CN103872157B - Monocrystal silicon cuts sheet and uses the solar battery sheet of this cutting sheet - Google Patents

Monocrystal silicon cuts sheet and uses the solar battery sheet of this cutting sheet Download PDF

Info

Publication number
CN103872157B
CN103872157B CN201410134001.5A CN201410134001A CN103872157B CN 103872157 B CN103872157 B CN 103872157B CN 201410134001 A CN201410134001 A CN 201410134001A CN 103872157 B CN103872157 B CN 103872157B
Authority
CN
China
Prior art keywords
silicon
sheet
gate electrode
pyramid structure
electrode line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410134001.5A
Other languages
Chinese (zh)
Other versions
CN103872157A (en
Inventor
符黎明
陈培良
孙霞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changzhou Shichuang Energy Co Ltd
Original Assignee
Changzhou Shichuang Energy Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Shichuang Energy Technology Co Ltd filed Critical Changzhou Shichuang Energy Technology Co Ltd
Priority to CN201410134001.5A priority Critical patent/CN103872157B/en
Publication of CN103872157A publication Critical patent/CN103872157A/en
Application granted granted Critical
Publication of CN103872157B publication Critical patent/CN103872157B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The invention discloses a kind of monocrystal silicon used for solar batteries cutting sheet, for the quasi-square silicon wafer of monocrystalline silicon crystal bar cutting, its surface orientation is<100>± 3 °, and crystal orientation, four edges is<110>± 5 °.The present invention also provides for one monocrystaline silicon solar cell sheet, cuts sheet including gate electrode line and above-mentioned monocrystal silicon, and this monocrystal silicon cutting sheet forms the matte with pyramid structure by making herbs into wool, and described gate electrode line cuts the sides aligned parallel or vertical of sheet with monocrystal silicon.A pair base of the matte pyramid structure formed after monocrystal silicon of the present invention cutting sheet making herbs into wool is substantially vertical with silicon chip edge, just the most substantially vertical with the gate electrode line of routine printing, pyramid structure base can be used for transmitting light induced electron by this, and light induced electron will not be made to produce path prolongation on this pyramid structure base, relative to prior art, shorten the light induced electron transmission range at silicon chip surface, be effectively improved the collection efficiency of electronics, and then improve battery conversion efficiency.

