CN103014852A - Casting method of efficient polycrystalline silicon ingot - Google Patents
Casting method of efficient polycrystalline silicon ingot Download PDFInfo
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- CN103014852A CN103014852A CN2013100086629A CN201310008662A CN103014852A CN 103014852 A CN103014852 A CN 103014852A CN 2013100086629 A CN2013100086629 A CN 2013100086629A CN 201310008662 A CN201310008662 A CN 201310008662A CN 103014852 A CN103014852 A CN 103014852A
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Abstract
The invention discloses a casting method of an efficient polycrystalline silicon ingot. The efficient polycrystalline silicon ingot is prepared from silica powder with the purity being over 99.9% and the particle size being 0.01-100 microns as the raw material. The casting method comprises the following steps of: uniformly stirring and mixing the silica powder with pure water, wherein the pure water accounts for 20% to 70% of the mixture, and the mixture is taken as a polycrystalline cast ingot nucleating agent; after the spraying of silicon nitride to a crucible is finished, spraying or brushing the mixture to the bottom of the crucible to form a silica powder coating as thick as 0.3mm to 5mm; drying the coating to obtain a cracked silica powder coating and/or a non-cracked silica powder coating; and loading and casting the ingot, wherein during crystal growth, the cracked silica powder coating takes silica powder and cracks as nucleating points for casting ingot growth, and the non-cracked silica powder coating takes silica powder as nucleating points for casting ingot growth, thereby obtaining the polycrystalline silicon ingot. When the polycrystalline silicon ingot produced by the casting method is cut into silicon slices, the defect density of the silicon slices is low; and when the silicon slices are used for making cells, the conversion efficiency of the silicon slices is higher than that of common polycrystalline silicon slices by 0.3% to 1%.The cost of the casting method is equal to that of a main ingot casting method, and the rate of finished products of the casting method exceeds 69%.
Description
Technical field
The present invention relates to a kind of castmethod of polycrystal silicon ingot, particularly a kind of method be used to casting efficient polycrystal silicon ingot.
Background technology
The castmethod of polycrystal silicon ingot of the prior art mainly contains:
1. class single crystal technology: in order to improve the quality of polycrystal silicon ingot, ingot casting producer has developed the class single crystal technology.The open source information demonstration, the class single crystal technology was succeeded in developing by BPSolar in 2006, and the producers such as domestic brilliant Australia, LDK, Han Hua new forms of energy, phoenix photovoltaic issue its class monocrystalline progress in succession subsequently.This technology adopts the thick monocrystalline of 10mm～20mm as seed crystal, monocrystalline is placed the quartz crucible bottom of having sprayed silicon nitride coating, then refills the silicon material.By the adjusting process parameter, solid-liquid interface and made monocrystalline melt a part at the single crystal seed place when control material finished during material, and a part of monocrystalline that residue is not melted is as seed crystal, began forming core from seed crystal long brilliant, obtained at last the class silicon single crystal ingot.
There is following defective in the class single crystal technology: 1. the single crystal seed cost is high; Therefore 2. the dislocation desity of position, class silicon single crystal ingot upper middle is very high, and its dislocation desity even also higher than the dislocation desity in the common silicon ingot adopts in the cell piece that the class monocrystalline silicon piece works it out, and the poor efficiency ratio has surpassed 10%.Because cost is high, the poor efficiency ratio is high, and this technology does not also have large-scale application at present.
2, broken silicon wafers technology: number of patent application is 201210291256.3 Chinese publication document, announced a kind of method of coming the casting polycrystalline silicon ingot with broken silicon wafers as seed crystal, the method adopts in the quartz crucible bottom that has sprayed silicon nitride coating and lays in advance certain thickness broken silicon wafers, then normally charging.By the adjusting process parameter, solid-liquid interface and made broken silicon wafers melt a part at the broken silicon wafers place when control material finished during material, and the broken silicon wafers that residue is not melted is as seed crystal, began forming core from seed crystal long brilliant, obtained at last the high quality silicon ingot.
