CN102956768A - Luminescent device comprising sapphire combined substrate - Google Patents
Luminescent device comprising sapphire combined substrate Download PDFInfo
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- CN102956768A CN102956768A CN2012104181346A CN201210418134A CN102956768A CN 102956768 A CN102956768 A CN 102956768A CN 2012104181346 A CN2012104181346 A CN 2012104181346A CN 201210418134 A CN201210418134 A CN 201210418134A CN 102956768 A CN102956768 A CN 102956768A
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- aluminium nitride
- combined substrate
- luminescent device
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- sapphire
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Abstract
The invention discloses a luminescent device comprising a sapphire combined substrate, which comprises the combined substrate, wherein the combined substrate comprises sapphires, wherein a non-crystal aluminium nitride layer is arranged on the sapphires, the thickness of the non-crystal aluminium nitride layer is optimally 300-900nm, a single crystal aluminium nitride thin film is arranged on the non-crystal aluminium nitride layer, and comprises a plurality of array elements which are periodically arranged, the thickness of the single crystal aluminium nitride thin film is 20-40nm, the dimension of each array element is 300*300nm<2>-1000*1000nm<2>, and the interval between the adjacent array elements is optimally 80-400nm. The combined substrate disclosed by the invention has the characteristics that the processing is convenient, and the cost is low. Simultaneously, the grown GaN epitaxial layer is very low in dislocation density, so that a GaN epitaxial layer with larger thickness can be grown at a large area.
Description
Technical field
The present invention relates to a kind of luminescent device, relate in particular to a kind of luminescent device that comprises combined substrate.
Background technology
In recent years, people have carried out large quantity research to GaN base electron device and the photoelectric device that comprises light-emitting diode (LED), laser diode (LD) and each transistorlike, have obtained a lot of achievements.Compare with the similar device that adopts the material manufacturings such as GaAs or InP, because broad-band gap, high breakdown field and the high saturated velocity lamp advantage of GaN, the GaN base electron device provides outstanding high voltage, high power, high-temperature and high frequencies of operation.For metal oxide field-effect transistor (MOSFET), metal insulator field-effect transistor (MISFET), bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT) constant power device, they have utilized the broad-band gap of GaN, high breakdown field, high thermal conductivity and high electron mobility, have obtained outstanding device performance.
But, also do not have at present the single crystalline substrate of suitable GaN epitaxial growth of large scale, the production in enormous quantities of industrialization growth, the GaN material can only epitaxial growth on mismatch substrate.At present, most of GaN based semiconductor light emitting materials all are to adopt sapphire, SiC or Si as substrate, because above-mentioned substrate and GaN lattice mismatch are larger, and thermal coefficient of expansion is also different, cause producing a large amount of dislocation defects at the GaN of above-mentioned Grown epitaxial loayer and substrate, form the non-radiative recombination center of semiconductive luminescent materials; Simultaneously, because the effect of stress has also limited thickness and the area of GaN epitaxial loayer, thereby device performance is caused very big impact, reduced the luminous efficiency of light-emitting diode or laser diode, reduced the life-span.
When sapphire, SiC or Si substrate form the GaN based semiconductor device, need to carry out the heteroepitaxial growth of GaN and AlGaN, in order to regulate the lattice mismatch between GaN and the substrate and to keep the epitaxial relationship of relative substrate, conventional method is before the growing GaN epitaxial loayer, grow first on the substrate low temperature AI N or GaN resilient coating.But the substrate with low temperature buffer layer has a lot of significantly limitation for making LED, LD and other device.For example can't form vertical device structure, waste the space on the wafer; In addition, even larger lattice mismatch between substrate and the GaN so that adopted low temperature buffer layer, in this device or can produce the very high defect concentration of degree, causes the reduction of performance of devices, productive rate and reliability.
Therefore, this area wishes to find a kind of mode, can be on sapphire, SiC or Si substrate the lower GaN sill of large tracts of land epitaxial growth defect concentration, make the semiconductor device that performance is good, the life-span is long.
Summary of the invention
In order to overcome defective of the prior art, the invention provides a kind of luminescent device that comprises the sapphire combined substrate, it comprises combined substrate easy to process, as can to reduce dislocation density and large area deposition GaN epitaxial loayer.
