CN101537666A - Processing method of seed crystal with big drift angle - Google Patents
Processing method of seed crystal with big drift angle Download PDFInfo
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- CN101537666A CN101537666A CN200910064345A CN200910064345A CN101537666A CN 101537666 A CN101537666 A CN 101537666A CN 200910064345 A CN200910064345 A CN 200910064345A CN 200910064345 A CN200910064345 A CN 200910064345A CN 101537666 A CN101537666 A CN 101537666A
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Abstract
The invention discloses a processing method of a seed crystal with a big drift angle. The method comprises the following steps: selecting a relatively complete horizontal gallium arsenide monocrystal ingot with good electrical parameters, determining (111) crystal face on a head of the monocrystal ingot, determining a drift angle value on the crystal face according to crystallographic direction requirement, diffracting with (331) diffraction angle, cutting out monocrystal blocks according to needed length, bonding the cut monocrystal segments with crystal head upward to a graphite plate with bottom fixedly bonded with metal blocks, orientating the drift angle of the (221) crystal face after the bonding, diffracting with the (331) diffraction angle, rotating the monocrystal blocks for 90 degrees after cutting according to needed height, cutting the needed width when the drift angle of the (110) crystal face is determined zero degree, and then cleaning. The method can help solve difficulty of processing the seed crystal with big drift angle, and has simple, accurate and rapid advantages.
Description
Technical field:
The present invention is that a kind of energy solves the processing method of fast, accurately processing seed crystal with big drift angle.
Background technology:
Make high brightness luminescent pipe and high power laser, many usage levels are mixed the low dislocation substrate epitaxial sheet of silicon GaAs, and the crystal orientation is (100) to (111) A inclined to one side 15 °.With (111) seeded growth monocrystalline just, cut out satisfactory wafer, monocrystalline thickness needs to increase, and the increase of thickness is unfavorable to crystal growth.If change the crystal growth direction, i.e. seed crystal (111) drift angle just can head it off.Because the drift angle is big more, required monocrystalline thickness is more little, helps crystal growth more, so seed crystal with big drift angle growth monomers that adopt more, but seed crystal (111) drift angle then is difficult to measure, survey standard as greater than 13 °, still finds no the accurate processing method of closing the big drift angle of seed crystal at present.
Summary of the invention:
The purpose of this invention is to provide a kind of energy and solve the method for fast, accurately processing seed crystal with big drift angle.Technical solution of the present invention is finished as follows, the processing method of seed crystal with big drift angle is, at first choose more complete, the horizontal gallium arsenide single crystal rod that electrical parameter is good, head at single crystal rod is determined (111) crystal face earlier, on crystal face, require to determine the drift angle value according to the crystal orientation, use (331) angle of diffraction diffraction then, cut out single crystal ingot according to Len req, with epoxy resin the monocrystalline section crystal-tipped of intercepting being bonded in the bottom cementation up again has on the graphite cake of metal derby, paste the misalignment angle of directed (211) crystal face of back section, with (311) angle of diffraction diffraction, cut according to desired height, then with the single crystal ingot half-twist, the angle of deviation of fixing (110) crystal face cuts out required width during for zero degree, cleans then to get final product.
The present invention can not only solve the difficult problem of seed crystal with big drift angle processing, and have simply, advantage accurately and fast.
The specific embodiment:
Method of the present invention is at first to choose the horizontal gallium arsenide single crystal rod more complete, that electrical parameter is good, preferably chooses dislocation density≤1000/cm
2Single crystal rod, determine (111) crystal face earlier at the head of single crystal rod then, on crystal face, determine the drift angle value according to the crystal orientation, use (331) crystal face angle of diffraction diffraction again, cut out single crystal ingot according to Len req, then with epoxy resin the single crystal ingot crystal-tipped of intercepting being bonded in the bottom cementation up has on the graphite cake of metal derby, paste the misalignment angle of directed (211) crystal face of back section, with (311) angle of diffraction diffraction, cut according to desired height again, then with the single crystal ingot half-twist, the misalignment angle of fixing (110) crystal face cuts out required width during for zero degree, makes mark and clean getting final product.M ° of (111) directional bias angle of seed crystal be with (331) angle of diffraction diffraction, and (211) directed misalignment angle M ° with (311) diffraction, the diffraction deviation be N ° of the pairing diffraction degree of deviation in (331) and (311), specifically corresponding relation such as following table:
