CN109097821A - A kind of processing of casting single crystal seed crystal and laying method - Google Patents
A kind of processing of casting single crystal seed crystal and laying method Download PDFInfo
- Publication number
- CN109097821A CN109097821A CN201811086999.0A CN201811086999A CN109097821A CN 109097821 A CN109097821 A CN 109097821A CN 201811086999 A CN201811086999 A CN 201811086999A CN 109097821 A CN109097821 A CN 109097821A
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- China
- Prior art keywords
- seed crystal
- monocrystalline
- blocks
- square rod
- laying method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A kind of processing of casting single crystal seed crystal and laying method, this approach includes the following steps, and (1) intercepts more monocrystalline poles with monocrystalline shear；(2) use monocrystalline excavation machine by more monocrystalline pole evolutions of interception at square rod；(3) recycle shear that every square rod is uniformly truncated into the seed crystal blocks of muti-piece equal thickness；(4) seed crystal blocks that every square rod intercepts are cleaned respectively, carries out seed crystal blocks shop fixtures in the way of entire row or permutation after cleaned, wherein the seed crystal blocks of entire row or permutation must derive from same root monocrystalline square rod.The laying method can effectively ensure that the control errors between single crystal seed within 0.1mm, effectively reduce the gap in seed crystal process of deployment, reduce the dislocation density of crystal ingot by the way that the seed crystal blocks of every row or each column are uniformly derived from same root monocrystalline pole.
Description
Technical field
The present invention relates to a kind of processing of casting single crystal seed crystal and laying methods.
Background technique
Current solar energy materials market crystalline silicon in occupation of absolute predominance, crystal silicon solar product mainly include monocrystalline
Silicon and polysilicon, wherein impurity is low with the content of defect in monocrystalline silicon battery, high conversion efficiency；But preparation process is complicated, to original
The purity requirement of material is high, and production cost is higher；There are a large amount of crystal boundary, highdensity dislocation and impurity inside polycrystal silicon cell,
Its transfer efficiency is than single crystal battery low efficiency 1.5% or so, lower production costs, and cost performance is higher.Casting class monocrystalline silicon is a kind of
There is the new product of monocrystalline silicon high conversion efficiency and polysilicon high performance-price ratio simultaneously, production cost is significantly lower than monocrystalline silicon, tool
There is important commercial value.
Existing casting single crystal bottom seed crystal is spliced using multiple signle crystasl block, but since seed crystal block size is being processed
In the process, there can be the problems such as certain deviation, seed crystal blocks splicing intersection is easy to appear gap, the fissure of displacement, be promoted to be effective
The quality of crystal ingot needs to control the splicing seams between seed crystal.
Summary of the invention
Its of the invention purpose, which is that, provides a kind of casting single crystal seed crystal processing and laying method, solves existing casting singly
Brilliant bottom seed crystal is spliced using multiple signle crystasl block, but in process due to seed crystal block size, can be existed certain
Deviation, seed crystal blocks splicing intersection the problem of being easy to appear gap, the fissure of displacement.
It adopts the technical scheme that achieve the above object, a kind of processing of casting single crystal seed crystal and laying method, the party
Method the following steps are included:
(1) more monocrystalline poles are intercepted with monocrystalline shear；
(2) use monocrystalline excavation machine by more monocrystalline pole evolutions of interception at square rod；
(3) recycle shear that every square rod is uniformly truncated into the seed crystal blocks of muti-piece equal thickness；
(4) seed crystal blocks that every square rod intercepts are cleaned respectively, it is cleaned later according to the side of entire row or permutation
Formula carries out seed crystal blocks shop fixtures, and wherein the seed crystal blocks of entire row or permutation must derive from same root monocrystalline square rod.
Beneficial effect
The present invention has the following advantages that compared with prior art.
It is an advantage of the invention that can have by the way that the seed crystal blocks of every row or each column are uniformly derived from same root monocrystalline pole
Effect guarantees that the control errors between single crystal seed within 0.1mm, effectively reduce the gap in seed crystal process of deployment, reduce crystal ingot
Dislocation density.
