CN112519013A - Novel single crystal round bar cutting method - Google Patents
Novel single crystal round bar cutting method Download PDFInfo
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- CN112519013A CN112519013A CN202011143473.9A CN202011143473A CN112519013A CN 112519013 A CN112519013 A CN 112519013A CN 202011143473 A CN202011143473 A CN 202011143473A CN 112519013 A CN112519013 A CN 112519013A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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Abstract
The invention relates to the technical field of clean energy solar photovoltaic single crystal rods and semiconductor single crystal square rods, in particular to a novel single crystal round rod cutting method. The method comprises the following steps of cutting a positioning end face A; determining a beveling angle according to the relation between the size of the prefabricated silicon wafer and the diameter of the single crystal round rod; cutting off two end angles of the single crystal round rod by using a diamond wire according to the beveling angle; cutting from one end of the single crystal round rod according to a beveling angle to form a round single crystal silicon wafer; removing redundant corners of the round silicon wafer; and cleaning, measuring and inspecting the cut monocrystalline silicon wafer to obtain a finished product. The optimal beveling angle is calculated by the single wafer rod according to the size requirement of the silicon wafer and the diameter size relation of the round rod, and then beveling is carried out, so that the material utilization rate and the effective total area of the silicon wafer are obviously improved.
Description
Technical Field
The invention relates to the technical field of clean energy solar photovoltaic single crystal rods and semiconductor single crystal square rods, in particular to a novel single crystal round rod cutting method.
Background
As the demand for clean energy increases, solar photovoltaic power generation also increases. Reducing carbon emissions during the manufacturing process to increase conversion efficiency is a mission for many photovoltaic enterprises. The realization of large-size silicon chip is imminent in the monocrystalline silicon round rod diamond wire slicing link of photovoltaic power generation.
However, in the monocrystalline silicon round rod cutting process in the prior art, the effective utilization rate of the monocrystalline silicon round rod is low, the effective utilization area of the prepared monocrystalline silicon wafer is small, and no good solution exists at present.
Disclosure of Invention
The invention provides a novel method for cutting a single crystal round rod, which solves the technical problems of low effective utilization rate of the single crystal round rod and small area of a cut single crystal silicon wafer in the existing cutting method.
In order to achieve the above object, the present invention provides a method for cutting a single crystal round bar, comprising the steps of cutting a positioning end surface a;
determining a beveling angle according to the relation between the size of the prefabricated silicon wafer and the diameter of the single crystal round rod;
cutting off two end angles of the single crystal round rod by using a diamond wire according to the beveling angle;
cutting from one end of the single crystal round rod according to a beveling angle to form a round single crystal silicon wafer;
removing redundant corners of the round silicon wafer;
and cleaning, measuring and inspecting the cut monocrystalline silicon wafer to obtain a finished product.
Further, the maximum area of the monocrystalline silicon wafer formed after cutting at the beveling angle is larger than or equal to the area of the silicon wafer.
Further, the diamond wire is cut to a rotation angle or a fixed angle.
Further, the single crystal silicon wafer may have rounded corners or chamfered corners.
Compared with the prior art, the invention has the beneficial effects that: the optimal beveling angle is calculated by the single wafer rod according to the size requirement of the silicon wafer and the size relation of the diameter of the round rod, beveling is carried out, so that the material utilization rate is obviously improved, although 2-end oblique angle materials are cut off, compared with the plane cutting method in the prior art, the effective total area of the silicon wafer is obviously increased, the effective total area of the silicon wafer is increased by 27.9 percent, the effective utilization rate of the silicon rod is improved by 18 percent, and the effective area and the utilization rate of the silicon wafer are obviously improved by taking the single wafer rod with the length of 4000mm and the diameter of 256mm as an example for carrying out beveling at 26 degrees.
Drawings
FIG. 1 is a schematic view showing the cutting of a single-crystal round bar according to the present invention.
