CN106079126A - A kind of single crystal silicon semiconductor multi-wire saw clamping device and method - Google Patents
A kind of single crystal silicon semiconductor multi-wire saw clamping device and method Download PDFInfo
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- CN106079126A CN106079126A CN201610729215.6A CN201610729215A CN106079126A CN 106079126 A CN106079126 A CN 106079126A CN 201610729215 A CN201610729215 A CN 201610729215A CN 106079126 A CN106079126 A CN 106079126A
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- Prior art keywords
- clamping plate
- single crystal
- silicon
- cutting
- wire saw
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention discloses a kind of single crystal silicon semiconductor multi-wire saw clamping device, including one group of clamping plate, each clamping plate being provided with the groove of arc, groove surfaces is provided with bonded adhesives, also by bonded adhesives jockey on arbitrary clamping plate, fixture is located remotely from one end of clamping plate upper groove.The present invention changes cut silicon single crystal rod profile by using clamping plate, when changing mortar impact conditions and cutting, mortar is in the diversity of side coherent condition simultaneously, when reaching cutting, the purpose of each position cut state equivalence on vertical direction, can effectively reduce slice thickness deviation, solve the problem that silicon wafer thickness is uneven, have good using value.
Description
Technical field
The invention belongs to single crystal silicon semiconductor technical field, be specifically related to a kind of single crystal silicon semiconductor multi-wire saw clamping dress
Put, the invention still further relates to a kind of single crystal silicon semiconductor multi-line cutting method.
Background technology
Quasiconductor dissociate mortar multi-wire saw be in recent years single crystal silicon semiconductor cutting major way, the most substantially substitute
Original inner circle cutting mode, it is low that semiconductor monocrystal multi-line cutting method overcomes production efficiency, damages monocrystalline silicon piece thickness
Many shortcomings, its cardinal principle is that several steering-effectings cunnings walked around by the coppered steel wire pulled out by the actinobacillus wheel of servomotor
Wheel, then passes around tension controller, and in cutting bin, continuous winding is on several capstans, is formed on one horizontal plane densely covered
Parallel nets；Above gauze, the both sides of monocrystalline are disposed with the mortar flow that mortar sprinkling irrigation provides stable；By by silicon rod with
One band radian resin plate according to certain lattice direction bonding after be fixed on a platform, install to workbench in cutting bin, cutting
Time high-speed motion steel wire carry the SiC abrasive material being attached on steel wire silicon rod be ground, thus reach the effect of cutting, and
The silicon rod to be processed down or up supply realizing workpiece by workbench, silicon rod by certain lattice direction dicing.
Section is one of most important operation in silicon crystal bar processing technique, needs to ensure it in the cutting of IC level silicon crystal bar
Tolerance and the surface quality such as crystalline phase irrelevance, thickness, total thickness variations (TTV), flexibility (BOW), angularity (warp).
Monocrystalline silicon piece used by quasiconductor requires that total thickness variations is little, reduces the surface thickness removal amount grinding link.Currently used
Semiconductor monocrystal multi-wire saw, because silicon rod is circular, in cutting process, inlet wire direction both side surface is curved, is cut to not coordination
Put mortar and assemble situation difference in side, and then the amount by steel wire brought into cutting zone SiC abrasive material is the most different, the most not same order
The cutting force that section is shown is different；And along with the change of single crystal diameter, the area of steel wire contact monocrystalline in cutting process
To change from small to big and diminish, the silicon chip finally cut out presents such a form: i.e. at silicon chip vertical direction, silicon wafer thickness
Also by thin thickening the most thinning, on vertical direction, middle part thickness is higher than two ends, ultimately results in vertical direction section TTV excessive,
Technological requirement cannot be met.
Summary of the invention
It is an object of the invention to provide a kind of single crystal silicon semiconductor multi-wire saw clamping device, solve existing quasiconductor
After monocrystalline multi-wire saw, the problem that silicon wafer thickness is uneven.
The present invention also aims to provide a kind of single crystal silicon semiconductor multi-line cutting method.
One single crystal silicon semiconductor multi-wire saw clamping device of the present invention be employed technical scheme comprise that, including one group of folder
Plate, each clamping plate are provided with the groove of arc, and groove surfaces is provided with bonded adhesives, also by bonded adhesives on arbitrary clamping plate
Jockey, fixture is located remotely from one end of clamping plate upper groove.
