CN103094423B - A kind of P type heterojunction solar battery and preparation method thereof - Google Patents
A kind of P type heterojunction solar battery and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of P type heterojunction solar battery and preparation method thereof, described method includes: a, provide P-type silicon sheet prepared by a directional solidification method；B, described P-type silicon sheet is carried out surface remove impurity cleaning, remove its surface impurity；C, to surface remove impurity clean after P-type silicon sheet carry out making herbs into wool and cleaning；D, on described P-type silicon sheet, form Facad structure and structure。Described method adopts P-type silicon sheet prepared by directional solidification method to be that substrate prepares P type heterojunction solar battery, without adopting vertical pulling method or zone melting preparation tradition monocrystalline silicon piece can prepare P type heterojunction solar battery, thus reducing the cost of manufacture of P type heterojunction solar battery。
Description
Technical field
The present invention relates to solar cell making process technical field, more particularly, it relates to a kind of P type heterojunction solar battery and preparation method thereof。
Background technology
Heterojunction solar battery is different from traditional solaode, its PN junction obtains not by the three, the 5th main group active elements that adulterate on a silicon substrate, but directly forming one layer of P type or N-type silicon thin film on a silicon substrate, described silicon film thickness is nanoscale, is generally amorphous silicon membrane。Owing to the material of PN junction both sides there occurs the change of matter, therefore said method formation solaode is called heterojunction solar battery。Heterojunction solar battery has that high transformation efficiency, technique is simple and the good advantages of higher of light durability, is a kind of silicon solar cell having very much development potentiality。
Existing heterojunction solar battery is prepared from a monocrystaline silicon substrate。With reference to Fig. 1, existing P type heterojunction solar battery includes: p type single crystal silicon substrate S 1；It is arranged on the Facad structure of described p type single crystal silicon substrate S 1 upper surface；It is arranged on the structure of described p type single crystal silicon substrate S 1 lower surface。Wherein, described Facad structure includes: be arranged on the intrinsic amorphous silicon layer L1 of described p type single crystal silicon substrate S 1 upper surface；It is arranged on the N-type non-crystalline silicon layer L2 of described intrinsic amorphous silicon layer L1 upper surface；It is arranged on the transparent conductive film L3 of described N-type non-crystalline silicon layer L2 upper surface。Described structure includes: be arranged on the intrinsic amorphous silicon layer L4 of described p type single crystal silicon substrate S 1 lower surface；It is arranged on the P-type non-crystalline silicon layer L5 of described intrinsic amorphous silicon layer L4 lower surface；It is arranged on the transparent conductive film L6 of described P-type non-crystalline silicon layer L5 lower surface。
Visible, prior art needs to adopt monocrystalline silicon piece to prepare P type heterojunction solar battery as substrate。But, tradition monocrystalline silicon piece is usually employing vertical pulling method or zone melting preparation, relatively costly, thus causing that the cost of manufacture of P type heterojunction solar battery is higher。
Summary of the invention
For solving above-mentioned technical problem, the present invention provides a kind of P type heterojunction solar battery, and described method adopts P-type silicon sheet prepared by directional solidification method to be that substrate makes P type heterojunction solar battery, reduces the cost of manufacture of P type heterojunction solar battery。
For achieving the above object, the present invention provides following technical scheme:
A kind of manufacture method of P type heterojunction solar battery, the method includes:
A, provide P-type silicon sheet prepared by a directional solidification method；
B, described P-type silicon sheet is carried out surface remove impurity cleaning, remove its surface impurity；
C, to surface remove impurity clean after P-type silicon sheet carry out making herbs into wool and cleaning；
D, on described P-type silicon sheet, form Facad structure and structure；
Wherein, described Facad structure includes: be positioned at the first intrinsic amorphous silicon layer of described P-type silicon sheet upper surface；It is positioned at the N-type non-crystalline silicon layer of described first intrinsic amorphous silicon layer upper surface；It is positioned at the first transparent conductive film of described N-type non-crystalline silicon layer upper surface；Described structure includes: be positioned at the second intrinsic amorphous silicon layer of described P-type silicon sheet lower surface；It is positioned at the P-type non-crystalline silicon layer of described second intrinsic amorphous silicon layer lower surface；It is positioned at the second transparent conductive film of described P-type non-crystalline silicon layer lower surface。
Preferably, in said method, also include between b and c:
P-type silicon sheet after surface remove impurity is cleaned carries out gettering, removes its internal impurity。
