CN102873770A - Method for processing orientation-deflected seed crystals - Google Patents
Method for processing orientation-deflected seed crystals Download PDFInfo
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- CN102873770A CN102873770A CN201210369339XA CN201210369339A CN102873770A CN 102873770 A CN102873770 A CN 102873770A CN 201210369339X A CN201210369339X A CN 201210369339XA CN 201210369339 A CN201210369339 A CN 201210369339A CN 102873770 A CN102873770 A CN 102873770A
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- 239000013078 crystal Substances 0.000 title claims abstract description 211
- 238000012545 processing Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 238000005520 cutting process Methods 0.000 claims abstract description 36
- 230000012010 growth Effects 0.000 claims abstract description 16
- 238000003801 milling Methods 0.000 claims abstract description 4
- 238000005498 polishing Methods 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims abstract description 3
- 238000003672 processing method Methods 0.000 claims description 12
- 239000000284 extract Substances 0.000 claims description 6
- 229920000297 Rayon Polymers 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 abstract 3
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a method for processing orientation-deflected seed crystals. The method includes selecting crystal ingots meeting specific requirements and determining directions of main reference planes according to growth edge lines; performing primary rounding processing by a rounder; precisely positioning the main reference planes by an X-ray orientation diffraction instrument and finding OF planes of orientation deflection; performing adjusted orientation deflection cutting for an end surface of each crystal ingot by an internal dicing saw to meet specified requirements on the orientation deflection and parallelly cutting another end surface of the crystal ingot; performing secondary rounding processing according to the orientation-deflected end surfaces; perpendicularly extracting seed crystals from the processed crystal ingots by a milling machine and a seed crystal extracting device; performing clamped surface processing, chemical polishing and cleaning for the extracted seed crystals to obtain the orientation-deflected seed crystals. By using the orientation-deflected seed crystals processed by the method for producing orientation-deflected silicon wafers, the processing yield can be effectively increased, the yield of the wafers from crystal bars in unit weight can be effectively increased, and the silicon wafer chamfering processing efficiency can be effectively improved.
Description
Technical field
The invention belongs to semiconductor silicon single crystal growth field, particularly a kind of silicon single crystal monotectic is to the preparation method of seed crystal, can realize that accurate crystal orientation departs from, satisfy epitaxial substrate silicon chip etc. and monotectic is arranged to the silicon chip production and processing demand that requires, can reduce the production loss, improve piece rate, reduce processing capacity.
Background technology
For semi-conductor silicon chip, prolong living degree according to manufacturing procedure before the difference of Surface Machining mode and the element manufacturing and can be divided into cutting blade, abrasive sheet, polished silicon wafer, epitaxial wafer etc.Distinguish according to the crystal orientation mainly contain＜111,＜100,＜110〉crystal orientation, wherein again with＜111 〉,＜100〉crystal orientation the most common.Because device making technics or chip technology require different can departing from the crystal orientation of silicon chip different requirements is arranged, can be divided into again positive crystal orientation silicon chip and monotectic to silicon chip according to this requirement.Monotectic generally has to silicon chip and departs from 2.5 ° and 4 ° two kinds, and it is different that both Main Differences are that thereafter the road adds the man-hour epitaxy technique.
Silicon monocrystal growth belong to the two-dimensional stepped growth mechanism, the crystal orientation of crystal determines by the seed crystal crystal orientation, the crystal orientation of＜111〉the seeded growth crystal that obtain is exactly＜111〉crystal orientation.For common silicon chip, be positive crystal orientation without generally requiring the crystal orientation in the specific (special) requirements situation.At present crystal growth all adopts positive crystal orientation seed crystal to carry out the crystal growth.In order to obtain monotectic to silicon chip, the monocrystal rod in positive crystal orientation need to be departed from original crystal orientation cutting and can obtain monotectic to silicon chip.The deviation distance of crystal bar and departure degree are by crystal orientation degree of bias size and boule length decision, and the crystal orientation degree of bias requires larger, and crystal bar departs from larger; Crystal bar is longer, and the crystal bar deviation distance is larger.