The feature of the present invention also resides in,
Clamping plate are resinic splint or graphite clamping plate.
Bonded adhesives is epoxide resin AB glue.
Of the present invention another solution is that a kind of single crystal silicon semiconductor multi-line cutting method, including following
Step:
Step one, cleans silicon single crystal rod surface；
Step 2, monocrystal silicon step one processed measures crystal orientation, carries out bonding mark according to assigned direction；
Step 3, by bonded adhesives by silicon single crystal rod and groove bonding, solidifies to abutting edge；
Step 4, by mutually bonding with fixture for arbitrary clamping plate, installs to cutting bin inner platform；
Step 5, in machine, steel wire starts silicon chip cutting；
Step 6, is carried out the silicon chip of step 5 cutting, removes bonded adhesives.
The invention has the beneficial effects as follows: the present invention, by using clamping plate to change cut silicon single crystal rod profile, changes simultaneously
When mortar impact conditions and cutting, mortar is in the diversity of side coherent condition, when reaching cutting, each position on vertical direction
The purpose of cut state equivalence, it is possible to effectively reduce slice thickness deviation, solve the problem that silicon wafer thickness is uneven, well should have
By value.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention a kind of single crystal silicon semiconductor multi-wire saw clamping device；
Fig. 2 is a kind of structural representation of the present invention a kind of single crystal silicon semiconductor multi-wire saw clamping device；
Fig. 3 is the another kind of structural representation of the present invention a kind of single crystal silicon semiconductor multi-wire saw clamping device.
In figure, 1. clamping plate, 2. groove, 3. fixture, 4. bonded adhesives.
Detailed description of the invention
The present invention is described in detail with detailed description of the invention below in conjunction with the accompanying drawings.
One single crystal silicon semiconductor multi-wire saw clamping device of the present invention, including one group of clamping plate 1, each clamping plate 1 is all provided with
Being equipped with the groove 2 of arc, groove 2 surface is provided with bonded adhesives 4, also by bonded adhesives 4 jockey 3 on arbitrary clamping plate 1, and folder
Tool 3 is located remotely from one end of clamping plate 1 upper groove 2；Clamping plate 1 are resinic splint or graphite clamping plate；Bonded adhesives 4 is epoxide resin AB
Glue；Its cutting method is as follows:
Step one, cleans silicon single crystal rod surface；
Step 2, monocrystal silicon step one processed measures crystal orientation, carries out bonding mark according to assigned direction；
Step 3, by bonded adhesives 4, silicon single crystal rod is bonding with groove 2, solidify to abutting edge；
Step 4, by mutually bonding with fixture 3 for arbitrary clamping plate 1, installs to cutting bin inner platform；
Step 5, in machine, steel wire starts silicon chip cutting；
Step 6, is carried out the silicon chip of step 5 cutting, removes bonded adhesives 4.
Embodiment 1
4 inches of<111>crystal bars of processing N-type, have main reference plane, slice thickness 580 microns, asymmetric chamfering, are used for saving
Can make by lamp pliotron core substrate, according to conventional multiline cutting processing, total thickness variations is 14.3 microns.As it is shown in figure 1,
Employing the inventive method is processed, and step is as follows:
According to Production requirement, correspondence crystal bar is carried out surface barrel finishing, clean the use to be cut of silicon single crystal rod surface；
Crystal orientation instrument carries out crystal orientation test, and carries out labelling, use the clamping plate 1 of two resin materials, silicon rod is placed
In groove 2 inside clamping plate 1, the circular arc arc length of clamping plate 1 inboard groove 2 is 4 inches, and clamping plate 1 width is 110mm,
Using the adhesive glue 4 for epoxide resin AB glue is by bonding with silicon rod for groove 2, places 10～20min to solidification；
Arbitrary clamping plate 1 side is fixed on multi-wire saw jockey by adhesive glue 4, and stands 2 hours, will bonding
Good silicon rod and resin plate are arranged to cutting bin platform together with multi-wire saw fixture and are processed；
After slice processing is good, crystal bar, clamping plate 1 are removed in multi-wire saw machining storehouse together with multi-wire saw fixture 3, and
Carry out spray irrigation, separate specifically, the crystal bar rinsed is put into 70 degrees Celsius of hot water degummings together with fixture.
Silicon chip after separator well is carried out horse inserted sheet and carries out multiple-grooved ultrasonic cleaning and dry；Cleaned silicon chip is entered
Row machined parameters is tested, and total thickness variations is 5.6 microns, changes 14.3 microns less than the thickness before not using grip device.
