CN104129000B - A kind of processing method of heat-exchanging method sapphire seed crystal - Google Patents
A kind of processing method of heat-exchanging method sapphire seed crystal Download PDFInfo
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- CN104129000B CN104129000B CN201410360412.6A CN201410360412A CN104129000B CN 104129000 B CN104129000 B CN 104129000B CN 201410360412 A CN201410360412 A CN 201410360412A CN 104129000 B CN104129000 B CN 104129000B
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Abstract
The present invention relates to a kind of processing method of heat-exchanging method sapphire seed crystal, comprise the steps: that (1) marks two seed crystals parallel with C axle brilliant heavy stone used as an anchor evolution line on sapphire crystal; (2) evolution is carried out along the side's of scratching line; (3) the seed crystal brilliant heavy stone used as an anchor evolution section after clean evolution; (4) the brilliant heavy stone used as an anchor of seed crystal is characterized, seed crystal brilliant heavy stone used as an anchor evolution section identifies sunken region of falling vacant; (5) brilliant for seed crystal heavy stone used as an anchor is fixed on the workbench of vertical numerical control machining center, draws and get seed crystal crystal bar; (6) contrast the defect mark on seed crystal brilliant heavy stone used as an anchor evolution section, defect area is identified out on seed crystal crystal bar; (7) with diamond single line cutting off machine, seed crystal crystal bar is blocked; (8) on surface grinding machine, seed crystal is blocked section to polish, can greatly improve crystal utilization rate, its crystal utilization rate can reach 60 ~ 80%, and seed crystal is quality controllable, and process is simple to operate, improves enterprises production efficiency, reduces entreprise cost.
Description
Technical field
The present invention relates to the processing method of a kind of heat-exchanging method (HEM) sapphire seed crystal.
Background technology
Sapphire crystal is widely used in high-brightness LED backing material, various optical component, various window material.Current heat-exchanging method (HEM) sapphire crystal growth seed crystal used is mainly drawn from whole sapphire crystal and is got, and there are two shortcomings: 1, crystal utilization rate is on the low side, only has 30 ~ 40%; 2, draw get before can not characterize crystal mass, if gained seed crystal existing defects, scrap causing whole sapphire crystal of subsequent growth.
Summary of the invention
Technical problem to be solved by this invention provides a kind of crystal utilization rate high for above drawback, and crystal utilization rate can reach 60 ~ 80%, and seed crystal is quality controllable, heat-exchanging method (HEM) the sapphire seed crystal processing method that process is simple to operate.
Object of the present invention is realized by following technical proposals:
(1) on sapphire crystal, mark two seed crystals parallel with crystal C axle brilliant heavy stone used as an anchor evolution line, two evolution distance between centers of tracks L1 are 95 ~ 100mm;
(2) evolution is carried out, evolution speed 0.1 ~ 0.5mm/min with diamond single line cutting off machine along the side's of scratching line;
(3) the brilliant heavy stone used as an anchor evolution of the seed crystal after evolution section is cleaned, wipe oil and other pollutant with absolute alcohol;
(4) in darkroom, the brilliant heavy stone used as an anchor of seed crystal is characterized, seed crystal brilliant heavy stone used as an anchor evolution section identifies sunken region of falling vacant;
(5) brilliant for seed crystal heavy stone used as an anchor is fixed on the workbench of vertical numerical control machining center, draws and get seed crystal crystal bar, draw rod speed 3 ~ 10mm/min;
(6) contrast the defect mark on seed crystal brilliant heavy stone used as an anchor evolution section, defect area is identified out on seed crystal crystal bar;
(7) with diamond single line cutting off machine, seed crystal crystal bar is blocked, block speed 0.5 ~ 1.0mm/min, block length 36 ~ 41mm;
(8) on surface grinding machine, seed crystal is blocked section to polish, flatness error ± 0.1mm, emery wheel feed speed 0.01mm/ stroke.
Beneficial effect: the processing method of a kind of heat-exchanging method (HEM) sapphire seed crystal of the present invention, this kind of processing method card is used greatly to improve crystal utilization rate, its crystal utilization rate can reach 60 ~ 80%, seed crystal is quality controllable, process is simple to operate, improve enterprises production efficiency, reduce entreprise cost.
Accompanying drawing explanation
Fig. 1 is sapphire crystal evolution schematic diagram of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, the invention will be further described.
Embodiment
As shown in the figure, the processing method of a kind of heat-exchanging method (HEM) sapphire seed crystal, adopts following steps processing sapphire seed crystal:
(1) on sapphire crystal, two seed crystals parallel with C axle brilliant heavy stone used as an anchor evolution line A, B is marked, two evolution distance between centers of tracks L195 ~ 100mm;
(2) evolution is carried out, evolution speed 0.1 ~ 0.5mm/min with diamond single line cutting off machine along the side's of scratching line;
(3) the brilliant heavy stone used as an anchor evolution of the seed crystal after evolution section is cleaned, wipe oil and other pollutant with absolute alcohol;
(4) in darkroom, the brilliant heavy stone used as an anchor of seed crystal is characterized, seed crystal brilliant heavy stone used as an anchor evolution section identifies sunken region of falling vacant;
(5) brilliant for seed crystal heavy stone used as an anchor is fixed on the workbench of vertical numerical control machining center, draws and get seed crystal crystal bar, draw rod speed 3 ~ 10mm/min;
(6) contrast the defect mark on seed crystal brilliant heavy stone used as an anchor evolution section, defect area is identified out on seed crystal crystal bar;
(7) with diamond single line cutting off machine, seed crystal crystal bar is blocked, block speed 0.5 ~ 1.0mm/min, block length 36 ~ 41mm;
(8) on surface grinding machine, seed crystal is blocked section to polish, flatness error ± 0.1mm, emery wheel feed speed 0.01mm/ stroke.