The luminescent device of sapphire combined substrate that comprises of the present invention comprises combined substrate, and this combined substrate comprises:
Sapphire;
At sapphire one deck amorphous aln layer is arranged, the thickness of amorphous aln layer is preferably 300～900nm, more preferably 400～600nm;
At the amorphous aln layer one deck monocrystalline aluminium nitride film is arranged, the monocrystalline aluminium nitride film comprises the array element of a plurality of periodic arrangement, and the thickness of monocrystalline aluminium nitride film is preferably 20～40nm, and each array element is preferably dimensioned to be 300 * 300nm
2～1000 * 1000nm
2, 400 * 400nm more preferably
2～500 * 500nm
2, the interval between each array element is preferably 80～400nm, more preferably 150～250nm.
Luminescent device can be light-emitting diode or laser diode.
Combined substrate of the present invention namely can be used for direct growth GaN epitaxial loayer, thereby makes luminescent device.The present invention is etched into several array elements small-sized and periodic arrangement by photoetching process with the monocrystalline aluminium nitride film on the amorphous aln layer, because amorphous silicon nitride layer has good extensibility, can alleviate effectively that lattice does not mate caused stress between substrate and the GaN epitaxial loayer; In addition, owing to the size of the monocrystalline aluminium nitride array element that is used for the growing GaN epitaxial loayer is little and very thin, can reduce the contact area with the GaN epitaxial loayer, avoid formed stress on the bulk silicon film, and monocrystalline aluminium nitride film array element can be submitted to the lattice variations of GaN, after the GaN that grows on the monocrystalline aluminium nitride film array element reaches certain thickness, can be to lateral growth around the array element, the GaN that grows on the film unit the most at last couples together, and forms the growth pattern that is similar to take the GaN monocrystalline as substrate.
Therefore, combined substrate of the present invention has characteristics easy to process, with low cost.The GaN epitaxial loayer Dislocations density of growth is very low simultaneously, but the GaN epitaxial loayer of the larger thickness of large area deposition.
Embodiment
In order to make those skilled in the art more clearly understand the sapphire combined substrate that comprises of the present invention, describe its technical scheme in detail below by embodiment.
Luminescent device of the present invention comprises combined substrate.
This combined substrate comprises three-decker, is respectively sapphire, amorphous aln layer and monocrystalline aluminium nitride film.Wherein
Sapphire is identical with the conventional sapphire that uses of preparation luminescent device in this area, repeats no more herein.
At sapphire one deck amorphous aln layer is arranged, the thickness of amorphous aln layer is preferably 300～900nm, more preferably 400～600nm.Because amorphous silicon nitride layer has good extensibility, so this amorphous aln layer can alleviate effectively that lattice does not mate caused stress between substrate and the GaN epitaxial loayer, thus raising device stability and life-span.
At the amorphous aln layer one deck monocrystalline aluminium nitride film is arranged, the monocrystalline aluminium nitride film comprises the array element of a plurality of periodic arrangement, and the thickness of monocrystalline aluminium nitride film is preferably 20～40nm.
Each monocrystalline aluminium nitride film array element is preferably dimensioned to be 300 * 300nm
2～1000 * 1000nm
2, 400 * 400nm more preferably
2～500 * 500nm
2
Interval between each monocrystalline aluminium nitride film array element is preferably 80～400nm, more preferably 150～250nm.In addition, the interval of monocrystalline aluminium nitride film array element is wanted the growing GaN epitaxy layer thickness as good to be less than or equal to.Namely can be used for direct growth GaN epitaxial loayer in combined substrate of the present invention, thereby make luminescent device.Owing to by photoetching process very thin monocrystalline aluminium nitride film is etched into several array elements small-sized and periodic arrangement, thereby can reduce the contact area with the GaN epitaxial loayer, avoid formed stress on the bulk silicon film, and monocrystalline aluminium nitride film array element can be submitted to the lattice variations of GaN, after the GaN that grows on the monocrystalline aluminium nitride film array element reaches certain thickness, can be to lateral growth around the array element, the GaN that grows on the film unit the most at last couples together, and forms the growth pattern that is similar to take the GaN monocrystalline as substrate.
Therefore, combined substrate of the present invention has characteristics easy to process, with low cost.The GaN epitaxial loayer Dislocations density of growth is very low simultaneously, but the GaN epitaxial loayer of the larger thickness of large area deposition.
Luminescent device of the present invention can be light-emitting diode or laser diode.
In addition, combined substrate of the present invention also can be for the manufacture of other GaN base power device, such as various transistors etc.
