WO2012171306A1 - Seed crystal production method for casting quasi-monocrystalline silicon ingots - Google Patents

Seed crystal production method for casting quasi-monocrystalline silicon ingots Download PDF

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WO2012171306A1
WO2012171306A1 PCT/CN2011/083699 CN2011083699W WO2012171306A1 WO 2012171306 A1 WO2012171306 A1 WO 2012171306A1 CN 2011083699 W CN2011083699 W CN 2011083699W WO 2012171306 A1 WO2012171306 A1 WO 2012171306A1
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single crystal
silicon
crystal silicon
monocrystalline silicon
cut
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PCT/CN2011/083699
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French (fr)
Chinese (zh)
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石坚
熊涛涛
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安阳市凤凰光伏科技有限公司
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Publication of WO2012171306A1 publication Critical patent/WO2012171306A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces

Definitions

  • the present invention relates to the field of crystal growth, and further relates to a method for producing a seed crystal, in particular, a method for producing a seed crystal similar to a single crystal silicon ingot by a casting method.
  • Methods for producing silicon ingots include: a CZ method for producing a single crystal silicon ingot, an ingot casting method for producing a polycrystalline silicon ingot, an FZ method for producing a single crystal silicon ingot, and an EFG production for a silicon ribbon. Due to cost issues, current solar cell wafers mainly use CZ single crystal silicon wafers and cast polycrystalline silicon wafers. The CZ method of single crystal silicon is 4 to 5 times higher than the ingot polycrystalline silicon, and the energy consumption is 5 to 7 times higher, resulting in less and less market share of CZ single crystal silicon.
  • this method can effectively reduce the defects caused by the seed crystal, and the quality of the ingot furnace is similar to that of the single crystal.
  • the casting method produces a single crystal silicon ingot seeding method, and the single crystal silicon crystal orientation is ⁇ 100>, and the specific resistance is 0.1 ⁇ ⁇ - ⁇ , and the polarity is not limited; the following steps are performed:
  • a diameter of the cylindrical single crystal silicon is selected between 130 ⁇ 250mm;
  • a the diameter of the single crystal silicon is selected between 140 ⁇ 240mm;
  • the silicon single crystal is cut into pieces each having a height of 10 to 45 mm by a cutter.
  • the diameter of the single crystal silicon is selected between 150 ⁇ 230mm;
  • the silicon single crystal is cut into pieces of each block having a height of 15 to 40 mm by using a cutting machine.
  • the diameter of the single crystal silicon can also be selected: 130 ⁇ 150mm, or 150 ⁇ 170mm, or 170 ⁇ 190mm, or 190 ⁇ 210mm, or 210 ⁇ 230mm, or 230 ⁇ 250mm, or 150 ⁇ 230mm.
  • the reverse cut can be selected: 50 ⁇ 80mm, or 80 ⁇ 120mm, or 120 ⁇ 160mm, or 160 ⁇ 200mm, or 200 ⁇ 240mm, or 240 ⁇ 260mm, or 260 ⁇ 300mm, or 300 ⁇ 350mm.
  • the e process use a cutting machine to cut the silicon single crystal into a height of 5 to 10 let, 10 to 15 let, 15 to 20 let, 20 to 25 mm, 25 to 30 mm, 30 to 35 mm, 35 to 40 mm, 40 ⁇ 45mm, 45 ⁇ 50mm ingots.
  • the invention has the beneficial effects that: by the control of the method, the defects caused by the seed crystal can be effectively reduced, for example, the polycrystalline grains grow on the sides and the top under normal conditions, so that the growth of the ingot furnace is similar to the quality of the single crystal. improve.
  • the conversion efficiency of the cell produced by the method of the present invention is about 0.1%.
  • the casting method produces a single crystal (or quasi-single crystal) silicon ingot seed crystal production method, and produces a similar single crystal in a cast polycrystalline furnace (GT furnace, and a structural polycrystalline casting furnace using a four-sided heater and a top heater) (Quasi-single crystal), the crystal orientation of the single crystal silicon used is ⁇ 100>, and the resistivity is greater than or equal to 0.1 Q * cm (ohm ⁇ cm), and the polarity is not limited;
  • a diameter of the cylindrical single crystal silicon is selected between 130 ⁇ 150mm (such as 130mm);
  • the ingot is polished to remove the surface damage layer. Clean, dry and packaged, ready to use.
