CN103240805B - Cut equipment and the method for multiple section from workpiece simultaneously - Google Patents
Cut equipment and the method for multiple section from workpiece simultaneously Download PDFInfo
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- CN103240805B CN103240805B CN201310049533.4A CN201310049533A CN103240805B CN 103240805 B CN103240805 B CN 103240805B CN 201310049533 A CN201310049533 A CN 201310049533A CN 103240805 B CN103240805 B CN 103240805B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
Abstract
Cut equipment and the method for multiple section from workpiece simultaneously.The method comprises the mode holding workpiece of the axle of the sawline guide roller being parallel to scroll saw by the feed arrangement of scroll saw with the axle of workpiece; Utilize feed arrangement that workpiece is moved in the mode of the row's grid vertically from top by scroll saw, form row's grid by multiple parallel to each other and sawline section that is that run in a plane; The slurry of hard object matter in carrier fluid is supplied to sawline section as abrasive material, simultaneously sawline section implements relative motion by when being rotated in and continuously changing direction of rotation of sawline guide roller relative to workpiece, and it guides sawline section from approaching side until workpiece is passed through in receding side; Cooling agent is ejected into from the side and from below in the cutting gap formed when workpiece movable is by arranging grid, wherein by being arranged in below row's grid the nozzle parallel with the axle of sawline guide roller by refrigerant injection to cutting gap, by means of only the relative nozzle in the approaching side position with sawline section by refrigerant injection in cutting gap.
Description
Technical field
The present invention relates to for from the equipment of the multiple section of work piece cut and method, especially utilize the line lappingout patterning method wherein converting sawline traffic direction from crystal-cut semiconductor wafer.
Background technology
Semiconductor wafer is by semi-conducting material such as elemental semiconductor (silicon, germanium), compound semiconductor (such as by periodic table III major element as aluminium, gallium or indium and periodic table V major element such as nitrogen, phosphorus or arsenic form) or its compound (such as Si
1-xge
x, 0<x<1) and the section that forms.It is required especially as the base material of electronic component, and must meet high request in flatness, cleannes and defect shortage degree.
For other application, require the planar slice be made up of other materials, such as, as the glass slice of the base material for the manufacture of memory disk or the section be made up of sapphire as the substrate for the manufacture of photoelectric cell.
The section that should be made up of semi-conducting material or other materials cuts into from the bar be made up of various material.In order to cut section, especially consider the processing method removing chip, such as lappingout cutting.Removal chip or figuration should be interpreted as machining process according to DIN8580, wherein by removing unnecessary material with the form of chip, materials processing are become desired shape.At this, chip refers to the particulate be separated from workpiece.
Lappingout is particle (the lappingout suspension that use loosely is dispersed in liquid or paste according to DIN8589, slurry) carry out figuration as abrasive material, this abrasive material guides with the nondirectional as far as possible cutting path of individual particle on the contrary part (lapping tool) usually forming shape.It is by stretching into position formation micro-crack and peeling off little material granule and carry out crisp erosion separation to material adhesion thus realize at lappingout particle that material is removed.Lappingout is based on workpiece, interaction between lappingout particle and lapping tool three.The feature of lappingout is, instrument carrier (lappingout dish, lappingout line) does not comprise hard object matter, and it engages with material in the mode forming chip.
As the lappingout material that the loosely when lappingout cuts is introduced, use by diamond, carborundum, boron carbide, boron nitride, silicon nitride, Zirconium oxide, silica, aluminum oxide, chromated oxide, titanium nitride, tungsten carbide, titanium carbide, vanadium carbide and other materials many, and the particle of the mixture composition of described material.
When cutting semiconductor chip importantly, diamond, carborundum and aluminum oxide, especially carborundum, as lappingout material.
When independent lappingout cutting, each cutting is from work piece cut one section; Then cut multiple section when multiple lappingout cutting simultaneously.Multiple lappingout cutting can utilize single line to carry out, and this line repeatedly turns to via cylinder, thus repeatedly engages with workpiece.So this is called the multiple lappingout cutting of single line.Alternatively, also known certain methods, wherein many solid wires tightened in the frame securely as the string of harp are through workpiece.So this is correspondingly called multi-thread multiple lappingout cutting.Generally speaking, the present invention relates to the multiple section of work piece cut of the arbitrary shape formed from the material processed by the mode can removing chip arbitrarily.In particular, the present invention relates to from the prism-shaped workpiece with rectangle, hexagon or octagon basal plane be made up of glass, sapphire or semi-conducting material or justify body and cut multiple section.The multiple lappingout cutting of single line is more in depth described below.It is also abbreviated as slurry-scroll saw cut (SMWS, "
slurry multi-
wire
slicing ").
A kind of equipment being used for single line multiple lappingout cutting (" slurry-scroll saw is cut ") comprises the sawline as main device characteristic, at least two level with one another and the sawline guide roller be arranged in parallel (Drahtf ü hrungsrollen), volume lower lower and volume upper bobbin, for the device tightened in advance sawline on sawline is longitudinal, can be used for by workpiece perpendicular to sawline guide roller axis the feed arrangement of plane feeding tightened by these axles and the device being used for applying with the form of the loose slurry of hard object matter in carrier fluid abrasive material.Sawline guide roller is columniform, and installs in the mode that can rotate around its longitudinal axis.Its side has multiple around axle and each other equidistant groove substantially in concentric fashion.