Specific embodiment
A kind of processing of casting single crystal seed crystal and laying method, method includes the following steps:
(1) more monocrystalline poles are intercepted with monocrystalline shear；
(2) use monocrystalline excavation machine by more monocrystalline pole evolutions of interception at square rod；
(3) recycle shear that every square rod is uniformly truncated into the seed crystal blocks of muti-piece equal thickness；
(4) seed crystal blocks that every square rod intercepts are cleaned respectively, it is cleaned later according to the side of entire row or permutation
Formula carries out seed crystal blocks shop fixtures, and wherein the seed crystal blocks of entire row or permutation must derive from same root monocrystalline square rod.
The seed crystal number of blocks that the every square rod is process is necessary for the integral multiple of seed crystal shop fixtures number of rows or columns.
Embodiment
For the monocrystal rod that the present embodiment uses for the monocrystal rod for centainly needing length, the length of monocrystal rod need to be according to seed crystal blocks
Height and single seed crystal number of blocks need usage amount to determine.
The height of the present embodiment seed crystal is in 15-30mm；The quantity of single seed crystal blocks is 5-9 block；Corresponding monocrystal rod processing and
At seed crystal blocks quantity in 10-18 block；When using seed crystal blocks with a thickness of 20mm, the monocrystalline that crystal ingot bottom need to be laid with single seed
Crystal block quantity is 5 pieces, i.e., the quantity of seed crystal blocks that monocrystal rod is process is 10 or 15 pieces；Corresponding to monocrystal rod effective length is
200mm or 300mm.
In seed crystal process of deployment, seed crystal paving mode must be laid with by the way of entire row or permutation；When using whole
When row's mode is laid with, the single seed crystal blocks of monocrystalline must source same monocrystal rod.
Claims (2)
1. a kind of casting single crystal seed crystal processing and laying method, which is characterized in that method includes the following steps:
(1) more monocrystalline poles are intercepted with monocrystalline shear；
(2) use monocrystalline excavation machine by more monocrystalline pole evolutions of interception at square rod；
(3) recycle shear that every square rod is uniformly truncated into the seed crystal blocks of muti-piece equal thickness；
(4) seed crystal blocks that every square rod intercepts are cleaned respectively, it is cleaned later according to the side of entire row or permutation
Formula carries out seed crystal blocks shop fixtures, and wherein the seed crystal blocks of entire row or permutation must derive from same root monocrystalline square rod.
2. a kind of casting single crystal seed crystal processing according to claim 1 and laying method, which is characterized in that described every
The seed crystal number of blocks that square rod is process is necessary for the integral multiple of seed crystal shop fixtures number of rows or columns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811086999.0A CN109097821A (en) | 2018-09-18 | 2018-09-18 | A kind of processing of casting single crystal seed crystal and laying method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811086999.0A CN109097821A (en) | 2018-09-18 | 2018-09-18 | A kind of processing of casting single crystal seed crystal and laying method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109097821A true CN109097821A (en) | 2018-12-28 |
Family
ID=64866667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811086999.0A Pending CN109097821A (en) | 2018-09-18 | 2018-09-18 | A kind of processing of casting single crystal seed crystal and laying method |
Country Status (1)
| Country | Link |
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| CN (1) | CN109097821A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109989104A (en) * | 2019-01-25 | 2019-07-09 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of preparation method of casting single crystal silicon ingot, monocrystal silicon |
| CN115012035A (en) * | 2022-06-02 | 2022-09-06 | 金阳(泉州)新能源科技有限公司 | Cast crystalline silicon preparation method capable of reducing dislocation defects and polycrystalline proportion |
-
2018
- 2018-09-18 CN CN201811086999.0A patent/CN109097821A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109989104A (en) * | 2019-01-25 | 2019-07-09 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of preparation method of casting single crystal silicon ingot, monocrystal silicon |
| CN115012035A (en) * | 2022-06-02 | 2022-09-06 | 金阳(泉州)新能源科技有限公司 | Cast crystalline silicon preparation method capable of reducing dislocation defects and polycrystalline proportion |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181228 |
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| WD01 | Invention patent application deemed withdrawn after publication |