented by the following technical scheme: a method for cutting a solar grade silicon wafer by using an ultra-high density diamond wire comprises the following steps: (1) fixing the sticky bar; (2) mounting an ultrahigh-density diamond wire; (3) wire cutting; (4) cleaning and detecting; wherein,
(1) fixing a sticky bar: cutting and grinding a silicon single crystal to obtain a silicon rod, adhering the ground silicon rod on a material plate by using resin adhesive for curing, and mounting the silicon rod on online cutting equipment after the silicon rod is firmly adhered to the material plate;
(2) installing the ultra-high density diamond wire: the method comprises the following steps of mounting an ultrahigh-density diamond wire on a multi-wire cutting machine, wherein one end of the ultrahigh-density diamond wire is wound on a travelling wheel with a small groove;
(3) wire cutting: cutting by using the ultrahigh-density diamond wire, and processing the silicon rod into a silicon wafer; the density of diamond particles on the ultrahigh-density diamond wire is 75-85 particles/mm; the cutting speed of the ultra-high density diamond wire is 1-1.2 mm/min, the cutting speed is 0.3-0.6 mm/min, the cutting speed is 0.85-1.1 mm/min, the flow rate of circulating water in the cutting process is 200L-240L/min, and the temperature of the circulating water is controlled to be 20-24 ℃; the walking wheel drives the ultrahigh-density diamond wire to perform reciprocating wiring, the wiring speed is 800 plus 1100 m/min, the amount of the discharged new wire is larger than that of the withdrawn old wire, the supply of the new wire is ensured, and meanwhile, the silicon rod is pressed downwards to be cut to obtain the silicon wafer; the acceleration time of the main shaft is less than 4 seconds, and the pause time is less than 0.3 second;
(4) cleaning and detecting: and after cutting, degumming, cleaning, detecting and packaging the silicon wafer.
Preferably, the cutting speed in the step (3) is 0.9-1.1 mm/min.
The invention has the advantages that the silicon wafer is cut by using the ultra-high density diamond wire, the cutting speed and the tool discharging speed are improved, and the problems of serious edge breakage of the tool discharging surface and longer cutting time are solved; after the cutting speed is increased, the cutting efficiency of the steel wire is increased, the cutting time is reduced, and the productivity of equipment is improved; the ratio of edge chipping reduction is 50% in the range of 300 to 500 μm in length, and the median of surface roughness Rz is reduced to 4.2 μm or less.
The specific implementation mode is as follows:
example 1: a method for cutting a solar grade silicon wafer by using an ultra-high density diamond wire comprises the following steps: (1) fixing the sticky bar; (2) mounting an ultrahigh-density diamond wire; (3) wire cutting; (4) cleaning and detecting; wherein,
(1) fixing a sticky bar: cutting and grinding a silicon single crystal to obtain a silicon rod, adhering the ground silicon rod on a material plate by using resin adhesive for curing, and mounting the silicon rod on online cutting equipment after the silicon rod is firmly adhered to the material plate;
(2) installing the ultra-high density diamond wire: the method comprises the following steps of mounting an ultrahigh-density diamond wire on a multi-wire cutting machine, wherein one end of the ultrahigh-density diamond wire is wound on a travelling wheel with a small groove;
(3) wire cutting: cutting by using the ultrahigh-density diamond wire, and processing the silicon rod into a silicon wafer; the density of diamond particles on the ultrahigh-density diamond wire is 75 particles/mm; the cutting speed of the ultra-high density diamond wire is 1 mm/min, the cutting speed is 0.3 mm/min, the cutting speed is 0.85 mm/min, the flow of circulating water in the cutting process is 200L/min, and the temperature of the circulating water is controlled to be 20 ℃; the walking wheel drives the ultrahigh-density diamond wire to perform reciprocating wiring, the wiring speed is 800 m/min, the amount of the discharged new wire is larger than that of the withdrawn old wire, the supply of the new wire is ensured, and meanwhile, the silicon rod is pressed down to be cut to prepare the silicon wafer; the acceleration time of the main shaft is less than 4 seconds, and the pause time is less than 0.3 second;
(4) cleaning and detecting: and after cutting, degumming, cleaning, detecting and packaging the silicon wafer.