  • the casting method produces a single crystal (or quasi-single crystal) silicon ingot seed crystal production method, and produces a similar single crystal in a cast polycrystalline furnace (GT furnace, and a structural polycrystalline casting furnace using a four-sided heater and a top heater) (quasi-single crystal)
  • the crystal orientation of the single crystal silicon used is ⁇ 100>, and the specific resistance is greater than or equal to 0.1 Q * cm (ohm ⁇ cm), and the polarity is not limited; the following processes are sequentially performed:
  • a diameter of the cylindrical single crystal silicon is selected between 230 ⁇ 250mm (such as 250mm);
  • the ingot is polished to remove the surface damage layer. Clean, dry and packaged, ready to use.
  • the casting method produces a single crystal (or quasi-single crystal) silicon ingot seed crystal production method, and produces a similar single crystal in a cast polycrystalline furnace (GT furnace, and a structural polycrystalline casting furnace using a four-sided heater and a top heater) (Quasi-single crystal), the crystal orientation of the single crystal silicon used is ⁇ 100>, and the resistivity is greater than or equal to 0.1 Q * cm (ohm ⁇ cm), and the polarity is not limited;
  • a the diameter of the cylindrical single crystal silicon is selected to be between 200 mm (mm);
  • the ingot is polished to remove the surface damage layer. Clean, dry and packaged, ready to use.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

A seed crystal production method for casting quasi-monocrystalline silicon ingots utilizes monocrystalline silicon of orientation <100>, having a resistivity of ≥0.1Ω•cm and any polarity. The manufacturing process follows the following order: a. selecting a cylinder of monocrystalline silicon having a diameter of 130 to 250 mm; b. making a reverse cut of 50 to 350 mm at the cut off edge; c. forming a monocrystalline silicon into a square rod with a squaring machine; d. polishing the square rod on four sides with a flat grinding machine; e. cutting the monocrystalline silicon into crystal blocks with a cutting machine, each block having a height of 5 to 50 mm; f. polishing the crystal blocks by chemical or mechanical means to remove a surface damage layer; cleaning, drying, packaging, and storing the crystal blocks for use. Control by the method effectively reduces flaws caused by the seed crystal, thereby improving the quality of quasi-monocrystalline crystal grown in an ingot furnace.

Description

铸造法生产类似单晶硅锭晶种制作方法  Production method similar to single crystal silicon ingot seeding by casting method
技术领域 本发明涉及晶体生长领域， 进一步涉及晶种制作方法， 具体是铸造法生产类似单 晶硅锭晶种制作方法。 BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of crystal growth, and further relates to a method for producing a seed crystal, in particular, a method for producing a seed crystal similar to a single crystal silicon ingot by a casting method.
背景技术 生产硅锭的方法有： CZ法生产单晶硅锭， 铸锭法生产多晶硅锭， FZ法生产单晶 硅锭、 EFG生产硅带等方法。 由于成本问题， 目前太阳能电池片主要使用 CZ法单晶硅 片和铸造法多晶硅片。 CZ法单晶硅由于制造成本是铸锭多晶硅的 4〜5倍， 能耗上高 出 5〜7倍， 导致 CZ单晶硅的市场份额越来越少。 但由于铸锭法生产多晶硅锭， 存在 大量的位错、 晶界， 使得铸锭法多晶硅片制成的电池片， 存在效率偏低的情况， 一直 使铸锭法多晶硅锭无法完全取代 CZ单晶硅锭。 Background Art Methods for producing silicon ingots include: a CZ method for producing a single crystal silicon ingot, an ingot casting method for producing a polycrystalline silicon ingot, an FZ method for producing a single crystal silicon ingot, and an EFG production for a silicon ribbon. Due to cost issues, current solar cell wafers mainly use CZ single crystal silicon wafers and cast polycrystalline silicon wafers. The CZ method of single crystal silicon is 4 to 5 times higher than the ingot polycrystalline silicon, and the energy consumption is 5 to 7 times higher, resulting in less and less market share of CZ single crystal silicon. However, due to the production of polycrystalline silicon ingot by ingot casting method, there are a large number of dislocations and grain boundaries, which makes the cell sheet made of ingot polycrystalline silicon sheet have low efficiency, and the ingot polycrystalline silicon ingot cannot completely replace the CZ single crystal. Silicon ingots.
