CN102747417A - Method for ingotting monocrystalline silicon - Google Patents
Method for ingotting monocrystalline silicon Download PDFInfo
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- CN102747417A CN102747417A CN2012102588767A CN201210258876A CN102747417A CN 102747417 A CN102747417 A CN 102747417A CN 2012102588767 A CN2012102588767 A CN 2012102588767A CN 201210258876 A CN201210258876 A CN 201210258876A CN 102747417 A CN102747417 A CN 102747417A
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Abstract
The invention relates to a method for ingotting monocrystalline silicon, which comprises the steps of closely spreading seed crystals at the bottom of a vessel, and adding a silicon material on the seed crystals. The method is characterized in that: mutually contacted lateral crystal orientations of adjacent seed crystals are different and form an included angle of between 5 and 45 degrees. In the method for ingotting the monocrystalline silicon, a certain crystal boundary is formed in the crystal growing process along the included angle between mutually contacted lateral crystal orientations of adjacent seed crystal, and the stress introduced at gaps among seed crystals can be released through the crystal boundary, generation of defects is reduced, and the crystal boundary can inhibit dislocation diffusion, the slip distance of dislocation is reduced, the defect density is reduced, and the conversion efficiency is improved.
Description
Technical field
The present invention relates to the solar energy photovoltaic material preparation field, be specifically related to a kind of method of ingot casting silicon single crystal.
Background technology
Solar energy power generating becomes the major technique that replaces traditional fossil energy, supports human kind sustainable development as a kind of renewable energy utilization mode of tool potentiality, is obtaining development at full speed over nearest 5 years.Crystal silicon solar energy battery is in occupation of the dominant position of photovoltaic industry at present.Therefore and the cost of silicon chip has accounted for the over half of battery sheet cost, reduces the silicon chip cost, improves the silicon chip quality, for the development of photovoltaic industry extremely important meaning is arranged.
Ingot casting silicon single crystal is the technology that a kind of mode through ingot casting forms silicon single crystal.The power consumption of ingot casting silicon single crystal Duo 5% than common polysilicon, the quality of the silicon single crystal of production is near pulling of silicon single crystal.Under the prerequisite of not obvious increase silicon chip cost, make battery efficiency improve more than 1%.But because the ingot casting monocrystalline is to cast with the amalgamation of polylith certain size single crystal seed to form together, so seed crystal seam place can produce a large amount of defectives, these defectives can constantly spread along with long brilliant carrying out.These drawbacks limit the electricity conversion and the work-ing life of battery.So, reduce generation of defects, the propagation of restriction defective, the quality that improves silicon chip becomes urgent task of ingot casting monocrystalline present stage with reducing cost.
Summary of the invention
Based on this, be necessary to provide a kind of method of ingot casting silicon single crystal, can reduce ingot casting monocrystalline subsurface defect density, the propagation of restriction defective, the efficiency of conversion of the battery sheet that raising is processed.
A kind of method of ingot casting silicon single crystal; Be included in the step that container bottom is closely laid seed crystal with arranging and on seed crystal, added the silicon material, wherein, in the seed crystal of laying; The crystal orientation, side that adjacent seed crystal is in contact with one another is different, and the crystal orientation, side that seed crystal is in contact with one another forms the angle of 5 ~ 45 degree.
Preferably, said seed crystal vertical direction crystal orientation is consistent.
Preferably, the crystal orientation of said seed crystal vertical direction is < 100 >.
Preferably, use two kinds to have the not seed crystal in ipsilateral crystal orientation at least, they are consistent in the crystal orientation of vertical direction.
Preferably, said seed crystal is staggered.
In the method for above-mentioned ingot casting silicon single crystal, wherein when container bottom was laid seed crystal, the crystal orientation, side that adjacent seed crystal is in contact with one another was different; The crystal orientation, side that seed crystal is in contact with one another forms the angle of 5 ~ 45 degree, in crystal growing process, forms certain crystal boundary along this, can discharge because the stress that the seed crystal seam crossing is introduced through this crystal boundary; Reduce generation of defects, crystal boundary can suppress the dislocation diffusion simultaneously, reduces the skidding distance of dislocation; Reduce defect concentration, improve efficiency of conversion.