When slurry-scroll saw is cut, sawline utilizes groove spirally repeatedly to be guided via sawline guide roller when tightening, thus single sawline section is arranged in parallel and the row's of being formed grid (Gatter).Rotated in the same manner by sawline guide roller, make sawline from volume lower lower volume, and roll up and tighten on volume upper bobbin.At this, the sawline Duan Jun of row's grid vertically moves along sawline in parallel with each other.Below for the purpose of simplifying the description, adopt the cylindrical bar (semiconductor rods) be made up of semi-conducting material as workpiece.The side of this semiconductor rods is bonding with the band (sawing band) be such as made up of glass or graphite be made up of expendable material run vertically, and the mode utilizing this band semiconductor rods to be parallel to the axle of sawline guide roller with its workpiece spindle is clamped in feed arrangement.
By arranging the mode of the vertical line of grid towards row's grid feeding rod lentamente to be parallel to sawing, workpiece being contacted with row's grid with the section that its side is relative with sawing band, and transversely produce power at sawline between instrument (row's grid) and workpiece.Due to the relative motion of sawing line workpiece and row's grid through this plant running, implement material at pressure with when adding abrasive material and remove.Keep sawline laterally to tighten by further continuous feed rod, make sawline arrange the whole cross section of grid through workpiece, obtain multiple section simultaneously.
The multiple lappingout cutting of single line can be implemented with constant moving direction through whole section or with contrary moving direction by the sawline section of row's grid.At this, carry out cutting when continuously reversing sawline direction and there is special significance, because avoid the specified disadvantages of to cut into slices for the gained flatness that obtains and positive/negative the depth of parallelism by direction reversion.Asymmetry between the approaching side of sawline section and the receding side of sawline section can be reversed by direction and average out, and is partly compensated thus, and can reduce sawline consumption by direction reversion.
According to pilgrim's step type method (Pilgerschritt-Verfahren, " motion of pilgrim's paces ", " sawline reciprocating motion ") the direction reversion that runs of sawline comprise and move with the first sawline of the first sawline longitudinal direction along the first length and move with the second sawline of the second direction just the opposite with first direction along the second length, wherein select the second length to be less than the first length.For each pilgrim's paces, amount to the sawline length corresponding to these two length sums through workpiece, and in this sawline section engaged with workpiece sawing only from rolling up lower lower towards the numerical value rolling up upper bobbin and continue the difference moved corresponding to these two length.Therefore, in pilgrim's step type method, sawline is repeatedly used with the ratio that these two length sums are poor with it.
After passing whole workpiece cross section, sawline row grid arrive the sawing band be bonded on workpiece.Stop further feeding, so taken off from sawing row grid by the workpiece of multiple cut-out by reversion direction of feed again.So work piece cut is become multiple section, they are bonded on the sawing band of cut-out half with a part for its circumference in equidistant and parallel to each other and perpendicular to workpiece spindle mode.By eliminating adhesive bond with chemistry, heating or mechanical system, by slice separation, and they are delivered to other following process depending on application.
Slurry-scroll saw that such as EP0798091A2 describes for cutting semiconductor chip is cut and suitable device.
The flatness of the section of the cutting realized by the cutting of sawline lappingout is damaged by multiple effect.Comprise the effect of following aspect: the wearing and tearing of the conveying in sawing gap of the kinematics of sawline, abrasive material and distribution, sawline and sawing particle.The impact of especially severe is there is in thermal process on cutting result.
DE10122628 discloses, and inputs heat by figuration effect and friction process to workpiece, and it causes the axial relative motion between workpiece and sawline section.In cylindrical work, the length that sawing line engages with workpiece changes along with sawing process.Therefore, input heat and the axial relative motion therefore between workpiece and sawline section in time lentamente (quasistatic ground) change.At incision workpiece and when cutting out from workpiece, there is the flip-flop of length of action, and the cutting speed produced when sawline is laterally tightened consistently is high especially.Therefore, in incision with cause strong especially axial relativity shift between workpiece and row's grid when cutting out, thus cause all sections of sawing substantially in an identical manner and identical degree produce relative to the bending flatness deviation of desirable sawing plane.This is called the flatness deviation of sawing into or sawing out fluctuation and is harmful to especially, because it has long wavelength's (several centimetres), and only damages the front of section and the depth of parallelism (thickness uniformity) at the back side at this slightly.Because semiconductor wafer demonstrates and is essentially flexible characteristic in centimetre (or larger) scope, saw into or saw out fluctuation so remove cannot eliminate or only can eliminate deficiently by subsequent process steps enforcement material.
The section of fluctuation like this is not suitable for requiring high application.Lappingout cut large workpiece particularly lappingout cut very large workpiece become section time, the defect that these unexpected heat are brought out is obvious especially.The diameter (equivalent diameter) of homalographic circle when its cross section along the main shaft with minimum rotation inertia projects with large diameter workpiece is more than or equal to 300mm; The equivalent diameter with the workpiece of very large diameter is more than or equal to 450mm.
JP10180750 describes a kind of method, the temperature being wherein supplied to the abrasive material in sawing gap by spraying to sawing row's grid from top regulates in the temperature of abrasive material and is regulated in thermometric closed controlled circulation, thus offsets the heating phenomenon changed in time.
DE10122628B4 describes a kind of method, wherein utilizes and depends on that time and cutting process regulate the cooling agent of temperature to wash away all parts be positioned at above sawline row grid in side of rod from four sides, thus regulate temperature to bar.
