CN110497546A - The method and apparatus of free-consolidation abrasive compound multiline cut silicon chips - Google Patents
The method and apparatus of free-consolidation abrasive compound multiline cut silicon chips Download PDFInfo
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- CN110497546A CN110497546A CN201910790559.1A CN201910790559A CN110497546A CN 110497546 A CN110497546 A CN 110497546A CN 201910790559 A CN201910790559 A CN 201910790559A CN 110497546 A CN110497546 A CN 110497546A
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- abrasive
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- wire
- cutting
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/04—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of solid grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The method and apparatus of free-consolidation abrasive compound multiline cut silicon chips, belong to semiconductor material processing technique field, solve the problems, such as that silicon crystal slice exists, the method of free-consolidation abrasive compound multiline cut silicon chips includes to carry out sawing to silicon ingot using the method for concretion abrasive multi-wire saw, while the lapping liquid containing suspension diamond abrasive grain is sprayed onto cutting region；In the joint-cutting that the wire of surface consolidated diamond abrasive grain brings the lapping liquid containing suspension diamond abrasive grain into silicon ingot during wire, form free abrasive grain and fixed grain collective effect, sawing is carried out to silicon ingot jointly, silicon ingot is cut into several pieces during time processing；The equipment of free-consolidation abrasive compound multiline cut silicon chips includes free abrasive multi-wire saw equipment, in whole wire surface consolidated diamond abrasive grains of free abrasive multi-wire saw equipment；The present invention is for cutting silicon wafer.
Description
Technical field
The invention belongs to semiconductor material processing technique fields, and in particular to free-consolidation abrasive compound multi-wire saw silicon
The method and apparatus of piece.
Background technique
Semiconductor processing technology based on silicon materials is the new and high technologies such as integrated circuit, electronic information and photovoltaic
The key technology condition of industry development.Silicon crystal slice is the front end process of semiconductor processing industry chain, and working ability is direct
Determine the performance quality of follow-up process and end product.In order to which the performance and economic benefit of end product is continuously improved, it is desirable that silicon
Crystal cut processing technology develops to major diameter, small thickness, high quality, high production capacity, high efficiency and low consumed direction.It is processing
On diameter of silicon crystal 300mm or more, and 120 μm of joint-cutting of slice and magnitude below, current extensive use free abrasive is multi-thread
Cutting technique and diamond concretion abrasive multi-wire cutting technology.
Free abrasive multi-wire cutting technology is to apply sawing power using multiple tracks parallel wire, is suspended in lapping liquid
Abrasive grain as cutting tools, slice processing is carried out to silicon ingot.
Diamond concretion abrasive multi-wire cutting technology is to utilize the parallel of multiple tracks surface consolidated diamond or silicon carbide abrasive particles
Wire directly carries out sawing to silicon ingot, while cooling using coolant liquid.
It for free abrasive multi-wire cutting technology, is suspended in lapping liquid because abrasive grain is free, effectively cutting contact interface
Very little causes clipping time long, and cutting efficiency is relatively low；By the saw size of silk diameter, tensile force size, lapping liquid density and
The silicon chip surface roughness of the influence of the factors such as viscosity, free abrasive cutting is big；Use 120 μm of diameter thinner saw silk cuttings
Die size deviation is often higher than the saw silk using 140 μm of diameter；Free abrasive cuts silicon ingot with brittle mode, processing
Silicon crystal slice surface is isotropic pattern；And is made joint-cutting entrance, centre by the bullet stream effects of lapping liquid and cut
Seam outlet grinding degree is irregular, causes silicon crystal slice different location quality different, angularity, curvature and the TTV of silicon wafer
Equal face shape errors change greatly；These problems limit the application and development of free abrasive wire saw cutting.
For concretion abrasive multi-wire cutting technology, abrasive grain and the direct rigid contact of silicon ingot, although cutting efficiency increases, and
And with the increase of saw silk abrasion, better plastic removal effect is shown, face crack is less, but face crack is deeper,
The average fracture strength of chip is lower, and saws the lost of life of silk；In addition, concretion abrasive cutting silicon wafer is crisp-plasticity mixing
Easily there is obvious cut mark parallel, the depth is irregular in mode cutting, silicon crystal slice surface；Concretion abrasive sawing silicon wafers elasticity modulus
It is stronger in the direction for being parallel to stria, it is weaker perpendicular to the direction of stria；The silicon wafer of diamond concretion abrasive multi-wire saw sawing
The silicon wafer of specific ionization abrasive material cutting has unacceptable high breakage rate；Concretion abrasive cuts silicon crystal slice along vertical cutting line side
To Critical fracture performance be free abrasive cutting silicon crystal be sliced 57%, cause concretion abrasive cutting silicon wafer extreme fragile
Concrete reason is now also indefinite；Due to these essential drawbacks, concretion abrasive multi-wire cutting technology can not replace trip completely
From w ire s aws h cutting processing.