Description of drawings
Fig. 1 puts synoptic diagram for seed crystal among each embodiment;
Fig. 2 is the PL figure of traditional square rod;
Fig. 3 is the PL figure of the square rod of embodiment 1;
Fig. 4 is the PL figure of traditional silicon chip;
Fig. 5 is the PL figure of the silicon chip of embodiment 1;
Fig. 6 is the PL figure of the square rod of embodiment 2;
Fig. 7 is the PL figure of the silicon chip of embodiment 2.
Embodiment
The method of the ingot casting silicon single crystal of following examples is employed in the mode that seed crystal is laid in silicon material below, and its design is, when laying seed crystal in container (crucible) bottom; The crystal orientation, side that adjacent seed crystal is in contact with one another is different, and the crystal orientation, side that seed crystal is in contact with one another forms the angle of 5 ~ 45 degree, in crystal growing process, forms certain crystal boundary along this; Can discharge because the stress that the seed crystal seam crossing is introduced through this crystal boundary; Reduce generation of defects, crystal boundary can suppress the dislocation diffusion simultaneously, reduces the skidding distance of dislocation; Reduce defect concentration, improve efficiency of conversion.
Explain below in conjunction with specific embodiment how above-mentioned design realizes.
Embodiment 1
As shown in Figure 1, choose two kinds of 156 * 156 seed crystals with ipsilateral crystal orientation not and vertical direction crystal orientation for < 100 >, 5. 13 in number seed crystal wherein, 6. number seed crystal is 12.In crucible bottom these two kinds of seed crystals are alternately put, the angle that the crystal orientation, side that two seed crystalline phase mutual connections touch forms is 5 °.The normal silicon material of in crucible, packing into then.Through behind the ingot casting evolution, little square rod of silicon ingot and silicon chip are carried out photoluminescence, and (result such as Fig. 2 are extremely shown in Figure 5 for Photoluminescence, PL) test.Wherein Fig. 2 is the PL picture of traditional little square rod (a kind of seed crystal), and Fig. 3 is the PL picture of the little square rod of embodiment 1, from Fig. 3, can obviously see crystal boundary, and can find that the cryptocrystal defective obviously is less than the traditional little square rod among Fig. 2.Fig. 4 is the PL photo of traditional seed crystal casting single crystal silicon chip, and as can be seen from the figure place, seed crystal slit can produce a large amount of cryptocrystals; Fig. 5 has shown the PL photo of the casting single crystal silicon chip of embodiment 1, and as can be seen from the figure the casting single crystal silicon chip does not have cryptocrystal and produces at the crystal boundary place, and cryptocrystal fails to pass crystal boundary, and this explanation crystal boundary can reduce cryptocrystalline generation, and limits cryptocrystalline propagation.After silicon chip processed the battery sheet, testing efficiency found that the normal casting monocrystalline silicon of the efficiency of conversion of the battery sheet that the silicon chip of embodiment 1 is processed has improved 0.5 percentage point.
Embodiment 2
Choose two kinds of 125 * 125 seed crystals with ipsilateral crystal orientation not and vertical direction crystal orientation for < 100 >, the angle that the crystal orientation, side that two seed crystalline phase mutual connections touch forms is 45 °.In crucible bottom these two kinds of seed crystals are alternately put (as shown in Figure 1), the normal silicon material of in crucible, packing into then.Fig. 6 is the PL picture of the little square rod of embodiment 2, from Fig. 6, can obviously see crystal boundary, and can find that the cryptocrystal defective obviously is less than the traditional little square rod among Fig. 2.Fig. 7 has shown the PL photo of the casting single crystal silicon chip of embodiment 2, and as can be seen from the figure the casting single crystal silicon chip does not have cryptocrystal and produces at the crystal boundary place, and cryptocrystal fails to pass crystal boundary, and this explanation crystal boundary can reduce cryptocrystalline generation, and limits cryptocrystalline propagation.After the section of ingot casting evolution, silicon chip processed the battery sheet after, testing efficiency finds that the normal casting monocrystalline silicon of the efficiency of conversion of the battery sheet that silicon chip is processed among the embodiment 2 has improved 0.7 percentage point.
Can use the different seed crystal in crystal orientation, two or more side, be staggered, as long as guarantee crystal orientation, the side difference that seed crystal is in contact with one another, the angle that the crystal orientation, side that seed crystal is in contact with one another forms 5 ~ 45 degree gets final product.