EP0798091A2 describes a kind of method, towards the feed speed of sawing row grid, the volume flow of wherein supplied abrasive material, viscosity and bar depend on that cutting process changes.
Finally, US7,959,491B2 describes a kind of method, wherein from sawing until in the whole cutting process of sawing out, but depend on the present position of row's grid in bar, the temperature of the lappingout cutting agent supplied continues to raise monotonously, therefore depends on that the row position of grid in bar partly compensate for fuel factor.
If workpiece is transparent or is at least transparent in specific spectral region, then can observe the cutting gap be hidden in bar.Cutting zone on the bar be made up of silicon transparent in infrared range of spectrum utilizes the thermal imaging of thermal imaging camera observation to show, the heat input in sawing gap and in the length in sawing gap is uneven.Especially observe, the temperature in cutting gap along with entering from sawline until the length of action that exits of sawline and raising.That exits at sawline not long ago reaches the hottest point; Directly from the teeth outwards when sawline exits, can by the heat radiation on the Surface of Rod Bar near this point and cross-ventilation, temperature declines again a little.Therefore, heat along sawline engagement in very complicated mode.
In the cutting gap of the workpiece be made up of silicon, temperature sawline length of action observed more than 20 DEG C raises, and around still uncut silicon bulky single raises about 5 DEG C.If sawline traffic direction reversion during the lappingout cutting preferably implemented in pilgrim's step type method, then the thermal gradient on sawing gap is reversed with short time scale (several seconds).The fluctuation of this dynamic temperature is sizable, occurs, considerably beyond the average workpiece temperature only changed lentamente in cutting process with the frequency short time of pilgrim's paces.
These known methods only compensate for quasistatic variations in temperature slowly.This is not suitable for compensating rapidly and obviously larger variations in temperature and impact thereof, the fluctuation that especially cut section produces.
Summary of the invention
The object of the invention is to, be provided for equipment and the method for cutting multiple section from workpiece simultaneously, wherein compensate rapid and high temperature fluctuation as far as possible when lappingout cut workpiece, and avoid actual cut surface relative to the deviation of ideal cut plane as far as possible.
Enter from sawline until in the length of action that exits of sawline in cutting gap due to exclusion, drippage with consume and cause abrasive material (slurry) loss, and to distribute unevenly at this.Its concentration and composition change in the length of sawline engagement due to abrasion of particles and Particle Breakage.Enter until sawline exits from sawline, the minimizing of the amount of abrasive material especially causes the width of cutting gap to reduce, and causes the thickness of the section of cutting to increase with wedge shape on sawline traffic direction thus.
This object is also, provides a kind of equipment and method, offsets the loss of abrasive material in sawing gap in sawline length of action, thus does not produce the section that thickness increases on sawline traffic direction.
This object is realized by the equipment for cutting multiple section from workpiece simultaneously, it comprises sawline, at least two levels and to be arranged in parallel with each other and with the reeded cylindrical sawline guide roller of tool that install of mode that can rotate around its axle separately and feed arrangement, wherein sawline is guided around sawline guide roller in a groove, thus between sawline guide roller, there is the level be made up of multiple parallel to each other and sawline section that is that run in a plane arrange grid, comprise in addition and being arranged in above sawline guide roller for by the first jet of abrasive jet in sawline section and be positioned at row's grid parallel beneath in the second nozzle being used for cutting gap cooling agent being ejected into from the side and from below workpiece of the axle of sawline guide roller.
This object is still realized by the method for cutting multiple section from workpiece simultaneously, and it comprises the mode holding workpiece of the axle of the sawline guide roller being parallel to scroll saw by the feed arrangement of scroll saw with the axle of workpiece; Utilize feed arrangement that workpiece is moved in the mode of the row's grid vertically from top by scroll saw, wherein form row's grid by multiple parallel to each other and sawline section that is that run in a plane; The slurry of hard object matter in carrier fluid is supplied to sawline section as abrasive material, simultaneously sawline section implements relative motion by when being rotated in and continuously changing direction of rotation of sawline guide roller relative to workpiece, and this relative motion guides sawline section from approaching side until workpiece is passed through in receding side; Cooling agent is ejected into from the side and from below in the cutting gap formed when workpiece movable is by arranging grid, wherein by being arranged in below row's grid the nozzle parallel with the axle of sawline guide roller by refrigerant injection to cutting gap, and wherein by means of only the relative nozzle in the approaching side position with sawline section by refrigerant injection in cutting gap.
The another kind of slurry of hard object matter in carrier fluid can be used as cooling agent.
Abrasive material used can have characteristic identical except temperature with cooling agent used.
Abrasive material used and cooling agent used can have identical temperature.Abrasive material used and cooling agent used can have different temperature.
The temperature of cooling agent can change by during row's grid at workpiece movable.The temperature of cooling agent can depend on sawline section sawline length of action within the workpiece and change.The temperature of cooling agent can raise along with the increase of sawline length of action, and declines along with the reduction of sawline length of action.
The volume flow of the cooling agent sprayed into can keep constant at workpiece movable by during row's grid.The volume flow of the cooling agent sprayed into can change by during row's grid at workpiece movable.The volume flow of the cooling agent sprayed into can depend on sawline section sawline length of action within the workpiece and change.The volume flow of the cooling agent sprayed into can raise along with the increase of sawline length of action, and declines along with the reduction of sawline length of action.
