CN104831343A - Seed crystal splicing structure for ingot casting - Google Patents
Seed crystal splicing structure for ingot casting Download PDFInfo
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- CN104831343A CN104831343A CN201510179785.8A CN201510179785A CN104831343A CN 104831343 A CN104831343 A CN 104831343A CN 201510179785 A CN201510179785 A CN 201510179785A CN 104831343 A CN104831343 A CN 104831343A
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Abstract
The invention relates to a seed crystal splicing structure for ingot casting. The structure comprises mutually spliced seed crystal blocks, a splicing surface between adjacent seed crystal blocks is a plane vertical to the bottom of a crucible, the seed crystal blocks at one side of the splicing surface are provided with an elongated rectangular slot, the seed crystal blocks at the other side of the splicing surface are provided with an elongated rectangular projection suitable for being insert to the rectangular slot, and after the adjacent seed crystal blocks are spliced, the rectangular projection is insert to the rectangular slot, and a gap between splicing surfaces is lower than 0.5mm. The splicing surface of the seed crystal blocks are provided with the rectangular projection and the rectangular slot cooperating with each other to form a mortise and tenon joint structure to improve the lamination degree of the seed crystal splicing surface, and seed crystals at edges are expanded in the heating process, so the mortise and tenon joint structure is compact, the gap is small, the lamination of the adjacent seed crystal blocks is close, and the enlargement of the gap induced by cocking of edges of the seed crystal blocks is prevented, thereby the crystal dislocation defect is maximally reduced, and the monocrystalline area proportion is improved.
Description
Technical field
The present invention relates to ingot casting seed crystal splicing construction, belong to silicon crystal and manufacture field.
Background technology
In recent years, silicon single-crystal and policrystalline silicon are widely used in the field such as photovoltaic solar cell, liquid-crystal display.The conventional manufacture method of current class silicon single-crystal is directional solidification method, and the method lays rectangular parallelepiped seed crystal in flat crucible bottom, the regularly arranged formation inculating crystal layer of seed crystal.Silicon material is placed in flat crucible, is layed on inculating crystal layer.Controlled by the temperature of fusion stage, after the melting of silicon material, seed crystal melts gradually from the face contacted with silicon liquid, then is not melting through oriented heat dissipating oriented growth seed crystal realizing silicon ingot, obtains the crystal grain similar or the same with seed crystal.
Under the connecting method that rectangular parallelepiped seed crystal is regularly arranged, in the process of directional solidification method growth class monocrystalline, easily produce dislocation source, and then cause subsequent crystallographic dislocation multiplication, or form polycrystalline crystal boundary.Show after deliberation, crystal boundary causes monocrystalline area ratio to decline, and dislocation causes silicon chip to form a large amount of defects, and the photoelectric transformation efficiency reduction of solar cell, work-ing life shorten, thus affects the performance of photovoltaic device.
For this reason, Chinese invention patent application CN 103060892 A discloses " a kind monocrystalline silicon cast ingot seed crystal joining method ", changes vertical Mosaic face traditional for seed crystal into Mosaic face with angle of inclination or radian.Adopt the tangential normal direction with flat crucible bottom plane of Mosaic face, the seed crystal connecting method that the two does not overlap, reduces dislocation source by the shape changing seed crystal, even reduces polycrystalline crystal boundary and produces, realize full monocrystalline, the class single crystal growing that dislocation source is few.And then decrease the dislocation defects of silicon chip, improve monocrystalline area ratio, improve the photoelectric transformation efficiency of solar cell, extend the life-span of battery, thus improve the performance of photovoltaic device.
But contriver finds through experiment, aforesaid method is still at existing defects.Although inclined-plane splicing decreases the generation in gap to a certain extent, but make this seed crystal connecting method in seed crystal splicing and silicon material filling process because inclined-plane is smooth, seed crystal may be caused to splice distortion because of pressure, thus affect follow-up monocrystalline ingot quality, very high technical requirements is proposed to the splicing of seed crystal, process allowance degradation.Meanwhile, the seed crystal expanded by heating of arrangement of compacting in heat-processed, may tilt, the splicing gap between seed crystal can become large, causes subsequent crystallographic dislocation multiplication, or forms polycrystalline crystal boundary.
Summary of the invention
The object of the invention is to: the defect overcoming above-mentioned prior art, propose a kind of ingot casting seed crystal splicing construction.