Description

Monocrystal silicon cuts sheet and uses the solar battery sheet of this cutting sheet
Technical field
The present invention relates to technical field of solar batteries, be specifically related to a kind of monocrystal silicon used for solar batteries cutting sheet and use the solar battery sheet of this cutting sheet.
Background technology
Solar cell monocrystalline silicon piece mainly uses the pole in Grown by CZ Method < 100 > crystal orientation at present, through evolution, pole is cut into the quasi-square cylinder that cross section is corner band circular arc, it is then passed through spheronizator emery wheel round as a ball, the pole blank that original growth potential is uneven is made to obtain homogeneous size, carry out line cutting with this quasi-square rod, be i.e. available for producing the monocrystalline silicon piece of battery.According to national standard " monocrystal silicon cutting sheet used for solar batteries " (standard No.: GB/T 26071-2010), crystal orientation, four edges of this kind of silicon chip is<100>± 2 °.
After this conventional single silicon chip is carried out alkali making herbs into wool, can form pyramid shape (positive rectangular pyramid) suede structure at silicon chip surface, the base of pyramid structure becomes about 45 degree of angles with silicon chip edge, namely becomes about 45 degree of angles with the gate electrode line of routine printing.(gate electrode line of conventional printing is parallel with silicon chip edge or vertical.) this relative position makes light induced electron need longer transmission range to get at grid line when silicon chip surface transmits, and causes the prolongation of transmission range.
Summary of the invention
It is an object of the invention to provide a kind of monocrystal silicon used for solar batteries cutting sheet and use the solar battery sheet of this cutting sheet, a pair base of the matte pyramid structure formed after the cutting sheet routine making herbs into wool of this monocrystal silicon is substantially vertical with silicon chip edge, just the most substantially vertical with the gate electrode line of routine printing, pyramid structure base can be used for transmitting light induced electron by this, and light induced electron will not be made to produce path prolongation on this pyramid structure base, relative to prior art, shorten the light induced electron transmission range at silicon chip surface, it is effectively improved the collection efficiency of electronics, and then raising battery conversion efficiency;In the case of not affecting battery conversion efficiency, it is also possible to relatively reduce moire grids density, and then reduce cost.
For achieving the above object, the present invention provides a kind of monocrystal silicon used for solar batteries to cut sheet, and for the quasi-square silicon wafer of monocrystalline silicon crystal bar cutting, described quasi-square silicon wafer surface orientation is<100>± 3 °, and crystal orientation, four edges is<110>± 5 °.
Preferably, the perpendicularity on the described adjacent both sides of quasi-square silicon wafer is 90 ° ± 1 °.
Preferably, described monocrystalline silicon crystal bar is formed by Grown by CZ Method.
Preferably, the thickness of described quasi-square silicon wafer is 100~250 μm.
The present invention also provides for a kind of monocrystaline silicon solar cell sheet, sheet (quasi-square silicon wafer) is cut including gate electrode line and above-mentioned monocrystal silicon, and this monocrystal silicon cutting sheet (quasi-square silicon wafer) forms the matte with pyramid structure by making herbs into wool, described gate electrode line cuts the sides aligned parallel or vertical of sheet (quasi-square silicon wafer) with monocrystal silicon.
It is known that after light induced electron arrives silicon chip surface, collect gate electrode line, light induced electron along silicon chip surface to gate electrode line advance during, can be potentially encountered the pyramid structure of silicon chip surface, and advance along surface and/or the edge of this pyramid structure, and then cross this pyramid structure.Obviously, no matter this pyramid structure is positive pyramid structure protruding on silicon chip surface, or the inverted pyramid structure of depression on silicon chip surface, and light induced electron is when crossing these pyramid structures, advance compared in plane, the most all can relatively extend the travel distance arriving gate electrode line.The path caused by crossing pyramid structure to reduce light induced electron extends, and a kind of feasible way is to allow light induced electron have an opportunity on pyramid structure base advance, and such light induced electron is exactly to advance in plane.But another needs consideration is that, light induced electron is when plane is advanced, and when only its direct of travel is substantially vertical with gate electrode line, light induced electron is just in the shortest path towards gate electrode line;All can there is larger angle because of its path direction and gate electrode line in other paths, and become longer compared to above-mentioned shortest path.Therefore the path caused by crossing pyramid structure to reduce light induced electron extends, light induced electron is being allowed to have an opportunity while advancing in pyramid structure base, pyramid structure base to be taken into full account and the relative position relation of gate electrode line.And in prior art, thought binding by common process, those skilled in the art had not both had purpose to go research and adjustment light induced electron to be affected caused path when silicon chip surface is advanced by pyramid structure and extend, do not have purpose go research and adjust the pros and cons that light induced electron is advanced along pyramid structure base, more do not have purpose go research and adjust the relative position relation on pyramid structure base and gate electrode line yet.
The crystal orientation, edge of conventional monocrystal silicon cutting sheet (quasi-square silicon wafer) is<100>, after this silicon chip is carried out conventional making herbs into wool, becoming about 45 degree of angles on the base of the pyramid structure of silicon chip surface formation with silicon chip edge, also the gate electrode line with routine printing becomes about 45 degree of angles.(gate electrode line of conventional printing is parallel with silicon chip edge or vertical.) present invention provides and the monocrystal silicon used for solar batteries of use cuts sheet (quasi-square silicon wafer), crystal orientation, four edges<110>± 5 °, rather than traditional<100>, after this silicon chip carries out conventional making herbs into wool (alkali making herbs into wool), the base of each pyramid structure becomes 0-10 degree angle or 80-90 degree angle with silicon chip edge, the most just the gate electrode line with routine printing becomes 0-10 degree angle or 80-90 degree angle, has one group of opposite side substantially vertical with gate electrode line in limit, the most each pyramid structure bottom surface four.
Limit, the present invention each pyramid structure bottom surface four there is one group of opposite side substantially vertical with gate electrode line, light induced electron is through pyramid structure, more chance is just had to advance along the pyramid structure base substantially vertical with gate electrode line, so light induced electron is while plane is advanced, also on the shortest path of gate electrode line.And the base of pyramid structure becomes about 45 degree of angles with gate electrode line in prior art, light induced electron is through pyramid structure, typically will cross these pyramid structures up and down, advance in plane compared to light induced electron, relatively extend the travel distance arriving gate electrode line;And due in prior art the base of pyramid structure become about 45 degree of angles, the base of these pyramid structures also cannot constitute the shortest path that plane is advanced with gate electrode line.
In sum, the present invention creatively have adjusted the relative position relation on pyramid structure base and conventional electrodes grid line, make light induced electron have more chance along the pyramid structure base substantially vertical with gate electrode line this need not cross pyramid structure shortest path advance.Compared with prior art, the present invention can effectively utilize pyramid structure base to transmit light induced electron, and light induced electron will not be made to produce path prolongation on this pyramid structure base, objectively shorten light induced electron and arrive the actual transmissions distance of gate electrode line, thus improve the gate electrode line collection efficiency to light induced electron, be conducive to improving battery efficiency further.
It addition, the present invention is by adjusting the relative position relation on pyramid structure base and gate electrode line, have adjusted the relative position relation of each pyramid structure and gate electrode line the most on the whole.For the general impacts of path, the general impacts of described path refer to: need to cross pyramidal all light induced electrons, the path being extended owing to crossing pyramid generally, the path general impacts of the present invention are much smaller than prior art, compared with prior art, the present invention shortens light induced electron the most on the whole and arrives the actual transmissions distance of gate electrode line, further increase the gate electrode line collection efficiency to light induced electron, be more favorable to improve battery efficiency.
Moreover, it is also possible on the basis of the present invention shortens the actual transmissions distance that light induced electron arrives gate electrode line, the grid line structure design more optimized, as can be reduced moire grids density, and then reduce grid line cost in the case of not affecting battery conversion efficiency.
Accompanying drawing explanation
Fig. 1 is the schematic diagram (non-equal proportion) of monocrystal silicon used for solar batteries cutting sheet.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment, the detailed description of the invention of the present invention is further described.Following example are only used for clearly illustrating technical scheme, and can not limit the scope of the invention with this.
The technical scheme that the present invention is embodied as is:
As shown in Figure 1, the present invention provides a kind of monocrystal silicon used for solar batteries to cut sheet, for the quasi-square silicon wafer utilizing the monocrystalline silicon crystal bar of Grown by CZ Method to cut, described quasi-square silicon wafer surface orientation is<100>± 3 ° (preferably<100>), crystal orientation, four edges is<110>± 5 ° (preferably<110>), the perpendicularity on adjacent both sides is 90 ° ± 1 ° (preferably 90 °), and thickness is 100~250 μm (preferably 180 μm).
The present invention also provides for a kind of monocrystaline silicon solar cell sheet, sheet (quasi-square silicon wafer) is cut including gate electrode line and above-mentioned monocrystal silicon, and this monocrystal silicon cutting sheet (quasi-square silicon wafer) forms the matte with pyramid structure by making herbs into wool, described gate electrode line cuts the sides aligned parallel or vertical of sheet (quasi-square silicon wafer) with monocrystal silicon.
The above is only the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, on the premise of without departing from the technology of the present invention principle; can also make some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.

