CN104818520A - Seed crystal jointing structure for oriented solidification of cast ingots - Google Patents
Seed crystal jointing structure for oriented solidification of cast ingots Download PDFInfo
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- CN104818520A CN104818520A CN201510179733.0A CN201510179733A CN104818520A CN 104818520 A CN104818520 A CN 104818520A CN 201510179733 A CN201510179733 A CN 201510179733A CN 104818520 A CN104818520 A CN 104818520A
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Abstract
The invention relates to a seed crystal jointing structure for oriented solidification of cast ingots. The seed crystal jointing structure comprises jointed seed crystal blocks, wherein jointing surface betweens two seed crystal blocks are planes which are vertical to the bottom of a crucible; a transverse columnar hole vertical to the jointing planes is formed in each seed crystal block; after adjacent seed crystal blocks are jointed, the transverse columnar holes are jointed to form a bar-shaped columnar cavity; a silicon rod inserts the columnar cavity. The transverse columnar holes are formed in the seed crystal blocks; two ends of the silicon rod insert the columnar holes of adjacent seed crystal blocks, thus jointing of the seed crystal blocks is realized; the jointing manner has a mortise-and-tenon jointing structure, thus lamination of the seed crystal jointing surfaces is improved. During heating, seed crystal at the edges is expanded by heating and the mortise-and-tenon jointing structure becomes relatively tight, thus expanding of seams caused by wrapped edges of the seed crystal blocks is prevented. The silicon rod and the columnar holes can be processed at one time through a drilling machine and are easily realized in industries; the jointing (inserting) method is simple, is easy to be mastered by operators and has relatively high practical value.
Description
Technical field
The present invention relates to directional freeze ingot casting seed crystal splicing construction, belong to silicon crystal and manufacture field.
Background technology
In recent years, silicon single-crystal and policrystalline silicon are widely used in the field such as photovoltaic solar cell, liquid-crystal display.The conventional manufacture method of current class silicon single-crystal is directional solidification method, and the method lays rectangular parallelepiped seed crystal in flat crucible bottom, the regularly arranged formation inculating crystal layer of seed crystal.Silicon material is placed in flat crucible, is layed on inculating crystal layer.Controlled by the temperature of fusion stage, after the melting of silicon material, seed crystal melts gradually from the face contacted with silicon liquid, then is not melting through oriented heat dissipating oriented growth seed crystal realizing silicon ingot, obtains the crystal grain similar or the same with seed crystal.
Under the connecting method that rectangular parallelepiped seed crystal is regularly arranged, in the process of directional solidification method growth class monocrystalline, easily produce dislocation source, and then cause subsequent crystallographic dislocation multiplication, or form polycrystalline crystal boundary.Show after deliberation, crystal boundary causes monocrystalline area ratio to decline, and dislocation causes silicon chip to form a large amount of defects, and the photoelectric transformation efficiency reduction of solar cell, work-ing life shorten, thus affects the performance of photovoltaic device.
For this reason, Chinese invention patent application CN 103060892 A discloses " a kind monocrystalline silicon cast ingot seed crystal joining method ", changes vertical Mosaic face traditional for seed crystal into Mosaic face with angle of inclination or radian.Adopt the tangential normal direction with flat crucible bottom plane of Mosaic face, the seed crystal connecting method that the two does not overlap, reduces dislocation source by the shape changing seed crystal, even reduces polycrystalline crystal boundary and produces, realize full monocrystalline, the class single crystal growing that dislocation source is few.And then decrease the dislocation defects of silicon chip, improve monocrystalline area ratio, improve the photoelectric transformation efficiency of solar cell, extend the life-span of battery, thus improve the performance of photovoltaic device.