In the ingot casting silicon single crystal method of above embodiment, when laying seed crystal, the crystal orientation, side that seed crystal is in contact with one another forms the angle of 5 ~ 45 degree; In crystal growing process, form certain crystal boundary, can discharge because the stress that the seed crystal seam crossing is introduced reduces generation of defects through this crystal boundary along this; Crystal boundary can suppress the dislocation diffusion simultaneously; Reduce the skidding distance of dislocation, reduce defect concentration, improve efficiency of conversion.In addition, aforesaid method does not have influence to the crystal orientation of silicon chip surface, can bring into play the advantage of alkali making herbs into wool, can make accurate monocrystalline efficiency of conversion improve 0.5% ~ 0.7%.
The above embodiment has only expressed several kinds of embodiments of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the present invention's design, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with accompanying claims.
Claims (5)
1. the method for an ingot casting silicon single crystal; Be included in the step that container bottom is closely laid seed crystal with arranging and on seed crystal, added the silicon material, it is characterized in that, in the seed crystal of laying; The crystal orientation, side that adjacent seed crystal is in contact with one another is different, and the crystal orientation, side that seed crystal is in contact with one another forms the angle of 5 ~ 45 degree.
2. the method for ingot casting silicon single crystal according to claim 1 is characterized in that, said seed crystal vertical direction crystal orientation is consistent.
3. the method for ingot casting silicon single crystal according to claim 1 and 2 is characterized in that, the crystal orientation of said seed crystal vertical direction is < 100 >.
4. the method for ingot casting silicon single crystal according to claim 1 is characterized in that, uses two kinds to have the not seed crystal in ipsilateral crystal orientation at least, and they are consistent in the crystal orientation of vertical direction.
5. the method for ingot casting silicon single crystal according to claim 4 is characterized in that, said seed crystal is staggered.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103255471A (en) * | 2013-05-14 | 2013-08-21 | 江苏协鑫硅材料科技发展有限公司 | Crystalline silicon and preparation method thereof |
| WO2014191900A1 (en) * | 2013-05-27 | 2014-12-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for producing a silicon ingot provided with symmetrical grain boundaries |
| CN104818521A (en) * | 2015-04-15 | 2015-08-05 | 南通大学 | Seed crystal splicing structure for like single crystal silicon cast ingot |
| CN104831343A (en) * | 2015-04-15 | 2015-08-12 | 南通大学 | Seed crystal splicing structure for ingot casting |
| CN107268069A (en) * | 2016-08-04 | 2017-10-20 | 中美矽晶制品股份有限公司 | Method for laying seed crystal and method for producing pseudo-single crystal ingot |
| CN109097827A (en) * | 2018-07-13 | 2018-12-28 | 浙江大学 | A kind of twin crystal is to polycrystalline silicon ingot casting and preparation method thereof |
| CN109989104A (en) * | 2019-01-25 | 2019-07-09 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of preparation method of casting single crystal silicon ingot, monocrystal silicon |
| CN111441083A (en) * | 2020-03-25 | 2020-07-24 | 南昌大学 | Seed crystal laying method in production of low dislocation density casting single crystal ingot or polycrystalline silicon ingot |
| CN111748841A (en) * | 2019-03-26 | 2020-10-09 | 赛维Ldk太阳能高科技(新余)有限公司 | Seed crystal laying method for casting monocrystalline silicon and application |
| CN111893556A (en) * | 2020-06-30 | 2020-11-06 | 江苏协鑫硅材料科技发展有限公司 | Seed crystal laying method for casting single crystal, casting single crystal silicon ingot and preparation method thereof |
| CN112126972A (en) * | 2020-08-26 | 2020-12-25 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal laying method, production method of ingot casting monocrystalline silicon and ingot casting monocrystalline silicon |
| CN112144103A (en) * | 2020-09-27 | 2020-12-29 | 宜昌南玻硅材料有限公司 | Preparation method of cast single crystal seed crystal |
