CN103400913B - A kind of rectangular graph silicon substrate for growing six side phase GaN - Google Patents
A kind of rectangular graph silicon substrate for growing six side phase GaN Download PDFInfo
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- CN103400913B CN103400913B CN201310306334.7A CN201310306334A CN103400913B CN 103400913 B CN103400913 B CN 103400913B CN 201310306334 A CN201310306334 A CN 201310306334A CN 103400913 B CN103400913 B CN 103400913B
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Abstract
The invention discloses a kind of rectangular graph silicon substrate for growing six side phase GaN, comprise silicon (111) face substrate bulk, strip isolation strip is processed with at silicon substrate body upper surface, strip isolation strip is by mutually vertical, vertical isolation strip that width is identical and horizontal isolation strip are formed, silicon substrate body is divided into multiple rectangle growth platform, has it is characterized in that: orthohexagonal arbitrary cornerwise angle that on arbitrary angular bisector of rectangle growth platform and silicon (111) face, the atom pair of Hexagonal array is answered is in the scope of 0 ~ 5 °.The traverse furrow groove formed after six side's phase GaN growth be ensure that to the restriction of above-mentioned angular range and the width of longitudinal furrow groove basically identical.This provides powerful guarantee for the crystal mass of epitaxial loayer and the reliability of follow-up chip processing procedure, also thoroughly solve in existing rectangular graph silicon substrate technology, the uncertainty in rectangle growth platform direction affects the problem of GaN crystal quality and chip yield, reliability.
Description
Technical field
The present invention relates to the growth technology of semi-conducting material, particularly relating to a kind of rectangular graph silicon substrate for growing six side phase GaN.
background technology:
The third generation semi-conducting material that to take GaN as III/V nitride semi-conductor material of representative be after silicon and GaAs, obtains develop rapidly in recent years.III/V nitride comprises GaN, AlN, InN, InGaN and AlGaN etc., it has the direct band gap of 1.9 ~ 6.2eV continuous variable, cover from ultraviolet to far emission wavelength, and there is the excellent feature such as physics, chemical stability, high saturated electrons mobility, obtain a wide range of applications in the opto-electronic device of blue, green and ultraviolet band, particularly in blue, green light LED.
Because GaN monocrystalline is difficult to obtain, the epitaxial growth of GaN is many to be carried out in foreign substrate.Except the most frequently used sapphire (c face) substrate and 6H-SiC substrate, silicon (111) face substrate is also by extensive concern in recent years.Silicon substrate have low price, size larger, be easy to peel off, conduction, thermal conductivity compare advantages of higher, and the processing technology of silicon materials and integrated technology are quite ripe, make silicon substrate GaN-based LED have the potential advantages being easy to large-scale integrated.But there is between Si and GaN huge lattice mismatch and thermal mismatching, this can introduce huge stress in growth course, causes obtaining high-quality GaN base LED film on a silicon substrate very difficult.
At present, industry has the difficult problem that Duo Jia unit solves silicon substrate epitaxial growth high-quality GaN base LED film, and has high-caliber silicon substrate GaN-based LED product to release.Multiple regularly arranged independently rectangle growth platform (i.e. rectangular graph silicon substrate) is wherein divided into by whole silicon substrate to be one of current mainstream technology route, there is the independently rectangle growth platform that silicon substrate is divided into multiple equally distributed shape size identical by many orthogonal strip isolation strip, described isolation strip can be protruding also can be depression, GaN material can not on described isolation strip direct growth, and described isolation with certain width to ensure that the epitaxial loayer in each growth platform does not connect with the epitaxial loayer on neighbours growth platform, thus between each growth platform described, define the traverse furrow groove and longitudinal furrow groove that there is no GaN growth, described groove effectively can discharge silicon substrate and epitaxial loayer in heteroepitaxial growth process due to huge stress that lattice mismatch and thermal mismatching are introduced, greatly reduce the crackle in described epitaxial loayer, reduce dislocation density, thus obtain high-quality GaN base LED thin-film material.
