CN106328730A - Solar cell with efficient light interception - Google Patents
Solar cell with efficient light interception Download PDFInfo
- Publication number
- CN106328730A CN106328730A CN201610976157.7A CN201610976157A CN106328730A CN 106328730 A CN106328730 A CN 106328730A CN 201610976157 A CN201610976157 A CN 201610976157A CN 106328730 A CN106328730 A CN 106328730A
- Authority
- CN
- China
- Prior art keywords
- negative electrode
- efficient light
- solaode
- light interception
- anelectrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 9
- 230000005611 electricity Effects 0.000 claims description 6
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a solar cell with efficient light interception. The solar cell comprises a silicon wafer, a positive electrode and a negative electrode, both the positive electrode and the negative electrode are arranged on the reverse side of the light interception surface of the silicon wafer, the negative electrode is of a metal disc, the positive electrode is of a ring concentrically arranged with the negative electrode and at least includes four main grids and secondary grids perpendicular to the main grids, the main grids are round metal wires, and at least four hollow-out grooves are arranged circumferentially along the main grids. By the above mode, maximum light interception area of the light interception surface can be achieved.
Description
Technical field
The present invention relates to photovoltaic art, particularly relate to the solaode of a kind of efficient light.
Background technology
In the case of current energy shortage, solaode, as a kind of Renewable resource, attracts wide attention.Separately
Outward, owing to solaode will not cause environmental pollution, therefore various places, solaode industry alive boundary are by big great pass
Note.
In the prior art, solar cell design is that front side of silicon wafer (sensitive surface) prints negative electrode, back face printing positive electricity
Pole, the electric current of the negative pole and positive pole that are respectively used to solaode is derived.Owing to negative electrode is printed on front side of silicon wafer, tie up and be subject to
The light-receiving area of bright finish, impacts the efficiency of solaode.
Summary of the invention
The technical problem that present invention mainly solves is to provide the solaode of a kind of efficient light, it is possible to make light mask
There is the light-receiving area of maximum.
For solving above-mentioned technical problem, the technical scheme that the present invention uses is: provide the sun of a kind of efficient light
Energy battery, is all located at described silicon chip sensitive surface including silicon chip, anelectrode and negative electrode, described anelectrode and described negative electrode relative
The back side, described negative electricity extremely metal disk, the annulus that described positive electricity is extremely arranged concentrically with described negative electrode, described anelectrode
Including at least four main grids and secondary grid vertically disposed with described main grid, described main grid is circular metal line, and described main grid edge
Circumference is provided with at least four hollow slots.
Wherein, the quantity of described secondary grid is at least 10.
Wherein, described hollow slots be shaped as rectangle or ellipse.
The invention has the beneficial effects as follows: be different from the situation of prior art, the solaode of the efficient light of the present invention
Anelectrode is all located at the back side that silicon chip sensitive surface is relative, owing to sensitive surface is without anelectrode such that it is able to make with negative electrode
Sensitive surface has the light-receiving area of maximum, can abundant light, raising energy conversion efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of the solaode of the efficient light of the embodiment of the present invention.
Fig. 2 is the structural representation of the anelectrode in Fig. 1.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
Seeing also Fig. 1 and Fig. 2, the solaode of the efficient light of the embodiment of the present invention includes silicon chip 1, anelectrode
2 and negative electrode 3, anelectrode 2 and negative electrode 3 be all located at the back side that silicon chip 1 sensitive surface is relative, negative electrode 3 is metal disk, positive electricity
Pole 2 is the annulus being arranged concentrically with negative electrode 3, and anelectrode 2 includes at least four main grids 21 and pair vertically disposed with main grid 21
Grid 22, main grid 21 is circular metal line, and main grid 21 is circumferentially provided with at least four hollow slots 211.Preferably, the number of secondary grid 22
Amount be at least 10, hollow slots 211 be shaped as rectangle or ellipse.In the present embodiment, hollow slots 211 be shaped as long
Square.
Owing to main grid 21 has multiple hollow slots 211, on the one hand, can significantly save metal pulp during electrode print
The usage amount of material, on the other hand, can keep or increase the conductive capability of the front electrode of solar battery of efficient light.
The foregoing is only embodiments of the invention, not thereby limit the scope of the claims of the present invention, every utilize this
Equivalent structure or equivalence flow process that bright description and accompanying drawing content are made convert, or are directly or indirectly used in other relevant skills
Art field, is the most in like manner included in the scope of patent protection of the present invention.
Claims (3)
1. the solaode of an efficient light, it is characterised in that include silicon chip, anelectrode and negative electrode, described anelectrode
All be located at the back side that described silicon chip sensitive surface is relative with described negative electrode, described negative electricity extremely metal disk, described positive electricity is extremely
The annulus being arranged concentrically with described negative electrode, described anelectrode includes at least four main grids and pair vertically disposed with described main grid
Grid, described main grid is circular metal line, and described main grid is circumferentially provided with at least four hollow slots.