Temperature and the volume flow of cooling lubricant (K ü hlschmiermittel) can be changed by aforesaid mode simultaneously.
The method is preferred for manufacturing semiconductor wafer, and be particularly preferred for manufacturing the semiconductor wafer that is made up of silicon, its diameter is not less than 300, such as, be the silicon wafer of 450mm for the manufacture of diameter.
Accompanying drawing explanation
Figure 1 shows that the equipment that the principle of cutting according to single line multiple grinding cutting or the multiple lappingout of single line is cut into slices from bar cutting.
The distribution of abrasive material and the distribution of temperature on sawline length of action L when Figure 2 shows that sawing line runs from left to right when using the equipment according to Fig. 1.
The distribution of abrasive material and the distribution of temperature on sawline length of action L when Figure 3 shows that sawing line runs from right to left when using the equipment according to Fig. 1.
When Figure 4 shows that sawing line runs from left to right when the equipment according to Fig. 1 of use in sawline section row grid incision bar time be engraved in the distribution of abrasive material and the distribution of temperature on sawline length of action L.
The distribution of abrasive material and cooling agent and the distribution of temperature on sawline length of action L when Figure 5 shows that abrasive material is injected into row's grid and cooling agent is injected into sawing gap from right side by the utilization nozzle be arranged in below row's grid from left side when sawing line runs from left to right.
The distribution of abrasive material and cooling agent and the distribution of temperature on sawline length of action L when Figure 6 shows that abrasive material is injected into row's grid and cooling agent is injected into sawing gap from left side by the utilization nozzle be arranged in below row's grid from right side when sawing line runs from right to left.
Detailed description of the invention
The present invention is set forth in detail below according to accompanying drawing.
Figure 1 shows that the main element of the equipment for the multiple lappingout cutting of single line, it comprises sawing line 1, sawing line is around left sawline guide roller 3 and right sawline guide roller 4 spirally many windings, guided by groove 2, thus the sawline section (" upperwirestrands ") run in the upside of sawline guide roller is run abreast, and be formed in uniform row's grid 11 between adjacent sawline section with constant distance.Adhesive 17 is utilized to be bonded on sawing band 16 by workpiece 15.Sawing band 16 represents feed arrangement, and it for vertically being moved towards row's grid 11 along arrow 18 by workpiece, and engages with it.In addition, this equipment also comprises left nozzle comb 19 and right nozzle comb 20, and it is for being supplied to left sawline guide roller 3 and right sawline guide roller 4 and the row's of being supplied to grid 11 thus by abrasive material (slurry) with the form of left side long shot stream 22 and right side long shot stream 23.
Sawline guide roller is installed in the mode that can rotate around axle 5 and 6.Their axle and be axle 14 orientation in parallel with each other of workpiece 15 of cylindrical bar in the embodiment shown, and through the summit of an isosceles triangle, the axle of sawline guide roller is connected to become the base of this isosceles triangle.In order to start cutting process, driving a sawline guide roller, such as left sawline guide roller 3, carrying out rotation 7(" master ").Another sawline guide roller (" from ") is right sawline guide roller 4 in this embodiment, by pulling of sawline 1, in the same manner with direction of rotation 8 along with rotating.In the embodiment shown in fig. 1, sawline 1 is sent into from left side with the direction of arrow 9, in the mode repeatedly converted via upper row's grid 11 and run through sawline guide roller via the lower row's grid more than 12 time produced in the opposite direction, finally leave from this equipment with the direction of arrow 10 to the right.The feed arrangement represented by sawing band 16 is in the drawings utilized to make this workpiece 15 vertically mobile by row's grid 11 with direction 18.
Once workpiece 15 is to contact with row's grid 11 on the downside of it, then in direction of feed, (=sawline is horizontal; Sawline horizontal tension) on row grid 11 and workpiece 15 between produce power.By the sawline section run in the same manner in row's grid 11 relative to the relative motion of workpiece, by being ejected into the lappingout agent of being carried by sawline section on sawline row grid and sawline horizontal tension and remove material from workpiece (and sawing line), form sawing gap 13, arrange grid 11 wherein when continuing feeding with the direction of arrow 18 through workpiece 15.
In pilgrim's step type sawing method, the direction that sawline vertically moves 9,10 repeatedly turns to during cutting through workpiece 15 completely, each being wherein called " pilgrim's paces " at this is in the reversion of direction, the length that sawline is mobile longer in one direction, and length mobile shorter in the opposite direction.Thus in each complete pilgrim's paces, amount to and run through cutting gap with the sawline length corresponding to these two length sums; Sawline supply total thus moves the length of the sawline section of engagement after pilgrim's paces of a full implementation from volume lower lower towards volume upper bobbin, but it only corresponds to the difference of described two length.
Figure 2 shows that the side diagram of the main element of the equipment according to Fig. 1, specifically when sawline 1 or row grid 11 sawline section move from left to right with the direction of arrow 9 when.By the jet 22 on left nozzle comb 19 row of being ejected into grid and the nubbin still adhering to the jet 23 on sawline that sprayed by right nozzle comb 20, the overwhelming majority when sawline enters workpiece departs from from surface of the work.Form sawline approaching side region 26, abrasive material is accumulated wherein, and only has a small amount of abrasive material still remained on sawline to be introduced in sawing gap by sawline, thus implements material removal at this.