Adopt broken silicon wafers as seed crystal, because metallic impurity diffusion in the crucible can cause adopting this technology to cast out in the next silicon ingot, the bottom red sector is partially long, and yield rate is on the low side, and its yield rate is low, generally about 63%.
Summary of the invention
Technical problem to be solved by this invention is for the deficiencies in the prior art, and the method for the raising casting polycrystalline silicon ingot quality that a kind of silicon ingot defective is few, dislocation desity is low, yield rate is high is provided.
Technical problem to be solved by this invention is to realize by following technical scheme.The present invention is a kind of method be used to casting efficient polycrystal silicon ingot, is characterized in, its step is as follows:
(1) adopting the silica flour that purity surpasses 99.9%, particle diameter is 0.01 μ m～100 μ m is raw material; Silica flour and pure water are mixed, and the mass percent that pure water accounts for mixture is 20%～70%;
(2) with the mixture of above-mentioned silica flour and pure water as the polycrystalline cast ingot nucleating agent; After crucible carries out the silicon nitride spray finishing end, with mixture spray or brush that to form a layer thickness to crucible bottom be the silica flour coating of 0.3～5mm, after the silica flour coating drying, obtain the silica flour coating of be full of cracks and the silica flour coating that does not chap, the ingot casting of feeding at last, as the forming core point, the silica flour coating that does not chap is carried out the ingot casting growth with silica flour as the forming core point to be full of cracks silica flour coating, the acquisition polycrystal silicon ingot with silica flour and crack when long brilliant.
The step of the method for casting efficient polycrystal silicon ingot of the present invention (1), silica flour and pure water, additive can also be mixed, the mass percent that pure water accounts for mixture is 20%～70%, and additive accounts for the mass percent 0.1%～10% of mixture; Described additive is selected from one or more in silicon sol, silicic acid, polyvinyl alcohol, the silicon nitride.Can further improve the silica flour coating quality like this.
Compared with prior art, after the polycrystal silicon ingot that the inventive method is produced was cut into silicon chip, Defect density was low, make battery after, efficiency of conversion is higher by 0.3～1.0% than the efficient of common polysilicon chip.Adopt the inventive method ingot casting, cost is suitable with the main flow casting ingot method, but dislocation desity can reduce greatly, and the silicon ingot defective is few, and yield rate can surpass 69%, and cost is significantly less than the cost of broken silicon wafers technology.
Embodiment
Below further describe concrete technical scheme of the present invention, so that those skilled in the art understands the present invention further, and do not consist of its Copyright law.
Embodiment 1, a kind of method be used to casting efficient polycrystal silicon ingot, and its step is as follows:
(1) adopting the silica flour that purity surpasses 99.9%, particle diameter is 0.01 μ m is raw material; Silica flour and pure water are mixed, and the mass percent that pure water accounts for mixture is 20%;
(2) with the mixture of above-mentioned silica flour and pure water as the polycrystalline cast ingot nucleating agent; After crucible carries out the silicon nitride spray finishing end, with mixture spray or brush that to form a layer thickness to crucible bottom be the silica flour coating of 0.3mm, after the silica flour coating drying, obtain the silica flour coating of be full of cracks and the silica flour coating that does not chap, the ingot casting of feeding at last, as the forming core point, the silica flour coating that does not chap is carried out the ingot casting growth with silica flour as the forming core point to be full of cracks silica flour coating, the acquisition polycrystal silicon ingot with silica flour and crack when long brilliant.
Embodiment 2, a kind of method be used to casting efficient polycrystal silicon ingot, and its step is as follows:
(1) adopting the silica flour that purity surpasses 99.9%, particle diameter is 100 μ m is raw material; Silica flour and pure water are mixed, and the mass percent that pure water accounts for mixture is 70%;
(2) with the mixture of above-mentioned silica flour and pure water as the polycrystalline cast ingot nucleating agent; After crucible carries out the silicon nitride spray finishing end, with mixture spray or brush that to form a layer thickness to crucible bottom be the silica flour coating of 5mm, after the silica flour coating drying, obtain the silica flour coating of be full of cracks and the silica flour coating that does not chap, the ingot casting of feeding at last, as the forming core point, the silica flour coating that does not chap is carried out the ingot casting growth with silica flour as the forming core point to be full of cracks silica flour coating, the acquisition polycrystal silicon ingot with silica flour and crack when long brilliant.
