CN102709339A - Solar cell structure of improved electrode pattern - Google Patents
Solar cell structure of improved electrode pattern Download PDFInfo
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- CN102709339A CN102709339A CN2012101704493A CN201210170449A CN102709339A CN 102709339 A CN102709339 A CN 102709339A CN 2012101704493 A CN2012101704493 A CN 2012101704493A CN 201210170449 A CN201210170449 A CN 201210170449A CN 102709339 A CN102709339 A CN 102709339A
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- silicon chip
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Abstract
The invention provides a solar cell structure of an improved electrode pattern, which comprises a round silicon chip and main gate lines arranged on the round silicon chip, wherein the round silicon chip comprises a central area and a peripheral area; a central auxiliary gate line is concentrically and annularly distributed, peripheral auxiliary gate lines are distributed in a grid shape; the parts of the main gate lines positioned in the central area are continuous straight line sections; the parts of the main gate lines positioned in the peripheral area are a plurality of main gate line sections positioned on a same straight line together with the continuous straight line sections; each continuous straight line section is gradually widened from one end of the continuous straight line section to the other end of the continuous straight line section; each main gate line section is gradually widened from one end of the main gate line section to the other end of the main gate line section; and a spacing between the adjacent central auxiliary gate lines gradually becomes larger from the centre of a circle of the round silicon chip to the outside. The solar cell structure has the beneficial effects that the distribution of the auxiliary gate lines is matched with the characteristic of the silicon chip with non-uniform charge distribution density, the whole main gate lines are adjusted and widened according to the characteristic of the silicon chip with non-uniform charge distribution density, the silver pulp dosage is reasonably reduced, and the widths of the gate lines are gradually changed to facilitate stress reduction.
Description
Technical field
The present invention relates to solar cell, particularly, relate to the solar battery structure that improves electrode pattern.
Background technology
The photovoltaic panel assembly is that a kind of exposure just can produce galvanic TRT in the sun, and the solid photovoltaic cell of mainly processing with semiconductor material (for example silicon) is basically formed, and comprises P type semiconductor and N type semiconductor.P type semiconductor (P refers to positive, positively charged): mix a spot of triad by monocrystalline silicon through special process and form, can be in the inner hole that forms positively charged of semiconductor; N type semiconductor (N refers to negative, and is electronegative): mix a spot of pentad by monocrystalline silicon through special process and form, can be at the electronegative free electron of the inner formation of semiconductor.
Many positively charged holes and electronegative ionized impurity are arranged in P type semiconductor.Under effect of electric field, the hole is transportable, and ionized impurity (ion) is fixed.Many movable negatrons and fixing cation are arranged in the N type semiconductor.When the P type contacts with N type semiconductor, spread to N type semiconductor from P type semiconductor in the near interface hole, electronics spreads to P type semiconductor from N type semiconductor.Hole and electronics meet and compound, and charge carrier disappears.Therefore in the interface of near interface, there is a segment distance to lack charge carrier, the charged fixed ion that is distributed in the space is but arranged, be called the space charge region.P type semiconductor space charge on one side is an anion, and N type semiconductor space charge on one side is a cation.Negative ions produces electric field near interface, and this electric field stops charge carrier further to spread, and reaches balance.
When light frequency surpasses a certain limiting frequency, receive light-struck solar panel surface photoelectron of will overflowing immediately, photoelectric effect takes place.When adding a closed circuit in the solar panel outside, add the forward power supply, the photoelectron of these effusions all arrives anode and just forms photoelectric current.
The circular silicon chip of available technology adopting cuts into the waste that the rectangle silicon chip causes silicon materials; And the uneven silicon chip characteristic of equally distributed secondary grid line and charge distribution density is not complementary; Whole piece main grid line be that continuous straight line also is not complementary with the uneven silicon chip characteristic of charge distribution density and also silver slurry consumption big, the width of grid line is consistent to be unfavorable for reducing stress.