But existing rectangular graph silicon substrate technology, does not consider that the crystal orientation of the boundary line of rectangle growth platform relative to silicon (111) face is on the impact of six side's phase GaN epitaxy growths on it.The surface of described rectangle growth platform is silicon (111) face, if its boundary line is unreasonable relative to the crystal orientation design in silicon (111) face, the described traverse furrow groove that formed in GaN growth process will be caused different with the width of longitudinal furrow groove, the unequal power distribution of epitaxial loayer, crack growth, dislocation density increases, and crystal mass declines, and brings larger harmful effect also can to the yield of follow-up chip processing procedure and reliability.Why producing the problems referred to above, is because described boundary line decides atomic arrangement situation along boundary line relative to the crystal orientation in silicon (111) face, and six side phase GaN depend on the atomic arrangement situation along boundary line along the lateral growth speed of boundary line.Six side's phase GaN growth faces are (0001) face, equally with the atom in silicon (111) face arranges in orthohexagonal, GaN along each angle of orthohexagonal direction growth rate comparatively fast, along the direction on regular hexagon limit, then growth rate is slower.Rectangle growth platform has four edges boundary line parallel between two, and wherein adjacent edge boundary line is mutually vertical, correspond to orthogonal crystal orientation.If described adjacent edge boundary line is unreasonable relative to the crystal orientation design in silicon (111) face, then make the atomic arrangement situation difference along adjacent edge boundary line larger, thus cause GaN then different along the lateral growth speed in adjacent edge boundary line, one side that growth rate is fast, the groove formed is narrower, one side that growth rate is slow, the groove of formation is wider.
summary of the invention:
The object of the present invention is to provide a kind of rectangular graph silicon substrate for growing six side phase GaN, it can make the width of longitudinal furrow groove and traverse furrow groove basically identical, thus provide powerful guarantee for the crystal mass of epitaxial loayer and the reliability of follow-up chip processing procedure, also thoroughly solve in existing rectangular graph silicon substrate technology, the uncertainty in rectangle growth platform direction affects the problem of GaN crystal quality and chip yield, reliability.
The object of the present invention is achieved like this:
A kind of rectangular graph silicon substrate for growing six side phase GaN, comprise silicon (111) face substrate bulk, strip isolation strip is processed with at the upper surface (silicon (111) face) of silicon (111) face substrate bulk, strip isolation strip is by mutually vertical, vertical isolation strip that width is identical and horizontal isolation strip are formed, the upper surface of silicon substrate body has been divided into multiple rectangle growth platform by strip isolation strip, it is characterized in that:
Orthohexagonal arbitrary cornerwise angle that on arbitrary angular bisector of rectangle growth platform and its surface and silicon (111) face, the atom pair of Hexagonal array is answered is in the scope of 0 ~ 5 °.
Industry adopts usually (110) face is as the main reference plane of silicon (111) face substrate, and main flat limit is in the position of <1-10>, then above-mentioned geometrical relationship can be described as: arbitrary boundary line and the angle on main flat limit of rectangle growth platform are one in 10 ~ 20 °, 40 ~ 50 ° or 70 ~ 80 °.
The length of side of rectangle growth platform is in the scope of 0.1mm ~ 5mm.
The width of strip isolation strip is greater than 2um.
Due to can not direct growth GaN on strip isolation strip, thus along with the growth of GaN, in strip isolation strip, place can form the groove not having GaN growth, but has certain lateral growth speed due to GaN, and the width of groove is less than the width of strip isolation strip usually.Corresponding with vertical isolation strip and horizontal isolation strip, groove is also divided into longitudinal furrow groove and traverse furrow groove.
The scope of orthohexagonal arbitrary cornerwise angle that the present invention is answered with the atom pair of Hexagonal array on its surface and silicon (111) face by the diagonal limiting rectangle growth platform limits arbitrary boundary line of described rectangle growth platform in other words and leads the angular range of flat limit <1-10>, determine the boundary line of rectangle growth platform and the relative crystal orientation of silicon (111) face substrate, the i.e. boundary line of rectangle growth platform and Si(111) position relationship of atomic arrangement on face, thus can ensure along the atomic arrangement near two adjacent edge boundary lines of rectangle growth platform basically identical, make GaN substantially identical along the lateral growth speed in adjacent edge boundary line, therefore the width of described longitudinal furrow groove and traverse furrow groove can be made basically identical, this provides powerful guarantee for the crystal mass of epitaxial loayer and the reliability of follow-up chip processing procedure, also thoroughly solve in existing rectangular graph silicon substrate technology, the uncertainty in rectangle growth platform direction affects GaN crystal quality and chip yield, the problem of reliability.
accompanying drawing illustrates:
Fig. 1 is the schematic top plan view of rectangular graph silicon substrate of the present invention;
Fig. 2 is the relative position relation schematic diagram of atomic arrangement structure on the boundary line of rectangle growth platform of the present invention and silicon (111) face.
Fig. 3 is the schematic top plan view after Grown six side phase GaN film provided by the invention.
embodiment:
Contrast accompanying drawing below in conjunction with embodiment method of the present invention is further detailed.
