CN103928538B - Monocrystaline silicon solar cell sheet - Google Patents
Monocrystaline silicon solar cell sheet Download PDFInfo
- Publication number
- CN103928538B CN103928538B CN201410133862.1A CN201410133862A CN103928538B CN 103928538 B CN103928538 B CN 103928538B CN 201410133862 A CN201410133862 A CN 201410133862A CN 103928538 B CN103928538 B CN 103928538B
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- Prior art keywords
- pyramid structure
- gate electrode
- electrode line
- line
- solar cell
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000002585 base Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 208000003443 Unconsciousness Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of monocrystaline silicon solar cell sheet, including having silicon chip and the gate electrode line of pyramid structure matte, on described gate electrode line, tangent line is 0 10 degree or 80 90 degree with the angle in the limit, bottom surface four of a certain pyramid structure everywhere.The monocrystaline silicon solar cell sheet that the present invention provides, can effectively utilize the base transmission light induced electron of silicon wafer suede pyramid structure, shorten the light induced electron transmission range at silicon chip surface, be effectively improved the collection efficiency of electronics, and then improve battery conversion efficiency；In the case of not affecting battery conversion efficiency, it is also possible to reduce moire grids density, and then reduce cost.
Description
Technical field
The present invention relates to technical field of solar batteries, be specifically related to the monocrystaline silicon solar cell sheet between a kind of gate electrode line and matte pyramid structure with certain positional relationship.
Background technology
Solaode produces photo-generated carrier under light illumination, and wherein light induced electron is transferred to gate electrode line by battery surface, and is collected by gate electrode line.It addition, in order to strengthen the silicon chip absorption to sunlight, need silicon chip surface is carried out making herbs into wool, after making herbs into wool, can have the matte of pyramid structure in silicon chip surface formation.Light induced electron along silicon chip surface to gate electrode line advance during, need to cross these pyramid structures.Therefore, silicon wafer suede microcosmic pyramid structure will directly affect the current collection efficiency of solaode with the relative position of macroscopic electrode grid line.In the conventional technology, this relative position relation of rare consideration.The problem so brought is, from the point of view of microcosmic, under many circumstances, electronics is not transferred on grid line by optimum approach, thus have impact on the collection efficiency of carrier in the case of unconscious.
Summary of the invention
It is an object of the invention to provide a kind of monocrystaline silicon solar cell sheet, it can effectively utilize the base transmission light induced electron of silicon wafer suede pyramid structure, and light induced electron will not be made to produce path prolongation on this pyramid structure (positive rectangular pyramid) base, shorten the light induced electron transmission range at silicon chip surface, it is effectively improved the collection efficiency of electronics, and then improves battery conversion efficiency；In the case of not affecting battery conversion efficiency, it is also possible to reduce moire grids density, and then reduce cost.
For achieving the above object, the technical scheme is that a kind of monocrystaline silicon solar cell sheet of design, including having silicon chip and the gate electrode line of pyramid structure matte, on described gate electrode line, tangent line is 0-10 degree or 80-90 degree with the angle in the limit, bottom surface four of a certain pyramid structure everywhere.
Preferably, on described gate electrode line, tangent line is parallel or vertical with limit, a certain pyramid structure bottom surface four everywhere.
Preferably, described pyramid structure is at the protruding positive pyramid structure of silicon chip surface or the inverted pyramid structure of depression.
Preferably, described gate electrode line is straight line, camber line or meander line.
Preferably, described gate electrode line is battery front side grid line or cell backside grid line.
It is known that after light induced electron arrives silicon chip surface, collect gate electrode line, light induced electron along silicon chip surface to gate electrode line advance during, can be potentially encountered the pyramid structure of silicon chip surface, and advance along surface and/or the edge of this pyramid structure, and then cross this pyramid structure.Obviously, no matter this pyramid structure is positive pyramid structure protruding on silicon chip surface, or the inverted pyramid structure of depression on silicon chip surface, and light induced electron is when crossing these pyramid structures, advance compared in plane, the most all can relatively extend the travel distance arriving gate electrode line.The path caused by crossing pyramid structure to reduce light induced electron extends, and a kind of feasible way is to allow light induced electron have an opportunity on pyramid structure base advance, and such light induced electron is exactly to advance in plane.But another needs consideration is that, light induced electron is when plane is advanced, and when only its direct of travel is substantially vertical with gate electrode line, light induced electron is just in the shortest path towards gate electrode line；All can there is larger angle because of its path direction and gate electrode line in other paths, and become longer compared to above-mentioned shortest path.Therefore the path caused by crossing pyramid structure to reduce light induced electron extends, light induced electron is being allowed to have an opportunity while advancing in pyramid structure base, pyramid structure base to be taken into full account and the relative position relation of gate electrode line.And in prior art, thought binding by common process, those skilled in the art had not both had purpose to go research and adjustment light induced electron to be affected caused path when silicon chip surface is advanced by pyramid structure and extend, do not have purpose go research and adjust the pros and cons that light induced electron is advanced along pyramid structure base, more do not have purpose go research and adjust the relative position relation on pyramid structure base and gate electrode line yet.