At present general cutting all adopts multi-line cutting process to carry out the monocrystal rod cutting, multi-wire saw equipment cutting monotectic requires crystal bar according to specifying the crystal orientation degree of bias to glue on anchor clamps to silicon chip, and be mounted on the multi-wire saw equipment, multi-wire saw equipment belongs to precise machining equipment, limited space in the processing storehouse, if crystal bar departs from excessive, can cause crystal bar to exceed processing storehouse horizontal width scope, descend along with crystal bar in the multi-wire saw process, crystal bar will touch processing edge, storehouse, cause and seriously fall sheet, the production accidents such as broken string.In the large situation of the crystal orientation degree of bias in addition can cause crystal bar directly with the sand spraying gear for multi touching, can't realize cutting.
The crystal orientation is departed from conference and is caused the crystal bar two ends a large amount of imperfect silicon chips to occur during simultaneously monocrystalline crystal bar cutting, can't utilize, and has increased the crystal bar loss, and the piece rate that greatly reduces affects production efficiency and cost.
In addition, the situation cutting successful silicon chip larger for the crystal orientation degree of bias belongs to typically " elliptical piece ", there is certain difficulty of processing in this silicon chip in conventional chamfer machining process, because silicon chip is shaped as ellipse, be difficult to realize accurate centering, exist the edge to go thick amount inconsistent in the chamfer process, when serious even can't realize chamfering.If the silicon chip that does not need to carry out chamfering also can because of silicon chip shape " ellipticalness " in rear road device process, be introduced various processing unusual, such as problems such as litho pattern skews.
Patent CN 101537666A " processing method of seed crystal with big drift angle " mainly describes a kind of GaAs and uses to get the seed crystal with big drift angle processing method, the method is suitable for the large deflection angle degree, wherein relate to＜drift angle, 111〉face crystal orientation is 13～22 °, be difficult to realize accurate control, and the method is suitable for arsenide gallium monocrystal, arsenide gallium monocrystal is compound element monocrystalline, upwards certain difference is still arranged with silicon single crystal single-element monocrystalline at crystal, can't be suitable for.
Summary of the invention
The purpose of this invention is to provide a kind of silicon single crystal monotectic to the processing method of seed crystal, with the monotectic on the specific direction to the seeded growth monotectic to monocrystalline, be used for the processing monotectic to silicon chip, so that the silicon single crystal crystal bar is realized the skew of all or part of crystal orientation, crystal orientation departure degree when reducing multi-wire saw before multi-wire saw processing; Depart from the crystal orientation when reducing sticky stick; Reduce the silicon chip ovality, reduce chamfering unusual; Simultaneously can also reduce the cutting loss, increase piece rate.
The monotectic that the present invention announces departs to the crystal orientation of seed crystal particular orientation, its offset direction refers to depart from the OF face (so-called OF face is that the monotectic that defines in the GB departs from face to the crystal orientation of silicon chip appointment), namely according to growth axis line justification main reference plane position, along the main reference plane of crystal bar axially to nearest＜110 crystal orientation departs from certain angle, general 1.5～3 °.
For solving the problems of the technologies described above, the present invention adopts following method:
1, choose one section not round as a ball dislocation-free monocrystalline silicon crystal bar, length is 130～140mm approximately.
2, main reference plane position is got in line selection according to growth axis, and carries out mark with diamond pen at the crystal ingot end face.
3, it is once round as a ball that the crystal ingot that will carry out mark carries out external diameter.
4, round as a ball good crystal ingot is placed on the diffractometer of X-ray crystal orientation, open X-ray crystal orientation diffractometer equipment, carry out spot check and confirm, and aim at ray test end face with reference to the face label side, seek accurately＜110 reference plane position, and carry out mark.