On the length L in sawing gap 13, enter until sawline leaves from workpiece from sawline, due to exclusion, drippage and Particle Breakage, measured by the position entered from sawline, there is the loss of the abrasive material S of progression, in fig. 2 by illustrated in the curve 24 in the figure of S=S (L).The loss of abrasive material, in sawline length of action in gap to the total amount of the figuration effect that workpiece is implemented and in sawline length of action, sawline and viscosity abrasive material relatively move time the total amount of shear action implemented, cause entering until sawline exits the temperature in the longitudinal rising of sawline sawing gap from sawline.This is illustrated by the curve 25 in the figure of T=T (L) in fig. 2.
The difference of Fig. 3 and Fig. 2 is especially, the sawline traffic direction reversion represented by arrow 9, and runs from right to left.Curve 27 show schematically show the distribution S=S (L) of abrasive material on sawline length of action L, and curve 28 shows and enters the position workpiece until sawline leaves the distribution T=T (L) of temperature on sawline length of action L of the position measurement of workpiece from sawline.
Fig. 4 shows, the distribution S=S (L) of abrasive material and the distribution T=T (L) of temperature is also along with the length of sawline engagement changes.If workpiece such as has shown columniform shape, then sawline length of action L depends on that the feed path electrical path length of workpiece changes.Fig. 4 shows the moment of sawing in workpiece, and wherein sawline length of action L is short especially.Correspondingly, on short sawline length of action L the distribution 37 of abrasive material and the distribution 38 of temperature smaller.But in the moment (starting cutting) of engagement, the change of the amount of abrasive material and the change of temperature can be observed.
Figure 5 shows that enforcement according to during method of the present invention on sawline length of action L the distribution S=S (L) of abrasive material and cooling agent and the distribution T=T (L) of temperature.Equipment according to the present invention also has left nozzle 29 and right nozzle 32 extraly except the device shown in having in FIG.These nozzles are positioned at below sawline row grid 11.The size of the spacing of nozzle makes workpiece 15 nozzle, have enough spaces when arranging grid through sawline.
Nozzle 29 and 32 forms long such as columniform comb respectively, and their axle 41 and 42 is parallel to the axle 14 of workpiece 15 respectively.Comb is made up of multiple point-like single injector, or is designed to long nozzle slot.The length of nozzle 29 and 32 and row's grid are injected on its whole width relative to the axially-aligned of row's grid 11.
In the embodiment shown in Figure 5 of method according to the present invention, sawline 1 and all sawline sections thus in row's grid 11 move from left side, and the abrasive material wherein supplied departs from when sawline enters in workpiece and accumulates in region 26.By nozzle 19, abrasive material is ejected into row's grid from top.In this stage, below row's grid 11, only open nozzle 32.Nozzle 32 is positioned at the nozzle below row's grid, and it is relative with the approaching side position of sawline section, and is ejected into from the side and from below with jet 30 by cooling agent in the cutting gap 13 in workpiece 15.
Because cutting gap is narrow, and become very dark along with deeply carrying out of process of cutting, the cooling agent sprayed into only enters to the specific degree of depth in cutting gap, and therefore only in specific region 31.By being ejected in cutting gap from the side and from below by cooling agent, make region 31 become area especially greatly, the cooling effect of the jet 30 of cooling agent becomes effective especially.Nozzle 32 is preferably set relative to the width 45 of the distance 44 on the surface of workpiece 15 and the jet 30 of cooling agent and angular orientation 46 as follows relative to row's distance 43 of grid 11, nozzle 32, in cutting gap, form the region 31 regulating temperature, it produces the Temperature Distribution T=T (L) on sawline length of action L with the uniformity 40 of maximum possible.
Cooling agent is preferably the slurry in the carrier fluid of cleavage activity hard object matter at water carrier fluid or oil-containing or the carrier fluid containing glycol.Particularly preferably use to have and arrange the slurry of the identical composition of abrasive material that grid spray as cooling agent with from top towards sawline.
If use this to have the slurry of same composition, then ejected coolant also has the effect obtaining extra abrasive material in abrasive material loss side.So obtain the distribution S=S (L) of abrasive material and cooling agent on sawline length of action L, it corresponds to curve 39, and is uniform especially.
Left nozzle 29 and right nozzle 32 preferably arrange as follows, and their axle 41 and 42 and the axle 14 of workpiece 15 form the summit of an isosceles triangle, and its axis 41 and 42 forms base, and wherein this base is parallel to the sawline section of sawline row grid 11.
In embodiment in Figure 5, nozzle 19 is only had to enter the approaching side of workpiece at sawing line 1 by abrasive material 22 row of being ejected into grid 11.The nozzle 20 being engraved in opposite side at this moment keeps closing.By moving with the direction of arrow 9 current sawline from left to right, the abrasive material sprayed by nozzle 20 is taken away from workpiece by the movement of sawline section, in cutting gap, dissection does not occur.Because saving abrasive material, so it is favourable for only carrying out alternating spray by the nozzle 19 or 20 being arranged in current sawline separately and entering the side of workpiece.
