CN101579893A - Method and clamp for pretreatment of silicon single crystal bar chips - Google Patents
Method and clamp for pretreatment of silicon single crystal bar chips Download PDFInfo
- Publication number
- CN101579893A CN101579893A CNA2009100326289A CN200910032628A CN101579893A CN 101579893 A CN101579893 A CN 101579893A CN A2009100326289 A CNA2009100326289 A CN A2009100326289A CN 200910032628 A CN200910032628 A CN 200910032628A CN 101579893 A CN101579893 A CN 101579893A
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- single crystal
- silicon single
- bar
- crystal bar
- pretreatment
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to the manufacturing of silicon single crystal chips, in particular to a method and a clamp for the pretreatment of silicon single crystal bar chips. The method for the pretreatment of the silicon single crystal bar chips comprises the following steps: a, processing a cylindrical silicon signal crystal bar by using a normal butting process to form the square cross section with cambered corner parts of the cylindrical silicon signal crystal bar; and b, grinding edges and corners formed at the common borders of four lateral planes on the surface of the bar and four cambered surfaces of the corner parts by using a grinding tool and performing normal surface finishing after the passivation of the edges and corners. Through the treatment by the method, the state of stress of the surface of the bar is improved effectively, the rate of fragments produced during actual production and operation is reduced greatly, and the rate of finished products is improved. The clamp of the invention can be used with the method of the invention to facilitate the grinding of the edge and corner parts of the bar and to ensure the reliability of the implementation of the process.
Description
Technical field
The present invention relates to the manufacturing of silicon single crystal wafer, specifically is a kind of silicon single crystal bar chips pre-treating method and pre-treatment anchor clamps.
Background technology
Adopting method that the cutting of silicon single crystal bar produces wafer normally earlier columned bar to be formed the bight after by butting technique is the square cross-sectional shaped (as accompanying drawing 1) of circular arc, bar to square sectional cuts at the enterprising line of slicer then, forms wafer.The situation of fragment taking place through regular meeting in its section and the transport process, the wafer under the cutting is scrapped, has reduced yield rate.Produce the reason of fragment, be commonly referred to be, just be easy to generate crackedly under external force,, but still be difficult to reduce the generation of fragment though before the monocrystal rod section, all handle in the existing production technology by surface finish because the unbalanced stress on bar surface is even.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of fragment that can effectively reduce in the silicon single crystal wafer manufacture, the silicon single crystal bar chips pre-treating method and the pre-treatment anchor clamps of raising yield rate.
Silicon single crystal bar chips pre-treating method of the present invention is: it is the square sectional of circular arc that a. forms the bight with the butting technique of columniform silicon single crystal bar by routine; B. the corner angle that four the arc surface intersections in four side planes of bar appearance and bight are formed adopt grinding tool to carry out grinding, carry out conventional surface finish after making the corner angle passivation.
Silicon single crystal bar chips pre-treatment anchor clamps of the present invention comprise a pedestal, have two orthogonal bearing-surfaces on the pedestal, have the acute angle angle respectively between the baseplane of two bearing-surfaces and pedestal.
After handling through method of the present invention, improved effectively the bar surface stress state, greatly reduce the probability that produces fragment in actual production and the transport process, improved yield rate.Post processing anchor clamps of the present invention can cooperate the use of the inventive method, and the corner angle of bar partly carry out grinding easily, have guaranteed the reliable enforcement of technology.
Description of drawings
Fig. 1 is that the silicon single crystal bar is through the cross sectional shape schematic diagram behind the butting technique;
Fig. 2 is the structural representation of pre-treatment anchor clamps of the present invention.
The specific embodiment
Silicon single crystal bar chips pre-treating method of the present invention is: a. forms the square sectional that bight shown in Figure 1 is a circular arc with the butting technique of columniform silicon single crystal bar by routine; B. the corner angle 3 that four arc surface 2 intersections in four side planes of bar appearance 1 and bight are formed adopt grinding tools to carry out grinding, carry out conventional surface finish after making the corner angle passivation.
As shown in Figure 2, have on the pedestal 4 of post processing anchor clamps of the present invention between the baseplane 6 of 5, two bearing-surfaces of two orthogonal bearing-surfaces and pedestal and have the acute angle angle respectively.In this anchor clamps use, orthogonal two side planes 1 through the silicon single crystal bar 7 behind the butting technique are placed on the bearing-surface 5 of pedestal, make corner angle 3 that the arc surface in a side plane of bar and a bight has a common boundary towards directly over, use the bistrique of grinding setting directly corner angle partly to be carried out grinding, make the corner angle passivation.
Claims (2)
1, a kind of silicon single crystal bar chips pre-treating method is characterized in that:
A. the butting technique of columniform silicon single crystal bar by routine being formed the bight is the square sectional of circular arc;
B. the corner angle that four the arc surface intersections in four side planes of bar appearance and bight are formed adopt grinding tool to carry out grinding, carry out conventional surface finish after making the corner angle passivation.
2, the silicon single crystal bar chips pre-treatment anchor clamps that use in a kind of method of claim 1 is characterized in that: it comprises a pedestal, has two orthogonal bearing-surfaces on the pedestal, has the acute angle angle respectively between the baseplane of two bearing-surfaces and pedestal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100326289A CN101579893A (en) | 2009-06-30 | 2009-06-30 | Method and clamp for pretreatment of silicon single crystal bar chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100326289A CN101579893A (en) | 2009-06-30 | 2009-06-30 | Method and clamp for pretreatment of silicon single crystal bar chips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101579893A true CN101579893A (en) | 2009-11-18 |
Family
ID=41362270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100326289A Pending CN101579893A (en) | 2009-06-30 | 2009-06-30 | Method and clamp for pretreatment of silicon single crystal bar chips |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101579893A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012171306A1 (en) * | 2011-06-15 | 2012-12-20 | 安阳市凤凰光伏科技有限公司 | Seed crystal production method for casting quasi-monocrystalline silicon ingots |
| CN104476686A (en) * | 2014-10-31 | 2015-04-01 | 内蒙古中环光伏材料有限公司 | Method for cutting solar-grade silicon wafers through ultra-high-density diamond wires |
| CN108714978A (en) * | 2018-07-05 | 2018-10-30 | 青岛高测科技股份有限公司 | A kind of crystal silicon cuts rib mill and falls all-in-one machine |
-
2009
- 2009-06-30 CN CNA2009100326289A patent/CN101579893A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012171306A1 (en) * | 2011-06-15 | 2012-12-20 | 安阳市凤凰光伏科技有限公司 | Seed crystal production method for casting quasi-monocrystalline silicon ingots |
| CN104476686A (en) * | 2014-10-31 | 2015-04-01 | 内蒙古中环光伏材料有限公司 | Method for cutting solar-grade silicon wafers through ultra-high-density diamond wires |
| CN104476686B (en) * | 2014-10-31 | 2017-01-25 | 内蒙古中环光伏材料有限公司 | Method for cutting solar-grade silicon wafers through ultra-high-density diamond wires |
| CN108714978A (en) * | 2018-07-05 | 2018-10-30 | 青岛高测科技股份有限公司 | A kind of crystal silicon cuts rib mill and falls all-in-one machine |
| CN108714978B (en) * | 2018-07-05 | 2024-01-09 | 青岛高测科技股份有限公司 | Crystal silicon edge cutting and grinding integrated machine |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20091118 |