Embodiment 2
6 inches of<111>crystal bars of processing N-type, have main reference plane, slice thickness 340 microns, and symmetrical chamfering, for bridge heap
Diode core substrate makes, and according to conventional multiline cutting processing, total thickness variations is 18.1 microns.As in figure 2 it is shown, use this
Bright method is processed, and step is as follows:
According to Production requirement, correspondence crystal bar is carried out surface barrel finishing, clean the use to be cut of silicon single crystal rod surface；
Crystal orientation instrument carries out crystal orientation test, and carries out labelling, use the clamping plate 1 of two resin materials, silicon rod is placed
In groove 2 inside clamping plate 1, the circular arc arc length of clamping plate 1 inboard groove 2 is 6 inches, and clamping plate 1 width is 156mm,
Using the adhesive glue 4 for epoxide resin AB glue is by bonding with silicon rod for groove 2, places 10～20min to solidification；
Arbitrary clamping plate 1 side is fixed on multi-wire saw jockey by adhesive glue 4, and stands 2 hours, will bonding
Good silicon rod and resin plate are arranged to cutting bin platform together with multi-wire saw fixture and are processed；
After slice processing is good, crystal bar, clamping plate 1 are removed in multi-wire saw machining storehouse together with multi-wire saw fixture 3, and
Carry out spray irrigation, separate specifically, the crystal bar rinsed is put into 70 degrees Celsius of hot water degummings together with fixture.
Silicon chip after separator well is carried out horse inserted sheet and carries out multiple-grooved ultrasonic cleaning and dry；Cleaned silicon chip is entered
Row machined parameters is tested, and total thickness variations is 7.3 microns, changes 18.1 microns less than the thickness before not using grip device.
Embodiment 3
5 inches of<111>crystal bars of processing N-type, have main reference plane, slice thickness 400 microns, and symmetrical chamfering, for TVS bis-
Pole tube core substrate makes, and according to conventional multiline cutting processing, total thickness variations is 15.5 microns.As it is shown on figure 3, the employing present invention
Method is processed, and step is as follows:
According to Production requirement, correspondence crystal bar is carried out surface barrel finishing, clean the use to be cut of silicon single crystal rod surface；
Crystal orientation instrument carries out crystal orientation test, and carries out labelling, use the clamping plate 1 of two resin materials, silicon rod is placed
In groove 2 inside clamping plate 1, the circular arc arc length of clamping plate 1 inboard groove 2 is 5 inches, and clamping plate 1 width is 100mm,
Using the adhesive glue 4 for epoxide resin AB glue is by bonding with silicon rod for groove 2, places 10～20min to solidification；
Arbitrary clamping plate 1 side is fixed on multi-wire saw jockey by adhesive glue 4, and stands 2 hours, will bonding
Good silicon rod and resin plate are arranged to cutting bin platform together with multi-wire saw fixture and are processed；
After slice processing is good, crystal bar, clamping plate 1 are removed in multi-wire saw machining storehouse together with multi-wire saw fixture 3, and
Carry out spray irrigation, separate specifically, the crystal bar rinsed is put into 70 degrees Celsius of hot water degummings together with fixture.
Silicon chip after separator well is carried out horse inserted sheet and carries out multiple-grooved ultrasonic cleaning and dry；Cleaned silicon chip is entered
Row machined parameters is tested, and total thickness variations is 6.2 microns, changes 15.5 microns less than the thickness before not using grip device.
The present invention, by using clamping plate 1 to change cut silicon single crystal rod profile, changes mortar impact conditions simultaneously and cuts
When cutting, mortar is in the diversity of side coherent condition, when reaching cutting, and the purpose of each position cut state equivalence on vertical direction,
Can effectively reduce slice thickness deviation, solve the problem that silicon wafer thickness is uneven, have good using value.
Claims (4)
1. a single crystal silicon semiconductor multi-wire saw clamping device, it is characterised in that include one group of clamping plate (1), each clamping plate (1)
On be provided with the groove (2) of arc, groove (2) surface is provided with bonded adhesives (4), the most logical on arbitrary described clamping plate (1)
Crossing bonded adhesives (4) jockey (3), fixture (3) is located remotely from one end of clamping plate (1) upper groove (2).
A kind of single crystal silicon semiconductor multi-wire saw clamping device the most according to claim 1, it is characterised in that described folder
Plate (1) is resinic splint or graphite clamping plate.