In order to achieve the above object, the ingot casting seed crystal splicing construction that the present invention proposes, comprise the seed crystal blocks of splicing mutually, it is characterized in that: the Mosaic face between adjacent seed crystal blocks is be vertical plane with crucible bottom, and the seed crystal blocks of Mosaic face side offers a long strip shape rectangular tank, the seed crystal blocks of Mosaic face opposite side has the rectangular cam of the long strip shape being suitable for inserting this rectangular tank, after adjacent seed crystal blocks splicing, described rectangular cam insertion rectangular tank is interior and gap between Mosaic face is less than 0.5mm.
The present invention further improves and is:
1, the gap between rectangular cam and rectangular tank is not more than 0.5mm.
2, the gap-fill between described rectangular tank and rectangular cam has silica flour.
3, seed crystal blocks is block seed crystal, square seed crystal or tabular seed crystal.
The present invention arranges the rectangular cam of working in coordination and rectangular tank forms joinery and its construction at seed crystal blocks Mosaic face, improves the laminating degree of seed crystal Mosaic face, can not cause two pieces of seed crystals relatively sliding under stress because of the polishing of two seed crystal Mosaic faces.In heat-processed, the seed crystal expanded by heating of edge, joinery and its construction is tightr, gap becomes less, and adjacent seed crystal blocks is fitted tightr, and the gap preventing from seed crystal blocks edge from tilting causing becomes large, thus farthest reduce crystal dislocation defect, improve monocrystalline area ratio, improve the photoelectric transformation efficiency of solar cell, extend the life-span of battery, thus improve the performance of photovoltaic device.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Fig. 1 is the embodiment of the present invention one seed crystal splicing construction schematic diagram.
Fig. 2 is the embodiment of the present invention one seed crystal splicing construction explosive view.
Number in the figure is schematically as follows: 1-seed crystal blocks, 2-seed crystal blocks, 3-rectangular tank, 4-rectangular cam, 5-Mosaic face.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
Embodiment one
As Fig. 1, shown in Fig. 2, embodiment of the present invention ingot casting seed crystal splicing construction, comprise the long strip shape tabular seed crystal blocks 1 of splicing mutually, 2, adjacent seed crystal blocks 1, Mosaic face 5 between 2 is the plane vertical with crucible bottom, and the seed crystal blocks 1 of Mosaic face 5 side offers the rectangular tank 3 of a long strip shape, the seed crystal blocks 2 of Mosaic face 5 opposite side has the rectangular cam 4 of the long strip shape being suitable for inserting this rectangular tank 3, the cross section of rectangular tank 3 and rectangular cam 4 is rectangle, adjacent seed crystal blocks 1, after 2 splicings, rectangular cam 4 inserts in rectangular tank 3 and gap between Mosaic face 5 is less than 0.5mm, gap between projection 4 and groove 3 is not more than 0.5mm.
As shown in Figure 1 and Figure 2, rectangular tank 3 and rectangular cam 4 are positioned at the same side of Mosaic face 5, the upper wall of rectangular tank 3 is all parallel with crucible bottom with lower wall, and namely the upper wall place plane of rectangular tank 3 and the angle of Mosaic face are 90 °, and the lower wall place plane of rectangular tank 3 and the angle of Mosaic face are 90 °.In order to make splicing between seed crystal blocks tightr, can be sprinkled into silica flour in the gap of rectangular tank with projection, can reduce the space in gap on the one hand, another aspect can prevent the slip between seed crystal blocks.
In addition, the embodiment of the present invention additionally provides class monocrystalline silicon cast ingot seed crystal joining method, and for directional solidification method class monocrystalline silicon cast ingot, inculating crystal layer is formed by described seed crystal blocks close-packed arrays, and seed crystal blocks has the seed crystal splicing construction of the present embodiment.
In addition to the implementation, the present invention can also have other embodiments.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop on the protection domain of application claims.
Claims (5)
1. ingot casting seed crystal splicing construction, comprise the seed crystal blocks of splicing mutually, it is characterized in that: the Mosaic face between adjacent seed crystal blocks is be vertical plane with crucible bottom, and the seed crystal blocks of Mosaic face side offers a long strip shape rectangular tank, the seed crystal blocks of Mosaic face opposite side has the rectangular cam of the long strip shape being suitable for inserting this rectangular tank, after adjacent seed crystal blocks splicing, described rectangular cam insertion rectangular tank is interior and gap between Mosaic face is less than 0.5mm.
2. ingot casting seed crystal splicing construction according to claim 1, is characterized in that: the gap between rectangular cam and rectangular tank is not more than 0.5mm.
3. ingot casting seed crystal splicing construction according to claim 2, is characterized in that: the gap-fill between described rectangular tank and rectangular cam has silica flour.
4. ingot casting seed crystal splicing construction according to claim 1, is characterized in that: seed crystal blocks is block seed crystal, square seed crystal or tabular seed crystal.