5, accurately search the OF face that helps reference plane position to confirm minimum distance according to X-ray crystal orientation diffractometer, the main reference plane normal direction is vertical, and so-called OF face is that monotectic departs from face to the crystal orientation of silicon chip appointment.
6, the crystal ingot that will carry out mark carries out viscose, and the viscose position is main reference plane position, crystal ingot is placed to carry out the crystal orientation on the inner circle cutting machine and depart from cutting after glue is done.
7, adjust the inner circle cutting machine navigation system, make crystal ingot deflection OF face, cutting crystal ingot end face.
8, the crystal ingot end face of well cutting is placed carry out the crystal orientation test on the diffractometer of X-ray crystal orientation, confirm the crystal orientation irrelevance.
9, repeatedly repeat 7～8 steps and can obtain the end face crystal orientation and depart from specified angle at the OF face, be generally 1.5～3 °.
10, with the parallel cutting of the crystal ingot other end, obtain parallel end face crystal orientation, two ends and have the crystal ingot of specifying the degree of bias.
11, the crystal ingot behind the end face processing is carried out secondary round as a ball, the monotectic after obtaining processing is to crystal ingot.
12, the round as a ball good monotectic of secondary is placed under the milling machine to crystal ingot, the adjustment level adopts seed crystal to extract device and carries out seed crystal and vertically extract.
13, the seed crystal that will extract carries out the surface and clamps station processing.
14, the seed crystal that processes is carried out Surface Chemical Polishing, remove surface damage layer, and clean.
15, cleaned seed crystal is packaged with clean-keeping paper, and depart from and irrelevance in dated crystal orientation.
16, repeat 11～15 steps and can obtain many pieces of monotectics to seed crystal at same crystal ingot, repeat 1～15 step and can obtain multiple batches of monotectic to seed crystal.
17, the monotectic made is used for growing silicon single crystal to seed crystal, can obtains monotectic with the consistent degree of bias of seed crystal to monocrystalline according to conventional crystal growth flow process growing silicon single crystal.
As preferably, the original crystal ingot that the present invention is used for making seed crystal requires dislocation density less than 100/cm
2, carbon content less than 0.2ppma, minority carrier life time greater than 1000 μ s.
As preferably, the present invention adopts X-ray crystal orientation diffractometer to confirm main reference plane position.
As preferably, the present invention adopts water-cooled to carry out round as a ball processing, the processing of crystal ingot end face, seed crystal and extracts processing.
As preferably, the process equipment that the present invention adopts inner circle cutting machine to depart from as crystal ingot end face crystal orientation.
X-ray crystal orientation diffractometer, inner circle cutting machine, milling machine that the present invention adopts are common specification,
Its 26S Proteasome Structure and Function is similar with common similar board.
The present invention has the following advantages:
1, the present invention can realize that crystal bar departs from advance in the front crystal orientation of section when producing monotectic to silicon chip, crystal bar deviation distance when reducing slice processing, convenient use the multi-line cutting machine cutting, when reducing cutting because of crystal bar and the collision of processing storehouse produce sheet, broken string is unusual.
2, the present invention can reduce the silicon chip loss at crystal bar two ends when processing monotectic to silicon chip, increases the silicon chip output, improves piece rate.
3, the present invention can reduce the ovality of cutting blade when processing monotectic to silicon chip, reduces the chamfering removal amount, reduces wafer chamfering unusual, improves the degree of accuracy of silicon chip centering.
Description of drawings
The invention will be further described below in conjunction with the drawings and specific embodiments:
Fig. 1 is the round as a ball stand-by crystal ingot diagram of external diameter of describing among the present invention;
Fig. 2 is that crystal ingot diagram after the processing is departed from the end face crystal orientation among the Fig. 1 that describes among the present invention;
Fig. 3 is the round as a ball rear diagram of crystal ingot external diameter among the Fig. 2 that describes among the present invention.
