CN103862584A - Squaring process and application of monocrystal silicon round bar for solar cells - Google Patents
Squaring process and application of monocrystal silicon round bar for solar cells Download PDFInfo
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- CN103862584A CN103862584A CN201410133850.9A CN201410133850A CN103862584A CN 103862584 A CN103862584 A CN 103862584A CN 201410133850 A CN201410133850 A CN 201410133850A CN 103862584 A CN103862584 A CN 103862584A
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Abstract
The invention discloses a squaring process of a monocrystal silicon round bar for solar cells. The squaring process comprises the steps that the circumferential radian between a ridge line of the silicon bar and a ridge line of an adjacent crystal support is adjusted to be 2pi/9-5pi/18, and then the monocrystal silicon round bar is squared. The invention further provides a production process of a monocrystal silicon solar cell. The production process comprises the steps of preparation of monocrystal silicon cutting pieces, surface texturing and printing of electrode grid lines. The monocrystal silicon cutting pieces are quasi square silicon slices formed by wire-electrode cutting of cutting pieces by a monocrystal silicon square bar, and the monocrystal silicon square bar is obtained by the monocrystal silicon round bar through the squaring process, and the printed electrode grid lines are parallel to or perpendicular to the edges of the quasi square silicon slices. According to the squaring process of the monocrystal silicon round bar, four monocrystal silicon square bars with the lateral crystal orientations being <110> +/-5 degrees can be obtained, then four monocrystal silicon cutting pieces with the edge crystal orientations being <110> +/- 5 degrees are obtained, the bottom edge of a texturing face pyramid structure formed by conventional texturing of the monocrystal silicon slices can be used for transmitting photoproduction electrons, and route extending of the photoproduction electrons can not happen on the bottom edge of the pyramid structure.
Description
Technical field
The present invention relates to the evolution technique of monocrystalline silicon round rod used for solar batteries, and apply the monocrystaline silicon solar cell sheet production technology of this evolution technique.
Background technology
Solar cell mainly adopts the monocrystalline silicon round rod in Grown by CZ Method <100> crystal orientation as raw material with monocrystalline silicon piece at present, first the crystalline substance holder crest line in brilliant to the silicon rod crest line on monocrystalline silicon round rod (growth crest line) and excavation machine holder is alignd one by one, again to monocrystalline silicon round rod evolution, pole is cut into the accurate square cylinder (single crystal silicon square rods) that cross section is four jiaos of band circular arcs, then pass through spheronizator emery wheel round as a ball, make the inhomogeneous square rod blank of original growth potential obtain the size of homogeneous, carrying out line cutting with this square rod cuts into slices, can obtain the monocrystalline silicon piece for the production of battery.According to national standard " monocrystalline silicon cutting blade used for solar batteries " (standard No.: GB/T 26071-2010), crystal orientation, four edges of this kind of silicon chip is <100> ± 2 °.
This conventional monocrystalline silicon piece is carried out after alkali making herbs into wool, can form pyramid shape (positive rectangular pyramid) suede structure at silicon chip surface, the base of pyramid structure and silicon chip edge be into about 45 degree angles, and the gate electrode line also printing with routine is into about 45 degree angles.(gate electrode line of conventional printing is parallel with silicon chip edge or vertical.) this relative position makes the transmission range that light induced electron need to be longer in the time that silicon chip surface transmits could arrive grid line place, caused the prolongation of transmission range.
Summary of the invention
The object of the present invention is to provide the evolution technique of monocrystalline silicon round rod used for solar batteries, and apply the monocrystaline silicon solar cell sheet production technology of this evolution technique, it is <100> ± 3 ° that evolution technique of the present invention can obtain end face crystal orientation, crystal orientation, four sides is the single crystal silicon square rods of <110> ± 5 °, and then be <100> ± 3 ° by this conventional means of single crystal silicon square rods line cutting section is obtained to surface orientation, crystal orientation, four edges is the accurate square silicon wafer of <110> ± 5 °, the a pair of base of the matte pyramid structure forming after the conventional making herbs into wool of this accurate square silicon wafer is substantially vertical with silicon chip edge, also just substantially vertical with the gate electrode line of routine printing, this can be used for transmitting light induced electron to pyramid structure base, and can not make light induced electron on this pyramid structure base, produce path extends, with respect to prior art, shorten the transmission range of light induced electron at silicon chip surface, improve the absorption quantity of gate electrode line at the raw electronics of unit interval interior focusing, effectively improve the collection efficiency of electronics, and then raising battery conversion efficiency, in the situation that not affecting battery conversion efficiency, can also relatively reduce moire grids density, and then reduce costs.