On the whole, for Multi-wire wafer cutting technique always to workpieces processing size is increased, slice is thin, improves Si wafer quality
Direction is developed.Main target to silicon wafer industry is by reducing total thickness variations and surface defect, to improve the table of silicon wafer
Face quality, and productivity is improved by reducing wafer thickness.Silicon ingot is bigger, and grooving is thinner, and that saws silk and silicon ingot fritters seam
It lengthens and deepens, lapping liquid is more uneven or even stops, and will seriously affect giving full play to for lapping liquid effect.Semi-conductor silicon chip
The growth requirement of industry more brings bigger difficulty to manufacturing technology, and the diameter of silicon wafer is gradually increased, and thickness constantly reduces, at present
Processing method be not able to satisfy the demand for development of silicon wafer.
Summary of the invention
The purpose of the present invention is to solve silicon crystal to be sliced the existing above problem, and it is multiple to provide a kind of free-consolidation
The method and apparatus of abrasive material multiline cut silicon chips is closed, its technical solution is as follows:
The method of free-consolidation abrasive compound multiline cut silicon chips, it includes the method using concretion abrasive multi-wire saw to silicon
Crystal ingot carries out sawing, while the lapping liquid containing suspension diamond abrasive grain is sprayed onto cutting region；Surface consolidated diamond mill
In the joint-cutting that the wire of grain brings the lapping liquid containing suspension diamond abrasive grain into silicon ingot during wire, formed free
Abrasive grain and fixed grain collective effect carry out sawing to silicon ingot jointly, silicon ingot are cut into number during time processing
Piece.
The equipment of free-consolidation abrasive compound multiline cut silicon chips, it includes free abrasive multi-wire saw equipment, free
Whole wire surface consolidated diamond abrasive grains of abrasive material multi-wire saw equipment.
The invention has the benefit that the present invention merges the advantages of free-two kinds of abrasive grain grindings of consolidation, mutually make up
Respective deficiency；Under the influence of lapping liquid flowing pressure field, velocity field, substantially the free abrasive grain of disordered motion presents certain
The characteristics of motion；The enbrittle property of material, free abrasive grain and fixed grain of silicon ingot carries out double rub coupling to silicon ingot
Grinding is closed, the contact area of diamond abrasive grain and silicon ingot, the effective cutting performance of enhancing macroscopic view are increased；In process, dissociate
With consolidation diamond abrasive grain to the difference of the contact form of silicon ingot, it is caused to hit the difference of mode and number with silicon ingot.
Reducing cutting depth is that fragile material improves ductile regime machining, reduces the processing of brittleness domain, to submit fragile material processing quality
Key method.Internal energy storage and release summation and the period be diamond abrasive grain grinding silicon wafer material cutting depth at
Cause.Fixed grain to the uniform force of silicon ingot and direction it is single, the utilization rate of grinding is higher, the fluid property of sticky lapping liquid
Reducing fixed grain enhances microplasticity cutting performance to the parallel cutting crackle of silicon ingot, and increases breaking protection, thus more
It is easy effectively to be cut；The coupling shear action of two kinds of abrasive grains is complementary, and more evenly, saw silk removes material to abrasive grain distribution density
Rate increases, and improves cutting power.It reduces free abrasive grain to cut silicon ingot brittleness, increases fixed grain to the plasticity of silicon ingot
Cutting reduces wafer surface crackle, and machining accuracy significantly improves, and surface quality is more preferable, and the breakage rate of silicon wafer reduces；
The present invention is opposite, and the advantage with existing processing method is: being distributed than the abrasive grain of traditional free abrasive silicon slice processing more equal
Even, it is big to be effectively reduced grooving inlet abrasive grain density, and friction is serious, and silicon sheet material each position processes non-uniform situation；Than passing
The contact area that binding material between silk and workpiece and abrasive material is sawed in concretion abrasive silicon slice processing of uniting increases.Since viscosity is ground
The effect of grinding fluid can make to saw the decline of silk contact pressure, anti-to stop loss disconnected, the service life of increase saw silk；Since machining accuracy significantly improves,
It, can silicon wafer with cutting diameter 300mm or more, within 120 μm of thickness so working ability increases；Pass through the matching of grinding parameter
With setting, the controllability of diced system is obtained, even more silicon wafer diced system stablizes the basic guarantee processed.