The No. 1 silicon wafer is formed by cutting in the prior art, the cutting steel wire used for cutting is an electroplated diamond wire, the density of diamond particles on the cutting steel wire is 50 particles/mm, the cutting speed is 0.6 mm/min, and the tool-out speed is 0.2 mm/min. Silicon wafer No. 2 was cut by the method of example 1. Table 1 shows the comparison results of two silicon wafers.
TABLE 1 two silicon wafer comparison results
Example 2: a method for cutting a solar grade silicon wafer by using an ultra-high density diamond wire comprises the following steps: (1) fixing the sticky bar; (2) mounting an ultrahigh-density diamond wire; (3) wire cutting; (4) cleaning and detecting; wherein,
(1) fixing a sticky bar: cutting and grinding a silicon single crystal to obtain a silicon rod, adhering the ground silicon rod on a material plate by using resin adhesive for curing, and mounting the silicon rod on online cutting equipment after the silicon rod is firmly adhered to the material plate;
(2) installing the ultra-high density diamond wire: the method comprises the following steps of mounting an ultrahigh-density diamond wire on a multi-wire cutting machine, wherein one end of the ultrahigh-density diamond wire is wound on a travelling wheel with a small groove;
(3) wire cutting: cutting by using the ultrahigh-density diamond wire, and processing the silicon rod into a silicon wafer; the density of diamond particles on the ultrahigh-density diamond wire is 85 particles/mm; the cutting speed of the ultra-high density diamond wire is 1.2 mm/min, the cutting speed is 0.6 mm/min, the cutting speed is 1.1 mm/min, the flow of circulating water in the cutting process is 240 liters/min, and the temperature of the circulating water is controlled at 24 ℃; the walking wheel drives the ultrahigh-density diamond wire to perform reciprocating wiring, the wiring speed is 1100 m/min, the amount of the discharged new wire is larger than that of the withdrawn old wire, the supply of the new wire is ensured, and meanwhile, the silicon rod is pressed down to be cut to prepare the silicon wafer; the acceleration time of the main shaft is less than 4 seconds, and the pause time is less than 0.3 second;
(4) cleaning and detecting: and after cutting, degumming, cleaning, detecting and packaging the silicon wafer.
The No. 1 silicon wafer is formed by cutting in the prior art, the cutting steel wire used for cutting is an electroplated diamond wire, the density of diamond particles on the cutting steel wire is 70 particles/mm, the cutting speed is 0.8mm/min, and the cutter discharging speed is 0.25 mm/min. Silicon wafer No. 2 was cut by the method of example 2. Table 2 shows the comparison results of two silicon wafers.
TABLE 2 two silicon wafer comparison results
Example 3: a method for cutting a solar grade silicon wafer by using an ultra-high density diamond wire comprises the following steps: (1) fixing the sticky bar; (2) mounting an ultrahigh-density diamond wire; (3) wire cutting; (4) cleaning and detecting; wherein,
(1) fixing a sticky bar: cutting and grinding a silicon single crystal to obtain a silicon rod, adhering the ground silicon rod on a material plate by using resin adhesive for curing, and mounting the silicon rod on online cutting equipment after the silicon rod is firmly adhered to the material plate;
(2) installing the ultra-high density diamond wire: the method comprises the following steps of mounting an ultrahigh-density diamond wire on a multi-wire cutting machine, wherein one end of the ultrahigh-density diamond wire is wound on a travelling wheel with a small groove;
(3) wire cutting: cutting by using the ultrahigh-density diamond wire, and processing the silicon rod into a silicon wafer; the density of diamond particles on the ultrahigh-density diamond wire is 80 particles/mm; the cutting speed of the ultra-high density diamond wire is 1.1 mm/min, the cutting speed is 0.4 mm/min, the cutting speed is 1 mm/min, the flow of circulating water in the cutting process is 220 l/min, and the temperature of the circulating water is controlled at 22 ℃; the walking wheel drives the ultrahigh-density diamond wire to perform reciprocating wiring, the wiring speed is 950 m/min, the amount of the discharged new wire is larger than that of the withdrawn old wire, the supply of the new wire is ensured, and meanwhile, the silicon rod is pressed down to be cut to prepare the silicon wafer; the acceleration time of the main shaft is less than 4 seconds, and the pause time is less than 0.3 second;
(4) cleaning and detecting: and after cutting, degumming, cleaning, detecting and packaging the silicon wafer.
