CN203739035U - Device for cutting semiconductor thermoelectric materials - Google Patents
Device for cutting semiconductor thermoelectric materials Download PDFInfo
- Publication number
- CN203739035U CN203739035U CN201420130147.8U CN201420130147U CN203739035U CN 203739035 U CN203739035 U CN 203739035U CN 201420130147 U CN201420130147 U CN 201420130147U CN 203739035 U CN203739035 U CN 203739035U
- Authority
- CN
- China
- Prior art keywords
- cutter sweep
- cutting
- fretsaws
- machine table
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005520 cutting process Methods 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 9
- 239000010432 diamond Substances 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims abstract description 7
- 239000012809 cooling fluid Substances 0.000 claims description 15
- 239000002826 coolant Substances 0.000 claims description 14
- 230000003028 elevating effect Effects 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 4
- 238000005555 metalworking Methods 0.000 description 4
- 239000004576 sand Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 230000005619 thermoelectricity Effects 0.000 description 4
- 238000002224 dissection Methods 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000010730 cutting oil Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 229910001573 adamantine Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The utility model discloses a device for cutting semiconductor thermoelectric materials. The cutting device comprises three rotating tools, multiple fretsaws and a lifting processing table. The three rotating tools are located right above the lifting processing table and distributed in a triangular mode, the multiple fretsaws are arranged on the three rotating tools in parallel in a sleeved mode and can be driven by the three rotating tools to perform reciprocating movement, and then cutting is achieved; the fretsaws are metal fretsaws, and diamond particles are electroplated on the fretsaws. According to the device, the diamond particles are electroplated on existing metal fretsaws, the cutting strength of the fretsaws is according and effectively improved, the production efficiency is accordingly improved, and cost is accordingly reduced.
Description
Technical field
The utility model relates to a kind of semi-conductor thermoelectric material cutter sweep, divides and belongs to thermoelectricity material cutting processing to be cut technical field by International Patent Classification (IPC) (IPC).
Background technology
The raw material of existing semiconductor thermoelectric material to be cut is mostly column, if but want to use processing first to use through the rectangular particle of cutting process, and at the existing rotational workpieces that drives scroll saw to move back and forth that comprises for semiconductor thermoelectric material installation to be cut, carry out line cutting and this rotational workpieces coordinates with lifting machine table and then realize the raw material being positioned on lifting processing table top, the line cutting of this kind of structure is that the mortar spray mixing with cutting oil with green silicon carbide sand grains drops on the gauze of steel wire composition, move back and forth by left and right, make wire drive the carborundum sand grains in mortar to treat cutting material generation dissection, and the cooling fluid being used in conjunction with this cutting equipment is the mortar that carborundum sand grains mixes with cutting oil, and wherein carborundum sand grains is recyclable and then reduce costs, but because scrap in cutting engineering all falls into cooling fluid, cannot realize and reclaiming or expensive recovery, and then raise the cost, utilize 200～400 ms/min of the speed of said structure wire (being scroll saw), cutting gap 0.24 ~ 0.27mm.
Thus, the inventor considers existing thermoelectricity material cutting equipment to be cut to improve, and this case produces thus.
Utility model content
For the deficiencies in the prior art, the utility model provides a kind of semi-conductor thermoelectric material cutter sweep, and thereby it, effectively to increase its cutting intensity is enhanced productivity at the existing metal scroll saw plating diamond particles that powers on, and reduces costs.
For achieving the above object, the utility model is achieved through the following technical solutions:
A kind of semi-conductor thermoelectric material cutter sweep, this cutter sweep comprises three rotary toolings, many scroll saws and lifting machine table; Described three rotary toolings are positioned at directly over lifting machine table and distribution triangular in shape, are sheathed on three rotary toolings and can drive scroll saws move back and forth by three rotary toolings, and then realize cutting and many scroll saws are parallel to each other; Described every scroll saw is the metal scroll saw that is electroplate with diamond particles.
Further, the described metal scroll saw with electroplated diamond is the scroll saw of high rigidity, high-wearing feature being realized to line cutting, this diamond abrasive grain by electroplate mode securely being held on steel wire matrix, the gauze of steel wire scroll saw composition, by left and right reciprocating motion at a high speed, treat cutting material and produce dissection.
Further, described rotational workpieces is cylindric that can be driven by multiple rotating power source, and described power source can be motor etc. realizes the parts of spinfunction.
Further, directly over described lifting machine table, be provided with coolant nozzle, this coolant nozzle periphery is surrounded by three rotary toolings, on this jet pipe downside and end face, offers multiple squit holes.
Further, described coolant nozzle downside extends to form cooling fluid deflector downwards, the suitable formation cooling fluid ejection of the squit hole passage of this cooling fluid deflector and coolant nozzle below; In described coolant pipe, the cooling fluid of ejection is water-soluble metalworking liquid.
Further, the described valency machine table that rises is the processing platform that a below has elevating mechanism, places material to be processed in its platform plane.
Further, described elevating mechanism can be realized lifting by drive processing platforms such as hydraulic cylinder, cylinder and hand-operated rocker arm liftings.
Compared with prior art, advantage of the present utility model:
1, on the basis of existing equipment, steel wire scroll saw is improved to and is electroplate with adamantine scroll saw, and then obtain the line cutting scroll saw of high rigidity, high-wearing feature;
2, on the basis of 1 improvement, original cooling fluid is improved to water-soluble metalworking liquid, thereby liquid is lubricated, chip removal and cooling, realizes the object that cooling fluid reclaims completely.
Brief description of the drawings
Fig. 1 is the utility model structural representation;
Fig. 2 is scroll saw structural representation in the utility model.