But contriver finds through experiment, aforesaid method is still at existing defects.Although inclined-plane splicing decreases the generation in gap to a certain extent, but make this seed crystal connecting method in seed crystal splicing and silicon material filling process because inclined-plane is smooth, seed crystal may be caused to splice distortion because of pressure, thus affect follow-up monocrystalline ingot quality, very high technical requirements is proposed to the splicing of seed crystal, process allowance degradation.Meanwhile, the seed crystal expanded by heating of arrangement of compacting in heat-processed, may tilt, the splicing gap between seed crystal can become large, causes subsequent crystallographic dislocation multiplication, or forms polycrystalline crystal boundary.
Summary of the invention
The object of the invention is to: the defect overcoming above-mentioned prior art, propose a kind of directional freeze ingot casting seed crystal splicing construction.
In order to achieve the above object, the directional freeze ingot casting seed crystal splicing construction that the present invention proposes, comprise the seed crystal blocks of splicing mutually, Mosaic face between adjacent seed crystal blocks is be vertical plane with crucible bottom, it is characterized in that: seed crystal blocks offers the horizontal cylindrical hole vertical with Mosaic face, after adjacent seed crystal blocks splicing, described horizontal cylindrical hole is to spell shape growth bar shaped cylinder chamber, be inserted with silicon rod in this cylinder chamber, the gap of described silicon rod and cylindricality through-hole wall is less than 0.5mm.
The present invention further improves and is:
1, described cylindrical hole is through hole, and silicon rod length is equal with seed crystal blocks transverse width, and these silicon rod two ends are inserted in the corresponding cylindrical hole of adjacent seed crystal blocks respectively, and adjacent seed crystal blocks is linked together by laterally inserted silicon rod.
2, the gap-fill between described cylindrical hole and silicon rod has silica flour.
3, seed crystal blocks is block seed crystal, square seed crystal or tabular seed crystal.
4, described silicon rod laterally drills through acquisition by rig on seed crystal blocks, and the boring stayed on seed crystal blocks after drilling through silicon rod is described cylindrical hole.
5, the pore diameter range of described cylindrical hole is 2.5mm-5mm, and the external diametrical extent of described silicon rod is 3-5mm.
The present invention offers horizontal cylindrical hole on seed crystal blocks, silicon rod two ends are inserted in the cylindrical hole of adjacent seed crystal blocks, realize the splicing of seed crystal blocks, this splicing form has joinery and its construction, improve the laminating degree of seed crystal Mosaic face, two pieces of seed crystals relatively sliding under stress can not be caused because of the polishing of two seed crystal Mosaic faces.In heat-processed, the seed crystal expanded by heating of edge, joinery and its construction is tightr, gap becomes less, and adjacent seed crystal blocks is fitted tightr, and the gap preventing from seed crystal blocks edge from tilting causing becomes large, thus farthest reduce crystal dislocation defect, improve monocrystalline area ratio, improve the photoelectric transformation efficiency of solar cell, extend the life-span of battery, thus improve the performance of photovoltaic device.Silicon rod of the present invention and cylindrical hole can be obtained in time processing by rig, are industrially easy to realize, and the present invention's splicing (grafting) method is simple, is easily grasped by operator, has high practical value.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Fig. 1 is seed crystal splicing construction cross-sectional schematic of the present invention.
Fig. 2 is seed crystal splicing construction explosive view of the present invention.
Number in the figure is schematically as follows: 1-seed crystal blocks, 2-seed crystal blocks, 3-cylindrical hole, 4-cylindrical hole, 5-Mosaic face, 6-silicon rod.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
As shown in Figure 1 and Figure 2, embodiment of the present invention directional freeze ingot casting seed crystal splicing construction, comprise the long strip shape tabular seed crystal blocks 1,2 of splicing mutually, Mosaic face 5 between adjacent seed crystal blocks 1,2 is the plane vertical with crucible bottom, seed crystal blocks 1 offers the horizontal cylindrical hole 3 vertical with Mosaic face 5, seed crystal blocks 2 offers the horizontal cylindrical hole 4 vertical with Mosaic face 5, after seed crystal blocks spelling 1,2 connects, horizontal cylindrical hole 3,4 pairs of spell shape growth bar shaped cylinder chamber, be inserted with silicon rod 6 in this cylinder chamber, silicon rod 6 is less than 0.5mm with the gap of cylindricality through hole 3,4 inwall.In this example, the internal diameter of cylindrical hole is 4mm, and the external diametrical extent of silicon rod is 3.9mm.