For achieving the above object, the invention provides the evolution technique of monocrystalline silicon round rod used for solar batteries, in described monocrystalline silicon round rod evolution process, first (adjust monocrystalline silicon round rod and the brilliant circumferential position holding in the palm) the circumferential radian between silicon rod crest line and phase vincial faces holder crest line is adjusted into 2 π/18, π/9～5, by monocrystalline silicon round rod evolution, make single crystal silicon square rods again; The crystal orientation of described monocrystalline silicon round rod is <100> ± 3 °.(the growth crest line that described silicon rod crest line is monocrystalline silicon round rod; Described brilliant holder crest line is the upper crest line for aiming at one by one with silicon rod crest line arranging of the brilliant holder of excavation machine.）
Preferably, the evolution technique of described monocrystalline silicon round rod used for solar batteries comprises the steps:
1) monocrystalline silicon round rod is vertically placed in the brilliant holder of excavation machine;
2) the crystalline substance holder crest line of the brilliant holder of the silicon rod crest line of monocrystalline silicon round rod and excavation machine is aimed at one by one, then monocrystalline silicon round rod rotate to 2 π/18, π/9～5 relative to brilliant holder, then with viscose, monocrystalline silicon round rod is bonded in to excavation machine is brilliant to be held in the palm;
3) crystalline substance holder is fixed on excavation machine workbench, starts excavation machine monocrystalline silicon round rod is cut into single crystal silicon square rods.
Preferably, described silicon rod crest line and the circumferential radian between phase vincial faces holder crest line are adjusted into π/4.
Preferably, the evolution technique of described monocrystalline silicon round rod used for solar batteries comprises the steps:
1) monocrystalline silicon round rod is vertically placed in the brilliant holder of excavation machine;
2) mark line of the brilliant holder of the silicon rod crest line of monocrystalline silicon round rod and excavation machine is aimed at one by one, then monocrystalline silicon round rod is bonded in the brilliant holder of excavation machine with viscose; Described mark line is positioned on the outer peripheral face of brilliant holder, and arranges with crystalline substance holder crest line interval; Described mark line is parallel with two that are adjacent brilliant holder crest lines, and equates with the spacing of these two phase vincial faces holder crest lines;
3) crystalline substance holder is fixed on excavation machine workbench, starts excavation machine monocrystalline silicon round rod is cut into single crystal silicon square rods.
Preferably, described monocrystalline silicon round rod is the silicon single crystal rod in the <100> crystal orientation that forms of Grown by CZ Method.
