CN205985017U - High -efficient absorb light's monocrystalline silicon piece - Google Patents
High -efficient absorb light's monocrystalline silicon piece Download PDFInfo
- Publication number
- CN205985017U CN205985017U CN201620789152.9U CN201620789152U CN205985017U CN 205985017 U CN205985017 U CN 205985017U CN 201620789152 U CN201620789152 U CN 201620789152U CN 205985017 U CN205985017 U CN 205985017U
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- CN
- China
- Prior art keywords
- silicon chip
- chip body
- matte
- monocrystalline silicon
- wire casing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a high -efficient absorb light's monocrystalline silicon piece, including the silicon chip body, be equipped with the main grid line on the silicon chip body, the vice grid line of evenly having arranged on the silicon chip body, be equipped with the silica film on the extinction face of silicon chip body upper surface, evenly be equipped with spill wire casing matte on the silica film, the face in a poor light at silicon chip body bottom position place coats and is stamped the anti -corrosion structure layer, spill wire casing matte divide into a recess, left recess and right recess. The utility model relates to a high -efficient absorb light's monocrystalline silicon piece, simple structure through utilizing the beam refraction principle, at making herbs into wool surface formation spill wire casing matte, reduces the effect that the reflection of light was used for realizing high -efficient absorb light to carry high conversion efficiency. Improve the life of silicon chip through silica film and anti -corrosion structure layer, the anti temperature ability of reinforcing silicon chip reduces the cost.
Description
Technical field
The utility model is related to monocrystalline silicon piece technical field, specially a kind of monocrystalline silicon piece of efficient absorption light.
Background technology
Monocrystalline silicon piece, the monocrystal of silicon, is a kind of crystal with substantially complete lattice structure.Different directions has
Different property, is a kind of good semiconducting material.Purity requirement reaches 99.9999%, even up to more than 99.9999999%.
Be used for producing the semiconductor devices, solar cell etc..Drawn in single crystal growing furnace with highly purified polysilicon and form.Monocrystalline silicon piece master
Being used for making semiconductor element is the raw material manufacturing semiconductor silicon device, for heavy-duty rectifier processed, high power transistor,
Diode, switching device etc., now, the figure of visible everywhere in our life " silicon " and effect, crystal silicon solar energy battery
It is that to form industrialization over nearly 15 years the fastest.The elemental silicon of melting silicon atom in solidification is arranged in many crystalline substances with diamond lattice
Core, if these nucleus grow up to high preferred orientation identical crystal grain, these crystal grain are parallel to be combined and just crystallizes into monocrystalline silicon.Single
The preparation method of crystal silicon chip is typically first obtained polysilicon or amorphous silicon, then uses vertical pulling method or floating zone method to grow from melt
Go out bar-like single crystal silicon.Silicon single crystal rod is the raw material producing monocrystalline silicon piece, and in recent years, Chinese monocrystalline silicon yield substantially increases steadily
Long, it is on the one hand to be derived from the increase to low-grade and cheap silicon materials demand in the world the reason growth.On the other hand it is in recent years
Chinese equipment manufacturing quickly grows, and various information household electrical appliances and communication products are in great demand, therefore semiconductor devices and silicon materials
Market demand is all very big.With the Fast Growth in solar cell market, solar panel is mainly by crystal silicon chip system
Form, and affecting the emissivity of cell piece and electrical property is to be determined by the matte of silicon chip surface.
Utility model content
The purpose of this utility model is to provide a kind of monocrystalline silicon piece of efficient absorption light, to solve above-mentioned background technology
The problem of middle proposition.
For achieving the above object, the utility model provides following technical scheme：A kind of monocrystalline silicon piece of efficient absorption light,
Including silicon chip body, described silicon chip body is provided with main gate line, and described silicon chip body is uniformly placed with secondary grid line, described silicon chip
The extinction face of body upper surface is provided with silica membrane, and described silica membrane is uniformly provided with spill wire casing matte,
It is coated with anti-corrosion structure layer, described spill wire casing matte is divided into top recessed on the shady face that described silicon chip body bottom portion position is located
Groove, left groove and right groove.
Preferably, described this body section of silicon chip is octagon.
Preferably, described pair grid line quantity is no less than 12.
Preferably, eight angles on described silicon chip body are circular arc chamfering.
Compared with prior art, the beneficial effects of the utility model are：A kind of list of the utility model efficient absorption light
Crystal silicon chip, structure is simple, by using light refraction principle, forms spill wire casing matte on making herbs into wool surface, reduces the reflection of light
Act on and to realize the effect of efficient absorption light, thus improving conversion efficiency.By silica membrane and anti-corrosion structure layer
To improve the service life of silicon chip, to strengthen silicon chip temperature resistance ability, to reduce cost.