In prior art, after conventional single silicon chip is carried out alkali making herbs into wool, forming the matte with pyramid structure at silicon chip surface, the base of matte pyramid structure becomes about 45 degree of angles with silicon chip edge, and also the gate electrode line with routine printing becomes about 45 degree of angles.(gate electrode line of conventional printing is parallel with silicon chip edge or vertical.) monocrystaline silicon solar cell sheet of the present invention, on its gate electrode line, tangent line is 0-10 degree or 80-90 degree with the angle on one side in the limit, bottom surface four of a certain pyramid structure of matte everywhere, owing to the bottom surface of each pyramid structure of matte is all square, the base of each pyramid structure two-by-two one group be parallel to each other or vertically, therefore the present invention has one group of opposite side substantially vertical with gate electrode line in limit, each pyramid structure bottom surface four.
Limit, the present invention each pyramid structure bottom surface four there is one group of opposite side substantially vertical with gate electrode line, light induced electron is through pyramid structure, more chance is just had to advance along the pyramid structure base substantially vertical with gate electrode line, so light induced electron is while plane is advanced, also on the shortest path of gate electrode line.And the base of pyramid structure becomes about 45 degree of angles with gate electrode line in prior art, light induced electron is through pyramid structure, typically will cross these pyramid structures up and down, advance in plane compared to light induced electron, relatively extend the travel distance arriving gate electrode line；And due in prior art the base of pyramid structure become about 45 degree of angles, the base of these pyramid structures also cannot constitute the shortest path that plane is advanced with gate electrode line.
In sum, the present invention creatively have adjusted the relative position relation on pyramid structure base and gate electrode line, make light induced electron have more chance along the pyramid structure base substantially vertical with gate electrode line this need not cross pyramid structure shortest path advance.Compared with prior art, the present invention can effectively utilize pyramid structure base to transmit light induced electron, and light induced electron will not be made to produce path prolongation on this pyramid structure base, objectively shorten light induced electron and arrive the actual transmissions distance of gate electrode line, thus improve the gate electrode line collection efficiency to light induced electron, be conducive to improving battery efficiency further.
It addition, the present invention is by adjusting the relative position relation on pyramid structure base and gate electrode line, have adjusted the relative position relation of each pyramid structure and gate electrode line the most on the whole.For the general impacts of path, the general impacts of described path refer to: need to cross pyramidal all light induced electrons, the path being extended owing to crossing pyramid generally, the path general impacts of the present invention are much smaller than prior art, compared with prior art, the present invention shortens light induced electron the most on the whole and arrives the actual transmissions distance of gate electrode line, further increase the gate electrode line collection efficiency to light induced electron, be more favorable to improve battery efficiency.
Moreover, it is also possible on the basis of the present invention shortens the actual transmissions distance that light induced electron arrives gate electrode line, the grid line structure design more optimized, as can be reduced moire grids density, and then reduce grid line cost in the case of not affecting battery conversion efficiency.
Accompanying drawing explanation
Fig. 1 is the schematic diagram (non-equal proportion) of silicon chip surface of the prior art；
Fig. 2 is the schematic diagram (non-equal proportion) of the silicon chip surface of the embodiment of the present invention 1；
Fig. 3 is the schematic diagram (non-equal proportion) of the silicon chip surface of the embodiment of the present invention 2.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment, the detailed description of the invention of the present invention is further described.Following example are only used for clearly illustrating technical scheme, and can not limit the scope of the invention with this.
As it is shown in figure 1, in prior art, limit, pyramid structure bottom surface four insole binding 1,2 becomes about 45 degree of angles with silicon chip edge 3；Gate electrode line 4 and pyramid structure insole binding 1,2 one-tenth about 45 degree of angles, i.e. gate electrode line 4 is parallel with silicon chip edge 3.
The technical scheme that the present invention is embodied as is:
A kind of monocrystaline silicon solar cell sheet, including having the silicon chip of pyramid structure matte, and gate electrode line, on described gate electrode line, tangent line is 0-10 degree or 80-90 degree with the angle in the limit, bottom surface four of a certain pyramid structure everywhere.