Preferably, in said method, described described P-type silicon sheet is carried out surface remove impurity clean and include:
Described P-type silicon sheet carrying out first time cleaning, described P-type silicon sheet is put into the first cleaning reagent and is carried out, in described first abluent, the volume ratio of ammonia, hydrogen peroxide and water is 1:(1 ~ 2): (5 ~ 7)；
Described P-type silicon sheet carrying out second time clean, put in KOH solution by described P-type silicon sheet and be carried out, the concentration of described KOH solution is 1% ~ 40%；
Described P-type silicon sheet carrying out third time clean, put in HF solution by described P-type silicon sheet and be carried out, the concentration of described HF solution is 1% ~ 15%；
Dried is carried out after described P-type silicon sheet is washed。
Preferably, in said method, described to surface remove impurity clean after P-type silicon sheet carry out gettering for described P-type silicon sheet is carried out phosphorus gettering。
Preferably, in said method, described described P-type silicon sheet carried out phosphorus gettering include:
Described P-type silicon sheet being put into diffusion furnace and carries out phosphorus gettering, diffusion agent is phosphorus oxychloride。
Preferably, in said method, described P-type silicon sheet after gettering is carried out making herbs into wool and cleaning includes:
Described P-type silicon sheet is put into alkaline solution carries out making herbs into wool；
After making herbs into wool, described P-type silicon sheet being put into the second cleaning reagent and is carried out, in described second cleaning reagent, the volume ratio of hydrochloric acid, hydrogen peroxide and water is 1:(1 ~ 2): (6 ~ 8)；
Being put in HF solution by described P-type silicon sheet and be carried out, the concentration of described HF solution is 1% ~ 15%；
Dried is carried out after described P-type silicon sheet is washed。
Preferably, in said method, described Facad structure and the structure of being formed on described P-type silicon sheet includes:
Forming the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer on described P-type silicon sheet, described first intrinsic amorphous silicon is positioned at the upper surface of described P-type silicon sheet, and described second intrinsic amorphous silicon layer is positioned at the lower surface of described P-type silicon sheet；
N-type non-crystalline silicon layer is formed at described first intrinsic amorphous silicon layer upper surface；
P-type non-crystalline silicon layer is formed at described second intrinsic amorphous silicon layer lower surface；
Forming the first transparent conductive film and the second transparent conductive film, described first transparent conductive film is positioned at described N-type non-crystalline silicon layer upper surface, and described second transparent conductive film is positioned at described P-type non-crystalline silicon layer lower surface；
Wherein, described first intrinsic amorphous silicon layer, N-type non-crystalline silicon layer and the first transparent conductive film constitute described Facad structure；Described second intrinsic amorphous silicon layer, P-type non-crystalline silicon layer and the second transparent conductive film constitute described structure。
Preferably, in said method, also include:
Front gate line is formed, at the described second formation back side, transparent conductive film surface grid line on described first transparent conductive film surface；
Make described front gate line form Ohmic contact with described first transparent conductive film by sintering, make described back side grid line form Ohmic contact with described second transparent conductive film。
Present invention also offers a kind of P type heterojunction solar battery, this P type heterojunction solar battery includes:
P-type silicon sheet prepared by directional solidification method；
It is positioned at the Facad structure of described P-type silicon sheet upper surface；
It is positioned at the structure of described P-type silicon sheet lower surface；
Wherein, described Facad structure includes: be positioned at the first intrinsic amorphous silicon layer of described P-type silicon sheet upper surface；It is positioned at the N-type non-crystalline silicon layer of described first intrinsic amorphous silicon layer upper surface；It is positioned at the first transparent conductive film of described N-type non-crystalline silicon layer upper surface；Described structure includes: be positioned at the second intrinsic amorphous silicon layer of described P-type silicon sheet lower surface；It is positioned at the P-type non-crystalline silicon layer of described second intrinsic amorphous silicon layer lower surface；It is positioned at the second transparent conductive film of described P-type non-crystalline silicon layer lower surface。
Preferably, in aforementioned p-type heterojunction solar battery, also include:
It is positioned at the front gate line of described first transparent conductive film upper surface；
It is positioned at the back side grid line of described second transparent conductive film lower surface；
Wherein, described front gate line and described first transparent conductive film Ohmic contact, described back side grid line and described second transparent conductive film Ohmic contact。