Only for thought of the present invention and characteristics are described, it is not intended to limit the present invention above embodiment, and those skilled in the art can make various modification or combination to it according to disclosed spirit, still include in protection scope of the present invention.
Claims (5)
1. a luminescent device that comprises the sapphire combined substrate comprises combined substrate, it is characterized in that,
This combined substrate comprises:
Sapphire;
At sapphire one deck amorphous aln layer is arranged, the thickness of amorphous aln layer is preferably 300～900nm;
At the amorphous aln layer one deck monocrystalline aluminium nitride film is arranged, the monocrystalline aluminium nitride film comprises the array element of a plurality of periodic arrangement, and the thickness of monocrystalline aluminium nitride film is preferably 20～40nm, and each array element is preferably dimensioned to be 300 * 300nm
2～1000 * 1000nm
2, the interval between each array element is preferably 80～400nm.
2. luminescent device as claimed in claim 1 is characterized in that, the thickness of described amorphous aln layer is preferably 400～600nm.
3. luminescent device as claimed in claim 1 is characterized in that, described each array element is preferably dimensioned to be 400 * 400nm
2～500 * 500nm
2
4. luminescent device as claimed in claim 1 is characterized in that, the interval between described each array element is preferably 150～250nm.
5. luminescent device as claimed in claim 1 is characterized in that, described luminescent device is light-emitting diode or laser diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2012104181346A CN102956768A (en) | 2012-10-26 | 2012-10-26 | Luminescent device comprising sapphire combined substrate |
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| CN2012104181346A CN102956768A (en) | 2012-10-26 | 2012-10-26 | Luminescent device comprising sapphire combined substrate |
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| CN102956768A true CN102956768A (en) | 2013-03-06 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983239A (en) * | 2012-11-07 | 2013-03-20 | 江苏威纳德照明科技有限公司 | Sapphire combined substrate used for manufacturing luminescent device |
| CN108878595A (en) * | 2017-05-08 | 2018-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Substrate, semiconductor devices and substrate preparation method |
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| CN1369904A (en) * | 2001-02-14 | 2002-09-18 | 西安电子科技大学 | Heteroepitavy technology for growing silicon carbide film on sapphire substrate |
| CN1622285A (en) * | 2004-12-13 | 2005-06-01 | 中国科学院上海技术物理研究所 | Composite substrate for epitaxy growth of gallium nitride |
| CN1795538A (en) * | 2003-05-30 | 2006-06-28 | S.O.I探测硅绝缘技术公司 | Substrate for stressed systems and method for growing crystal on the substrate |
| CN101114584A (en) * | 2006-07-27 | 2008-01-30 | 中国科学院半导体研究所 | Method for epitaxy InAlGaN monocrystal film using MBE |
| CN101494244A (en) * | 2009-03-04 | 2009-07-29 | 中国科学院上海技术物理研究所 | Back irradiation plane type PIN structure GaN-based ultraviolet detector and preparation method |
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2012
- 2012-10-26 CN CN2012104181346A patent/CN102956768A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1369904A (en) * | 2001-02-14 | 2002-09-18 | 西安电子科技大学 | Heteroepitavy technology for growing silicon carbide film on sapphire substrate |
| CN1795538A (en) * | 2003-05-30 | 2006-06-28 | S.O.I探测硅绝缘技术公司 | Substrate for stressed systems and method for growing crystal on the substrate |
| CN1622285A (en) * | 2004-12-13 | 2005-06-01 | 中国科学院上海技术物理研究所 | Composite substrate for epitaxy growth of gallium nitride |
| CN101114584A (en) * | 2006-07-27 | 2008-01-30 | 中国科学院半导体研究所 | Method for epitaxy InAlGaN monocrystal film using MBE |
| CN101494244A (en) * | 2009-03-04 | 2009-07-29 | 中国科学院上海技术物理研究所 | Back irradiation plane type PIN structure GaN-based ultraviolet detector and preparation method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983239A (en) * | 2012-11-07 | 2013-03-20 | 江苏威纳德照明科技有限公司 | Sapphire combined substrate used for manufacturing luminescent device |
| CN108878595A (en) * | 2017-05-08 | 2018-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Substrate, semiconductor devices and substrate preparation method |
| CN108878595B (en) * | 2017-05-08 | 2020-02-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | Substrate, semiconductor device and substrate manufacturing method |
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Application publication date: 20130306 |