FIG. 2 is a schematic cut view of a single crystal round bar according to the present invention.
FIG. 3 is a schematic diagram of end face cutting of a single crystal round bar according to the present invention.
1. An end corner; 2. slicing monocrystalline silicon; s: a beveled end face; θ: a chamfer angle; l, the length of the single crystal round rod; s1, 26-degree chamfer angle; s2, a chamfer angle of 45 degrees; A. positioning the end face;
and the diameter of the single crystal round rod.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "first" and "second," and the like, in the description and in the claims of embodiments of the present invention are used for distinguishing between different objects and not for describing a particular order of the objects. For example, the first parameter set and the second parameter set, etc. are used to distinguish different parameter sets, rather than to describe a particular order of parameter sets.
In the description of the embodiments of the present invention, the meaning of "a plurality" means two or more unless otherwise specified. For example, a plurality of elements refers to two elements or more.
The term "and/or" herein is an association relationship describing an associated object, and means that there may be three relationships, for example, a display panel and/or a backlight, which may mean: there are three cases of a display panel alone, a display panel and a backlight at the same time, and a backlight alone. The symbol "/" herein denotes a relationship in which the associated object is or, for example, input/output denotes input or output.
In the embodiments of the present invention, words such as "exemplary" or "for example" are used to mean serving as examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "e.g.," an embodiment of the present invention is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, use of the word "exemplary" or "such as" is intended to present concepts related in a concrete fashion.
A method for cutting a single crystal round bar comprises the following steps of cutting and positioning an end face A; determining a beveling angle according to the relation between the size of the prefabricated silicon wafer and the diameter of the single crystal round rod; then fixing the positioning end face A of the round single crystal rod to prevent rotation, and cutting off two end angles of the round single crystal rod by using a diamond wire according to a beveling angle; cutting from one end of the single crystal round rod according to a beveling angle to form a round single crystal silicon wafer; removing redundant corners of the round silicon wafer; and cleaning, measuring and inspecting the cut monocrystalline silicon wafer to obtain a finished product.
The optimal beveling angle is calculated by the single wafer rod according to the size requirement of the silicon wafer and the size relation of the diameter of the round rod, and beveling is performed, so that the material utilization rate is remarkably improved, although 2-end oblique angle materials are cut, compared with the plane cutting method in the prior art, the total effective area of the silicon wafer is remarkably increased in the whole cutting area, and the technical problems that the effective utilization rate of the single wafer rod is low and the area of the cut single wafer is small in the existing cutting method are solved.
Further, the maximum area of the monocrystalline silicon wafer formed after cutting at the beveling angle is larger than or equal to the area of the silicon wafer.
Further, the diamond wire is cut to a rotation angle or a fixed angle.
Further, the single crystal silicon wafer may have rounded corners or chamfered corners.
Example 1, as shown in FIGS. 1, 2 and 3, first LGeneral assemblyLength 4000mm diameter
Cutting the round monocrystalline silicon round rod with the depth of 15mm, fixing the round monocrystalline silicon round rod through the positioning end surface A, determining that the optimal beveling angle is 26 degrees according to the size relation between the diameter of the round monocrystalline silicon rod and a prefabricated chip, cutting two S inclined end surfaces according to the optimal angle of 26 degrees → cutting the cylindrical monocrystalline rodCutting a section L along an oblique end face parallel to SSegment of800mm → monocrystalline silicon round rod LSegment ofBonding and fixing the wafer carrier with the thickness of 800mm on the wafer carrier equipment along a preset optimal angle of 26 degrees → carrying out diamond wire multi-line round silicon wafer cutting → cutting the well-cut wafer
The round silicon wafer is placed into a laser cutting machine which automatically finds the center, redundant parts are removed, 190-190 square silicon wafers are formed → the cut single crystal silicon wafers are cleaned, measured and inspected.