Can be seen that from technique scheme, the method of the invention adopts P-type silicon sheet prepared by directional solidification method to be that substrate prepares P type heterojunction solar battery, without adopting the monocrystalline silicon piece of conventional Czochralski or zone melting preparation can prepare P type heterojunction solar battery, thus reducing the cost of manufacture of P type heterojunction solar battery。
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings。
Fig. 1 is the structural representation of a kind of P type heterojunction solar battery common in prior art；
The manufacture method schematic flow sheet of a kind of P type heterojunction solar battery that Fig. 2 provides for the embodiment of the present invention one；
The structural representation of a kind of P type heterojunction solar battery that Fig. 3 provides for the embodiment of the present invention two；
Fig. 4 is the top view of p type single crystal silicon sheet；
Fig. 5 is the top view of P-type silicon sheet prepared by directional solidification method。
Detailed description of the invention
Just as described in the background section, prior art needs to adopt monocrystalline silicon piece to prepare P type heterojunction solar battery as substrate。But, tradition monocrystalline silicon piece is usually employing vertical pulling method or zone melting preparation, relatively costly, thus causing that the cost of manufacture of P type heterojunction solar battery is higher。
Inventor studies discovery, it is possible to adopting P-type silicon sheet prepared by directional solidification method is that substrate prepares P type heterojunction solar battery。P-type silicon sheet prepared by directional solidification method has the structure close with p type single crystal silicon sheet, it is possible to form high-quality intrinsic amorphous silicon layer on its surface, forms the interface with fabricating low-defect-density, it is ensured that its surface passivation effect。And relative to monocrystalline silicon piece, adopt N-type silicon chip prepared by directional solidification method to have relatively low production cost, such that it is able to reduce the production cost of P type heterojunction solar battery。
Based on the studies above, the invention provides the manufacture method of a kind of P type heterojunction solar battery, the method includes:
A, provide P-type silicon sheet prepared by a directional solidification method；
B, described P-type silicon sheet is carried out surface remove impurity cleaning, remove its surface impurity；
C, to surface remove impurity clean after P-type silicon sheet carry out making herbs into wool and cleaning；
D, on described P-type silicon sheet, form Facad structure and structure；
Wherein, described Facad structure includes: be positioned at the first intrinsic amorphous silicon layer of described P-type silicon sheet upper surface；It is positioned at the N-type non-crystalline silicon layer of described first intrinsic amorphous silicon layer upper surface；It is positioned at the first transparent conductive film of described N-type non-crystalline silicon layer upper surface；Described structure includes: be positioned at the second intrinsic amorphous silicon layer of described P-type silicon sheet lower surface；It is positioned at the P-type non-crystalline silicon layer of described second intrinsic amorphous silicon layer lower surface；It is positioned at the second transparent conductive film of described P-type non-crystalline silicon layer lower surface。
The method of the invention adopts P-type silicon sheet prepared by directional solidification method to be that substrate prepares P type heterojunction solar battery, without adopting the monocrystalline silicon piece of conventional Czochralski or zone melting preparation can prepare P type heterojunction solar battery, thus reducing the cost of manufacture of P type heterojunction solar battery。
It is above the core concept of the application, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that, described embodiment is only a part of embodiment of the present invention, rather than whole embodiments。Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention。
Elaborate a lot of detail in the following description so that fully understanding the present invention, but the present invention can also adopt other to be different from alternate manner described here to be implemented, those skilled in the art can do similar popularization when without prejudice to intension of the present invention, and therefore the present invention is not by the restriction of following public specific embodiment。
Secondly, the present invention is described in detail in conjunction with schematic diagram, when describing the embodiment of the present invention in detail; for ease of explanation; representing that the profile of apparatus structure can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this。Additionally, the three-dimensional space of length, width and height should be comprised in actual fabrication。
Embodiment one
Based on above-mentioned thought, present embodiments providing the manufacture method of a kind of P type heterojunction solar battery, with reference to Fig. 2, the method includes:
Step S11: P-type silicon sheet prepared by a directional solidification method is provided。