Beneficial effect: the processing method of a kind of heat-exchanging method (HEM) sapphire seed crystal of the present invention, this kind of processing method is used can greatly to improve crystal utilization rate, its crystal utilization rate can reach 60 ~ 80%, seed crystal is quality controllable, process is simple to operate, improve enterprises production efficiency, reduce entreprise cost.
Adopt the technology of the present invention, have sapphire crystal utilization rate high, it is inner without technical characterstics such as recessive defect, seed crystal process are simple to operate that other crystal except the brilliant heavy stone used as an anchor of seed crystal can also process the product of other specification, gained seed crystal.
The above; be only the present invention's preferably detailed description of the invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (1)
1. a processing method for heat-exchanging method sapphire seed crystal, is characterized in that, adopts following steps processing sapphire seed crystal:
(1) on sapphire crystal, mark two seed crystals parallel with C axle brilliant heavy stone used as an anchor evolution line A, B, two evolution distance between centers of tracks L1 are 95 ~ 100mm;
(2) evolution is carried out, evolution speed 0.1 ~ 0.5mm/min with diamond single line cutting off machine along the side's of scratching line;
(3) the brilliant heavy stone used as an anchor evolution of the seed crystal after evolution section is cleaned, wipe oil and other pollutant with absolute alcohol;
(4) in darkroom, the brilliant heavy stone used as an anchor of seed crystal is characterized, seed crystal brilliant heavy stone used as an anchor evolution section identifies sunken region of falling vacant;
(5) brilliant for seed crystal heavy stone used as an anchor is fixed on the workbench of vertical numerical control machining center, draws and get seed crystal crystal bar, draw rod speed 3 ~ 10mm/min;
(6) contrast the defect mark on seed crystal brilliant heavy stone used as an anchor evolution section, defect area is identified out on seed crystal crystal bar;
(7) with diamond single line cutting off machine, seed crystal crystal bar is blocked, block speed 0.5 ~ 1.0mm/min, block length 36 ~ 41mm;
(8) on surface grinding machine, seed crystal is blocked section to polish, flatness error ± 0.1mm, emery wheel feed speed 0.01mm/ stroke.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410360412.6A CN104129000B (en) | 2014-07-28 | 2014-07-28 | A kind of processing method of heat-exchanging method sapphire seed crystal |
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| CN201410360412.6A CN104129000B (en) | 2014-07-28 | 2014-07-28 | A kind of processing method of heat-exchanging method sapphire seed crystal |
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| CN104129000A CN104129000A (en) | 2014-11-05 |
| CN104129000B true CN104129000B (en) | 2016-02-10 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104960100B (en) * | 2015-06-15 | 2017-01-04 | 浙江海纳半导体有限公司 | A kind of processing method improving silicon single crystal rod utilization rate |
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| EP0863231A1 (en) * | 1997-03-04 | 1998-09-09 | Ngk Insulators, Ltd. | A process for dicing a preform made of an oxide single crystal, and a process for producing functional devices |
| JP2001031494A (en) * | 1999-07-21 | 2001-02-06 | Nippon Steel Corp | Production of silicon single crystal wafer |
| CN1490437A (en) * | 2002-10-15 | 2004-04-21 | 北京有色金属研究总院 | Silicon seed crystal for straight drawing monocrystal growth and its process |
| CN101603202A (en) * | 2009-05-11 | 2009-12-16 | 北京石晶光电科技股份有限公司 | A kind of seed crystal working method that can present the quartz crystal characteristic structure and shape |
| CN102241077A (en) * | 2011-06-15 | 2011-11-16 | 安阳市凤凰光伏科技有限公司 | Method for manufacturing similar mono-crystal silicon ingot seed crystal by adopting casting process |
| CN102873770A (en) * | 2012-09-24 | 2013-01-16 | 孙新利 | Method for processing orientation-deflected seed crystals |
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2014
- 2014-07-28 CN CN201410360412.6A patent/CN104129000B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0863231A1 (en) * | 1997-03-04 | 1998-09-09 | Ngk Insulators, Ltd. | A process for dicing a preform made of an oxide single crystal, and a process for producing functional devices |
| JP2001031494A (en) * | 1999-07-21 | 2001-02-06 | Nippon Steel Corp | Production of silicon single crystal wafer |
| CN1490437A (en) * | 2002-10-15 | 2004-04-21 | 北京有色金属研究总院 | Silicon seed crystal for straight drawing monocrystal growth and its process |
| CN101603202A (en) * | 2009-05-11 | 2009-12-16 | 北京石晶光电科技股份有限公司 | A kind of seed crystal working method that can present the quartz crystal characteristic structure and shape |
| CN102241077A (en) * | 2011-06-15 | 2011-11-16 | 安阳市凤凰光伏科技有限公司 | Method for manufacturing similar mono-crystal silicon ingot seed crystal by adopting casting process |
| CN102873770A (en) * | 2012-09-24 | 2013-01-16 | 孙新利 | Method for processing orientation-deflected seed crystals |
Non-Patent Citations (1)
| Title |
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| 半导体Si单晶方籽晶定向切割工艺;刘京生;《半导体材料和工艺技术》;20100731;第35卷;第135-137页 * |
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Effective date of registration: 20230104 Address after: 100102 20628, Floor 2, Building A1, No. 1, Huangchang West Road, Dougezhuang, Chaoyang District, Beijing Patentee after: Youran Walker (Beijing) Technology Co.,Ltd. Address before: 212200 new materials Industrial Park, Youfang Town, Yangzhong City, Zhenjiang City, Jiangsu Province Patentee before: JIANGSU JESHINE NEW MATERIAL Co.,Ltd. |
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