Additionally mixing LGeneral assemblyLength 4000mm diameter
Cutting the round monocrystalline silicon round rod with the depth of 15mm, fixing the round monocrystalline silicon round rod through the positioning end surface A, determining the beveling angle to be 45 degrees according to the size relation between the diameter of the monocrystalline silicon round rod and the prefabricated chip, cutting two S inclined end surfaces according to the optimal angle of 45 degrees → cutting the cylindrical monocrystalline rod into a section L parallel to the S inclined end surfacesSegment of800mm → monocrystalline silicon round rod LSegment ofBonding and fixing the wafer carrier with the thickness of 800mm on wafer carrier equipment along a preset angle of 45 degrees → carrying out diamond wire multi-line round silicon wafer cutting → cutting the well-cut wafer
The round silicon wafer is placed into a laser cutting machine which automatically finds the center, redundant parts are removed, 190-190 square silicon wafers are formed → the cut single crystal silicon wafers are cleaned, measured and inspected.
Table 1 below shows the length 4000 and diameter for this application
Cutting test data of the round single crystal silicon round rod of (1).
| ∠° | Short- | Long- | ○mm2 | □h | □w | □mm2 | ↑+ | |
| 0 | 256 | 256 | 51446 | 168 | 168 | 28224 | 0.0％ | |
| S1 | 26 | 256 | 284.8 | 57252 | 190 | 190 | 36100 | 27.9％ |
| S2 | 45 | 256 | 362 | 72771 | 190 | 243 | 46170 | 63.6％ |
Wherein ≈ represents a chamfer angle, and short ≈ represents a short axis length; long o indicates the long axis length; o mm2Representing the area of the circular silicon slice after cutting; □ h represents the length of the rectangle after cutting, □ W represents the width of the rectangle after cutting, □ mm2Showing the sum of the cross-sectional areas of the silicon wafers after cutting and forming, and ↓ + showing the percentage increase of the area of the silicon wafers compared with the area of the silicon wafers by the original plane cutting method.
According to the silicon slice cut at the original non-inclined angle, the size of the silicon slice cut at the original non-inclined angle is only 168, and the calculation is carried out to compare with the size 190 of the silicon slice cut at the existing rotation angle, and the conclusion is reached:
after the silicon rod is obliquely cut by 26 degrees, the area of the silicon rod is increased by ↓27.9 percent compared with the area of the original plane cut silicon wafer, the waste material of the oblique cutting end is reduced, and the effective utilization rate of the silicon rod is improved by ℃ 18 percent.
After the silicon rod is obliquely cut at an angle of 45 degrees, the area of the silicon rod is increased by ↓.63.6 percent compared with the area of the original plane cut silicon wafer.
The optimal beveling angle is calculated by a single wafer rod according to the size requirement of the silicon wafer and the diameter size relation of the round rod, and beveling is performed, so that the material utilization rate is remarkably improved, although 2-end oblique angle materials are cut off, compared with a plane cutting method in the prior art, the effective total area of the silicon wafer is remarkably increased, the obtained silicon wafer obtains an oblique angle edge, a bonding surface with a larger surface area can be obtained in the utilization process, and butt joint fixation is facilitated.
Illustratively, according to the requirement of a prefabricated silicon wafer, the silicon wafer after beveling can be square or rectangular, and compared with a plane cutting method in the prior art, the silicon wafer has the advantages that the effective total area of the silicon wafer is remarkably increased and the effective utilization rate of a silicon rod is greatly improved after calculation.
Exemplarily, in the process of cutting and preparing the silicon wafer, a fillet or a chamfer can be left at the corner of the silicon wafer, and the original arc-shaped structure is utilized according to the structural characteristics of the original circular silicon rod, so that part of the original fillet is reserved after the silicon wafer is cut, and the effective utilization area of the silicon wafer is further increased.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (4)
1. A method for cutting a single crystal round bar is characterized by comprising the following steps: comprises the following steps of (a) carrying out,
cutting the positioning end face A;
determining a beveling angle according to the relation between the size of the prefabricated silicon wafer and the diameter of the single crystal round rod;
cutting off two end angles of the single crystal round rod by using a diamond wire according to the beveling angle;
cutting from one end of the single crystal round rod according to a beveling angle to form a round single crystal silicon wafer;
removing redundant corners of the round silicon wafer;
and cleaning, measuring and inspecting the cut monocrystalline silicon wafer to obtain a finished product.