在国际上， 跨国巨头 BP公司的对用铸锭炉生产类似单晶 （准单晶） 硅锭的工艺 已开发多年， 2010年被 ALD收购，使得 ALD多晶铸锭炉已经小规模开发出铸锭法生产 类似单晶硅锭的设备和工艺。  Internationally, multinational giant BP's process for producing single crystal (quasi-single crystal) silicon ingots for ingot furnaces has been developed for many years. It was acquired by ALD in 2010, making ALD polycrystalline ingot furnaces have been developed on a small scale. The ingot process produces equipment and processes similar to single crystal silicon ingots.
目前， 尚未见到针对在 GT或四面及顶面加热器的铸锭炉生长类似单晶（准单晶） 过程中， 铸造法生产类似单晶 （准单晶）硅锭晶种制作方法的内容的公开报道或专利 申请。 如果晶种制备工艺不过关， 会导致出现大量晶体缺陷， 类似单晶的质量也会受 到影响。  At present, there is no content for the production of a single crystal (quasi-single crystal) silicon ingot seeding method by casting in the process of growing a single crystal (quasi-single crystal) in an ingot furnace of a GT or four-sided and top surface heaters. Public report or patent application. If the seed preparation process is not complete, a large number of crystal defects will occur, and the quality of a single crystal will be affected.
发明内容 本发明的目的就是提供一种铸造法生产类似单晶硅锭晶种制作方法，在 GT或四面 及顶面加热器的铸锭炉生长类似单晶 （准单晶）过程中， 采用该方法， 可有效减少晶 种引起的缺陷， 使得铸锭炉生长类似单晶的质量提高。 SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for producing a seed crystal similar to a single crystal silicon ingot, in a GT or four sides. In the process of ingot furnace growth of the top heater similar to single crystal (quasi-single crystal), this method can effectively reduce the defects caused by the seed crystal, and the quality of the ingot furnace is similar to that of the single crystal.
本发明的目的是通过以下方案实现的：  The object of the invention is achieved by the following scheme:
铸造法生产类似单晶硅锭晶种制作方法， 采用的单晶硅晶向为〈100〉， 电阻率 0. Ι Ω - οπι, 极性不限； 其特征在于： 依次进行以下工序：  The casting method produces a single crystal silicon ingot seeding method, and the single crystal silicon crystal orientation is <100>, and the specific resistance is 0.1 Ι Ω - οπι, and the polarity is not limited; the following steps are performed:
a该圆柱状单晶硅的直径选择在 130〜250mm之间；  a diameter of the cylindrical single crystal silicon is selected between 130~250mm;
b断棱处反切 50〜350mm;  b reverse edge cut 50~350mm;
c采用开方机将单晶硅加工成方棒；  c using a square machine to process single crystal silicon into square bars;
d采用平磨机对方棒四边进行抛光；  d using a flat grinder to polish the other side of the rod;
e采用截断机将硅单晶切割成每块高度在 5〜50mm的晶块；  e cutting the silicon single crystal into pieces each having a height of 5 to 50 mm by using a cutting machine;
f采用化学抛光或机械抛光， 对晶块进行抛光， 去除表面损伤层； 清洗干净， 烘 干包装， 待用。  f Use chemical polishing or mechanical polishing to polish the ingots to remove the surface damage layer; clean, dry and package, and use.
进一步：  Further:
对 a工序： a该单晶硅的直径选择在 140〜240mm之间；  For the a process: a the diameter of the single crystal silicon is selected between 140~240mm;
对 b工序： b断棱处反切 100〜320mm;  For the b process: b reverse edge cut 100~320mm;
对 e工序： 采用截断机将硅单晶切割成每块高度在 10〜45mm的晶块。  For the e process: The silicon single crystal is cut into pieces each having a height of 10 to 45 mm by a cutter.