Fig. 6 as the supplementary sawline section that shows of Fig. 5 with the situation of the direction of arrow 9 movement from right to left.Below row's grid 11, only open nozzle 29 now, it is relative with the approaching side position of sawline section.By this nozzle, cooling agent is ejected in the cutting gap 13 of workpiece 15 with jet 33.Depend on nozzle 29 relative to row's distance of grid 11, nozzle 29 relative to the volume flow of the jet 33 of the distance on the surface of workpiece 15, the width of jet 33 and angular orientation and cooling agent, in cutting gap 13, form the region 34 effectively regulating temperature especially.Thus, when the traffic direction of sawline section is contrary with Fig. 5, obtain the Temperature Distribution T=T (L) on sawline length of action L, it corresponds to curve 36, and is uniform especially.If use the cooling agent that its composition is consistent with abrasive material used, then the distribution S=S (L) of abrasive material and cooling agent on sawline length of action L corresponding to curve 35 is very uniform equally.
Method according to the present invention preferably includes the single line multiple lappingout cutting implemented according to pilgrim's step type method, and is preferably made up of the sequence of step shown in fig. 5 and fig. according to pilgrim's paces of method of the present invention:
In the first sub-step, sawing line runs from left to right with the direction of arrow 9.At this, on jet 22 row of the being ejected into grid 11 of abrasive material.The right nozzle 32 relative with the approaching side position of sawline section be positioned at below row's grid 11 is opened simultaneously, and the jet 30 of cooling agent is ejected in the region 31 of cutting gap 13.During this period, being positioned at the nozzle 20 above sawline row grid and being positioned at the nozzle 29 arranged below grid is close.Alternatively, also the nozzle 20 be positioned at above sawline row grid can be opened.
In the second sub-step, sawing line runs from right to left.At this, on jet 23 row of the being ejected into grid 11 of abrasive material.The left nozzle 29 relative with the approaching side position of sawline section be positioned at below row's grid 11 is opened simultaneously, and the jet 33 of cooling agent is ejected in the region 34 of cutting gap 13.During this period, being positioned at the nozzle 19 above sawline row grid and being positioned at the nozzle 32 arranged below grid is close.Alternatively, also the nozzle 19 be positioned at above sawline row grid can be opened.
The optimum distance of nozzle 29 and 32 respectively and between row's grid 11, the optimum distance of nozzle 29 and 32 respectively and between surface of the work, the width of the best of jet 30 and 33 and angular orientation and the optimal volume flow of cooling agent that sprays respectively by nozzle 29 and 32 are such as by carrying out trial cut and cut and the Temperature Distribution utilizing thermal imaging camera assess to obtain and being determined by the distribution that the wedge shape degree of section on sawline is longitudinal measuring gained assesses abrasive material and the cooling agent obtained with the arrangement mode changed separately.This optimization procedure is implemented independently for sawing type, because the kind of the quantity of sawline guide roller, size and distance (row's gate length), nozzle 19 and 20 is different according to design series with the hot situation of arrangement mode and machine casing around, therefore for the cooling of the best and the distribution of abrasive material and cooling agent, there is different effects.Optimization procedure can also carry out along with production, namely can not lose productive rate because trial cut cuts.
Claims (12)
1., for cutting the method for multiple wafer from workpiece simultaneously, it comprises
Be parallel to the mode holding workpiece of the axle of the sawline guide roller of scroll saw with the axle of workpiece by the feed arrangement of scroll saw;
Utilize feed arrangement that workpiece is moved in the mode of the row's grid vertically from top by scroll saw, wherein form row's grid by multiple parallel to each other and sawline section that is that run in a plane;
First slurry of hard object matter in carrier fluid is supplied to sawline section as abrasive material, simultaneously sawline section implements relative motion by when being rotated in and continuously changing direction of rotation of sawline guide roller relative to workpiece, and this relative motion guides sawline section from approaching side until workpiece is passed through in receding side;
Cooling agent is ejected into from the side and from below in the cutting gap formed when workpiece movable is by arranging grid, wherein by being arranged in nozzle parallel with the axle of sawline guide roller below row's grid by refrigerant injection to cutting gap, and wherein by means of only the relative nozzle in the approaching side position with sawline section by refrigerant injection in cutting gap, wherein use second slurry of hard object matter in carrier fluid as cooling agent.
2. method according to claim 1, only temperature is different from each other for the first slurry in carrier fluid of hard object matter wherein used and cooling agent used.
3. method according to claim 1, the first slurry in carrier fluid of hard object matter wherein used and cooling agent used have identical temperature.
4. method according to claim 1, the first slurry in carrier fluid of hard object matter wherein used and cooling agent used have different temperature.
5., according to the method for claim 1 or 2, wherein the temperature of cooling agent changes by during row's grid at workpiece movable.
6. method according to claim 5, wherein the temperature of cooling agent depends on sawline section length of action within the workpiece and changes.
7. method according to claim 6, wherein the temperature of cooling agent raises along with the increase of sawline length of action, and declines along with the reduction of sawline length of action.
8., according to the method for claim 1 or 2, the volume flow of the cooling agent wherein sprayed into keeps constant at workpiece movable by during row's grid.
9., according to the method for claim 1 or 2, the volume flow of the cooling agent wherein sprayed into changes by during row's grid at workpiece movable.
10. method according to claim 9, the volume flow of the cooling agent wherein sprayed into depends on sawline length of action within the workpiece and changes.
11. methods according to claim 10, the volume flow of the cooling agent wherein sprayed into raises along with the increase of sawline length of action, and declines along with the reduction of sawline length of action.
12. according to the method for claim 1 or 2, wherein uses the silicon wafer that monocrystalline is 450mm as described workpiece for the production of diameter.