A kind of rectangular graph silicon substrate for growing six side phase GaN, comprise silicon substrate body 1, strip isolation strip 2 is processed with at the upper surface (silicon (111) face) 5 of silicon (111) face substrate bulk 1, strip isolation strip 2 is by mutually vertical, the vertical isolation strip 3 that width is identical and horizontal isolation strip 4 are formed, the upper surface of silicon (111) face substrate bulk 1 has been divided into multiple rectangle growth platform 5 by strip isolation strip 2, orthohexagonal arbitrary cornerwise angle α that on arbitrary angular bisector of rectangle growth platform 5 and silicon (111) face, the atom pair of Hexagonal array is answered is 0 ~ 5 °.
Arbitrary boundary line and the angle α of main flat limit <1-10>6 of rectangle growth platform 5 are one in 10 ~ 20 °, 40 ~ 50 ° or 70 ~ 80 °.
The length of side m of rectangle growth platform 5 is 0.1mm ~ 5mm.
The width d of strip isolation strip 2 is greater than 2um.
Due to can not direct growth GaN on strip isolation strip, thus along with the growth of GaN, in strip isolation strip 2, place can form the groove not having GaN growth, but has certain lateral growth speed due to GaN, and the width of groove is less than the width of strip isolation strip usually.Corresponding with vertical isolation strip 3 and horizontal isolation strip 4, groove is also divided into longitudinal furrow groove 7 and traverse furrow groove 8.
When orthohexagonal arbitrary cornerwise angle α that the atom pair of Hexagonal array on arbitrary angular bisector and silicon (111) face of rectangle growth platform 5 is answered is 0 ~ 5 °, the longitudinal furrow groove 7 formed after GaN growth and the width of traverse furrow groove 8 basically identical.This provides powerful guarantee for the crystal mass of epitaxial loayer and the reliability of follow-up chip processing procedure, also thoroughly solve in existing rectangular graph silicon substrate technology, the uncertainty in rectangle growth platform direction affects the problem of GaN crystal quality and chip yield, reliability.
Claims (2)
1. one kind for growing the rectangular graph silicon substrate of six side phase GaN, comprise silicon (111) face substrate bulk, strip isolation strip is processed with at the upper surface (silicon (111) face) of silicon (111) face substrate bulk, strip isolation strip is by mutually vertical, the vertical isolation strip that width is identical and horizontal isolation strip are formed, the upper surface of silicon substrate body has been divided into multiple rectangle growth platform by strip isolation strip, it is characterized in that: the angle α of the flat limit <1-10> of master of arbitrary boundary line of rectangle growth platform and silicon (111) face substrate bulk is 10 ~ 20 °, any one in 40 ~ 50 ° or 70 ~ 80 °.
2. rectangular graph silicon substrate according to claim 1, is characterized in that: the length of side of rectangle growth platform is 0.1mm ~ 5mm.
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| CN103746051A (en) * | 2013-12-04 | 2014-04-23 | 南昌大学 | Silicon substrate having edge isolation structure |
| CN103824854B (en) * | 2014-02-22 | 2016-09-28 | 石以瑄 | Switched circuit based on HEMT and microwave integrated circuit |
| CN107123715A (en) * | 2017-04-28 | 2017-09-01 | 海迪科（南通）光电科技有限公司 | A kind of positive tetragonal patterned substrate |
| CN107910244B (en) * | 2017-11-01 | 2020-05-22 | 大连芯冠科技有限公司 | Epitaxial method for growing gallium nitride by using silicon patterned substrate |
| TWI718506B (en) * | 2019-03-25 | 2021-02-11 | 世界先進積體電路股份有限公司 | Semiconducotr structure and method for fabricating the same |
| CN111785609B (en) * | 2019-04-04 | 2023-06-23 | 世界先进积体电路股份有限公司 | Semiconductor structure and manufacturing method thereof |
| CN113838952B (en) * | 2021-09-06 | 2023-10-27 | 厦门乾照半导体科技有限公司 | Nano-LED application-based epitaxial structure, chip and preparation method |
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Address after: Annex building 2, engineering technology research center, No. 679, aixihu North Road, Nanchang high tech Industrial Development Zone, Nanchang City, Jiangxi Province Co-patentee after: Nanchang University Patentee after: NANCHANG GUIJI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 330047 No. seven, No. 192, hi tech Zone, Nanchang hi tech Zone, Jiangxi Co-patentee before: Nanchang University Patentee before: NANCHANG HUANGLYU LIGHTING Co.,Ltd. |