Fig. 4 is that the vertical seed crystal of Fig. 3 crystal ingot end face of describing among the present invention is extracted diagram.
Fig. 5 is the seed crystal after Fig. 4 of describing among the present invention extracts.
Fig. 6 is the processing method schematic flow sheet of describing among the present invention.
The specific embodiment
Embodiment 1
Adopt positive crystal orientation seed crystal and monotectic to carry out respectively monotectic to 4 ° N-type＜100〉silicon single crystal 4 cun silicon chip production and processings to 3 ° seed crystal.
1, crystal growth: adopt 2 CG-3000 single crystal growing furnaces, 14 cun thermal field growths, the 4 cun silicon single crystal of growing respectively, 25kg feeds intake.
2, according to feed, heat, material, sow, seeding, shouldering, turn shoulder, isometrical, tailing-in technique carries out crystal growth, obtains positive crystal orientation crystal bar and monotectic to each one of crystal bar.
3, requiring to carry out respectively monocrystalline according to resistivity cuts off, intercept respectively the long crystal ingot of 300mm on the every crystal ingot, and carry out line according to monotectic to 4 ° respectively and cut viscose glue, adopting the cutting of same multi-line cutting machine, unit type is NTC442 multi-line cutting machine commonly used.
4, crystal bar departs from greatlyr during the crystal bar cutting of positive crystal orientation, touches processing edge, storehouse, damaged 30mm; Monotectic is touchless processing storehouse during to the cutting of 3 ° crystal bar, without unusually damaged.
5, obtain positive crystal orientation crystal bar section yield 86.4%, piece rate 96.2pcs/kg, monotectic is to 3 ° crystal bar section yield 99%, piece rate 110.4pcs/kg.
6, the silicon chip ovality of positive crystal orientation crystal bar processing is large in chamfer process, exist chamfering centering inaccurate, the chamfering difficulty needs to reduce the wafer chamfering diameter and finishes processing, monotectic adds the Non Apparent Abnormality in man-hour to 3 ° wafer chamfering, and the chamfering diameter is than the approximately large 0.1mm of silicon chip of positive crystal orientation crystal bar processing.
In sum, adopt monotectic to carry out monotectic to seed crystal and can produce yield by Effective Raise to silicon chip processing, improve the piece rate of crystal bar Unit Weight, and Effective Raise chamfering production efficiency.
Claims (6)
1. a monotectic is to the processing method of seed crystal, and its processing method is as follows:
1) choose one section not round as a ball dislocation-free monocrystalline silicon crystal bar, length is 130～140mm approximately;
2) main reference plane position is got in line selection according to growth axis, and carries out mark with diamond pen at the crystal ingot end face;
3) it is once round as a ball that the crystal ingot that will carry out mark carries out external diameter, obtains round as a ball good crystal ingot (1-1);
4) round as a ball good crystal ingot is placed on the diffractometer of X-ray crystal orientation, open X-ray crystal orientation diffractometer equipment, carry out spot check and confirm, and aim at ray test end face with reference to the face label side, seek the accurately plane of reference (110) position, and carry out mark;
5) accurately search the OF face that helps reference plane position to confirm minimum distance according to X-ray crystal orientation diffractometer, the main reference plane normal direction is vertical, and so-called OF face is that monotectic departs from face to the crystal orientation of silicon chip appointment;