Applications Claiming Priority (2)
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|---|---|---|---|
| DE102012201938.3 | 2012-02-09 | ||
| DE102012201938.3A DE102012201938B4 (en) | 2012-02-09 | 2012-02-09 | A method of simultaneously separating a plurality of slices from a workpiece |
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| CN103240805A CN103240805A (en) | 2013-08-14 |
| CN103240805B true CN103240805B (en) | 2016-02-17 |
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| CN201310049533.4A Active CN103240805B (en) | 2012-02-09 | 2013-02-07 | Cut equipment and the method for multiple section from workpiece simultaneously |
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| US (1) | US9346188B2 (en) |
| JP (1) | JP5579287B2 (en) |
| KR (1) | KR101496391B1 (en) |
| CN (1) | CN103240805B (en) |
| DE (1) | DE102012201938B4 (en) |
| MY (1) | MY165870A (en) |
| SG (1) | SG193085A1 (en) |
| TW (1) | TWI507282B (en) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012209974B4 (en) * | 2012-06-14 | 2018-02-15 | Siltronic Ag | A method of simultaneously separating a plurality of slices from a cylindrical workpiece |
| DE102014208187B4 (en) * | 2014-04-30 | 2023-07-06 | Siltronic Ag | Process for the simultaneous cutting of a large number of slices with a particularly uniform thickness from a workpiece |
| FR3032899B1 (en) * | 2015-02-23 | 2017-03-31 | Commissariat Energie Atomique | WIRE CUTTING DEVICE COMPRISING SPRAY LUBRICATION SYSTEM OF WIRE AND WIRE SPRINKLER CLEANING SYSTEM |
| JP6512132B2 (en) * | 2016-02-25 | 2019-05-15 | 株式会社Sumco | Wafer manufacturing method |
| FR3048903B1 (en) * | 2016-03-15 | 2018-04-13 | Saint-Gobain Placo | METHOD AND DEVICE FOR CUTTING A PLATE OR A PANEL OF POROUS CONSTRUCTION MATERIAL |
| JP6249319B1 (en) * | 2017-03-30 | 2017-12-20 | パナソニックＩｐマネジメント株式会社 | Saw wire and cutting device |
| CN106994640B (en) * | 2017-04-18 | 2022-12-20 | 天津大学 | Movable type line belt grinding device |
| CN107053306B (en) * | 2017-04-18 | 2019-01-18 | 南通市金山纺织有限公司 | Wire type rubber bar shear |
| JP6835213B2 (en) * | 2017-05-02 | 2021-02-24 | 信越半導体株式会社 | Work cutting method and joining member |
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| JP6751900B2 (en) * | 2018-01-29 | 2020-09-09 | パナソニックＩｐマネジメント株式会社 | Metal wire and saw wire |
| TWI695755B (en) * | 2018-11-30 | 2020-06-11 | 環球晶圓股份有限公司 | Adjustable support of slurry sprayer |
| CN109571783A (en) * | 2018-12-27 | 2019-04-05 | 西安奕斯伟硅片技术有限公司 | Spray structure, work piece cut system and the spraying method of cutting line |
| JP6969579B2 (en) * | 2019-01-15 | 2021-11-24 | 信越半導体株式会社 | Work cutting method and wire saw |
| TWI713140B (en) * | 2019-08-29 | 2020-12-11 | 環球晶圓股份有限公司 | Ingot fixing fixture |
| CN111036991B (en) * | 2019-12-26 | 2021-11-16 | 陕西宝成航空仪表有限责任公司 | Machining method of sheet-shaped magnetic steel parts |
| CN111361030B (en) * | 2020-04-24 | 2021-11-23 | 西安奕斯伟材料科技有限公司 | Multi-wire cutting device and multi-wire cutting method |
| CN111421688A (en) * | 2020-05-09 | 2020-07-17 | 西安奕斯伟硅片技术有限公司 | Multi-wire cutting device and multi-wire cutting method |
| EP3922389A1 (en) * | 2020-06-10 | 2021-12-15 | Siltronic AG | Method for separating a plurality of slices from workpieces by means of a wire saw during a sequence of separation operations |
| CN111976043B (en) * | 2020-08-26 | 2022-05-31 | 西安奕斯伟材料科技有限公司 | Crystal bar cutting device and crystal bar cutting method |
| US11717930B2 (en) | 2021-05-31 | 2023-08-08 | Siltronic Corporation | Method for simultaneously cutting a plurality of disks from a workpiece |
| CN113601741B (en) * | 2021-08-09 | 2023-06-23 | 西安奕斯伟硅片技术有限公司 | Device for supplying mortar to a plurality of cutting lines for cutting silicon rods and silicon rod cutting equipment |
| CN114643654A (en) * | 2022-04-21 | 2022-06-21 | 青岛高测科技股份有限公司 | Method for cutting silicon rod by using cross wire, cutting equipment and cutting system |
| CN114701085A (en) * | 2022-04-21 | 2022-07-05 | 青岛高测科技股份有限公司 | Method for vertically cutting silicon rod in double lines, cutting equipment and cutting system |