A kind of single crystal silicon semiconductor multi-wire saw clamping device the most according to claim 1, it is characterised in that described is viscous
Connecing glue (4) is epoxide resin AB glue.
4. a single crystal silicon semiconductor multi-line cutting method, it is characterised in that comprise the following steps:
Step one, cleans silicon single crystal rod surface；
Step 2, monocrystal silicon step one processed measures crystal orientation, carries out bonding mark according to assigned direction；
Step 3, by bonded adhesives (4), silicon single crystal rod is bonding with groove (2), solidify to abutting edge；
Step 4, arbitrary clamping plate (1) are mutually bonding with fixture (3), install to cutting bin inner platform；
Step 5, in machine, steel wire starts silicon chip cutting；
Step 6, is carried out the silicon chip of step 5 cutting, removing bonded adhesives (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610729215.6A CN106079126A (en) | 2016-08-25 | 2016-08-25 | A kind of single crystal silicon semiconductor multi-wire saw clamping device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610729215.6A CN106079126A (en) | 2016-08-25 | 2016-08-25 | A kind of single crystal silicon semiconductor multi-wire saw clamping device and method |
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| CN106079126A true CN106079126A (en) | 2016-11-09 |
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| CN201610729215.6A Pending CN106079126A (en) | 2016-08-25 | 2016-08-25 | A kind of single crystal silicon semiconductor multi-wire saw clamping device and method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106003442A (en) * | 2016-07-25 | 2016-10-12 | 宜昌南玻硅材料有限公司 | Sticking structure and method used for cutting a zone-melting detecting silicon rod |
| CN109795041A (en) * | 2019-01-25 | 2019-05-24 | 扬州美和光电科技有限公司 | A kind of quartz pushrod cutting technique |
| CN109849205A (en) * | 2018-12-28 | 2019-06-07 | 山西潞安太阳能科技有限责任公司 | MBS1000C polycrystalline G6 transformation apparatus |
| CN111036991A (en) * | 2019-12-26 | 2020-04-21 | 陕西宝成航空仪表有限责任公司 | Machining method of sheet-shaped magnetic steel parts |
| CN112008902A (en) * | 2019-05-29 | 2020-12-01 | 信越半导体株式会社 | Method for cutting ingot |
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| US20070190912A1 (en) * | 2004-11-23 | 2007-08-16 | Eunsang Ji | Apparatus and method for slicing an ingot |
| CN103448153A (en) * | 2013-08-23 | 2013-12-18 | 蓝思科技股份有限公司 | Cutting technique and machining fixture for sapphire ingot |
| CN204136258U (en) * | 2014-04-17 | 2015-02-04 | 广东先导半导体材料有限公司 | A kind of cutting machine jig |
| CN205238333U (en) * | 2015-12-28 | 2016-05-18 | 浙江好亚能源股份有限公司 | Cutting device of silicon wafer |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070190912A1 (en) * | 2004-11-23 | 2007-08-16 | Eunsang Ji | Apparatus and method for slicing an ingot |
| CN103448153A (en) * | 2013-08-23 | 2013-12-18 | 蓝思科技股份有限公司 | Cutting technique and machining fixture for sapphire ingot |
| CN204136258U (en) * | 2014-04-17 | 2015-02-04 | 广东先导半导体材料有限公司 | A kind of cutting machine jig |
| CN205238333U (en) * | 2015-12-28 | 2016-05-18 | 浙江好亚能源股份有限公司 | Cutting device of silicon wafer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106003442A (en) * | 2016-07-25 | 2016-10-12 | 宜昌南玻硅材料有限公司 | Sticking structure and method used for cutting a zone-melting detecting silicon rod |
| CN109849205A (en) * | 2018-12-28 | 2019-06-07 | 山西潞安太阳能科技有限责任公司 | MBS1000C polycrystalline G6 transformation apparatus |
| CN109795041A (en) * | 2019-01-25 | 2019-05-24 | 扬州美和光电科技有限公司 | A kind of quartz pushrod cutting technique |
| CN112008902A (en) * | 2019-05-29 | 2020-12-01 | 信越半导体株式会社 | Method for cutting ingot |
| CN111036991A (en) * | 2019-12-26 | 2020-04-21 | 陕西宝成航空仪表有限责任公司 | Machining method of sheet-shaped magnetic steel parts |
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Application publication date: 20161109 |