6) crystal ingot that will carry out mark carries out viscose, and the viscose position is main reference plane position, crystal ingot is placed to carry out the crystal orientation on the inner circle cutting machine and depart from cutting after glue is done;
7) adjust the inner circle cutting machine navigation system, make crystal ingot deflection OF face, cutting crystal ingot end face;
8) the crystal ingot end face of well cutting is placed carry out the crystal orientation test on the diffractometer of X-ray crystal orientation, confirm the crystal orientation irrelevance;
9) repeatedly repeating 7～8 steps can obtain the end face crystal orientation and depart from specified angle at the OF face;
10) with the parallel cutting of the crystal ingot other end, obtain parallel end face crystal orientation, two ends and have the crystal ingot (2-1) of specifying the degree of bias;
11) crystal ingot behind the end face processing is carried out secondary round as a ball, the monotectic after obtaining processing is to crystal ingot (3-1);
12) the round as a ball good crystal ingot of secondary is placed under the milling machine, the adjustment level adopts seed crystal to extract device (4-1) and carries out seed crystal and vertically extract;
13) seed crystal that will extract (5-1) carries out the surface and clamps station processing;
14) seed crystal (5-1) that processes is carried out Surface Chemical Polishing, remove surface damage layer, and clean;
15) cleaned seed crystal (5-1) is packaged with clean-keeping paper, and depart from and irrelevance in dated crystal orientation;
16) repeat 11～15 steps and can obtain many pieces of monotectics to seed crystal at same crystal ingot, repeat 1～15 step and can obtain multiple batches of monotectic to seed crystal;
17) monotectic that processes is used for growing silicon single crystal to seed crystal, can obtains monotectic with the consistent degree of bias of seed crystal to monocrystalline according to conventional crystal growth flow process growing silicon single crystal.
2. monotectic according to claim 1 is characterized in that to the processing method of seed crystal: dislocation density is less than 100/cm
2, carbon content less than 0.2ppma, minority carrier life time greater than 1000 μ s.
3. monotectic according to claim 1 is characterized in that to the processing method of seed crystal: water-cooled is carried out the processing of round as a ball processing, crystal ingot end face, seed crystal is extracted processing.
4. monotectic according to claim 1 is characterized in that to the processing method of seed crystal: adopt X-ray crystal orientation diffractometer to confirm main reference plane position and crystal orientation irrelevance in the seed crystal processing.
5. monotectic according to claim 1 is characterized in that to the processing method of seed crystal: adopt the original deflection end face of inner circle cutting machine processing crystal ingot in the seed crystal processing.
6. according to claim 1 monotectic is to the processing method of seed crystal, and it is characterized in that: the specified angle that depart from the OF face in step (7) crystal ingot one end end face crystal orientation is 1.5-3 °.
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104129000A (en) * | 2014-07-28 | 2014-11-05 | 江苏吉星新材料有限公司 | Method for machining sapphire crystal seeds with HEM |
| CN106222738A (en) * | 2016-08-24 | 2016-12-14 | 包头市山晟新能源有限责任公司 | A kind of preparation method of n type single crystal silicon growth seed crystal |
| CN107972193A (en) * | 2017-10-20 | 2018-05-01 | 苏州奥趋光电技术有限公司 | A kind of processing technology for aluminium nitride seed crystal |
| CN112026030A (en) * | 2020-08-05 | 2020-12-04 | 山西烁科晶体有限公司 | Crystal single-line direction-adjusting cutting method |
| CN112981522A (en) * | 2021-03-11 | 2021-06-18 | 中国电子科技集团公司第四十六研究所 | Method for growing (100) crystal plane beta-phase gallium oxide single crystal by seed crystal deflection angle guided mode method |