Described directional solidification method refers to set up the thermograde of specific direction in investment casting shell, makes the liquid that melts along a kind of casting technique of hot-fluid opposite direction crystalline orientation solidification as requested。The method technique is simple, less costly。Polycrystalline silicon ingot casting is exactly the application example of a kind of common directional solidification method。
P-type silicon sheet described in the present embodiment can be prepared from polycrystalline silicon ingot casting basis。When long crystalline substance, bottom the silica crucible of polycrystalline ingot furnace, lay seed of single crystal silicon seed portion fusing during by sectional temperature-controlled guarantee melting silicon materials, to remain seed crystal induced crystal growth, form P-type silicon ingot, described silicon ingot is carried out the cutting described P-type silicon sheet of acquisition。P-type silicon sheet prepared by said method, relative to tradition monocrystalline silicon piece, cost of manufacture is very low。So, adopting described P-type silicon sheet is that substrate is prepared P type hetero-junctions and can will be substantially reduced the cost of manufacture of P type heterojunction solar battery by battery very much。
P-type silicon sheet described in the present embodiment is to adopt directional solidification method to be prepared from。Namely described P-type silicon sheet is the P type quasi-monocrystalline silicon of preparation on the basis of polysilicon ingot casting equipment, and its surface texture is close with p type single crystal silicon sheet, so high-quality amorphous silicon layer can be formed on its surface。And process conditions are when reaching, p type single crystal silicon sheet can also be prepared by directional solidification method。
Step S12: described P-type silicon sheet is carried out surface remove impurity cleaning, removes its surface impurity。
First, described P-type silicon sheet is carried out first time cleaning。Described P-type silicon sheet being put into the first cleaning reagent be carried out, scavenging period is 2min-20min。Described first abluent is the mixed solution of ammonia and hydrogen peroxide。In described first cleaning reagent, the volume ratio of ammonia, hydrogen peroxide and water is 1:(1 ~ 2): (5 ~ 7)。
Then, described P-type silicon sheet carries out second time to clean。Being put in KOH solution by described P-type silicon sheet and be carried out, the concentration of described KOH solution is 1% ~ 40%, and scavenging period is 1min-100min。
Clean described P-type silicon sheet being carried out third time。Being put in HF solution by described P-type silicon sheet and be carried out, the concentration of described HF solution is 1% ~ 15%, and scavenging period is 10s-30min。
Cleaned by above-mentioned time and can effectively remove the damage layer on described P-type silicon sheet surface and be attached to the impurity on its surface。
Finally, dried is carried out after described P-type silicon sheet being washed。By washing the chemical reagent removing silicon chip surface。Described P-type silicon sheet after washing is put into baking oven be dried, in order to carry out subsequent handling。
Step S13: the P-type silicon sheet after cleaning is carried out gettering, removes its internal impurity。
Described P-type silicon sheet adopts directional solidification method to prepare with polysilicon ingot casting equipment, and generally, prepared by directional solidification method is quasi-monocrystalline silicon。So, relative to monocrystalline silicon piece, described P-type silicon sheet inevitably there are some impurity and defect, impurity is easy in fault location segregation or precipitation。And when there is impurities determination or precipitation, impurity starts active, the complex centre of minority carrier can be become, reducing minority carrier lifetime。Now, owing to still suffering from more defect inside it, can cause that the conversion efficiency of the P type heterojunction solar battery of preparation is relatively low。This enforcement processes to remove the internal impurity of described P-type silicon sheet by gettering, to ensure the conversion efficiency of P type heterojunction solar battery。
Described P-type silicon sheet can be carried out phosphorus gettering to remove its internal impurity。
Preferably, phosphorus oxychloride reagent can be adopted as phosphorus source, described P-type silicon sheet be put into diffusion furnace and carries out phosphorus gettering。
Step S14: the P-type silicon sheet after gettering carried out making herbs into wool and cleaning。
P-type silicon sheet through above-mentioned process is carried out making herbs into wool, and surface forms matte thereon, reduces reflection, to improve its utilization rate to light。Preferably, can being put into by the upper surface of described P-type silicon sheet and carry out making herbs into wool in alkaline solution, the making herbs into wool time is 8min ~ 50min。
After making herbs into wool, described P-type silicon sheet is put into the second cleaning reagent and is carried out。Described second cleaning reagent is the mixed solution of hydrochloric acid and hydrogen peroxide。Wherein, in described second cleaning reagent, the volume ratio of hydrochloric acid, hydrogen peroxide and water is 1:(1 ~ 2): (6 ~ 8), scavenging period is 1min-100min。。
Then, then being put in 1% ~ 15%HF solution by described P-type silicon sheet and be carried out, the concentration of described HF solution is 1% ~ 15%, and scavenging period is 10s-100min。