2. A method for cutting a single crystal round bar according to claim 1, characterized in that: the maximum area of the monocrystalline silicon wafer formed after cutting at the beveling angle is larger than or equal to the area of the silicon wafer.
3. A method for cutting a single crystal round bar according to claim 1, characterized in that: the diamond wire is cut at a rotation angle or a fixed angle.
4. A method for cutting a single crystal round bar according to claim 1, characterized in that: the monocrystalline silicon wafer may be rounded or chamfered.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011143473.9A CN112519013A (en) | 2020-10-23 | 2020-10-23 | Novel single crystal round bar cutting method |
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| CN202011143473.9A CN112519013A (en) | 2020-10-23 | 2020-10-23 | Novel single crystal round bar cutting method |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232428A (en) * | 1992-06-30 | 1994-08-19 | Siemens Solar Ind Internatl Inc | Photoelectromotive wafer of uniform dimension and manufacture thereof |
| JPH09254005A (en) * | 1996-03-15 | 1997-09-30 | Nippei Toyama Corp | Wire saw |
| KR20020030988A (en) * | 2000-10-20 | 2002-04-26 | 이 창 세 | Method for cropping a single crystal ingot and slicing wafer using thereof |
| CN102581970A (en) * | 2012-03-06 | 2012-07-18 | 英利能源（中国）有限公司 | Adjusting device for crystalline silicon block for solar battery component and cutting method |
| CN102825666A (en) * | 2012-08-16 | 2012-12-19 | 保定天威英利新能源有限公司 | Adhesion method for correcting size of polycrystalline silicon block |
| CN103862584A (en) * | 2014-04-04 | 2014-06-18 | 常州时创能源科技有限公司 | Squaring process and application of monocrystal silicon round bar for solar cells |
| CN104400919A (en) * | 2014-10-16 | 2015-03-11 | 天威新能源控股有限公司 | Manner for beveling silicon block of small size |
| CN110216801A (en) * | 2019-07-09 | 2019-09-10 | 南通友拓新能源科技有限公司 | A kind of method for cutting silicon chips of size adjustable |
-
2020
- 2020-10-23 CN CN202011143473.9A patent/CN112519013A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232428A (en) * | 1992-06-30 | 1994-08-19 | Siemens Solar Ind Internatl Inc | Photoelectromotive wafer of uniform dimension and manufacture thereof |
| JPH09254005A (en) * | 1996-03-15 | 1997-09-30 | Nippei Toyama Corp | Wire saw |
| KR20020030988A (en) * | 2000-10-20 | 2002-04-26 | 이 창 세 | Method for cropping a single crystal ingot and slicing wafer using thereof |
| CN102581970A (en) * | 2012-03-06 | 2012-07-18 | 英利能源（中国）有限公司 | Adjusting device for crystalline silicon block for solar battery component and cutting method |
| CN102825666A (en) * | 2012-08-16 | 2012-12-19 | 保定天威英利新能源有限公司 | Adhesion method for correcting size of polycrystalline silicon block |
| CN103862584A (en) * | 2014-04-04 | 2014-06-18 | 常州时创能源科技有限公司 | Squaring process and application of monocrystal silicon round bar for solar cells |
| CN104400919A (en) * | 2014-10-16 | 2015-03-11 | 天威新能源控股有限公司 | Manner for beveling silicon block of small size |
| CN110216801A (en) * | 2019-07-09 | 2019-09-10 | 南通友拓新能源科技有限公司 | A kind of method for cutting silicon chips of size adjustable |
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