Embodiment 3, a kind of method be used to casting efficient polycrystal silicon ingot, and its step is as follows:
(1) adopting the silica flour that purity surpasses 99.9%, particle diameter is 1 μ m is raw material; Silica flour and pure water are mixed, and the mass percent that pure water accounts for mixture is 50%;
(2) with the mixture of above-mentioned silica flour and pure water as the polycrystalline cast ingot nucleating agent; After crucible carries out the silicon nitride spray finishing end, with mixture spray or brush that to form a layer thickness to crucible bottom be the silica flour coating of 2mm, after the silica flour coating drying, obtain the silica flour coating of be full of cracks and the silica flour coating that does not chap, the ingot casting of feeding at last, as the forming core point, the silica flour coating that does not chap is carried out the ingot casting growth with silica flour as the forming core point to be full of cracks silica flour coating, the acquisition polycrystal silicon ingot with silica flour and crack when long brilliant.
Embodiment 4, a kind of method be used to casting efficient polycrystal silicon ingot, and its step is as follows:
(1) adopting the silica flour that purity surpasses 99.9%, particle diameter is 10 μ m is raw material; Silica flour and pure water are mixed, and the mass percent that pure water accounts for mixture is 30%;
(2) with the mixture of above-mentioned silica flour and pure water as the polycrystalline cast ingot nucleating agent; After crucible carries out the silicon nitride spray finishing end, with mixture spray or brush that to form a layer thickness to crucible bottom be the silica flour coating of 1mm, after the silica flour coating drying, obtain the silica flour coating of be full of cracks and the silica flour coating that does not chap, the ingot casting of feeding at last, as the forming core point, the silica flour coating that does not chap is carried out the ingot casting growth with silica flour as the forming core point to be full of cracks silica flour coating, the acquisition polycrystal silicon ingot with silica flour and crack when long brilliant.
Embodiment 5, a kind of method be used to casting efficient polycrystal silicon ingot, and its step is as follows:
(1) adopting the silica flour that purity surpasses 99.9%, particle diameter is 20 μ m is raw material; Silica flour and pure water, additive are mixed, and the mass percent that pure water accounts for mixture is 35%, and additive accounts for the mass percent 5% of mixture; Described additive is selected from one or more in silicon sol, silicic acid, polyvinyl alcohol, the silicon nitride.
(2) with the mixture of above-mentioned silica flour and pure water as the polycrystalline cast ingot nucleating agent; After crucible carries out the silicon nitride spray finishing end, with mixture spray or brush that to form a layer thickness to crucible bottom be the silica flour coating of 3mm, after the silica flour coating drying, obtain the silica flour coating of be full of cracks and the silica flour coating that does not chap, the ingot casting of feeding at last, as the forming core point, the silica flour coating that does not chap is carried out the ingot casting growth with silica flour as the forming core point to be full of cracks silica flour coating, the acquisition polycrystal silicon ingot with silica flour and crack when long brilliant.
Embodiment 6, a kind of method be used to casting efficient polycrystal silicon ingot, and its step is as follows:
(1) adopting the silica flour that purity surpasses 99.9%, particle diameter is 10 μ m is raw material; Silica flour and pure water, additive are mixed, and the mass percent that pure water accounts for mixture is 55%, and additive accounts for the mass percent 1% of mixture; Described additive is selected from one or more in silicon sol, silicic acid, polyvinyl alcohol, the silicon nitride.
(2) with the mixture of above-mentioned silica flour and pure water as the polycrystalline cast ingot nucleating agent; After crucible carries out the silicon nitride spray finishing end, with mixture spray or brush that to form a layer thickness to crucible bottom be the silica flour coating of 2mm, after the silica flour coating drying, obtain the silica flour coating of be full of cracks and the silica flour coating that does not chap, the ingot casting of feeding at last, as the forming core point, the silica flour coating that does not chap is carried out the ingot casting growth with silica flour as the forming core point to be full of cracks silica flour coating, the acquisition polycrystal silicon ingot with silica flour and crack when long brilliant.
