CN103400913A - Rectangular imaged silicon substrate for growing hexagonal-phase GaN - Google Patents
Rectangular imaged silicon substrate for growing hexagonal-phase GaN Download PDFInfo
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Abstract
The invention discloses a rectangular imaged silicon substrate for growing a hexagonal-phase GaN. The rectangular imaged silicon substrate comprises a silicon (111) surface substrate body, wherein a strip-shaped isolation strip is processed on the upper surface of the silicon substrate body; the strip-shaped isolation strip is composed of vertical isolation strips and transverse isolation strips, which are vertical to each other and are the same in width; the silicon substrate body is divided into a plurality of rectangular growth platforms. The rectangular imaged silicon substrate is characterized in that an included angle between any one angle bisector of each rectangular growth platform and any one diagonal of a regular hexagon corresponding to hexagonally-arrayed atoms on a silicon (111) surface is in a range of 0-5 DEG C. The range of the included angles is limited to guarantee that a transverse groove and a vertical groove, which are formed by the growth of the hexagonal-phase GaN, are basically the same in width, so that effective guarantees are provided for the crystalline quality of an epitaxial layer and the reliability of a subsequent chip manufacture procedure, and the problems in an existing rectangular imaged silicon substrate technology that the uncertainty of the directions of the rectangular growth platforms influences the crystalline quality of the GaN, and the yield and the reliability of a chip are thoroughly solved.
Description
Technical field
The present invention relates to the growth technology of semi-conducting material, relate in particular to a kind of rectangular graph SiClx substrate be used to the six side's phase GaN that grow.
Background technology:
III take GaN as representative/V nitride semi-conductor material is the third generation semi-conducting material after silicon and GaAs, obtains in recent years develop rapidly.III/V nitride comprises GaN, AlN, InN, InGaN and AlGaN etc., it has the direct band gap of 1.9～6.2eV continuous variable, covered from ultraviolet to far emission wavelength, and have the characteristics such as excellent physics, chemical stability, high saturated electrons mobility, aspect the opto-electronic device of blue, green and ultraviolet band, obtaining a wide range of applications, particularly aspect indigo plant, green light LED.
Because the GaN monocrystalline is difficult to obtain, the epitaxial growth of GaN is many to be carried out on foreign substrate.Except the most frequently used sapphire (c face) substrate and 6H-SiC substrate, silicon (111) face substrate is also by extensive concern in recent years.Silicon substrate have low price, size larger, be easy to peel off, conduction, thermal conductivity advantages of higher relatively, and the processing technology of silicon materials and integrated technology quite ripe, make silicon substrate GaN-based LED have the potential advantages that are easy to large-scale integrated.Yet between Si and GaN, have huge lattice mismatch and thermal mismatching, this can introduce huge stress in growth course, causes obtaining high-quality GaN base LED film very difficult on silicon substrate.
At present, existing many units of industry have solved the difficult problem of silicon substrate epitaxial growth high-quality GaN base LED film, and have high-caliber silicon substrate GaN-based LED product to release.wherein whole silicon substrate being divided into to a plurality of regularly arranged independently rectangle growth platform (being rectangular graph SiClx substrate) is one of present mainstream technology route, there are many orthogonal strip isolation strip that silicon substrate is divided into to the independently rectangle growth platform that a plurality of equally distributed shape sizes are identical, described isolation strip can be also can caving in of projection, the GaN material can not be on described isolation strip direct growth, and described isolation is not joined to guarantee epitaxial loayer on each growth platform and the epitaxial loayer on adjacent growth platform with certain width, thereby the traverse furrow groove and the longitudinal furrow groove that there is no the GaN growth between described each growth platform, have been formed, described groove can effectively discharge silicon substrate and epitaxial loayer are introduced due to lattice mismatch and thermal mismatching in the heteroepitaxial growth process huge stress, greatly reduced the crackle in described epitaxial loayer, reduced dislocation density, thereby obtain high-quality GaN base LED thin-film material.