Claims (4)

  1. Monocrystal silicon the most used for solar batteries cutting sheet, for the quasi-square silicon wafer of monocrystalline silicon crystal bar cutting, it is characterised in that described quasi-square silicon wafer surface orientation is<100>± 3 °, and crystal orientation, four edges is<110>± 5 °;
    The perpendicularity on the described adjacent both sides of quasi-square silicon wafer is 90 ° ± 1 °.
  2. Monocrystal silicon used for solar batteries the most according to claim 1 cutting sheet, it is characterised in that described monocrystalline silicon crystal bar is formed by Grown by CZ Method.
  3. Monocrystal silicon used for solar batteries the most according to claim 2 cutting sheet, it is characterised in that the thickness of described quasi-square silicon wafer is 100~250 μm.
  4. 4. monocrystaline silicon solar cell sheet, it is characterized in that, cutting sheet including the monocrystal silicon according to any one of gate electrode line and claim 1-3, and this monocrystal silicon cutting sheet forms the matte with pyramid structure by making herbs into wool, described gate electrode line cuts the sides aligned parallel or vertical of sheet with monocrystal silicon.
CN201410134001.5A 2014-04-04 2014-04-04 Monocrystal silicon cuts sheet and uses the solar battery sheet of this cutting sheet Active CN103872157B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410134001.5A CN103872157B (en) 2014-04-04 2014-04-04 Monocrystal silicon cuts sheet and uses the solar battery sheet of this cutting sheet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410134001.5A CN103872157B (en) 2014-04-04 2014-04-04 Monocrystal silicon cuts sheet and uses the solar battery sheet of this cutting sheet