Brief description
Fig. 1 is the utility model overlooking the structure diagram；
Fig. 2 is the utility model main structure schematic diagram；
Fig. 3 is the utility model spill wire casing suede structure schematic diagram.
In figure：1 silicon chip body, 2 main gate line, 3 secondary grid lines, 4 circular arc chamferings, 5 extinction faces, 6 anti-corrosion structure layers, 7 spills
Wire casing matte, 71 top grooves, 72 left grooves, 73 right grooves, 8 shady faces, 9 silica membranes.
Specific embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely description is it is clear that described embodiment is only a part of embodiment of the utility model rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of making creative work
The every other embodiment being obtained, broadly falls into the scope of the utility model protection.
Refer to Fig. 1-3, the utility model provides a kind of technical scheme：A kind of monocrystalline silicon piece of efficient absorption light, bag
Include silicon chip body 1, described silicon chip body 1 is provided with main gate line 2, described silicon chip body 1 is uniformly placed with secondary grid line 3, described
The extinction face 5 of silicon chip body 1 upper surface is provided with silica membrane 9, and described silica membrane 9 is uniformly provided with spill line
Groove matte 7, the shady face 8 that described silicon chip body 1 bottom position is located is coated with anti-corrosion structure layer 6, described spill wire casing
Matte 7 is divided into top groove 71, left groove 72 and right groove 73, and described silicon chip body 1 section is octagon, described pair grid line 3
Quantity is no less than 12, and eight angles on described silicon chip body 1 are circular arc chamfering 4.
Operation principle：Extinction face 5 making herbs into wool concavity wire casing matte 7 on silicon chip body 1, can effectively prevent light anti-
It is shot out, by mutually refraction between left groove 72 and right groove 73, so that light can be fully utilized, shady face covers anti-
Corrosion structure layer 6 plays a protective role, and silica membrane 9 is used for improving high temperature resistance adverse circumstances ability, and eight angles are arranged to
Circular arc chamfering 4 can prevent from scratching during splicing.
While there has been shown and described that embodiment of the present utility model, for the ordinary skill in the art,
It is appreciated that these embodiments can be carried out with multiple changes in the case of without departing from principle of the present utility model and spirit, repair
Change, replace and modification, scope of the present utility model is defined by the appended claims and the equivalents thereof.
Claims (4)
1. a kind of monocrystalline silicon piece of efficient absorption light, including silicon chip body（1）It is characterised in that：Described silicon chip body（1）On
It is provided with main gate line（2）, described silicon chip body（1）On be uniformly placed with secondary grid line（3）, described silicon chip body（1）The suction of upper surface
Light face（5）It is provided with silica membrane（9）, described silica membrane（9）On be uniformly provided with spill wire casing matte（7）, institute
State silicon chip body（1）The shady face that bottom position is located（8）On be coated with anti-corrosion structure layer（6）, described spill wire casing matte
（7）It is divided into top groove（71）, left groove（72）And right groove（73）.
2. a kind of efficient absorption light according to claim 1 monocrystalline silicon piece it is characterised in that：Described silicon chip body
（1）Section is octagon.
3. a kind of efficient absorption light according to claim 1 monocrystalline silicon piece it is characterised in that：Described pair grid line（3）
Quantity is no less than 12.
4. a kind of efficient absorption light according to claim 1 monocrystalline silicon piece it is characterised in that：Described silicon chip body
（1）On eight angles be circular arc chamfering（4）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620789152.9U CN205985017U (en) | 2016-12-26 | 2016-12-26 | High -efficient absorb light's monocrystalline silicon piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620789152.9U CN205985017U (en) | 2016-12-26 | 2016-12-26 | High -efficient absorb light's monocrystalline silicon piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205985017U true CN205985017U (en) | 2017-02-22 |
Family
ID=58027807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620789152.9U Expired - Fee Related CN205985017U (en) | 2016-12-26 | 2016-12-26 | High -efficient absorb light's monocrystalline silicon piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205985017U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020248580A1 (en) * | 2019-06-10 | 2020-12-17 | 通威太阳能（安徽）有限公司 | Monocrystalline silicon cell with increased specific surface area and texturing method therefor |
-
2016
- 2016-12-26 CN CN201620789152.9U patent/CN205985017U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020248580A1 (en) * | 2019-06-10 | 2020-12-17 | 通威太阳能（安徽）有限公司 | Monocrystalline silicon cell with increased specific surface area and texturing method therefor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170222 Termination date: 20191226 |