Finally, dried is carried out after described P-type silicon sheet being washed。By washing the chemical reagent removing silicon chip surface residual, more described P-type silicon sheet is put into baking oven it is dried process, in order to carry out subsequent handling。
Step S15: form Facad structure and structure on described P-type silicon sheet。
Wherein, described Facad structure includes: be positioned at the first intrinsic amorphous silicon layer of described P-type silicon sheet upper surface；It is positioned at the N-type non-crystalline silicon layer of described first intrinsic amorphous silicon layer upper surface；It is positioned at the first transparent conductive film of described N-type non-crystalline silicon layer upper surface。Described structure includes: be positioned at the second intrinsic amorphous silicon layer of described P-type silicon sheet lower surface；It is positioned at the P-type non-crystalline silicon layer of described second intrinsic amorphous silicon layer lower surface；It is positioned at the second transparent conductive film of described P-type non-crystalline silicon layer lower surface。
First the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer can be formed on described P-type silicon sheet。Wherein, described first intrinsic amorphous silicon is positioned at the upper surface of described P-type silicon sheet, and described second intrinsic amorphous silicon layer is positioned at the lower surface of described P-type silicon sheet。
Then, N-type non-crystalline silicon layer is formed at described first intrinsic amorphous silicon layer upper surface。P-type non-crystalline silicon layer is formed again at described second intrinsic amorphous silicon layer lower surface。The doped chemical of General N type amorphous silicon layer is P elements, and the doped chemical of P-type non-crystalline silicon layer is boron element。And the diffusion temperature of boron element is less than the diffusion temperature of P elements。So, be initially formed N-type non-crystalline silicon layer, then form P-type non-crystalline silicon layer, with avoid boron element again by thermal diffusion。
Finally, the first transparent conductive film and the second transparent conductive film are formed。Described first transparent conductive film is positioned at described N-type non-crystalline silicon layer upper surface, and described second transparent conductive film is positioned at described P-type non-crystalline silicon layer lower surface。
After completing above-mentioned each processing step, form front gate line at described first conductive film upper surface, at the described second formation back side, transparent conductive film surface grid line。Make described front gate line form Ohmic contact with described first transparent conductive film again through sintering, make described back side grid line form Ohmic contact with described second transparent conductive film。Ultimately form P type heterojunction solar battery。
Wherein, PECVD device can be adopted to form each amorphous silicon layer of described Facad structure and structure and each transparent conductive film。Described each amorphous silicon layer is the amorphous silicon layer containing protium。Protium can increase the passivation effect of each amorphous silicon layer, increases the life-span of minority carrier, improves the conversion efficiency of battery。Described each transparent conductive film is TCO(transparentconductiveoxide, transparent conductive oxides) thin film。
It should be noted that the span of each data all includes endpoint value described in the embodiment of the present application。
Technical scheme described in the present embodiment adopts P-type silicon sheet prepared by directional solidification method to be that substrate prepares P type heterojunction solar battery, namely the present embodiment technical scheme provides a kind of method adopting P type quasi-monocrystalline silicon (P type class monocrystalline silicon piece) to prepare P type heterojunction solar battery, without adopting monocrystalline silicon piece can prepare P type heterojunction solar battery, thus reducing the cost of manufacture of P type heterojunction solar battery。
Embodiment two
Based on above-described embodiment, present embodiments providing a kind of P type heterojunction solar battery, with reference to Fig. 3, this P type heterojunction solar battery includes:
P-type silicon sheet S2 prepared by directional solidification method, described P-type silicon sheet S2 is as the substrate of P type heterojunction solar battery；
It is positioned at the Facad structure of described P-type silicon sheet upper surface；
It is positioned at the structure of described P-type silicon sheet lower surface；
Wherein, described Facad structure includes: be positioned at the first intrinsic amorphous silicon layer L1 of described P-type silicon sheet S2 upper surface；It is positioned at the N-type non-crystalline silicon layer L2 of described first intrinsic amorphous silicon layer L1 upper surface；It is positioned at the first transparent conductive film L3 of described N-type non-crystalline silicon layer L2 upper surface。Described structure includes: be positioned at the second intrinsic amorphous silicon layer L4 of described P-type silicon sheet S2 lower surface；It is positioned at the P-type non-crystalline silicon layer L5 of described second intrinsic amorphous silicon layer L4 lower surface；It is positioned at the second transparent conductive film L6 of described P-type non-crystalline silicon layer L5 lower surface。