Summary of the invention
To defective of the prior art, the purpose of this invention is to provide a kind of solar battery structure that improves electrode pattern.
According to an aspect of the present invention, a kind of solar battery structure that improves electrode pattern is provided, comprises circular silicon chip and be arranged on the main grid line on the said circular silicon chip; Comprise middle section and outer peripheral areas on the said circular silicon chip, wherein, said middle section is enclosed in the said outer peripheral areas; Be provided with central secondary grid line in the said middle section; Be provided with peripheral secondary grid line in the said outer peripheral areas, said main grid line connects secondary grid line of said central authorities and peripheral secondary grid line, and the secondary grid line of said central authorities is concentric annular distribution; The secondary grid line in said periphery distributes as net shape; The part that said main grid line is positioned at said middle section is continuous straightway, and the part that said main grid line is positioned at said outer peripheral areas is the main grid line segment that a plurality of and said continuous straightway is located along the same line, and has the gap between the adjacent said main grid line segment; The two ends of said main grid line segment are fillet structure; The secondary grid line in said periphery connects said main grid line segment, and said middle section is and the concentric border circular areas of said circular silicon chip that the width of said continuous straightway is gradually wide from one of which end to the other end; The width of said main grid line segment is gradually wide from one of which end to the other end, and the spacing between the adjacent secondary grid line of said central authorities outwards becomes big gradually from the center of circle of said circular silicon chip.
Preferably, the quantity of said main grid line is two, and the diameter of said middle section connects mutually through auxiliary grid line between the secondary grid line of said central authorities greater than the spacing between two said main grid lines.
Preferably, the width of said auxiliary grid line is greater than the width of the secondary grid line of said central authorities.
Preferably, the quantity of said main grid line is three, and the main grid line in the middle of being positioned at is through the center of said circular silicon chip.
Preferably, also comprise the housing grid line, wherein, said housing grid line in the form of a ring.
Preferably, said housing grid line is positioned at said outer peripheral areas.
Preferably, said housing grid line extends along the edge of said silicon chip.
Preferably, the weldering end that rises of said continuous straightway is wider than only weldering end.
Preferably, the weldering end that rises of said main grid line segment is wider than only weldering end.
Employing of the present invention is circular can not to cause the waste that causes silicon materials because of cutting; The distribution and the uneven silicon chip characteristic of charge distribution density of secondary grid line are complementary; Whole piece main grid line is adjusted width according to the uneven silicon chip characteristic of charge distribution density; Rationally reduced silver-colored slurry consumption, and the width gradual change of grid line, be beneficial to and reduce stress.
Description of drawings
Through reading the detailed description of non-limiting example being done with reference to following accompanying drawing, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1 illustrates the structural representation according to the solar battery structure of the improvement electrode pattern of the first embodiment of the present invention;
Fig. 2 illustrates the structural representation of the solar battery structure of improvement electrode pattern according to a second embodiment of the present invention.
Embodiment
Fig. 1 illustrates the structural representation according to the solar battery structure of the improvement electrode pattern of the first embodiment of the present invention; Particularly, according to the solar battery structure of improvement electrode pattern provided by the invention, comprise circular silicon chip 1 and be arranged on the main grid line on the said circular silicon chip 1; Comprise middle section 5 and outer peripheral areas 4 on the said circular silicon chip; Wherein, said middle section 5 is enclosed in the said outer peripheral areas 4, is provided with central secondary grid line 3 in the said middle section 5; Be provided with peripheral secondary grid line in the said outer peripheral areas 4; Said main grid line connects secondary grid line 3 of said central authorities and peripheral secondary grid line, and the secondary grid line 3 of said central authorities is concentric annular distribution, and the secondary grid line in said periphery distributes as net shape.