The No. 1 silicon wafer is formed by cutting in the prior art, the cutting steel wire used for cutting is an electroplated diamond wire, the density of diamond particles on the cutting steel wire is 60 particles/mm, the cutting speed is 0.7 mm/min, and the tool discharging speed is 0.2 mm/min. Silicon wafer No. 2 was cut by the method of example 3. Table 3 shows the comparison results of the two silicon wafers.
TABLE 3 comparison of two silicon wafers
Claims (2)
1. A method for cutting a solar grade silicon wafer by using an ultrahigh density diamond wire is characterized by comprising the following steps: (1) fixing the sticky bar; (2) mounting an ultrahigh-density diamond wire; (3) wire cutting; (4) cleaning and detecting; wherein,
(1) fixing a sticky bar: cutting and grinding a silicon single crystal to obtain a silicon rod, adhering the ground silicon rod on a material plate by using resin adhesive for curing, and mounting the silicon rod on online cutting equipment after the silicon rod is firmly adhered to the material plate;
(2) installing the ultra-high density diamond wire: the method comprises the following steps of mounting an ultrahigh-density diamond wire on a multi-wire cutting machine, wherein one end of the ultrahigh-density diamond wire is wound on a travelling wheel with a small groove;
(3) wire cutting: cutting by using the ultrahigh-density diamond wire, and processing the silicon rod into a silicon wafer; the density of diamond particles on the ultrahigh-density diamond wire is 75-85 particles/mm; the cutting speed of the ultra-high density diamond wire is 1-1.2 mm/min, the cutting speed is 0.3-0.6 mm/min, the cutting speed is 0.85-1.1 mm/min, the flow rate of circulating water in the cutting process is 200L-240L/min, and the temperature of the circulating water is controlled to be 20-24 ℃; the traveling wheel drives the ultrahigh-density diamond wire to perform reciprocating routing at the routing speed of 800 plus 1100 m/min, and meanwhile, the silicon rod is pressed downwards to be cut to obtain a silicon wafer; the acceleration time of the main shaft is less than 4 seconds, and the pause time is less than 0.3 second;
(4) cleaning and detecting: and after cutting, degumming, cleaning, detecting and packaging the silicon wafer.
2. The method for cutting a solar grade silicon wafer by using an ultra-high density diamond wire according to claim 1, wherein the cutting speed in the step (3) is 0.9-1.1 mm/min.