| CN113026100A (en) * | 2019-12-24 | 2021-06-25 | 阿特斯阳光电力集团股份有限公司 | Single-crystal-like silicon ingot and preparation method and application thereof |
| CN113122913A (en) * | 2020-01-10 | 2021-07-16 | 赛维Ldk太阳能高科技(新余)有限公司 | Seed crystal laying method, monocrystalline silicon ingot casting method and monocrystalline silicon wafer |
| CN113564689A (en) * | 2020-04-29 | 2021-10-29 | 江西赛维Ldk太阳能高科技有限公司 | Method for recycling seed crystals for casting monocrystals |
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| CN102168303A (en) * | 2011-03-29 | 2011-08-31 | 浙江晨方光电科技有限公司 | Method for preparing crystallization rate of monocrystal silicon 110 |
| CN102534772A (en) * | 2012-02-28 | 2012-07-04 | 江苏协鑫硅材料科技发展有限公司 | Method for growing large-grain cast polycrystalline silicon |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103255471A (en) * | 2013-05-14 | 2013-08-21 | 江苏协鑫硅材料科技发展有限公司 | Crystalline silicon and preparation method thereof |
| CN103255471B (en) * | 2013-05-14 | 2015-12-23 | 江苏协鑫硅材料科技发展有限公司 | Crystalline silicon and preparation method thereof |
| WO2014191900A1 (en) * | 2013-05-27 | 2014-12-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for producing a silicon ingot provided with symmetrical grain boundaries |
| US10131999B2 (en) | 2013-05-27 | 2018-11-20 | Commissariat À L'energle Atomique Et Aux Energies Alternatives | Method for producing a silicon ingot having symmetrical grain boundaries |
| CN104818521A (en) * | 2015-04-15 | 2015-08-05 | 南通大学 | Seed crystal splicing structure for like single crystal silicon cast ingot |
| CN104831343A (en) * | 2015-04-15 | 2015-08-12 | 南通大学 | Seed crystal splicing structure for ingot casting |
| CN107268069A (en) * | 2016-08-04 | 2017-10-20 | 中美矽晶制品股份有限公司 | Method for laying seed crystal and method for producing pseudo-single crystal ingot |
| CN109097827A (en) * | 2018-07-13 | 2018-12-28 | 浙江大学 | A kind of twin crystal is to polycrystalline silicon ingot casting and preparation method thereof |
| CN109989104A (en) * | 2019-01-25 | 2019-07-09 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of preparation method of casting single crystal silicon ingot, monocrystal silicon |
| CN111748841A (en) * | 2019-03-26 | 2020-10-09 | 赛维Ldk太阳能高科技(新余)有限公司 | Seed crystal laying method for casting monocrystalline silicon and application |
| CN111748841B (en) * | 2019-03-26 | 2021-08-20 | 赛维Ldk太阳能高科技(新余)有限公司 | Seed crystal laying method for casting monocrystalline silicon and application |
| CN113026100A (en) * | 2019-12-24 | 2021-06-25 | 阿特斯阳光电力集团股份有限公司 | Single-crystal-like silicon ingot and preparation method and application thereof |
| CN113122913A (en) * | 2020-01-10 | 2021-07-16 | 赛维Ldk太阳能高科技(新余)有限公司 | Seed crystal laying method, monocrystalline silicon ingot casting method and monocrystalline silicon wafer |
| CN113122913B (en) * | 2020-01-10 | 2022-08-23 | 新余赛维铸晶技术有限公司 | Seed crystal laying method, monocrystalline silicon ingot casting method and monocrystalline silicon wafer |
| CN111441083A (en) * | 2020-03-25 | 2020-07-24 | 南昌大学 | Seed crystal laying method in production of low dislocation density casting single crystal ingot or polycrystalline silicon ingot |
| CN111441083B (en) * | 2020-03-25 | 2021-08-06 | 南昌大学 | Seed crystal laying method in production of low dislocation density casting single crystal ingot or polycrystalline silicon ingot |
| CN113564689A (en) * | 2020-04-29 | 2021-10-29 | 江西赛维Ldk太阳能高科技有限公司 | Method for recycling seed crystals for casting monocrystals |
| CN111893556A (en) * | 2020-06-30 | 2020-11-06 | 江苏协鑫硅材料科技发展有限公司 | Seed crystal laying method for casting single crystal, casting single crystal silicon ingot and preparation method thereof |
| CN112126972A (en) * | 2020-08-26 | 2020-12-25 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal laying method, production method of ingot casting monocrystalline silicon and ingot casting monocrystalline silicon |
| CN112144103A (en) * | 2020-09-27 | 2020-12-29 | 宜昌南玻硅材料有限公司 | Preparation method of cast single crystal seed crystal |
| CN112144103B (en) * | 2020-09-27 | 2022-08-16 | 宜昌南玻硅材料有限公司 | Preparation method of cast single crystal seed crystal |
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Application publication date: 20121024 |