Publications (2)

Publication Number Publication Date
CN103872157A CN103872157A (en) 2014-06-18
CN103872157B true CN103872157B (en) 2016-09-28

Family

ID=50910500

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410134001.5A Active CN103872157B (en) 2014-04-04 2014-04-04 Monocrystal silicon cuts sheet and uses the solar battery sheet of this cutting sheet

Country Status (1)

Country Link
CN (1) CN103872157B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111223949A (en) * 2018-11-23 2020-06-02 成都晔凡科技有限公司 Single crystal battery piece cutting method, single crystal battery piece, photovoltaic module and preparation method
CN109968136B (en) * 2019-04-25 2023-08-18 内蒙古中环晶体材料有限公司 Polygonal monocrystalline silicon rod and processing method thereof
CN113571601B (en) * 2021-07-23 2023-05-12 常州时创能源股份有限公司 Method for improving battery slicing yield

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101866969A (en) * 2010-05-27 2010-10-20 友达光电股份有限公司 Solar cell

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617080A (en) * 1979-07-20 1981-02-18 Japan Solar Energ Kk Ribbon crystalline solar cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101866969A (en) * 2010-05-27 2010-10-20 友达光电股份有限公司 Solar cell

Also Published As

Publication number Publication date
CN103872157A (en) 2014-06-18

Similar Documents

Publication Publication Date Title
CN103862584B (en) The evolution technique of monocrystalline silicon round rod used for solar batteries and application
CN103872157B (en) Monocrystal silicon cuts sheet and uses the solar battery sheet of this cutting sheet
CN110137284A (en) Silicon wafer, cell piece, battery half, battery strings and photovoltaic module
CN203941915U (en) A kind of radial solar energy electrode grid line structure
CN207353262U (en) Crystal silicon solar batteries front electrode graphic structure
CN103928538B (en) Monocrystaline silicon solar cell sheet
CN104465876B (en) The manufacture method of polycrystalline silicon battery plate
CN202076275U (en) Crystalline silicon solar battery with selective emitter structure
CN201824485U (en) Slicing device for battery plates made from multi-crystal silicon ingots
CN102709377B (en) New-structure crystalline silicon solar battery and preparation method thereof
CN103171263A (en) Screen board used for printing of positive electrode of crystalline silicon solar cell
CN202528567U (en) Screen for printing positive electrode of crystalline silica solar cell
CN201490198U (en) Synthesized piece of crystalline silicon solar cell
CN107369727B (en) A kind of crystal silicon solar batteries piece
CN207602583U (en) The gate line electrode structure and solar cell of a kind of solar cell
CN202585475U (en) Long-service-life solar photovoltaic component
CN109755328A (en) A kind of solar battery slice arrangement mode and solar cell module
CN205985017U (en) High -efficient absorb light&#39;s monocrystalline silicon piece
CN205439551U (en) Solar cell is with printing half tone
CN204315593U (en) A kind of solar level monocrystalline silicon piece
CN203941916U (en) A kind of low shading rate solar battery sheet
CN202308003U (en) Series welding template of solar cell scribing component
CN104269447B (en) A kind of polysilicon solar cell plate
CN203250756U (en) Crystalline silicon solar cell sheet
CN104465815B (en) Polysilicon solar battery slice

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: Liyang City, Jiangsu province 213300 Li Cheng Zhen Wu Changzhou city Tandu Road No. 8

Patentee after: Changzhou Shichuang Energy Co., Ltd

Address before: 213300 Jiangsu city of Changzhou province Liyang Liyang Town of Wuhu Shanghai Road No. 168 building C

Patentee before: CHANGZHOU SHICHUANG ENERGY TECHNOLOGY Co.,Ltd.