Embodiment 7, a kind of method be used to casting efficient polycrystal silicon ingot, and its step is as follows:
(1) adopting the silica flour that purity surpasses 99.9%, particle diameter is 0.05 μ m is raw material; Silica flour and pure water, additive are mixed, and the mass percent that pure water accounts for mixture is 25%, and additive accounts for the mass percent 0.1% of mixture; Described additive is selected from one or more in silicon sol, silicic acid, polyvinyl alcohol, the silicon nitride.
(2) with the mixture of above-mentioned silica flour and pure water as the polycrystalline cast ingot nucleating agent; After crucible carries out the silicon nitride spray finishing end, with mixture spray or brush that to form a layer thickness to crucible bottom be the silica flour coating of 0.8mm, after the silica flour coating drying, obtain the silica flour coating of be full of cracks and the silica flour coating that does not chap, the ingot casting of feeding at last, as the forming core point, the silica flour coating that does not chap is carried out the ingot casting growth with silica flour as the forming core point to be full of cracks silica flour coating, the acquisition polycrystal silicon ingot with silica flour and crack when long brilliant.
Embodiment 8, a kind of method be used to casting efficient polycrystal silicon ingot, and its step is as follows:
(1) adopting the silica flour that purity surpasses 99.9%, particle diameter is 50 μ m is raw material; Silica flour and pure water, additive are mixed, and the mass percent that pure water accounts for mixture is 60%, and additive accounts for the mass percent 10% of mixture; Described additive is selected from one or more in silicon sol, silicic acid, polyvinyl alcohol, the silicon nitride.
(2) with the mixture of above-mentioned silica flour and pure water as the polycrystalline cast ingot nucleating agent; After crucible carries out the silicon nitride spray finishing end, with mixture spray or brush that to form a layer thickness to crucible bottom be the silica flour coating of 1mm, after the silica flour coating drying, obtain the silica flour coating of be full of cracks and the silica flour coating that does not chap, the ingot casting of feeding at last, as the forming core point, the silica flour coating that does not chap is carried out the ingot casting growth with silica flour as the forming core point to be full of cracks silica flour coating, the acquisition polycrystal silicon ingot with silica flour and crack when long brilliant.
Claims (2)
1. one kind is used for the method cast efficient polycrystal silicon ingot, it is characterized in that, its step is as follows:
(1) adopting the silica flour that purity surpasses 99.9%, particle diameter is 0.01 μ m～100 μ m is raw material; Silica flour and pure water are mixed, and the mass percent that pure water accounts for mixture is 20%～70%;
(2) with the mixture of above-mentioned silica flour and pure water as the polycrystalline cast ingot nucleating agent; After crucible carries out the silicon nitride spray finishing end, with mixture spray or brush that to form a layer thickness to crucible bottom be the silica flour coating of 0.3～5mm, after the silica flour coating drying, obtain the silica flour coating of be full of cracks and the silica flour coating that does not chap, the ingot casting of feeding at last, as the forming core point, the silica flour coating that does not chap is carried out the ingot casting growth with silica flour as the forming core point to be full of cracks silica flour coating, the acquisition polycrystal silicon ingot with silica flour and crack when long brilliant.