Detailed description of the invention
Below in conjunction with accompanying drawing, the utility model is described in further detail:
Embodiment: refer to shown in Fig. 1 to Fig. 2, a kind of semi-conductor thermoelectric material cutter sweep, this cutter sweep comprises three rotary toolings 1, many scroll saws 2 and lifting machine table 3, described three rotary toolings 1 are fixed on frame A, and driving its rotation by the power source being positioned at after frame A, described frame A is a hollow rectangle body.
Refer to shown in Fig. 1 to Fig. 2, three rotational workpieces 1 are positioned at directly over lifting machine table 3 and distribution triangular in shape, each rotational workpieces 1 is cylindric, and many scroll saws 2 are parallel to each other and adjacent scroll saw 2 between gapped this three rotational workpieces 1 that are sheathed on of tool, and drive scroll saw 2 by left and right reciprocating motion at a high speed by these three rotational workpieces 1, treat cutting material B and produce dissection.
Refer to shown in Fig. 1 to Fig. 2, every scroll saw 2 is for being plated on diamond particles C the line cutting scroll saw that forms high rigidity, high-wearing feature on metal scroll saw; Described every scroll saw 2 is all positioned at three lip-deep corresponding separate slots of rotational workpieces 1, forms scroll saw location structure.
Refer to shown in Fig. 1 to Fig. 2, be provided with coolant nozzle 4 directly over lifting machine table 3, these coolant nozzle 4 peripheries are surrounded by three rotary toolings 1, on these jet pipe 4 downsides and end face, offer multiple squit holes.Described coolant nozzle 4 downsides extend to form cooling fluid deflector 41 downwards, and this cooling fluid deflector 41 sprays passage with the suitable formation cooling fluid of squit hole of coolant nozzle below; The cooling fluid of described coolant pipe 4 interior ejections is water-soluble metalworking liquid.The described valency machine table 3 that rises is the processing platform that a below has elevating mechanism, places material to be processed in its platform plane, and described elevating mechanism can be realized lifting by drive processing platforms such as hydraulic cylinder, cylinder and hand-operated rocker arm liftings.
In the utility model, adjacent two scroll saw separate slots are apart from being 0.34～5.14mm, and scroll saw feed speed is 0.5～40m/ minute, and the workbench speed of moving is 0.18～1.0mm/ minute; Electroplated diamond line tension is 20～60N, and Trace speed is 280～600m/ minute, adopts that water miscible cutting fluid is lubricated, chip removal and cooling simultaneously.Can realize thermoelectricity material wafers to be cut and the crystal grain of the high-quality that cuts out 0.2～5mm according to aforementioned data and the utility model structure; And then stock utilization to be cut can be promoted to 36%, cutting speed promotes 50%, and thermoelectricity product maximum temperature difference parameter reaches 71 DEG C (27 DEG C of hot-face temperatures), and owing to adopting water-soluble metalworking liquid, whole cutting technique can be accomplished cleaner production.
Above record, only, for utilizing the embodiment of this origination techniques content, modification, variation that any those skilled in the art use this creation to do, all belong to the scope of the claims that this creation is advocated, and be not limited to those disclosed embodiments.
Claims (4)
1. a semi-conductor thermoelectric material cutter sweep, is characterized in that: this cutter sweep comprises three rotary toolings, many scroll saws and lifting machine table; Described three rotary toolings are positioned at directly over lifting machine table and distribution triangular in shape, are sheathed on three rotary toolings and can drive scroll saws move back and forth by three rotary toolings, and then realize cutting and many scroll saws are parallel to each other; Described every scroll saw is the metal scroll saw that is electroplate with diamond particles.
2. a kind of semi-conductor thermoelectric material cutter sweep according to claim 1, it is characterized in that: directly over described lifting machine table, be provided with coolant nozzle, this coolant nozzle periphery is surrounded by three rotary toolings, on this jet pipe downside and end face, offers multiple squit holes.
3. a kind of semi-conductor thermoelectric material cutter sweep according to claim 2, it is characterized in that: described coolant nozzle downside extends to form cooling fluid deflector downwards the suitable formation cooling fluid ejection of the squit hole passage of this cooling fluid deflector and coolant nozzle below.
4. a kind of semi-conductor thermoelectric material cutter sweep according to claim 1, is characterized in that: the described valency machine table that rises is the processing platform that a below has elevating mechanism, places material to be processed in its platform plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420130147.8U CN203739035U (en) | 2014-03-21 | 2014-03-21 | Device for cutting semiconductor thermoelectric materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420130147.8U CN203739035U (en) | 2014-03-21 | 2014-03-21 | Device for cutting semiconductor thermoelectric materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203739035U true CN203739035U (en) | 2014-07-30 |
Family
ID=51338895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420130147.8U Expired - Lifetime CN203739035U (en) | 2014-03-21 | 2014-03-21 | Device for cutting semiconductor thermoelectric materials |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203739035U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113547652A (en) * | 2021-07-19 | 2021-10-26 | 福州天瑞线锯科技有限公司 | Spacing-adjustable polycrystalline silicon squarer |
-
2014
- 2014-03-21 CN CN201420130147.8U patent/CN203739035U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113547652A (en) * | 2021-07-19 | 2021-10-26 | 福州天瑞线锯科技有限公司 | Spacing-adjustable polycrystalline silicon squarer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 361000 Fujian province Xiamen torch hi tech Zone (Xiangan) Industrial Zone Xiang Ming Road No. 28 building 5F Frestech Patentee after: P&N TECHNOLOGY (XIAMEN) CO.,LTD. Address before: 361000 Fujian province Xiamen torch hi tech Zone (Xiangan) Industrial Zone Xiang Ming Road No. 28 building 5F Frestech Patentee before: PENGNAN ELECTRONIC TECHNOLOGY (XIAMEN) Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20140730 |
|
| CX01 | Expiry of patent term |