更进一步：  Further:
对 a工序： 该单晶硅的直径选择在 150〜230mm之间；  For the a process: the diameter of the single crystal silicon is selected between 150~230mm;
对 b工序： b断棱处反切 200〜300mm;  For the b process: b reverse edge cut 200~300mm;
对 e工序： 采用截断机将硅单晶切割成每块高度在 15〜40mm的晶块。  For the e process: The silicon single crystal is cut into pieces of each block having a height of 15 to 40 mm by using a cutting machine.
具体：  Specific:
对 a工序：单晶硅的直径还可选择： 130〜150mm，或 150〜170mm，或 170〜190mm， 或 190〜210mm， 或 210〜230mm， 或 230〜250mm， 或 150〜230mm。  For the a process: the diameter of the single crystal silicon can also be selected: 130~150mm, or 150~170mm, or 170~190mm, or 190~210mm, or 210~230mm, or 230~250mm, or 150~230mm.
对 b工序： 断棱处可反切还可选择： 50〜80mm， 或 80〜120mm， 或 120〜160mm， 或 160〜200mm， 或 200〜240mm， 或 240〜260mm， 或 260〜300mm， 或 300〜350mm。 对 e工序：采用截断机将硅单晶切割成每块高度在 5〜10讓， 10〜15讓， 15〜20讓， 20〜25mm， 25〜30mm， 30〜35mm， 35〜40mm， 40〜45mm， 45〜50mm的晶块。 For the b process: the reverse cut can be selected: 50~80mm, or 80~120mm, or 120~160mm, or 160~200mm, or 200~240mm, or 240~260mm, or 260~300mm, or 300~ 350mm. For the e process: use a cutting machine to cut the silicon single crystal into a height of 5 to 10 let, 10 to 15 let, 15 to 20 let, 20 to 25 mm, 25 to 30 mm, 30 to 35 mm, 35 to 40 mm, 40~ 45mm, 45~50mm ingots.
本发明的有益效果在于： 通过本方法的控制， 可有效地减少晶种引起的缺陷， 如 可避免在通常情况下边上、顶部长出多晶晶粒，使得铸锭炉生长类似单晶的质量提高。 经相关试验表明， 采用本发明提供的方法生产的类似单晶， 制造的电池片转换效率可 上升 0. 1%左右。  The invention has the beneficial effects that: by the control of the method, the defects caused by the seed crystal can be effectively reduced, for example, the polycrystalline grains grow on the sides and the top under normal conditions, so that the growth of the ingot furnace is similar to the quality of the single crystal. improve. The conversion efficiency of the cell produced by the method of the present invention is about 0.1%.
具体实施方式 为了使本技术领域的人员更好地理解本发明方案， 并使本发明的上述目的、特征 和优点能够更加明显易懂， 下面结合实施例对本发明作进一步详细的说明。 The above described objects, features and advantages of the present invention will become more apparent from the aspects of the invention.
实施例 1 :  Example 1
铸造法生产类似单晶 （或称准单晶） 硅锭晶种制作方法， 在铸造多晶炉 （GT炉， 及采用四面加热器及顶部加热器的结构多晶铸造炉） 内生产类似单晶 （准单晶） ， 采 用的单晶硅晶向为〈100〉， 电阻率大于或等于 0. 1 Q * cm (欧姆 ·厘米） ， 极性不限； 依 次进行以下工序： The casting method produces a single crystal (or quasi-single crystal) silicon ingot seed crystal production method, and produces a similar single crystal in a cast polycrystalline furnace (GT furnace, and a structural polycrystalline casting furnace using a four-sided heater and a top heater) (Quasi-single crystal), the crystal orientation of the single crystal silicon used is <100>, and the resistivity is greater than or equal to 0.1 Q * cm (ohm·cm), and the polarity is not limited;
a该圆柱状单晶硅的直径选择在 130〜150mm (如 130mm) 之间；  a diameter of the cylindrical single crystal silicon is selected between 130~150mm (such as 130mm);
b断棱处反切 50〜80mm (如 50mm) ；  b reverse edge cut 50~80mm (such as 50mm);
c采用开方机将单晶硅加工成方棒；  c using a square machine to process single crystal silicon into square bars;
d采用平磨机对方棒四边进行抛光；  d using a flat grinder to polish the other side of the rod;
e采用截断机将硅单晶切割成每块高度在 5〜10mm (如 5mm) 的晶块； 也可以根 据需要切割成其它高度的晶块；  e cut the silicon single crystal into pieces of 5~10mm (such as 5mm) ingots by cutting machine; or cut into other heights as needed;
f采用化学抛光或机械抛光， 对晶块进行抛光， 去除表面损伤层。 清洗干净， 烘 干包装， 待用。  f Using chemical polishing or mechanical polishing, the ingot is polished to remove the surface damage layer. Clean, dry and packaged, ready to use.