The present invention also provides the production technology of monocrystaline silicon solar cell sheet, comprise the printing of preparation, surface wool manufacturing and the gate electrode line of monocrystalline silicon cutting blade, described monocrystalline silicon cutting blade is the accurate square silicon wafer being formed by single crystal silicon square rods line cutting section, and described single crystal silicon square rods is made by above-mentioned evolution technique by monocrystalline silicon round rod; The gate electrode line of described printing is parallel or vertical with accurate square silicon wafer edge.(described surface wool manufacturing is for having the matte of pyramid structure at accurate square silicon wafer Surface Creation.）
As everyone knows, light induced electron arrives after silicon chip surface, collected by gate electrode line, in the process of advancing to gate electrode line along silicon chip surface at light induced electron, may run into the pyramid structure of silicon chip surface, and advance along surface and/or the edge of this pyramid structure, and then cross this pyramid structure.Obviously, no matter this pyramid structure is the positive pyramid structure of silicon chip surface projection, or the inverted pyramid structure of silicon chip surface depression, light induced electron is in the time crossing these pyramid structures, compared to advancing in plane, generally all can relatively extend the travel distance that arrives gate electrode line.The path causing in order to reduce light induced electron to be subject to crossing pyramid structure extends, and a kind of feasible way is to allow light induced electron have an opportunity to advance on pyramid structure base, and light induced electron is advanced in plane exactly like this.But another problem that need to consider is that, when light induced electron is advanced in plane, while only having its direct of travel and gate electrode line basic vertical, light induced electron is just in the shortest path towards gate electrode line; Other paths all can exist compared with wide-angle because of its path direction and gate electrode line, and become longer compared to above-mentioned shortest path.Therefore the path causing in order to reduce light induced electron to be subject to crossing pyramid structure extends, and is allowing light induced electron have an opportunity in advancing in pyramid structure base, also will take into full account the relative position relation of pyramid structure base and gate electrode line.And in prior art, be subject to the thought binding of common process, those skilled in the art had not both had purpose to go research and had adjusted light induced electron in the time that silicon chip surface is advanced, to be subject to pyramid structure to affect caused path to extend, do not have purpose go research and adjust the pros and cons that light induced electron is advanced along pyramid structure base, more do not have purpose to remove the relative position relation of research and adjustment pyramid structure base and gate electrode line yet.
Common process gained single crystal silicon square rods, crystal orientation, four sides is <100>, it is <100> that this single crystal silicon square rods is cut to the crystal orientation, four edges that this conventional means of section obtains monocrystalline silicon piece by line, this silicon chip is carried out after conventional making herbs into wool, base and the silicon chip edge of the pyramid structure forming at silicon chip surface be into about 45 degree angles, and the gate electrode line also printing with routine is into about 45 degree angles.(gate electrode line of conventional printing is parallel with silicon chip edge or vertical.) technique gained single crystal silicon square rods of the present invention, end face crystal orientation is <100> ± 3 °, crystal orientation, four sides is <110> ± 5, single crystal silicon square rods of the present invention cuts this conventional means of section by line and obtains accurate square silicon wafer, <110> ± 5 °, crystal orientation, four edges, but not traditional <100>, this silicon chip carries out after conventional making herbs into wool (alkali making herbs into wool), the base of each pyramid structure becomes 0-10 degree angle or 80-90 degree angle with silicon chip edge, also just become 0-10 degree angle or 80-90 degree angle with the gate electrode line of routine printing, be to have one group of opposite side substantially vertical with gate electrode line in four limits, each pyramid structure bottom surface.
In four limits, the each pyramid structure of the present invention bottom surface, there is one group of opposite side substantially vertical with gate electrode line, when light induced electron process pyramid structure, just there is more multimachine to advance along the pyramid structure base substantially vertical with gate electrode line, light induced electron is when plane is advanced, also on the shortest path towards gate electrode line like this.And in prior art the base of pyramid structure and gate electrode line into about 45 degree angles, when light induced electron process pyramid structure, generally all to cross up and down these pyramid structures, advance in plane compared to light induced electron, relatively extend the travel distance that arrives gate electrode line; And because the base of pyramid structure in prior art and gate electrode line are into about 45 degree angles, the base of these pyramid structures also cannot form the shortest path that plane is advanced.
In sum, the present invention has creatively adjusted the relative position relation of pyramid structure base and conventional electrodes grid line, makes light induced electron have the more multimachine can be along the pyramid structure base substantially vertical with gate electrode line---this does not need the shortest path of crossing pyramid structure to advance.Compared with prior art, the present invention can effectively utilize pyramid structure base to transmit light induced electron, and can not make light induced electron on this pyramid structure base, produce path extends, objectively shorten the actual transmissions distance that light induced electron arrives gate electrode line, thereby improve the collection efficiency of gate electrode line to light induced electron, be conducive to further improve battery efficiency.