The solaode of efficient light the most according to claim 1, it is characterised in that the quantity of described secondary grid is at least
10.
The solaode of efficient light the most according to claim 1, it is characterised in that being shaped as of described hollow slots is long
Square or oval.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610976157.7A CN106328730A (en) | 2016-11-07 | 2016-11-07 | Solar cell with efficient light interception |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610976157.7A CN106328730A (en) | 2016-11-07 | 2016-11-07 | Solar cell with efficient light interception |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106328730A true CN106328730A (en) | 2017-01-11 |
Family
ID=57816233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610976157.7A Pending CN106328730A (en) | 2016-11-07 | 2016-11-07 | Solar cell with efficient light interception |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106328730A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111742418A (en) * | 2018-02-23 | 2020-10-02 | 株式会社钟化 | Solar cell and electronic device provided with same |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201307598Y (en) * | 2008-11-10 | 2009-09-09 | 李毅 | Concentric circle amorphous silicon membrane solar battery |
| CN202142542U (en) * | 2011-06-01 | 2012-02-08 | 上海超日太阳能科技股份有限公司 | X type positive electrode structure used for solar battery |
| CN102544129A (en) * | 2012-01-18 | 2012-07-04 | 四川钟顺太阳能开发有限公司 | Solar battery |
| CN102709339A (en) * | 2012-05-25 | 2012-10-03 | 嘉兴优太太阳能有限公司 | Solar cell structure of improved electrode pattern |
| CN103000708A (en) * | 2012-09-27 | 2013-03-27 | 奥特斯维能源（太仓）有限公司 | Annular positive electrode |
| CN103035413A (en) * | 2011-09-30 | 2013-04-10 | 太阳诱电株式会社 | Solar battery unit |
| CN103317836A (en) * | 2013-06-21 | 2013-09-25 | 东莞南玻光伏科技有限公司 | Silk-screen printing screen of crystalline silicon solar cell |
| CN203521435U (en) * | 2013-09-30 | 2014-04-02 | 深圳市大族激光科技股份有限公司 | MWT silicon solar cell front-surface electrode grid line structure and cell |
| CN203941915U (en) * | 2014-04-30 | 2014-11-12 | 江苏爱多光伏科技有限公司 | A kind of radial solar energy electrode grid line structure |
| CN105405903A (en) * | 2015-12-18 | 2016-03-16 | 四川钟顺太阳能开发有限公司 | Solar cell surface grid line structure suitable for high concentration |
-
2016
- 2016-11-07 CN CN201610976157.7A patent/CN106328730A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201307598Y (en) * | 2008-11-10 | 2009-09-09 | 李毅 | Concentric circle amorphous silicon membrane solar battery |
| CN202142542U (en) * | 2011-06-01 | 2012-02-08 | 上海超日太阳能科技股份有限公司 | X type positive electrode structure used for solar battery |
| CN103035413A (en) * | 2011-09-30 | 2013-04-10 | 太阳诱电株式会社 | Solar battery unit |
| US20130139879A1 (en) * | 2011-09-30 | 2013-06-06 | Taiyo Yuden Co., Ltd. | Solar cell |
| CN102544129A (en) * | 2012-01-18 | 2012-07-04 | 四川钟顺太阳能开发有限公司 | Solar battery |
| CN102709339A (en) * | 2012-05-25 | 2012-10-03 | 嘉兴优太太阳能有限公司 | Solar cell structure of improved electrode pattern |
| CN103000708A (en) * | 2012-09-27 | 2013-03-27 | 奥特斯维能源（太仓）有限公司 | Annular positive electrode |
| CN103317836A (en) * | 2013-06-21 | 2013-09-25 | 东莞南玻光伏科技有限公司 | Silk-screen printing screen of crystalline silicon solar cell |
| CN203521435U (en) * | 2013-09-30 | 2014-04-02 | 深圳市大族激光科技股份有限公司 | MWT silicon solar cell front-surface electrode grid line structure and cell |
| CN203941915U (en) * | 2014-04-30 | 2014-11-12 | 江苏爱多光伏科技有限公司 | A kind of radial solar energy electrode grid line structure |
| CN105405903A (en) * | 2015-12-18 | 2016-03-16 | 四川钟顺太阳能开发有限公司 | Solar cell surface grid line structure suitable for high concentration |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111742418A (en) * | 2018-02-23 | 2020-10-02 | 株式会社钟化 | Solar cell and electronic device provided with same |
| CN111742418B (en) * | 2018-02-23 | 2023-08-29 | 株式会社钟化 | Solar cell and electronic device provided with same |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170111 |
|
| WD01 | Invention patent application deemed withdrawn after publication |