实施例 2 :  Example 2:
铸造法生产类似单晶 （或称准单晶） 硅锭晶种制作方法， 在铸造多晶炉 （GT炉， 及采用四面加热器及顶部加热器的结构多晶铸造炉） 内生产类似单晶 （准单晶） ， 采 用的单晶硅晶向为〈100〉， 电阻率大于或等于 0. 1 Q * cm (欧姆 ·厘米） ， 极性不限； 依 次进行以下工序： The casting method produces a single crystal (or quasi-single crystal) silicon ingot seed crystal production method, and produces a similar single crystal in a cast polycrystalline furnace (GT furnace, and a structural polycrystalline casting furnace using a four-sided heater and a top heater) (quasi-single crystal) The crystal orientation of the single crystal silicon used is <100>, and the specific resistance is greater than or equal to 0.1 Q * cm (ohm·cm), and the polarity is not limited; the following processes are sequentially performed:
a该圆柱状单晶硅的直径选择在 230〜250mm (如 250mm) 之间；  a diameter of the cylindrical single crystal silicon is selected between 230~250mm (such as 250mm);
b断棱处反切 300〜350mm (如 350mm) ；  b reverse edge cut 300~350mm (such as 350mm);
c采用开方机将单晶硅加工成方棒；  c using a square machine to process single crystal silicon into square bars;
d采用平磨机对方棒四边进行抛光；  d using a flat grinder to polish the other side of the rod;
e采用截断机将硅单晶切割成每块高度在 45〜50mm (如 50mm) 的晶块； 也可以 根据需要切割成其它高度的晶块；  e cutting the silicon single crystal into pieces of crystal pieces each having a height of 45~50mm (such as 50mm) by using a cutting machine; or cutting into other heights as needed;
f采用化学抛光或机械抛光， 对晶块进行抛光， 去除表面损伤层。 清洗干净， 烘 干包装， 待用。  f Using chemical polishing or mechanical polishing, the ingot is polished to remove the surface damage layer. Clean, dry and packaged, ready to use.
实施例 3 :  Example 3:
铸造法生产类似单晶 （或称准单晶） 硅锭晶种制作方法， 在铸造多晶炉 （GT炉， 及采用四面加热器及顶部加热器的结构多晶铸造炉） 内生产类似单晶 （准单晶） ， 采 用的单晶硅晶向为〈100〉， 电阻率大于或等于 0. 1 Q * cm (欧姆 ·厘米） ， 极性不限； 依 次进行以下工序： The casting method produces a single crystal (or quasi-single crystal) silicon ingot seed crystal production method, and produces a similar single crystal in a cast polycrystalline furnace (GT furnace, and a structural polycrystalline casting furnace using a four-sided heater and a top heater) (Quasi-single crystal), the crystal orientation of the single crystal silicon used is <100>, and the resistivity is greater than or equal to 0.1 Q * cm (ohm·cm), and the polarity is not limited;
a该圆柱状单晶硅的直径选择在 200mm (毫米） 之间；  a the diameter of the cylindrical single crystal silicon is selected to be between 200 mm (mm);
b断棱处反切 200mm;  b reverse edge cut 200mm;
c采用开方机将单晶硅加工成方棒；  c using a square machine to process single crystal silicon into square bars;
d采用平磨机对方棒四边进行抛光；  d using a flat grinder to polish the other side of the rod;
e采用截断机将硅单晶切割成每块高度在 30mm的晶块； 也可以根据需要切割成 其它高度的晶块；  e cut the silicon single crystal into pieces of each block with a height of 30mm by using a cutting machine; or cut into other heights as needed;
f采用化学抛光或机械抛光， 对晶块进行抛光， 去除表面损伤层。 清洗干净， 烘 干包装， 待用。  f Using chemical polishing or mechanical polishing, the ingot is polished to remove the surface damage layer. Clean, dry and packaged, ready to use.