| CN113119331A (en) * | 2021-04-25 | 2021-07-16 | 宁夏中欣晶圆半导体科技有限公司 | Method for improving silicon wafer warp by improving crystal orientation deviation angle of <111> crystal bar |
| CN113427650A (en) * | 2021-06-17 | 2021-09-24 | 西北工业大学 | Method for measuring orientation of directionally solidified alloy single crystal and cutting seed crystal |
| CN113696358A (en) * | 2021-08-26 | 2021-11-26 | 西安中晶半导体材料有限公司 | Method for realizing crystal orientation deviation of single crystal through multi-wire cutting |
| CN113787638A (en) * | 2021-09-26 | 2021-12-14 | 宁夏中欣晶圆半导体科技有限公司 | Crystal bar processing method for determining three-dimensional spatial relationship of crystal bar |
| CN113981523A (en) * | 2021-10-09 | 2022-01-28 | 云南鑫耀半导体材料有限公司 | Gallium arsenide seed crystal processing and gallium arsenide single crystal preparation method at different deflection angles |
| CN114179235A (en) * | 2021-12-20 | 2022-03-15 | 常州时创能源股份有限公司 | Preparation process of <110> monotectic silicon wafer |
| CN114193640A (en) * | 2021-12-20 | 2022-03-18 | 常州时创能源股份有限公司 | Preparation method of <100> monotectic silicon wafer |
| CN114347277A (en) * | 2021-11-30 | 2022-04-15 | 中国电子科技集团公司第十一研究所 | Preparation method of InSb wafer |
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| CN104129000B (en) * | 2014-07-28 | 2016-02-10 | 江苏吉星新材料有限公司 | A kind of processing method of heat-exchanging method sapphire seed crystal |
| CN106222738A (en) * | 2016-08-24 | 2016-12-14 | 包头市山晟新能源有限责任公司 | A kind of preparation method of n type single crystal silicon growth seed crystal |
| CN107972193A (en) * | 2017-10-20 | 2018-05-01 | 苏州奥趋光电技术有限公司 | A kind of processing technology for aluminium nitride seed crystal |
| CN112026030A (en) * | 2020-08-05 | 2020-12-04 | 山西烁科晶体有限公司 | Crystal single-line direction-adjusting cutting method |
| CN112981522A (en) * | 2021-03-11 | 2021-06-18 | 中国电子科技集团公司第四十六研究所 | Method for growing (100) crystal plane beta-phase gallium oxide single crystal by seed crystal deflection angle guided mode method |
| CN113119331A (en) * | 2021-04-25 | 2021-07-16 | 宁夏中欣晶圆半导体科技有限公司 | Method for improving silicon wafer warp by improving crystal orientation deviation angle of <111> crystal bar |
| CN113427650A (en) * | 2021-06-17 | 2021-09-24 | 西北工业大学 | Method for measuring orientation of directionally solidified alloy single crystal and cutting seed crystal |
| CN113696358A (en) * | 2021-08-26 | 2021-11-26 | 西安中晶半导体材料有限公司 | Method for realizing crystal orientation deviation of single crystal through multi-wire cutting |
| CN113787638A (en) * | 2021-09-26 | 2021-12-14 | 宁夏中欣晶圆半导体科技有限公司 | Crystal bar processing method for determining three-dimensional spatial relationship of crystal bar |
| CN113787638B (en) * | 2021-09-26 | 2023-08-18 | 宁夏中欣晶圆半导体科技有限公司 | Crystal bar processing method for determining three-dimensional space relation of crystal bar |
| CN113981523A (en) * | 2021-10-09 | 2022-01-28 | 云南鑫耀半导体材料有限公司 | Gallium arsenide seed crystal processing and gallium arsenide single crystal preparation method at different deflection angles |
| CN113981523B (en) * | 2021-10-09 | 2024-03-12 | 云南鑫耀半导体材料有限公司 | Gallium arsenide seed crystal processing and gallium arsenide monocrystal preparation method with different deflection angles |
| CN114347277A (en) * | 2021-11-30 | 2022-04-15 | 中国电子科技集团公司第十一研究所 | Preparation method of InSb wafer |
| CN114347277B (en) * | 2021-11-30 | 2024-04-19 | 中国电子科技集团公司第十一研究所 | InSb wafer preparation method |
| CN114179235A (en) * | 2021-12-20 | 2022-03-15 | 常州时创能源股份有限公司 | Preparation process of <110> monotectic silicon wafer |
| CN114193640A (en) * | 2021-12-20 | 2022-03-18 | 常州时创能源股份有限公司 | Preparation method of <100> monotectic silicon wafer |
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