| CN114888574B (en) * | 2022-04-29 | 2023-03-14 | 安徽通宇金属容器包装有限公司 | Iron sheet cutting device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10249700A (en) * | 1997-03-17 | 1998-09-22 | Super Silicon Kenkyusho:Kk | Cutting method of ingot by wire saw and device thereof |
| KR100207810B1 (en) * | 1994-01-10 | 1999-07-15 | 오쯔보 히데오 | Method and apparatus for cutting wafer by wiresaw |
| JP2004017222A (en) * | 2002-06-17 | 2004-01-22 | Hitachi Cable Ltd | Wire saw cutting device and work cutting method |
| CN101861230A (en) * | 2007-12-11 | 2010-10-13 | 信越半导体股份有限公司 | Method for cutting work by wire saw and wire saw |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2516717B2 (en) * | 1991-11-29 | 1996-07-24 | 信越半導体株式会社 | Wire saw and its cutting method |
| US6067976A (en) | 1994-01-10 | 2000-05-30 | Tokyo Seimitsu Co., Ltd. | Wafer cut method with wire saw apparatus and apparatus thereof |
| TW330884B (en) | 1996-03-26 | 1998-05-01 | Shinetsu Handotai Co Ltd | Wire saw and method of slicing a cylindrical workpiece |
| JPH10180750A (en) | 1996-12-25 | 1998-07-07 | Nippei Toyama Corp | Slurry temperature control device in wire saw |
| JP2000202755A (en) * | 1999-01-12 | 2000-07-25 | Super Silicon Kenkyusho:Kk | Wire washing device |
| JP3734018B2 (en) * | 1999-01-20 | 2006-01-11 | 信越半導体株式会社 | Wire saw and cutting method |
| JP2001328054A (en) * | 2000-05-24 | 2001-11-27 | Toshiba Ceramics Co Ltd | Wire saw and wire saw cutting method |
| JP2002307283A (en) * | 2001-04-19 | 2002-10-23 | Shin Etsu Handotai Co Ltd | Wire saw |
| DE10122628B4 (en) * | 2001-05-10 | 2007-10-11 | Siltronic Ag | Method for separating slices from a workpiece |
| JP4656804B2 (en) | 2001-10-17 | 2011-03-23 | 日立金属株式会社 | Cutting method using wire saw and method for producing rare earth magnet |
| US6889684B2 (en) | 2002-11-06 | 2005-05-10 | Seh America, Inc. | Apparatus, system and method for cutting a crystal ingot |
| JP2006159360A (en) | 2004-12-08 | 2006-06-22 | Sumitomo Electric Ind Ltd | Substrate manufacturing method and semiconductor substrate |
| JP4965949B2 (en) * | 2006-09-22 | 2012-07-04 | 信越半導体株式会社 | Cutting method |
| DE112008003339B4 (en) | 2007-12-19 | 2022-02-24 | Shin-Etsu Handotai Co., Ltd. | Method of cutting a workpiece using a wire saw |
| US8690636B2 (en) * | 2009-05-26 | 2014-04-08 | Hitachi Cable, Ltd. | Compound semiconductor substrate production method |
| JP5566922B2 (en) | 2011-01-21 | 2014-08-06 | 株式会社ノリタケカンパニーリミテド | Fixed abrasive wire and method for manufacturing the same |
| JP5527618B2 (en) | 2011-03-09 | 2014-06-18 | 住友金属鉱山株式会社 | Wire saw cutting equipment |
| JP5427822B2 (en) | 2011-04-05 | 2014-02-26 | ジルトロニック アクチエンゲゼルシャフト | How to cut a workpiece with a wire saw |
-
2012
- 2012-02-09 DE DE102012201938.3A patent/DE102012201938B4/en active Active
-
2013
- 2013-01-25 US US13/749,804 patent/US9346188B2/en active Active
- 2013-02-04 MY MYPI2013000362A patent/MY165870A/en unknown
- 2013-02-04 SG SG2013008552A patent/SG193085A1/en unknown
- 2013-02-05 KR KR20130012678A patent/KR101496391B1/en active IP Right Grant
- 2013-02-05 JP JP2013020316A patent/JP5579287B2/en active Active
- 2013-02-07 TW TW102104798A patent/TWI507282B/en active
- 2013-02-07 CN CN201310049533.4A patent/CN103240805B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100207810B1 (en) * | 1994-01-10 | 1999-07-15 | 오쯔보 히데오 | Method and apparatus for cutting wafer by wiresaw |
| JPH10249700A (en) * | 1997-03-17 | 1998-09-22 | Super Silicon Kenkyusho:Kk | Cutting method of ingot by wire saw and device thereof |
| JP2004017222A (en) * | 2002-06-17 | 2004-01-22 | Hitachi Cable Ltd | Wire saw cutting device and work cutting method |
| CN101861230A (en) * | 2007-12-11 | 2010-10-13 | 信越半导体股份有限公司 | Method for cutting work by wire saw and wire saw |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI507282B (en) | 2015-11-11 |
| JP5579287B2 (en) | 2014-08-27 |
| KR20130092459A (en) | 2013-08-20 |
| MY165870A (en) | 2018-05-18 |
| DE102012201938A1 (en) | 2013-08-14 |
| US9346188B2 (en) | 2016-05-24 |
| TW201336652A (en) | 2013-09-16 |
| JP2013163260A (en) | 2013-08-22 |
| US20130206126A1 (en) | 2013-08-15 |
| DE102012201938B4 (en) | 2015-03-05 |
| CN103240805A (en) | 2013-08-14 |
| SG193085A1 (en) | 2013-09-30 |
| KR101496391B1 (en) | 2015-02-26 |
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