As shown in the figure, in this example, cylindrical hole 3,4 is through hole, and silicon rod 6 length is equal with seed crystal blocks transverse width, and these silicon rod 3 two ends are inserted in the corresponding cylindrical hole of adjacent seed crystal blocks respectively, and adjacent seed crystal blocks is linked together by laterally inserted silicon rod.For the ease of processing, in the present embodiment, silicon rod 6 laterally drills through acquisition by rig on seed crystal blocks, and the boring stayed on seed crystal blocks after drilling through silicon rod is described cylindrical hole.
In order to make the splicing between seed crystal blocks tightr, silica flour can be sprinkled in the gap of silicon rod and cylindrical hole, even if there is larger gap between silicon rod and cylindrical hole like this, also the firm splicing of seed crystal blocks can be realized by the filling of silica flour, industrially be easy to realize, convenient operation, and filling silica flour post gap obtains effective compensation, reduces crystal dislocation defect.
In addition, the embodiment of the present invention additionally provides class monocrystalline silicon cast ingot seed crystal joining method, and for directional solidification method class monocrystalline silicon cast ingot, inculating crystal layer is formed by described seed crystal blocks close-packed arrays, and seed crystal blocks has the seed crystal splicing construction of the present embodiment.
In addition to the implementation, the present invention can also have other embodiments.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop on the protection domain of application claims.
Claims (7)
1. directional freeze ingot casting seed crystal splicing construction, comprise the seed crystal blocks of splicing mutually, Mosaic face between adjacent seed crystal blocks is be vertical plane with crucible bottom, it is characterized in that: seed crystal blocks offers the horizontal cylindrical hole vertical with Mosaic face, after adjacent seed crystal blocks splicing, described horizontal cylindrical hole is to spell shape growth bar shaped cylinder chamber, and be inserted with silicon rod in this cylinder chamber, the gap of described silicon rod and cylindricality through-hole wall is less than 0.5mm.
2. directional freeze ingot casting seed crystal splicing construction according to claim 1, it is characterized in that: described cylindrical hole is through hole, silicon rod length is equal with seed crystal blocks transverse width, these silicon rod two ends are inserted in the corresponding cylindrical hole of adjacent seed crystal blocks respectively, and adjacent seed crystal blocks is linked together by laterally inserted silicon rod.
3. directional freeze ingot casting seed crystal splicing construction according to claim 2, is characterized in that: the gap-fill between described cylindrical hole and silicon rod has silica flour.
4. directional freeze ingot casting seed crystal splicing construction according to claim 1, is characterized in that: seed crystal blocks is block seed crystal, square seed crystal or tabular seed crystal.
5. directional freeze ingot casting seed crystal splicing construction according to claim 1, is characterized in that: described silicon rod laterally drills through acquisition by rig on seed crystal blocks, and the boring stayed on seed crystal blocks after drilling through silicon rod is described cylindrical hole.
6. directional freeze ingot casting seed crystal splicing construction according to claim 1, it is characterized in that: the pore diameter range of described cylindrical hole is 2.5mm-5mm, the external diametrical extent of described silicon rod is 3-5mm.