Described each amorphous silicon layer is the amorphous silicon layer containing protium。Protium can increase the passivation effect of each amorphous silicon layer, increases the life-span of minority carrier, improves the conversion efficiency of battery。Described each transparent conductive film is TCO(transparentconductiveoxide, transparent conductive oxides) thin film。
Described P type heterojunction solar battery also includes: is positioned at described first transparent conductive film surface and forms front gate line, is positioned at the described second formation back side, transparent conductive film surface grid line。Described front gate line and described first transparent conductive film Ohmic contact, described back side grid line and described second transparent conductive film Ohmic contact。
With reference to Fig. 4, traditional p type single crystal silicon sheet is usually the monocrystalline silicon piece of czochralski method or zone melting preparation, and it is shaped as round rectangle。With reference to Fig. 5, P-type silicon sheet prepared by directional solidification method is to be prepared from basis prepared by polysilicon, and its shape is rectangle。So preparing the P type heterojunction solar battery of same size specification, adopting P-type silicon sheet prepared by directional solidification method to have bigger light-receiving area than p type single crystal silicon sheet, being conducive to improving the transformation efficiency of solaode。
P type heterojunction solar battery described in the present embodiment adopts P-type silicon sheet prepared by directional solidification method to be substrate。Described P-type silicon sheet is low relative to traditional monocrystalline silicon piece production cost, and then reduces the production cost of P row heterojunction solar battery。
It should be noted that each reagent of the application or the temperature of water-washing process are between 20 DEG C-90 DEG C, the more high cleaning of temperature applies more short。Scavenging period can be set according to concrete cleaning temperature。And each numerical range of the embodiment of the present application all includes endpoint value。
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention。The multiple amendment of these embodiments be will be apparent from for those skilled in the art, and generic principles defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments。Therefore, the present invention is not intended to be limited to the embodiments shown herein, and is to fit to the widest scope consistent with principles disclosed herein and features of novelty。
Claims (10)
1. the manufacture method of a P type heterojunction solar battery, it is characterised in that including:
A, provide P-type silicon sheet prepared by a directional solidification method；
B, described P-type silicon sheet is carried out surface remove impurity cleaning, remove its surface impurity；
C, to surface remove impurity clean after P-type silicon sheet carry out making herbs into wool and cleaning；
D, on described P-type silicon sheet, form Facad structure and structure；
Wherein, described Facad structure includes: be positioned at the first intrinsic amorphous silicon layer of described P-type silicon sheet upper surface；It is positioned at the N-type non-crystalline silicon layer of described first intrinsic amorphous silicon layer upper surface；It is positioned at the first transparent conductive film of described N-type non-crystalline silicon layer upper surface；Described structure includes: be positioned at the second intrinsic amorphous silicon layer of described P-type silicon sheet lower surface；It is positioned at the P-type non-crystalline silicon layer of described second intrinsic amorphous silicon layer lower surface；It is positioned at the second transparent conductive film of described P-type non-crystalline silicon layer lower surface；
Form the time of described N-type non-crystalline silicon layer prior to forming the time of described P-type non-crystalline silicon layer；
Described first intrinsic amorphous silicon layer, described second intrinsic amorphous silicon layer, described N-type non-crystalline silicon layer and described P-type non-crystalline silicon layer are the amorphous silicon layer containing protium。
2. method according to claim 1, it is characterised in that also include between b and c:
P-type silicon sheet after surface remove impurity is cleaned carries out gettering, removes its internal impurity。
3. method according to claim 2, it is characterised in that described described P-type silicon sheet is carried out surface remove impurity clean and include:
Described P-type silicon sheet carrying out first time cleaning, described P-type silicon sheet is put into the first cleaning reagent and is carried out, in described first abluent, the volume ratio of ammonia, hydrogen peroxide and water is 1:(1～2): (5～7)；
Described P-type silicon sheet carrying out second time clean, put in KOH solution by described P-type silicon sheet and be carried out, the concentration of described KOH solution is 1%～40%；
Described P-type silicon sheet carrying out third time clean, put in HF solution by described P-type silicon sheet and be carried out, the concentration of described HF solution is 1%～15%；
Dried is carried out after described P-type silicon sheet is washed。