| Seed crystal (111) misalignment angle is M ° | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 |
| (331) (311) diffraction misalignment angle is N ° | 9 | 8 | 7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 |
。
Claims (1)
1, the processing method of seed crystal with big drift angle, it is characterized in that: at first choose more complete, the horizontal gallium arsenide single crystal rod that electrical parameter is good, head at single crystal rod is determined (111) crystal face earlier, on crystal face, require to determine the drift angle value according to the crystal orientation, use (331) angle of diffraction diffraction then, cut out single crystal ingot according to Len req, with epoxy resin the monocrystalline section crystal-tipped of intercepting being bonded in the bottom cementation up again has on the graphite cake of metal derby, paste the misalignment angle of directed (211) crystal face of back section, with (311) angle of diffraction diffraction, cut according to desired height, then with the single crystal ingot half-twist, the angle of deviation of fixing (110) crystal face cuts out required width during for zero degree, cleans then to get final product.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910064345A CN101537666A (en) | 2009-03-09 | 2009-03-09 | Processing method of seed crystal with big drift angle |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910064345A CN101537666A (en) | 2009-03-09 | 2009-03-09 | Processing method of seed crystal with big drift angle |
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| CN101537666A true CN101537666A (en) | 2009-09-23 |
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| CN200910064345A Pending CN101537666A (en) | 2009-03-09 | 2009-03-09 | Processing method of seed crystal with big drift angle |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101973080A (en) * | 2010-10-15 | 2011-02-16 | 北京石晶光电科技股份有限公司济源分公司 | Quartz bar cutting technique |
| CN102152410A (en) * | 2010-12-23 | 2011-08-17 | 万向硅峰电子股份有限公司 | Cutting method for adjusting crystal orientation excursion by rotating single crystal rod |
| CN102873770A (en) * | 2012-09-24 | 2013-01-16 | 孙新利 | Method for processing orientation-deflected seed crystals |
| CN103862584A (en) * | 2014-04-04 | 2014-06-18 | 常州时创能源科技有限公司 | Squaring process and application of monocrystal silicon round bar for solar cells |
| CN104846441A (en) * | 2015-05-28 | 2015-08-19 | 北京航空航天大学 | Cutting preparation method of nickel-based single-crystal alloy seed crystal for casting |
| CN107283078A (en) * | 2016-04-11 | 2017-10-24 | 株式会社迪思科 | Chip generation method and processing direction of feed detection method |
| CN107972193A (en) * | 2017-10-20 | 2018-05-01 | 苏州奥趋光电技术有限公司 | A kind of processing technology for aluminium nitride seed crystal |
| CN112981522A (en) * | 2021-03-11 | 2021-06-18 | 中国电子科技集团公司第四十六研究所 | Method for growing (100) crystal plane beta-phase gallium oxide single crystal by seed crystal deflection angle guided mode method |
| CN113787638A (en) * | 2021-09-26 | 2021-12-14 | 宁夏中欣晶圆半导体科技有限公司 | Crystal bar processing method for determining three-dimensional spatial relationship of crystal bar |
-
2009
- 2009-03-09 CN CN200910064345A patent/CN101537666A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101973080B (en) * | 2010-10-15 | 2013-09-04 | 北京石晶光电科技股份有限公司济源分公司 | Quartz bar cutting technique |
| CN101973080A (en) * | 2010-10-15 | 2011-02-16 | 北京石晶光电科技股份有限公司济源分公司 | Quartz bar cutting technique |
| CN102152410A (en) * | 2010-12-23 | 2011-08-17 | 万向硅峰电子股份有限公司 | Cutting method for adjusting crystal orientation excursion by rotating single crystal rod |
| CN102873770A (en) * | 2012-09-24 | 2013-01-16 | 孙新利 | Method for processing orientation-deflected seed crystals |
| CN102873770B (en) * | 2012-09-24 | 2014-11-19 | 孙新利 | Method for processing orientation-deflected seed crystals |
| CN103862584B (en) * | 2014-04-04 | 2015-09-30 | 常州时创能源科技有限公司 | The evolution technique of monocrystalline silicon round rod used for solar batteries and application |
| CN103862584A (en) * | 2014-04-04 | 2014-06-18 | 常州时创能源科技有限公司 | Squaring process and application of monocrystal silicon round bar for solar cells |
| CN104846441A (en) * | 2015-05-28 | 2015-08-19 | 北京航空航天大学 | Cutting preparation method of nickel-based single-crystal alloy seed crystal for casting |
| CN104846441B (en) * | 2015-05-28 | 2017-09-08 | 北京航空航天大学 | A kind of cutting preparation method cast with Crystal Nickel-based Superalloy seed crystal |
| CN107283078A (en) * | 2016-04-11 | 2017-10-24 | 株式会社迪思科 | Chip generation method and processing direction of feed detection method |
| CN107972193A (en) * | 2017-10-20 | 2018-05-01 | 苏州奥趋光电技术有限公司 | A kind of processing technology for aluminium nitride seed crystal |
| CN112981522A (en) * | 2021-03-11 | 2021-06-18 | 中国电子科技集团公司第四十六研究所 | Method for growing (100) crystal plane beta-phase gallium oxide single crystal by seed crystal deflection angle guided mode method |
| CN113787638A (en) * | 2021-09-26 | 2021-12-14 | 宁夏中欣晶圆半导体科技有限公司 | Crystal bar processing method for determining three-dimensional spatial relationship of crystal bar |
| CN113787638B (en) * | 2021-09-26 | 2023-08-18 | 宁夏中欣晶圆半导体科技有限公司 | Crystal bar processing method for determining three-dimensional space relation of crystal bar |
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Open date: 20090923 |