5. class monocrystalline silicon cast ingot seed crystal joining method, for directional solidification method class monocrystalline silicon cast ingot, is characterized in that: inculating crystal layer is formed by described seed crystal blocks close-packed arrays, and described seed crystal blocks has the seed crystal splicing construction described in any one of claim 1-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510179785.8A CN104831343A (en) | 2015-04-15 | 2015-04-15 | Seed crystal splicing structure for ingot casting |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510179785.8A CN104831343A (en) | 2015-04-15 | 2015-04-15 | Seed crystal splicing structure for ingot casting |
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| CN104831343A true CN104831343A (en) | 2015-08-12 |
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| CN201510179785.8A Pending CN104831343A (en) | 2015-04-15 | 2015-04-15 | Seed crystal splicing structure for ingot casting |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105568365A (en) * | 2016-02-03 | 2016-05-11 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal laying method and crystalline silicon and preparation method thereof |
| CN105586632A (en) * | 2016-03-18 | 2016-05-18 | 南通大学 | Mono-like silicon ingot casting technology |
| CN105603508A (en) * | 2016-03-18 | 2016-05-25 | 南通大学 | Seed crystal splicing structure applicable to monocrystalline silicon-like ingots |
| CN105603509A (en) * | 2016-03-18 | 2016-05-25 | 南通大学 | Production process of monocrystalline silicon similar cast ingot based on directional solidification |
| CN105755531A (en) * | 2016-03-18 | 2016-07-13 | 南通大学 | Seed crystal block applicable to mono-like silicon cast ingot |
| CN107557864A (en) * | 2017-09-18 | 2018-01-09 | 南通大学 | A kind of seed crystal splicing construction |
| CN112391680A (en) * | 2020-11-16 | 2021-02-23 | 物生生物科技(北京)有限公司 | Splicing growth process for large-size single crystal diamond |
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| EP1498516B1 (en) * | 2002-04-19 | 2011-01-05 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Single crystal silicon producing method, single crystal silicon wafer and ingot produced thereby |
| CN102747417A (en) * | 2012-07-24 | 2012-10-24 | 江苏协鑫硅材料科技发展有限公司 | Method for ingotting monocrystalline silicon |
| CN103060892A (en) * | 2012-12-26 | 2013-04-24 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal splicing method used for monocrystal-like silicone cast ingot |
| CN103158200A (en) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | C-shaped silicon core lap joint method |
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| EP1498516B1 (en) * | 2002-04-19 | 2011-01-05 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Single crystal silicon producing method, single crystal silicon wafer and ingot produced thereby |
| CN201287578Y (en) * | 2008-09-10 | 2009-08-12 | 张世雄 | Split joint decoration board |
| CN103158200A (en) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | C-shaped silicon core lap joint method |
| CN102747417A (en) * | 2012-07-24 | 2012-10-24 | 江苏协鑫硅材料科技发展有限公司 | Method for ingotting monocrystalline silicon |
| CN103060892A (en) * | 2012-12-26 | 2013-04-24 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal splicing method used for monocrystal-like silicone cast ingot |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105568365A (en) * | 2016-02-03 | 2016-05-11 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal laying method and crystalline silicon and preparation method thereof |
| CN105568365B (en) * | 2016-02-03 | 2018-04-17 | 江西赛维Ldk太阳能高科技有限公司 | A kind of seed crystal laying method, crystalline silicon and preparation method thereof |
| CN105586632A (en) * | 2016-03-18 | 2016-05-18 | 南通大学 | Mono-like silicon ingot casting technology |
| CN105603508A (en) * | 2016-03-18 | 2016-05-25 | 南通大学 | Seed crystal splicing structure applicable to monocrystalline silicon-like ingots |
| CN105603509A (en) * | 2016-03-18 | 2016-05-25 | 南通大学 | Production process of monocrystalline silicon similar cast ingot based on directional solidification |
| CN105755531A (en) * | 2016-03-18 | 2016-07-13 | 南通大学 | Seed crystal block applicable to mono-like silicon cast ingot |
| WO2017156989A1 (en) * | 2016-03-18 | 2017-09-21 | 南通大学 | Seed crystal block applicable to monocrystal silicon-like cast ingot |
| CN105586632B (en) * | 2016-03-18 | 2018-03-30 | 南通大学 | One species monocrystalline silicon cast ingot technique |
| CN107557864A (en) * | 2017-09-18 | 2018-01-09 | 南通大学 | A kind of seed crystal splicing construction |
| CN112391680A (en) * | 2020-11-16 | 2021-02-23 | 物生生物科技(北京)有限公司 | Splicing growth process for large-size single crystal diamond |
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Application publication date: 20150812 |
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