In addition, the present invention, by adjusting the relative position relation of pyramid structure base and gate electrode line, has also just adjusted the relative position relation of each pyramid structure and gate electrode line on the whole.With regard to the general impacts of path---the general impacts of described path refer to: need to cross pyramidal all light induced electrons, generally due to the path of crossing pyramid and being extended.Path of the present invention general impacts are much smaller than prior art, therefore with respect to prior art, the present invention has shortened the actual transmissions distance of light induced electron arrival gate electrode line especially on the whole, has further improved the collection efficiency of gate electrode line to light induced electron, also is more conducive to improve battery efficiency.
And, can also shorten light induced electron in the present invention and arrive on the basis of actual transmissions distance of gate electrode line, the grid line structure design of more optimizing, as can be, in the situation that not affecting battery conversion efficiency, reduced moire grids density, and then reduces grid line cost.
Accompanying drawing explanation
Fig. 1 is silicon single crystal rod schematic diagram;
Fig. 2 is the brilliant holder of excavation machine schematic diagram;
Fig. 3 is the brilliant holder of excavation machine schematic cross-section.
The specific embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is further described.Following examples are only for technical scheme of the present invention is more clearly described, and can not limit the scope of the invention with this.
The concrete technical scheme of implementing of the present invention is:
The invention provides the evolution technique of monocrystalline silicon round rod used for solar batteries, in described monocrystalline silicon round rod evolution process, first (adjust monocrystalline silicon round rod and the brilliant circumferential position holding in the palm) the circumferential radian between silicon rod crest line and phase vincial faces holder crest line is adjusted into 2 π/18, π/9～5, by monocrystalline silicon round rod evolution, make single crystal silicon square rods again; Described monocrystalline silicon round rod is the silicon single crystal rod in ° (being preferably <100>) crystal orientation, <100> ± 3 of forming of Grown by CZ Method.(the growth crest line that described silicon rod crest line is monocrystalline silicon round rod; Described brilliant holder crest line is the upper crest line for aiming at one by one with silicon rod crest line arranging of the brilliant holder of excavation machine.）
Adjust the circumferential radian between silicon rod crest line and phase vincial faces holder crest line and can realize by several different methods monocrystalline silicon round rod evolution.
One is can system of selection as follows:
(1) monocrystalline silicon round rod in Fig. 12 is vertically placed in the brilliant holder 4 of Fig. 2 excavation machine;
(2) the silicon rod crest line 1 of monocrystalline silicon round rod 2 is aimed at one by one with the crystalline substance holder crest line 3 of the brilliant holder 4 of excavation machine, again monocrystalline silicon round rod 2 rotate to 2 π/9～5 π/18(relative to brilliant holder 4 and is preferably π/4), then with viscose, monocrystalline silicon round rod 2 is bonded in to excavation machine is brilliant to be held in the palm on 4;
(3) crystalline substance holder 4 is fixed on excavation machine workbench, adds magnetic, start excavation machine monocrystalline silicon round rod is cut into single crystal silicon square rods.
Another kind is can system of selection as follows: (described silicon rod crest line and the circumferential radian between phase vincial faces holder crest line are adjusted into π/4)
(1) monocrystalline silicon round rod in Fig. 12 is vertically placed in the brilliant holder 4 of Fig. 2 excavation machine;
(2) mark line 5 of the brilliant holder 4 of the silicon rod crest line 1 of monocrystalline silicon round rod 2 and excavation machine is aimed at one by one, then with viscose, monocrystalline silicon round rod 2 is bonded in to excavation machine is brilliant to be held in the palm on 4; As shown in Figure 2 and Figure 3, described mark line 5 is positioned on the outer peripheral face of brilliant holder 4, and arranges with crystalline substance holder crest line 3 spaces; Described mark line 5 is parallel with two that are adjacent brilliant holder crest lines 3, and equates with the spacing of these two phase vincial faces holder crest lines 3;
(3) crystalline substance holder 4 is fixed on excavation machine workbench, adds magnetic, start excavation machine monocrystalline silicon round rod is cut into single crystal silicon square rods.