Preferred embodiment is as follows:
Embodiment 1
As in figure 2 it is shown, limit, pyramid structure bottom surface four insole binding 1,2 becomes about 45 degree of angles with silicon chip edge 3；Gate electrode line 4 is parallel with one group of base 2 in limit, pyramid structure bottom surface four, vertical with another group base 1.Gate electrode line 4 is straight line.
Embodiment 2
As it is shown on figure 3, one group of base 1 is parallel with silicon chip edge 3 in limit, pyramid structure bottom surface four, another group base 2 is vertical with silicon chip edge 3；Gate electrode line 4 is parallel with one group of base 1 in limit, pyramid structure bottom surface four, and vertical with another group base 2, i.e. gate electrode line 4 is parallel with silicon chip edge 3.Gate electrode line 4 is straight line.
It can only be straight line that above example is not offered as gate electrode line, in fact in the present invention, gate electrode line can also be camber line or meander line, as long as tangent line is 0-10 degree or 80-90 degree with the angle in the limit, bottom surface four of a certain pyramid structure everywhere on gate electrode line.
The above is only the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, on the premise of without departing from the technology of the present invention principle; can also make some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (4)
1. monocrystaline silicon solar cell sheet, including silicon chip and the gate electrode line with pyramid structure matte, it is characterised in that on described gate electrode line, tangent line is 0-10 degree or 80-90 degree with the angle in the limit, bottom surface four of a certain pyramid structure everywhere；Described gate electrode line is camber line or meander line.
Monocrystaline silicon solar cell sheet the most according to claim 1, it is characterised in that on described gate electrode line, tangent line is parallel or vertical with limit, a certain pyramid structure bottom surface four everywhere.
Monocrystaline silicon solar cell sheet the most according to claim 1 and 2, it is characterised in that described pyramid structure is at the protruding positive pyramid structure of silicon chip surface or the inverted pyramid structure of depression.
Monocrystaline silicon solar cell sheet the most according to claim 3, it is characterised in that described gate electrode line is battery front side grid line or cell backside grid line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410133862.1A CN103928538B (en) | 2014-04-04 | 2014-04-04 | Monocrystaline silicon solar cell sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410133862.1A CN103928538B (en) | 2014-04-04 | 2014-04-04 | Monocrystaline silicon solar cell sheet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103928538A CN103928538A (en) | 2014-07-16 |
| CN103928538B true CN103928538B (en) | 2016-08-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410133862.1A Active CN103928538B (en) | 2014-04-04 | 2014-04-04 | Monocrystaline silicon solar cell sheet |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106364140B (en) * | 2016-10-25 | 2018-06-15 | 昆山良品丝印器材有限公司 | Solar energy crystalline silicon battery plate film structure and its printing screen plate |
| CN108615776B (en) * | 2018-04-26 | 2021-04-27 | 中国科学院物理研究所 | Anti-reflection surface structure and corresponding production method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202736932U (en) * | 2012-04-16 | 2013-02-13 | 英利能源（中国）有限公司 | N type solar module and N type solar cell sheet |
| CN103258900A (en) * | 2012-02-21 | 2013-08-21 | 上海超日太阳能科技股份有限公司 | Method for preparing N-type substrate microcrystalline silicon hetero-junction cell based on SE selective emitter junction |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011066300A1 (en) * | 2009-11-25 | 2011-06-03 | E. I. Du Pont De Nemours And Company | Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell |
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2014
- 2014-04-04 CN CN201410133862.1A patent/CN103928538B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258900A (en) * | 2012-02-21 | 2013-08-21 | 上海超日太阳能科技股份有限公司 | Method for preparing N-type substrate microcrystalline silicon hetero-junction cell based on SE selective emitter junction |
| CN202736932U (en) * | 2012-04-16 | 2013-02-13 | 英利能源（中国）有限公司 | N type solar module and N type solar cell sheet |
Non-Patent Citations (3)
| Title |
|---|
| 太阳能光伏发电技术的特点及其发展;吴福保;《电力与能源》;20110220;第1卷(第1期);全文 * |
| 硅太阳能电池背表面钝化研究;周国华;《江南大学硕士学位论文》;20090327;第5-6页、附图1-3、1－4 * |
| 背面点接触结构在晶体硅太阳电池中的应用;陶路平;《材料导报》;20110710;第25卷(第7期);全文 * |
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| CN103928538A (en) | 2014-07-16 |
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Address after: Liyang City, Jiangsu province 213300 Li Cheng Zhen Wu Changzhou city Tandu Road No. 8 Patentee after: Changzhou Shichuang Energy Co., Ltd Address before: 213300 Jiangsu city of Changzhou province Liyang Liyang Town of Wuhu Shanghai Road No. 168 building C Patentee before: CHANGZHOU SHICHUANG ENERGY TECHNOLOGY Co.,Ltd. |
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