7. class monocrystalline silicon cast ingot seed crystal joining method, for directional solidification method class monocrystalline silicon cast ingot, is characterized in that: inculating crystal layer is formed by described seed crystal blocks close-packed arrays, and described seed crystal blocks has the seed crystal splicing construction described in any one of claim 1-6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510179733.0A CN104818520A (en) | 2015-04-15 | 2015-04-15 | Seed crystal jointing structure for oriented solidification of cast ingots |
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| CN201510179733.0A CN104818520A (en) | 2015-04-15 | 2015-04-15 | Seed crystal jointing structure for oriented solidification of cast ingots |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105568365A (en) * | 2016-02-03 | 2016-05-11 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal laying method and crystalline silicon and preparation method thereof |
| CN105671638A (en) * | 2016-03-01 | 2016-06-15 | 山东大学 | Preparation method for large-diameter-size SiC seed crystals |
| CN106757331A (en) * | 2016-12-16 | 2017-05-31 | 江西赛维Ldk太阳能高科技有限公司 | A kind of polycrystal silicon ingot and preparation method thereof |
| CN107460537A (en) * | 2017-09-15 | 2017-12-12 | 南通大学 | A kind of seed crystal blocks |
| DE102018200571A1 (en) * | 2018-01-15 | 2019-07-18 | Carl Zeiss Smt Gmbh | Method for producing a material body and for producing an optical element, optical element and container |
| CN112941628A (en) * | 2019-12-11 | 2021-06-11 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of crystalline silicon ingot |
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| CN101061570A (en) * | 2004-11-26 | 2007-10-24 | 波兰商艾蒙诺公司 | Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions |
| CN201287578Y (en) * | 2008-09-10 | 2009-08-12 | 张世雄 | Split joint decoration board |
| US20100193664A1 (en) * | 2009-01-30 | 2010-08-05 | Bp Corporation North America Inc. | Seed Layers and Process of Manufacturing Seed Layers |
| CN103060892A (en) * | 2012-12-26 | 2013-04-24 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal splicing method used for monocrystal-like silicone cast ingot |
| US20140182776A1 (en) * | 2012-12-31 | 2014-07-03 | Memc Singapore, Pte. Ltd (Uen200614797D) | Methods For Producing Rectangular Seeds For Ingot Growth |
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| CN101061570A (en) * | 2004-11-26 | 2007-10-24 | 波兰商艾蒙诺公司 | Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions |
| CN201287578Y (en) * | 2008-09-10 | 2009-08-12 | 张世雄 | Split joint decoration board |
| US20100193664A1 (en) * | 2009-01-30 | 2010-08-05 | Bp Corporation North America Inc. | Seed Layers and Process of Manufacturing Seed Layers |
| CN103060892A (en) * | 2012-12-26 | 2013-04-24 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal splicing method used for monocrystal-like silicone cast ingot |
| US20140182776A1 (en) * | 2012-12-31 | 2014-07-03 | Memc Singapore, Pte. Ltd (Uen200614797D) | Methods For Producing Rectangular Seeds For Ingot Growth |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105568365A (en) * | 2016-02-03 | 2016-05-11 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal laying method and crystalline silicon and preparation method thereof |
| CN105568365B (en) * | 2016-02-03 | 2018-04-17 | 江西赛维Ldk太阳能高科技有限公司 | A kind of seed crystal laying method, crystalline silicon and preparation method thereof |
| CN105671638A (en) * | 2016-03-01 | 2016-06-15 | 山东大学 | Preparation method for large-diameter-size SiC seed crystals |
| CN105671638B (en) * | 2016-03-01 | 2018-07-06 | 山东大学 | A kind of preparation method of major diameter dimension SiC seed crystals |
| CN106757331A (en) * | 2016-12-16 | 2017-05-31 | 江西赛维Ldk太阳能高科技有限公司 | A kind of polycrystal silicon ingot and preparation method thereof |
| CN106757331B (en) * | 2016-12-16 | 2019-03-08 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of polycrystal silicon ingot and preparation method thereof |
| CN107460537A (en) * | 2017-09-15 | 2017-12-12 | 南通大学 | A kind of seed crystal blocks |
| DE102018200571A1 (en) * | 2018-01-15 | 2019-07-18 | Carl Zeiss Smt Gmbh | Method for producing a material body and for producing an optical element, optical element and container |
| CN112941628A (en) * | 2019-12-11 | 2021-06-11 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of crystalline silicon ingot |
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