The single crystal silicon square rods that above-mentioned monocrystalline silicon round rod evolution makes, end face crystal orientation is <100> ± 3 °, crystal orientation, four sides is <110> ± 5 °.
The present invention also provides the production technology of monocrystaline silicon solar cell sheet, comprise the printing of preparation, surface wool manufacturing and the gate electrode line of monocrystalline silicon cutting blade, described monocrystalline silicon cutting blade is the accurate square silicon wafer being formed by single crystal silicon square rods line cutting section, and described single crystal silicon square rods is made by above-mentioned evolution technique by monocrystalline silicon round rod; The gate electrode line of described printing is parallel or vertical with accurate square silicon wafer edge.(described surface wool manufacturing is for having the matte of pyramid structure at accurate square silicon wafer Surface Creation.）
The above-mentioned accurate square silicon wafer (monocrystalline silicon cutting blade) being formed by single crystal silicon square rods line cutting section, surface orientation is <100> ± 3 °, and crystal orientation, four edges is <110> ± 5 °.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, do not departing under the prerequisite of the technology of the present invention principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. the evolution technique of monocrystalline silicon round rod used for solar batteries, it is characterized in that, in described monocrystalline silicon round rod evolution process, first silicon rod crest line and the circumferential radian between phase vincial faces holder crest line are adjusted into 2 π/18, π/9～5, by monocrystalline silicon round rod evolution, make single crystal silicon square rods again; The crystal orientation of described monocrystalline silicon round rod is <100> ± 3 °.
2. the evolution technique of monocrystalline silicon round rod used for solar batteries according to claim 1, is characterized in that, comprises the steps:
1) monocrystalline silicon round rod is vertically placed in the brilliant holder of excavation machine;
2) the crystalline substance holder crest line of the brilliant holder of the silicon rod crest line of monocrystalline silicon round rod and excavation machine is aimed at one by one, then monocrystalline silicon round rod rotate to 2 π/18, π/9～5 relative to brilliant holder, then with viscose, monocrystalline silicon round rod is bonded in to excavation machine is brilliant to be held in the palm;
3) crystalline substance holder is fixed on excavation machine workbench, starts excavation machine monocrystalline silicon round rod is cut into single crystal silicon square rods.
3. the evolution technique of monocrystalline silicon round rod used for solar batteries according to claim 1, is characterized in that, described silicon rod crest line and the circumferential radian between phase vincial faces holder crest line are adjusted into π/4.
4. the evolution technique of monocrystalline silicon round rod used for solar batteries according to claim 3, is characterized in that, comprises the steps:
1) monocrystalline silicon round rod is vertically placed in the brilliant holder of excavation machine;
2) mark line of the brilliant holder of the silicon rod crest line of monocrystalline silicon round rod and excavation machine is aimed at one by one, then monocrystalline silicon round rod is bonded in the brilliant holder of excavation machine with viscose; Described mark line is positioned on the outer peripheral face of brilliant holder, and arranges with crystalline substance holder crest line interval; Described mark line is parallel with two that are adjacent brilliant holder crest lines, and equates with the spacing of these two phase vincial faces holder crest lines;
3) crystalline substance holder is fixed on excavation machine workbench, starts excavation machine monocrystalline silicon round rod is cut into single crystal silicon square rods.
5. the evolution technique of monocrystalline silicon round rod used for solar batteries according to claim 1, is characterized in that, described monocrystalline silicon round rod is the silicon single crystal rod in the <100> crystal orientation that forms of Grown by CZ Method.
6. the production technology of a monocrystaline silicon solar cell sheet, comprise the printing of preparation, surface wool manufacturing and the gate electrode line of monocrystalline silicon cutting blade, described monocrystalline silicon cutting blade is the accurate square silicon wafer being formed by single crystal silicon square rods line cutting section, it is characterized in that, described single crystal silicon square rods is made by any one evolution technique in claim 1-5 by monocrystalline silicon round rod; The gate electrode line of described printing is parallel or vertical with accurate square silicon wafer edge.
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