以上所述， 仅为本发明的具体实施方式， 但本发明的保护范围并不局限于此， 任 何熟悉本技术领域的技术人员在本发明揭露的技术范围内， 可轻易想到的变化或替 换， 都应涵盖在本发明的保护范围之内。  The above is only the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any change or replacement that can be easily conceived by those skilled in the art within the technical scope of the present invention is All should be covered by the scope of the present invention.

Claims

权 利 要 求 Rights request
1. 铸造法生产类似单晶硅锭晶种制作方法， 采用的单晶硅晶向为〈100〉， 电 阻率^ ). l Q * cm， 极性不限； 其特征在于依次进行以下工序： 1. The casting method produces a single crystal silicon ingot seed crystal production method, and the single crystal silicon crystal orientation is <100>, and the resistivity is ^). l Q * cm , the polarity is not limited; the feature is that the following processes are sequentially performed:
a该圆柱状单晶硅的直径选择在 130〜250mm之间；  a diameter of the cylindrical single crystal silicon is selected between 130~250mm;
b断棱处反切 50〜350mm;  b reverse edge cut 50~350mm;
c采用开方机将单晶硅加工成方棒；  c using a square machine to process single crystal silicon into square bars;
d采用平磨机对方棒四边进行抛光；  d using a flat grinder to polish the other side of the rod;
e采用截断机将硅单晶切割成每块高度在 5〜50mm的晶块；  e cutting the silicon single crystal into pieces each having a height of 5 to 50 mm by using a cutting machine;
f采用化学抛光或机械抛光， 对晶块进行抛光， 去除表面损伤层； 清洗干净， 烘干包装， 待用。  f Use chemical polishing or mechanical polishing to polish the ingot to remove the surface damage layer; clean, dry and package, and use.
2. 根据权利要求 1所述的铸造法生产类似单晶硅锭晶种制作方法，其特征在 于： 其中， a该单晶硅的直径选择在 140〜240mm之间。 2. The method for producing a single crystal silicon ingot seed crystal according to claim 1, wherein: a diameter of the single crystal silicon is selected to be between 140 and 240 mm.
3. 根据权利要求 1所述的铸造法生产类似单晶硅锭晶种制作方法，其特征在 于： 其中， b断棱处反切 100〜320mm。 3. The method according to claim 1, wherein the method for producing a single crystal silicon ingot seed crystal is characterized in that: b is reversely cut at a broken edge of 100 to 320 mm.
4. 根据权利要求 1所述的铸造法生产类似单晶硅锭晶种制作方法，其特征在 于： 其中， e将硅单晶切割成每块高度在 10〜45mm的晶块。 4. The method for producing a single crystal silicon ingot seed according to the casting method according to claim 1, wherein: e, the silicon single crystal is cut into each of the ingots having a height of 10 to 45 mm.
5. 根据权利要求 1所述的铸造法生产类似单晶硅锭晶种制作方法，其特征在 于： 其中， a该单晶硅的直径选择在 150〜230mm之间。 5. The method according to claim 1, wherein the diameter of the single crystal silicon is selected to be between 150 and 230 mm.
6. 根据权利要求 1所述的铸造法生产类似单晶硅锭晶种制作方法，其特征在 于： 其中， b断棱处反切 200〜300mm。 6. The method for producing a single crystal silicon ingot seed according to the casting method according to claim 1, wherein: b is reversely cut at a broken edge of 200 to 300 mm.
7. 根据权利要求 1所述的铸造法生产类似单晶硅锭晶种制作方法，其特征在 于： 其中， e将硅单晶切割成每块高度在 15〜40mm的晶块。 7. The method for producing a single crystal silicon ingot seed according to the casting method according to claim 1, wherein: e, the silicon single crystal is cut into individual ingots having a height of 15 to 40 mm.
PCT/CN2011/083699 2011-06-15 2011-12-08 Seed crystal production method for casting quasi-monocrystalline silicon ingots WO2012171306A1 (en)

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