But, existing rectangular graph SiClx substrate technology, the boundary line of not considering the rectangle growth platform with respect to the crystal orientation of silicon (111) face on the epitaxially grown impact of six side's phase GaN on it.The surface of described rectangle growth platform is silicon (111) face, if its boundary line is unreasonable with respect to the crystal orientation design of silicon (111) face, will cause the described traverse furrow groove that forms in the GaN growth course different with the width of longitudinal furrow groove, the unequal power distribution of epitaxial loayer, the crackle hyperplasia, dislocation density increases, and crystal mass descends, and brings larger harmful effect also can for yield and the reliability of follow-up chip processing procedure.Why producing the problems referred to above, is because described boundary line is determining the atomic arrangement situation along boundary line with respect to the crystal orientation of silicon (111) face, and six side's phase GaN depend on the atomic arrangement situation along boundary line along the lateral growth speed of boundary line.Six side's phase GaN aufwuchsplates are (0001) face, and be orthohexagonal the same as the atom of silicon (111) face arranged, and GaN is very fast along the direction growth rate at each angle of orthohexagonal, and growth rate is slower along the direction on regular hexagon limit.The rectangle growth platform has in twos parallel four edges boundary line, and wherein the adjacent edge boundary line is mutually vertical, corresponding orthogonal crystal orientation.If described adjacent edge boundary line is unreasonable with respect to the crystal orientation design of silicon (111) face, make along the atomic arrangement situation difference in adjacent edge boundary line larger, thereby cause GaN different along the lateral growth speed in adjacent edge boundary line, one side that growth rate is fast, the groove that forms is narrower, one side that growth rate is slow, the groove of formation is wider.
Summary of the invention:
The object of the present invention is to provide a kind of rectangular graph SiClx substrate be used to the six side's phase GaN that grow, it can make the width of longitudinal furrow groove and traverse furrow groove basically identical, thereby for the crystal mass of epitaxial loayer and the reliability of follow-up chip processing procedure provide powerful guarantee, also thoroughly solved in existing rectangular graph SiClx substrate technology, the uncertainty of rectangle growth platform direction affects the problem of GaN crystal mass and chip yield, reliability.
The object of the present invention is achieved like this:
A kind of rectangular graph SiClx substrate be used to the six side's phase GaN that grow, comprise silicon (111) face substrate bulk, upper surface (silicon (111) face) in silicon (111) face substrate bulk is processed with the strip isolation strip, the strip isolation strip consists of mutual He Heng isolation strip, vertical isolation strip vertical, that width is identical, the strip isolation strip has been divided into a plurality of rectangle growth platform by the upper surface of silicon substrate body, it is characterized in that:
Arbitrary angular bisector of rectangle growth platform and its surface are that the atom pair of Hexagonal array on silicon (111) face orthohexagonal arbitrary cornerwise angle of answering is in the scope of 0～5 °.
Industry adopts the main reference plane of (110) face as silicon (111) face substrate usually, and main flat limit is at<1-10 > position, above-mentioned geometrical relationship can be described as: the angle on the Yu Zhuping limit, arbitrary boundary line of rectangle growth platform is in 10～20 °, 40～50 ° or 70～80 °.
The length of side of rectangle growth platform is in the scope of 0.1mm～5mm.
The width of strip isolation strip is greater than 2um.
Due to can not direct growth GaN on the strip isolation strip, thereby, along with the growth of GaN, at place, strip isolation strip, can form the groove that there is no the GaN growth, but because GaN has certain lateral growth speed, the width of groove is usually less than the width of strip isolation strip.Corresponding with He Heng isolation strip, vertical isolation strip, groove also is divided into longitudinal furrow groove and traverse furrow groove.
diagonal and the scope of its surface atom pair that be silicon (111) face on the Hexagonal array orthohexagonal arbitrary cornerwise angle of the answering arbitrary boundary line Yu Zhuping limit<1-10 that in other words limit described rectangle growth platform of the present invention by limiting the rectangle growth platform > angular range, the boundary line of rectangle growth platform and the relative crystal orientation of silicon (111) face substrate have been determined, be boundary line and the Si(111 of rectangle growth platform) position relationship of atomic arrangement on face, thereby can guarantee along near the atomic arrangement two adjacent edge boundary lines of rectangle growth platform basically identical, make GaN basic identical along the lateral growth speed in adjacent edge boundary line, therefore can make the width of described longitudinal furrow groove and traverse furrow groove basically identical, the reliability of this crystal mass for epitaxial loayer and follow-up chip processing procedure provides powerful guarantee, also thoroughly solved in existing rectangular graph SiClx substrate technology, the uncertainty of rectangle growth platform direction affects GaN crystal mass and chip yield, the problem of reliability.
The accompanying drawing explanation:
Fig. 1 is the schematic top plan view of rectangular graph SiClx substrate of the present invention;
Fig. 2 is the relative position relation schematic diagram of atomic arrangement structure on the boundary line of rectangle growth platform of the present invention and silicon (111) face.
Fig. 3 is the schematic top plan view after Grown six side's phase GaN films provided by the invention.