Specifically, the free abrasive grain in the slurry and abrasive grain that consolidates is jointly right respectively and under coupling on saw silk
The effects of silicon wafer impact, breakage, indentation, rolling cut.The track of free abrasive grain more order increases effective cutting force, improves material
Cut effect.From there through the effect of lapping liquid, mixes in cutting, increase with plasticity in the brittleness that fixed grain carries out silicon crystal
The microcosmic processing ingredient of big plastic region.
Crack of silicon chip damage is closely related with surface quality in crystal silicon material slice processing, joint-cutting bottom and joint-cutting side
The difference of sub-surface crackle form and distribution, silicon wafer surface degree of injury is variant at two.Cut the sub-surface damage of trench bottom
Hurt that crack distribution is intensive, and the sub-surface crack distribution for cutting seam side is seldom.Diamond abrasive grain on scroll saw to silicon crystal into
Row squeezes and swiping, and crystal is got rid of in a brittle manner.In actually cutting, joint-cutting bottom bottom position material removes thickness most
The removal thickness of height, joint-cutting boundary material is minimum, and the removal of this position brittleness domain material can be changed into the removal of plastic region material.It cuts
Seam bottom is the crackle generated by the brittle removal of material, and cutting seam side material is largely plastic material removing method.
The big crackle of some lateral length is remained in cutting seam side, and micro-vibration inside diced system, causes crystalline substance in addition
The secondary removal of body side surface forms new crackle on joint-cutting surface, and original crack is extended, and reduces joint-cutting side plastic region
The ratio of material removal.Slurry fluid behavior makes the miniature edge of silicon chip surface caused by fixed grain perpendicular to the cutting of cut direction
Line is reduced.In the cutting of concretion abrasive silicon wafer, the abrasive grain of saw silk side makes crystalline silicon form parallel strip and the deep mixed period
Distribution cutting line, this is mainly that there are tension and pressure for concretion abrasive cutting silicon chip surface stress, so that its breaking strength is low.
Lapping liquid slurry forms protective effect to this phenomenon and reduces the crackle of silicon chip surface by the substitution effect of free abrasive.
Silicon wafer is free-and consolidation abrasive compound multi-wire saw processing technology belongs to Compound Machining, macroscopical cutting can be effectively reduced
Power reduces broaching load.The stria of silicon chip surface, peeling and damaging layer and residual stress make moderate progress in this method.Pass through
Cutting fluid ingredient is improved, the effect of tool carrier in cutting process is improved.Technological parameter is advanced optimized, raising silicon wafer is obtained and adds
The best effort range of working medium amount improves working ability and product quality, reduces cost.
Detailed description of the invention:
Fig. 1 is the principle of the present invention schematic diagram.
Specific embodiment:
Referring to Fig.1, the method for free-consolidation abrasive compound multiline cut silicon chips, it includes using concretion abrasive multi-wire saw
Method carries out sawing to silicon ingot 3, while the lapping liquid 2 containing suspension diamond abrasive grain is sprayed onto cutting region；Surface is solid
The wire 1 of knot diamond abrasive grain brings the lapping liquid 2 containing suspension diamond abrasive grain into silicon ingot 3 cut during wire
In seam, free abrasive grain and fixed grain collective effect are formed, sawing is carried out to silicon ingot 3 jointly, it will during time processing
Silicon ingot 3 is cut into several pieces.
The equipment of free-consolidation abrasive compound multiline cut silicon chips, it includes free abrasive multi-wire saw equipment, free
The 1 surface consolidated diamond abrasive grain of whole wires of abrasive material multi-wire saw equipment.
The method of free-consolidation abrasive compound multiline cut silicon chips, used steel wire diameter is between 50 to 250 μm；
The average grain diameter for being fixedly arranged at the diamond abrasive grain on steel wire is between 5 to 30 μm；It is fixedly arranged between the diamond abrasive grain on steel wire
Away from one times or so for its average grain diameter, adjusted by the parameter plated or welded；Be limited to slice surface material removing speed with
And the influence of cutting output caused by abrasive grain size itself, the wire travelling speed for sawing silk is 20m/s or so；It is used to contain the gold that suspends
The lapping liquid 2 of hard rock abrasive grain, be by average grain diameter be 5 to 30 μm diamond abrasive grain and polyethylene glycol liquid according to quality
Concentration proportioning mixing than 20% to 30%, stirring environment temperature is greater than 20 DEG C, less than 40 DEG C, stirs 1 to 2 hour, stirring stops 5
Slurry does not have lamination in minute, forms homogeneous mixed liquor, is the diamond abrasive grain suspension of sticky polyethylene glycol.