2. method according to claim 1, it is characterized in that: in step (1), silica flour and pure water, additive are mixed, the mass percent that pure water accounts for mixture is 20%～70%, and additive accounts for the mass percent 0.1%～10% of mixture; Described additive is selected from one or more in silicon sol, silicic acid, polyvinyl alcohol, the silicon nitride.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103320854A (en) * | 2013-06-07 | 2013-09-25 | 英利集团有限公司 | Coating structure for crucible, preparation method thereof, and crucible with coating structure |
| CN103343388A (en) * | 2013-07-18 | 2013-10-09 | 阿特斯(中国)投资有限公司 | Preparation method for polycrystalline silicon cast ingot |
| CN103361722A (en) * | 2013-07-23 | 2013-10-23 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingots and preparation method thereof, polycrystalline silicon chips and polycrystalline silicon ingot casting crucible |
| CN103382572A (en) * | 2013-07-26 | 2013-11-06 | 青岛隆盛晶硅科技有限公司 | Crucible for enabling polycrystalline silicon ingot to be free of black edge and preparation method thereof |
| CN103436959A (en) * | 2013-08-13 | 2013-12-11 | 天津英利新能源有限公司 | Polycrystalline silicon ingot preparation method |
| CN103882517A (en) * | 2014-04-04 | 2014-06-25 | 阿特斯(中国)投资有限公司 | Preparation method of polycrystalline silicon ingot |
| CN104018218A (en) * | 2014-05-23 | 2014-09-03 | 奥特斯维能源（太仓）有限公司 | Ingot casting method for increasing transformation rate of polysilicon cell |
| CN104195632A (en) * | 2014-09-04 | 2014-12-10 | 奥特斯维能源（太仓）有限公司 | Method for casting high efficiency polycrystalline silicon ingots |
| CN104342752A (en) * | 2013-07-29 | 2015-02-11 | 晶科能源有限公司 | Method for ingoting polycrystalline silicon |
| CN104532344A (en) * | 2014-12-09 | 2015-04-22 | 烟台同立高科新材料股份有限公司 | Preparation method of efficient silicon nitride powder for polycrystalline silicon ingots |
| CN104630885A (en) * | 2015-03-17 | 2015-05-20 | 重庆大全新能源有限公司 | Method for producing polysilicon ingots |
| CN104711673A (en) * | 2015-03-13 | 2015-06-17 | 湖南红太阳光电科技有限公司 | Preparation method of polycrystalline silicon ingot |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103320854A (en) * | 2013-06-07 | 2013-09-25 | 英利集团有限公司 | Coating structure for crucible, preparation method thereof, and crucible with coating structure |
| CN103320854B (en) * | 2013-06-07 | 2016-03-02 | 英利集团有限公司 | Crucible coating structure, its preparation method and comprise its crucible |
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| CN103361722B (en) * | 2013-07-23 | 2016-03-02 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystal silicon ingot and preparation method thereof, polysilicon chip and crucible used for polycrystalline silicon ingot casting |
| CN103361722A (en) * | 2013-07-23 | 2013-10-23 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline silicon ingots and preparation method thereof, polycrystalline silicon chips and polycrystalline silicon ingot casting crucible |
| CN103382572A (en) * | 2013-07-26 | 2013-11-06 | 青岛隆盛晶硅科技有限公司 | Crucible for enabling polycrystalline silicon ingot to be free of black edge and preparation method thereof |
| CN104342752A (en) * | 2013-07-29 | 2015-02-11 | 晶科能源有限公司 | Method for ingoting polycrystalline silicon |
| CN103436959A (en) * | 2013-08-13 | 2013-12-11 | 天津英利新能源有限公司 | Polycrystalline silicon ingot preparation method |
| CN103882517A (en) * | 2014-04-04 | 2014-06-25 | 阿特斯(中国)投资有限公司 | Preparation method of polycrystalline silicon ingot |
| CN104018218A (en) * | 2014-05-23 | 2014-09-03 | 奥特斯维能源（太仓）有限公司 | Ingot casting method for increasing transformation rate of polysilicon cell |
| CN104195632A (en) * | 2014-09-04 | 2014-12-10 | 奥特斯维能源（太仓）有限公司 | Method for casting high efficiency polycrystalline silicon ingots |
| CN104532344A (en) * | 2014-12-09 | 2015-04-22 | 烟台同立高科新材料股份有限公司 | Preparation method of efficient silicon nitride powder for polycrystalline silicon ingots |
| CN104711673A (en) * | 2015-03-13 | 2015-06-17 | 湖南红太阳光电科技有限公司 | Preparation method of polycrystalline silicon ingot |
| CN104630885A (en) * | 2015-03-17 | 2015-05-20 | 重庆大全新能源有限公司 | Method for producing polysilicon ingots |
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