Embodiment:
Below in conjunction with embodiment and contrast accompanying drawing method of the present invention is further detailed.
a kind of rectangular graph SiClx substrate be used to the six side's phase GaN that grow, comprise silicon substrate body 1, upper surface (silicon (111) face) 5 in silicon (111) face substrate bulk 1 is processed with strip isolation strip 2, strip isolation strip 2 is by mutually vertical, the vertical isolation strip 3 that width is identical and horizontal isolation strip 4 form, strip isolation strip 2 has been divided into a plurality of rectangle growth platform 5 by the upper surface of silicon (111) face substrate bulk 1, orthohexagonal arbitrary cornerwise angle α that on arbitrary angular bisector of rectangle growth platform 5 and silicon (111) face, the atom pair of Hexagonal array is answered is 0～5 °.
Arbitrary boundary line Yu Zhuping limit<1-10 of rectangle growth platform 5 > 6 angle α is in 10～20 °, 40～50 ° or 70～80 °.
The length of side m of rectangle growth platform 5 is 0.1mm～5mm.
The width d of strip isolation strip 2 is greater than 2um.
Due to can not direct growth GaN on the strip isolation strip, thereby, along with the growth of GaN, at 2 places, strip isolation strip, can form the groove that there is no the GaN growth, but because GaN has certain lateral growth speed, the width of groove is usually less than the width of strip isolation strip.Corresponding with vertical isolation strip 3 and horizontal isolation strip 4, groove also is divided into longitudinal furrow groove 7 and traverse furrow groove 8.
When the orthohexagonal arbitrary cornerwise angle α that answers when the atom pair of Hexagonal array on arbitrary angular bisector of rectangle growth platform 5 and silicon (111) face was 0～5 °, the longitudinal furrow groove 7 that forms after the GaN growth and the width of traverse furrow groove 8 were basically identical.The reliability of this crystal mass for epitaxial loayer and follow-up chip processing procedure provides powerful guarantee, also thoroughly solved in existing rectangular graph SiClx substrate technology, the uncertainty of rectangle growth platform direction affects the problem of GaN crystal mass and chip yield, reliability.
Claims (3)
1. rectangular graph SiClx substrate be used to the six side's phase GaN that grow, comprise silicon (111) face substrate bulk, upper surface (silicon (111) face) in silicon (111) face substrate bulk is processed with the strip isolation strip, the strip isolation strip is by mutually vertical, the He Heng isolation strip, vertical isolation strip that width is identical forms, the strip isolation strip has been divided into a plurality of rectangle growth platform by the upper surface of silicon substrate body, it is characterized in that: orthohexagonal arbitrary cornerwise angle that on arbitrary angular bisector of rectangle growth platform and silicon (111) face, the atom pair of Hexagonal array is answered is 0～5 °.
2. rectangular graph SiClx substrate according to claim 1, is characterized in that: arbitrary boundary line Yu Zhuping limit<1-10 of rectangle growth platform > angle α be in 10～20 °, 40～50 ° or 70～80 °.
3. rectangular graph SiClx substrate according to claim 3, it is characterized in that: the length of side of rectangle growth platform is 0.1mm～5mm.
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| CN103746051A (en) * | 2013-12-04 | 2014-04-23 | 南昌大学 | Silicon substrate having edge isolation structure |
| CN103824854A (en) * | 2014-02-22 | 2014-05-28 | 石以瑄 | Exchange circuit and microwave integrated circuit which have improved line width evenness and fewer defects in channel and are based on high-electron-mobility transistor |
| CN107123715A (en) * | 2017-04-28 | 2017-09-01 | 海迪科（南通）光电科技有限公司 | A kind of positive tetragonal patterned substrate |
| CN107910244A (en) * | 2017-11-01 | 2018-04-13 | 大连芯冠科技有限公司 | Using silicon graphics substrate growth epitaxy of gallium nitride method |
| CN111785609A (en) * | 2019-04-04 | 2020-10-16 | 世界先进积体电路股份有限公司 | Semiconductor structure and manufacturing method thereof |
| TWI718506B (en) * | 2019-03-25 | 2021-02-11 | 世界先進積體電路股份有限公司 | Semiconducotr structure and method for fabricating the same |
| CN113838952A (en) * | 2021-09-06 | 2021-12-24 | 厦门乾照半导体科技有限公司 | Epitaxial structure based on Nano-LED application, chip and preparation method |
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Address after: Annex building 2, engineering technology research center, No. 679, aixihu North Road, Nanchang high tech Industrial Development Zone, Nanchang City, Jiangxi Province Co-patentee after: Nanchang University Patentee after: NANCHANG GUIJI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 330047 No. seven, No. 192, hi tech Zone, Nanchang hi tech Zone, Jiangxi Co-patentee before: Nanchang University Patentee before: NANCHANG HUANGLYU LIGHTING Co.,Ltd. |