The part that said main grid line is positioned at said middle section 5 is continuous straightway 21; The part that said main grid line is positioned at said outer peripheral areas 4 is the main grid line segment 22 that a plurality of and said continuous straightway 21 is located along the same line; There is the gap between the adjacent said main grid line segment; The two ends of said main grid line segment 22 are fillet structure; The secondary grid line in said periphery connects said main grid line segment 22, and said middle section 5 is the border circular areas concentric with said circular silicon chip 1, and the width of said continuous straightway 21 is gradually wide from one of which end to the other end; The width of said main grid line segment 22 is gradually wide from one of which end to the other end, and the spacing between the secondary grid line 3 of adjacent said central authorities outwards becomes big gradually from the center of circle of said circular silicon chip 1.
Preferably, the quantity of said main grid line is two, and the diameter of said middle section connects mutually through auxiliary grid line 8 between the secondary grid line of said central authorities greater than the spacing between two said main grid lines.The width of said auxiliary grid line 8 is greater than the width of the secondary grid line of said central authorities.The weldering end that rises of said continuous straightway is wider than only weldering end.
Employing of the present invention is circular can not to cause the waste that causes silicon materials because of cutting; The distribution and the uneven silicon chip characteristic of charge distribution density of secondary grid line are complementary; Whole piece main grid line is adjusted width according to the uneven silicon chip characteristic of charge distribution density; Rationally reduced silver-colored slurry consumption, and the width gradual change of grid line, be beneficial to and reduce stress.
Fig. 2 illustrates the structural representation of the solar battery structure of improvement electrode pattern according to a second embodiment of the present invention; Those skilled in the art can be interpreted as a variant embodiment illustrated in fig. 1 with present embodiment; Particularly, present embodiment and difference part embodiment illustrated in fig. 1 be, in the present embodiment; The quantity of said main grid line is three, and the main grid line in the middle of being positioned at is through the center of said circular silicon chip.Preferably, also comprise the housing grid line according to the solar battery structure of improvement electrode pattern provided by the invention, wherein, said housing grid line in the form of a ring.Preferably, said housing grid line is positioned at said outer peripheral areas.Preferably, said housing grid line extends along the edge of said silicon chip.Because the area of circular silicon chip wants big with respect to the area of the rectangle silicon chip that cutting obtains, therefore can reduce the resistance of photoelectric current through said housing grid line.
More than specific embodiment of the present invention is described.It will be appreciated that the present invention is not limited to above-mentioned specific implementations, those skilled in the art can make various distortion or modification within the scope of the claims, and this does not influence flesh and blood of the present invention.
Claims (9)
1. a solar battery structure that improves electrode pattern comprises circular silicon chip and is arranged on the main grid line on the said circular silicon chip, it is characterized in that; Comprise middle section and outer peripheral areas on the said circular silicon chip, wherein, said middle section is enclosed in the said outer peripheral areas; Be provided with central secondary grid line in the said middle section; Be provided with peripheral secondary grid line in the said outer peripheral areas, said main grid line connects secondary grid line of said central authorities and peripheral secondary grid line, and the secondary grid line of said central authorities is concentric annular distribution; The secondary grid line in said periphery distributes as net shape; The part that said main grid line is positioned at said middle section is continuous straightway, and the part that said main grid line is positioned at said outer peripheral areas is the main grid line segment that a plurality of and said continuous straightway is located along the same line, and has the gap between the adjacent said main grid line segment; The two ends of said main grid line segment are fillet structure; The secondary grid line in said periphery connects said main grid line segment, and said middle section is and the concentric border circular areas of said circular silicon chip that the width of said continuous straightway is gradually wide from one of which end to the other end; The width of said main grid line segment is gradually wide from one of which end to the other end, and the spacing between the adjacent secondary grid line of said central authorities outwards becomes big gradually from the center of circle of said circular silicon chip.
2. the solar battery structure of improvement electrode pattern according to claim 1; It is characterized in that; The quantity of said main grid line is two, and the diameter of said middle section connects mutually through auxiliary grid line between the secondary grid line of said central authorities greater than the spacing between two said main grid lines.