4. method according to claim 3, it is characterised in that described to surface remove impurity clean after P-type silicon sheet carry out gettering for described P-type silicon sheet is carried out phosphorus gettering。
5. method according to claim 4, it is characterised in that described described P-type silicon sheet is carried out phosphorus gettering include:
Described P-type silicon sheet being put into diffusion furnace and carries out phosphorus gettering, diffusion agent is phosphorus oxychloride。
6. method according to claim 5, it is characterised in that described surface remove impurity is cleaned after P-type silicon sheet carry out making herbs into wool and cleaning includes:
Described P-type silicon sheet is put into alkaline solution carries out making herbs into wool；
After making herbs into wool, described P-type silicon sheet being put into the second cleaning reagent and is carried out, in described second cleaning reagent, the volume ratio of hydrochloric acid, hydrogen peroxide and water is 1:(1～2): (6～8)；
Being put in HF solution by described P-type silicon sheet and be carried out, the concentration of described HF solution is 1%～15%；
Dried is carried out after described P-type silicon sheet is washed。
7. method according to claim 6, it is characterised in that described Facad structure and the structure of being formed on described P-type silicon sheet includes:
Forming the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer on described P-type silicon sheet, described first intrinsic amorphous silicon is positioned at the upper surface of described P-type silicon sheet, and described second intrinsic amorphous silicon layer is positioned at the lower surface of described P-type silicon sheet；
N-type non-crystalline silicon layer is formed at described first intrinsic amorphous silicon layer upper surface；
P-type non-crystalline silicon layer is formed at described second intrinsic amorphous silicon layer lower surface；
Forming the first transparent conductive film and the second transparent conductive film, described first transparent conductive film is positioned at described N-type non-crystalline silicon layer upper surface, and described second transparent conductive film is positioned at described P-type non-crystalline silicon layer lower surface；
Wherein, described first intrinsic amorphous silicon layer, N-type non-crystalline silicon layer and the first transparent conductive film constitute described Facad structure；Described second intrinsic amorphous silicon layer, P-type non-crystalline silicon layer and the second transparent conductive film constitute described structure。
8. method according to claim 7, it is characterised in that also include:
Front gate line is formed, at the described second formation back side, transparent conductive film surface grid line on described first transparent conductive film surface；
Make described front gate line form Ohmic contact with described first transparent conductive film by sintering, make described back side grid line form Ohmic contact with described second transparent conductive film。
9. a P type heterojunction solar battery, it is characterised in that including:
P-type silicon sheet prepared by directional solidification method；
It is positioned at the Facad structure of described P-type silicon sheet upper surface；
It is positioned at the structure of described P-type silicon sheet lower surface；
Wherein, described Facad structure includes: be positioned at the first intrinsic amorphous silicon layer of described P-type silicon sheet upper surface；It is positioned at the N-type non-crystalline silicon layer of described first intrinsic amorphous silicon layer upper surface；It is positioned at the first transparent conductive film of described N-type non-crystalline silicon layer upper surface；Described structure includes: be positioned at the second intrinsic amorphous silicon layer of described P-type silicon sheet lower surface；It is positioned at the P-type non-crystalline silicon layer of described second intrinsic amorphous silicon layer lower surface；It is positioned at the second transparent conductive film of described P-type non-crystalline silicon layer lower surface；
Form the time of described N-type non-crystalline silicon layer prior to forming the time of described P-type non-crystalline silicon layer；
Described first intrinsic amorphous silicon layer, described second intrinsic amorphous silicon layer, described N-type non-crystalline silicon layer and described P-type non-crystalline silicon layer are the amorphous silicon layer containing protium。
10. P type heterojunction solar battery according to claim 9, it is characterised in that also include:
It is positioned at the front gate line of described first transparent conductive film upper surface；
It is positioned at the back side grid line of described second transparent conductive film lower surface；
Wherein, described front gate line and described first transparent conductive film Ohmic contact, described back side grid line and described second transparent conductive film Ohmic contact。
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| CN102268724A (en) * | 2011-07-28 | 2011-12-07 | 英利能源（中国）有限公司 | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell |
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| CN102268724A (en) * | 2011-07-28 | 2011-12-07 | 英利能源（中国）有限公司 | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell |
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