Claims (3)
1. the method for free-consolidation abrasive compound multiline cut silicon chips, it is characterised in that it includes to use concretion abrasive multi-wire cutting
The method cut carries out sawing to silicon ingot (3), while the lapping liquid (2) containing suspension diamond abrasive grain is sprayed onto cutting area
Domain.
2. the method for free-consolidation abrasive compound multiline cut silicon chips as described in claim 1, it is characterised in that used
Steel wire diameter is between 50 to 250 μm；The average grain diameter for being fixedly arranged at the diamond abrasive grain on steel wire is between 5 to 30 μm；Consolidation
The spacing of diamond abrasive grain on steel wire is one times of its average grain diameter；The wire travelling speed for sawing silk is 20m/s；It is used to contain
There is the lapping liquid (2) of suspension diamond abrasive grain, is the diamond abrasive grain and polyethylene glycol liquid for being 5 to 30 μm by average grain diameter
Body is mixed according to the concentration proportioning of mass ratio 20% to 30%, and stirring environment temperature is greater than 20 DEG C, less than 40 DEG C, is stirred 1 to 2 hour
It is made.
3. the equipment of free-consolidation abrasive compound multiline cut silicon chips, it includes free abrasive multi-wire saw equipment, and feature exists
In whole wires (1) surface consolidated diamond abrasive grain in free abrasive multi-wire saw equipment.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910790559.1A CN110497546A (en) | 2019-08-26 | 2019-08-26 | The method and apparatus of free-consolidation abrasive compound multiline cut silicon chips |
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| CN201910790559.1A CN110497546A (en) | 2019-08-26 | 2019-08-26 | The method and apparatus of free-consolidation abrasive compound multiline cut silicon chips |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111976043A (en) * | 2020-08-26 | 2020-11-24 | 西安奕斯伟硅片技术有限公司 | Crystal bar cutting device and crystal bar cutting method |
| CN112372862A (en) * | 2020-11-12 | 2021-02-19 | 上海新昇半导体科技有限公司 | Crystal bar workpiece plate and crystal bar cutting method |
| CN114670350A (en) * | 2022-04-08 | 2022-06-28 | 浙江工业大学 | Semiconductor monocrystalline silicon diamond wire saw cutting method based on phase change microcapsule suspension |
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| US20100126488A1 (en) * | 2008-11-25 | 2010-05-27 | Abhaya Kumar Bakshi | Method and apparatus for cutting wafers by wire sawing |
| CN103025486A (en) * | 2010-08-03 | 2013-04-03 | 尤希路化学工业有限公司 | Aqueous processing solution for fixed abresive grain wire saw |
| CN103121245A (en) * | 2011-11-17 | 2013-05-29 | 赵钧永 | Consolidation grinding material wire-electrode cutting method and cutting fluid |
| CN103786274A (en) * | 2014-01-23 | 2014-05-14 | 中国有色桂林矿产地质研究院有限公司 | Diamond fretsaw device for polycrystalline silicon ingot squaring |
| CN206568356U (en) * | 2016-10-21 | 2017-10-20 | 苏州伟益新材料科技有限公司 | Three stranded diamond fretsaws |
| CN108437244A (en) * | 2018-03-22 | 2018-08-24 | 山东大学 | Free-fixed grain composite fret saw cutting method of photovoltaic polycrystalline silicon battery plate |
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2019
- 2019-08-26 CN CN201910790559.1A patent/CN110497546A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20100126488A1 (en) * | 2008-11-25 | 2010-05-27 | Abhaya Kumar Bakshi | Method and apparatus for cutting wafers by wire sawing |
| CN103025486A (en) * | 2010-08-03 | 2013-04-03 | 尤希路化学工业有限公司 | Aqueous processing solution for fixed abresive grain wire saw |
| CN103121245A (en) * | 2011-11-17 | 2013-05-29 | 赵钧永 | Consolidation grinding material wire-electrode cutting method and cutting fluid |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111976043A (en) * | 2020-08-26 | 2020-11-24 | 西安奕斯伟硅片技术有限公司 | Crystal bar cutting device and crystal bar cutting method |
| CN112372862A (en) * | 2020-11-12 | 2021-02-19 | 上海新昇半导体科技有限公司 | Crystal bar workpiece plate and crystal bar cutting method |
| CN114670350A (en) * | 2022-04-08 | 2022-06-28 | 浙江工业大学 | Semiconductor monocrystalline silicon diamond wire saw cutting method based on phase change microcapsule suspension |
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