3. the solar battery structure of improvement electrode pattern according to claim 2 is characterized in that, the width of said auxiliary grid line is greater than the width of the secondary grid line of said central authorities.
4. according to the solar battery structure of each described improvement electrode pattern in the claim 1 to 3, it is characterized in that the quantity of said main grid line is three, the main grid line in the middle of being positioned at is through the center of said circular silicon chip.
5. according to the solar battery structure of each described improvement electrode pattern in the claim 1 to 4, it is characterized in that, also comprise the housing grid line, wherein, said housing grid line in the form of a ring.
6. the solar battery structure of improvement electrode pattern according to claim 5 is characterized in that, said housing grid line is positioned at said outer peripheral areas.
7. the solar battery structure of improvement electrode pattern according to claim 5 is characterized in that, said housing grid line extends along the edge of said silicon chip.
8. according to the solar battery structure of each described improvement electrode pattern in the claim 1 to 7, it is characterized in that the weldering end that rises of said continuous straightway is wider than only weldering end.
9. according to the solar battery structure of each described improvement electrode pattern in the claim 1 to 8, it is characterized in that the weldering end that rises of said main grid line segment is wider than only weldering end.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210170449.3A CN102709339B (en) | 2012-05-25 | 2012-05-25 | Solar cell structure of improved electrode pattern |
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| CN201210170449.3A CN102709339B (en) | 2012-05-25 | 2012-05-25 | Solar cell structure of improved electrode pattern |
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| CN102709339A true CN102709339A (en) | 2012-10-03 |
| CN102709339B CN102709339B (en) | 2015-05-20 |
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| CN201210170449.3A Expired - Fee Related CN102709339B (en) | 2012-05-25 | 2012-05-25 | Solar cell structure of improved electrode pattern |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103317836A (en) * | 2013-06-21 | 2013-09-25 | 东莞南玻光伏科技有限公司 | Silk-screen printing screen of crystalline silicon solar cell |
| CN106328730A (en) * | 2016-11-07 | 2017-01-11 | 刘锋 | Solar cell with efficient light interception |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009059999A (en) * | 2007-09-03 | 2009-03-19 | Rohm Co Ltd | Semiconductor device |
| WO2011140815A1 (en) * | 2010-05-13 | 2011-11-17 | 无锡尚德太阳能电力有限公司 | Solar cell, screen printing plate and solar cell module |
| CN102299203A (en) * | 2011-08-25 | 2011-12-28 | 浙江正泰太阳能科技有限公司 | Solar energy cell and solar energy cell right side electrode design method |
| CN202721138U (en) * | 2012-05-25 | 2013-02-06 | 嘉兴优太太阳能有限公司 | Solar cell structure with improved electrode pattern |
-
2012
- 2012-05-25 CN CN201210170449.3A patent/CN102709339B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009059999A (en) * | 2007-09-03 | 2009-03-19 | Rohm Co Ltd | Semiconductor device |
| WO2011140815A1 (en) * | 2010-05-13 | 2011-11-17 | 无锡尚德太阳能电力有限公司 | Solar cell, screen printing plate and solar cell module |
| CN102299203A (en) * | 2011-08-25 | 2011-12-28 | 浙江正泰太阳能科技有限公司 | Solar energy cell and solar energy cell right side electrode design method |
| CN202721138U (en) * | 2012-05-25 | 2013-02-06 | 嘉兴优太太阳能有限公司 | Solar cell structure with improved electrode pattern |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103317836A (en) * | 2013-06-21 | 2013-09-25 | 东莞南玻光伏科技有限公司 | Silk-screen printing screen of crystalline silicon solar cell |
| CN103317836B (en) * | 2013-06-21 | 2015-09-09 | 东莞南玻光伏科技有限公司 | Crystal silicon solar energy battery screen printing screens |
| CN106328730A (en) * | 2016-11-07 | 2017-01-11 | 刘锋 | Solar cell with efficient light interception |
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| CN102709339B (en) | 2015-05-20 |
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