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| CN104476686B CN104476686B (en) | 2017-01-25 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105459186A (en) * | 2015-12-05 | 2016-04-06 | 嘉兴顺联橡塑机械有限公司 | Honeycomb material cutting method and dedicated device |
| CN107030908A (en) * | 2017-05-15 | 2017-08-11 | 天津市环欧半导体材料技术有限公司 | Fine sanding cutting process for eight-inch semiconductor silicon wafer fine wire |
| CN107116711A (en) * | 2017-05-15 | 2017-09-01 | 南通综艺新材料有限公司 | One kind carries out silicon ingot cutting technique using new steel wire and solvent |
| CN107718333A (en) * | 2017-08-24 | 2018-02-23 | 天津市环欧半导体材料技术有限公司 | A kind of technique of 60um diameters Buddha's warrior attendant wire cutting silicon |
| CN109093867A (en) * | 2018-09-26 | 2018-12-28 | 国家电投集团西安太阳能电力有限公司 | Method for cutting solar monocrystalline silicon rod into thin wires |
| CN114603728A (en) * | 2020-12-03 | 2022-06-10 | 天津市环智新能源技术有限公司 | A kind of solar silicon wafer and its damage layer thickness control method |
| CN115946253A (en) * | 2023-02-23 | 2023-04-11 | 江西兆驰半导体有限公司 | Swinging process for cutting sapphire crystal bar |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101579893A (en) * | 2009-06-30 | 2009-11-18 | 镇江环太硅科技有限公司 | Method and clamp for pretreatment of silicon single crystal bar chips |
| CN102059748A (en) * | 2010-12-13 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Process for cutting silicon chip by using steel wire with diameter of 0.11 millimeter |
| CN102133776A (en) * | 2010-12-31 | 2011-07-27 | 常州天合光能有限公司 | Linear cutting method of polycrystal casting ingot |
| CN102285010A (en) * | 2011-08-08 | 2011-12-21 | 江西金葵能源科技有限公司 | Solar-grade silicon chip cut by using diamond wires and cutting method |
| US20130061535A1 (en) * | 2010-12-30 | 2013-03-14 | Saint-Gobain Abrasifs | Abrasive article and method of forming |
| CN103722625A (en) * | 2013-12-25 | 2014-04-16 | 山东天岳先进材料科技有限公司 | Method and equipment for cutting large-diameter silicon carbide single crystals by aid of diamond wires |
-
2014
- 2014-10-31 CN CN201410614642.0A patent/CN104476686B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101579893A (en) * | 2009-06-30 | 2009-11-18 | 镇江环太硅科技有限公司 | Method and clamp for pretreatment of silicon single crystal bar chips |
| CN102059748A (en) * | 2010-12-13 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Process for cutting silicon chip by using steel wire with diameter of 0.11 millimeter |
| US20130061535A1 (en) * | 2010-12-30 | 2013-03-14 | Saint-Gobain Abrasifs | Abrasive article and method of forming |
| CN102133776A (en) * | 2010-12-31 | 2011-07-27 | 常州天合光能有限公司 | Linear cutting method of polycrystal casting ingot |
| CN102285010A (en) * | 2011-08-08 | 2011-12-21 | 江西金葵能源科技有限公司 | Solar-grade silicon chip cut by using diamond wires and cutting method |
| CN103722625A (en) * | 2013-12-25 | 2014-04-16 | 山东天岳先进材料科技有限公司 | Method and equipment for cutting large-diameter silicon carbide single crystals by aid of diamond wires |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105459186A (en) * | 2015-12-05 | 2016-04-06 | 嘉兴顺联橡塑机械有限公司 | Honeycomb material cutting method and dedicated device |
| CN105459186B (en) * | 2015-12-05 | 2017-11-28 | 浙江顺联智能设备有限公司 | Cellular material cutting method and special equipment |
| CN107030908A (en) * | 2017-05-15 | 2017-08-11 | 天津市环欧半导体材料技术有限公司 | Fine sanding cutting process for eight-inch semiconductor silicon wafer fine wire |
| CN107116711A (en) * | 2017-05-15 | 2017-09-01 | 南通综艺新材料有限公司 | One kind carries out silicon ingot cutting technique using new steel wire and solvent |
| CN107718333A (en) * | 2017-08-24 | 2018-02-23 | 天津市环欧半导体材料技术有限公司 | A kind of technique of 60um diameters Buddha's warrior attendant wire cutting silicon |
| CN109093867A (en) * | 2018-09-26 | 2018-12-28 | 国家电投集团西安太阳能电力有限公司 | Method for cutting solar monocrystalline silicon rod into thin wires |
| CN114603728A (en) * | 2020-12-03 | 2022-06-10 | 天津市环智新能源技术有限公司 | A kind of solar silicon wafer and its damage layer thickness control method |
| CN115946253A (en) * | 2023-02-23 | 2023-04-11 | 江西兆驰半导体有限公司 | Swinging process for cutting sapphire crystal bar |
| CN115946253B (en) * | 2023-02-23 | 2025-06-13 | 江西兆驰半导体有限公司 | A swing process for cutting sapphire crystal rods |
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